Unveiling the nature of atomic defects in graphene on a metal surface

• Karl Rothe,
• Nicolas Néel and
• Jörg Kröger

Beilstein J. Nanotechnol. 2024, 15, 416–425, doi:10.3762/bjnano.15.37

• ], hybridization of the graphene defect with the metal possibly induces electron transfer into graphene giving rise to local n-doping and the Dirac cone below EF. In addition, the distortion of the graphene lattice that accompanies the increased hybridization with the surface may explain the dim rim of the vacancy

Determining by Raman spectroscopy the average thickness and N-layer-specific surface coverages of MoS₂ thin films with domains much smaller than the laser spot size

• Felipe Wasem Klein,
• Jean-Roch Huntzinger,
• Vincent Astié,
• Damien Voiry,
• Romain Parret,
• Houssine Makhlouf,
• Sandrine Juillaguet,
• Jean-Manuel Decams,
• Sylvie Contreras,
• Périne Landois,
• Ahmed-Azmi Zahab,
• Jean-Louis Sauvajol and
• Matthieu Paillet

Beilstein J. Nanotechnol. 2024, 15, 279–296, doi:10.3762/bjnano.15.26

Recent advances in green carbon dots (2015–2022): synthesis, metal ion sensing, and biological applications

• Aisha Kanwal,
• Naheed Bibi,
• Sajjad Hyder,
• Arif Muhammad,
• Hao Ren,
• Jiangtao Liu and
• Zhongli Lei

Beilstein J. Nanotechnol. 2022, 13, 1068–1107, doi:10.3762/bjnano.13.93

• equipment because of its superior antibacterial, light-admitting, and flexible features [28]. In another report, CDs were prepared from egg white using a one-step hydrothermal method. Carbonization, N-doping, and surface functionalization all occurred simultaneously during the hydrothermal reaction. The CDs

Nanoarchitectonics of the cathode to improve the reversibility of Li–O₂ batteries

• Hien Thi Thu Pham,
• Jonghyeok Yun,
• So Yeun Kim,
• Sang A Han,
• Jung Ho Kim,
• Jong-Won Lee and
• Min-Sik Park

Beilstein J. Nanotechnol. 2022, 13, 689–698, doi:10.3762/bjnano.13.61

• inferred that the crystallinity and N content in the ZnxCoy–C particles can be increased by decreasing the Zn/Co ratio, since the metallic Co facilitates graphitization and N doping at a given temperature. Figure 5a shows the electrical conductivities of ZnxCoy–C/CNT composites, indicating that the Zn1Co4

Effect of localized helium ion irradiation on the performance of synthetic monolayer MoS₂ field-effect transistors

• Jakub Jadwiszczak,
• Pierce Maguire,
• Conor P. Cullen,
• Georg S. Duesberg and
• Hongzhou Zhang

Beilstein J. Nanotechnol. 2020, 11, 1329–1335, doi:10.3762/bjnano.11.117

• cm−2 [13][14][15][16][17], as well as good electrical conductivity for up to approx. 1018 ions cm−2 [9][10][18]. Sulfur vacancies (SVs) and the formation of a dislocation–divacancy complex can lead to significant n-doping in MoS2 [19], which shifts the threshold voltage (Vth) of the FET to higher

• sites for atmospheric p-dopants (or adventitious hydrocarbons) within the area defined by the spread of the Gaussian probe extension. The probe has spatially trailing lower-dose tails, the damage of which extends to more than 10 nm and may induce additional n-doping with no complementary adsorbant

• saturation, i.e., by creating unsaturated SVs in the bottom sulfuric layer [34][39]. A larger irradiation area will thus provide more effective p-doping sites while stifling the n-doping response as the probe tails begin to extend past the FET channel. In addition, low-dose trail areas will be irradiated

Soybean-derived blue photoluminescent carbon dots

• Shanshan Wang,
• Wei Sun,
• Dong-sheng Yang and
• Fuqian Yang

Beilstein J. Nanotechnol. 2020, 11, 606–619, doi:10.3762/bjnano.11.48

• to introduce N-surface-functional groups to carbon nanoparticles made from biomass and biowaste and to produce stable photoluminescent CDs with excellent water-wettability. Keywords: biomass; carbon dots; hydrothermal process; laser ablation; N-doping; photoluminescence; Introduction Carbon-based

Synthesis of amorphous and graphitized porous nitrogen-doped carbon spheres as oxygen reduction reaction catalysts

• Maximilian Wassner,
• Markus Eckardt,
• Andreas Reyer,
• Thomas Diemant,
• Michael S. Elsaesser,
• R. Jürgen Behm and
• Nicola Hüsing

Beilstein J. Nanotechnol. 2020, 11, 1–15, doi:10.3762/bjnano.11.1

• temperatures. The overall nitrogen content of the graphitized N-doped carbon spheres is lower than that of the amorphous carbon spheres, however, also the microporosity decreases strongly with graphitization. Comparison with the electrocatalytic behavior in the ORR shows that in addition to the N-doping, the

• precursors directly in the synthesis of the material, which leads to the direct formation of C–N bonds; and second, post-synthesis N-doping via substitutional incorporation of N into the carbon lattice of as-synthesized carbon materials with a reactive nitrogen-containing agent. Established in situ syntheses

• are chemical vapor deposition (CVD) and arc discharge methods for N-doped graphene, graphite, and carbon nanotubes [9]. Most commonly, the post-synthetic approach is carried out by thermal treatment of carbon in ammonia atmosphere, typically leading to surface N-doping. A variety of N bonding

Tuning the performance of vanadium redox flow batteries by modifying the structural defects of the carbon felt electrode

• Ditty Dixon,
• Deepu Joseph Babu,
• Aiswarya Bhaskar,
• Hans-Michael Bruns,
• Joerg J. Schneider,
• Frieder Scheiba and
• Helmut Ehrenberg

Beilstein J. Nanotechnol. 2019, 10, 1698–1706, doi:10.3762/bjnano.10.165

• )-based carbon felt was subjected to N2-plasma treatment to increase the heteroatom defects and reactive edge sites as a method to increase the performance in vanadium redox flow batteries (VRFBs). N-doping in the felt was mainly in the form of pyrrolic and pyridinic nitrogen. Even though the amount of

• and edge sites. Thus, from the present study, it can be concluded that an alternate way to increase the performance of the VRFBs is to introduce specific defects such as N-doping/substitution or to increase the edge sites. In other words, defects induced in the carbon felt such as heteroatom doping

• increase in electrical conductivity as well as active sites [16]. In this work, a carbon felt electrode with minimum oxygen functional groups and a larger amount of defects in the form of N-doping and edge sites was prepared by employing the N2 plasma technique. The N2-plasma-treated sample showed enhanced

Synthesis of P- and N-doped carbon catalysts for the oxygen reduction reaction via controlled phosphoric acid treatment of folic acid

• Rieko Kobayashi,
• Takafumi Ishii,
• Yasuo Imashiro and
• Jun-ichi Ozaki

Beilstein J. Nanotechnol. 2019, 10, 1497–1510, doi:10.3762/bjnano.10.148

• ]. Strelko et al. used theoretical methods to establish an interesting relationship between the bandgap energy of a given catalyst and its ability to promote reactions involving electron transfer [21]. Moreover, P-doping of graphitic layers was revealed to have an effect similar to that of N-doping and hence

Glucose-derived carbon materials with tailored properties as electrocatalysts for the oxygen reduction reaction

• Rafael Gomes Morais,
• Natalia Rey-Raap,
• José Luís Figueiredo and
• Manuel Fernando Ribeiro Pereira

Beilstein J. Nanotechnol. 2019, 10, 1089–1102, doi:10.3762/bjnano.10.109

• were applied to modify the textural properties, while nitrogen functionalities were incorporated via different N-doping methodologies (ball milling and conventional methods) using melamine. A direct relationship between the microporosity of the activated carbons and the limiting current density was

Impact of the anodization time on the photocatalytic activity of TiO₂ nanotubes

• Jesús A. Díaz-Real,
• Geyla C. Dubed-Bandomo,
• Juan Galindo-de-la-Rosa,
• Luis G. Arriaga,
• Janet Ledesma-García and
• Nicolas Alonso-Vante

Beilstein J. Nanotechnol. 2018, 9, 2628–2643, doi:10.3762/bjnano.9.244

• were obtained for longer ta. A linear trend for the growth rate was observed for samples with ta ≥ 1.0 h. Changes in the surface chemistry were confirmed by XPS measurements, indicating F and N doping. This was explained in terms of the exposition time during the anodization process since higher F

Electro-optical interfacial effects on a graphene/π-conjugated organic semiconductor hybrid system

• Karolline A. S. Araujo,
• Luiz A. Cury,
• Matheus J. S. Matos,
• Thales F. D. Fernandes,
• Luiz G. Cançado and
• Bernardo R. A. Neves

Beilstein J. Nanotechnol. 2018, 9, 963–974, doi:10.3762/bjnano.9.90

• of respective RA-induced p-doping of graphene and graphene-induced n-doping of RA resulting from charge transfer. The effect of illumination on the hybrid system is also portrayed in Figure 4f and Figure 5c. Both photo-assisted EFM and SKPM experiments show an increase on the surface potential of

• -documented in the literature, especially with short wavelengths, like UV light [39][40]. Such increase is associated with photo-electron generation which induces an effective n-doping of graphene, increasing its surface potential [39][40]. The effective n-doping is supposedly achieved when an electron–hole

• pair is photogenerated and liberates graphene adsorbates via hole recombination (e.g., h+ + O2− → O2 (gas)), releasing electrons that, then, contribute toward an effective n-doping [39][40]. The shorter the wavelength, the more effective such process is [39][40]. Thus, in the present case, which uses

Synthesis of graphene–transition metal oxide hybrid nanoparticles and their application in various fields

• Arpita Jana,
• Elke Scheer and
• Sebastian Polarz

Beilstein J. Nanotechnol. 2017, 8, 688–714, doi:10.3762/bjnano.8.74

• ] (Figure 6). N-doping of reduced mildly oxidised graphene oxide (rmGO) affords stronger coupling than rmGO and Co3O4 (Co3O4/N-rmGO than in Co3O4/rmGO) due to favourable nucleation and anchor sites for Co3O4 nanocrystals as N-groups help on rGO. In the ORR, the electronic effect of N-doping of graphene also

• ]. Here, the N-doping plays an important role as a supporting material to ensure good dispersion of the oxide NPs and in bringing in favourable activity to the system. They show that this hybrid material reveals an ORR activity that is closely matched with the Pt-supported carbon catalyst in an alkaline

A single-source precursor route to anisotropic halogen-doped zinc oxide particles as a promising candidate for new transparent conducting oxide materials

• Daniela Lehr,
• Markus R. Wagner,
• Johanna Flock,
• Julian S. Reparaz,
• Clivia M. Sotomayor Torres,
• Alexander Klaiber,
• Thomas Dekorsy and
• Sebastian Polarz

Beilstein J. Nanotechnol. 2015, 6, 2161–2172, doi:10.3762/bjnano.6.222

• concentration of the doping element, and for successful electronic modification it is mandatory that the introduced heteroelement occupies a defined position in the lattice of the host material. In the case of ZnO, most attention has been attributed so far to n-doping via substitution of Zn2+ by other metals

• ], most attention was devoted to n-doping via substitution in the cation (Zn2+) lattice. The most prominent example known to date is aluminium-doped ZnO (AZO) [21][22]. AZO contains much more common elements compared to ITO, however, it cannot yet compete regarding its electrical properties. Much less

• growth. However, the main focus of the current study was to prove the successful incorporation of Cl, and in particular its positioning on the lattice positions of oxygen (ClO•), which leads to n-doping and opens up a perspective to use the materials as potential TCO materials in the future. Although it

Transformation of hydrogen titanate nanoribbons to TiO₂ nanoribbons and the influence of the transformation strategies on the photocatalytic performance

• Melita Rutar,
• Nejc Rozman,
• Matej Pregelj,
• Carla Bittencourt,
• Romana Cerc Korošec,
• Andrijana Sever Škapin,
• Aleš Mrzel,
• Srečo D. Škapin and
• Polona Umek

Beilstein J. Nanotechnol. 2015, 6, 831–844, doi:10.3762/bjnano.6.86

• calcinating in air, the photocatalytic performance of the investigated TiO2 NRs increased with an increased content of anatase. In contrast, the photocatalytic performance of the N-doped TiO2 NRs showed no dependence on the calcination temperature. An additional comparison showed that the N-doping

• time, to the best of our knowledge, a hydrothermal transformation conducted in NH3(aq) is reported. The transformations performed in the NH3(g)/Ar(g) flow or NH3(aq) led to N doping. The obtained samples were characterized with a variety of analytical techniques, with the aim being to evaluate the TiO2

• substitutional N doping, which was reported to be due to the fact that the nitrogen atom of the NH3 molecule is “indirectly” bonded to three Ti atoms and thus replaces lattice oxygen in the TiO2 matrix [33]. In contrast to TN-400 and TN-650 (Figure 7A and Figure 7B), in the N 1s XPS spectrum of CH-N (Figure 7C

Filling of carbon nanotubes and nanofibres

• Reece D. Gately and
• Marc in het Panhuis

Beilstein J. Nanotechnol. 2015, 6, 508–516, doi:10.3762/bjnano.6.53

• was used as an efficient source for N-doping [110]. The chamber was then heated to 950 °C, with an effective heating of the ferrocene and melamine to 350 °C. At this temperature both compounds undergo sublimation. After the purification steps, it was found that the resulting MWCNTs were highly doped

Electronic and electrochemical doping of graphene by surface adsorbates

• Hugo Pinto and
• Alexander Markevich

Beilstein J. Nanotechnol. 2014, 5, 1842–1848, doi:10.3762/bjnano.5.195

• reaction proceed at room temperature. The total Gibbs free energy change is given by ΔG + W for p-doping and ΔG − W for n-doping, where ΔG is the free energy for the molecular reaction and W is the work function of graphene. The work function of graphene is expected to be similar to that of graphite, about

Review of nanostructured devices for thermoelectric applications

• Giovanni Pennelli

Beilstein J. Nanotechnol. 2014, 5, 1268–1284, doi:10.3762/bjnano.5.141

Sublattice asymmetry of impurity doping in graphene: A review

• James A. Lawlor and
• Mauro S. Ferreira

Beilstein J. Nanotechnol. 2014, 5, 1210–1217, doi:10.3762/bjnano.5.133

• in realising this goal. Atomic dopants like boron (B) or nitrogen (N) are a similar size to carbon and can be introduced easily in a variety of graphene growth processes, typically replacing carbon sites and forming substitutional impurities in the lattice, positively (p-) and negatively (n-) doping

Nanostructure sensitization of transition metal oxides for visible-light photocatalysis

• Hongjun Chen and
• Lianzhou Wang

Beilstein J. Nanotechnol. 2014, 5, 696–710, doi:10.3762/bjnano.5.82

• [38]. A synergetic effect of nitrogen-doping and CdSe quantum-dot-sensitization on nanocrystalline TiO2 was also investigated. Interestingly, a significant photoelectrochemical hydrogen generation enhancement was observed due to CdSe sensitization and N-doping that can facilitate hole transport from

• CdSe to TiO2 via oxygen vacancy states mediated by N-doping [39][40]. There are also a large number of heterostructures in literature consisting of quantum dots and transition metal oxides, for instance, CdS/CdSe co-sensitized TiO2 [41], CdTe or CdTe/CdSe quantum dots on TiO2 nanotube arrays [42][43

• spectra between transition metal oxides and gold nanoparticles. Due to N-doping and N- and F-impurities generated in the anodization process, the N-doped TiO2 nanoparticles and TiO2 nanotubes have absorption spectra in the visible range and show an overlap with that of gold nanoparticles. Therefore, when

Tensile properties of a boron/nitrogen-doped carbon nanotube–graphene hybrid structure

• Kang Xia,
• Haifei Zhan,
• Ye Wei and
• Yuantong Gu

Beilstein J. Nanotechnol. 2014, 5, 329–336, doi:10.3762/bjnano.5.37

• of the dopant concentration, however, does not further reduce YS and YP. It is interesting to mention that an earlier work reported that 2% of N-doping in graphene monolayers induce a reduction of YS of more than 35% [10], which is much more significant than the reduction observed in the hybrid

En route to controlled catalytic CVD synthesis of densely packed and vertically aligned nitrogen-doped carbon nanotube arrays

• Slawomir Boncel,
• Sebastian W. Pattinson,
• Valérie Geiser,
• Milo S. P. Shaffer and
• Krzysztof K. K. Koziol

Beilstein J. Nanotechnol. 2014, 5, 219–233, doi:10.3762/bjnano.5.24

• ] atoms has been frequently used to enhance or tune their physicochemical properties. Among the elemental dopants, nitrogen emerges as of particular interest in electronics since N-CNTs should be characterized by a higher electrical conductivity (n-doping). Consequently, the significance of N-CNTs in a

• plasma enhancements, with typical parameters of the synthesis being the selection of the nitrogen source and/or the catalyst, and temperature. The literature survey (Table 1) shows that the N-doping of CNTs usually induced lattice deformations, i.e., the formation of regular and irregular compartments

• it is the presence of nitrogen species, which affects the growth of N-CNTs and, further, their morphology. Additionally, ID/IG ratios increase with an increased N-doping at higher temperature. Continuing our insights into the mechanism of N-CNTs growth, we have investigated particular stages of the