Sidewall angle tuning in focused electron beam-induced processing

• Sangeetha Hari,
• Willem F. van Dorp,
• Johannes J. L. Mulders,
• Piet H. F. Trompenaars,
• Pieter Kruit and
• Cornelis W. Hagen

Beilstein J. Nanotechnol. 2024, 15, 447–456, doi:10.3762/bjnano.15.40

• coating ensures a strong SE contrast with the carbon deposit due to its significantly higher SE yield, and it prevents the eventual electron beam-induced decomposition of the native oxide layer of the Si substrate. For the carbon deposition, dodecane was used as a precursor. For FEBIE, water was chosen as

• within which SE2 are created is larger in the Si substrate than in the C deposit (2.7 and 1.6 μm, respectively [24]). Note that the thin Au–Pd and Ti coating is ignored here, as most of the interaction volume will be in the underlying Si substrate at 20 keV. Therefore, the width of the distribution of SE

Heat-induced morphological changes in silver nanowires deposited on a patterned silicon substrate

• Elyad Damerchi,
• Sven Oras,
• Edgars Butanovs,
• Allar Liivlaid,
• Mikk Antsov,
• Boris Polyakov,
• Annamarija Trausa,
• Veronika Zadin,
• Andreas Kyritsakis,
• Loïc Vidal,
• Karine Mougin,
• Siim Pikker and
• Sergei Vlassov

Beilstein J. Nanotechnol. 2024, 15, 435–446, doi:10.3762/bjnano.15.39

• for various novel applications where arrays of metal nanostructures are used, such as surface-enhanced Raman spectroscopy substrates [36][37][38]. In this work, we deposited Ag NWs on specially patterned silicon (Si) substrates, so large fractions of NWs are partially suspended over the holes. Samples

• , which corresponds to the angle between (111) and (001) planes in Si. Samples for heat-treatment studies were prepared by drop-casting Ag NWs onto the patterned substrates from a solution. Since the width and period of the holes were intentionally made much smaller than the average length of NWs, many

• comparison with the work by Vigonski et al. [27] who used the same Ag NWs and heating methods for heat-treatment experiments of a flat Si substrate. Two heating schemes were implemented: In the scheme 1 (Figure 2), heating was applied in 10 min cycles at fixed temperatures followed by cooling to room

Classification and application of metal-based nanoantioxidants in medicine and healthcare

• Nguyen Nhat Nam,
• Nguyen Khoi Song Tran,
• Tan Tai Nguyen,
• Nguyen Ngoc Trai,
• Nguyen Phuong Thuy,
• Hoang Dang Khoa Do,
• Nhu Hoa Thi Tran and
• Kieu The Loan Trinh

Beilstein J. Nanotechnol. 2024, 15, 396–415, doi:10.3762/bjnano.15.36

• University, 1342 Seongnam-daero, Sujeong-gu, Seongnam-si 13120, Republic of Korea Department of Materials Science, School of Applied Chemistry, Tra Vinh University, Tra Vinh City 87000, Vietnam NTT Hi-Tech Institute, Nguyen Tat Thanh University, Ward 13, District 04, Ho Chi Minh City 70000, Vietnam Faculty

• of Materials Science and Technology, University of Science, Ho Chi Minh City, Vietnam Vietnam National University Ho Chi Minh City, Vietnam BioNano Applications Research Center, Gachon University, 1342 Seongnam-daero, Sujeong-gu, Seongnam-si 13120, Republic of Korea 10.3762/bjnano.15.36 Abstract

• apolipoprotein A-I and facilitates atherosclerosis [190]. Si nanoparticles were reported for their ability to invade the cytoplasm, modify the intracellular microstructure, and promote inflammatory reactions through activating NLRP3 inflammasomes [191]. Also, in an animal experiment, SiO2 nanoparticles induce

On the mechanism of piezoresistance in nanocrystalline graphite

• Sandeep Kumar,
• Simone Dehm and
• Ralph Krupke

Beilstein J. Nanotechnol. 2024, 15, 376–384, doi:10.3762/bjnano.15.34

• ][22]. The preliminary work on the piezoresistivity of NCG looked promising but was limited regarding the applied strain because of rigid SiO2/Si substrates. In this work, we focus on the piezoresistance measurements in NCG at larger strain values. Initially, a two-point bending setup is described

• . Experimental Piezoresistance measurements NCG was synthesized on a 300 nm SiO2/Si substrate by spin coating S1805 (1:10 dilution with propylene glycol methyl ether acetate, PGMEA) at 4000 rpm. The spin-coated Si/SiO2 substrate was loaded in a vacuum furnace and annealed at 600 °C for 10 h at 10−6 mbar. The

• measured thickness of the grown film was ca. 5 nm. The NCG film was then transferred onto a 100 μm thick PET substrate. For the transfer process, first, the NCG film on SiO2/Si was coated with 200 nm thick PMMA and put into 5 M NaOH solution at 80 °C. The NCG/PMMA film floats on the surface after the

Investigating ripple pattern formation and damage profiles in Si and Ge induced by 100 keV Ar⁺ ion beam: a comparative study

• Indra Sulania,
• Harpreet Sondhi,
• Tanuj Kumar,
• Sunil Ojha,
• G R Umapathy,
• Ambuj Mishra,
• Ambuj Tripathi,
• Richa Krishna,
• Devesh Kumar Avasthi and
• Yogendra Kumar Mishra

Beilstein J. Nanotechnol. 2024, 15, 367–375, doi:10.3762/bjnano.15.33

• fabrication on Si and Ge by 100 keV Ar+ ion beam bombardment is discussed. The irradiation was performed in the ion fluence range of ≈3 × 1017 to 9 × 1017 ions/cm2 and at an incident angle of θ ≈ 60° with respect to the surface normal. The investigation focuses on topographical studies of pattern formation

• using atomic force microscopy, and induced damage profiles inside Si and Ge by Rutherford backscattering spectrometry and transmission electron microscopy. The ripple wavelength was found to scale with ion fluence, and energetic ions created more defects inside Si as compared to that of Ge. Although

• earlier reports suggested that Ge is resistant to structural changes upon Ar+ ion irradiation, in the present case, a ripple pattern is observed on both Si and Ge. The irradiated Si and Ge targets clearly show visible damage peaks between channel numbers (1000–1100) for Si and (1500–1600) for Ge. The

Modulated critical currents of spin-transfer torque-induced resistance changes in NiCu/Cu multilayered nanowires

• Mengqi Fu,
• Roman Hartmann,
• Julian Braun,
• Sergej Andreev,
• Torsten Pietsch and
• Elke Scheer

Beilstein J. Nanotechnol. 2024, 15, 360–366, doi:10.3762/bjnano.15.32

• vertically patterned magnetic nanowires on a Si substrate. With this approach we fabricated three-dimensional nanowire-based spin valve devices without the need of complex etching processes or additional spacer coating. Through this method, we successfully obtained NiCu/Cu multilayered nanowire arrays with a

• fabricated through a newly developed method, which enables to selectively deposit the magnetic nanowires on the Si substrate and to fabricate three-dimensional (3D) devices contacting a few or even single nanowires without complex etching processes [17] or additional spacer coating [18][19]. Results and

• Discussion The AAO template was fabricated by directly anodizing a ca. 1 µm thick aluminum (Al) film on a silicon (Si) substrate covered with 200 nm SiO2 and patterned Ti/Au (5/50 nm) bottom electrodes. It has pores with a diameter of around 35 nm, an interpore distance of around 50 nm, and a height of

Controllable physicochemical properties of WO_x thin films grown under glancing angle

• Rupam Mandal,
• Aparajita Mandal,
• Alapan Dutta,
• Rengasamy Sivakumar,
• Sanjeev Kumar Srivastava and
• Tapobrata Som

Beilstein J. Nanotechnol. 2024, 15, 350–359, doi:10.3762/bjnano.15.31

• property modulations of the as-deposited and annealed films. The analyses show a reasonably good correlation with photoelectron spectroscopic measurements on the films and the bulk I–V characteristics acquired on a series of WOx/p-Si heterojunction diodes. The presence of a critical WOx thickness is

• identified to regulate the rectification ratio values at the WOx/p-Si heterostructures and increase in series resistance within the bulk of the films. The present study provides valuable insights to correlate optical, electrical, and structural properties of WOx thin films, which will be beneficial for

• , heterostructures having an n-type WOx layer on various p-type substrates such as p-Si [12][13], Cu2O [14], NiO [15], p-ZnO nanowires (NWs) [16], diamond [17], and BiVO4 [18], have a great technological importance in the field of heterojunction solar cells, LEDs, and resistance random access memory (RRAM) devices

Comparative electron microscopy particle sizing of TiO₂ pigments: sample preparation and measurement

• Ralf Theissmann,
• Christopher Drury,
• Markus Rohe,
• Thomas Koch,
• Jochen Winkler and
• Petr Pikal

Beilstein J. Nanotechnol. 2024, 15, 317–332, doi:10.3762/bjnano.15.29

• both MinFeret and MaxFeret (Cauchy). These were then compared with nitrogen absorption (BET) measurements. Surface area and volume were calculated for each measured particle and the SSA was calculated using the following formula: where Si is the surface area of the i-th particle, Vi is volume of the i

Determining by Raman spectroscopy the average thickness and N-layer-specific surface coverages of MoS₂ thin films with domains much smaller than the laser spot size

• Felipe Wasem Klein,
• Jean-Roch Huntzinger,
• Vincent Astié,
• Damien Voiry,
• Romain Parret,
• Houssine Makhlouf,
• Sandrine Juillaguet,
• Jean-Manuel Decams,
• Sylvie Contreras,
• Périne Landois,
• Ahmed-Azmi Zahab,
• Jean-Louis Sauvajol and
• Matthieu Paillet

Beilstein J. Nanotechnol. 2024, 15, 279–296, doi:10.3762/bjnano.15.26

• SiO2 on Si substrates. Then, we discuss the applicability of the same criteria for significantly different DLI-PP-CVD MoS2 samples with average thicknesses ranging from sub-monolayer up to three layers. Finally, an original procedure based on the measurement of the intensity of the layer breathing

• growth of wafer-scale MoS2 thin films on SiO2/Si substrates by direct liquid injection pulsed-pressure chemical vapor deposition (DLI-PP-CVD) using low-toxicity precursors [27]. Such MoS2 thin films showed good stoichiometry (Mo/S = 1.94–1.95) and the potential for high photoluminescence quantum yield

• samples are well-characterized, either mechanically exfoliated or standard CVD MoS2 large flakes deposited on 90 ± 6 nm SiO2 on Si substrates. Then, we determine which Raman information is relevant to estimate the average thickness of MoS2 samples produced by the DLI-PP-CVD method, which are constituted

Design, fabrication, and characterization of kinetic-inductive force sensors for scanning probe applications

• August K. Roos,
• Ermes Scarano,
• Elisabet K. Arvidsson,
• Erik Holmgren and
• David B. Haviland

Beilstein J. Nanotechnol. 2024, 15, 242–255, doi:10.3762/bjnano.15.23

• nitride (Nb-Ti-N) [20][25], or granular aluminum (grAl) [26][27], wolfram (W) [28], and silicon doped with boron (Si:B) [29]. Results and Discussion Figure 1 gives an overview of our fabricated sensor, showing the main components. The cantilever is a 600 nm thick Si-N triangular plate released from a much

• thicker silicon (Si) support, as shown in Figure 1a and Figure 1g. Figure 1a shows the microwave resonant circuit with its interdigital capacitor in series with the nanowire inductor. The meandering nanowire is placed at the base of the cantilever as shown in Figure 1c, in the area of largest strain

• increases because of increasing quasiparticle population, leading us to select Nb-Ti-N with its high (bulk) critical temperature Tc ≈ 14 K. Mechanical simulations Several considerations determine the design of the Si-N cantilever in the scanning force sensor. The Si-N plate thickness is fixed when

Quantitative wear evaluation of tips based on sharp structures

• Ke Xu and
• Houwen Leng

Beilstein J. Nanotechnol. 2024, 15, 230–241, doi:10.3762/bjnano.15.22

• optimizing scan parameters to minimize tip wear while maintaining high-quality AFM imaging. All wear test experiments were conducted using a new needle tip to scan samples of a Si sample coated with gold. The needle tip diameters in each group of experiments were kept similar, avoiding the impact of

Multiscale modelling of biomolecular corona formation on metallic surfaces

• Parinaz Mosaddeghi Amini,
• Ian Rouse,
• Julia Subbotina and
• Vladimir Lobaskin

Beilstein J. Nanotechnol. 2024, 15, 215–229, doi:10.3762/bjnano.15.21

• employ SI units in the above calculation, noting that ka must then be multiplied by 1000 to convert from units m3·mol−1 to L·mol−1. Desorption rates are found by requiring that where Eads is the value obtained for that orientation using UnitedAtom [45]. A concentration is then assigned to the adsorbate

Ion beam processing of DNA origami nanostructures

• Leo Sala,
• Agnes Zerolová,
• Violaine Vizcaino,
• Alain Mery,
• Alicja Domaracka,
• Hermann Rothard,
• Philippe Boduch,
• Dominik Pinkas and
• Jaroslav Kocišek

Beilstein J. Nanotechnol. 2024, 15, 207–214, doi:10.3762/bjnano.15.20

• nanopatterning approach. Direct combination of this approach with top-down nanotechnology, such as ion beams, has not been considered because of the soft nature of the DNA material. Here we demonstrate that the shape of 2D DNA origami nanostructures deposited on Si substrates is well preserved upon irradiation

• by ion beams, modeling ion implantation, lithography, and sputtering conditions. Structural changes in 2D DNA origami nanostructures deposited on Si are analyzed using AFM imaging. The observed effects on DNA origami include structure height decrease or increase upon fast heavy ion irradiation in

• nanometer scale and the nanometric precision of DNA origami-based assembly open possibilities in more precise tuning and control of nanofabrication. Here we analyze the consequences of ion beam irradiation on 2D DNA origami nanotriangles deposited on Si as a model substrate and resulting nanostructure

Graphene removal by water-assisted focused electron-beam-induced etching – unveiling the dose and dwell time impact on the etch profile and topographical changes in SiO₂ substrates

• Aleksandra Szkudlarek,
• Jan M. Michalik,
• Inés Serrano-Esparza,
• Zdeněk Nováček,
• Veronika Novotná,
• Piotr Ozga,
• Czesław Kapusta and
• José María De Teresa

Beilstein J. Nanotechnol. 2024, 15, 190–198, doi:10.3762/bjnano.15.18

• of concept of water-assisted graphene etching. Moreover, the effects of changes in the topography of Si/SiO2 substrate during this process have not been addressed so far, as they may be observed only under certain experimental conditions. In a standard scanning electron microscope, the morphological

• the dissociated products of residual water molecules was not provided. An emission of charged Si and O ions from the SiO2 surface upon electron exposure was studied in the 1990s. This phenomenon, known as electron-stimulated desorption (ESD) was observed in UHV conditions by Baragiola et al. [25] and

• Chen et al. [26] as an effect of the interaction with strong trapped charges (holes), although under much higher electron doses (>3 × 106 nC/μm2) or beam currents (> μA) compared to those used in our studies. For this work, we selected high-quality graphene, mechanically exfoliated onto a SiO2/Si

Modification of graphene oxide and its effect on properties of natural rubber/graphene oxide nanocomposites

• Nghiem Thi Thuong,
• Le Dinh Quang,
• Vu Quoc Cuong,
• Cao Hong Ha,
• Nguyen Ba Lam and
• Seiichi Kawahara

Beilstein J. Nanotechnol. 2024, 15, 168–179, doi:10.3762/bjnano.15.16

• recorded with a solid CP/MAS probe. In 29Si NMR spectra, the complete hydrolysis and condensation of VTES will result in the signal T3, corresponding to the R-Si(OSi)3 structure, and the incomplete hydrolysis and condensation of VTES will be accompanied by the T2 signal, which corresponds to R–Si(OSi

• )2OC2H5 or R–Si(OSi)2OH. As shown in Figure 4, two signals appeared at chemical shifts −69 and −79 ppm. The signal at −69 ppm was assigned to the Si atom in the T2 structure (i.e., CH2=CH–Si(O–Si)2(OC2H5) or CH2=CH–Si(O–Si)2(OH)). On the other hand, the signal at −79 ppm was assigned to the Si atom in the

• T3 structure (i.e., CH2=CH–Si(O–Si)3) [17]. It was noted that the intensity ratios of T3 to T2 signals for GO-VTES(b) were higher than that of GO-VTES(a). The higher intensity ratios of the T3 to T2 signals demonstrated that hydrolysis and condensation were more completed in GO-VTES(b) than in GO

Curcumin-loaded nanostructured systems for treatment of leishmaniasis: a review

• Douglas Dourado,
• Thayse Silva Medeiros,
• Éverton do Nascimento Alencar,
• Edijane Matos Sales and
• Fábio Rocha Formiga

Beilstein J. Nanotechnol. 2024, 15, 37–50, doi:10.3762/bjnano.15.4

• IC50 values of 0.15 ± 0.08, 0.09 ± 0.07, and 0.07 ± 0.04 μM and selectivity index (SI) of 80, 255, and 314, respectively. In addition to the influence of the nanostructure, sugar promotes greater internalization of these nanoparticles due to the mannose receptors on the surface of macrophages [111

Measurements of dichroic bow-tie antenna arrays with integrated cold-electron bolometers using YBCO oscillators

• Leonid S. Revin,
• Dmitry A. Pimanov,
• Alexander V. Chiginev,
• Anton V. Blagodatkin,
• Viktor O. Zbrozhek,
• Andrey V. Samartsev,
• Anastasia N. Orlova,
• Dmitry V. Masterov,
• Alexey E. Parafin,
• Victoria Yu. Safonova,
• Anna V. Gordeeva,
• Andrey L. Pankratov,
• Leonid S. Kuzmin,
• Anatolie S. Sidorenko,
• Silvia Masi and
• Paolo de Bernardis

Beilstein J. Nanotechnol. 2024, 15, 26–36, doi:10.3762/bjnano.15.3

• of the antenna array is 340 µm in both directions for 210 and 240 GHz channels. The frequency response of the two-frequency receiving matrix with a Si substrate thickness of 260 µm is shown in Figure 2 (solid curves). To compare the calculated response with the experimental results, we also added

• curves for a Si substrate thickness of 290 µm (dashed curves). As a result of frequency response optimizations, the following characteristics were obtained: The bandwidth for the 210 GHz channel at half power level is 25.46 GHz, and the maximum absorption occurs at a frequency of 212.1 GHz; the bandwidth

• –frequency characteristics of resonant bolometers was set up as follows: The generator chip with JJs was mounted on the sample holder with a 4 mm Si hyperhemispherical lens thermally coupled with a 2.7 K cryostat plate. The control magnetic field required to create a flux-flow regime in a long Josephson

TEM sample preparation of lithographically patterned permalloy nanostructures on silicon nitride membranes

• Joshua Williams,
• Michael I. Faley,
• Joseph Vimal Vas,
• Peng-Han Lu and
• Rafal E. Dunin-Borkowski

Beilstein J. Nanotechnol. 2024, 15, 1–12, doi:10.3762/bjnano.15.1

• , we initially fabricated the nanostructures on a 200 µm thick Si substrate with 100 nm thick SiN buffer layers on both sides. The buffer layers were deposited with low-pressure CVD to ensure stress-free films. The fabrication process is shown in Figure 10. First, we made the nanostructure using lift

• KOH solution resulted in a faster etch rate but led to much stronger bubbling and roughening of the Si surface with the creation of micropyramidal hillocks [31]. The surface alignment of the Si substrates is parallel to the {100} crystallographic plane of Si, and the anisotropic KOH etching results in

• a 54.7° slope with respect to the etched surface on the sidewalls. Because of the (010) edge orientation of Si substrates, etching occurs faster in diagonal directions of the substrates, resulting in sharp edges on the structure (Figure 11b). Magnetic measurements Setup All TEM magnetic measurements

Determination of the radii of coated and uncoated silicon AFM sharp tips using a height calibration standard grating and a nonlinear regression function

• Perawat Boonpuek and
• Jonathan R. Felts

Beilstein J. Nanotechnol. 2023, 14, 1200–1207, doi:10.3762/bjnano.14.99

• -coated, Cr/Au-coated, and uncoated Si tips were used to scan a calibration standard grating in AFM contact mode with sub-nanonewton load to obtain the curved scan profile of the edge corner of the grating structure. The data points of the curved profile of each tip were fitted with a nonlinear regression

• function to estimate the curvature radius of the tip. The results show that the estimated radius of the coated tips is in the range of nominal values provided by the tip manufacturer, while the estimated radius of the uncoated Si tip is bigger than the nominal radius because of tip blunting during the scan

• in situ determinations of the tip characterizer shape revealed that the radius of curvature of the Si corner edge of the standard grating is sharper (usually <2 nm [16]) than the tip end. Although we do not know the exact value of the edge radius of the height grate from its specification sheet for

A combined gas-phase dissociative ionization, dissociative electron attachment and deposition study on the potential FEBID precursor [Au(CH₃)₂Cl]₂

• Elif Bilgilisoy,
• Ali Kamali,
• Thomas Xaver Gentner,
• Gerd Ballmann,
• Sjoerd Harder,
• Hans-Peter Steinrück,
• Hubertus Marbach and
• Oddur Ingólfsson

Beilstein J. Nanotechnol. 2023, 14, 1178–1199, doi:10.3762/bjnano.14.98

• (500 nm)/Si(111) In this experiment, 4 × 4 µm2 FEBID structures were written with [Au(CH3)2Cl]2 as the precursor using an acceleration voltage of 5 keV and a beam current of 1.5 nA. The fabricated structures were examined with scanning electron microscopy (SEM) and Auger electron spectroscopy (AES

• (500 nm)/Si(111) substrate (black spectrum), only two main AES signals are visible: The peak at 272 eV is attributed to CKLL Auger transitions of carbon [34], and the peaks at 468, 483, and 503 eV to OKLL Auger transitions of SiO2 [34]. After deposition, AES signals at 69, 181, 272, and 430 eV are

• ]. The image after the background subtraction is shown in Figure 1d, where the particles can be more clearly distinguished. After background subtraction, some of the deposited nanoparticles appear facetted; however, the majority are spherical. HAADF-STEM on FEBID (SiO2 (500 nm)/Si(111)) As a next step

Spatial variations of conductivity of self-assembled monolayers of dodecanethiol on Au/mica and Au/Si substrates

• Julian Skolaut,
• Jędrzej Tepper,
• Federica Galli,
• Wulf Wulfhekel and
• Jan M. van Ruitenbeek

Beilstein J. Nanotechnol. 2023, 14, 1169–1177, doi:10.3762/bjnano.14.97

• /Si; conductive atomic force microscopy; dodecanethiol; self-assembled monolayers; Introduction For decades, the need for miniaturization of electronics has pushed the research field into the direction of bottom-up, rather than top-down, approaches. In this research field, molecular electronics [1][2

• substrates consisting of thin Au layers of different surface roughness. We compare granular Au films deposited on Si wafers with epitaxial (flat) Au films on mica. Experimental Before the experimental results are presented, this section focuses on the preparation of the samples under study and the setup used

• to carry out the measurements. As mentioned above, two types of Au substrates were used, that is, Au-coated Si (Au/Si) and epitaxially grown Au on mica (Au/mica), bought from Sigma-Aldrich and Phasis, respectively. The Au thicknesses are 200 nm for Au/mica and 100 nm for Au/Si substrates. The Au/mica

Hierarchically patterned polyurethane microgrooves featuring nanopillars or nanoholes for neurite elongation and alignment

• Lester Uy Vinzons,
• Guo-Chung Dong and
• Shu-Ping Lin

Beilstein J. Nanotechnol. 2023, 14, 1157–1168, doi:10.3762/bjnano.14.96

• ], poly(lactic-co-glycolic acid) nanodots enhanced the proliferation and neurite sprouting of Neuro-2a cells [7], and oriented elliptical Si microcones induced alignment and increased fasciculation in rat superior cervical ganglion axons [8]. With their effects complementing those of continuous structures

A multi-resistance wide-range calibration sample for conductive probe atomic force microscopy measurements

• François Piquemal,
• Khaled Kaja,
• Pascal Chrétien,
• José Morán-Meza,
• Frédéric Houzé,
• Christian Ulysse and
• Abdelmounaim Harouri

Beilstein J. Nanotechnol. 2023, 14, 1141–1148, doi:10.3762/bjnano.14.94

• measurements on gold pads, this observation was systematically made for the I–V curves measured on all gold electrode arms. Through further investigations, we were able to associate this observation with the use of worn AFM diamond tips, especially formed by a p-type diamond coating on a highly doped n-type Si

Properties of tin oxide films grown by atomic layer deposition from tin tetraiodide and ozone

• Kristjan Kalam,
• Peeter Ritslaid,
• Tanel Käämbre,
• Aile Tamm and
• Kaupo Kukli

Beilstein J. Nanotechnol. 2023, 14, 1085–1092, doi:10.3762/bjnano.14.89

• Kristjan Kalam Peeter Ritslaid Tanel Kaambre Aile Tamm Kaupo Kukli Institute of Physics, University of Tartu, W. Ostwaldi 1, 50411 Tartu, Estonia 10.3762/bjnano.14.89 Abstract Polycrystalline SnO2 thin films were grown by atomic layer deposition (ALD) on SiO2/Si(100) substrates from SnI4 and O3

• , the cycle times for SnO2 were kept at 5-2-5-5 s, respectively, for the following sequence: metal precursor pulse, N2 purge pulse, O3 pulse, and N2 purge pulse. The films were grown on Si(100) cleansed and etched prior to the growth. An X-ray fluorescence spectrometer Rigaku ZSX 400 with the program

Spatial mapping of photovoltage and light-induced displacement of on-chip coupled piezo/photodiodes by Kelvin probe force microscopy under modulated illumination

• Zeinab Eftekhari,
• Nasim Rezaei,
• Hidde Stokkel,
• Jian-Yao Zheng,
• Andrea Cerreta,
• Ilka Hermes,
• Minh Nguyen,
• Guus Rijnders and
• Rebecca Saive

Beilstein J. Nanotechnol. 2023, 14, 1059–1067, doi:10.3762/bjnano.14.87

• from the top reached the Si p–n junction and generated electron–hole pairs, building a potential difference across the junction. The generated photovoltage was applied to the piezoelectric capacitor through the photolithographically defined contacts and induced mechanical displacement in the

• the Si photodiode and lead to a nonzero baseline. However, it does not affect the photovoltage as the peak-to-peak potential was calculated. Comparative measurements over a micrometric area of the sample were performed (see Supporting Information File 1). The CPD of a 1 μm2 area at the center of the

• membrane with a maximum of 946 pm, while decreasing to a few picometers at the side edges. The decay of displacement from the center to the edge is expected from the clamping effect at the edges, where the Si substrate is thicker [38]. The measured CPD shift in Figure 3b indicates that the photovoltage