Thermal oxidation process on Si(113)-(3 × 2) investigated using high-temperature scanning tunneling microscopy

• Hiroya Tanaka,
• Shinya Ohno,
• Kazushi Miki and
• Masatoshi Tanaka

Beilstein J. Nanotechnol. 2022, 13, 172–181, doi:10.3762/bjnano.13.12

• oxidation modes – oxidation, etching, and transition modes – in the third of which both oxidation and etching occur. A precise temperature–pressure growth mode diagram was obtained via careful measurements for Si(113), and the results were compared with those for Si(111) in the present work and Si(001) in

• ) has been used as the ideal tool to investigate reaction dynamics on surfaces. In our previous studies, we applied our VT-STM to investigate hydrogen diffusion [5] and titanium silicide formation [6] on Si(001). In our previous studies of oxidation on Si(113), we investigated the electronic states of

• ) substrate dramatically, so that it was close to that of Si(001) [1]. To gain insight into the origin of this remarkable reduction in Dit, it is necessary to understand the dynamic processes that occur during thermal oxidation more precisely. To this end, we observed the reaction dynamics during thermal

Extended iron phthalocyanine islands self-assembled on a Ge(001):H surface

• Rafal Zuzak,
• Marek Szymonski and
• Szymon Godlewski

Beilstein J. Nanotechnol. 2021, 12, 232–241, doi:10.3762/bjnano.12.19

• on hydrogen-passivated Si or Ge surfaces [36][37][38][39]. For instance, it has been shown that on Ge(001):H those molecules form hexagonal islands composed from flat-lying molecules that are sufficiently decoupled from the underlying semiconductor [36]. Vicinal Si(001):H has been applied in order to

• the passivation of semiconducting materials, which removes surface dangling bonds and significantly reduces surface reactivity, may also provide a sufficiently insulating layer for an efficient decoupling of molecular structures from the substrate influence. Among such surfaces, hydrogen-passivated Si

• (001):H [22][23], Si(111):H [24], and Ge(001):H [25][26][27][28] surfaces are most commonly mentioned. Iron phthalocyanines (FePc) have been studied on Si(111):H [24] and it was concluded that the molecules are weakly coupled to the substrate. Interestingly, in another study, it has been reported that

Analysis of catalyst surface wetting: the early stage of epitaxial germanium nanowire growth

• Owen C. Ernst,
• Felix Lange,
• David Uebel,
• Thomas Teubner and
• Torsten Boeck

Beilstein J. Nanotechnol. 2020, 11, 1371–1380, doi:10.3762/bjnano.11.121

• . However, the general qualitative trend was maintained when individual experiments were performed on Si(001) substrates. In the case of silicon oxide, due to its isotropy, these effects cannot be considered. Growth of germanium nanowires The main reason why germanium nanowires grow on silicon but not on

• immediately before transferring to the UHV system. Before the growth of the nanowires, the Si(111) substrates were annealed at 900 °C for 30 min to desorb residual silicon oxide from the surface. The second substrate consisted of a chemical vapour deposited SiOx layer (thickness of 500 nm) on top of a Si(001

• microbalance (Bad Ragaz, Switzerland). Series of experiments were carried out at substrate temperatures of 300, 400, 500, 550, 600, and 650 °C, in case of SiOx on Si(001), and substrate temperatures in the range of 400 to 700 °C, in steps of 50 K, for Si(111) wafers. The gold droplet formation was analysed

Oblique angle deposition of nickel thin films by high-power impulse magnetron sputtering

• Hamidreza Hajihoseini,
• Movaffaq Kateb,
• Snorri Þorgeir Ingvarsson and
• Jon Tomas Gudmundsson

Beilstein J. Nanotechnol. 2019, 10, 1914–1921, doi:10.3762/bjnano.10.186

• was 25 cm. We used thermally oxidized Si(001) with an oxide thickness of 100 nm as substrates. However, for the scanning electron microscopy studies, Si(001) substrates with native oxide were used in order to eliminate the charging effect. All films were deposited at room temperature (25 °C) with a

Fabrication and characterization of Si_1−xGe_x nanocrystals in as-grown and annealed structures: a comparative study

• Muhammad Taha Sultan,
• Adrian Valentin Maraloiu,
• Ionel Stavarache,
• Jón Tómas Gudmundsson,
• Andrei Manolescu,
• Valentin Serban Teodorescu,
• Magdalena Lidia Ciurea and
• Halldór Gudfinnur Svavarsson

Beilstein J. Nanotechnol. 2019, 10, 1873–1882, doi:10.3762/bjnano.10.182

• study reveals that strain and its influence on the NCs/matrix interface morphology play a vital role in determining spectral features and sensitivity. Experimental A multilayer structure with stacking order of SiO2/SiGe/SiO2 was prepared by magnetron sputtering over a 12 × 12 mm2 Si(001) substrate

Nanoantenna structures for the detection of phonons in nanocrystals

• Alexander G. Milekhin,
• Sergei A. Kuznetsov,
• Ilya A. Milekhin,
• Larisa L. Sveshnikova,
• Tatyana A. Duda,
• Ekaterina E. Rodyakina,
• Alexander V. Latyshev,
• Volodymyr M. Dzhagan and
• Dietrich R. T. Zahn

Beilstein J. Nanotechnol. 2018, 9, 2646–2656, doi:10.3762/bjnano.9.246

• , differing in nanoantenna length and lateral periodicity, were fabricated on bare Si(001) substrates and substrates covered with SiO2 layers of different (5–100 nm) thicknesses by direct electron beam writing (Raith-150, Germany) as described earlier [23][31]. For H-shaped nanoantennas, additional Au

• symmetric cross-arms were introduced on the nanoantenna edges of the linear nanoantennas. The microantenna arrays with the overall dimensions of 8 × 8 mm2 were patterned on Si(001) substrates using a conventional photolithography technique. The width (height) of microantennas was chosen to be 4 µm (50 nm

Relationships between chemical structure, mechanical properties and materials processing in nanopatterned organosilicate fins

• Gheorghe Stan,
• Richard S. Gates,
• Qichi Hu,
• Kevin Kjoller,
• Craig Prater,
• Kanwal Jit Singh,
• Ebony Mays and
• Sean W. King

Beilstein J. Nanotechnol. 2017, 8, 863–871, doi:10.3762/bjnano.8.88

• deposit a 120 nm thick organosilicate on a 100 nm SiO2 thin film previously grown on a 300 mm diameter Si(001) substrate. During deposition of the organosilicate, a second-phase organic pore building “porogen” material was co-incorporated in the organosilicate film and then sacrificially removed using UV

Fabrication of black-gold coatings by glancing angle deposition with sputtering

• Alan Vitrey,
• Rafael Alvarez,
• Alberto Palmero,
• María Ujué González and
• José Miguel García-Martín

Beilstein J. Nanotechnol. 2017, 8, 434–439, doi:10.3762/bjnano.8.46

• , respectively. Two different monocrystalline substrates have been used: opaque Si(001) and transparent MgO(001). The tilt angle, σ, was varied from 75 to 87°. A scheme of the set-up is depicted in Figure 1. For the sake of comparison, continuous thin films were also fabricated using the standard configuration

• transmittance measurements have been performed using unpolarized light with almost normal incidence in the VIS–nIR range and an Andor Shamrock spectrometer. Results and Discussion Figure 2a shows a photograph of two samples prepared onto Si(001) substrates with 1 cm2 area: the one on the left was prepared with

Orientation of FePt nanoparticles on top of a-SiO₂/Si(001), MgO(001) and sapphire(0001): effect of thermal treatments and influence of substrate and particle size

• Martin Schilling,
• Paul Ziemann,
• Zaoli Zhang,
• Johannes Biskupek,
• Ute Kaiser and
• Ulf Wiedwald

Beilstein J. Nanotechnol. 2016, 7, 591–604, doi:10.3762/bjnano.7.52

• to the chemically ordered face-centered tetragonal (fct) L10 phase. If the c-axis of the tetragonal system can be aligned normal to the substrate plane, perpendicular magnetic recording could be achieved. Here, we study the orientation of FePt NPs and films on a-SiO2/Si(001), i.e., Si(001) with an

• coalescence, growth or Ostwald ripening by annealing can be completely avoided [15]. In the present study we investigate the possibility of a structural (re)orientation of FePt NPs and thin films on a-SiO2/Si(001), MgO(001), and sapphire(0001) after different in situ annealing steps by HRTEM and RHEED

• a much larger area. Such combined information was used here to investigate the orientation of FePt NPs on MgO(001) initiating then further RHEED studies on a-SiO2/Si(001) and sapphire(0001) substrates. Experimental FePt NPs were prepared by a micellar technique, which allows for controlling the

Nanoporous Ge thin film production combining Ge sputtering and dopant implantation

• Jacques Perrin Toinin,
• Alain Portavoce,
• Khalid Hoummada,
• Michaël Texier,
• Maxime Bertoglio,
• Sandrine Bernardini,
• Marco Abbarchi and
• Lee Chow

Beilstein J. Nanotechnol. 2015, 6, 336–342, doi:10.3762/bjnano.6.32

• annealing with TB = 4.8 µm. SEM plan-view image obtained after annealing a 340 nm thick Ge layer sputtered on the native Si oxide of a Si(001) substrate: (1) without implantation and TB = 0.64 µm; and (2) with Se implantation and TB = 8.7 µm. Surface density and average lateral size of the different

Si/Ge intermixing during Ge Stranski–Krastanov growth

• Alain Portavoce,
• Khalid Hoummada,
• Antoine Ronda,
• Dominique Mangelinck and
• Isabelle Berbezier

Beilstein J. Nanotechnol. 2014, 5, 2374–2382, doi:10.3762/bjnano.5.246

• Abstract The Stranski–Krastanov growth of Ge islands on Si(001) has been widely studied. The morphology changes of Ge islands during growth, from nucleation to hut/island formation and growth, followed by hut-to-dome island transformation and dislocation nucleation of domes, have been well described, even

• ; Stranski–Krastanov growth; Introduction The nucleation and growth of Ge islands on a Si(001) substrate have been the subject of numerous investigations with the aim of understanding the fundamental processes involved in the Stranski–Krastanov growth process and to produce original devices based on a Ge

• pressure in the 10–11 mbar range. The Si(001) substrate was chemically cleaned using a modified Radio Corporation of America (RCA) process before introduction in the MBE setup. First, the disilane gas was introduced into the growth chamber while increasing the substrate temperature (T) up to 850 °C in

STM tip-assisted engineering of molecular nanostructures: PTCDA islands on Ge(001):H surfaces

• Amir A. Ahmad Zebari,
• Marek Kolmer and
• Jakub S. Prauzner-Bechcicki

Beilstein J. Nanotechnol. 2013, 4, 927–932, doi:10.3762/bjnano.4.104

• shown in case of Si(001) [17], Si(111) [18] and Ge(001) [19] surfaces that such a passivating layer electronically decouples the molecule from the substrate and increases their mobility. In this article, high-resolution scanning tunneling microscope (STM) measurements of self-assembled perylene-3,4,9,10

• on top of the islands in rt STM (see Figure 1a). These images show that the islands have crystalline character, and the top-most layer closely resembles the herringbone structure found for the (102) plane of PTCDA bulk crystal [21][22]. Similar arrangements have been reported for the Si(001):H/PTCDA

Femtosecond-resolved ablation dynamics of Si in the near field of a small dielectric particle

• Paul Kühler,
• Daniel Puerto,
• Mario Mosbacher,
• Paul Leiderer,
• Francisco Javier Garcia de Abajo,
• Jan Siegel and
• Javier Solis

Beilstein J. Nanotechnol. 2013, 4, 501–509, doi:10.3762/bjnano.4.59

• Laboratories, Inc., nominal polydispersity 2%) stored in iso-propanol, were deposited on a Si(001)-wafer by means of spin coating. Using this technique it is feasible to control the particle density as well as it features prevalent particle isolation in the resulting distribution, with a particle separation

• much larger than the size of the irradiation beam. In order to image the expected near field structure upon surface illumination a sample consisting of 40-nm-thick, face-centered-cubic (fcc) polycrystalline Ge2Sb2Te5 (GST) on a Si(001) substrate covered by a 10-nm-thick amorphous SiO2 film was used

Imaging ultra thin layers with helium ion microscopy: Utilizing the channeling contrast mechanism

• Gregor Hlawacek,
• Vasilisa Veligura,
• Stefan Lorbek,
• Tijs F. Mocking,
• Antony George,
• Raoul van Gastel,
• Harold J. W. Zandvliet and
• Bene Poelsema

Beilstein J. Nanotechnol. 2012, 3, 507–512, doi:10.3762/bjnano.3.58

• of 4 μm of (3-mercaptopropyl)trimethoxysilane (MS, C6H16O3SSi) and triethoxy(1H,1H,2H,2H-tridecafluoro-n-octyl)silane (PFS, C14H19F13O3Si) were formed on the native oxide present on Si{001} wafers [7]. The thickness of the layers corresponds to the length of the molecules, which are 7 Å and 11 Å for

• MS and PFS, respectively. para-Sexiphenyl (6P) thin films were grown on Si{001} wafers covered by a native oxide in an UHV system with a base pressure of 1 × 10−10 mbar. Prior to thin-film growth the substrate was flashed to 500 °C. 6P was deposited at room temperature from a Knudsen cell [8][9]. For

• single-layer high (≈2.6 nm) 6P islands on native-oxide-covered Si{001} wafers are shown [8][9]. Figure 2a is an ET image of such an island. The FoV is 11 μm, the PE was 20 keV and an ion dose of 3.21 × 1015 cm−2 was used. The ramified shape of the island (dark) is clearly visible against the bright

Direct-write polymer nanolithography in ultra-high vacuum

• Woo-Kyung Lee,
• Minchul Yang,
• Arnaldo R. Laracuente,
• William P. King,
• Lloyd J. Whitman and
• Paul E. Sheehan

Beilstein J. Nanotechnol. 2012, 3, 52–56, doi:10.3762/bjnano.3.6

• tip temperature was fixed in UHV to limit the number of experimental parameters. Polymer nanostructures were also written on atomically clean and flat Si(001)-2×1 (Figure 4) where monoatomic steps are clearly visible. Interestingly, we found that surface chemistry of the silicon substrate had a major

• under ambient conditions [18]. The upright orientation is due to the hydrophobic alkyl side chains minimizing their exposure to the hydrophilic oxide substrate. In contrast, PDDT written on Si(001)-2×1 has a film thickness of ~0.4 nm, corresponding to polymer side-chains oriented parallel to the surface

• develop polymer-based electronics compatible with inorganic semiconductor technology. Experimental The silicon wafer substrates were prepared using one of two protocols. In both protocols, substrates for depositing PDDT were scribed from Sb-doped Si(001) wafers (0.01 to 0.02 Ω·cm) oriented to within 0.1

Effect of the tip state during qPlus noncontact atomic force microscopy of Si(100) at 5 K: Probing the probe

• Adam Sweetman,
• Sam Jarvis,
• Rosanna Danza and
• Philip Moriarty

Beilstein J. Nanotechnol. 2012, 3, 25–32, doi:10.3762/bjnano.3.3

• ; noncontact AFM; qPlus; Si(001); Si(100); tip (apex) structure; Introduction It is now generally accepted that atomic resolution in NC-AFM imaging on semiconducting surfaces is due to the chemical force between the atoms of the surface and the last few atoms of the tip apex [1][2][3][4]. Even with well

Preparation and characterization of supported magnetic nanoparticles prepared by reverse micelles

• Ulf Wiedwald,
• Luyang Han,
• Johannes Biskupek,
• Ute Kaiser and
• Paul Ziemann

Beilstein J. Nanotechnol. 2010, 1, 24–47, doi:10.3762/bjnano.1.5