Hierarchically structured nanoporous carbon tubes for high pressure carbon dioxide adsorption

• Julia Patzsch,
• Deepu J. Babu and
• Jörg J. Schneider

Beilstein J. Nanotechnol. 2017, 8, 1135–1144, doi:10.3762/bjnano.8.115

• attractive as a potential material for catalysis and electronic and photonic devices due to its semiconducting nature with a wide band gap, excellent mechanical properties, chemical inertness and thermal conductivity [13][14][15][16][17]. Especially, one-dimensional SiC in the form of nanowires or nanorods

• show outstanding elasticity and mechanical strength. A Young’s modulus of 600 GPa was measured for SiC wires [18][19]. Different templating methods were used for structuring such as the two-step synthesis using preceramic polymers as precursors (e.g., polycarbosilanes) [13][20][21], carbo-thermal

• reduction at high temperatures (≈1300 °C) [22][23] or magnesio-thermic reduction at moderate temperatures (≈700 °C) [24]. Following these approaches, SiC nanotubes were successfully synthesized by reaction with CNTs [25][26], with porous aerogels [27], fibres [28], and ordered mesoporous SiC structures

Relationships between chemical structure, mechanical properties and materials processing in nanopatterned organosilicate fins

• Gheorghe Stan,
• Richard S. Gates,
• Qichi Hu,
• Kevin Kjoller,
• Craig Prater,
• Kanwal Jit Singh,
• Ebony Mays and
• Sean W. King

Beilstein J. Nanotechnol. 2017, 8, 863–871, doi:10.3762/bjnano.8.88

• structure of the organosilicate fins induced by the patterning process, AFM-IR was used to focus specifically on relative changes in absorbance for the symmetric SiC–H3 deformation mode at about 1270 cm−1. This correlates directly with the concentration of terminal CH3 groups present in the nanoporous

• interconnectivity. Numerous additional blanket/unpatterned film studies have shown a direct correlation between the concentration of such terminal organic groups and porosity and mechanical properties [45][46]. Figure 2a presents AFM-IR spectra of the symmetric SiC–H3 deformation band collected from both the 20, 90

• spectra in Figure 2a were all scaled/normalized to have the same absorbance for the Si–O–Si stretching band at 1050 cm−1 (not shown in order for the relative changes in the lower absorbance SiC–H3 deformation band to be more easily observed). As can be seen, the absorbance for the SiC–H3 deformation band

Nitrogen-doped twisted graphene grown on copper by atmospheric pressure CVD from a decane precursor

• Ivan V. Komissarov,
• Nikolai G. Kovalchuk,
• Vladimir A. Labunov,
• Ksenia V. Girel,
• Olga V. Korolik,
• Mikhail S. Tivanov,
• Algirdas Lazauskas,
• Mindaugas Andrulevičius,
• Tomas Tamulevičius,
• Viktoras Grigaliūnas,
• Šarunas Meškinis,
• Sigitas Tamulevičius and
• Serghej L. Prischepa

Beilstein J. Nanotechnol. 2017, 8, 145–158, doi:10.3762/bjnano.8.15

• from both fundamental and applied aspects. TG can be obtained by different methods, e.g., by means of graphene folding, graphene layer stacking, thermal decomposition of SiC [9] or chemical vapor deposition (CVD) on metal catalysts [10][11]. Generally speaking, CVD is one of the most common methods to

• 284.83 eV for graphene on SiC [34][35][36]. This variation of the sp2C peak position is usually explained by the charge transfer phenomena that take place in the substrate–graphene system [37]. Since both samples were deposited on the same substrate, we expect the same impact of the charge transfer on

The difference in the thermal conductivity of nanofluids measured by different methods and its rationalization

• Aparna Zagabathuni,
• Sudipto Ghosh and
• Shyamal Kumar Pabi

Beilstein J. Nanotechnol. 2016, 7, 2037–2044, doi:10.3762/bjnano.7.194

• Al2O3 nanoparticle loading and particle size. Lee et al. [25] have investigated the thermal conductivity of Al2O3, SiC, Ni, ZnO and multiwalled carbon nanotubes (MWCNTs) in liquid gallium using LFM. They reported that the thermal conductivity measured by LFM was not accurate because of the uncertainty

Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals

• Ivan Shtepliuk,
• Jens Eriksson,
• Volodymyr Khranovskyy,
• Tihomir Iakimov,
• Anita Lloyd Spetz and
• Rositsa Yakimova

Beilstein J. Nanotechnol. 2016, 7, 1800–1814, doi:10.3762/bjnano.7.173

• graphene on silicon carbide is fabricated by thermal decomposition of a Si-face 4H-SiC wafer in argon atmosphere. Current–voltage characteristics of the graphene/SiC Schottky junction were analyzed by applying the thermionic-emission theory. Extracted values of the Schottky barrier height and the ideality

• behaviour and a good quality of ohmic palladium–graphene contacts. Keeping in mind the strong sensitivity of graphene to analytes we propose the possibility to use the graphene/SiC Schottky diode as a sensing platform for the recognition of toxic heavy metals. Using density functional theory (DFT

• ) calculations we gain insight into the nature of the interaction of cadmium, mercury and lead with graphene as well as estimate the work function and the Schottky barrier height of the graphene/SiC structure before and after applying heavy metals to the sensing material. A shift of the I–V characteristics of

Localized surface plasmons in structures with linear Au nanoantennas on a SiO₂/Si surface

• Ilya A. Milekhin,
• Sergei A. Kuznetsov,
• Ekaterina E. Rodyakina,
• Alexander G. Milekhin,
• Alexander V. Latyshev and
• Dietrich R. T. Zahn

Beilstein J. Nanotechnol. 2016, 7, 1519–1526, doi:10.3762/bjnano.7.145

• plasmon–phonon coupling are to be expected. Indeed, as it was is shown in [31], such a coupling may drastically increase (by a factor of 200) the scattering intensity in the near field of the metal (Pt) tip of an atomic force microscope at frequencies of the SiC surface optical (SO) phonons. The results

• measured in the frequency range of 600–4500 cm−1 by means of the FTIR spectrometer Bruker IFS-113v. The spectrometer provided the spectral resolution of 4 cm−1 and was combined with an IR microscope enabling to focus the infrared radiation to a spot with a diameter of 100 µm. A globar (SiC) was utilized as

Manufacturing and investigation of physical properties of polyacrylonitrile nanofibre composites with SiO₂, TiO₂ and Bi₂O₃ nanoparticles

• Tomasz Tański,
• Wiktor Matysiak and
• Barbara Hajduk

Beilstein J. Nanotechnol. 2016, 7, 1141–1155, doi:10.3762/bjnano.7.106

• ][4][5][6], metals (Au, Ag, Al, Fe) [7][8][9], SiC [10] and clays (saponite, montmorillonite, hectorite) [11][12][13]. In nanocomposites, which use inorganic materials at the nano-scale as reinforcement, there is a significant enhancement of properties with a much lower fraction of the reinforcing

Advanced atomic force microscopy techniques III

• Thilo Glatzel and
• Thomas Schimmel

Beilstein J. Nanotechnol. 2016, 7, 1052–1054, doi:10.3762/bjnano.7.98

• surfaces [33], and combined STM and AFM measurements on single-layer graphene on SiC(0001) [34] have been investigated, discussed, and presented. Another combined STM-AFM study determines very accurately the probe-nanocrystal interaction potential [35]. Finally, enhanced information can also be achieved by

Selective photocatalytic reduction of CO₂ to methanol in CuO-loaded NaTaO₃ nanocubes in isopropanol

• Tianyu Xiang,
• Feng Xin,
• Jingshuai Chen,
• Yuwen Wang,
• Xiaohong Yin and
• Xiao Shao

Beilstein J. Nanotechnol. 2016, 7, 776–783, doi:10.3762/bjnano.7.69

• SiC), producing CH3OH, HCOOH, HCHO and trace amounts of CH4. In the 1990s, Ta oxide photocatalysts began to draw attention in the field of water splitting. A series of Ta catalysts, such as LiTaO3 [9], NaTaO3 [10], KTaO3 [11], AgTaO3 [12], CaTa2O6 [13], SrTa2O6 [13], KBa2Ta3O10 [14], were proved to

Synthesis and applications of carbon nanomaterials for energy generation and storage

• Marco Notarianni,
• Jinzhang Liu,
• Kristy Vernon and
• Nunzio Motta

Beilstein J. Nanotechnol. 2016, 7, 149–196, doi:10.3762/bjnano.7.17

• graphene oxide CVD Synthesis on SiC Each of these methods has its advantages and disadvantages in terms of quality, yield production and applications, as summarized in Table 1. In particular, mechanical exfoliation most likely produces the best samples in terms of charge carrier mobility but is probably

• applications. However, the breakthrough that would make this technology viable for large scale production would be to develop a low temperature CVD process (e.g., plasma-enhanced CVD) that could produce large area, high quality graphene on any type of substrate. Epitaxial growth on SiC. Graphene growth on

• silicon carbide (SiC) has also been extensively explored as it results in wafer-scale growth. Additionally, SiC is an excellent substrate for many electronics applications, avoiding the need to transfer to another substrate. High-quality graphene with a controlled thickness and a specific crystallographic

Large area scanning probe microscope in ultra-high vacuum demonstrated for electrostatic force measurements on high-voltage devices

• Urs Gysin,
• Thilo Glatzel,
• Thomas Schmölzer,
• Adolf Schöner,
• Sergey Reshanov,
• Holger Bartolf and
• Ernst Meyer

Beilstein J. Nanotechnol. 2015, 6, 2485–2497, doi:10.3762/bjnano.6.258

• the benefit of surface photo voltage measurements, we analysed the contact potential difference of a silicon carbide p/n-junction under illumination. Keywords: copper alloy; electrostatic force microscopy; high-voltage device; Kelvin probe force microscopy; silicon carbide (SiC); surface photo

• remove the oxide layer. Second, two different silicon carbide (SiC) devices are analysed and discussed. A calibration layer structure containing precisely defined p/n-interfaces is used to elaborate the challenges associated to KPFM and SPV measurements on semiconducting surfaces. Furthermore, a complex

• SiC structure of a power semiconductor device is observed by means of large area KPFM measurements. The structure is a junction barrier Schottky (JBS) rectifier-architecture [26]. We observe the termination region of the device, where highly doped p+-rings are embedded into a large p-type ring. These

Graphene on SiC(0001) inspected by dynamic atomic force microscopy at room temperature

• Mykola Telychko,
• Jan Berger,
• Zsolt Majzik,
• Pavel Jelínek and
• Martin Švec

Beilstein J. Nanotechnol. 2015, 6, 901–906, doi:10.3762/bjnano.6.93

• Physical Electronics, Faculty of Nuclear Sciences and Physical Engineering, Czech Technical University in Prague, Břehová 7, CZ-11519 Prague, Czech Republic 10.3762/bjnano.6.93 Abstract We investigated single-layer graphene on SiC(0001) by atomic force and tunneling current microscopy, to separate the

• accompanied by any out-of-plane relaxations of carbon atoms. Keywords: AFM; electron scattering; graphene; SiC; STM; Introduction Graphene epitaxially grown on a substrate differs in many aspects from free-standing graphene or graphene exfoliated onto insulating surfaces. The influence of the substrate

• hinders applications of epitaxial graphene in the nanoelectronics [1]. The two main methods of epitaxial graphene growth are chemical vapor deposition (CVD) on metal surfaces [2] and annealing of silicon carbide (SiC) [3]. The large conductivity of metal substrates leaves graphene on metals as model-only

Low-cost formation of bulk and localized polymer-derived carbon nanodomains from polydimethylsiloxane

• Juan Carlos Castro Alcántara,
• Mariana Cerda Zorrilla,
• Lucia Cabriales,
• Luis Manuel León Rossano and
• Mathieu Hautefeuille

Beilstein J. Nanotechnol. 2015, 6, 744–748, doi:10.3762/bjnano.6.76

• may then be obtained according to the desired application and nanodomains such as carbon nanotubes and nanowires, silicon carbide (SiC) and SiC/SiO2 nanofibres have also been recently produced [2][3]. Typically, the use of special fillers and high temperatures of 1000 °C or greater are critical for

Electroburning of few-layer graphene flakes, epitaxial graphene, and turbostratic graphene discs in air and under vacuum

• Andrea Candini,
• Nils Richter,
• Domenica Convertino,
• Camilla Coletti,
• Franck Balestro,
• Wolfgang Wernsdorfer,
• Mathias Kläui and
• Marco Affronte

Beilstein J. Nanotechnol. 2015, 6, 711–719, doi:10.3762/bjnano.6.72

• the C-face of SiC and turbostratic graphene discs deposited on SiO2) under air and vacuum conditions. The EB process is found to depend on both the graphene type and on the ambient conditions. For the mechanically exfoliated graphene, performing EB under vacuum leads to a higher yield of nanometer-gap

• formation than working in air. Conversely, for graphene on SiC the EB process is not successful under vacuum. Finally, the EB is possible with turbostratic graphene discs only after the creation of a constriction in the sample using lithographic patterning. Keywords: graphene; graphene based electrodes

• process (in air and under vacuum) also on other types of few-layer graphene, which are better suited for large scale integration, namely multilayer graphene grown on the C-face of SiC [23] and thin discs of turbostratically stacked graphene [24][25]. Results Mechanically exfoliated few-layer graphene We

X-ray photoelectron spectroscopy of graphitic carbon nanomaterials doped with heteroatoms

• Toma Susi,
• Thomas Pichler and
• Paola Ayala

Beilstein J. Nanotechnol. 2015, 6, 177–192, doi:10.3762/bjnano.6.17

• the Fermi level shift via ARPES [87]. After intercalating hydrogen between the SiC substrate and monolayer graphene, a value of 284.6 eV has been reported [75]. As graphene is commonly grown by chemical vapor deposition on catalytic metals, several XPS measurements on metal surfaces are available

Materials and characterization techniques for high-temperature polymer electrolyte membrane fuel cells

• Roswitha Zeis

Beilstein J. Nanotechnol. 2015, 6, 68–83, doi:10.3762/bjnano.6.8

• based on phosphoric-acid-doped polybenzimidazole membranes shares many common features with the classical phosphoric acid fuel cell (PAFC), which also utilizes phosphoric acid as the electrolyte. Unlike the electrolyte system used in a PAFC, silicon carbide (SiC) soaked in acid, the acid-doped PBI

Advanced atomic force microscopy techniques II

• Thilo Glatzel,
• Ricardo Garcia and
• Thomas Schimmel

Beilstein J. Nanotechnol. 2014, 5, 2326–2327, doi:10.3762/bjnano.5.241

• batteries for a comparison of their nanoscale electrical, electrochemical, and morphological properties [6] or the analysis of CdS quantum dots on TiO2 by a combination of AFM and X-ray photoelectron spectroscopy [7]. The folding and rupture of graphene on SiC analyzed by non-contact AFM and Kelvin probe

Nanometer-resolved mechanical properties around GaN crystal surface steps

• Jörg Buchwald,
• Marina Sarmanova,
• Bernd Rauschenbach and
• Stefan G. Mayr

Beilstein J. Nanotechnol. 2014, 5, 2164–2170, doi:10.3762/bjnano.5.225

• films were undertaken. CR-AFM is a technique for evaluating the mechanical properties of a broad range of materials while using one of the highest lateral resolution available, compared to other recent methods [1][2][22][23]. The investigated sample was an epitaxial c-plane GaN film grown on a 6H-SiC

Cathode lens spectromicroscopy: methodology and applications

• T. O. Menteş,
• G. Zamborlini,
• A. Sala and
• A. Locatelli

Beilstein J. Nanotechnol. 2014, 5, 1873–1886, doi:10.3762/bjnano.5.198

• SiC substrates [57]. In many studies μ-ARPES was employed to access the π-band of graphene, to quantify the doping in graphene and to verify the strength of the film–substrate interaction. At length scales below the resolution of the μ-probe approach, the recently introduced dark-field XPEEM method is

Electronic and electrochemical doping of graphene by surface adsorbates

• Hugo Pinto and
• Alexander Markevich

Beilstein J. Nanotechnol. 2014, 5, 1842–1848, doi:10.3762/bjnano.5.195

• ) with holes by metal atoms with high electron affinity such as bismuth, antimony and gold. In the case of doping with bismuth and antimony the electron extraction from graphene only reduced the natural intrinsic n-type character of EG on SiC while gold actually shifted the Dirac point above the Fermi

Core level binding energies of functionalized and defective graphene

• Toma Susi,
• Markus Kaukonen,
• Paula Havu,
• Mathias P. Ljungberg,
• Paola Ayala and
• Esko I. Kauppinen

Beilstein J. Nanotechnol. 2014, 5, 121–132, doi:10.3762/bjnano.5.12

• grown. Some authors have measured the C 1s of epitaxial monolayered graphene at a slightly higher value of 284.8 eV, but attribute this to a charge transfer from the SiC substrate [25]. A similar shift has been observed for the Dirac point in this system by angle-resolved photoemission spectroscopy [26

Challenges in realizing ultraflat materials surfaces

• Takashi Yatsui,
• Wataru Nomura,
• Fabrice Stehlin,
• Olivier Soppera,
• Makoto Naruse and
• Motoichi Ohtsu

Beilstein J. Nanotechnol. 2013, 4, 875–885, doi:10.3762/bjnano.4.99

• such rare-earth materials [8]. To reduce the usage of the CeO2, many groups have attempted to develop alternative polishing pads [9] and slurries [10]. Watanabe et al. developed a surface treatment for SiC and diamond that uses a photocatalytic effect [11]. To induce this photocatalytic effect, they

Routes to rupture and folding of graphene on rough 6H-SiC(0001) and their identification

• M. Temmen,
• O. Ochedowski,
• B. Kleine Bussmann,
• M. Schleberger,
• M. Reichling and
• T. R. J. Bollmann

Beilstein J. Nanotechnol. 2013, 4, 625–631, doi:10.3762/bjnano.4.69

• mechanically exfoliated under ambient conditions on 6H-SiC(0001) are modified by (i) swift heavy ion (SHI) irradiation, (ii) by a force microscope tip and (iii) by severe heating. The resulting surface topography and the surface potential are investigated with non-contact atomic force microscopy (NC-AFM) and

• ) measured by KPFM. Keywords: graphene; Kelvin probe force microscopy (KPFM), local contact potential difference (LCPD); non-contact atomic force microscopy (NC-AFM); SiC; Introduction Since its discovery in 2004 [1], graphene, the 2D crystal with a honeycomb lattice of sp2-bonded carbon atoms, has been

• various ways. The growth of graphene on metals followed by transfer to another substrate as well as epitaxial growth on SiC, both have a potential for mass production if technological shortcomings can be overcome. However, exfoliation from graphite still results in graphene flakes of highest quality [1][2

High-resolution electrical and chemical characterization of nm-scale organic and inorganic devices

• Pierre Eyben

Beilstein J. Nanotechnol. 2013, 4, 318–319, doi:10.3762/bjnano.4.35

• technology has exhibited some fundamental limitations in tackling the increasingly challenging issues of miniaturization and improvements in processing speed and power consumption. Hence, new inorganic semiconductor materials (Ge, InGaAs, InP, InSb, GaN, GaSb, SiC, etc.) and new architectures (multiple-gate

A look underneath the SiO₂/4H-SiC interface after N₂O thermal treatments

• Patrick Fiorenza,
• Filippo Giannazzo,
• Lukas K. Swanson,
• Alessia Frazzetto,
• Simona Lorenti,
• Mario S. Alessandrino and
• Fabrizio Roccaforte

Beilstein J. Nanotechnol. 2013, 4, 249–254, doi:10.3762/bjnano.4.26

• di Catania - Università degli Studi di Catania, Via Valdisavoia 9, 95123, Catania, Italy STMicroelectronics, Stadale Primosole 50, 95121, Catania, Italy 10.3762/bjnano.4.26 Abstract The electrical compensation effect of the nitrogen incorporation at the SiO2/4H-SiC (p-type) interface after thermal

• treatments in ambient N2O is investigated employing both scanning spreading resistance microscopy (SSRM) and scanning capacitance microscopy (SCM). SSRM measurements on p-type 4H-SiC areas selectively exposed to N2O at 1150 °C showed an increased resistance compared to the unexposed ones; this indicates the

• incorporation of electrically active nitrogen-related donors, which compensate the p-type doping in the SiC surface region. Cross-sectional SCM measurements on SiO2/4H-SiC metal/oxide/semiconductor (MOS) devices highlighted different active carrier concentration profiles in the first 10 nm underneath the