Optimizing PMMA solutions to suppress contamination in the transfer of CVD graphene for batch production

• Chun-Da Liao,
• Andrea Capasso,
• Tiago Queirós,
• Telma Domingues,
• Fatima Cerqueira,
• Nicoleta Nicoara,
• Jérôme Borme,
• Paulo Freitas and
• Pedro Alpuim

Beilstein J. Nanotechnol. 2022, 13, 796–806, doi:10.3762/bjnano.13.70

• to the surface of the chips. A stopping layer (Cu/AlSiCu/TiW) for the reactive ion etching (RIE) process was sputtered, and the SiO2/SiNx multistack passivation layer was deposited by CVD. The passivation layer was patterned by lithography and etched by RIE until revealing the stopping layer on the

Hexagonal boron nitride: a review of the emerging material platform for single-photon sources and the spin–photon interface

• Stefania Castelletto,
• Faraz A. Inam,
• Shin-ichiro Sato and
• Alberto Boretti

Beilstein J. Nanotechnol. 2020, 11, 740–769, doi:10.3762/bjnano.11.61

Optimization of the optical coupling in nanowire-based integrated photonic platforms by FDTD simulation

• Nan Guan,
• Andrey Babichev,
• Martin Foldyna,
• Dmitry Denisov,
• François H. Julien and
• Maria Tchernycheva

Beilstein J. Nanotechnol. 2018, 9, 2248–2254, doi:10.3762/bjnano.9.209

• photonic-crystal waveguide [28]. The authors integrated LEDs on top of a SiNx membrane photonic crystal and deposited electrical contacts. The photonic crystal waveguide was shown to efficiently guide the electroluminescence over a distance of about 20 µm. Brubaker et al. realized on-chip optical coupling

• expected to improve the LED–detector coupling efficiency. Recently, an integrated photonic platform consisting of an InGaN/GaN NW LED and a p–n NW photodiode interconnected with a SiNx waveguide was demonstrated [30]. The communication took place in the visible spectral range (λ ≈ 400 nm). This platform

• combined all the basic building blocks of the optical circuit: emitter, coupling waveguide, and photodetector. However, the waveguide was not optimized. The platform used a multimode SiNx beam with a weak coupling to the active components. The reported coupling yield between the LED and the photodiode was

Fabrication and properties of luminescence polymer composites with erbium/ytterbium oxides and gold nanoparticles

• Julia A. Burunkova,
• Ihor Yu. Denisiuk,
• Dmitri I. Zhuk,
• Lajos Daroczi,
• Attila Csik,
• István Csarnovics and
• Sándor Kokenyesi

Beilstein J. Nanotechnol. 2016, 7, 630–636, doi:10.3762/bjnano.7.55

• telecommunication window at 1.54 µm, as well as for efficient optical amplification elements. For example, silicon oxides (SiOx) and silicon nitrides (SiNx) doped with Er can be integrated in a metal-oxide-semiconductor structure and used as infrared light sources or amplifiers in telecommunication systems [1

Effect of SiN_x diffusion barrier thickness on the structural properties and photocatalytic activity of TiO₂ films obtained by sol–gel dip coating and reactive magnetron sputtering

• Mohamed Nawfal Ghazzal,
• Eric Aubry,
• Nouari Chaoui and
• Didier Robert

Beilstein J. Nanotechnol. 2015, 6, 2039–2045, doi:10.3762/bjnano.6.207

• effect of the thickness of the silicon nitride (SiNx) diffusion barrier on the structural and photocatalytic efficiency of TiO2 films obtained with different processes. We show that the structural and photocatalytic efficiency of TiO2 films produced using soft chemistry (sol–gel) and physical methods

• (reactive sputtering) are affected differentially by the intercalating SiNx diffusion barrier. Increasing the thickness of the SiNx diffusion barrier induced a gradual decrease of the crystallite size of TiO2 films obtained by the sol–gel process. However, TiO2 obtained using the reactive sputtering method

• showed no dependence on the thickness of the SiNx barrier diffusion. The SiNx barrier diffusion showed a beneficial effect on the photocatalytic efficiency of TiO2 films regardless of the synthesis method used. The proposed mechanism leading to the improvement in the photocatalytic efficiency of the TiO2

Electron-stimulated purification of platinum nanostructures grown via focused electron beam induced deposition

• Brett B. Lewis,
• Michael G. Stanford,
• Jason D. Fowlkes,
• Kevin Lester,
• Harald Plank and
• Philip D. Rack

Beilstein J. Nanotechnol. 2015, 6, 907–918, doi:10.3762/bjnano.6.94

• with progressive carbon reduction. Figure 6a illustrates initial EDS measurements of ca. 30 nm thick PtC5 samples that were grown on SiNx membranes confirming the decrease in carbon with increasing purification time. Interestingly, the carbon reduction is not as severe as compared to samples done on

• microstructure and grain size of progressively purified material, six samples were prepared on 30 nm thick SiNx substrates for transmission electron microscopy (TEM) imaging. The samples were deposited and purified using similar parameters reported above. The samples were purified to different times (and doses

Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement

• Cathy Bugot,
• Nathanaëlle Schneider,
• Daniel Lincot and
• Frédérique Donsanti

Beilstein J. Nanotechnol. 2013, 4, 750–757, doi:10.3762/bjnano.4.85

• generated, has been the key for the development of fast thin-film deposition processes at low temperature. It is widely used to enhance the thin-film deposition of materials such as Al2O3, ZnO, Ta2O5, TiN, TaN and SiNx [19]. In this study, ALD and PEALD have been used to synthesize In2(S,O)3 thin films and