Geometrical optimisation of core–shell nanowire arrays for enhanced absorption in thin crystalline silicon heterojunction solar cells

• Robin Vismara,
• Olindo Isabella,
• Andrea Ingenito,
• Fai Tong Si and
• Miro Zeman

Beilstein J. Nanotechnol. 2019, 10, 322–331, doi:10.3762/bjnano.10.31

• vacuum mask with a 3 mm × 3 mm aperture area, was used to measure the current–voltage characteristics of the fabricated solar cells. The simulator consists of a xenon and a halogen lamp that closely reproduce the spectrum and the intensity of the AM1.5 spectrum [43], which was verified with a c-Si device

Amorphous Ni_xCo_yP-supported TiO₂ nanotube arrays as an efficient hydrogen evolution reaction electrocatalyst in acidic solution

• Yong Li,
• Peng Yang,
• Bin Wang and
• Zhongqing Liu

Beilstein J. Nanotechnol. 2019, 10, 62–70, doi:10.3762/bjnano.10.6

• spectra of the samples. (a) Current–voltage characteristic plots and (b) Tafel plots of the samples. (c) Current–voltage characteristics during durability tests and (d) bath voltages at various current densities for the two-electrode system with NixCoyP/TNAs as a cathode. Cyclic voltammograms of (a) TNAs

Near-infrared light harvesting of upconverting NaYF₄:Yb³⁺/Er³⁺-based amorphous silicon solar cells investigated by an optical filter

• Daiming Liu,
• Qingkang Wang and
• Qing Wang

Beilstein J. Nanotechnol. 2018, 9, 2788–2793, doi:10.3762/bjnano.9.260

• measurements was 60 mW. Optical spectra were recorded using a UV–vis–NIR spectrophotometer (Lambda 750S, PerkinElmer) with an integrating sphere (60 mm) attachment. Current–voltage curves were measured by using a solar simulator under standard test conditions (AM1.5, 100 mW/cm2 and 25 °C). EQE curves were

• reaction time. (c) energy transfer mechanisms for the Yb3+–Er3+ couple under 980 nm laser illumination. (a) FE-SEM images showing the multiple layers of a-Si:H solar cell; (b) current–voltage and (c) EQE curves of a-Si:H solar cell under AM1.5 solar irradiation. (d) transmittance spectrum of a-Si:H solar

• cell without reflector in 370–1100 nm; (e) transmittance spectrum of the optical filter and the inset optical photograph. (a) Current–voltage curves and (b) EQE curves of an a-Si:H solar cell with an UC layer compared with the bare cell under AM1.5 solar irradiation through the optical filter. Inset in

Contactless photomagnetoelectric investigations of 2D semiconductors

• Marian Nowak,
• Marcin Jesionek,
• Barbara Solecka,
• Piotr Szperlich,
• Piotr Duka and
• Anna Starczewska

Beilstein J. Nanotechnol. 2018, 9, 2741–2749, doi:10.3762/bjnano.9.256

• electrostatically tunable carrier density, a 150 nm thick Au film was also deposited on the back surface of the PET foil. The current–voltage characteristics were recorded using a Keithley 6221 DC current source, Keithley 196 digital multimeter, and a Keithley 705 scanner. The measurements were carried out in

Exploring the photoleakage current and photoinduced negative bias instability in amorphous InGaZnO thin-film transistors with various active layer thicknesses

• Dapeng Wang and
• Mamoru Furuta

Beilstein J. Nanotechnol. 2018, 9, 2573–2580, doi:10.3762/bjnano.9.239

• visible light irradiation exceeded ≈2.7 eV. Furthermore, the influence of the TIGZO on NBIS-induced instability in a-IGZO TFTs was explored by the combination of current–voltage measurements in double-sweeping VGS mode and capacitance–voltage measurements. The NBIS-induced hysteresis was quantitatively

• explored by combining the current–voltage (I–V) measurements in double-sweeping VGS mode and capacitance–voltage (C–V) measurements. The NBIS-induced hysteresis was quantitatively analyzed using a positive gate pulse mode. The I–V and C–V results revealed that the trapped holes at the etch-stopper/IGZO

High-temperature magnetism and microstructure of a semiconducting ferromagnetic (GaSb)_1−x(MnSb)_x alloy

• Leonid N. Oveshnikov,
• Elena I. Nekhaeva,
• Alexey V. Kochura,
• Alexander B. Davydov,
• Mikhail A. Shakhov,
• Sergey F. Marenkin,
• Oleg A. Novodvorskii,
• Alexander P. Kuzmenko,
• Alexander L. Vasiliev,
• Boris A. Aronzon and
• Erkki Lahderanta

Beilstein J. Nanotechnol. 2018, 9, 2457–2465, doi:10.3762/bjnano.9.230

• samples demonstrated linear current–voltage characteristics down to sub-helium temperatures while sustaining high values of conductivity. The cross-section specimens for S/TEM studies were prepared by focus ion beam (FIB) milling in a Helios (FEI, US) SEM/FIB dual-beam system equipped with C and Pt gas

Magnetism and magnetoresistance of single Ni–Cu alloy nanowires

• Andreea Costas,
• Camelia Florica,
• Elena Matei,
• Maria Eugenia Toimil-Molares,
• Ionel Stavarache,
• Andrei Kuncser,
• Victor Kuncser and
• Ionut Enculescu

Beilstein J. Nanotechnol. 2018, 9, 2345–2355, doi:10.3762/bjnano.9.219

• using a system composed of a closed-cycle He cryostat (Janis SHI-4ST-1; 4–300K), LakeShore electromagnet EM4-HVA (2.5 T) with power supply 642 (0–70 A, 35 V), temperature controller LakeShore 331S, LakeShore DSP 475 Gauss meter, Keithley 2612A current/voltage source, Keithley 6517A multimeter and vacuum

Lead-free hybrid perovskites for photovoltaics

• Oleksandr Stroyuk

Beilstein J. Nanotechnol. 2018, 9, 2209–2235, doi:10.3762/bjnano.9.207

Spin-coated planar Sb₂S₃ hybrid solar cells approaching 5% efficiency

• Pascal Kaienburg,
• Benjamin Klingebiel and
• Thomas Kirchartz

Beilstein J. Nanotechnol. 2018, 9, 2114–2124, doi:10.3762/bjnano.9.200

• atmosphere by mounting the samples (while still inside a glovebox) in a closed holder with glass window. Current–voltage curves were performed with an AM1.5 spectrum on a grade AAA Solar Simulator. No masks were used for solar simulator measurements since the Jsc values were obtained from EQE measurements

Direct AFM-based nanoscale mapping and tomography of open-circuit voltages for photovoltaics

• Katherine Atamanuk,
• Justin Luria and
• Bryan D. Huey

Beilstein J. Nanotechnol. 2018, 9, 1802–1808, doi:10.3762/bjnano.9.171

• , functionality, and widespread benefits of PV devices, such as solar cells. To extract such PV metrics at the nanoscale, for instance with standard 256 × 256 pixel resolution, over 65000 distinct current–voltage spectra must be acquired and analyzed. We previously developed an efficient, method with high spatial

Nanoscale electrochemical response of lithium-ion cathodes: a combined study using C-AFM and SIMS

• Jonathan Op de Beeck,
• Nouha Labyedh,
• Alfonso Sepúlveda,
• Valentina Spampinato,
• Alexis Franquet,
• Thierry Conard,
• Philippe M. Vereecken,
• Wilfried Vandervorst and
• Umberto Celano

Beilstein J. Nanotechnol. 2018, 9, 1623–1628, doi:10.3762/bjnano.9.154

• chemistry, which is an important (missing) piece of information. For this reason, inspired by the work of E. Strelcov et al. [10] on the first-order reversal curve current–voltage (FORC-IV) method on ferroelectrics, we will investigate the fundamentals behind tip-induced sensing in Li-ion cathodes using a

Light extraction efficiency enhancement of flip-chip blue light-emitting diodes by anodic aluminum oxide

• Yi-Ru Huang,
• Yao-Ching Chiu,
• Kuan-Chieh Huang,
• Shao-Ying Ting,
• Po-Jui Chiang,
• Chih-Ming Lai,
• Chun-Ping Jen,
• Snow H. Tseng and
• Hsiang-Chen Wang

Beilstein J. Nanotechnol. 2018, 9, 1602–1612, doi:10.3762/bjnano.9.152

• typical light output power–current–voltage (L–I–V) characteristics of the LEDs with and without AAO structures. The AAO structures enhance the LEE of LEDs but do not change the L–I–V properties. Rigorous coupled-wave analysis We used the rigorous coupled-wave analysis (RCWA) to verify our hypothesis and

• electroluminescence (AREL) spectra of samples FC-BLED and AAO70. Angular resolution of LEE enhancement of (b) AAO60, (c) AAO70, and (d) AAO80. Typical light output power–current–voltage (L–I–V) curves of the samples in this study. Sample structure used in rigorous coupled-wave analysis (RCWA) calculations: (a) AAO

Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride

• Daniel Hiller,
• Julian López-Vidrier,
• Keita Nomoto,
• Michael Wahl,
• Wolfgang Bock,
• Tomáš Chlouba,
• František Trojánek,
• Sebastian Gutsch,
• Margit Zacharias,
• Dirk König,
• Petr Malý and
• Michael Kopnarski

Beilstein J. Nanotechnol. 2018, 9, 1501–1511, doi:10.3762/bjnano.9.141

• , which allows for completely N-free silicon oxide. In this work, we investigate the properties of B- and P-incorporating Si NCs embedded in pure silicon oxide compared to silicon oxynitride by atom probe tomography (APT), low-temperature photoluminescence (PL), transient transmission (TT), and current

• –voltage (I–V) measurements. The results clearly show that no free carriers, neither from P- nor from B-doping, exist in the Si NCs, although in some configurations charge carriers can be generated by electric field ionization. The absence of free carriers in Si NCs ≤5 nm in diameter despite the presence

A novel copper precursor for electron beam induced deposition

• Caspar Haverkamp,
• George Sarau,
• Mikhail N. Polyakov,
• Ivo Utke,
• Marcos V. Puydinger dos Santos,
• Silke Christiansen and
• Katja Höflich

Beilstein J. Nanotechnol. 2018, 9, 1220–1227, doi:10.3762/bjnano.9.113

• ). Electrical measurements were performed at room temperature using a conventional four-probe setup with a Keithley 2400 source meter. The power dissipation on the deposits was limited to 1 nW to avoid self-heating and changes in atomic composition. The current voltage curve is provided in Supporting

Synthesis and characterization of two new TiO₂-containing benzothiazole-based imine composites for organic device applications

• Anna Różycka,
• Agnieszka Iwan,
• Krzysztof Artur Bogdanowicz,
• Michal Filapek,
• Natalia Górska,
• Damian Pociecha,
• Marek Malinowski,
• Patryk Fryń,
• Agnieszka Hreniak,
• Jakub Rysz,
• Paweł Dąbczyński and
• Monika Marzec

Beilstein J. Nanotechnol. 2018, 9, 721–739, doi:10.3762/bjnano.9.67

• architecture of the device is more likely to be used as a photodiode (I–V characteristics at first (I) and third (III) part of spectrum) than for solar cells (small effect under illumination at fourth (IV) part of current–voltage characteristics). However, additional work is required to improve the electrical

• TiO2 layer. A gold electrode was deposited by thermal evaporation in vacuum (5 × 10−6 mbar). The current–voltage (I–V) characteristics were measured under illumination of a AM1.5 solar simulator (Oriel 150 W). The light power density was measured by a Newport Oriel P/N 91150V reference solar cell

Combined scanning probe electronic and thermal characterization of an indium arsenide nanowire

• Tino Wagner,
• Fabian Menges,
• Heike Riel,
• Bernd Gotsmann and
• Andreas Stemmer

Beilstein J. Nanotechnol. 2018, 9, 129–136, doi:10.3762/bjnano.9.15

• the reconstruction method from sweeps of the bias current in Figure 2b. Two-terminal current–voltage (I–V) characteristics of the nanowire device, shown in Figure 3a, are calculated given the voltage drop across the source and drain electrodes, and the known current I passed through the nanowire. The

Inelastic electron tunneling spectroscopy of difurylethene-based photochromic single-molecule junctions

• Youngsang Kim,
• Safa G. Bahoosh,
• Dmytro Sysoiev,
• Thomas Huhn,
• Fabian Pauly and
• Elke Scheer

Beilstein J. Nanotechnol. 2017, 8, 2606–2614, doi:10.3762/bjnano.8.261

• current–voltage characteristics based on the two-parameter single-level model, where E0 specifies the position of an effective level with regard to the Fermi energy and Γ is the level broadening. Although the E0 values in the experiments are clearly smaller than the theoretically predicted differences of

• level broadening Γ, determined from the current−voltage measurements. Further discrepancies arise, if we quantitatively compare experimentally measured and theoretically predicted conductances. As stated above (see Figure 2), the predictions for the zero-temperature linear-response conductance of the

• spectra for the two different forms of C5F-ThM molecular junctions and compared them with computed IET spectra, as shown in Figure 3. The excitations of molecular vibrations appear as peaks in the second derivative of current–voltage characteristics (in the positive bias regime) and can be detected using

Robust procedure for creating and characterizing the atomic structure of scanning tunneling microscope tips

• Sumit Tewari,
• Koen M. Bastiaans,
• Milan P. Allan and
• Jan M. van Ruitenbeek

Beilstein J. Nanotechnol. 2017, 8, 2389–2395, doi:10.3762/bjnano.8.238

• multiple local apexes. For many purposes this does not hamper STM operation, since the tunnel current decays exponentially with the tunnel gap so that the atom closest to the surface will dominate the imaging signal. However, the reproducible shape of current–voltage spectra depends strongly on the tip

High-stress study of bioinspired multifunctional PEDOT:PSS/nanoclay nanocomposites using AFM, SEM and numerical simulation

• Alfredo J. Diaz,
• Hanaul Noh,
• Tobias Meier and
• Santiago D. Solares

Beilstein J. Nanotechnol. 2017, 8, 2069–2082, doi:10.3762/bjnano.8.207

• within the linear regime. Due to the difficulty and unreliability of holding the AFM probe steady during measurement (due to high drift in ambient conditions), which would be required in order to maintain a constant contact area during a current-voltage (I–V) measurement, we confirm linearity of the I–V

Spin-dependent transport and functional design in organic ferromagnetic devices

• Guichao Hu,
• Shijie Xie,
• Chuankui Wang and
• Carsten Timm

Beilstein J. Nanotechnol. 2017, 8, 1919–1931, doi:10.3762/bjnano.8.192

• identical nonmagnetic electrodes [31]. The spin-resolved and the total current calculated using the theory discussed in the previous section are shown in Figure 2a. The SP P = (I↑ − I↓)/(I↑ + I↓) of the current is given in Figure 2b. We have found a step-like current–voltage curve with a threshold voltage

• labeled as C1 (↑↑↑), C2 (↓↑↓), C3 (↑↑↓), and C4 (↓↑↑) and are illustrated in Figure 5c. The current–voltage characteristics for the four magnetization configurations are shown in Figure 6. It is found that the threshold voltage and the maximum magnitude of the current strongly depend on the magnetization

• -current rectification phenomenon can occur. Rectification of the charge current (CC) refers to an asymmetric current–voltage curve under reversal of the bias voltage. Molecular rectification has been proposed and investigated in the past decades, where the spatial asymmetry of the device, either at the

Three-in-one approach towards efficient organic dye-sensitized solar cells: aggregation suppression, panchromatic absorption and resonance energy transfer

• Jayita Patwari,
• Samim Sardar,
• Bo Liu,
• Peter Lemmens and
• Samir Kumar Pal

Beilstein J. Nanotechnol. 2017, 8, 1705–1713, doi:10.3762/bjnano.8.171

• , using time-resolved fluorescence decay measurements. The electron transfer time scales from the dyes to TiO2 have also been characterized for each dye. The current–voltage (I–V) characteristics and the wavelength-dependent photocurrent measurements of the co-sensitized DSSCs reveal that FRET between the

Transport characteristics of a silicene nanoribbon on Ag(110)

• Ryoichi Hiraoka,
• Chun-Liang Lin,
• Kotaro Nakamura,
• Ryo Nagao,
• Maki Kawai,
• Ryuichi Arafune and
• Noriaki Takagi

Beilstein J. Nanotechnol. 2017, 8, 1699–1704, doi:10.3762/bjnano.8.170

• silicene is to reduce the interfacial coupling. Recently, Tao et al. [24] successfully fabricated a silicene field effect transistor by peeling off the (2√3×2√3)R30° silicene from the Ag substrate and demonstrated the current–voltage characteristics supporting the survival of Dirac fermions. This study

Process-specific mechanisms of vertically oriented graphene growth in plasmas

• Subrata Ghosh,
• Shyamal R. Polaki,
• Niranjan Kumar,
• Sankarakumar Amirthapandian,
• Mohamed Kamruddin and
• Kostya (Ken) Ostrikov

Beilstein J. Nanotechnol. 2017, 8, 1658–1670, doi:10.3762/bjnano.8.166

• electrical properties. The linear current–voltage relationship from the four-probe resistance measurement confirms the ohmic behavior of all the studied samples (Figure 10). The NG film, grown at 600 °C, is also found to be electrically conducting with a sheet resistance of 5.6 kΩ/sq. The sheet resistance of

Group-13 and group-15 doping of germanane

• Nicholas D. Cultrara,
• Maxx Q. Arguilla,
• Shishi Jiang,
• Chuanchuan Sun,
• Michael R. Scudder,
• R. Dominic Ross and
• Joshua E. Goldberger

Beilstein J. Nanotechnol. 2017, 8, 1642–1648, doi:10.3762/bjnano.8.164

• measurements were conducted using a Keithley 4200-SCS attached to a Lake Shore Cryonics Inc. probe station. Two-probe current–voltage measurements were performed in both vacuum (ca. 10−4 mbar) and under ambient conditions in the dark. Schematic diagram of doped a) CaGe2 and b) GeH after detintercalation. Red

Parylene C as a versatile dielectric material for organic field-effect transistors

• Tomasz Marszalek,
• Maciej Gazicki-Lipman and
• Jacek Ulanski

Beilstein J. Nanotechnol. 2017, 8, 1532–1545, doi:10.3762/bjnano.8.155

• alteration of the current–voltage characteristics before and after an application of a passivation layer was recorded [67]. Because of the specific properties of the parylene deposition procedure taking place at room temperature, no changes in the semiconducting channel were induced and the device fabricated