Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride

• Daniel Hiller,
• Julian López-Vidrier,
• Keita Nomoto,
• Michael Wahl,
• Wolfgang Bock,
• Tomáš Chlouba,
• František Trojánek,
• Sebastian Gutsch,
• Margit Zacharias,
• Dirk König,
• Petr Malý and
• Michael Kopnarski

Beilstein J. Nanotechnol. 2018, 9, 1501–1511, doi:10.3762/bjnano.9.141

• , optical and electrical properties of P- and B-incorporating Si NCs in both embedding dielectrics. We will show that, despite some minor differences in the four different sample configurations, no free carriers associated to a doping behaviour of P or B are observed. Experimental Superlattices of SiO2 and

High-contrast and reversible scattering switching via hybrid metal-dielectric metasurfaces

• Jonathan Ward,
• Khosro Zangeneh Kamali,
• Lei Xu,
• Guoquan Zhang,
• Andrey E. Miroshnichenko and
• Mohsen Rahmani

Beilstein J. Nanotechnol. 2018, 9, 460–467, doi:10.3762/bjnano.9.44

• intensity of third harmonic light can be obtained for this system, via heating. This hybrid metasurface can find a wide range of applications in slow light, nonlinear optics and bio-chemical sensing. Keywords: dielectrics; directionality; metasurfaces; Mie resonance; plasmonics; reversible tuning

• an easy and reversible way. The large thermo-optical coefficient of dielectrics allows for active control of the devices optical properties by heating. This tunability can be done in a reversible and dynamic way using a parameter that is controlled externally. This tunable device then allows for flat

Parylene C as a versatile dielectric material for organic field-effect transistors

• Tomasz Marszalek,
• Maciej Gazicki-Lipman and
• Jacek Ulanski

Beilstein J. Nanotechnol. 2017, 8, 1532–1545, doi:10.3762/bjnano.8.155

• electronic devices and circuits, which not only comprise active layers, but also electrodes, dielectrics, insulators, substrates and protecting/encapsulating coatings. In this review, poly(chloro-para-xylylene) known as Parylene C, which appears to become a versatile supporting material especially suitable

• for applications in flexible organic electronics, is presented. A synthesis and basic properties of Parylene C are described, followed by several examples of use of parylenes as substrates, dielectrics, insulators, or protecting materials in the construction of organic field-effect transistors

• -effect mobility, investigated in rubrene single-crystal transistors equipped with various dielectrics layers, is shown in Figure 7. In Figure 7a, for the device based on Parylene C, the suppression of contact effects requires a larger VDS value (and thus also a larger value of VGS), in order to remain in

Micro- and nano-surface structures based on vapor-deposited polymers

• Hsien-Yeh Chen

Beilstein J. Nanotechnol. 2017, 8, 1366–1374, doi:10.3762/bjnano.8.138

• discovery, applications have been demonstrated to generate Nomarski poly(p-phenylene vinylene) (PPV) patterns from selectively deposited parylene™ N on surfaces with photolithographically fabricated iron structures (inhibitors) [78]. A required pore-sealing process for porous dielectrics was also performed

Optical response of heterogeneous polymer layers containing silver nanostructures

• Miriam Carlberg,
• Florent Pourcin,
• Olivier Margeat,
• Judikaël Le Rouzo,
• Gérard Berginc,
• Rose-Marie Sauvage,
• Jörg Ackermann and
• Ludovic Escoubas

Beilstein J. Nanotechnol. 2017, 8, 1065–1072, doi:10.3762/bjnano.8.108

• and nanoprisms embedded in the host matrix were fitted by the mathematical addition of the Cauchy law and the single Lorentz law centered at the dipolar resonance wavelength of the nanoparticles. Spectroscopic ellipsometry has been previously performed on nanoparticles embedded in dielectrics [19][20

Relationships between chemical structure, mechanical properties and materials processing in nanopatterned organosilicate fins

• Gheorghe Stan,
• Richard S. Gates,
• Qichi Hu,
• Kevin Kjoller,
• Craig Prater,
• Kanwal Jit Singh,
• Ebony Mays and
• Sean W. King

Beilstein J. Nanotechnol. 2017, 8, 863–871, doi:10.3762/bjnano.8.88

• of 10–100 nm. This length scale range is consistent with both prior experimental and theoretical investigations of oxygen-radical diffusion and CH3 depletion in blanket thin film/unpatterned nanoporous organosilicate dielectrics [32][49]. We also note that while the CH3 removal could likely be

• organosilicate clearly results in a slight stiffening of the fins, it also results in the incorporation of significant amounts of hydroxyl groups (Si–OH) that can increase both the dielectric constant/capacitance and electrical leakage of nanoporous oganosilicate dielectrics [51]. This is typically counteracted

• nanoporous organosilicate dielectrics in a similar fashion as observed previously by the pattern transfer process [31][52][53]. This is clearly shown in Figure 4a (curve iii) where the additional metallization processing also resulted in a decrease in SiC–H3 absorbance detected by AFM-IR from the 20 nm wide

Advances in the fabrication of graphene transistors on flexible substrates

• Gabriele Fisichella,
• Stella Lo Verso,
• Silvestra Di Marco,
• Vincenzo Vinciguerra,
• Emanuela Schilirò,
• Salvatore Di Franco,
• Raffaella Lo Nigro,
• Fabrizio Roccaforte,
• Amaia Zurutuza,
• Alba Centeno,
• Sebastiano Ravesi and
• Filippo Giannazzo

Beilstein J. Nanotechnol. 2017, 8, 467–474, doi:10.3762/bjnano.8.50

• applications. In this case the thickness and the dielectric constant of the insulating film have crucial importance in order to maintain a reasonably high gate capacitance of the final device. In particular, considering high κ-dielectrics such as HfO2 or Al2O3 with film thickness in the order of 10 nm, the

• from the reversibly contacted mercury probe on the other side. A wafer-scale matrix of sampled positions were collected on both the ST and the LT dielectric layers. Dielectric constants of 7.94 ± 0.05 and 7.91 ± 0.05 where extracted for ST and LT dielectrics, respectively, confirming a similar

Impact of contact resistance on the electrical properties of MoS₂ transistors at practical operating temperatures

• Filippo Giannazzo,
• Gabriele Fisichella,
• Aurora Piazza,
• Salvatore Di Franco,
• Giuseppe Greco,
• Simonpietro Agnello and
• Fabrizio Roccaforte

Beilstein J. Nanotechnol. 2017, 8, 254–263, doi:10.3762/bjnano.8.28

• coefficient, which depends on the gate oxide capacitance, on the doping concentration in the film and on the temperature: For thin gate dielectrics and low doping in the film, B can be approximated to 1, but for thick dielectrics and high doping its value can be significantly higher. In the case of our

Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals

• Ivan Shtepliuk,
• Jens Eriksson,
• Volodymyr Khranovskyy,
• Tihomir Iakimov,
• Anita Lloyd Spetz and
• Rositsa Yakimova

Beilstein J. Nanotechnol. 2016, 7, 1800–1814, doi:10.3762/bjnano.7.173

• heavy metals [30][31]. The main drawback of the FET-based sensors is the complex fabrication, followed by a necessity to grow the layers of high-k gate dielectrics. These additional steps can result in the formation of unexpected and uncontrollable interface states, deteriorating the output

Optical absorption signature of a self-assembled dye monolayer on graphene

• Tessnim Sghaier,
• Sylvain Le Liepvre,
• Céline Fiorini,
• Ludovic Douillard and
• Fabrice Charra

Beilstein J. Nanotechnol. 2016, 7, 862–868, doi:10.3762/bjnano.7.78

• have been reported to induced drastic changes in optical spectra, attributed to new electronic transitions [16]. Less pronounced rigid spectral shifts have been reported previously for molecules deposited on crystalline dielectrics such as hexagonal boron nitride (h-BN) [9][19]. The cited possible

Fabrication and properties of luminescence polymer composites with erbium/ytterbium oxides and gold nanoparticles

• Julia A. Burunkova,
• Ihor Yu. Denisiuk,
• Dmitri I. Zhuk,
• Lajos Daroczi,
• Attila Csik,
• István Csarnovics and
• Sándor Kokenyesi

Beilstein J. Nanotechnol. 2016, 7, 630–636, doi:10.3762/bjnano.7.55

• + ions [5]. In Er-doped dielectrics, the Er concentration needs to be kept low to avoid concentration quenching and cooperative upconversion. The possible solution can be to increase the excitation efficiency at lower ion concentrations, also in presence of Yb ions. In some works [6][7][8] the increase

Linear and nonlinear optical properties of hybrid metallic–dielectric plasmonic nanoantennas

• Mario Hentschel,
• Bernd Metzger,
• Bastian Knabe,
• Karsten Buse and
• Harald Giessen

Beilstein J. Nanotechnol. 2016, 7, 111–120, doi:10.3762/bjnano.7.13

• demonstrated in a purely plasmonic system up to now, despite claims made. From the conclusions above, it thus appears that the most promising route is the combination of plasmonically active components and dielectrics into hybrid structures, in particular for dielectric subsystems exhibiting strong nonlinear

• triangles [58]. Here, the monolayers are the source of the signal, rather than the silver triangles themselves. The main hurdle, however, is the weak nonlinearity of dielectrics when compared with noble metals, such as gold or silver. Nonlinear waveguides are thus a doubly smart choice, as the waveguide

Attenuation, dispersion and nonlinearity effects in graphene-based waveguides

• Almir Wirth Lima Jr.,
• João Cesar Moura Mota and
• Antonio Sergio Bezerra Sombra

Beilstein J. Nanotechnol. 2015, 6, 1221–1228, doi:10.3762/bjnano.6.125

• refractive index of dielectrics typically used in optical communications (approximately 109 higher) [28]. Moreover, the effective mode area was calculated as 2.2 × 10−7 × λ02 [7], which is much smaller than the values obtained to date. In our calculations we used the effective graphene cross-section modal

Morphological and structural characterization of single-crystal ZnO nanorod arrays on flexible and non-flexible substrates

• Omar F. Farhat,
• Mohd M. Halim,
• Mat J. Abdullah,
• Mohammed K. M. Ali and
• Nageh K. Allam

Beilstein J. Nanotechnol. 2015, 6, 720–725, doi:10.3762/bjnano.6.73

• realized by adjusting the synthesis conditions. Keywords: chemical bath deposition (CBD); nanorods; Raman; XRD; ZnO; Introduction Metal oxides are multifunctional materials with a wide range of applications encompassing photonic devices, high-K dielectrics, sensors, implants, and solar cells [1][2]. It

Kelvin probe force microscopy in liquid using electrochemical force microscopy

• Liam Collins,
• Stephen Jesse,
• Jason I. Kilpatrick,
• Alexander Tselev,
• M. Baris Okatan,
• Sergei V. Kalinin and
• Brian J. Rodriguez

Beilstein J. Nanotechnol. 2015, 6, 201–214, doi:10.3762/bjnano.6.19

• the sample. For non-conducting materials, such as semiconductors, dielectrics and ferroelectrics, additional Columbic terms arising from static charges and polarizability may also contribute to the detected force [46]. F2ω can be used to study local dielectric properties [47][48], and has recently

Advances in NO₂ sensing with individual single-walled carbon nanotube transistors

• Kiran Chikkadi,
• Matthias Muoth,
• Cosmin Roman,
• Miroslav Haluska and
• Christofer Hierold

Beilstein J. Nanotechnol. 2014, 5, 2179–2191, doi:10.3762/bjnano.5.227

• trapping in the oxide and the dielectrics surrounding the nanotube. Robert-Peillard et al. [61] developed a model to qualitatively describe this phenomenon by using Fowler–Nordheim-type behavior for charge trapping by tunneling through the oxide layer. Although this model qualitatively describes the

• later be removed selectively, it is possible to improve the contact resistance as well as reduce the hysteresis simultaneously, as shown by Khamis et al. [66] with organic layers, and Liu et al. [17] with an aluminium oxide layer. Another possibility is to eliminate dielectrics altogether, for example

• hysteresis. Furthermore, Muoth et al. [25][28][68] have shown that in the absence of wet chemical processing, dielectrics or resist residues on the nanotube, hysteresis completely disappears even in ambient air (see Figure 7), further suggesting that the water-related hysteresis mechanisms observed in

The study of surface wetting, nanobubbles and boundary slip with an applied voltage: A review

• Yunlu Pan,
• Bharat Bhushan and
• Xuezeng Zhao

Beilstein J. Nanotechnol. 2014, 5, 1042–1065, doi:10.3762/bjnano.5.117

• 1993, Berge added a dielectric layer between the liquid and solid [67] and greatly reduced the electrolysis that hindered the development of the applications of electrowetting. The electrowetting on dielectrics (EWOD) opened a new age for the study of electrowetting, the EWOD has been studied

Fullerenes as adhesive layers for mechanical peeling of metallic, molecular and polymer thin films

• Maria B. Wieland,
• Anna G. Slater,
• Barry Mangham,
• Neil R. Champness and
• Peter H. Beton

Beilstein J. Nanotechnol. 2014, 5, 394–401, doi:10.3762/bjnano.5.46

• . Furthermore this route may be used to remove molecular thin films from a metal substrate through a process of mechanical removal followed by etching, and also to transfer them to a dielectric surface. The method is demonstrated for a SiO2 substrate but is expected to be compatible with other dielectrics. The

Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al₂O₃-films

• Jörg Haeberle,
• Karsten Henkel,
• Hassan Gargouri,
• Franziska Naumann,
• Bernd Gruska,
• Michael Arens,
• Massimo Tallarida and
• Dieter Schmeißer

Beilstein J. Nanotechnol. 2013, 4, 732–742, doi:10.3762/bjnano.4.83

• been investigated for several applications like surface passivation or encapsulation in organic and inorganic photovoltaic devices [1][2], interfacial buffering for high-k dielectrics [3][4], organic memories [5], and nano-laminates [6] as well as work function modification [7], gas diffusion barrier

• . Furthermore, Al2O3 ALD layers have shown their ability as gate dielectrics for future graphene based electronics [16]. The most commonly used ALD sequence for thermal ALD (T-ALD) is the pulsed alternation of trimethyl-aluminum (TMA) as metal source and water as oxygen source, respectively [1][15][17]. Within

3D nano-structures for laser nano-manipulation

• Gediminas Seniutinas,
• Lorenzo Rosa,
• Gediminas Gervinskas,
• Etienne Brasselet and
• Saulius Juodkazis

Beilstein J. Nanotechnol. 2013, 4, 534–541, doi:10.3762/bjnano.4.62

• complex representation for the light field, the real Lorentz force density [N·m−3] is: where ρ = ρb + ρf and j = jb + jf are the total charge densities. First, let us consider the case of pure dielectrics without a free charge or a free current density. On the one hand, we have ρb = − · P and ρf = 0

A highly pH-sensitive nanowire field-effect transistor based on silicon on insulator

• Denis E. Presnov,
• Sergey V. Amitonov,
• Pavel A. Krutitskii,
• Valentina V. Kolybasova,
• Igor A. Devyatov,
• Vladimir A. Krupenin and
• Igor I. Soloviev

Beilstein J. Nanotechnol. 2013, 4, 330–335, doi:10.3762/bjnano.4.38

• sensitivity of ISFETs with special gate dielectrics such as Ta2O5. Moreover this sensitivity is comparable to the theoretical limitation at room temperature [12]. Field/charge sensors are traditionally characterized by a maximum charge sensitivity. To estimate this, we measured the NW FET conductivity

Diamond nanophotonics

• Katja Beha,
• Helmut Fedder,
• Marco Wolfer,
• Merle C. Becker,
• Petr Siyushev,
• Mohammad Jamali,
• Anton Batalov,
• Christopher Hinz,
• Jakob Hees,
• Lutz Kirste,
• Harald Obloh,
• Etienne Gheeraert,
• Boris Naydenov,
• Ingmar Jakobi,
• Florian Dolde,
• Sébastien Pezzagna,
• Daniel Twittchen,
• Matthew Markham,
• Daniel Dregely,
• Harald Giessen,
• Jan Meijer,
• Fedor Jelezko,
• Christoph E. Nebel,
• Rudolf Bratschitsch,
• Alfred Leitenstorfer and
• Jörg Wrachtrup

Beilstein J. Nanotechnol. 2012, 3, 895–908, doi:10.3762/bjnano.3.100

• finesse, the optical mode volume must be sufficiently small. Plasmonic resonators are well suited to provide such small mode volumes. In this case metals are used rather than dielectrics to confine optical light fields. The negative refractive index of the metal ensures that guided (localized) modes exist

Noncontact atomic force microscopy study of the spinel MgAl₂O₄(111) surface

• Morten K. Rasmussen,
• Kristoffer Meinander,
• Flemming Besenbacher and
• Jeppe V. Lauritsen

Beilstein J. Nanotechnol. 2012, 3, 192–197, doi:10.3762/bjnano.3.21

• ); polar surfaces; reconstructions; spinel; Introduction While the application of metal oxides in, e.g., catalysis, gas sensors, fuel cells, high-k dielectrics and corrosion protection has seen a very strong development, fundamental research on the surface properties of metal oxides has been a topic of