Investigating ripple pattern formation and damage profiles in Si and Ge induced by 100 keV Ar⁺ ion beam: a comparative study

• Indra Sulania,
• Harpreet Sondhi,
• Tanuj Kumar,
• Sunil Ojha,
• G R Umapathy,
• Ambuj Mishra,
• Ambuj Tripathi,
• Richa Krishna,
• Devesh Kumar Avasthi and
• Yogendra Kumar Mishra

Beilstein J. Nanotechnol. 2024, 15, 367–375, doi:10.3762/bjnano.15.33

• The RBS-c is an effective characterization technique for the estimation of amorphous depth and defect concentration in implanted single crystals. The RBS-c analysis for point defects shows a linear behaviour in defect density with ion fluence. The formation of highly dense dislocation loops beyond the

Titania nanoparticles for photocatalytic degradation of ethanol under simulated solar light

• Evghenii Goncearenco,
• Iuliana P. Morjan,
• Claudiu Teodor Fleaca,
• Florian Dumitrache,
• Elena Dutu,
• Monica Scarisoreanu,
• Valentin Serban Teodorescu,
• Alexandra Sandulescu,
• Crina Anastasescu and
• Ioan Balint

Beilstein J. Nanotechnol. 2023, 14, 616–630, doi:10.3762/bjnano.14.51

• of the complex PL band at 400 nm, the resolution of which into the components requires another investigation. Oxygen and titanium vacancies have been found. These points defects are created most probably at the surface of the powder particles because in the HRTEM figures we do not see any dislocation

SERS performance of GaN/Ag substrates fabricated by Ag coating of GaN platforms

• Magdalena A. Zając,
• Bogusław Budner,
• Malwina Liszewska,
• Bartosz Bartosewicz,
• Łukasz Gutowski,
• Jan L. Weyher and
• Bartłomiej J. Jankiewicz

Beilstein J. Nanotechnol. 2023, 14, 552–564, doi:10.3762/bjnano.14.46

• following the procedure described elsewhere [31][32]. The surface morphology depends on the time of photoetching and the overall dislocation density [32]. Next, the fabricated nanostructured GaN platforms were coated with a Ag layer using PLD and MS to form GaN/Ag SERS substrates (Figure 1). To compare SERS

• , nanostructured GaN platforms were prepared from commercial MOCVD-grown GaN on sapphire wafers by photoetching [45]. The 5 μm thick GaN layers were n-type with a carrier concentration n = 1 × 1018 cm−3 and a dislocation density of about 8 × 108 cm−2. The 5 × 5 mm samples were cut from 3″ MOCVD-grown GaN on

Electrical and optical enhancement of ITO/Mo bilayer thin films via laser annealing

• Abdelbaki Hacini,
• Ahmad Hadi Ali,
• Nurul Nadia Adnan and
• Nafarizal Nayan

Beilstein J. Nanotechnol. 2022, 13, 1589–1595, doi:10.3762/bjnano.13.133

• seen that the predominant peaks are (222) and (400), which are the preferred orientations before and after laser annealing. The intensities of the crystallite peaks orientation increased and attained a maximum at 200 mJ. The crystallite size (D) and the dislocation density (δ) were determined from the

• XRD peaks using the following equations [28]: where D, 0.9, λ, β, and δ are the crystallite size, the shape factor, the wavelength of the incident X-rays, the full width at half maximum of the reflection at the diffraction angle θβ, and the dislocation density, respectively. The average crystallite

• size increased with the laser energy up to 200 mJ. It decreased to reach a minimum at an energy of 240 mJ. This trend in crystallite size is due to the rearrangement of the nanostructure. The particles sizes increase, defects are reduced, and the dislocation density (δ) decreases from 6.53 × 1014 to

Bending and punching characteristics of aluminum sheets using the quasi-continuum method

• Man-Ping Chang,
• Shang-Jui Lin and
• Te-Hua Fang

Beilstein J. Nanotechnol. 2022, 13, 1303–1315, doi:10.3762/bjnano.13.108

• , the effect of crystal orientation on the materials will be firstly considered. The mechanical properties of single-crystal materials can be strongly affected by the crystal orientation [56], such as the elastic stress [57], thermomechanical fatigue behavior [58], and the dislocation effect of

Effects of temperature and repeat layer spacing on mechanical properties of graphene/polycrystalline copper nanolaminated composites under shear loading

• Chia-Wei Huang,
• Man-Ping Chang and
• Te-Hua Fang

Beilstein J. Nanotechnol. 2021, 12, 863–877, doi:10.3762/bjnano.12.65

• ) composites under shear loading are investigated by molecular dynamics simulations. The effects of different temperatures, graphene chirality, repeat layer spacing, and grain size on the mechanical properties, such as failure mechanism, dislocation, and shear modulus, are observed. The results indicate that

• . Keywords: dislocation; graphene/Cu; molecular dynamics; shear; self-healing; Introduction Graphene is a monolayered hexagonal thin film composed of sp2-bonded carbon atoms and has extraordinary properties for applications in nanoelectronics [1][2][3][4][5][6]. However, because of the two-dimensional

• applying a consistent velocity to the composites along the x-direction. The grain size D of the simulation model ranges from 4.24 to 9.43 nm. Deformation and dislocation evolution of the model are analyzed and visualized using the Open Visualization Tool (OVITO). Results and Discussion Effect of

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

• Frances I. Allen

Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52

• subsurface voids was indeed also observed [16]. Threshold doses for the formation of a subsurface dislocation band, for the onset of amorphization, and for the formation of nanobubbles and larger voids, were established (as shown earlier in Figure 1c). Tan et al. performed detailed TEM cross-sectional

Determination of elastic moduli of elastic–plastic microspherical materials using nanoindentation simulation without mechanical polishing

• Hongzhou Li and
• Jialian Chen

Beilstein J. Nanotechnol. 2021, 12, 213–221, doi:10.3762/bjnano.12.17

• effect of indentation [12]. Swadener et al. pointed out that, for some cases, the hardness is decreased with decreasing depth due to the predicted decrease in dislocation density [12]. The indented specimen is assumed to be a perfectly flat surface for the Oliver–Pharr method, thus ignoring the

Effect of localized helium ion irradiation on the performance of synthetic monolayer MoS₂ field-effect transistors

• Jakub Jadwiszczak,
• Pierce Maguire,
• Conor P. Cullen,
• Georg S. Duesberg and
• Hongzhou Zhang

Beilstein J. Nanotechnol. 2020, 11, 1329–1335, doi:10.3762/bjnano.11.117

• cm−2 [13][14][15][16][17], as well as good electrical conductivity for up to approx. 1018 ions cm−2 [9][10][18]. Sulfur vacancies (SVs) and the formation of a dislocation–divacancy complex can lead to significant n-doping in MoS2 [19], which shifts the threshold voltage (Vth) of the FET to higher

Observation of unexpected uniaxial magnetic anisotropy in La_2/3Sr_1/3MnO₃ films by a BaTiO₃ overlayer in an artificial multiferroic bilayer

• John E. Ordóñez,
• Lorena Marín,
• Luis A. Rodríguez,
• Pedro A. Algarabel,
• José A. Pardo,
• Roger Guzmán,
• Luis Morellón,
• César Magén,
• Etienne Snoeck,
• María E. Gómez and
• Manuel R. Ibarra

Beilstein J. Nanotechnol. 2020, 11, 651–661, doi:10.3762/bjnano.11.51

• strain maps reflect homogeneous and dislocation-free STO and LSMO layers, and a BTO layer with several linear defects, most of which are concentrated close to the BTO/LSMO interfaces. Misfit dislocation-free epitaxial growth of LSMO films under (001)-oriented STO substrates is expected and widely

• a quantitative strain analysis, profiles of εxx and εzz extracted from the GPA maps are plotted in Figure 5d and Figure 5e. These profiles are traced perpendicular to the interfaces, along two zones: Through a horizontal misfit dislocation (Profile 1) and through a dislocation-free region (Profile 2

• ). For comparison between the strain results obtained by GPA and by RSMs, we also plotted strain profiles in terms of fa-system and fc-system. In Profile 1, we see that εxx is equal to zero, on average, inside the STO and LSMO systems which presents a discontinuity around the BTO dislocation and finally

Influence of the epitaxial composition on N-face GaN KOH etch kinetics determined by ICP-OES

• Markus Tautz,
• Maren T. Kuchenbrod,
• Joachim Hertkorn,
• Robert Weinberger,
• Martin Welzel,
• Arno Pfitzner and
• David Díaz Díaz

Beilstein J. Nanotechnol. 2020, 11, 41–50, doi:10.3762/bjnano.11.4

• structure of a GaN layer stack grown by metal organic chemical vapour deposition (MOCVD) was varied in the unintentionally doped u-GaN bulk region. Different sequences of 2D and 3D grown layers led to a variation in dislocation density, which was monitored by photoluminescence microscopy (PLM) and X-ray

• phosphor-converted white LEDs [2]. To reach a high internal quantum efficiency (IQE), crystal quality must be high in terms of low dislocation density [3]. Dislocations cause non-radiative recombination of induced electron hole pairs and thus lower efficiency. That is why considerable effort is put into

• the optimization of epitaxial growth to achieve the lowest possible dislocation density. Most often, GaN is produced in the LED industry by metal organic chemical vapour deposition (MOCVD) in a heteroepitaxial process on sapphire substrates [4]. The lattice parameter mismatch of ca. 13.8% between GaN

Abrupt elastic-to-plastic transition in pentagonal nanowires under bending

• Sergei Vlassov,
• Magnus Mets,
• Boris Polyakov,
• Jianjun Bian,
• Leonid Dorogin and
• Vahur Zadin

Beilstein J. Nanotechnol. 2019, 10, 2468–2476, doi:10.3762/bjnano.10.237

• -fold twinned structure prevents propagation of critical defects, leading to dislocation pile up that may lead to sudden stress release, which is observed as an abrupt plastic event. Moreover, we found that if the NWs are coated with alumina, the abrupt plastic event is not observed and the NWs can

• boundaries [42]. With the progression of bending deformation, another dislocation source is also activated, and a new dislocation nucleation and propagation lead to the second distinct load drop of the loading curve (Figure 8ii). In the following stage, the bending force gradually becomes stable at

• dislocation nucleation sites because of the stress concentration, and therefore deformation is easier to sustain by new dislocation nucleation rather than cross-slipping of existing dislocation at twin boundaries. On the basis of the conducted experiments, electron microscopy observations and simulations we

Superconducting switching due to a triplet component in the Pb/Cu/Ni/Cu/Co₂Cr_1−xFe_xAl_y spin-valve structure

• Andrey Andreevich Kamashev,
• Nadir Nurgayazovich Garif’yanov,
• Aidar Azatovich Validov,
• Joachim Schumann,
• Vladislav Kataev,
• Bernd Büchner,
• Yakov Victorovich Fominov and
• Ilgiz Abdulsamatovich Garifullin

Beilstein J. Nanotechnol. 2019, 10, 1458–1463, doi:10.3762/bjnano.10.144

• even larger because the density of dislocation increases with decreasing Tsub. As to the HA layer, our SQUID magnetization measurements show that the onset of the saturation of its magnetization occurs at 30 Oe. At higher magnetic fields the magnetization continues to increase slightly up to the

Concurrent nanoscale surface etching and SnO₂ loading of carbon fibers for vanadium ion redox enhancement

• Jun Maruyama,
• Shohei Maruyama,
• Tomoko Fukuhara,
• Toru Nagaoka and
• Kei Hanafusa

Beilstein J. Nanotechnol. 2019, 10, 985–992, doi:10.3762/bjnano.10.99

• the slightly retained amorphous carbon might prevent potential dislocation and dissolution of the SnO2 particles. Conclusion The thermal oxidation of Sn-containing carbonaceous thin films on a carbon fiber surface, which was formed by sublimation, deposition, and pyrolysis of SnPc during a single-step

Self-assembly and wetting properties of gold nanorod–CTAB molecules on HOPG

• Imtiaz Ahmad,
• Floor Derkink,
• Tim Boulogne,
• Pantelis Bampoulis,
• Harold J. W. Zandvliet,
• Hidayat Ullah Khan,
• Rahim Jan and
• E. Stefan Kooij

Beilstein J. Nanotechnol. 2019, 10, 696–705, doi:10.3762/bjnano.10.69

• time, whereas the ones on the right portion begin to disappear. We ascribe this disappearance of the stripes to originate from the dislocation of CTAB molecules, creating point defects. Such defects will make the molecules less tightly bound at the defect site, and hence, support the growth of defects

Hydrogen-induced plasticity in nanoporous palladium

• Markus Gößler,
• Eva-Maria Steyskal,
• Markus Stütz,
• Norbert Enzinger and
• Roland Würschum

Beilstein J. Nanotechnol. 2018, 9, 3013–3024, doi:10.3762/bjnano.9.280

• above-mentioned tunable properties in nanoporous metals. The deformation mechanism in such structures has been discussed in detail. Since nanoporous materials exhibit high surface-to-volume ratios, moving dislocations may escape crystals via the surface, which may lead to a scenario of dislocation

• starvation [27]. This dislocation starvation also implies that the work hardening mechanism, which is based on dislocation interactions, is not active. However, current literature suggests that the active deformation mechanism in npAu is dislocation slip [28] and that dislocation starvation is not effective

• at low strains in npAu. Despite the local dislocation activity in the ligaments, macroscopic plasticity, involving dislocations travelling larger distances in the network structure, is hard to achieve in nanoporous metals [15]. Plastic deformation in npPd has not been the subject of experimental

Friction reduction through biologically inspired scale-like laser surface textures

• Johannes Schneider,
• Vergil Djamiykov and
• Christian Greiner

Beilstein J. Nanotechnol. 2018, 9, 2561–2572, doi:10.3762/bjnano.9.238

• dislocation activity under a tribological load [8]. The microstructure under the contact therefore undergoes drastic and complex changes during sliding, which in themselves strongly depend on the nature of the tribological loading conditions [52]. We have studied such phenomena in detail recently with high

Optimization of the optical coupling in nanowire-based integrated photonic platforms by FDTD simulation

• Nan Guan,
• Andrey Babichev,
• Martin Foldyna,
• Dmitry Denisov,
• François H. Julien and
• Maria Tchernycheva

Beilstein J. Nanotechnol. 2018, 9, 2248–2254, doi:10.3762/bjnano.9.209

• tunable bandgap [14] and reduced dislocation density [15][16], nitride nanowires (NWs) have become important materials for optical components in the visible to ultraviolet (UV) spectral range [17][18]. Despite their small size, single NW light emitting diodes (LEDs) can produce bright electroluminescence

The inhibition effect of water on the purification of natural gas with nanoporous graphene membranes

• Krzysztof Nieszporek,
• Tomasz Pańczyk and
• Jolanta Nieszporek

Beilstein J. Nanotechnol. 2018, 9, 1906–1916, doi:10.3762/bjnano.9.182

• was maintained at 300 K using velocity rescaling with a stochastic term [19] and a time constant of 0.1 ps. In order to enable possible deformations, the graphene sheets were flexible; to avoid vertical dislocation due to collisions with separated gases, the carbon atoms in each graphene corner were

Toward the use of CVD-grown MoS₂ nanosheets as field-emission source

• Geetanjali Deokar,
• Nitul S. Rajput,
• Junjie Li,
• Francis Leonard Deepak,
• Wei Ou-Yang,
• Nicolas Reckinger,
• Carla Bittencourt,
• Jean-Francois Colomer and
• Mustapha Jouiad

Beilstein J. Nanotechnol. 2018, 9, 1686–1694, doi:10.3762/bjnano.9.160

• nm Mo film at 850 °C on SiO2/Si substrates: (a) HAADF-STEM image at low magnification with different observed materials layers marked; (b) TEM image at the interface between the MoS2 NSs and the Pt layer; (c) higher magnification of layer A showing edge dislocation (marked with “T”) in the MoS2

Friction force microscopy of tribochemistry and interfacial ageing for the SiO_x/Si/Au system

• Christiane Petzold,
• Marcus Koch and
• Roland Bennewitz

Beilstein J. Nanotechnol. 2018, 9, 1647–1658, doi:10.3762/bjnano.9.157

• ageing have been identified, e.g., material creep [5], structural changes in the interfacial contact [6][7] or an increase in number of chemical bonds [8][9]. The frictional strength may also grow in time by rotation of the contacting surfaces into a preferred misorientation defined by dislocation

Fatigue crack growth characteristics of Fe and Ni under cyclic loading using a quasi-continuum method

• Ren-Zheng Qiu,
• Yi-Chen Lin and
• Te-Hua Fang

Beilstein J. Nanotechnol. 2018, 9, 1000–1014, doi:10.3762/bjnano.9.93

• at any orientation, the slip dislocation observed in the materials considerably affects the release of stress. Keywords: dislocations; fatigue crack growth; materials treatment effects; mechanics; shear stress; Introduction When materials undergo cyclic loading, the growth of cracks in the material

• . Zhang et al. have examined the effect of the phase boundary on the fatigue crack propagation in an α/β-iron biphasic system under cyclic tensile loading [13]. They found that the nucleation of new cracks typically appears at the phase boundary because of dislocation pile-ups. However, most of these

• crack tip was observed, which released the internal stress. Moreover, with increasing shear distance to the point b shown in Figure 14b, another slip was generated along the [110] orientation. The length of the second slip dislocation extended to the same length as the first one. When the first shear

Cyclodextrin inhibits zinc corrosion by destabilizing point defect formation in the oxide layer

• Abdulrahman Altin,
• Maciej Krzywiecki,
• Adnan Sarfraz,
• Cigdem Toparli,
• Claudius Laska,
• Philipp Kerger,
• Aleksandar Zeradjanin,
• Karl J. J. Mayrhofer,
• Michael Rohwerder and
• Andreas Erbe

Beilstein J. Nanotechnol. 2018, 9, 936–944, doi:10.3762/bjnano.9.86

• observed in the O 1s region for both components. The ZnO related components shift by ≈0.90 eV, almost twice as much as those of the Zn 2p and 3d levels. The β-CD related C 1s level shift is only 0.20 eV. Energy level shift is a sign of charge dislocation across the β-CD/ZnO interface. (As explained above

• , defect levels affect the VBonset and VBmax energy positions differently, consequently altering the density of states in the VB region. Altered density of states leads to different charge carrier densities at the interface and a decrease in potential barrier for charge dislocation.) From the magnitude of

• the energy level shift, oxygen must be the main center for the charge dislocation. It is highly probable that charge is drained from the n-type ZnO layer towards the β-CD layer, which consequently behaves like a p-type system in this situation. This conclusion is supported by He II UPS, showing EF

Blister formation during graphite surface oxidation by Hummers’ method

• Olga V. Sinitsyna,
• Georgy B. Meshkov,
• Anastasija V. Grigorieva,
• Alexander A. Antonov,
• Inna G. Grigorieva and
• Igor V. Yaminsky

Beilstein J. Nanotechnol. 2018, 9, 407–414, doi:10.3762/bjnano.9.40

• dislocations with Burgers vector perpendicular to the basal plane. In the second case, atomic steps are located mainly below the surface. The deeper an atomic step lies, the smoother the relief on the surface. In our AFM experiments, we observed surface height changes for the dislocation lines located at a

• HAPG surface after cleavage contains significantly less defects in the ordered areas than HOPG with mosaic spread of 0.8° (Figure 3a,b). Thus, the length of the cleavage steps per square micrometer in HAPG is 0.2–0.3 μm−1, and the length of the dislocation lines per square micrometer is about 0.2 μm−1

• . The lengths of the cleavage steps and the dislocation lines for HOPG are 1–3 μm−1 and about 1 μm−1, respectively. The height of the cleavage steps is usually less than 1 nm (1–3 carbon layers) for both types of graphite. Sometimes a cleavage step ends in the center of an atomic terrace, indicating the

Liquid-crystalline nanoarchitectures for tissue engineering

• Baeckkyoung Sung and
• Min-Ho Kim

Beilstein J. Nanotechnol. 2018, 9, 205–215, doi:10.3762/bjnano.9.22

• -compatible subcutaneous implant [108]. Synthetic substrates, membranes, and dispersions in other LC geometries Smectic-like and columnar-like architectures can be also adopted as nanostructures for tissue engineering and regenerative medicine. Lamellar templates in the smectic phase with spiral dislocation

• -layer erosion can be utilized as a repeated delivery mechanism of drug molecules to the adhered cells on the interface. However, the biophysical interaction between the adhered cells and the nanotopography of the spiral dislocation structure remains to be revealed. Viscoelastic strings of lamellar