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Search for "dopant" in Full Text gives 118 result(s) in Beilstein Journal of Nanotechnology.

Paramagnetism of cobalt-doped ZnO nanoparticles obtained by microwave solvothermal synthesis

  • Jacek Wojnarowicz,
  • Sylwia Kusnieruk,
  • Tadeusz Chudoba,
  • Stanislaw Gierlotka,
  • Witold Lojkowski,
  • Wojciech Knoff,
  • Malgorzata I. Lukasiewicz,
  • Bartlomiej S. Witkowski,
  • Anna Wolska,
  • Marcin T. Klepka,
  • Tomasz Story and
  • Marek Godlewski

Beilstein J. Nanotechnol. 2015, 6, 1957–1969, doi:10.3762/bjnano.6.200

Graphical Abstract
  • ; therefore, no change in lattice parameters is expected when Zn is replaced by Co in the ZnO crystal lattice. We assume, however, that increasing the concentration of the cobalt dopant should change the lattice parameters, which is related to the CoO cubic structure. In fact, the observed change in lattice
  • was no effect due to the change in the morphology caused by increasing the cobalt dopant. Zn1−xCoxO NPs produced at low temperature (220 °C) by the MSS method are paramagnetic for Zn1−xCoxO in the range of 0–15 mol %. Annealing at 800 °C in nitrogen causes the formation of metallic inclusions, while
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Published 30 Sep 2015

Metal hydrides: an innovative and challenging conversion reaction anode for lithium-ion batteries

  • Luc Aymard,
  • Yassine Oumellal and
  • Jean-Pierre Bonnet

Beilstein J. Nanotechnol. 2015, 6, 1821–1839, doi:10.3762/bjnano.6.186

Graphical Abstract
  • and H2 is energetically favorable, but may be kinetically inhibited by separation into pure phases. The effects of various light-metal (Mg, Al, Li) and transition-metals (V, Cr, Mn, Fe, Co, Cu, Zn) dopant on the electrochemical properties of NiTiH hydrides as anodes for Li-ion batteries where
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Published 31 Aug 2015

A facile method for the preparation of bifunctional Mn:ZnS/ZnS/Fe3O4 magnetic and fluorescent nanocrystals

  • Houcine Labiadh,
  • Tahar Ben Chaabane,
  • Romain Sibille,
  • Lavinia Balan and
  • Raphaël Schneider

Beilstein J. Nanotechnol. 2015, 6, 1743–1751, doi:10.3762/bjnano.6.178

Graphical Abstract
  • dominant one at approximately 584 nm (visible, orange wavelength region). The first emission is associated with transitions involving vacancy states of the ZnS host material [24][30], while the second one originates from the Mn2+ dopant, which is excited via energy transfer of the ZnS host followed by the
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Published 17 Aug 2015

Atomic scale interface design and characterisation

  • Carla Bittencourt,
  • Chris Ewels and
  • Arkady V. Krasheninnikov

Beilstein J. Nanotechnol. 2015, 6, 1708–1711, doi:10.3762/bjnano.6.174

Graphical Abstract
  • absorption and emission devices require doping [4][5]. In this context, conventional bulk doping techniques must be adapted, given the large surface to volume ratio of nanostructures, surface segregation of dopant atoms is a severe drawback. Therefore detailed knowledge and control of the physical and
  • simulated. An impressive example of how STM experiments and DFT calculations together can unravel the atomic structure of the material is given in the article by J. A. Lawlor and M. S. Ferreira [26] focused on the identification of dopant impurities in graphene. Synergy effects of TEM and DFT are
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Editorial
Published 10 Aug 2015

High photocatalytic activity of V-doped SrTiO3 porous nanofibers produced from a combined electrospinning and thermal diffusion process

  • Panpan Jing,
  • Wei Lan,
  • Qing Su and
  • Erqing Xie

Beilstein J. Nanotechnol. 2015, 6, 1281–1286, doi:10.3762/bjnano.6.132

Graphical Abstract
  • of SrTiO3. Previous works showed that doping with 3d (V, Fe, Ni) and 4f (Nd, Sm, Er) ions can significantly decrease the band gap through the hybridization of the Ti-3d and dopant-d states [16][17]. Additionally, the doped SrTiO3 also has an improved conductivity. Several groups have reported the
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Published 09 Jun 2015

Addition of Zn during the phosphine-based synthesis of indium phospide quantum dots: doping and surface passivation

  • Natalia E. Mordvinova,
  • Alexander A. Vinokurov,
  • Oleg I. Lebedev,
  • Tatiana A. Kuznetsova and
  • Sergey G. Dorofeev

Beilstein J. Nanotechnol. 2015, 6, 1237–1246, doi:10.3762/bjnano.6.127

Graphical Abstract
  • the Zn dopant atoms are situated inside the InP nanoparticles. Moreover, doping with Zn is accompanied with the coverage of the QDs by a zinc shell. During the synthesis Zn myristate covers the QD nucleus and inhibits the particle growth. At the same time the zinc shell leads to an increase of the
  • that the doping of III–V QDs creates an opportunity to produce materials with new optical properties that vary depending on the dopant type. This opportunity has promoted the development of synthetic methods for incorporating dopants into InP QDs. There are some efforts focused on the incorporation of
  • spectra were deconvoluted in energy coordinates by using two Gaussian functions: One is related to the excitonic peak and the other to surface defects (Figure 9a) in case of non-doped sample and to the dopant in case of doped QDs, respectively (Figure 9b). Figure 10a shows how the excitonic peaks change
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Published 01 Jun 2015

Transformation of hydrogen titanate nanoribbons to TiO2 nanoribbons and the influence of the transformation strategies on the photocatalytic performance

  • Melita Rutar,
  • Nejc Rozman,
  • Matej Pregelj,
  • Carla Bittencourt,
  • Romana Cerc Korošec,
  • Andrijana Sever Škapin,
  • Aleš Mrzel,
  • Srečo D. Škapin and
  • Polona Umek

Beilstein J. Nanotechnol. 2015, 6, 831–844, doi:10.3762/bjnano.6.86

Graphical Abstract
  • dopant in the TiO2 matrix significantly reduced the photoactivity of the TiO2 nanoribbons, regardless of the doping method. This suggests that adsorption properties of ispropanol to the surface of the N-doped TiO2 nanoribbons were significnalty reduced in comparison with the undoped TiO2 nanoribbons. A
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Published 27 Mar 2015

Morphology control of zinc oxide films via polysaccharide-mediated, low temperature, chemical bath deposition

  • Florian Waltz,
  • Hans-Christoph Schwarz,
  • Andreas M. Schneider,
  • Stefanie Eiden and
  • Peter Behrens

Beilstein J. Nanotechnol. 2015, 6, 799–808, doi:10.3762/bjnano.6.83

Graphical Abstract
  • the formation of crystalline ZnO [30]. Doping is carried out by the simple addition of the corresponding dopant salt to the deposition solution. In addition to doping, the microstructure of the resulting film, which involves the crystallite size as well as the morphology of the crystallites and the
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Published 24 Mar 2015

Tm-doped TiO2 and Tm2Ti2O7 pyrochlore nanoparticles: enhancing the photocatalytic activity of rutile with a pyrochlore phase

  • Desiré M. De los Santos,
  • Javier Navas,
  • Teresa Aguilar,
  • Antonio Sánchez-Coronilla,
  • Concha Fernández-Lorenzo,
  • Rodrigo Alcántara,
  • Jose Carlos Piñero,
  • Ginesa Blanco and
  • Joaquín Martín-Calleja

Beilstein J. Nanotechnol. 2015, 6, 605–616, doi:10.3762/bjnano.6.62

Graphical Abstract
  • in order to determine the influence of the dopant concentration and annealing temperature on the phase, crystallinity, and electronic and optical properties of the resulting material. Various characterization techniques were utilized such as X-ray diffraction, Raman spectroscopy, X-ray photoelectron
  • study, Tm-doped TiO2 nanoparticles were synthesized using a water-controlled hydrolysis reaction. The effect of the dopant concentration and the annealing temperature on the resulting phase, crystallinity, and electronic and optical properties was analyzed. A pyrochlore phase (Tm2Ti2O7) was observed in
  • . Moreover, for both phases, the higher the annealing temperature, the higher the t, due to the sintering of the nanocrystals. Generally, t decreases with an increased dopant concentration. The introduction of a Tm3+ ion into the structure can create structural distortions that break the crystal continuity
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Published 02 Mar 2015

Silica micro/nanospheres for theranostics: from bimodal MRI and fluorescent imaging probes to cancer therapy

  • Shanka Walia and
  • Amitabha Acharya

Beilstein J. Nanotechnol. 2015, 6, 546–558, doi:10.3762/bjnano.6.57

Graphical Abstract
  • of dopant ions in a nanoparticle environment. Thus these new classes of materials can be used as potential fluorescent probes for biomedical imaging. Singh et al. [16] reported the synthesis of luminescent YVO4:Eu3+ NPs incorporated inside mesoporous silica NPs through a sol–gel process. The
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Published 24 Feb 2015

Palladium nanoparticles anchored to anatase TiO2 for enhanced surface plasmon resonance-stimulated, visible-light-driven photocatalytic activity

  • Kah Hon Leong,
  • Hong Ye Chu,
  • Shaliza Ibrahim and
  • Pichiah Saravanan

Beilstein J. Nanotechnol. 2015, 6, 428–437, doi:10.3762/bjnano.6.43

Graphical Abstract
  • compare to TiO2 nanotubes (250 min) [28]. Similarly, Kwak et al. found that by incorporating Pd into TiO2 led to an improved hydrogen production compared to pure TiO2 [29]. Hence, it is clear that the inclusion of noble metals either as dopant or composite contributes to an enhanced visible-light
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Published 11 Feb 2015

Nanoporous Ge thin film production combining Ge sputtering and dopant implantation

  • Jacques Perrin Toinin,
  • Alain Portavoce,
  • Khalid Hoummada,
  • Michaël Texier,
  • Maxime Bertoglio,
  • Sandrine Bernardini,
  • Marco Abbarchi and
  • Lee Chow

Beilstein J. Nanotechnol. 2015, 6, 336–342, doi:10.3762/bjnano.6.32

Graphical Abstract
  • and dopant ion implantation. The process entails four successive steps: (i) Ge sputtering on SiO2, (ii) implantation preannealing, (iii) high-dose dopant implantation, and (iv) implantation postannealing. Scanning electron microscopy and transmission electron microscopy were used to characterize the
  • 180 keV, and (iii) the last set of samples were co-implanted with both Se and Te atoms under the same conditions as previously mentioned. Figure 1 shows the predicted dopant and vacancy concentration profiles induced by implantation using the Stopping and Range of Ions in Matter (SRIM) software. This
  • defects are also taken into account, allowing the distribution of point defects created in the target material to be obtained [27][28]. The dopant distributions follow a Gaussian distribution with a maximum concentration of 5 × 1020 atoms/cm3 located at a depth of 55 nm. Given that the more Ge-rich, Ge–Se
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Published 30 Jan 2015

Tunable white light emission by variation of composition and defects of electrospun Al2O3–SiO2 nanofibers

  • Jinyuan Zhou,
  • Gengzhi Sun,
  • Hao Zhao,
  • Xiaojun Pan,
  • Zhenxing Zhang,
  • Yujun Fu,
  • Yanzhe Mao and
  • Erqing Xie

Beilstein J. Nanotechnol. 2015, 6, 313–320, doi:10.3762/bjnano.6.29

Graphical Abstract
  • a Gaussian fit. The 420 nm-centered broad bands are regarded as blue light centers, the 520 nm and 550 nm bands are green light centers, and the 610 nm band as a red emission center. Obviously, a suitable dopant of Si or Al into the composite samples are required for light emission. It can be seen
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Published 28 Jan 2015

X-ray photoelectron spectroscopy of graphitic carbon nanomaterials doped with heteroatoms

  • Toma Susi,
  • Thomas Pichler and
  • Paola Ayala

Beilstein J. Nanotechnol. 2015, 6, 177–192, doi:10.3762/bjnano.6.17

Graphical Abstract
  • been long studied for this and other purposes [22][23]. One of the key issues for controlled heteroatom doping is the detection and identification of the dopant atoms, and the further analysis of their concentration and atomic bonding environment in the studied materials. Compared to bulk solids
  • , individual nano-objects are composed of far fewer atoms, and thus usual dopant concentrations correspond to a rather limited number of heteroatoms in the lattice. A typical sample must therefore be composed of innumerable such nanostructures in order to reach a measurable quantity, and thus any variability
  • been widely studied [2][12][40][41][42][43][44][45]. Since the binding energies of even the simplest dopant structures are still being debated, discussion of complicated hybrid structures or doping with more than one element at the same time will be omitted. However, we will endeavor to comprehensively
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Published 15 Jan 2015

Materials and characterization techniques for high-temperature polymer electrolyte membrane fuel cells

  • Roswitha Zeis

Beilstein J. Nanotechnol. 2015, 6, 68–83, doi:10.3762/bjnano.6.8

Graphical Abstract
  • acid reaches all areas of the membrane sheet. This slow doping process can be monitored by confocal Raman microscopy. The integrated intensities of the bands at 1570 cm−1 and 1611 cm−1 were used as indicators for the interaction between the AB-PBI host and the phosphoric acid dopant. These two peaks
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Published 07 Jan 2015

Synthesis of radioactively labelled CdSe/CdS/ZnS quantum dots for in vivo experiments

  • Gordon M. Stachowski,
  • Christoph Bauer,
  • Christian Waurisch,
  • Denise Bargheer,
  • Peter Nielsen,
  • Jörg Heeren,
  • Stephen G. Hickey and
  • Alexander Eychmüller

Beilstein J. Nanotechnol. 2014, 5, 2383–2387, doi:10.3762/bjnano.5.247

Graphical Abstract
  • properties (e.g., dopant emission, PL enhancement or quenching). Experimental Synthesis of CdSe/CdS QDs Into a 25 mL three-neck flask, 10 mL of 1-octadecene (ODE), 0.4 mmol of Cd(oleate)2 as a stock, 2 g hexadecylamine and 2 g trioctylphosphine oxide was loaded. After degassing, the temperature was set to
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Published 10 Dec 2014

Low cost, p-ZnO/n-Si, rectifying, nano heterojunction diode: Fabrication and electrical characterization

  • Vinay Kabra,
  • Lubna Aamir and
  • M. M. Malik

Beilstein J. Nanotechnol. 2014, 5, 2216–2221, doi:10.3762/bjnano.5.230

Graphical Abstract
  • concentrations of dopant, but these results were not suitable for the above atomic ratio, which was determined after optimization. Device fabrication The p-type ZnO thin film was formed on the n-type Si substrate using a dip coating technique with an immersion rate of 9 mm/s, a dwell time of 20 s, and a
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Published 24 Nov 2014

Electronic and electrochemical doping of graphene by surface adsorbates

  • Hugo Pinto and
  • Alexander Markevich

Beilstein J. Nanotechnol. 2014, 5, 1842–1848, doi:10.3762/bjnano.5.195

Graphical Abstract
  • shifts the resistance peak to negative Vg showing that toluene acts as n-type dopant on graphene, Figure 8b. It is worth emphasizing that redox reactions are slow and thus graphene needs to be exposed to toluene for long periods of about 1 h for a doping effect to be seen. Furthermore, hysteresis is
  • relative position of the highest occupied (HOMO) and lowest unoccupied (LUMO) molecular orbitals of an adsorbate to the Fermi level of graphene for a) p-type and b) n-type dopant. Conductivity as a function of the gate voltage (σ(Vg)) of graphene at different exposures to K. The shift of neutrality point
  • pumping out the toluene vapour. The shift of the resistance peak towards negative (Vg) after the exposure of toluene indicates that the molecule acts as a n-type dopant. Pumping out the toluene from the chamber removes the hysteresis but the doping effect remains. Reprinted with permission from [24
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Published 23 Oct 2014

Silicon and germanium nanocrystals: properties and characterization

  • Ivana Capan,
  • Alexandra Carvalho and
  • José Coutinho

Beilstein J. Nanotechnol. 2014, 5, 1787–1794, doi:10.3762/bjnano.5.189

Graphical Abstract
  • effects within the NCs [12][13][14][15]. An accurate theory for the dielectric screening is essential to understand the response of nanostructures to an external electro-magnetic field, or the localization of dopant states and excitations. There is consensus now that even for NCs with a diameter as small
  • result in either a quenching or an enhancement of the Si NCs PL, depending on the dopant concentration and NC sizes [28][35]. Crowe et al. [35] have shown that as phosphorus accumulates at the nanocrystal oxide interface it leads to the passivation of the dangling bonds as observed by the luminescence
  • -tetrafluoroquinodimethane) molecule, which is commonly used as a p-dopant in organic electronics, could be a candidate to produce holes in the Si NCs, as shown in Figure 3. They also showed that about three to four molecules adsorbed to the NC surface are able to produce a positively charged NC, although the first
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Published 16 Oct 2014

On the structure of grain/interphase boundaries and interfaces

  • K. Anantha Padmanabhan and
  • Herbert Gleiter

Beilstein J. Nanotechnol. 2014, 5, 1603–1615, doi:10.3762/bjnano.5.172

Graphical Abstract
  • develops due to sliding will change with material chemistry, boundary misorientation, stress, and strain. A way of quantifying the internal stress distribution is then spelled out [54]. It is pointed out here that the effects of composition, atomic arrangement in the oblate spheroid, impurity/solute/dopant
  • summarized in [53][54][55][56][57][60][61][62]. The shear modulus and the free volume present in the basic sliding unit, γ0, (composition, impurity/solute/dopant content dependent) can be determined by using ab initio calculations, in particular the tight binding model, which is computationally less
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Published 22 Sep 2014

Synthesis of hydrophobic photoluminescent carbon nanodots by using L-tyrosine and citric acid through a thermal oxidation route

  • Venkatesh Gude

Beilstein J. Nanotechnol. 2014, 5, 1513–1522, doi:10.3762/bjnano.5.164

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  • effective and low-cost approach. Because of the solubility of hydrophobic CNDs in organic solvents they can be used in thin film applications [34], and as a dopant in liquid crystal research [35]. Here I demonstrate a simple, effective, facile, and low cost approach to fabricate hydrophobic CNDs by using
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Published 11 Sep 2014

Sublattice asymmetry of impurity doping in graphene: A review

  • James A. Lawlor and
  • Mauro S. Ferreira

Beilstein J. Nanotechnol. 2014, 5, 1210–1217, doi:10.3762/bjnano.5.133

Graphical Abstract
  • , which can furthermore be tuned through control of the dopant concentration, but in theory produce quasi-ballistic transport of electrons in the undoped sublattice, both important qualities for any graphene device to be used competetively in future technology. We outline current experimental techniques
  • the system for B and N dopants respectively [15]. Early theoretical attempts at investigating the electronic properties of such a material found that a periodic arrangement of B or N dopants, forming a dopant superlattice, would open a band gap [16], but that a random distribution of dopants among
  • capable of achieving nitrogen dopant concentrations of up to around 10% [30] and with direct applicablity to GFET technology and bio-sensing [28]. Although CVD is one of the more challenging methods, it seems the most reliable option and yields the best quality nitrogen doped graphene sheets [31] and
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Published 05 Aug 2014

Functionalized nanostructures for enhanced photocatalytic performance under solar light

  • Liejin Guo,
  • Dengwei Jing,
  • Maochang Liu,
  • Yubin Chen,
  • Shaohua Shen,
  • Jinwen Shi and
  • Kai Zhang

Beilstein J. Nanotechnol. 2014, 5, 994–1004, doi:10.3762/bjnano.5.113

Graphical Abstract
  • , the exited hole can be trapped more than once, and recombine with the electron excited by another photon. An optimal dopant concentration is therefore crucial. In another example, we also synthesized Fe-doped mesoporous Ta2O5 that showed an enhanced activity compared to the bulk counterpart [17]. It
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Published 09 Jul 2014

Growth and characterization of CNT–TiO2 heterostructures

  • Yucheng Zhang,
  • Ivo Utke,
  • Johann Michler,
  • Gabriele Ilari,
  • Marta D. Rossell and
  • Rolf Erni

Beilstein J. Nanotechnol. 2014, 5, 946–955, doi:10.3762/bjnano.5.108

Graphical Abstract
  • ionically and electronically compensated interfaces, which explains why some semiconductor interfaces cannot be atomically sharp [48]. Recently, Rossell et al. [49] have adopted STEM-EELS combined with multivariate statistical analysis (MSA) to map the distribution of Ba dopant atoms in SrTiO3 nanoparticles
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Published 02 Jul 2014

Biomolecule-assisted synthesis of carbon nitride and sulfur-doped carbon nitride heterojunction nanosheets: An efficient heterojunction photocatalyst for photoelectrochemical applications

  • Hua Bing Tao,
  • Hong Bin Yang,
  • Jiazang Chen,
  • Jianwei Miao and
  • Bin Liu

Beilstein J. Nanotechnol. 2014, 5, 770–777, doi:10.3762/bjnano.5.89

Graphical Abstract
  • -doped graphitic carbon nitride (CNS) nanosheets. During the synthesis, sulfur could be introduced as a dopant into the lattice of carbon nitride (CN). Sulfur doping changed the texture as well as relative band positions of CN. By growing CN on preformed sulfur-doped CN nanosheets, composite CN/CNS
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Published 03 Jun 2014
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