Hexagonal boron nitride: a review of the emerging material platform for single-photon sources and the spin–photon interface

• Stefania Castelletto,
• Faraz A. Inam,
• Shin-ichiro Sato and
• Alberto Boretti

Beilstein J. Nanotechnol. 2020, 11, 740–769, doi:10.3762/bjnano.11.61

• were studied. Here the correlations between material structural features and the location of SPEs from bulk down to the monolayer was studied at room temperature. Chemical etching and ion irradiation are used to generate the SPEs in h-BN various materials. Their photo-dynamics analysis reveals

• ][119] up to high temperatures and in various environments, with an increased number of defects observed with increased temperature; ion beams of various types, such as Si, O, B, boron−nitrogen (BN) complexes [119], He and N at low fluences [45]; chemical etching [45] based on the use of

• ][120] from low to high energy electrons, with the high energy electrons improving the yield and the spatial distribution of the emitters away from the edges in the center of the flake; oxygen plasma etching associated with annealing [121] and in particular a process of only two steps, including Ar

A novel dry-blending method to reduce the coefficient of thermal expansion of polymer templates for OTFT electrodes

• Xiangdong Ye,
• Bo Tian,
• Yuxuan Guo,
• Fan Fan and
• Anjiang Cai

Beilstein J. Nanotechnol. 2020, 11, 671–677, doi:10.3762/bjnano.11.53

• nanoparticles with a particle size of 500 nm are filled into a structure with an etching size of 50 × 30 × 25 μm. Hence, the weight fraction of the SiO2 nanoparticles is calculated according to Equation 1 [20]: Here, ω is the weight fraction of the SiO2 nanoparticles, ρm is the density of SiO2 (2648 kg·m−3 [18

Silver-decorated gel-shell nanobeads: physicochemical characterization and evaluation of antibacterial properties

• Marta Bartel,
• Katarzyna Markowska,
• Marcin Strawski,
• Krystyna Wolska and
• Maciej Mazur

Beilstein J. Nanotechnol. 2020, 11, 620–630, doi:10.3762/bjnano.11.49

• , optoelectronic elements and biomedical devices [18][19]. Polystyrene beads are also a versatile material that can be quite easily functionalized with sulfonic groups. The particles are incubated with concentrated sulfuric acid at elevated temperature, which results in gradual etching of their surface. Through

Luminescent gold nanoclusters for bioimaging applications

• Nonappa

Beilstein J. Nanotechnol. 2020, 11, 533–546, doi:10.3762/bjnano.11.42

• complexes and SCQD-based nanomaterials. To improve the quantum yield and PL, various approaches have been developed including ligand engineering, selective doping to create alloy clusters, aggregation-induced emission, selective etching and self-assembly [48][49][50][51][52][53][54][55][56][57][58]. Ligands

• the cytoplasm as well as in the nucleus. Muhammed et al. reported brightly NIR-emitting Au23 and Au25 NCs using single-phase and biphasic etching of [Au25(SG)18] (Figure 4B) [87]. The Au23 clusters were selectively conjugated with streptavidin for a specific labeling of cells. Here the strong binding

• –Alexa 594 and nuclear dye SYTO 59; scale bar: 25 μm. B) Schematics showing the etching method to prepare luminescent AuNCs and their conjugation with streptavidin. C) (a) Fluorescence, (b) bright-field, (c) and overlay of fluorescent and bright-field images of human hepatoma (HepG2) cells stained with

Multilayer capsules made of weak polyelectrolytes: a review on the preparation, functionalization and applications in drug delivery

• Varsha Sharma and
• Anandhakumar Sundaramurthy

Beilstein J. Nanotechnol. 2020, 11, 508–532, doi:10.3762/bjnano.11.41

• crosslinking without the need of post treatment [55]. Stable multilayered hollow capsules of N-methyl-2-nitro-diphenylamine-4-diazoresin/m-methylphenol-formaldehyde resin (NDR/MPR) on a PS core based on in situ coupling were found to withstand solvent etching without further processing [55]. The reaction

Nanoarchitectonics: bottom-up creation of functional materials and systems

• Katsuhiko Ariga

Beilstein J. Nanotechnol. 2020, 11, 450–452, doi:10.3762/bjnano.11.36

• that were formed by metal-assisted chemical etching (MACE) [27], and the formation of high-tolerance crystalline hydrogels from cyclic dipeptides upon self-assembly [28]. In addition, a review on the use of DNA as the fundamental material building block for molecular and structural engineering [29

An advanced structural characterization of templated meso-macroporous carbon monoliths by small- and wide-angle scattering techniques

• Felix M. Badaczewski,
• Marc O. Loeh,
• Torben Pfaff,
• Dirk Wallacher,
• Daniel Clemens and
• Bernd M. Smarsly

Beilstein J. Nanotechnol. 2020, 11, 310–322, doi:10.3762/bjnano.11.23

• microporosity additional approaches are necessary to further introduce mesoporosity or macroporosity and to tune the pore system. Chemical and physical activation, using reactive agents such as bases (KOH) or gases (CO2), are only capable to enhance the microporosity by etching the carbon skeleton [33][34]. To

Fabrication of Ag-modified hollow titania spheres via controlled silver diffusion in Ag–TiO₂ core–shell nanostructures

• Bartosz Bartosewicz,
• Malwina Liszewska,
• Bogusław Budner,
• Marta Michalska-Domańska,
• Krzysztof Kopczyński and
• Bartłomiej J. Jankiewicz

Beilstein J. Nanotechnol. 2020, 11, 141–146, doi:10.3762/bjnano.11.12

• template was used in the fabrication of rattle-type HSs of Au@TiO2 using multistep template deposition and a surface-protected etching method [13], of TiO2 HSs of mixed anatase/rutile composition loaded with noble metal NPs (Au, Pt, Pd) [14], and of N-doped Ag/TiO2 HSs [15]. A hard-templating method with a

Influence of the epitaxial composition on N-face GaN KOH etch kinetics determined by ICP-OES

• Markus Tautz,
• Maren T. Kuchenbrod,
• Joachim Hertkorn,
• Robert Weinberger,
• Martin Welzel,
• Arno Pfitzner and
• David Díaz Díaz

Beilstein J. Nanotechnol. 2020, 11, 41–50, doi:10.3762/bjnano.11.4

• , Spain 10.3762/bjnano.11.4 Abstract Roughening by anisotropic etching of N-face gallium nitride is the key aspect in today’s production of blue and white light emitting diodes (LEDs). Both surface area and number of surface angles are increased, facilitating light outcoupling from the LED chip. The

• progress in small time increments with high precision. Thereby, the disadvantages of other techniques such as determination of weight loss or height difference were overcome, achieving high accuracy and reproducibility. Keywords: etching; GaN; ICP-OES; KOH; LED; Introduction The light emitting diode (LED

• , surface roughening is an integral part of flip-chip processing. The two approaches towards surface roughening are wet- and dry-chemical etching [11][12]. During wet etching, aqueous KOH and other alkaline or acidic solutions are commonly used to remove GaN from the N-polar surface in an anisotropic manner

Synthesis of amorphous and graphitized porous nitrogen-doped carbon spheres as oxygen reduction reaction catalysts

• Maximilian Wassner,
• Markus Eckardt,
• Andreas Reyer,
• Thomas Diemant,
• Michael S. Elsaesser,
• R. Jürgen Behm and
• Nicola Hüsing

Beilstein J. Nanotechnol. 2020, 11, 1–15, doi:10.3762/bjnano.11.1

• , NCS-1000 = 240 ± 30 nm; g-NCS-550 = 255 ± 35 nm, g-NCS-1000 = 220 ± 30 nm). This is due to the carbonization and decomposition processes taking place at higher reaction temperatures, together with H2 etching as side reaction of the ammonia nitriding [34]. The elemental bulk composition of the NCSs and

Antimony deposition onto Au(111) and insertion of Mg

• Lingxing Zan,
• Da Xing,
• Abdelaziz Ali Abd-El-Latif and
• Helmut Baltruschat

Beilstein J. Nanotechnol. 2019, 10, 2541–2552, doi:10.3762/bjnano.10.245

• small compartment filled with the same electrolyte and separated from main compartment by a capillary. Pt/Ir (90:10) STM tips with a diameter of 0.25 cm were prepared by etching in a 2 M KOH/4 M KSCN bath and coated with hot-melt glue containing different types of polymer (provided by Steinel) to

Label-free highly sensitive probe detection with novel hierarchical SERS substrates fabricated by nanoindentation and chemical reaction methods

• Jingran Zhang,
• Tianqi Jia,
• Yongda Yan,
• Li Wang,
• Peng Miao,
• Yimin Han,
• Xinming Zhang,
• Guangfeng Shi,
• Yanquan Geng,
• Zhankun Weng,
• Daniel Laipple and
• Zuobin Wang

Beilstein J. Nanotechnol. 2019, 10, 2483–2496, doi:10.3762/bjnano.10.239

• etching. For instance, Chen et al. [8] employed an electrochemical etching method to fabricate nanocube structures on a Cu30Mn70 surface by controlling the voltage. In addition, Zhang et al. [10] showed that gold nanoparticles can be fabricated by a gold etchant on a silicon surface as SERS substrates

• minutes in AgNO3 solution. When the etching time is increased, the clustering structures are gradually generated due to the increased dimension of Ag nanoparticles. Figure 2a shows SEM images of arrayed triangular cavities with fx = 2 μm and fy = 2 μm at an etching time of 10 minutes in AgNO3 solution

• solution and Ag nanoparticles are formed on the different positions of the single crystal copper surface. The single crystal copper surface becomes rougher and more defects are formed after the etching process. Furthermore, the defects of the internal cavities and the pile-ups are much more than on the

Deterministic placement of ultra-bright near-infrared color centers in arrays of silicon carbide micropillars

• Stefania Castelletto,
• Abdul Salam Al Atem,
• Faraz Ahmed Inam,
• Hans Jürgen von Bardeleben,
• Sophie Hameau,
• Ahmed Fahad Almutairi,
• Gérard Guillot,
• Shin-ichiro Sato,
• Alberto Boretti and
• Jean Marie Bluet

Beilstein J. Nanotechnol. 2019, 10, 2383–2395, doi:10.3762/bjnano.10.229

• ], nanopillars in 4H-SiC formed by reactive ion etching (RIE) for the improvement of the VSi emission collection efficiency [50], and the use of a solid immersion lens (SIL) for an enhancement factor of three of single VSi [4]. Recent results of the successful enhancement of VSi in 4H-SiC based on nanopillars

• . In particular N. Terrier for the UV photolithography, R. Mazurczyk for the ICP etching and S. Brottet for SEM imaging. We thank Mr. D. Stavrevski for the technical support with the confocal microscopes at the ARC Centre of Excellence for Nanoscale Biophotonics, School of Applied Science, RMIT

Integration of sharp silicon nitride tips into high-speed SU8 cantilevers in a batch fabrication process

• Nahid Hosseini,
• Matthias Neuenschwander,
• Oliver Peric,
• Santiago H. Andany,
• Jonathan D. Adams and
• Georg E. Fantner

Beilstein J. Nanotechnol. 2019, 10, 2357–2363, doi:10.3762/bjnano.10.226

• (LSNT). Pyramidal tips are made based on an indirect tip fabrication process [28] by etching a mould into a 380 µm thick single-side polished silicon (100) wafer. Figure 1a shows the summarized process flow, outlining the important steps. (i) A 20 nm LSNT thin film is layered onto a silicon (100) wafer

• by low-pressure chemical vapor deposition. Circular openings (20 µm diameter) are then cut into the layer by electron-beam lithography. The LSNT mask is dry-etched before the moulds are structured by anisotropic KOH (40% at 60 °C) etching. The formation of {111} facets results in four-sided pyramidal

• silicon oxide and the LSNT layers are patterned by photolithography to cover only the etched pits. (iv) Deep reactive ion etching (DRIE) is used to etch the silicon vertically and laterally (4 and 1 µm, respectively) in order to provide access for the SU8 polymer to fill the base of the tips in the

Adsorption and desorption of self-assembled L-cysteine monolayers on nanoporous gold monitored by in situ resistometry

• Elisabeth Hengge,
• Eva-Maria Steyskal,
• Rupert Bachler,
• Alexander Dennig,
• Bernd Nidetzky and
• Roland Würschum

Beilstein J. Nanotechnol. 2019, 10, 2275–2279, doi:10.3762/bjnano.10.219

• ); voltammetry; Findings Nanoporous gold, produced by selective etching of the less noble component of a AuAg master alloy (also known as dealloying), is a very promising material in many applications due to its three-dimensional nanoporous structure. Among many other technological applications as sensing [1][2

Nitrogen-vacancy centers in diamond for nanoscale magnetic resonance imaging applications

• Alberto Boretti,
• Lorenzo Rosa,
• Jonathan Blackledge and
• Stefania Castelletto

Beilstein J. Nanotechnol. 2019, 10, 2128–2151, doi:10.3762/bjnano.10.207

• contribution in these NDs is due to nearby nitrogen impurities rather than surface states. Improved ND NV center electron spin properties were obtained in [48] by a room-temperature near-field etching method. This is based on application of a He–Cd ultraviolet laser (325 nm), which has a longer wavelength than

The importance of design in nanoarchitectonics: multifractality in MACE silicon nanowires

• Stefania Carapezzi and
• Anna Cavallini

Beilstein J. Nanotechnol. 2019, 10, 2094–2102, doi:10.3762/bjnano.10.204

• design through suited statistical analysis tools. Results: We have investigated the self-assembly bundling process of nanowires fabricated by metal-assisted chemical etching (MACE). First, we have applied theoretical models in order to obtain a quantitative estimation of the driving forces leading to

• conditions and the capacity dimension of the nanowires was obtained. Keywords: atomic force microscopy (AFM); capillary force; metal-assisted chemical etching (MACE); multifractal analysis; nanoarchitectonics; nanowires; self-assembly; Introduction In the last years, huge progress was made regarding the

• in the industry. The top-down methods involve the use of both dry [9][10] and wet etching [11] to carve nanostructures from a substrate. Metal-assisted chemical etching (MACE) [12][13][14][15] has gained particular attention in this regard, because it is simple, of low cost and versatile. MACE is an

Development of a new hybrid approach combining AFM and SEM for the nanoparticle dimensional metrology

• Loïc Crouzier,
• Alexandra Delvallée,
• Sébastien Ducourtieux,
• Laurent Devoille,
• Guillaume Noircler,
• Christian Ulysse,
• Olivier Taché,
• Elodie Barruet,
• Christophe Tromas and
• Nicolas Feltin

Beilstein J. Nanotechnol. 2019, 10, 1523–1536, doi:10.3762/bjnano.10.150

• silicon wafers. The technique is based on using a direct-writing system (Raith-Vistec EBPG 5000+ electron-beam lithography system) and PMMA resist. After developing, the mask is transferred using RIE (reactive-ion etching). The P900H60 grating is used as a transfer standard and was calibrated by means of

• -writing system and a PMMA resin in which various patterns are then made by reactive ion etching (RIE). Some tests were also carried out with lift-off techniques for metallic deposition, but the results were found to be less conclusive for the deposit. Results and Discussion Repeatability of AFM and SEM

Growth of lithium hydride thin films from solutions: Towards solution atomic layer deposition of lithiated films

• Ivan Kundrata,
• Karol Fröhlich,
• Lubomír Vančo,
• Matej Mičušík and
• Julien Bachmann

Beilstein J. Nanotechnol. 2019, 10, 1443–1451, doi:10.3762/bjnano.10.142

• calibration routine and the internal Au, Ag and Cu standards supplied with the K-Alpha system. Argon etching was done with ion gun (1.4 µA of 2 keV Ar+ ions over 8 mm2). The samples indented to be used in XPS and Auger were coated with an additional layer of SiO2 inside of the deposition chamber. This

• protective layer of about 2 nm was sputtered away during measurements. However, the protection was unsuccessful. O2 and CO2 diffused in through to the film, which was proven by XPS measurements showing Li2O and Li2CO3 after etching. This is described below in Table 1 and discussed further in subsection

• more pronounced after the removal of the top 2 nm of the sample surface through Ar etching during XPS measurements (Table 1). After etching, also the stoichiometry of CO3 becomes more clear, because signals from surface contaminations overlapping this signal in the C 1s spectrum, such as carboxyl

A biomimetic nanofluidic diode based on surface-modified polymeric carbon nitride nanotubes

• Kai Xiao,
• Baris Kumru,
• Lu Chen,
• Lei Jiang,
• Bernhard V. K. J. Schmidt and
• Markus Antonietti

Beilstein J. Nanotechnol. 2019, 10, 1316–1323, doi:10.3762/bjnano.10.130

• nanotube membrane was immersed in 1 M acid for chemical etching (72 h), then cleaned by deionized water and dried in an oven at 60 °C. Modification: In a similar manner as described in our previous paper [39], 1 g of AHPA solution (40 wt % in water) and 1 g of deionized water were mixed (or 1 g of

Fabrication of phase masks from amorphous carbon thin films for electron-beam shaping

• Lukas Grünewald,
• Dagmar Gerthsen and
• Simon Hettler

Beilstein J. Nanotechnol. 2019, 10, 1290–1302, doi:10.3762/bjnano.10.128

• phase masks Fabrication of SixNy membranes and aC film deposition A 200 µm thick Si wafer with 120 nm thick low-stress SixNy coating on both sides was used as base material. Optical lithography and etching methods for SixNy and Si were applied to produce free-standing SixNy thin films (Figure 1

• ). Pyramid-shaped trenches are generated beneath the thin films by anisotropic wet-etching of Si in a heated KOH solution (KOH + H2O in a ratio of 2:3, 80 °C, Figure 1a,c). The lithography mask was designed such that a 3 × 3 array of square-shaped SixNy thin films was produced on a single wafer (Figure 1b,c

• . Apertures and thickness profiles were structured with the Ga ion beam of a Helios G4 FX SEM/FIB dual-beam instrument (Thermo Fischer Scientific). The Ga ion energy was set to 30 keV in all applications. Samples after optical lithography and etching. (a) Scheme of side view of a single membrane. The sketch

Electroluminescence and current–voltage measurements of single-(In,Ga)N/GaN-nanowire light-emitting diodes in a nanowire ensemble

• David van Treeck,
• Johannes Ledig,
• Gregor Scholz,
• Jonas Lähnemann,
• Mattia Musolino,
• Abbes Tahraoui,
• Oliver Brandt,
• Andreas Waag,
• Henning Riechert and
• Lutz Geelhaar

Beilstein J. Nanotechnol. 2019, 10, 1177–1187, doi:10.3762/bjnano.10.117

• solution of hydrogen silsesquioxane (HSQ). Subsequently, the upper 70 nm of the p-type segments of the NWs were uncovered by dry etching with CHF3 and a 120 nm thick indium tin oxide (ITO) layer was sputtered onto the NW tips. Finally, Ti/Au bonding pads and an Al/Au n-type contact were deposited on the

Concurrent nanoscale surface etching and SnO₂ loading of carbon fibers for vanadium ion redox enhancement

• Jun Maruyama,
• Shohei Maruyama,
• Tomoko Fukuhara,
• Toru Nagaoka and
• Kei Hanafusa

Beilstein J. Nanotechnol. 2019, 10, 985–992, doi:10.3762/bjnano.10.99

• recently, a technique for nanoscale and uniform surface etching of the carbon fiber surface was developed and a significant enhancement of the negative electrode reaction of vanadium redox flow batteries was attained, although the enhancement was limited to the positive electrode reaction. In this study

• single heat-treatment step. The subsequent thermal oxidation concurrently achieved nanoscale surface etching and loading with SnO2 nanoparticles. The nanoscale-etched and SnO2-loaded surface was characterized by field-emission scanning electron microscopy (FESEM), Raman spectroscopy, and X-ray

• nanoparticles; redox flow batteries; surface etching; Introduction Redox flow batteries (RFBs) are energy conversion and storage devices that involve the reduction and oxidation of electroactive species in electrolyte solutions and have attracted much attention due to their scalability and safety. Various

Experimental study of an evanescent-field biosensor based on 1D photonic bandgap structures

• Jad Sabek,
• Francisco Javier Díaz-Fernández,
• Luis Torrijos-Morán,
• Zeneida Díaz-Betancor,
• Ángel Maquieira,
• María-José Bañuls,
• Elena Pinilla-Cienfuegos and
• Jaime García-Rupérez

Beilstein J. Nanotechnol. 2019, 10, 967–974, doi:10.3762/bjnano.10.97

• silsesquioxane (HSQ) resist layer. Then, the layout was transferred to the top 220 nm thick silicon layer of the SOI chip by means of inductively coupled plasma etching. 70 nm deep shallow etch 1D grating couplers were created for accessing the photonic chip. Finally, the chip is covered with a 400 nm thick SiO2

Structural and optical properties of penicillamine-protected gold nanocluster fractions separated by sequential size-selective fractionation

• Xiupei Yang,
• Zhengli Yang,
• Fenglin Tang,
• Jing Xu,
• Maoxue Zhang and
• Martin M. F. Choi

Beilstein J. Nanotechnol. 2019, 10, 955–966, doi:10.3762/bjnano.10.96

• of the AuNCs can be improved to some extent by changing the ratio of the initial reactants (Au and ligand) and the synthesis conditions, or by other means such as heating [9], etching [10], and annealing [11], these methods are difficult to precisely control the size of the products. In addition, for