Analytical development and optimization of a graphene–solution interface capacitance model

• Hediyeh Karimi,
• Rasoul Rahmani,
• Reza Mashayekhi,
• Leyla Ranjbari,
• Amir H. Shirdel,
• Niloofar Haghighian,
• Parisa Movahedi,
• Moein Hadiyan and
• Razali Ismail

Beilstein J. Nanotechnol. 2014, 5, 603–609, doi:10.3762/bjnano.5.71

• important properties of field effect transistors (FETs) is in our focus. The quantum capacitance of electrolyte-gated transistors (EGFETs) along with a relevant equivalent circuit is suggested in terms of Fermi velocity, carrier density, and fundamental physical quantities. The analytical model is compared

• reach up to 200,000 cm2/V·s with a typical carrier concentration of 2·1011 cm−2 [7][14]. Recently attempts have also been made to use graphene as a novel channel material in field effect transistors (FETs) for electronics [15]. The remarkable properties of graphene reported so far included high

CoPc and CoPcF₁₆ on gold: Site-specific charge-transfer processes

• Fotini Petraki,
• Heiko Peisert,
• Johannes Uihlein,
• Umut Aygül and
• Thomas Chassé

Beilstein J. Nanotechnol. 2014, 5, 524–531, doi:10.3762/bjnano.5.61

• light-emitting diodes, field-effect transistors, solar cells, and spintronic devices have been in the focus of research [1][2][3][4]. For several transition metal phthalocyanine (TMPc) layers on noble metal surfaces (e.g., Au and Ag) a charge transfer toward the central metal atom has been reported

Tensile properties of a boron/nitrogen-doped carbon nanotube–graphene hybrid structure

• Kang Xia,
• Haifei Zhan,
• Ye Wei and
• Yuantong Gu

Beilstein J. Nanotechnol. 2014, 5, 329–336, doi:10.3762/bjnano.5.37

• for the application as fuel cell electrocatalyst, in field-effect transistors, and in lithium batteries. Thus, especially N-doped nanotube–graphene hybrid structures have been envisioned to have promising potential applications in the field of catalysis, gas storage and energy storage [16]. The

Apertureless scanning near-field optical microscopy of sparsely labeled tobacco mosaic viruses and the intermediate filament desmin

• Alexander Harder,
• Mareike Dieding,
• Volker Walhorn,
• Sven Degenhard,
• Andreas Brodehl,
• Christina Wege,
• Hendrik Milting and
• Dario Anselmetti

Beilstein J. Nanotechnol. 2013, 4, 510–516, doi:10.3762/bjnano.4.60

• as the formation of TMV-based semiconductive ZnO composites in field effect transistors [30]. Modifications of the viral shell proteins allow the introduction of target-oriented chemical functionalities on the nanotube surface [31]. By means of fluorescent labeling these modifications can now easily

A highly pH-sensitive nanowire field-effect transistor based on silicon on insulator

• Denis E. Presnov,
• Sergey V. Amitonov,
• Pavel A. Krutitskii,
• Valentina V. Kolybasova,
• Igor A. Devyatov,
• Vladimir A. Krupenin and
• Igor I. Soloviev

Beilstein J. Nanotechnol. 2013, 4, 330–335, doi:10.3762/bjnano.4.38

• ; Introduction Over the past decade experimental and theoretical studies of semiconductor nanowire field-effect transistors (NW FET) made of silicon on insulator (SOI) have been of great interest to researchers. The large surface-to-volume ratio of the nanowire allows one to create extremely sensitive charge

High-resolution electrical and chemical characterization of nm-scale organic and inorganic devices

• Pierre Eyben

Beilstein J. Nanotechnol. 2013, 4, 318–319, doi:10.3762/bjnano.4.35

• increase in “More than Moore” developments targeting energy (photovoltaic, energy storage), imaging (e.g., quantitative medical imaging), sensor/actuators linked to CMOS-base circuitry, biochips, etc. The utilization of graphene in order to process high mobility (both for holes and electrons) field-effect

• transistors is also being intensively studied. In all these cases, metrology is a challenge, and no universal solution is identifiable. Moreover in many cases it becomes also very difficult to establish a complete assessment of accuracy, precision and spatial resolution due to a lack of appropriate 3-D

Pinch-off mechanism in double-lateral-gate junctionless transistors fabricated by scanning probe microscope based lithography

• Farhad Larki,
• Arash Dehzangi,
• Alam Abedini,
• Ahmad Makarimi Abdullah,
• Elias Saion,
• Sabar D. Hutagalung,
• Mohd N. Hamidon and
• Jumiah Hassan

Beilstein J. Nanotechnol. 2012, 3, 817–823, doi:10.3762/bjnano.3.91

• structures using 3-D TCAD simulation results. The analysis presented shows that the device can be considered as a simple FET device that includes no doping concentration gradient and no junction. Unlike the accumulation metal–oxide–semiconductor field-effect transistors (AMOSFETs) and junctionless nanowire

Influence of the diameter of single-walled carbon nanotube bundles on the optoelectronic performance of dry-deposited thin films

• Kimmo Mustonen,
• Toma Susi,
• Antti Kaskela,
• Patrik Laiho,
• Ying Tian,
• Albert G. Nasibulin and
• Esko I. Kauppinen

Beilstein J. Nanotechnol. 2012, 3, 692–702, doi:10.3762/bjnano.3.79

• : bundle diameter; sheet resistance; SWCNT; thin film; transmittance; Introduction Single-walled carbon nanotubes (SWCNT) offer great application potential in future electronics, such as micro-electromechanical devices [1], sensors [2][3], transparent electrodes [4][5][6], thin-film field-effect

• transistors [7][8] and capacitors [9]. However, most methods of fabricating devices rely on dispersion of the nanotubes in solutions. While the techniques are suitable for research, process-induced damage, such as tube cutting due to sonication [10][11], or residual surfactants severely limit device

Self-assembled monolayers and titanium dioxide: From surface patterning to potential applications

• Yaron Paz

Beilstein J. Nanotechnol. 2011, 2, 845–861, doi:10.3762/bjnano.2.94

• hybrid microelectronic systems containing titanium dioxide together with organic components. Along this line, the improvement of the performance of organic field-effect transistors

Optical properties of fully conjugated cyclo[n]thiophenes – An experimental and theoretical approach

• Elena Mena-Osteritz,
• Fan Zhang,
• Günther Götz,
• Peter Reineker and
• Peter Bäuerle

Beilstein J. Nanotechnol. 2011, 2, 720–726, doi:10.3762/bjnano.2.78

• organic field-effect transistors, organic solar cells, and sensors [1][2][3][4]. Typically, such π-conjugated systems comprise extended linear one-dimensional (1D) structures showing interesting optoelectronic properties. In the solid state they represent organic semiconductors, whereas by doping with

Terthiophene on Au(111): A scanning tunneling microscopy and spectroscopy study

• Berndt Koslowski,
• Anna Tschetschetkin,
• Norbert Maurer,
• Elena Mena-Osteritz,
• Peter Bäuerle and
• Paul Ziemann

Beilstein J. Nanotechnol. 2011, 2, 561–568, doi:10.3762/bjnano.2.60

• semiconductors. Especially, oligothiophenes are very promising candidates for molecular electronics and have been exploited to form organic field-effect transistors [1][2], optical switches [3], light emitting diodes [4], and solar cells [5][6][7]. To optimize the performance of such devices, the properties of

Organic–inorganic nanosystems

• Paul Ziemann

Beilstein J. Nanotechnol. 2011, 2, 363–364, doi:10.3762/bjnano.2.41

• , doped π-conjugated oligomers and polymers play an important role due to their semiconducting behavior. As in standard electronics, the combination of p- and n-doped organic components leads to device applications such as organic light emitting diodes (OLED), organic field effect transistors (OFET) and