Precise in situ etch depth control of multilayered III−V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment

• Ann-Kathrin Kleinschmidt,
• Lars Barzen,
• Johannes Strassner,
• Christoph Doering,
• Henning Fouckhardt,
• Wolfgang Bock,
• Michael Wahl and
• Michael Kopnarski

Beilstein J. Nanotechnol. 2016, 7, 1783–1793, doi:10.3762/bjnano.7.171

• ], known from various studies on epitaxial growth, or on surface roughness due to ion bombardment [9][39][40][41]. Also, information on the composition of compound semiconductors [1] as well as the doping of the etched layers (related to the offset/mean value of the Fabry–Perot oscillations) are included

Numerical investigation of depth profiling capabilities of helium and neon ions in ion microscopy

• Patrick Philipp,
• Lukasz Rzeznik and
• Tom Wirtz

Beilstein J. Nanotechnol. 2016, 7, 1749–1760, doi:10.3762/bjnano.7.168

• profiling; helium ion microscopy; ion bombardment; numerical simulations; polymers; SDTRIMSP; Introduction Ion bombardment of polymer samples has been studied for various applications related to surface modifications and surface analysis. Ion bombardment of polymers allows to change the electric

• + irradiation of polyimide (PI) and polyethersulfone improves the moisture uptake in the films [7]. Further applications include metal adhesion on polymer surface [8], novel inorganic films by ion bombardment of polymers [9], surface morphology for biocompatibility [10], etch resistance of polymers [11

• ], processes for graphene based electronics, the preparation of ultra-hydrophobic fluorine polymers by Ar-ion bombardment [12], and ion implantation to form nanoparticles inside polymers [13]. Common to the different applications is the damage created by the energetic ions upon their implantation in the

Experimental and simulation-based investigation of He, Ne and Ar irradiation of polymers for ion microscopy

• Lukasz Rzeznik,
• Yves Fleming,
• Tom Wirtz and
• Patrick Philipp

Beilstein J. Nanotechnol. 2016, 7, 1113–1128, doi:10.3762/bjnano.7.104

• HIM has been developed for high resolution electron microscopy and nanofabrication using the He+ or Ne+-emitting atomic level ion source (ALIS) [4]. Compared to cluster ion bombardment, the use of monoatomic primary ion species (such as Cs+, O−, Ga+) for imaging in SIMS allows significantly higher

• of the sample under ion bombardment is obtained. As an example, one may cite molecular dynamics (MD) simulations of Ar+ irradiation on a benzene overlayer on a Ni(001) surface [17] and on an ethylidyne (C2H3) overlayer on a Pt(111) substrate [18]. Ion bombardment on polymers was reported first for 1

• keV Ar bombardment on polyethylene [19]. Both single impacts and 5 consecutive impacts were carried out with an incidence angle of 60° on systems with 52 Å × 49 Å × 42 Å and 37 Å × 40 Å × 42 Å, respectively. This corresponds approximately to a fluence of 3 × 1013 atoms/cm2. The ion bombardment causes

Microscopic characterization of Fe nanoparticles formed on SrTiO₃(001) and SrTiO₃(110) surfaces

• Miyoko Tanaka

Beilstein J. Nanotechnol. 2016, 7, 817–824, doi:10.3762/bjnano.7.73

• reconstructions and buffer layers, and using ion bombardment [11][12][13][14][15]. For example, Silly et al. successfully controlled shapes of nanoparticles by tuning the reconstruction of a STO(001) substrate and the substrate temperature during deposition [12]. Sun et al. also controlled shapes of nanoparticles

High sensitivity and high resolution element 3D analysis by a combined SIMS–SPM instrument

• Yves Fleming and
• Tom Wirtz

Beilstein J. Nanotechnol. 2015, 6, 1091–1099, doi:10.3762/bjnano.6.110

• reconstructions do not consider the sample surface topography, because these protocols and the applied software assume a flat sample surface as well as a cube-like analysed volume [6]. In reality, samples exhibit a surface roughness, which is also changed during the ion bombardment, because parameters such as

Morphology, structural properties and reducibility of size-selected CeO_2−x nanoparticle films

• Maria Chiara Spadaro,
• Sergio D’Addato,
• Gabriele Gasperi,
• Francesco Benedetti,
• Paola Luches,
• Vincenzo Grillo,
• Giovanni Bertoni and
• Sergio Valeri

Beilstein J. Nanotechnol. 2015, 6, 60–67, doi:10.3762/bjnano.6.7

• thermal treatments and sputtered by ion bombardment before the measurements. Results and Discussion Figure 2 shows SEM images of NPs with different size values, and STM images of the epitaxial and non-epitaxial film. The 9 nm NPs (Figure 2b) are clearly visible and well dispersed, and it was possible to

Synthesis of Pt nanoparticles and their burrowing into Si due to synergistic effects of ion beam energy losses

• Pravin Kumar,
• Udai Bhan Singh,
• Kedar Mal,
• Sunil Ojha,
• Indra Sulania,
• Dinakar Kanjilal,
• Dinesh Singh and
• Vidya Nand Singh

Beilstein J. Nanotechnol. 2014, 5, 1864–1872, doi:10.3762/bjnano.5.197

• silicon surfaces (cut from the same sample) joined face-to-face with glue (epoxy/adhesive substance). The range of 50 keV neon ions in Si is ≈107 nm with a longitudinal straggling of ≈46 nm. Therefore, one can expect a modified region of ≈130 nm below the surface upon ion bombardment. However, an

Synthesis of embedded Au nanostructures by ion irradiation: influence of ion induced viscous flow and sputtering

• Udai B. Singh,
• D. C. Agarwal,
• S. A. Khan,
• S. Mohapatra,
• H. Amekura,
• D. P. Datta,
• Ajay Kumar,
• R. K. Choudhury,
• T. K. Chan,
• Thomas Osipowicz and
• D. K. Avasthi

Beilstein J. Nanotechnol. 2014, 5, 105–110, doi:10.3762/bjnano.5.10

• of Au in the film is less than unity. It is observed from the depth profile of the irradiated sample that Au atoms are completely buried into the substrate down to 14 nm from the top layer of the glass substrate. In the present case, Au NPs embedded in glass are formed due to the ion bombardment on

• amount of sputtered metal in the simulation is 15.21 × 1015 atoms/cm2. From the simulation results, it can be clearly observed that the recoil implantation and sputtering take place simultaneously during ion bombardment of Au film. However, it is not in complete agreement with the obtained depth profile

• embedding of NPs result from the different surface energies, i.e., the surface energy of the particle and its substrate, and the particle–substrate interface energy. It is reported that surface energy of embedded NPs is less than the surface energy of both glass and NPs [23]. The ion bombardment provides

Challenges in realizing ultraflat materials surfaces

• Takashi Yatsui,
• Wataru Nomura,
• Fabrice Stehlin,
• Olivier Soppera,
• Makoto Naruse and
• Motoichi Ohtsu

Beilstein J. Nanotechnol. 2013, 4, 875–885, doi:10.3762/bjnano.4.99

• a clustered ion beam to reduce the surface damage can lead to ultraflat surfaces of several hundred mm in diameter with a small Ra of 1 Å [16]. Although ion-beam smoothing does not require a polishing pad, it can still cause damage due to ion bombardment, and this technique also requires high-vacuum

Digging gold: keV He⁺ ion interaction with Au

• Vasilisa Veligura,
• Gregor Hlawacek,
• Robin P. Berkelaar,
• Raoul van Gastel,
• Harold J. W. Zandvliet and
• Bene Poelsema

Beilstein J. Nanotechnol. 2013, 4, 453–460, doi:10.3762/bjnano.4.53

• heal the defects. That process can be enhanced by in situ heating of a sample during ion bombardment. We mention, that the surface modification depends not only on the final fluence, but also on the speed at which it was generated. With an increase of the dose per scan, the modifications occur more

• , at low ion fluences helium ions can occupy existing crystal defects and interatomic positions without causing a substantial volume increase. The subsequent fluence increase leads to the creation of helium nanobubbles in the bulk gold. The formation of voids in metals due to He+ ion bombardment is a

Focused electron beam induced deposition: A perspective

• Michael Huth,
• Fabrizio Porrati,
• Christian Schwalb,
• Marcel Winhold,
• Roland Sachser,
• Maja Dukic,
• Jonathan Adams and
• Georg Fantner

Beilstein J. Nanotechnol. 2012, 3, 597–619, doi:10.3762/bjnano.3.70

• ) [29]. PtSi thin films become superconducting below Tc = 0.56 K [30]. A second Pt–Si phase of relevance for the present discussion is Pt2Si3, which is metastable and was found to form by annealing PtSi thin films of typically 30 nm thickness after Xe+ ion bombardment at 300 keV (integrated flux 1

Plasmonic nanostructures fabricated using nanosphere-lithography, soft-lithography and plasma etching

• Manuel R. Gonçalves,
• Taron Makaryan,
• Fabian Enderle,
• Stefan Wiedemann,
• Alfred Plettl,
• Othmar Marti and
• Paul Ziemann

Beilstein J. Nanotechnol. 2011, 2, 448–458, doi:10.3762/bjnano.2.49

• otherwise flat area, an additional ion bombardment step had to be implemented. For this purpose, Ar+ sputter cleaning (3.5 μA/cm2, 3 kV, at a grazing angle of 10°) for typically 20 min proved to be suitable, as demonstrated in the right electron microscopy image of Figure 6. Compared to etched samples

Oriented growth of porphyrin-based molecular wires on ionic crystals analysed by nc-AFM

• Thilo Glatzel,
• Lars Zimmerli,
• Shigeki Kawai,
• Ernst Meyer,
• Leslie-Anne Fendt and
• Francois Diederich

Beilstein J. Nanotechnol. 2011, 2, 34–39, doi:10.3762/bjnano.2.4

• techniques by several cycles of Ar+ ion bombardment and subsequent annealing to 520 °C. KBr thin films were deposited on the clean Cu(111) substrates by sublimation, using a temperature controlled Knudsen cell. As a source material, crushed salt powder obtained from alkali halide single crystals was used. In

Preparation and characterization of supported magnetic nanoparticles prepared by reverse micelles

• Ulf Wiedwald,
• Luyang Han,
• Johannes Biskupek,
• Ute Kaiser and
• Paul Ziemann

Beilstein J. Nanotechnol. 2010, 1, 24–47, doi:10.3762/bjnano.1.5