A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

• Frances I. Allen

Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52

3D superconducting hollow nanowires with tailored diameters grown by focused He⁺ beam direct writing

• Rosa Córdoba,
• Alfonso Ibarra,
• Dominique Mailly,
• Isabel Guillamón,
• Hermann Suderow and
• José María De Teresa

Beilstein J. Nanotechnol. 2020, 11, 1198–1206, doi:10.3762/bjnano.11.104

• manufacturing methods. The electron tomography study proved that the center hole is present along the whole length of the NWs. As expected, the microstructure corresponds to the fcc WC1−x phase. By studying their magnetotransport properties, we found Tc ≈ 6.8 K, as well as µ0Hc2 ≈ 14.7 T and Jc ≈ 0.15 MA/cm2

High-temperature magnetism and microstructure of a semiconducting ferromagnetic (GaSb)_1−x(MnSb)_x alloy

• Leonid N. Oveshnikov,
• Elena I. Nekhaeva,
• Alexey V. Kochura,
• Alexander B. Davydov,
• Mikhail A. Shakhov,
• Sergey F. Marenkin,
• Oleg A. Novodvorskii,
• Alexander P. Kuzmenko,
• Alexander L. Vasiliev,
• Boris A. Aronzon and
• Erkki Lahderanta

Beilstein J. Nanotechnol. 2018, 9, 2457–2465, doi:10.3762/bjnano.9.230

• . This is in good agreement with the high mobility values of charge carriers. Based on our data we conclude that the magnetic and magnetotransport properties of the films at room temperature are defined by the MnSb inclusions. Keywords: anomalous Hall effect; high-temperature ferromagnetism

• to H = 50 kOe using a superconducting quantum interference device (SQUID) magnetometer S600X (Cryogenic, UK). The electrical and magnetotransport properties were investigated at temperatures of T = 2–320 K using a standard six-probe geometry in pulsed magnetic fields up to H = 300 kOe. The studied

• mobility values have no pronounced dependence on the carrier concentration (see Table 1), i.e., the conductivity of the studied films is affected by various factors. Thus, magnetotransport phenomena can yield additional information about the system. The results of Hall resistivity measurements for the GM3

Robust midgap states in band-inverted junctions under electric and magnetic fields

• Álvaro Díaz-Fernández,
• Natalia del Valle and
• Francisco Domínguez-Adame

Beilstein J. Nanotechnol. 2018, 9, 1405–1413, doi:10.3762/bjnano.9.133

• electric field could be measured by means of magnetotransport experiments, a prediction that is confirmed here. Conclusion We have studied band-inverted junctions under crossed electric and magnetic fields, the electric field being applied along the growth direction. Electron states are described by a

Ultrasmall magnetic field-effect and sign reversal in transistors based on donor/acceptor systems

• Thomas Reichert and
• Tobat P. I. Saragi

Beilstein J. Nanotechnol. 2017, 8, 1104–1114, doi:10.3762/bjnano.8.112

• transport but also the magnetotransport behaviour. For small Vd and for devices containing mixing ratios of 51:49 and 78:22 there is a positive magnetoresistance, which decreases with an increase of |Vd| until reaching a sign reversal, as displayed in Figure 2a and 2b. Indications of the voltage-induced

Thickness-modulated tungsten–carbon superconducting nanostructures grown by focused ion beam induced deposition for vortex pinning up to high magnetic fields

• Ismael García Serrano,
• Javier Sesé,
• Isabel Guillamón,
• Hermann Suderow,
• Sebastián Vieira,
• Manuel Ricardo Ibarra and
• José María De Teresa

Beilstein J. Nanotechnol. 2016, 7, 1698–1708, doi:10.3762/bjnano.7.162

• pinning potentials, maximizing the opportunities for the investigation of fundamental aspects in vortex science under changing external stimuli (e.g., temperature, magnetic field, electrical current). Keywords: focused ion beam induced deposition; magnetotransport; superconductivity; vortex lattice

• properties, as shown here. Before describing the designed vortex pinning landscape in the W–C nanostructures, let us mention some specific aspects of vortex pinning in superconductors and the influence on magnetotransport properties, which will be useful to understand our data. The application of external

• and the vortex lattice have been observed up to high magnetic fields and in a broad temperature range. Figure 1 displays the relative arrangement of the current, magnetic field and linear nanostructures in the magnetotransport experiments performed, together with a top-down scanning electron

Magnetic switching of nanoscale antidot lattices

• Ulf Wiedwald,
• Joachim Gräfe,
• Kristof M. Lebecki,
• Maxim Skripnik,
• Felix Haering,
• Gisela Schütz,
• Paul Ziemann,
• Eberhard Goering and
• Ulrich Nowak

Beilstein J. Nanotechnol. 2016, 7, 733–750, doi:10.3762/bjnano.7.65

• mm2 sample used for SQUID magnetometry or magnetotransport measurements. However, slight modifications by FIB cutting offers an easy way to address the anisotropic in-plane properties by means of magnetotransport measurements. This is achieved by channelling the electrical current through a narrow

Effects of spin–orbit coupling and many-body correlations in STM transport through copper phthalocyanine

• Benjamin Siegert,
• Andrea Donarini and
• Milena Grifoni

Beilstein J. Nanotechnol. 2015, 6, 2452–2462, doi:10.3762/bjnano.6.254

• phthalocyanine; magnetotransport; spin–orbit interaction; scanning tunneling microscopy (STM); Introduction Spin–orbit interaction (SOI) can play a major role in molecular spintronics. For example, in combination with the configuration of the non-magnetic component (organic ligand), it is known to be essential

• effective Hamiltonians have been derived microscopically for widely studied molecular magnets such as Fe8, Fe4 and Mn12 [4]. Recently, magnetic anisotropy effects could be directly probed by magnetotransport spectroscopy for Fe4 in quantum-dot setups [5][6]. An interesting question is hence if other classes

• molecular systems with orbital degeneracies have been derived for example in carbon nanotubes [31]. In order to study fingerprints of the SOI under realistic experimental conditions, we have studied the magnetotransport characteristics of a CuPc based junction in an STM setup. To this extent, a generalized