Investigating ripple pattern formation and damage profiles in Si and Ge induced by 100 keV Ar⁺ ion beam: a comparative study

• Indra Sulania,
• Harpreet Sondhi,
• Tanuj Kumar,
• Sunil Ojha,
• G R Umapathy,
• Ambuj Mishra,
• Ambuj Tripathi,
• Richa Krishna,
• Devesh Kumar Avasthi and
• Yogendra Kumar Mishra

Beilstein J. Nanotechnol. 2024, 15, 367–375, doi:10.3762/bjnano.15.33

• subsequently transfers its energy to the atoms of the target material in all the collisions and finally stops. When this energy transfer is sufficient, a displacement of atoms from their equilibrium positions creating a vacancy or a recoil occurs. Alternatively, if the ion energy is high enough such recoils

Choosing a substrate for the ion irradiation of two-dimensional materials

• Egor A. Kolesov

Beilstein J. Nanotechnol. 2019, 10, 531–539, doi:10.3762/bjnano.10.54

• -dimensional materials and as a practical guide on choosing the conditions necessary to obtain certain parameters of irradiated materials. Keywords: 2D materials; defects; hot electrons; ion irradiation; recoils; sputtering; substrate; Introduction Ion irradiation of two-dimensional (2D) materials is a

• Transport of Ions in Matter (TRIM) simulations using 160 MeV Xe ions for the irradiation of graphene on Cu, SiO2/Si and glass leads to negligible overall participation of substrate sputtering and a stronger (but small) role of the substrate recoils. Besides, it was noted that hot electrons generated in the

• irradiated 2D materials. The purpose of the present study is to systematically compare the intensity of defect formation in 2D materials through substrate sputtering, substrate recoils reaching the interface, and generated hot electrons, in order to make it possible to choose the irradiation conditions while

Site-controlled formation of single Si nanocrystals in a buried SiO₂ matrix using ion beam mixing

• Xiaomo Xu,
• Thomas Prüfer,
• Daniel Wolf,
• Hans-Jürgen Engelmann,
• Lothar Bischoff,
• René Hübner,
• Karl-Heinz Heinig,
• Wolfhard Möller,
• Stefan Facsko,
• Johannes von Borany and
• Gregor Hlawacek

Beilstein J. Nanotechnol. 2018, 9, 2883–2892, doi:10.3762/bjnano.9.267

• simulation of the ion beam mixing process taking into account sputtering and accumulation of damage and recoils which lead to a change in stoichiometry. In addition, the latter also allows for complex sample geometries and user defined beam profiles. For the ion beam mixing simulations, only such recoils are

Functional diversity of resilin in Arthropoda

• Jan Michels,
• Esther Appel and
• Stanislav N. Gorb

Beilstein J. Nanotechnol. 2016, 7, 1241–1259, doi:10.3762/bjnano.7.115

• compressed, and then their elastic recoils provide energy for the rapid trochanter movements powering the jump. While fleas perform their jumps just with the hindlegs, snow fleas (Mecoptera, Boreidae) use their hind and middle leg pairs for jumping. They feature four resilin-containing pads, one at each of

Synthesis of Pt nanoparticles and their burrowing into Si due to synergistic effects of ion beam energy losses

• Pravin Kumar,
• Udai Bhan Singh,
• Kedar Mal,
• Sunil Ojha,
• Indra Sulania,
• Dinakar Kanjilal,
• Dinesh Singh and
• Vidya Nand Singh

Beilstein J. Nanotechnol. 2014, 5, 1864–1872, doi:10.3762/bjnano.5.197

• expected for entire irradiation time. Figure 7 shows the distribution of Pt recoils (TRIM calculation/simulation) for 50 keV neon ion irradiation on the Pt–Si system at normal incidence. The TRIM calculation takes an unperturbed system (point defects created by preceding ions are ignored) into account for

• of silicon vacancies. The 50 keV neon ions were irradiated at normal incidence on 5 nm Pt film deposited on silicon substrate. The distribution of Pt recoils (Pt/cm3 per Ne/cm2). The 50 keV neon ions were irradiated at normal incidence on 5 nm Pt film deposited on the silicon substrate. The XRD

Synthesis of embedded Au nanostructures by ion irradiation: influence of ion induced viscous flow and sputtering

• Udai B. Singh,
• D. C. Agarwal,
• S. A. Khan,
• S. Mohapatra,
• H. Amekura,
• D. P. Datta,
• Ajay Kumar,
• R. K. Choudhury,
• T. K. Chan,
• Thomas Osipowicz and
• D. K. Avasthi

Beilstein J. Nanotechnol. 2014, 5, 105–110, doi:10.3762/bjnano.5.10

• into a solid by means of atomic recoils through a thin surface layer of the desired metal when using an ion beam from only one ion source. When an energetic ion strikes a thin film deposited on a substrate, it loses its energy through a sequence of collisions with the atoms in the film. The recoiling

• . Elastic thermal spikes should appear when the recoil energy (ER) falls below the threshold energy (EC), and local spikes are expected to be initiated at the end of such subcascades, far off the ion track and these recoils whenever EC > ED. In his approach, Bolse [28] calculated the overlap possibility of

Digging gold: keV He⁺ ion interaction with Au

• Vasilisa Veligura,
• Gregor Hlawacek,
• Robin P. Berkelaar,
• Raoul van Gastel,
• Harold J. W. Zandvliet and
• Bene Poelsema

Beilstein J. Nanotechnol. 2013, 4, 453–460, doi:10.3762/bjnano.4.53

• unfavorable mass ratio. The sputtering is mainly caused by short-range gold recoils and backscattered helium [22][23]. The presence of the pattern outside of the irradiated area (Figure 1c) is additional evidence of the sputtering by gold recoils. Additionally, the gold interstitials themselves are a source