A distributed active patch antenna model of a Josephson oscillator

• Vladimir M. Krasnov

Beilstein J. Nanotechnol. 2023, 14, 151–164, doi:10.3762/bjnano.14.16

• the optimal net power level ≈I2Rn of several milliwatts [24][27]. It is small enough for obviation of catastrophic self-heating, which is one of the major limiting factors for superconducting devices [17][27]. Simultaneously, it is large enough to enable emission above 1 mW, provided the radiation

Observation of collective excitation of surface plasmon resonances in large Josephson junction arrays

• Roger Cattaneo,
• Mikhail A. Galin and
• Vladimir M. Krasnov

Beilstein J. Nanotechnol. 2022, 13, 1578–1588, doi:10.3762/bjnano.13.132

• ][15][16][17][18]. The performance of Josephson oscillators is limited by impedance mismatch [18][19] and self-heating [13][17][20][21]. Proper device engineering can obviate these obstacles and improve the performance [18]. A single JJ is able to emit EMWs, but with a low power [22]. Therefore

Design aspects of Bi₂Sr₂CaCu₂O_8+δ THz sources: optimization of thermal and radiative properties

• Mikhail M. Krasnov,
• Natalia D. Novikova,
• Roger Cattaneo,
• Alexey A. Kalenyuk and
• Vladimir M. Krasnov

Beilstein J. Nanotechnol. 2021, 12, 1392–1403, doi:10.3762/bjnano.12.103

• range 1–11 THz has been demonstrated for small Bi-2212 mesa structures [14]. The operation of Josephson emitters is limited by two primary obstacles: self-heating and impedance mismatch. Josephson devices stop operating when their temperature exceeds the superconducting critical temperature Tc. Self

• -heating in Bi-2212 mesa structures has been extensively studied [28][29][30][31][32][33][34][35][36][37][38][39]. Although Tc of Bi-2212 may be quite high, up to ≃95 K [28], self-heating is substantial due to the low heat conductance of superconductors. Self-heating limits the maximum bias voltage that

• can be reached without critical overheating of a mesa and, therefore, the maximum achievable frequency and emission power. Furthermore, as pointed out in [40], self-heating creates a general limitation for the maximal achievable emission power for any cryogenic device (not only superconducting

Assessment of the optical and electrical properties of light-emitting diodes containing carbon-based nanostructures and plasmonic nanoparticles: a review

• Keshav Nagpal,
• Erwan Rauwel,
• Frédérique Ducroquet and
• Protima Rauwel

Beilstein J. Nanotechnol. 2021, 12, 1078–1092, doi:10.3762/bjnano.12.80

• % since the last decade. These disadvantages can be surmounted by the addition of a current-spreading layer composed of carbon-based nanomaterials, such as GR and CNT [36]. Carbon-based nanostructures play a dual role at the anode. Light-emitting diodes are self-heating, current-sensitive, and luminously

• intensive light sources. They are also highly dependent on ambient temperatures. The lifetime of LED, in particular OLED, is on an average reduced by 30–50% for each 10 °C rise in temperature. Further, self-heating in LED causes degradation of the active region, which further affects the efficiency and the

• operational lifetime of LED. Therefore, in order to obtain adequate performances from LED, proper thermal management of the device is required. In this regard, graphene at the anode tends to alleviate self-heating issues as it disperses the heat away from the active layer. This in turn also reduces the

Light–matter interactions in two-dimensional layered WSe₂ for gauging evolution of phonon dynamics

• Avra S. Bandyopadhyay,
• Chandan Biswas and
• Anupama B. Kaul

Beilstein J. Nanotechnol. 2020, 11, 782–797, doi:10.3762/bjnano.11.63

• , analysis of the phonon dynamics in 2D WSe2 will shed insights on the impact of self-heating effects in WSe2 to illustrate its utility in electronic, optoelectronic and thermoelectric device platforms in the future. In this work, we demonstrate that exposure to heat on the WSe2 crystallites as generated via

Bidirectional biomimetic flow sensing with antiparallel and curved artificial hair sensors

• Claudio Abels,
• Antonio Qualtieri,
• Toni Lober,
• Alessandro Mariotti,
• Lily D. Chambers,
• Massimo De Vittorio,
• William M. Megill and
• Francesco Rizzi

Beilstein J. Nanotechnol. 2019, 10, 32–46, doi:10.3762/bjnano.10.4

• , various thermal effects on piezoresistors such as friction, self-heating and convection were described. Du et al. proposed an additional temperature resistance that could better compensate for temperature changes [41]. Other authors fabricated temperature compensation circuits together with the strain

A novel copper precursor for electron beam induced deposition

• Caspar Haverkamp,
• George Sarau,
• Mikhail N. Polyakov,
• Ivo Utke,
• Marcos V. Puydinger dos Santos,
• Silke Christiansen and
• Katja Höflich

Beilstein J. Nanotechnol. 2018, 9, 1220–1227, doi:10.3762/bjnano.9.113

• ). Electrical measurements were performed at room temperature using a conventional four-probe setup with a Keithley 2400 source meter. The power dissipation on the deposits was limited to 1 nW to avoid self-heating and changes in atomic composition. The current voltage curve is provided in Supporting

Review: Electrostatically actuated nanobeam-based nanoelectromechanical switches – materials solutions and operational conditions

• Liga Jasulaneca,
• Jelena Kosmaca,
• Raimonds Meija,
• Jana Andzane and
• Donats Erts

Beilstein J. Nanotechnol. 2018, 9, 271–300, doi:10.3762/bjnano.9.29

• current flow through the contact causes immediate strengthening of the nanocontact, which gradually develops until the current density of 10−3–10−2 nA/nm2 (Figure 9b) is reached. Self-heating behaviour in the switching element/electrode contact is determined by a combination of its electrical and thermal

Combined scanning probe electronic and thermal characterization of an indium arsenide nanowire

• Tino Wagner,
• Fabian Menges,
• Heike Riel,
• Bernd Gotsmann and
• Andreas Stemmer

Beilstein J. Nanotechnol. 2018, 9, 129–136, doi:10.3762/bjnano.9.15

• . Keywords: contact resistance; Kelvin probe force microscopy (KFM); nanowire; scanning thermal microscopy (SThM); self-heating; Introduction Electronic and thermal properties of nanoscale devices are innately coupled. The charge carriers in most conductors release energy by scattering at defects or phonons

• active devices both in positive and negative ways. In conventional logic devices, hot spots lead to signal degradation and reliability issues. In certain memristive devices, however, the breaking and formation of bonds upon local self-heating is the basis of their function [2]. The importance of electro

Functional materials for environmental sensors and energy systems

• Michele Penza,
• Anita Lloyd Spetz,
• Albert Romano-Rodriguez and
• Meyya Meyyappan

Beilstein J. Nanotechnol. 2017, 8, 2015–2016, doi:10.3762/bjnano.8.201

• nanomaterials (e.g., nanowires, nanotubes, graphene, metal oxides, carbon nanostructures, large band gap semiconductors, and metals) with new sensing properties (e.g., ppb-level detection, high sensitivity, selectivity) that are self-heating and provide durable operation for low-power devices (tens of μW to

Analysis of self-heating of thermally assisted spin-transfer torque magnetic random access memory

• Austin Deschenes,
• Sadid Muneer,
• Mustafa Akbulut,
• Ali Gokirmak and
• Helena Silva

Beilstein J. Nanotechnol. 2016, 7, 1676–1683, doi:10.3762/bjnano.7.160

• magnetic random access memory (STT-MRAM). Proposed heating methods include modified material stack compositions that result in increased self-heating or external heat sources. In this work we analyze the self-heating process of a standard perpendicular magnetic anisotropy STT-MRAM device through numerical

• tunneling junction. We compare self-heating for different common passivation materials, positive and negative electrical current polarity, and different device thermal anchoring and boundaries resistance configurations. The variations considered are found to result in significant differences in maximum

• . Keywords: FEM modeling; Joule heating; self-heating; spin torque transfer magnetic random access memory (STT-MRAM); thermoelectrics; Introduction Spin torque transfer magnetic random access memory (STT-MRAM), a type of non-volatile memory, functions through the resistance ratio between the parallel (ON

NO gas sensing at room temperature using single titanium oxide nanodot sensors created by atomic force microscopy nanolithography

• Li-Yang Hong and
• Heh-Nan Lin

Beilstein J. Nanotechnol. 2016, 7, 1044–1051, doi:10.3762/bjnano.7.97

• exposure times in Figure 3c are 170, 315, 230 and 370 s.) In comparison with Figure 3b, it takes longer time for the current to return to its original value. The faster recovery (i.e., faster NO desorption) in Figure 3b is caused by the self-heating effect [36][37]. When operating at a larger bias, the

Advances in NO₂ sensing with individual single-walled carbon nanotube transistors

• Kiran Chikkadi,
• Matthias Muoth,
• Cosmin Roman,
• Miroslav Haluska and
• Christofer Hierold

Beilstein J. Nanotechnol. 2014, 5, 2179–2191, doi:10.3762/bjnano.5.227

• individual single-walled carbon nanotube field-effect transistors have been shown to be operational at room temperature with ultra-low power consumption. Sensor recovery within minutes through UV illumination or self-heating has been shown. Improvements in fabrication processes aimed at reducing the impact

• nanotube properties into functional ultra-low power, highly sensitive gas sensors. Keywords: carbon nanotube field-effect transistors (CNFETs); cross-sensitivity; functionalization; gas sensors; hysteresis; low power; selectivity; self-heating; single walled carbon nanotubes; Introduction New materials

Review of nanostructured devices for thermoelectric applications

• Giovanni Pennelli

Beilstein J. Nanotechnol. 2014, 5, 1268–1284, doi:10.3762/bjnano.5.141

• means of a self-heating, self-measuring technique [102]. This technique is based on the principle of 3-ω thermal conductivity measurements [103], already applied to carbon nanotubes [104], and exploits the heat generated in the nanowire by the Joule effect when a current passes through it. The

Characterization of electroforming-free titanium dioxide memristors

• John Paul Strachan,
• J. Joshua Yang,
• L. A. Montoro,
• C. A. Ospina,
• A. J. Ramirez,
• A. L. D. Kilcoyne,
• Gilberto Medeiros-Ribeiro and
• R. Stanley Williams

Beilstein J. Nanotechnol. 2013, 4, 467–473, doi:10.3762/bjnano.4.55

• substrate outside of the window (as checked by scanning electron microscopy). This strongly suggests that the grain growth was initiated by self-heating in the thin film electrode itself. Conclusion We have seen that it is possible to reduce and nearly eliminate many of the damaging effects which had been