Encapsulation of nanoparticles into single-crystal ZnO nanorods and microrods

• Jinzhang Liu,
• Marco Notarianni,
• Llew Rintoul and
• Nunzio Motta

Beilstein J. Nanotechnol. 2014, 5, 485–493, doi:10.3762/bjnano.5.56

• ray in ZnO is about 30 °C. Due to the waveguide effect partial photons would propagate along the nanorod axis direction. Hence inside the nanorod light rays refracted to top upper facet have contribution to the PL signal (Figure 6c). Light rays with different polarizations have different transmittance

Thermal stability and reduction of iron oxide nanowires at moderate temperatures

• Annalisa Paolone,
• Marco Angelucci,
• Stefania Panero,
• Maria Grazia Betti and
• Carlo Mariani

Beilstein J. Nanotechnol. 2014, 5, 323–328, doi:10.3762/bjnano.5.36

• . Thermogravimetry measurements distinctly show the mass reduction due to oxygen loss, and infrared transmittance and core-level photoemission measurements allow to follow the reduction process of the iron ions at different temperatures, showing the chemical reduction to Fe3O4 starting at moderate temperatures

• , which were obtained by heating sample 2 in vacuum (≈10−4 mbar) up to 470 K (sample 3) and up to 560 K (sample 4). The IR transmittance spectra of those samples are reported in Figure 2. Sample 2 shows an IR phonon spectrum that strongly resembles that of hematite, α-Fe2O3 [27], with a smooth

• transmittance between 500 and 650 cm−1 and the broad phonon band centered around 950 cm−1. However, we can observe a minimum of the transmittance around 700 cm−1, which is a fingerprint of maghemite (γ-Fe2O3) [27]. Thus, the clean sample 2 presents features that are typical of a mixture of α- and γ-Fe2O3. The

Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement

• Cathy Bugot,
• Nathanaëlle Schneider,
• Daniel Lincot and
• Frédérique Donsanti

Beilstein J. Nanotechnol. 2013, 4, 750–757, doi:10.3762/bjnano.4.85

• corresponds to the thickest film. In general it can be said that the thinner the films, the lower the FWHM. From these observations, it seems that we obtained In2S3 films only. Thin films optical absorption were determined from transmittance (T) and reflectance (R) measurements by using the following formula

• the film thickness with the number of ALD cycles for a ratio of 10% of In2O3 cycles is illustrated in Figure 4b. A linear growth is observed up to 1500 ALD cycles. GIXRD measurements revealed an amorphous structure in all the samples. Transmittance and reflectance measurements were carried out on the

• In2(S,O)3 samples. Figure 5 shows the transmittance of In2(S,O)3 films as a function of the percentage of In2O3 cycles. A shift of the onset absorption can be observed, which suggests an evolution in the properties of the films. The indirect optical transitions were identified for all samples from

Surface passivation and optical characterization of Al₂O₃/a-SiC_x stacks on c-Si substrates

• Gema López,
• Pablo R. Ortega,
• Cristóbal Voz,
• Isidro Martín,
• Mónica Colina,
• Anna B. Morales,
• Albert Orpella and
• Ramón Alcubilla

Beilstein J. Nanotechnol. 2013, 4, 726–731, doi:10.3762/bjnano.4.82

• integrating sphere in the wavelength range from 300 to 600 nm. The stack absorbance was calculated from the reflectance and transmittance measurements following Equation 1 and Equation 2, where A is the absorbance, T the transmittance and R the reflectance. The subscritps L and G correspond to the layer stack

• layers with different thicknesses and also of different Al2O3/a-SiCx stacks was calculated by evaluating reflectance and transmittance measurements. We found that the absorption loss in a-SiCx layers in the range of short wavelengths of is the reason for the superior overall optical performance of a

• ). The reflectance (diffuse and specular) and the transmittance were measured in the wavelength range from 300 to 1200 nm by using a UV–visible–NIR spectrometer (Shimadzu 3600) equipped with an ISR 3100 integrating sphere. Surface recombination velocity, Seff,max [cm/s]. (a) and (b) Seff,max for randomly

Evolution of microstructure and related optical properties of ZnO grown by atomic layer deposition

• Adib Abou Chaaya,
• Roman Viter,
• Mikhael Bechelany,
• Zanda Alute,
• Donats Erts,
• Anastasiya Zalesskaya,
• Kristaps Kovalevskis,
• Vincent Rouessac,
• Valentyn Smyntyna and
• Philippe Miele

Beilstein J. Nanotechnol. 2013, 4, 690–698, doi:10.3762/bjnano.4.78

• , 19, Raina Blvd., LV 1586, Riga, Latvia 10.3762/bjnano.4.78 Abstract A study of transmittance and photoluminescence spectra on the growth of oxygen-rich ultra-thin ZnO films prepared by atomic layer deposition is reported. The structural transition from an amorphous to a polycrystalline state is

• structure (narrowing of XRD peaks), a crystalline growth and an alleviation of lattice strain, and an enhancement of the surface roughness and the texture coefficient. Optical properties Transmittance spectra. Transmittance spectra of the samples are shown in Figure 3a. ZnO films with a thickness of less

• than 100nm are transparent in the 500–1100 nm range. Observed transmittance maxima and minima in the spectra of films with a thickness of more than 100 nm match the interference patterns. Since ZnO is an n-type semiconductor of direct optical transitions the optical density D is calculated as: where T

Micro- and nanoscale electrical characterization of large-area graphene transferred to functional substrates

• Gabriele Fisichella,
• Salvatore Di Franco,
• Patrick Fiorenza,
• Raffaella Lo Nigro,
• Fabrizio Roccaforte,
• Cristina Tudisco,
• Guido G. Condorelli,
• Nicolò Piluso,
• Noemi Spartà,
• Stella Lo Verso,
• Corrado Accardi,
• Cristina Tringali,
• Sebastiano Ravesi and
• Filippo Giannazzo

Beilstein J. Nanotechnol. 2013, 4, 234–242, doi:10.3762/bjnano.4.24

• value in graphene-coated PEN can also be partially ascribed to the presence of resist residues from the transfer process. The homogeneity of graphene membranes on the transparent PEN substrate can be characterized in a straightforward way by optical transmittance microscopy, since a contrast between

Photoresponse from single upright-standing ZnO nanorods explored by photoconductive AFM

• Igor Beinik,
• Markus Kratzer,
• Astrid Wachauer,
• Lin Wang,
• Yuri P. Piryatinski,
• Gerhard Brauer,
• Xin Yi Chen,
• Yuk Fan Hsu,
• Aleksandra B. Djurišić and
• Christian Teichert

Beilstein J. Nanotechnol. 2013, 4, 208–217, doi:10.3762/bjnano.4.21

• collimating lenses. A calibration curve, which accounts for both the transmittance of the optical system and the emission spectrum of the light source, was recorded and used for the correction of the photocurrent spectra. The illumination from the AFM feedback laser diode, which has a wavelength of ≈850 nm

Plasmonic oligomers in cylindrical vector light beams

• Mario Hentschel,
• Jens Dorfmüller,
• Harald Giessen,
• Sebastian Jäger,
• Andreas M. Kern,
• Kai Braun,
• Dai Zhang and
• Alfred J. Meixner

Beilstein J. Nanotechnol. 2013, 4, 57–65, doi:10.3762/bjnano.4.6

• they are perfectly matched to their high spatial symmetry. Extinction spectra of a gold monomer, a gold hexamer, and gold heptamers with different interparticle gap separations. The spectra are shifted upward for clarity. (left column) Experimental extinction spectra (1 − transmittance). (middle column

Influence of the diameter of single-walled carbon nanotube bundles on the optoelectronic performance of dry-deposited thin films

• Kimmo Mustonen,
• Toma Susi,
• Antti Kaskela,
• Patrik Laiho,
• Ying Tian,
• Albert G. Nasibulin and
• Esko I. Kauppinen

Beilstein J. Nanotechnol. 2012, 3, 692–702, doi:10.3762/bjnano.3.79

• : bundle diameter; sheet resistance; SWCNT; thin film; transmittance; Introduction Single-walled carbon nanotubes (SWCNT) offer great application potential in future electronics, such as micro-electromechanical devices [1], sensors [2][3], transparent electrodes [4][5][6], thin-film field-effect

• transmittance measured at the middle of the visible spectrum (λ = 550 nm, or 2.3 eV). The UV–vis–NIR absorption spectra and four-point sheet resistance values shown in Table 1 were used to calculate the corresponding K’s shown in Figure 6. The solid curves represent previously published data for SWCNTs

Low-temperature synthesis of carbon nanotubes on indium tin oxide electrodes for organic solar cells

• Andrea Capasso,
• Luigi Salamandra,
• Aldo Di Carlo,
• John M. Bell and
• Nunzio Motta

Beilstein J. Nanotechnol. 2012, 3, 524–532, doi:10.3762/bjnano.3.60

• ). The transmittance and the resistivity of each electrode were measured and are reported in Table 1. The density distribution of the tubes is found to scale considerably with the deposition temperature. On Sample A (550 °C), a dense and thick layer of MWCNTs covers the entire ITO area. Due to the CNT

• particles with a typical size of >2 µm. As a consequence, the film surface would segregate and change its chemical ratio. The film conductivity will in turn significantly decrease, as will the optical transmittance, on account of a stronger light absorption and scattering caused by those metallic

• microspheres. In contrast, at 525 °C (Sample B) and 500 °C (Sample C), the degradation is not as severe and the conductivity of the film is still acceptable (25–30 Ω/sq). In these two cases the nanotubes nucleate with a lower density, and the substrates show a transmittance at 515 nm of 45 and 75

Substrate-mediated effects in photothermal patterning of alkanethiol self-assembled monolayers with microfocused continuous-wave lasers

• Anja Schröter,
• Mark Kalus and
• Nils Hartmann

Beilstein J. Nanotechnol. 2012, 3, 65–74, doi:10.3762/bjnano.3.8

• transmittance T and reflectance R at a wavelength of 532 nm and normal incidence was determined. The respective data are summarized in Table 1. Taking into account the transmittance and reflectance data allows one to calculate the absorbance A and the effective absorption coefficient αAu of the films from [12

• distinct immersion times on a single sample (Figure 8). After etching, the samples were rinsed in deionized water and blown dry with argon. For the characterization of bare and HDT-coated substrates, UV–vis spectroscopy, laser reflectance and transmittance measurements, contact angle measurements and

• infrared reflection–absorption spectroscopy (IRRAS) were used. UV–vis spectra were measured with a Perkin Elmer UV–vis spectrometer (Lambda 950). Laser reflectance and transmittance measurements were carried out at λ = 532 nm by using the DPSS laser of the patterning setup and a power meter with a thermal

Plasmonic nanostructures fabricated using nanosphere-lithography, soft-lithography and plasma etching

• Manuel R. Gonçalves,
• Taron Makaryan,
• Fabian Enderle,
• Stefan Wiedemann,
• Alfred Plettl,
• Othmar Marti and
• Paul Ziemann

Beilstein J. Nanotechnol. 2011, 2, 448–458, doi:10.3762/bjnano.2.49

• evaporated on top of hemispherical structures of epoxy resin with different radii, and the reflectance and transmittance were measured for optical wavelengths. Experimental results show that the reflectivity of coated hemispheres is lower than that of coated polystyrene spheres of the same size, for certain

• wavelength bands. The spectral position of these bands correlates with the size of the hemispheres. In contrast, etched structures on quartz coated with gold films exhibit low reflectance and transmittance values for all wavelengths measured. Low transmittance and reflectance indicate high absorbance, which

• Figure 2, AFM images of coated beads and coated hemispheres are shown. For further details on the fabrication, see the Experimental section. Reflectance and transmittance measurements on coated spheres and hemispheres of the same size permit a comparison of the resonances and their spectral positions