Control of morphology and crystallinity of CNTs in flame synthesis with one-dimensional reaction zone

• Muhammad Hilmi Ibrahim,
• Norikhwan Hamzah,
• Mohd Zamri Mohd Yusop,
• Ni Luh Wulan Septiani and
• Mohd Fairus Mohd Yasin

Beilstein J. Nanotechnol. 2023, 14, 741–750, doi:10.3762/bjnano.14.61

• widely accepted vapor–liquid–solid mechanism, the growth of CNTs occurs in three steps, namely, melting of nickel particles, adsorption of carbon atoms onto the surface of the metallic nickel, and finally, diffusion and deposition of the precipitated carbon, which forms tubular materials by curling of

Formation of nanoflowers: Au and Ni silicide cores surrounded by SiO_x branches

• Feitao Li,
• Siyao Wan,
• Dong Wang and
• Peter Schaaf

Beilstein J. Nanotechnol. 2023, 14, 133–140, doi:10.3762/bjnano.14.14

• to the strong ability of Au to enhance SiO2 decomposition, and nanoflowers with less difference in their branches can be observed across the whole sample. Keywords: Au/Ni bilayers; dewetting; vapor–liquid–solid; SiO2 decomposition; SiOx nanowires; Introduction Substantial efforts have been devoted

• to developing different kinds of nanofabrication methods during the past decades. For example, silicon oxide (SiOx) nanostructures can be grown by the catalyzing effect of Au nanoparticles based on the vapor–liquid–solid (VLS) mechanism [1][2][3][4]. Au–SiOx nanoflowers consisting of Au nanoparticles

Chemical vapor deposition of germanium-rich CrGe_x nanowires

• Vladislav Dřínek,
• Stanislav Tiagulskyi,
• Roman Yatskiv,
• Jan Grym,
• Radek Fajgar,
• Věra Jandová,
• Martin Koštejn and
• Jaroslav Kupčík

Beilstein J. Nanotechnol. 2021, 12, 1365–1371, doi:10.3762/bjnano.12.100

• serve as initiation spots from which Ge NWs grow via a self-catalyzed mechanism. The Nanowires grow from the top as one can see a small nanodroplet on the top in Figure 3d. It means that growth follows a vapor–liquid–solid (VLS) mechanism [18], although the material of droplet and NW is the same. Bear

Imaging and milling resolution of light ion beams from helium ion microscopy and FIBs driven by liquid metal alloy ion sources

• Nico Klingner,
• Gregor Hlawacek,
• Paul Mazarov,
• Wolfgang Pilz,
• Fabian Meyer and
• Lothar Bischoff

Beilstein J. Nanotechnol. 2020, 11, 1742–1749, doi:10.3762/bjnano.11.156

• mass-separated FIBs from a Co36Nd64 LMAIS to implant Co into Si at elevated temperatures, leading to metallic CoSi2 nanostructures down to 20 nm [13]. Ge nanowires could be grown by molecular beam epitaxy, via a vapor–liquid–solid process, on a Si substrate after formation of a regular seed array using

Revealing the local crystallinity of single silicon core–shell nanowires using tip-enhanced Raman spectroscopy

• Marius van den Berg,
• Ardeshir Moeinian,
• Arne Kobald,
• Yu-Ting Chen,
• Anke Horneber,
• Steffen Strehle,
• Alfred J. Meixner and
• Dai Zhang

Beilstein J. Nanotechnol. 2020, 11, 1147–1156, doi:10.3762/bjnano.11.99

• -catalyzed vapor–liquid–solid growth and silicon overcoating by thermal chemical vapor deposition. Local changes in the fraction of crystallinity in these silicon nanowires are characterized at an optical resolution of about 300 nm. Furthermore, we are able to resolve the variations in the intensity ratios

• electronic functionality of such nanometer-scale building blocks. A rational and well-established synthesis strategy for the creation of complex silicon nanostructures is metal-catalyzed vapor–liquid–solid (VLS) nanowire growth [13]. VLS nanowire growth belongs to the gas-phase synthesis procedures, similar

Electrochemical nanostructuring of (111) oriented GaAs crystals: from porous structures to nanowires

• Elena I. Monaico,
• Eduard V. Monaico,
• Veaceslav V. Ursaki,
• Shashank Honnali,
• Vitalie Postolache,
• Karin Leistner,
• Kornelius Nielsch and
• Ion M. Tiginyanu

Beilstein J. Nanotechnol. 2020, 11, 966–975, doi:10.3762/bjnano.11.81

• a GaAsSb NW IR detector (1300 nm), although the responsivity of the GaAsSb NW detector is better [34]. A photodetector based on a single GaAs nanowire with a responsivity of 1.2 mA·W−1 has been recently reported on a nanowire prepared by chemical beam epitaxy (CBE) with a vapor–liquid–solid (VLS

Transition from freestanding SnO₂ nanowires to laterally aligned nanowires with a simulation-based experimental design

• Jasmin-Clara Bürger,
• Sebastian Gutsch and
• Margit Zacharias

Beilstein J. Nanotechnol. 2020, 11, 843–853, doi:10.3762/bjnano.11.69

• laterally aligned nanowires, indicating that the nanowire growth takes place in a transient period of the gas exchange. Keywords: finite element method simulation; laterally aligned nanowires; planar growth; tin oxide; vapor–liquid–solid nanowire growth; Introduction Since the first reports in 1964 by

• Wagner and Ellis about the possibility to use a vapor–liquid–solid (VLS) process to grow semiconductor nanowires (NWs), significant work has been published on the production of nanowires [1][2]. It was demonstrated that NWs of different materials can be grown on different substrates and can be

Gas sensing properties of individual SnO₂ nanowires and SnO₂ sol–gel nanocomposites

• Alexey V. Shaposhnik,
• Dmitry A. Shaposhnik,
• Sergey Yu. Turishchev,
• Olga A. Chuvenkova,
• Stanislav V. Ryabtsev,
• Alexey A. Vasiliev,
• Xavier Vilanova,
• Francisco Hernandez-Ramirez and
• Joan R. Morante

Beilstein J. Nanotechnol. 2019, 10, 1380–1390, doi:10.3762/bjnano.10.136

• characterization SnO2 nanowire synthesis The gas transport method based on the vapor–liquid–solid (VLS) mechanism was used for the synthesis of SnO2 nanowires. Argon saturated with water vapor served as the transport medium. Water was used as a mild oxidant of metallic tin in the following reaction: The formation

• of the coherence area, which is determined by the crystallinity of the structure. Nanowires formed by the vapor–liquid–solid mechanism have high and narrow peaks, confirming their monocrystalline structure. In contrast, the nanopowders exhibit low and wide peaks, demonstrating their disordered

Features and advantages of flexible silicon nanowires for SERS applications

• Hrvoje Gebavi,
• Vlatko Gašparić,
• Dubravko Risović,
• Nikola Baran,
• Paweł Henryk Albrycht and
• Mile Ivanda

Beilstein J. Nanotechnol. 2019, 10, 725–734, doi:10.3762/bjnano.10.72

• commercially available substrates and that our intention is not to rate or evaluate, but rather the presentation of the first results. Experimental Horizontal silicon nanowires were fabricated by vapor–liquid–solid (VLS) synthesis in a low-pressure chemical vapor deposition (LPCVD) reactor as described in [23

Sub-wavelength waveguide properties of 1D and surface-functionalized SnO₂ nanostructures of various morphologies

• Venkataramana Bonu,
• Binaya Kumar Sahu,
• Arindam Das,
• Sankarakumar Amirthapandian,
• Sandip Dhara and
• Harish C. Barshilia

Beilstein J. Nanotechnol. 2019, 10, 379–388, doi:10.3762/bjnano.10.37

• chemical vapor deposition (CVD) technique has been widely used for the controlled preparation of nanostructures [23]. Especially the vapor–solid (VS) process, without the involvement of catalysts, and the vapor–liquid–solid (VLS) process, with the assistance of catalysts, are utilized for the growth of

• . Experimental One-dimensional SnO2 NWs of different morphology were grown in a horizontal quartz tube furnace by using catalytic vapor–liquid–solid (VLS) and self-catalytic vapor–solid (VS) methods. In both the cases, the synthesized SnO2 QDs of diameter 2.4 nm were used as a precursor material. The synthesis

Oriented zinc oxide nanorods: A novel saturable absorber for lasers in the near-infrared

• Pavel Loiko,
• Tanujjal Bora,
• Josep Maria Serres,
• Haohai Yu,
• Magdalena Aguiló,
• Francesc Díaz,
• Uwe Griebner,
• Valentin Petrov,
• Xavier Mateos and
• Joydeep Dutta

Beilstein J. Nanotechnol. 2018, 9, 2730–2740, doi:10.3762/bjnano.9.255

• exciton binding energy (60 meV) [3], allowing for efficient excitonic photoluminescence at room temperature, and due to their good mechanical and thermal stability. Arrays of ZnO NRs can be grown on various substrates (e.g., Si, Al2O3, glass) either by gas phase processes (e.g., by vapor–liquid–solid

Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy

• Alexey D. Bolshakov,
• Alexey M. Mozharov,
• Georgiy A. Sapunov,
• Igor V. Shtrom,
• Nickolay V. Sibirev,
• Vladimir V. Fedorov,
• Evgeniy V. Ubyivovk,
• Maria Tchernycheva,
• George E. Cirlin and
• Ivan S. Mukhin

Beilstein J. Nanotechnol. 2018, 9, 146–154, doi:10.3762/bjnano.9.17

• absence of a doping flux [16]. Compared to other widely studied III–V NWs (e.g., Al(Ga, In)As), which can be synthesized by MBE on Si substrates via a vapor–liquid–solid (VLS) mechanism that uses catalyst droplets, GaN NWs grow according to the self-induced mechanism in the absence of catalyst [17][18

Combined scanning probe electronic and thermal characterization of an indium arsenide nanowire

• Tino Wagner,
• Fabian Menges,
• Heike Riel,
• Bernd Gotsmann and
• Andreas Stemmer

Beilstein J. Nanotechnol. 2018, 9, 129–136, doi:10.3762/bjnano.9.15

• -patterned wafer on which they where localized and contacted by e-beam lithography. The InAs NWs studied were grown in a metal-organic vapor deposition (MOCVD) system by vapor–liquid–solid (VLS) growth using a gold particle as catalyst and using trimethylindium (TMIn) and tert-butylarsine (TBA) as precursors

Substrate and Mg doping effects in GaAs nanowires

• Perumal Kannappan,
• Nabiha Ben Sedrine,
• Jennifer P. Teixeira,
• Maria R. Soares,
• Bruno P. Falcão,
• Maria R. Correia,
• Nestor Cifuentes,
• Emilson R. Viana,
• Marcus V. B. Moreira,
• Geraldo M. Ribeiro,
• Alfredo G. de Oliveira,
• Juan C. González and
• Joaquim P. Leitão

Beilstein J. Nanotechnol. 2017, 8, 2126–2138, doi:10.3762/bjnano.8.212

• channels as well as the role of defects on the optical properties are discussed. Experimental Mg-doped GaAs nanowires were grown on GaAs(111)B (sample A) and Si(111) (sample B) substrates by MBE in a Riber 2300 MBE reactor [14]. The nanowire growth was promoted through the Au-assisted vapor–liquid–solid

Collembola cuticles and the three-phase line tension

• Håkon Gundersen,
• Hans Petter Leinaas and
• Christian Thaulow

Beilstein J. Nanotechnol. 2017, 8, 1714–1722, doi:10.3762/bjnano.8.172

• vapor–liquid–solid systems, but exceeds the values predicted by theoretical studies [17][18]. The Collembola Cryptopygus clavatus changes between superhydrophic water repellance with plastron formation upon submersion under winter conditions and active grazing underwater with no visible plastron under

Investigation of growth dynamics of carbon nanotubes

• Marianna V. Kharlamova

Beilstein J. Nanotechnol. 2017, 8, 826–856, doi:10.3762/bjnano.8.85

• status of the research on the investigation of growth dynamics of carbon nanotubes. In the first part of the review, the peculiarities of the growth mechanism of carbon nanotubes are discussed. The well-accepted growth models of nanotubes are highlighted. Among them are the vapor–liquid–solid and vapor

• described in detail in [18]. Growth mechanism of carbon nanotubes Although the synthesis of nanotubes with controlled properties can be performed in the CVD process, the growth mechanism of nanotubes is not completely understood and is still debated. Nanotube growth in the CVD process Vapor-liquid-solid and

• vapor-solid-solid growth models. In the 1970s, Baker with co-authors suggested in [19][20][21] that the growth of carbon filaments occurred by the vapor–liquid–solid (VLS) model, which was previously developed by Wagner and Ellis to explain the growth of silicon whiskers [22]. In the growth process of

Self-assembly of silicon nanowires studied by advanced transmission electron microscopy

• Marta Agati,
• Guillaume Amiard,
• Vincent Le Borgne,
• Paola Castrucci,
• Richard Dolbec,
• Maurizio De Crescenzi,
• My Alì El Khakani and
• Simona Boninelli

Beilstein J. Nanotechnol. 2017, 8, 440–445, doi:10.3762/bjnano.8.47

• possess a nanoparticle at their tip. STEM energy dispersive X-ray (EDX) spectroscopy combined with electron tomography performed on these nanostructures revealed that they contain iron, clearly demonstrating that the short ICP-synthesized SiNWs grew via an iron-catalyzed vapor–liquid–solid (VLS) mechanism

• approaches used for the production of thin SiNWs. Keywords: silicon nanowires; transmission electron microscopy; vapor–liquid–solid growth; Introduction As the scaling down of the feature size of devices proceeds [1], new synthesis routes are being explored to produce materials with ultra-low

• –liquid–solid (VLS) mechanism is the driving process for the growth of these SiNWs and could open the route for the production of SiNWs via the ICP technique. Results and Discussion Preliminary examinations of the ICP sample were performed by means of scanning electron microscopy (SEM). In the typical SEM

Synthesis of boron nitride nanotubes and their applications

• Saban Kalay,
• Zehra Yilmaz,
• Ozlem Sen,
• Melis Emanet,
• Emine Kazanc and
• Mustafa Çulha

Beilstein J. Nanotechnol. 2015, 6, 84–102, doi:10.3762/bjnano.6.9

• mechanism is called vapor–liquid–solid (VLS). The high yield of BNNTs was observed as a white powder in the inner wall of the aluminum boat and on the substrate. Note that for the BOCVD mechanism to occur, variation in the types of catalysts, boron compounds and nitrogen-containing gases should be used. The

Bright photoluminescence from ordered arrays of SiGe nanowires grown on Si(111)

• D. J. Lockwood,
• N. L. Rowell,
• A. Benkouider,
• A. Ronda,
• L. Favre and
• I. Berbezier

Beilstein J. Nanotechnol. 2014, 5, 2498–2504, doi:10.3762/bjnano.5.259

• reported including vapor–liquid–solid [14][15][16][17], solid–liquid–solid [18][19], vapor–solid–solid [20][21][22], oxide-assisted [23], and others [24][25][26][27]. Many of these growth methods have lead to NWs possessing non-uniform diameters and lengths and that are haphazardly oriented and randomly

Mechanical properties of sol–gel derived SiO₂ nanotubes

• Boris Polyakov,
• Mikk Antsov,
• Sergei Vlassov,
• Leonid M Dorogin,
• Mikk Vahtrus,
• Roberts Zabels,
• Sven Lange and
• Rünno Lõhmus

Beilstein J. Nanotechnol. 2014, 5, 1808–1814, doi:10.3762/bjnano.5.191

• prepared by sol–gel synthesis. Dikin et al. and Ni et al. studied SiO2 nanowires (NWs) grown at high temperature with the vapor–liquid–solid method, by using resonance and the three-point bending methods, respectively [13][14]. Houmadi et al. investigated the mechanical properties of SiO2 nanotubes (NTs

Review of nanostructured devices for thermoelectric applications

• Giovanni Pennelli

Beilstein J. Nanotechnol. 2014, 5, 1268–1284, doi:10.3762/bjnano.5.141

• approaches are based on the crystalline growth of nanowires by means of chemical vapour deposition (CVD) techniques. The most common CVD technique for the fabrication of silicon nanowires is the vapor–liquid–solid (VLS) growth [74][75], developed in particular by the group of Lieber at Harvard [76][77][78

Preparation of electrochemically active silicon nanotubes in highly ordered arrays

• Tobias Grünzel,
• Young Joo Lee,
• Karsten Kuepper and
• Julien Bachmann

Beilstein J. Nanotechnol. 2013, 4, 655–664, doi:10.3762/bjnano.4.73

• transport of Li+ ions inside the solid remains ‘horizontal’, so that the lateral characteristic length of the porous structure should be small. Indeed, a proof of principle has been provided based on nanowires and nanotubes obtained either by vapor-liquid solid methods or from bulk silicon [6][7][8], and

Synthesis and electrical characterization of intrinsic and in situ doped Si nanowires using a novel precursor

• Wolfgang Molnar,
• Alois Lugstein,
• Tomasz Wojcik,
• Peter Pongratz,
• Norbert Auner,
• Christian Bauch and
• Emmerich Bertagnolli

Beilstein J. Nanotechnol. 2012, 3, 564–569, doi:10.3762/bjnano.3.65

• (NW) by the well-established vapor–liquid–solid (VLS) mechanism. By adding doping agents, specifically BBr3 and PCl3, we achieved highly p- and n-type doped Si-NWs by means of atmospheric-pressure chemical vapor deposition (APCVD). These as grown NWs were investigated by means of scanning electron

• nanowires; vapor–liquid–solid mechanism; Introduction As potential building blocks for nanoelectronics [1][2], bio-chemical sensors [3][4], light-emitting devices with extremely low power consumption, and solar cells [5], nanotubes [6] and NWs [7] have drawn a lot of interest during the last two decades

Directed deposition of silicon nanowires using neopentasilane as precursor and gold as catalyst

• Britta Kämpken,
• Verena Wulf,
• Norbert Auner,
• Marcel Winhold,
• Michael Huth,
• Daniel Rhinow and
• Andreas Terfort

Beilstein J. Nanotechnol. 2012, 3, 535–545, doi:10.3762/bjnano.3.62

• deposited as a thin film and thermally annealed, but can also be patterned by using UV irradiation, providing access to laterally structured layers of silicon nanowires. Keywords: chemical vapor deposition; gold; nanoparticle; patterning; radiation-induced nanostructures; vapor-liquid-solid mechanism

• nanosized wires (NW) of silicon including thermal evaporation [9], molecular beam epitaxy [10], laser ablation [11], chemical vapor deposition (CVD) [12] and CVD in combination with the vapor–liquid–solid (VLS) method [13]. In the VLS mechanism, small solid metal particles catalyze the decomposition of the

Radiation-induced nanostructures: Formation processes and applications

• Michael Huth

Beilstein J. Nanotechnol. 2012, 3, 533–534, doi:10.3762/bjnano.3.61

• –liquid–solid approach and the preparation of monolayers of metal–organic frameworks attached to the functional groups of a self-assembled monolayer (see, e.g., [1][2][3][4]). Not as wide-spread, but rapidly developing, is the technique of focused electron beam induced deposition (FEBID) [5]. In this

• , or in the form of focused electron beams following a maskless approach for pattern definition in a radiation-sensitive resist, also commonly known as electron beam lithography. Examples of this are found in this Thematic Series covering the topics of selected-area silicon nanowire growth by the vapor