The integration of graphene into microelectronic devices

• Guenther Ruhl,
• Sebastian Wittmann,
• Matthias Koenig and
• Daniel Neumaier

Beilstein J. Nanotechnol. 2017, 8, 1056–1064, doi:10.3762/bjnano.8.107

• methods are using a catalytic metal layer, one approach is the in situ removal of the metal layer between graphene and dielectric substrate by wet etching. In order to attach the graphene film to the substrate an additional adhesion mechanism has to be involved. One approach is the use of capillary forces

Silicon microgrooves for contact guidance of human aortic endothelial cells

• Sara Fernández-Castillejo,
• Pilar Formentín,
• Úrsula Catalán,
• Josep Pallarès,
• Lluís F. Marsal and
• Rosa Solà

Beilstein J. Nanotechnol. 2017, 8, 675–681, doi:10.3762/bjnano.8.72

• silicon substrates To study the cellular response on surfaces with different geometry, different grooved substrates were produced in silicon wafers using standard photolithography and wet etching techniques [35][36]. The etching time in tetramethylammonium hydroxide (TMAH) was varied in order to generate

Precise in situ etch depth control of multilayered III−V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment

• Ann-Kathrin Kleinschmidt,
• Lars Barzen,
• Johannes Strassner,
• Christoph Doering,
• Henning Fouckhardt,
• Wolfgang Bock,
• Michael Wahl and
• Michael Kopnarski

Beilstein J. Nanotechnol. 2016, 7, 1783–1793, doi:10.3762/bjnano.7.171

• -etching is an essential step of many lithographic processes, e.g., in semiconductor device fabrication, and offers several advantages over wet-etching as for instance the opportunity to achieve anisotropic etching and vertical etch flanks [10][11]. As the requirements for accuracy in microfabrication

Effect of tetramethylammonium hydroxide/isopropyl alcohol wet etching on geometry and surface roughness of silicon nanowires fabricated by AFM lithography

• Siti Noorhaniah Yusoh and
• Khatijah Aisha Yaacob

Beilstein J. Nanotechnol. 2016, 7, 1461–1470, doi:10.3762/bjnano.7.138

• Siti Noorhaniah Yusoh Khatijah Aisha Yaacob School of Materials and Mineral Resources Engineering, Engineering Campus University Sains Malaysia, Seri Ampangan, 14300 Nibong Tebal, Penang, Malaysia 10.3762/bjnano.7.138 Abstract The optimization of etchant parameters in wet etching plays an

• important role in the fabrication of semiconductor devices. Wet etching of tetramethylammonium hydroxide (TMAH)/isopropyl alcohol (IPA) on silicon nanowires fabricated by AFM lithography is studied herein. TMAH (25 wt %) with different IPA concentrations (0, 10, 20, and 30 vol %) and etching time durations

• width of the silicon nanowires with a smooth surface. It was also observed that the use of a longer etching time causes more unmasked silicon layers to be removed. Importantly, throughout this study, wet etching with optimized parameters can be applied in the design of the devices with excellent

Large-scale fabrication of achiral plasmonic metamaterials with giant chiroptical response

• Morten Slyngborg,
• Yao-Chung Tsao and
• Peter Fojan

Beilstein J. Nanotechnol. 2016, 7, 914–925, doi:10.3762/bjnano.7.83

• to fabricate functionalized surfaces applicable for sensors with increased sensitivity or arrays hereof in a cheap and scaleable way. Experimental Fabrication of extrinsic chiral metamaterials The original molds were prepared by anodic aluminum oxidation using a custom-built anodization and wet

• -etching system. Al foils (99.98%, Advent Research Materials Ltd. AL103310) were used as substrates after cleaning in an ultrasonic bath with a sequence of acetone, deionized water and methanol for 1 min each. In total three types of molds were prepared with different interpore distances: 300, 430 and 600

Electrochemical coating of dental implants with anodic porous titania for enhanced osteointegration

• Amirreza Shayganpour,
• Alberto Rebaudi,
• Pierpaolo Cortella,
• Alberto Diaspro and
• Marco Salerno

Beilstein J. Nanotechnol. 2015, 6, 2183–2192, doi:10.3762/bjnano.6.224

• [1]. The successful patterning of Ti by means of oxide nanopores, as shown in Figure 3a on machined implants, can be of greater importance when demonstrated on implants patterned on the microscale by the different and most common methods of either sandblasting and/or acid etching (simple wet etching

• out in combination with the standard microscale patterning processes of sandblasting and wet etching. According to both SEM morphology and EDS composition, no significant difference was observed on average after inspection of several different locations on different implants (N ≥ 6), and between

• from the anodization did not alter the underlying surface profile on the microscale. Therefore, when not sufficient to provide osteointegration by itself, anodization can be an additive treatment in addition to microscale sandblasting or wet etching. By anodizing in phosphoric acid, a remarkable doping

A scanning probe microscope for magnetoresistive cantilevers utilizing a nested scanner design for large-area scans

• Tobias Meier,
• Alexander Förste,
• Ali Tavassolizadeh,
• Karsten Rott,
• Dirk Meyners,
• Roland Gröger,
• Günter Reiss,
• Eckhard Quandt,
• Thomas Schimmel and
• Hendrik Hölscher

Beilstein J. Nanotechnol. 2015, 6, 451–461, doi:10.3762/bjnano.6.46

• prepared by a sequence of MEMS techniques including photolithography, reactive ion etching (RIE), ion beam etching (IBE) and wet etching. The cantilevers used in this study were 300 to 350 μm long and 40 μm wide. To ease the fabrication process thicknesses ranging from 10 μm to 20 μm were chosen. The

Organic and inorganic–organic thin film structures by molecular layer deposition: A review

• Pia Sundberg and
• Maarit Karppinen

Beilstein J. Nanotechnol. 2014, 5, 1104–1136, doi:10.3762/bjnano.5.123

• films include optoelectronic devices, sensors, flexible electronics, solar cell applications, and protective coatings, to name only a few. It is also straightforward to make porous structures from the ALD/MLD grown hybrids by removing the organic part by simple annealing or wet-etching procedures [15

• . Wet-etching testing revealed that when treated with toluene, acetone, methanol, 1 M acetic acid, or water, no significant change in film thickness was observed [14]. However, as the ODA-pulse length of 3 s was not enough for the fully-saturated growth, in a later study TiCl4+ODA films with longer ODA

A look underneath the SiO₂/4H-SiC interface after N₂O thermal treatments

• Patrick Fiorenza,
• Filippo Giannazzo,
• Lukas K. Swanson,
• Alessia Frazzetto,
• Simona Lorenti,
• Mario S. Alessandrino and
• Fabrizio Roccaforte

Beilstein J. Nanotechnol. 2013, 4, 249–254, doi:10.3762/bjnano.4.26

• by 40 µm of protected substrate onto a thick SiO2 hard mask. After removing the hard mask, SSRM was performed on bare 4H-SiC exposed to cleaning, wet-etching in diluted HF, and standard rinsing. Schematic description of the POA treatment. (a) A SiO2 hard mask is used to protect selectively the 4H-SiC

Functionalization of vertically aligned carbon nanotubes

• Eloise Van Hooijdonk,
• Carla Bittencourt,
• Rony Snyders and
• Jean-François Colomer

Beilstein J. Nanotechnol. 2013, 4, 129–152, doi:10.3762/bjnano.4.14

• nanotube patterns [67]. Photolithography followed by dry and/or wet etching can be used to pattern silicon oxide in different shapes and thickness allowing the design of a wide range of organized nanotube structures. An example is the beautiful patterns of multiply oriented, organized, flower-like

Pinch-off mechanism in double-lateral-gate junctionless transistors fabricated by scanning probe microscope based lithography

• Farhad Larki,
• Arash Dehzangi,
• Alam Abedini,
• Ahmad Makarimi Abdullah,
• Elias Saion,
• Sabar D. Hutagalung,
• Mohd N. Hamidon and
• Jumiah Hassan

Beilstein J. Nanotechnol. 2012, 3, 817–823, doi:10.3762/bjnano.3.91

• resistivity of 13.5–22.5 Ω cm [16], by using scanning probe microscope (SPM) (SPI3800N/4000). The buried oxide layer in the SOI wafer was used as an insulator between the device and the handle silicon wafer, and also as the etch-stop in the wet-etching process. All predesigned oxide masks were fabricated in

Fabrication of multi-parametric platforms based on nanocone arrays for determination of cellular response

• Lindarti Purwaningsih,
• Tobias Schoen,
• Tobias Wolfram,
• Claudia Pacholski and
• Joachim P. Spatz

Beilstein J. Nanotechnol. 2011, 2, 545–551, doi:10.3762/bjnano.2.58

• photolithography, wet etching, or reactive ion etching, as well as simple chemical approaches, have been employed for the fabrication of nanostructured materials neglecting the complexity of the biological aspects. After tremendous work on cellular response to surface features in the micrometer range, such as

Plasmonic nanostructures fabricated using nanosphere-lithography, soft-lithography and plasma etching

• Manuel R. Gonçalves,
• Taron Makaryan,
• Fabian Enderle,
• Stefan Wiedemann,
• Alfred Plettl,
• Othmar Marti and
• Paul Ziemann

Beilstein J. Nanotechnol. 2011, 2, 448–458, doi:10.3762/bjnano.2.49

• without this Ar+ cleaning step, the amount of random pillars and roughness is strongly reduced. Subsequently, the RIE the Cr masks were removed by wet etching. The surface of etched quartz is hydrophilic. This is not a limitation for the metal coating but does, however, impede the detachment of the