Functional nanostructures for electronics, spintronics and sensors
In the last decade, the very rapid development in a subfield of solid state physics and engineering – superconducting spintronics based on functional nanostructures comprised of alternating layers ferromagnetic and superconducting materials – has been observed. Due to the proximity effect of superconductor/ferromagnetic (S/F) layers and Andreev reflection of Cooper pairs at the S/F interface, a number of new phenomena were first theoretically predicted then experimentally detected, including: a non-uniform superconducting Fulde–Ferrell–Larkin–Ovchinnikov state (FFLO state), S/F π-junctions, oscillations of critical temperature and critical current of S/F hybrids on the thickness of the F layer, multiperiodic re-entrant superconductivity, triplet pairing and triplet spin-valve effect – just to name some of the new phenomena that have been detected in layered S/F hybrid nanostructures. Moreover, the detected effects are very promising for technical applications directed towards enhancing the storage capacity of computer hard drives and the potential use as quantum computer building blocks.
The main goal of this thematic issue is to highlight this new area of research – superconductor/ferromagnetic hybrid nanostructures and their applications for quantum electronics and spintronics. In addition some other interesting functional nanostructures, such as sensors and single-atom transistors, are presented to highlight the fascinating world of nanoelectronics.
- Full Research Paper
- Published 23 Jan 2020
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Figure 1: Schematic representation of the SFIFS hybrid structure (here S is a superconductor, F is a ferromag...
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Figure 2: DOS Nf(E) on the free boundary of the F layer in the FS bilayer obtained numerically for two cases:...
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Figure 3: DOS Nf(E) on the free boundary of the F layer in the FS bilayer obtained numerically in the absence...
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Figure 4: Spin-resolved DOS Nf↑(↓) on the free boundary of the F layer in the FS bilayer obtained numerically...
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Figure 5: Current–voltage characteristics of the symmetric (df1 = df2 = df) SFIFS junction in the absence of ...
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Figure 6: Current–voltage characteristics of a symmetric SFIFS junction for different values of the subgap ex...
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Figure 7: (a) CVC taken from Figure 6b, red dashed line, and visual explanation of the characteristic behavior of the ...
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Figure 8: Current–voltage characteristics of a symmetric SFIFS junction in the absence of magnetic scattering...
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Figure 9: Current–voltage characteristics of an asymmetric (df1 ≠ df2) SFIFS junction for different values of...
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Figure 10: Current–voltage characteristics of a SFIFS junction in the presence of magnetic scattering (αm = 0....
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- Full Research Paper
- Published 15 May 2020
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Figure 1: LEED patterns of (a) pristine MgO annealed at 800 °C, (b) the VN film, (c) the VN/Pd0.92Fe0.08 and ...
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Figure 2: XRD patterns of pristine MgO substrate, VN, Pd0.96Fe0.04 (prepared in a separate deposition experim...
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Figure 3: In situ XPS spectra of (a) Fe and (b) Pd of the VN/Pd0.92Fe0.08 sample, and of (c) V and (d) N of t...
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Figure 4: Saturation magnetization Ms(T) as a function of the temperature of the Pd0.96Fe0.04/VN (green symbo...
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Figure 5: Temperature dependence of the electrical resistance of the VN film and the Pd0.96Fe0.04/VN and VN/Pd...
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- Full Research Paper
- Published 02 Jun 2020
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Figure 1: Sketch of a SN-S-SN Josephson junction based on a SN strip of variable thickness.
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Figure 2: Dependence of the superconducting current Is flowing along the SN bilayer on q for different dS. Th...
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Figure 3: (a) Current–phase relation of a SN-S-SN Josephson junction at different dS. The current is normaliz...
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Figure 4: Variation of current–phase relation of SN-S-SN junction as a function of: (a) the temperature; (b) ...
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- Full Research Paper
- Published 12 Jun 2020
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Figure 1: a) SEM images of ZnMgO films deposited on p-Si substrates by spin coating (left column) and aerosol...
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Figure 2: a) SEM image of a ZnMgO film prepared by aerosol spray pyrolysis. b) SEM image of a ZnMgO film prep...
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Figure 3: Elemental composition of a ZnO (a) and a Zn0.6Mg0.4O (b) film determined by EDAX analysis.
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Figure 4: PL spectra of Zn1−xMgxO films deposited by spin coating with x values of 0.00 (1); 0.05 (2); 0.15 (...
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Figure 5: PL spectra of Zn1−xMgxO films deposited by spin coating with x values of 0.00 (1); 0.10 (2); and 0....
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Figure 6: a) XRD pattern of a Zn0.8Mg0.2O film deposited by spin coating on a Si substrate and annealed at 50...
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Figure 7: A model for the band tails distribution at 20 K in Zn1−xMgxO films with the x value composition of ...
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Figure 8: PL spectra of Zn0.85Mg0.15O films by spin coating (curve 1) and aerosol spray pyrolysis (curve 2) m...
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Figure 9: Current–voltage characteristics in dark and under UV illumination for a p-Si/n-Zn0.9Mg0.1O heterost...
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Figure 10: Current–voltage characteristics in dark and under UV illumination for a p-Si/n-Zn0.6Mg0.4O heterost...
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- Full Research Paper
- Published 23 Jun 2020
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Figure 1: Experimentally measured histogram P(ISW) of switching the Josephson junction to the resistive state...
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Figure 2: Temperature dependence of the mean switching current (left axis, red dots) and its standard deviati...
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Figure 3: Experimental lifetime as function of the bias current for different sample temperatures (symbols) a...
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Figure 4: Detection probability of 9 GHz 50 ms pulses of different power (signal attenuation) for different v...
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Electrochemical nanostructuring of (111) oriented GaAs crystals: from porous structures to nanowires
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- Published 29 Jun 2020
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Figure 1: SEM images in cross section of porous GaAs layers for three different conditions of anodization in ...
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Figure 2: (A–C) SEM images in cross section at higher magnification of the porous layers obtained by anodizat...
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Figure 3: (A) SEM images of the formation of interrupted GaAs nanowires on the (111)B surface anodized in NaC...
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Figure 4: (A) SEM image in cross section of a GaAs(111)B sample anodized at 3 V for 20 min in 1 M HNO3. (B, C...
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Figure 5: PL spectra of bulk (curve 1) and anodized (curve 2) GaAs samples measured at a temperature of 10 K.
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Figure 6: XRD pattern of the anodized GaAs(111)B sample.
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Figure 7: (A) Optical microscopy image of the opened regions in the photoresist on the glass substrate for de...
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Figure 8: Current–voltage characteristics measured in dark (curve 1) and under IR illumination with power den...
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- Full Research Paper
- Published 10 Jul 2020
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Figure 1: SEM of Te films grown: a) on Pyrex glass at a rate of 10 nm/s and b) on nanostructured Al2O3 substr...
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Figure 2: XRD diffraction patterns of Te films grown on Pyrex glass (A) or nanostructured Al2O3 (B) substrate...
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Figure 3: Normalized dynamic response of a microcrystalline (red), nanocrystalline (blue) and amorphous (blac...
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Figure 4: Transient characteristics of gas-induced current in nanocrystalline Te films, at different temperat...
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Figure 5: Transient characteristics of gas-induced current in amorphous nanostructured Te films (blue curve) ...
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Figure 6: Comparison of the gas-sensing properties of nanocrystalline and amorphous nanostructured Te-based f...
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- Full Research Paper
- Published 16 Jul 2020
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Figure 1: (A) Positions of the Sb and Se atoms in the Sb2Se3 crystals. (B) The Sb2Se3 crystalline XRD pattern....
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Figure 2: The absorption spectra of the Sb2Se3 crystals, with thickness d = 113 µm, measured at different tem...
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Figure 3: (A) The spectra showing the edge absorption (α) and photoconductivity (JPh) for the Sb2Se3 crystals...
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Figure 4: The photoconductivity spectra registered when 2 V is applied to the In–Sb2Se3 contacts (Figure 3A, insert) u...
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Figure 5: (A) The reflection spectra of the Sb2Se3 crystal measured at room temperature for both E||c and E⟂c...
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Figure 6: The experimentally measured (exp.) and calculated (calc.) profiles of the reflection spectra for th...
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Figure 7: (A) The energy band structure of the Sb2Sе3 crystals. Insert illustrates the Brillouin zone. (B) Tr...
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Figure 8: The reflection spectra of the Sb2Se3 crystals measured at room temperature under Е||с and Е⟂с polar...
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- Full Research Paper
- Published 18 Aug 2020
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Figure 1: Fabricated piezoresistive sensor and experimental platform for Cd(II) detection.
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Figure 2: Process flow of biosensor for selective detection of Cd(II) ions.
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Figure 3: Non-stress calibrated values for used piezoresistive die.
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Figure 4: The change in piezoresistance of the unblocked cantilevers with respect to the cantilever blocked w...
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Figure 5: The average change in piezoresistance of microcantilevers: a) Au-Cys-DL-GC(3), b) Au-Cys-DL-GC(4), ...
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Figure 6: FTIR absorbance spectra of a Cd(II)/DL-GC/Cys/Au/Ti coating.
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Figure 7: EDX measurement of a SAM of cysteamine (Cys)-cross-linked ᴅʟ-glyceraldehyde (Cys-DL-GC). (a) Scan a...
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Figure 8: EDX measurement of a SAM of cysteamine (Cys)-cross-linked ᴅʟ-glyceraldehyde (Cys-DL-GC) after expos...
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- Full Research Paper
- Published 21 Aug 2020
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Figure 1: (a) Sketch of the experiment for structure and reflectometric measurements and (b) setup for the tr...
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Figure 2: RHEED patterns of (a) the Al2O3(
![[Graphic 13]](/bjnano/content/inline/2190-4286-11-109-i17.svg?max-width=637&scale=1.18182)
) substrate, (b) the Pt cap layer, and the Nb buffer layer grown at...
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Figure 3: X-ray diffraction patterns of (a) sample s3 and (b) sample s6. Dashed tilted lines show the directi...
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Figure 4: SQUID data of the s3 sample. (a) Hysteresis loop measured at T = 300 K (red) and T = 13 K (black). ...
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Figure 5: (a) Experimental (dots) and model (lines) reflectivity curves measured on sample s3 at T = 13 K and ...
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Figure 6: (a)
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(T) for the samples s4 (black) and s3 (red) in the vicinity of the superconducting transition m...
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- Full Research Paper
- Published 02 Sep 2020
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Figure 1: Schematic of the 0–120 kHz cryogenic LNA based on paired SSM2210 transistors. The important compone...
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Figure 2: The gain of the cryogenic differential BJT amplifier depending on the frequency at 77 and 300 K.
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Figure 3: The voltage noise spectral density of the cryogenic differential BJT amplifier as a fucntion of the...
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Figure 4: The gain of the cryogenic differential two-stage BJT amplifier as a function of the frequency at th...
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Figure 5: The voltage noise spectral density of the cryogenic differential parallel BJT amplifier as a functi...
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- Full Research Paper
- Published 07 Sep 2020
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Figure 1: (a) Sketch of the investigated multilayer Co(1.5 nm)/Nb(6 nm)/Co(2.5 nm)/Nb(6 nm) structure. (b) Th...
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Figure 2: (a) Pair amplitude, Δ, in a S(F1sF2s)x3F1 structure in different superconducting layers as a functi...
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Figure 3: (a) Pair amplitude, Δ, in a S(F1sF2s)x3F1 structure in different superconducting layers as a functi...
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Figure 4: A micrograph (a) and a principal scheme (b) of the structure used for the critical temperature meas...
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Figure 5: Resistance as a function of the temperature (a) without an initial magnetization of the sample, at ...
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Figure 6: (a) The output current, iout, of the inductive synapse versus the geometric inductance, lp, and the...
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- Full Research Paper
- Published 30 Sep 2020
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Figure 1: Schematic of the 6–12 GHz cryogenic LNA. The important component values are: C1 = 0.6 pF, C2 = 0.3 ...
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Figure 2: Realization of the cryogenic LNA.
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Figure 3: Noise and gain measurement setup. (a) Calibration lines (left-hand side sketch) and gain measuremen...
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Figure 4: Gain and noise temperature of the cryogenic LNA at the experimental temperature of 3.8 K.
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Figure 5: The X-mon qubit measurement setup. The implemented amplifier is marked as cLNA and the room-tempera...
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Figure 6: The qubit “sweet spot”. The transmission (color intensity graph with the blue color corresponding t...
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Figure 7: The qubit spectroscopy. The transmission dependence of the probing signal (color intensity graph) o...
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- Full Research Paper
- Published 28 Oct 2020
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Figure 1: (a) Spectrum of the electron–phonon interaction in indium obtained using Yanson point contacts. V2 ...
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Figure 2: Temporal dependence of the absolute values of the correlation coefficient |r|. Here, r describes th...
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Figure 3: Dependence of the analytical concentration of serotonin Cser on the average response voltage
![[Graphic 4]](/bjnano/content/inline/2190-4286-11-146-i8.svg?max-width=637&scale=1.18182)
in th...
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Figure 4: Dependence of the analytical concentration of cortisol Ccor on the average response voltage
![[Graphic 7]](/bjnano/content/inline/2190-4286-11-146-i11.svg?max-width=637&scale=1.18182)
in the...
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- Full Research Paper
- Published 20 Nov 2020
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Figure 1: Transmission spectra T = f(λ) of separate amorphous thin films and multilayer HS (1: Ge0.30As0.04S0...
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Figure 2: Absorption spectra α = f(hν) of separate amorphous thin films and multilayer HS (1: Ge0.30As0.04S0....
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Figure 3: Current–voltage characteristics of the amorphous thin-film HS with a positive voltage applied to th...
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Figure 4: Current–voltage characteristics of the amorphous thin-film HS with a negative voltage applied to th...
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Figure 5: Photocurrent spectra of separate amorphous thin films and the multilayer HS with a positive voltage...
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Figure 6: Photocurrent spectra of separate amorphous thin films and the HS with a negative voltage applied to...
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Figure 7: Normalized photocurrent spectra of the multilayer HS with different positive values of the voltage ...
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Figure 8: Normalized photocurrent spectra of the multilayer HS with different negative values of the voltage ...
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Figure 9: Peak position in the spectral distribution of the photocurrent for the different thin-film structur...
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Figure 10: Peak position in the spectral distribution of the photocurrent of amorphous thin-film HS as a funct...
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Figure 11: The magnifying power K of the different thin-film structures at positive (1) and at negative (2) po...
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Figure 12: The magnifying power K of the amorphous thin-film HS as a function of the applied voltage with posi...
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- Full Research Paper
- Published 24 Nov 2020
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Figure 1: Transmission electron microscopy (TEM) image of a layered nanostructure consisting of Nb, CuNi, CoOx...
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Figure 2: High-resolution transmission electron microscopy (HR-TEM) image of a layered Co, CoOx and CuNi nano...
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Figure 3: Sketch of a Nb/Co spin-valve nanosystem. The numbers next to the elements in the layers represent t...
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Figure 4: Scheme of the multilayer nanosystem formation modeling processes. The nanosystem contains a materia...
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Figure 5: Multilayer nanosystem of niobium and cobalt. The contact points of the nanofilms are indicated by (...
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Figure 6: Change in coordination (CN) number along the z-axis (shown in Figure 5) in Nb and Co layers of the nanostru...
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Figure 7: Spatial distribution of the coordination number in the formed multilayer Nb–Co (a) system and in it...
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Figure 8: The area of deposition flow (a) and the size of the simulation area (b). The deposition flow area i...
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Figure 9: Relative layer-by-layer composition of the Nb–Co nanosystem when the deposition flux is reduced by ...
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Figure 10: The relative layered composition of the Nb–Co nanosystem for different deposition rates. The parame...
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Figure 11: The percentage composition of the Nb–Co multilayer nanosystem formed at a substrate temperature of ...
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