Functional nanostructures for electronics, spintronics and sensors

  1. editorImage
  1. Editor: Prof. Anatolie S. Sidorenko
    Academy of Sciences of the Republic of Moldova

In the last decade, the very rapid development in a subfield of solid state physics and engineering – superconducting spintronics based on functional nanostructures comprised of alternating layers ferromagnetic and superconducting materials – has been observed. Due to the proximity effect of superconductor/ferromagnetic (S/F) layers and Andreev reflection of Cooper pairs at the S/F interface, a number of new phenomena were first theoretically predicted then experimentally detected, including: a non-uniform superconducting Fulde–Ferrell–Larkin–Ovchinnikov state (FFLO state), S/F π-junctions, oscillations of critical temperature and critical current of S/F hybrids on the thickness of the F layer, multiperiodic re-entrant superconductivity, triplet pairing and triplet spin-valve effect – just to name some of the new phenomena that have been detected in layered S/F hybrid nanostructures. Moreover, the detected effects are very promising for technical applications directed towards enhancing the storage capacity of computer hard drives and the potential use as quantum computer building blocks.

The main goal of this thematic issue is to highlight this new area of research – superconductor/ferromagnetic hybrid nanostructures and their applications for quantum electronics and spintronics. It is also intended to present some other interesting functional nanostructures, such as sensors and single-atom transistors, to highlight the fascinating world of nanoelectronics. 

Research contributions to this thematic issue may include but are not limited to the following topics:

  • Functional superconductor/ferromagnetic nanostructures
  • Proximity effect and Andreev reflection in superconductor/ferromagnetic hybrid structures
  • Non-uniform superconducting state, including triplet pairing
  • Spin-valve effect
  • Qubits and quantum computing
  • Josephson effect in S/F hybrid materials
  • Sensors and memory cells

Submission Deadline: May 31, 2020
(please contact the editor directly to request deadline extensions)

Anomalous current–voltage characteristics of SFIFS Josephson junctions with weak ferromagnetic interlayers

  1. Tairzhan Karabassov,
  2. Anastasia V. Guravova,
  3. Aleksei Yu. Kuzin,
  4. Elena A. Kazakova,
  5. Shiro Kawabata,
  6. Boris G. Lvov and
  7. Andrey S. Vasenko
  • Full Research Paper
  • Published 23 Jan 2020

  • PDF

Beilstein J. Nanotechnol. 2020, 11, 252–262, doi:10.3762/bjnano.11.19

High dynamic resistance elements based on a Josephson junction array

  1. Konstantin Yu. Arutyunov and
  2. Janne S. Lehtinen
  • Full Research Paper
  • Published 03 Mar 2020

  • PDF

Beilstein J. Nanotechnol. 2020, 11, 417–420, doi:10.3762/bjnano.11.32

Epitaxial growth and superconducting properties of thin-film PdFe/VN and VN/PdFe bilayers on MgO(001) substrates

  1. Wael M. Mohammed,
  2. Igor V. Yanilkin,
  3. Amir I. Gumarov,
  4. Airat G. Kiiamov,
  5. Roman V. Yusupov and
  6. Lenar R. Tagirov
  • Full Research Paper
  • Published 15 May 2020

  • PDF

Beilstein J. Nanotechnol. 2020, 11, 807–813, doi:10.3762/bjnano.11.65

  • Full Research Paper
  • Published 02 Jun 2020

  • PDF

Beilstein J. Nanotechnol. 2020, 11, 858–865, doi:10.3762/bjnano.11.71

Band tail state related photoluminescence and photoresponse of ZnMgO solid solution nanostructured films

  1. Vadim Morari,
  2. Aida Pantazi,
  3. Nicolai Curmei,
  4. Vitalie Postolache,
  5. Emil V. Rusu,
  6. Marius Enachescu,
  7. Ion M. Tiginyanu and
  8. Veaceslav V. Ursaki
  • Full Research Paper
  • Published 12 Jun 2020

  • PDF

Beilstein J. Nanotechnol. 2020, 11, 899–910, doi:10.3762/bjnano.11.75

Microwave photon detection by an Al Josephson junction

  1. Leonid S. Revin,
  2. Andrey L. Pankratov,
  3. Anna V. Gordeeva,
  4. Anton A. Yablokov,
  5. Igor V. Rakut,
  6. Victor O. Zbrozhek and
  7. Leonid S. Kuzmin
  • Full Research Paper
  • Published 23 Jun 2020

  • PDF

Beilstein J. Nanotechnol. 2020, 11, 960–965, doi:10.3762/bjnano.11.80

Electrochemical nanostructuring of (111) oriented GaAs crystals: from porous structures to nanowires

  1. Elena I. Monaico,
  2. Eduard V. Monaico,
  3. Veaceslav V. Ursaki,
  4. Shashank Honnali,
  5. Vitalie Postolache,
  6. Karin Leistner,
  7. Kornelius Nielsch and
  8. Ion M. Tiginyanu
  • Full Research Paper
  • Published 29 Jun 2020

  • PDF

Beilstein J. Nanotechnol. 2020, 11, 966–975, doi:10.3762/bjnano.11.81

  • Full Research Paper
  • Published 10 Jul 2020

  • PDF

Beilstein J. Nanotechnol. 2020, 11, 1010–1018, doi:10.3762/bjnano.11.85

Excitonic and electronic transitions in Me–Sb2Se3 structures

  1. Nicolae N. Syrbu,
  2. Victor V. Zalamai,
  3. Ivan G. Stamov and
  4. Stepan I. Beril
  • Full Research Paper
  • Published 16 Jul 2020

  • PDF

Beilstein J. Nanotechnol. 2020, 11, 1045–1053, doi:10.3762/bjnano.11.89

Keep Informed

RSS Feed

Subscribe to our Latest Articles RSS Feed.

Subscribe

Follow the Beilstein-Institut

LinkedIn

Twitter: @BeilsteinInst