Nanogenerators are an emerging technology that uses nanomaterials to harvest mechanical and thermal energy for generating electricity from ambient sources. The working principles of nanogenerators are based on triboelectric, piezoelectric, and thermoelectric effects of nanomaterials. Such novel energy conversion approaches are of critical importance for self-powered sensing, environmental monitoring, internet of things, energy harvesting, wearable devices, and flexible electronics.
Flexible electronics have attracted tremendous attention in recent years owing to their merits of bendability, elasticity, lightweight, easy fabrication, low cost and so on. Such advanced technology has been applied to developing flexible displays, electronic textiles, electronic skin, human–machine interfaces, and wearable devices. Flexible electronics could greatly boost the development of next-generation, intelligent, human friendly electronics.
This thematic issue aims to cover various strategies and ideas for future developments of nanogenerators and flexible electronics. The submitted works to this thematic issue may include, but are not limited to the following topics:
Submission Deadline EXTENDED to December 31, 2020
Figure 1: The manufacturing process of the TVB-TENG structure.
Figure 2: The working mechanism of the TVB-TENG structure.
Figure 3: (a) The output voltage (matched load of 100 MΩ) and (b) short-circuit current (matched load of 100 ...
Figure 4: The output voltage sensor feedback at different humidity levels: 40% (a), 50% (b), 60% (c), 70% (d)...
Figure 5: (a) The output voltage of the TVB-TENG as a function of RH (40–90%). (b) A representative photograp...
Figure 6: (a) Reversibility of a TVB-TENG-based humidity sensor. (b) The change in luminosity of thirty LEDs ...
Figure 1: A flexible undulated electrode-based triboelectric nanogenerator. (a) Schematic diagram of the fabr...
Figure 2: The working mechanism of the fabricated u-TENG in response to a stepping force. (a) The PTFE film a...
Figure 3: Electrical measurement results of the u-TENG. Open-circuit voltage (a) and short-circuit current (b...
Figure 4: The ability of the u-TENG to harvesting energy from human walking. The electric output profile of a...
Figure 5: Self-powered u-TENG-based location-tracking system. (a) Circuit diagram of the fabricated u-TENG-ba...
Figure 1: (a) Structure diagram of p-Si/n-ZnO NWs PDs. (b) Cross-sectional SEM image of the as-grown Si/ZnO N...
Figure 2: Working mechanism of PENGs. under zero bias, a depletion zone and corresponding built-in electric f...
Figure 3: Impact of the incident optical power density and periodic frequency on the short-circuit current. I...
Figure 4: Dynamic response characteristics I–t characteristics of PDs under zero bias and different incident ...
Figure 5: (a) Structure diagram of an ultra-thin (45 μm) p-Si/n-ZnO heterojunction device. (b) Optical image ...
Figure 1: (a) Schematic diagram of a self-powered PES based on GR-doped PVDF. (b) Schematic diagram of an eff...
Figure 2: (a) Preparation of the self-powered GR-doped PVDF PES. (b) SEM images of PVDF fibers with different...
Figure 3: (a) Schematic diagram of the PES under external pressure. (b) Output voltage as a function of the a...
Figure 4: (a) Output signal when a sign language “Y” is shown. (b) Output signal when a sign language “Hello”...
Figure 1: (a) Schematic diagram of the epitaxial structure. (b) STEM image taken of the AlGaN/AlN/GaN heteroj...
Figure 2: (a) Schematic diagrams after ICP dry etching, (b) during EC wet etching, (c) and of a single nanowi...
Figure 3: (a) Experimental setup showing the stress application on the AlGaN/AlN/GaN heterojunction NW-based ...
Figure 4: (a) I–t characteristic curve at a bias voltage of 0.2 V under tensile strain. (b) I–t characteristi...
Figure 5: Structure diagram showing the charge distribution of the AlGaN/AlN/GaN heterojunction NW under comp...