4 article(s) from Holmes, Justin D
Figure 1: Schematic depicting MLD processing applied to silicon on insulator wafers. It shows monolayer forma...
Figure 2: Electrochemical capacitance–voltage profile showing the impact of applying a SiO2 capping layer for...
Figure 3: AFM images of (a) as received SOI (b) SOI after MLD processing.
Figure 4: ECV plot of active carrier concentrations in a 66 nm SOI after MLD using a 50 nm sputtered SiO2 cap...
Figure 5: ECV plot of active carrier concentrations using bulk silicon samples to analyse the variation of th...
Figure 6: X-ray photoelectron spectroscopy (XPS) study showing that there is a degree of surface oxidation af...
Figure 7: Secondary ion mass spectrometry analysis of a P-MLD-doped 66 nm silicon on insulator substrate. Blu...
Figure 1: Characterization of Au-seeded Ge NWs. (a) TEM image of a Ge NW with an Au nanoparticle at the tip. ...
Figure 2: Radius-dependent charge transport properties in Ge NWs. (a) Electrical conductivity, (b) mobility a...
Figure 3: Carrier-density dependent transport properties in Ge NWs. (a) Electrical conductivity and (b) mobil...
Figure 4:
Characteristic length scales in Ge NWs. 3D Debye and 1D screening length λ(1D) as function of carr...
Figure 1: Resistivity of nanowires with 40 to 11 nm diameter. The resistivity decreases by two orders of magn...
Figure 2: (a) Schematic diagram of the volume in which holes are predominantly located for (left) a wire with...
Figure 3: (a) Calculated nanowire resistivity from 22 to 11 nm diameter. Around 14 nm a peak-feature is found...
Figure 1: In situ resonance excitation of Sb2S3 NW. SEM images of NW with dimensions: length L = 10 μm and ra...
Figure 2: SEM images of resonantly excited Sb2S3 NW with rectangular cross-section, showing two mutually orth...
Figure 3: Young’s modulus of Sb2S3 NWs as a function of their size. Data points represent the measured Young’...
Figure 4: a) Schematic of the static bending of a single Sb2S3 NW. SEM images of the NW b) in a relaxed state...