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Search for "focused ion beam" in Full Text gives 122 result(s) in Beilstein Journal of Nanotechnology.

New design of operational MEMS bridges for measurements of properties of FEBID-based nanostructures

  • Bartosz Pruchnik,
  • Krzysztof Kwoka,
  • Ewelina Gacka,
  • Dominik Badura,
  • Piotr Kunicki,
  • Andrzej Sierakowski,
  • Paweł Janus,
  • Tomasz Piasecki and
  • Teodor Gotszalk

Beilstein J. Nanotechnol. 2024, 15, 1273–1282, doi:10.3762/bjnano.15.103

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  • ). However, parasitic strain can cause unforeseen static changes in the geometry of the RoI. This problem is addressed by focused ion beam (FIB) technology, which can be used as a strain engineering tool. We will refer to MEMS with a formed RoI as operational MEMS, or opMEMS for short. In contrast to
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Published 23 Oct 2024

A low-kiloelectronvolt focused ion beam strategy for processing low-thermal-conductance materials with nanoampere currents

  • Annalena Wolff,
  • Nico Klingner,
  • William Thompson,
  • Yinghong Zhou,
  • Jinying Lin and
  • Yin Xiao

Beilstein J. Nanotechnol. 2024, 15, 1197–1207, doi:10.3762/bjnano.15.97

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  • milling speed but reduced heat damage. Keywords: biological sample; COMSOL; focused ion beam; forward time–centered space (FTCS); heat damage; SRIM; Introduction FIB-SEMs combine a scanning electron microscope (SEM) and a focused ion beam (FIB) in a single instrument and are increasingly used to prepare
  • ps. A scanned beam will generally not have moved away from any impact site before 100 ns have elapsed. These 100 ns are currently the typical minimal dwell time for most FIB machines. Consequently, for a 1 nA beam, approximately 625 ions will impact the same scan point before the focused ion beam
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Published 27 Sep 2024

Level set simulation of focused ion beam sputtering of a multilayer substrate

  • Alexander V. Rumyantsev,
  • Nikolai I. Borgardt,
  • Roman L. Volkov and
  • Yuri A. Chaplygin

Beilstein J. Nanotechnol. 2024, 15, 733–742, doi:10.3762/bjnano.15.61

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  • Alexander V. Rumyantsev Nikolai I. Borgardt Roman L. Volkov Yuri A. Chaplygin National Research University of Electronic Technology - MIET, Bld. 1, Shokin Square, Zelenograd, Moscow, 124498, Russia 10.3762/bjnano.15.61 Abstract The evolution of a multilayer sample surface during focused ion beam
  • understanding of the sputtering process, the distribution of oxygen atoms in the redeposited layer derived from the numerical data was compared with the corresponding elemental map acquired by energy-dispersive X-ray microanalysis. Keywords: electron microscopy; focused ion beam; level set simulation
  • ; multilayer substrate; silicon; silicon dioxide; sputtering; Introduction The focused ion beam (FIB) technique is an effective method for surface nanostructuring. It is based on the local removal of material by sputtering with a narrow beam of, typically, gallium ions. This feature of the FIB method makes it
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Published 24 Jun 2024

Sidewall angle tuning in focused electron beam-induced processing

  • Sangeetha Hari,
  • Willem F. van Dorp,
  • Johannes J. L. Mulders,
  • Piet H. F. Trompenaars,
  • Pieter Kruit and
  • Cornelis W. Hagen

Beilstein J. Nanotechnol. 2024, 15, 447–456, doi:10.3762/bjnano.15.40

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  • using focused ion beam (FIB) milling and shown as an electron tilt image in Figure 1b, clearly demonstrates the Gaussian shape. For lithography applications, however, both the long tails and the Gaussian cross section are highly undesirable. The tails may form interconnects to neighboring lines, and the
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Published 23 Apr 2024

Ion beam processing of DNA origami nanostructures

  • Leo Sala,
  • Agnes Zerolová,
  • Violaine Vizcaino,
  • Alain Mery,
  • Alicja Domaracka,
  • Hermann Rothard,
  • Philippe Boduch,
  • Dominik Pinkas and
  • Jaroslav Kocišek

Beilstein J. Nanotechnol. 2024, 15, 207–214, doi:10.3762/bjnano.15.20

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  • common type of beam processing, namely focused ion beam technology (FIB). Following the results of high- and medium-energy ion irradiation on deposited DNA origami nanostructures, which will be presented in this work, we wanted to explore whether we could observe similar effects using a commonly used
  • detector was calibrated beforehand using a Faraday cup. Focused ion beam irradiation A Tescan Amber FIB-SEM was used to etch the sample surface. A Ga+ focused ion beam was used (E = 30 keV, I = 10 pA) to draw 10 μm trenches with a nominal depth of 100 nm using single line scan. This resulted in actual
  • origami but also their transformation upon irradiation. FIB processing Inspired by the shape preservation of DNA origami nanostructures under ion beam irradiation, we explored the damage response under a conventional focused ion beam typically used in lithography. Lines of about ∼140 nm in width ∼40 nm in
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Published 12 Feb 2024

Graphene removal by water-assisted focused electron-beam-induced etching – unveiling the dose and dwell time impact on the etch profile and topographical changes in SiO2 substrates

  • Aleksandra Szkudlarek,
  • Jan M. Michalik,
  • Inés Serrano-Esparza,
  • Zdeněk Nováček,
  • Veronika Novotná,
  • Piotr Ozga,
  • Czesław Kapusta and
  • José María De Teresa

Beilstein J. Nanotechnol. 2024, 15, 190–198, doi:10.3762/bjnano.15.18

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  • -beam bombardment, which initially introduces defects into the graphene structure and then knocks out carbon atoms, although the edges of the fabricated nanostructures remain rough after the process [11]. Other direct techniques, such as focused ion beam (FIB) milling with heavy Ga+ ions, are not
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Published 07 Feb 2024

TEM sample preparation of lithographically patterned permalloy nanostructures on silicon nitride membranes

  • Joshua Williams,
  • Michael I. Faley,
  • Joseph Vimal Vas,
  • Peng-Han Lu and
  • Rafal E. Dunin-Borkowski

Beilstein J. Nanotechnol. 2024, 15, 1–12, doi:10.3762/bjnano.15.1

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  • submicrometer apertures were milled on SiN membranes using a focused ion beam. Furthermore, we have developed a new TEM sample preparation method, where we fabricated Py nanostructures on a bulk substrate with a SiN buffer layer and etched the substrate to create a thin SiN membrane under the Py nanostructure
  • ion beam. This method avoids the resist-based fabrication, which is common in preparing nanodisk samples for TEM [8][20]. We have also developed a method of sample preparation for patterned nanostructures starting from a bulk substrate. This method is versatile and might be useful for more complicated
  • . Fences and edge roughness from the imperfect lift-off process were reported to influence the magnetic properties of nanostructures [22]. The third method, stencil lithography, makes use of a shadow mask, which was fabricated by milling submicrometer apertures on a conventional TEM grid using a focused
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Published 02 Jan 2024

Exploring internal structures and properties of terpolymer fibers via real-space characterizations

  • Michael R. Roenbeck and
  • Kenneth E. Strawhecker

Beilstein J. Nanotechnol. 2023, 14, 1004–1017, doi:10.3762/bjnano.14.83

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  • investigated the processing and properties of high-performance terpolymer fibers, much remains to be understood about the internal nano- and microstructures of these fibers, and how these morphologies relate to fiber properties. Here we use a focused ion beam notch technique and multifrequency atomic force
  • features at different length scales and verify the applicability of analytical structural models used to date. Over the last several years, a “focused ion beam (FIB) notch” technique has been developed and employed to address these gaps in understanding of the internal structures of fibers such as Kevlar
  • chamber [9]. Kevlar® K29 fibers also discussed in this report underwent the same preparation techniques. Focused ion beam notching Conductively coated fibers were cut with a FIB as discussed in detail in an earlier study [9]. In summary, 2–3 μm wide through-cuts were notched into each fiber (Figure 1b
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Published 05 Oct 2023

Ultralow-energy amorphization of contaminated silicon samples investigated by molecular dynamics

  • Grégoire R. N. Defoort-Levkov,
  • Alan Bahm and
  • Patrick Philipp

Beilstein J. Nanotechnol. 2023, 14, 834–849, doi:10.3762/bjnano.14.68

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  • , Luxembourg Thermo Fisher Scientific, Hillsboro, OR, 97124, USA 10.3762/bjnano.14.68 Abstract Ion beam processes related to focused ion beam milling, surface patterning, and secondary ion mass spectrometry require precision and control. Quality and cleanliness of the sample are also crucial factors
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Published 01 Aug 2023

Observation of collective excitation of surface plasmon resonances in large Josephson junction arrays

  • Roger Cattaneo,
  • Mikhail A. Galin and
  • Vladimir M. Krasnov

Beilstein J. Nanotechnol. 2022, 13, 1578–1588, doi:10.3762/bjnano.13.132

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  • using photolithography and reactive ion etching. The JJ sensor with variable thickness and a width of ≈100 nm is made by Ga+ focused ion beam etching. The JJ is made small in order to increase its resistance Rn to approx. 50 Ω, which is needed for a good impedance matching with the antenna. In order to
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Published 28 Dec 2022

Laser-processed antiadhesive bionic combs for handling nanofibers inspired by nanostructures on the legs of cribellate spiders

  • Sebastian Lifka,
  • Kristóf Harsányi,
  • Erich Baumgartner,
  • Lukas Pichler,
  • Dariya Baiko,
  • Karsten Wasmuth,
  • Johannes Heitz,
  • Marco Meyer,
  • Anna-Christin Joel,
  • Jörn Bonse and
  • Werner Baumgartner

Beilstein J. Nanotechnol. 2022, 13, 1268–1283, doi:10.3762/bjnano.13.105

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  • gold-sputtered (S150B, Edwards). The metatarsi were examined using a focused ion beam scanning electron microscope (FIB-SEM) tomography (Strata 400 STEM, FEI Company, Oregon, USA) at the Central Facility for Electron Microscopy at the RWTH Aachen University. Measurements were performed using the
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Published 07 Nov 2022

Topographic signatures and manipulations of Fe atoms, CO molecules and NaCl islands on superconducting Pb(111)

  • Carl Drechsel,
  • Philipp D’Astolfo,
  • Jung-Ching Liu,
  • Thilo Glatzel,
  • Rémy Pawlak and
  • Ernst Meyer

Beilstein J. Nanotechnol. 2022, 13, 1–9, doi:10.3762/bjnano.13.1

Graphical Abstract
  • [47] operated in the frequency-modulation mode (resonance frequency f0 ≈ 25 kHz, spring constant k ≈ 1800 N/m, quality factor Q ≈ 14000, and oscillation amplitude A ≈ 0.5 Å). The tip mounted to the qPlus sensor consists of a 25 μm-thick PtIr wire, shortened and sharpened with a focused ion beam. A
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Published 03 Jan 2022

Measurement of polarization effects in dual-phase ceria-based oxygen permeation membranes using Kelvin probe force microscopy

  • Kerstin Neuhaus,
  • Christina Schmidt,
  • Liudmila Fischer,
  • Wilhelm Albert Meulenberg,
  • Ke Ran,
  • Joachim Mayer and
  • Stefan Baumann

Beilstein J. Nanotechnol. 2021, 12, 1380–1391, doi:10.3762/bjnano.12.102

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  • , KPFM measurements were started with an imaging velocity of 1 image per minute to measure the relaxation of the introduced gradient. Electron microscopy The TEM specimens were cut from 60CSO20-FC2O pellets by focused ion beam (FIB) milling using a FEI Strata400 system with Ga ion beam. Further thinning
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Published 15 Dec 2021

Chemical vapor deposition of germanium-rich CrGex nanowires

  • Vladislav Dřínek,
  • Stanislav Tiagulskyi,
  • Roman Yatskiv,
  • Jan Grym,
  • Radek Fajgar,
  • Věra Jandová,
  • Martin Koštejn and
  • Jaroslav Kupčík

Beilstein J. Nanotechnol. 2021, 12, 1365–1371, doi:10.3762/bjnano.12.100

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  • transfer single NWs onto contact lithographic pads (Supporting Information File 1, Figure S9) to measure their conductivity. The NWs, however, turned out to be fragile and were destroyed when an attempt was made to cut them from the tungsten tip using a focused ion beam (FIB). Therefore, a method to
  • with the Ga+ focused ion beam (FIB), gas injection system (GIS), and nanomanipulator OmniProbe 400 (Oxford Instruments) with a tungsten tip. The nanomanipulator enabled a direct contact of single as-grown NWs. The current–voltage (I–V) characteristics were measured using a Keithley 237 source
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Published 07 Dec 2021

Is the Ne operation of the helium ion microscope suitable for electron backscatter diffraction sample preparation?

  • Annalena Wolff

Beilstein J. Nanotechnol. 2021, 12, 965–983, doi:10.3762/bjnano.12.73

Graphical Abstract
  • commonly used approach is the focused ion beam (FIB) polishing. Unfortunately, artefacts that can be easily induced by Ga FIB polishing approaches are seldom published. This work aims to provide a better understanding of the underlying causes for artefact formation and to assess if the helium ion
  • elsewhere [31]. Throughout the past years, Ga-focused ion beam/scanning electron microscopes (Ga FIB/SEMs) have been used to polish samples [32][33]. Although it is recognized within the FIB community that Ga can induce artefacts in the sample [34][35][36][37], many of the encountered artefacts, which can
  • and Discussion To assess the impact of polishing samples for EBSD with a focused ion beam, Cu TEM grids were polished using different ion species (Ga, Ne) at different energies and incidence angles. A schematic overview of the experiments is given in Figure 2. STEM, TEM, SAED, as well as EBSD
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Published 31 Aug 2021

Recent progress in actuation technologies of micro/nanorobots

  • Ke Xu and
  • Bing Liu

Beilstein J. Nanotechnol. 2021, 12, 756–765, doi:10.3762/bjnano.12.59

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  • towards the platinum end, and a maximum movement speed of 4 μm/s was achieved. After that, Chen et al. [40] designed a Z-shaped platinum hybrid nanorobot in order to meet the growing demand for micro/nanorobots in the biomedical field. It was manufactured using a combination of focused ion beam and plasma
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Published 20 Jul 2021

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

  • Frances I. Allen

Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52

Graphical Abstract
  • focused ion beam as it is scanned across the sample. Compared with the scanning electron microscope (SEM), the HIM offers enhanced surface sensitivity, greater topographic contrast, and a larger depth of field [4][5]. A charge-neutralization system based on flooding the scanned region with low-energy
  • backscattered helium ions and ionoluminescence [5]. Beyond microscopy and microanalysis, the HIM is also widely employed for materials processing, using the focused ion beam to intentionally modify the sample in some way. These operations essentially fall into two categories: At lower ion doses, various
  • interaction volume and resulting modification of the sample for helium ions impinging on bulk silicon and copper targets providing key insights into the beam–sample interaction [16]. Dose series were conducted and the interaction volumes directly visualized by preparing cross sections by gallium focused ion
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Published 02 Jul 2021

Spontaneous shape transition of MnxGe1−x islands to long nanowires

  • S. Javad Rezvani,
  • Luc Favre,
  • Gabriele Giuli,
  • Yiming Wubulikasimu,
  • Isabelle Berbezier,
  • Augusto Marcelli,
  • Luca Boarino and
  • Nicola Pinto

Beilstein J. Nanotechnol. 2021, 12, 366–374, doi:10.3762/bjnano.12.30

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  • and 25 mA with a graphite monochromator. Step-scan diffractograms were collected in the 2θ range of 3–70° with 0.02° step and 3 s/step counting time. For HRTEM analysis, focused ion beam (FIB) lamellae were prepared using a dual-beam FIB. The lamellae were oriented along the elongation direction. The
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Published 28 Apr 2021

The patterning toolbox FIB-o-mat: Exploiting the full potential of focused helium ions for nanofabrication

  • Victor Deinhart,
  • Lisa-Marie Kern,
  • Jan N. Kirchhof,
  • Sabrina Juergensen,
  • Joris Sturm,
  • Enno Krauss,
  • Thorsten Feichtner,
  • Sviatoslav Kovalchuk,
  • Michael Schneider,
  • Dieter Engel,
  • Bastian Pfau,
  • Bert Hecht,
  • Kirill I. Bolotin,
  • Stephanie Reich and
  • Katja Höflich

Beilstein J. Nanotechnol. 2021, 12, 304–318, doi:10.3762/bjnano.12.25

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  • nanometer range is heavily sought after. One promising candidate for ultraprecise nanofabrication is focused ion beam (FIB) machining. Focused ion beams locally remove material based on physical sputtering with a large degree of flexibility due to advanced beam control. FIB patterning is a direct single
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Published 06 Apr 2021

Mapping the local dielectric constant of a biological nanostructured system

  • Wescley Walison Valeriano,
  • Rodrigo Ribeiro Andrade,
  • Juan Pablo Vasco,
  • Angelo Malachias,
  • Bernardo Ruegger Almeida Neves,
  • Paulo Sergio Soares Guimarães and
  • Wagner Nunes Rodrigues

Beilstein J. Nanotechnol. 2021, 12, 139–150, doi:10.3762/bjnano.12.11

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  • . The scanning electron microscopy (SEM) image presented in Figure 2 shows the nanostructured section of a fragment of the red region indicated in Figure 1a. The section was partially polished using a focused ion beam (FIB) and the multilayered structure is clearly visible. The corrugated surface is the
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Published 28 Jan 2021

Bio-imaging with the helium-ion microscope: A review

  • Matthias Schmidt,
  • James M. Byrne and
  • Ilari J. Maasilta

Beilstein J. Nanotechnol. 2021, 12, 1–23, doi:10.3762/bjnano.12.1

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  • Souza and Attias nicely placed HIM imaging in the context of high-resolution SEM, environmental SEM, cryo-SEM, the usage of cyto-chemistry, and 3D reconstruction with focused ion beam SEM and TEM [85]. Biofilms The large depth of field, the efficient charge compensation and the strong edge contrast make
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Published 04 Jan 2021

Imaging and milling resolution of light ion beams from helium ion microscopy and FIBs driven by liquid metal alloy ion sources

  • Nico Klingner,
  • Gregor Hlawacek,
  • Paul Mazarov,
  • Wolfgang Pilz,
  • Fabian Meyer and
  • Lothar Bischoff

Beilstein J. Nanotechnol. 2020, 11, 1742–1749, doi:10.3762/bjnano.11.156

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  • /bjnano.11.156 Abstract While the application of focused ion beam (FIB) techniques has become a well-established technique in research and development for patterning and prototyping on the nanometer scale, there is still a large underused potential with respect to the usage of ion species other than
  • resolution of Ne+ from a gas field ion source. The comparison allows one to select the best possible ion species for the specific demands in terms of resolution, beam current, and volume to be drilled. Keywords: focused ion beam; gas field ion source; liquid metal alloy ion source; resolution; Introduction
  • In modern nanotechnology, focused ion beam (FIB) techniques are well-established for nanoscale structuring, local surface modification, doping, prototyping, as well as for ion beam analysis. One of the main components of such a FIB system is the ion source providing the needed ion species [1
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Published 18 Nov 2020

Out-of-plane surface patterning by subsurface processing of polymer substrates with focused ion beams

  • Serguei Chiriaev,
  • Luciana Tavares,
  • Vadzim Adashkevich,
  • Arkadiusz J. Goszczak and
  • Horst-Günter Rubahn

Beilstein J. Nanotechnol. 2020, 11, 1693–1703, doi:10.3762/bjnano.11.151

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  • of the polymer. Effects of subsurface and surface processes on the surface morphology have been studied for three polymer materials: poly(methyl methacrylate), polycarbonate, and polydimethylsiloxane, by using focused ion beam irradiation with He+, Ne+, and Ga+. Thin films of a Pt60Pd40 alloy and of
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Published 06 Nov 2020

Oxidation of Au/Ag films by oxygen plasma: phase separation and generation of nanoporosity

  • Abdel-Aziz El Mel,
  • Said A. Mansour,
  • Mujaheed Pasha,
  • Atef Zekri,
  • Janarthanan Ponraj,
  • Akshath Shetty and
  • Yousef Haik

Beilstein J. Nanotechnol. 2020, 11, 1608–1614, doi:10.3762/bjnano.11.143

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  • increased in size (Figure 3e,f). To investigate whether the formed nanoporous microspheres have a hollow interior or not, a cross-section SEM specimen from the sample oxidized for 30 min was prepared using focused ion beam (FIB) (Figure 3e). According to the results, the microspheres were not hollow and the
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Published 22 Oct 2020

Fabrication of nano/microstructures for SERS substrates using an electrochemical method

  • Jingran Zhang,
  • Tianqi Jia,
  • Xiaoping Li,
  • Junjie Yang,
  • Zhengkai Li,
  • Guangfeng Shi,
  • Xinming Zhang and
  • Zuobin Wang

Beilstein J. Nanotechnol. 2020, 11, 1568–1576, doi:10.3762/bjnano.11.139

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  • ion beam (FIB) technology can also be used to directly fabricate high-precision nanostructures on surfaces made of silicon, silicon dioxide and metal [27][28][29][30][31][32][33]. FIB technology is therefore used as a processing method for SERS substrates. Using the FIB method, Lin et al. [29
  • achieved for 4-mercaptobenzoic acid molecules on the arrayed Au nanoholes. However, lithography-based methods have limitations, as they are inefficient and cannot be exploited for mass production. In addition, it is challenging to use the existing methods to fabricate more complex nanostructures. Focused
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Published 16 Oct 2020
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