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Search for "SiO2/Si substrate" in Full Text gives 34 result(s) in Beilstein Journal of Nanotechnology.
Sub-nanosecond light-pulse generation with waveguide-coupled carbon nanotube transducers
Beilstein J. Nanotechnol. 2017, 8, 38–44, doi:10.3762/bjnano.8.5
- electron beam lithography on top of Si3N4/SiO2/Si substrate. Au/Cr contacts were produced by physical vapor deposition, and 600 nm wide, half-etched Si3N4-waveguides were formed with reactive ion etching. A typical sample contains tens of contact pairs and CNTs that were placed in between using
Orientation of FePt nanoparticles on top of a-SiO2/Si(001), MgO(001) and sapphire(0001): effect of thermal treatments and influence of substrate and particle size
Beilstein J. Nanotechnol. 2016, 7, 591–604, doi:10.3762/bjnano.7.52
- Figure 2a the RHEED pattern for a 3 nm Fe48Pt52 film on a SiO2/Si substrate is presented after post annealing at 650 °C for 30 min. A diffuse intensity distribution is observed without any superposed streaks or spots. The bright ring around the direct beam is a halo feature due to the RHEED arrangement
Formation of pure Cu nanocrystals upon post-growth annealing of Cu–C material obtained from focused electron beam induced deposition: comparison of different methods
Beilstein J. Nanotechnol. 2015, 6, 1508–1517, doi:10.3762/bjnano.6.156
- conventionally or with a laser the flat morphology of square, line, or tip deposits on the pre-patterned SiO2/Si substrate changes (Figure 3 and Figure 4). While the laser allows for local heating, the conventional hotplate approach allows for more accurate temperature measurements. The visible onset of Cu
- nanocrystal precipitation on the deposit surface starts at around 150 °C for the Cu(hfac)2 deposits on the pre-patterned SiO2/Si substrate. Further heating to about 200 °C for 30 min did not visibly change the appearance of the Cu nanocrystal precipitation. EDX analysis after conventional heating to 200 °C
Analytical development and optimization of a graphene–solution interface capacitance model
Beilstein J. Nanotechnol. 2014, 5, 603–609, doi:10.3762/bjnano.5.71
- -based devices, graphene with its outstanding properties such as consuming less energy and faster heat dissipating show a great promise in electrolyte-gated graphene field-effect transistors (EGFETs) [20]. An EGFET fabricated on a SiO2/Si substrate with gold source and drain electrodes and a graphene
Effect of contaminations and surface preparation on the work function of single layer MoS2
Beilstein J. Nanotechnol. 2014, 5, 291–297, doi:10.3762/bjnano.5.32
- measurements were performed under ambient conditions using amplitude modulated KPFM, both having a great impact on the results. In this work we study the work function of SLM on a standard SiO2/Si substrate using non-contact atomic force microscopy (NC-AFM) and Kelvin probe force microscopy in situ. In our
Fabrication of carbon nanomembranes by helium ion beam lithography
Beilstein J. Nanotechnol. 2014, 5, 188–194, doi:10.3762/bjnano.5.20
- cross-linked SAM is transferred onto another substrate, e.g., SiO2/Si. Figure 1e demonstrates a successful transfer of structured CNMs in Chinese characters which means nanomembranes: the grey background is SiO2/Si substrate and the darker features are transferred CNMs. For the fabrication of
- been transferred onto a SiO2/Si substrate. Interestingly, the first step is the formation of circular shaped nuclei, which is analogous to the nucleation for thin films or polymer crystallization [23]. After a dose of 176 µC/cm2 (Figure 3a), the average diameter of the nuclei is 9.0 ± 1.7 nm, which
- were transferred onto another substrate for further investigations again with the HIM. For the transfer of NBPT CNMs onto a SiO2/Si substrate the samples were spin-coated with a layer of poly(methyl methacrylate) (PMMA) for stabilization and baked on a hotplate at 90 °C for 5 min. The separation of the
Ordered arrays of nanoporous gold nanoparticles
Beilstein J. Nanotechnol. 2012, 3, 651–657, doi:10.3762/bjnano.3.74
- samples in a 65 wt % HNO3 solution at 21 °C for 5 min. A reference sample (15 nm Au/20 nm Ag bilayers on a flat SiO2/Si substrate) was processed by annealing at 900 °C in Ar for 15 min and then submerging in a 65 wt % HNO3 solution at 21 °C for 5 min. The SiO2 thickness of the reference sample is 100 nm
Imaging ultra thin layers with helium ion microscopy: Utilizing the channeling contrast mechanism
Beilstein J. Nanotechnol. 2012, 3, 507–512, doi:10.3762/bjnano.3.58
- surface layer of the relevant material (SiO2, PFS, or MS). As a consequence of the identical strip width for PFS and MS strips, we do not know a priori which stripe is which. However, we assign the bright structureless areas to the uncovered SiO2/Si substrate. It is understood that because of the
Formation of precise 2D Au particle arrays via thermally induced dewetting on pre-patterned substrates
Beilstein J. Nanotechnol. 2011, 2, 318–326, doi:10.3762/bjnano.2.37
- symmetry (substrate B). SEM images of induced particles on the flat SiO2/Si substrate after dewetting of the 5 nm (a) and 60 nm (b) thick Au films. (c) Histograms of particle size distributions produced by the dewetting of the 5 nm, 10 nm, 20 nm, 30 nm, 40 nm, and 60 nm thick Au films on the flat SiO2/Si
- substrate A have a spatial period of 513 nm and a depth of 150 nm. The holes in the substrate B have the same spatial period of 513 nm, a diameter of about 490 nm, and a depth of 120 nm. Figure 2 shows the SEM images of the Au particles formed from the 5 nm and 60 nm thick Au films on a flat SiO2/Si
- substrate. Usually, flat substrates lead to a broad distribution of particle size and spacing of the dewetted particles. Figure 2c shows the particle size distributions produced by dewetting of Au films with thicknesses from 5 nm to 60 nm on the flat substrates. Both, mean particle size
and the width
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