Lithium niobate on insulator: an emerging nanophotonic crystal for optimized light control

• Midhun Murali,
• Amit Banerjee and
• Tanmoy Basu

Beilstein J. Nanotechnol. 2024, 15, 1415–1426, doi:10.3762/bjnano.15.114

• implantation, the wafer is bonded to a SiO2 (or TiO2) substrate using direct bonding techniques, which involves bringing the surfaces into close contact and applying pressure or heat to form a strong bond. The wafer is then subjected to thermal annealing, which activates the splitting process along the

Various CVD-grown ZnO nanostructures for nanodevices and interdisciplinary applications

• The-Long Phan,
• Le Viet Cuong,
• Vu Dinh Lam and
• Ngoc Toan Dang

Beilstein J. Nanotechnol. 2024, 15, 1390–1399, doi:10.3762/bjnano.15.112

• annealing Zn powder under atmospheric pressure conditions, we collected nanocrystals with various morphologies, including rods, pencils, sheets, combs, tetrapods, and multilegs. Raman scattering study reveals that the samples are monophasic with a hexagonal structure, and fall into the P63mc space group

The role of a tantalum interlayer in enhancing the properties of Fe₃O₄ thin films

• Hai Dang Ngo,
• Vo Doan Thanh Truong,
• Van Qui Le,
• Hoai Phuong Pham and
• Thi Kim Hang Pham

Beilstein J. Nanotechnol. 2024, 15, 1253–1259, doi:10.3762/bjnano.15.101

• process [14][15]. The impact of substrate temperature, annealing temperature, gas flow rate, and thickness on enhancing the characteristics of Fe3O4 thin films has been examined [15][16][17][18]. The substrates play a crucial role in directing the growth and enhancing the quality of the crystal, resulting

Local work function on graphene nanoribbons

• Daniel Rothhardt,
• Amina Kimouche,
• Tillmann Klamroth and
• Regina Hoffmann-Vogel

Beilstein J. Nanotechnol. 2024, 15, 1125–1131, doi:10.3762/bjnano.15.91

• -dependent measurements. Experimental The experiments were conducted in an Omicron VT-SFM system (base pressure 2 × 10−10 mbar). The Au(111) single crystal substrate (Mateck GmbH) was cleaned by repeated Ar ion sputtering–annealing cycles. The cleanliness of the samples was checked by SFM measurements. Then

• , 10,10′-dibromo-9,9′-bianthryl (DBBA) molecules were deposited by thermal evaporation (Kentax evaporator) onto the hot (Tsample = 470 K) sample surface for 10 min. The deposition rate was kept constant using a quartz crystal microbalance. Annealing up to 670 K for 10 min after deposition induced

• (f0 = 292 kHz, cL = 41 N/m) were used for imaging in the frequency modulation (FM) mode operated by a Nanonis electronic system. The tips were cleaned by sputtering (Ar pressure 5 × 10−3 Pa, energy 1 keV, 15 min) and annealing up to 375 K for 1–5 h (pressure below 1 × 10−7 Pa) prior to measurement

Effect of repeating hydrothermal growth processes and rapid thermal annealing on CuO thin film properties

• Monika Ozga,
• Eunika Zielony,
• Aleksandra Wierzbicka,
• Anna Wolska,
• Marcin Klepka,
• Marek Godlewski,
• Bogdan J. Kowalski and
• Bartłomiej S. Witkowski

Beilstein J. Nanotechnol. 2024, 15, 743–754, doi:10.3762/bjnano.15.62

• and Technology, Wybrzeze Wyspiańskiego 27, 50–370 Wroclaw, Poland 10.3762/bjnano.15.62 Abstract This paper presents an investigation into the influence of repeating cycles of hydrothermal growth processes and rapid thermal annealing (HT+RTA) on the properties of CuO thin films. An innovative

• devices. Keywords: CuO; hydrothermal method; rapid thermal annealing; thin films; Introduction Copper(II) oxide is a p-type semiconductor possessing a narrow bandgap, along with many beneficial electrical, optical, and magnetic properties. Particularly at the nanoscale, these properties set themselves

• focuses on hydrothermally grown CuO films. There are only a few reports in the literature indicating the use of this method for the growth of CuO films. An example of a multistep method of producing CuO films has been described in [43]. It combines the hydrothermal process, annealing, and spin coating

Directed growth of quinacridone chains on the vicinal Ag(35 1 1) surface

• Niklas Humberg,
• Lukas Grönwoldt and
• Moritz Sokolowski

Beilstein J. Nanotechnol. 2024, 15, 556–568, doi:10.3762/bjnano.15.48

• from Pfeiffer Vacuum. The vicinal Ag(35 1 1) crystal was obtained from MaTecK and cleaned by repeated cycles of sputtering and subsequent annealing at 700 K for 45 min. We tested whether a variation of the annealing temperatures between 500 and 800 K has an influence on the step distribution of the

• are more stable than the single chains with the same orientations B and D of the α-phase because of their commensurate nature. Hence, they do not completely transform into the domains of orientations A and C. One might also ask whether annealing the sample at 500 K for a longer time, or several

• consecutive annealing steps at 500 K, might further change the ratio in favor of orientations A and C. This was not the case. We observed the same intensity ratio between the stronger and weaker spots in the LEED pattern after every preparation and several consecutive annealing cycles. This can be explained

Electron-induced deposition using Fe(CO)₄MA and Fe(CO)₅ – effect of MA ligand and process conditions

• Hannah Boeckers,
• Atul Chaudhary,
• Petra Martinović,
• Amy V. Walker,
• Lisa McElwee-White and
• Petra Swiderek

Beilstein J. Nanotechnol. 2024, 15, 500–516, doi:10.3762/bjnano.15.45

• with more than 90 atom % Fe were obtained [19], presumably related to electron beam heating effects. However, attempts to purify deposits with initial Fe contents of only 40 atom % by annealing up to 700 °C led to phase segregation into a highly pure and crystalline Fe phase and a carbonaceous material

• irradiation. In cryo-EBID experiments, the precursor was condensed on the Ta substrate held at 100 K, after which electron irradiation was performed. After each deposition step, the remaining volatile species were removed by a TDS run followed by annealing. AES was again measured after sputter cleaning the Ta

• . Considering, however, the low volatility of the MA ligand at 100 K and the absence of signals of MA in ESD (see section Electron-stimulated desorption from condensed Fe(CO)4MA), it is likely that the ligand either desorbs during thermal annealing after electron irradiation or is decomposed to smaller and more

Unveiling the nature of atomic defects in graphene on a metal surface

• Karl Rothe,
• Nicolas Néel and
• Jörg Kröger

Beilstein J. Nanotechnol. 2024, 15, 416–425, doi:10.3762/bjnano.15.37

• of defects. Experimental A combined STM-AFM was operated in ultrahigh vacuum (5 × 10−9 Pa) and at low temperature (5 K). Surfaces of Ir(111) were cleaned by Ar+ ion bombardement and annealing. The epitaxial growth of graphene proceeded by exposing the heated (1300 K) Ir(111) surface to the gaseous

• molecular precursor C2H4 (purity: 99.9%) at a partial pressure of 10−5 Pa for 120 s [25][26]. Atomic-scale defects were created by bombarding graphene-covered Ir(111) with low-energy (140 eV) Ar+ ions (purity of the Ar gas: 99.999%) [27][28][29][30] at room temperature for 5 s followed by annealing (900 K

Controllable physicochemical properties of WO_x thin films grown under glancing angle

• Rupam Mandal,
• Aparajita Mandal,
• Alapan Dutta,
• Rengasamy Sivakumar,
• Sanjeev Kumar Srivastava and
• Tapobrata Som

Beilstein J. Nanotechnol. 2024, 15, 350–359, doi:10.3762/bjnano.15.31

• sputtering for optoelectronic applications. A glancing angle of 87° is employed to grow films of different thicknesses, which are then exposed to post-growth annealing. Detailed local probe analyses in terms of morphology and work function of WOx films are carried out to investigate thickness-dependent

• fabricating WOx-based optoelectronic devices, including photovoltaic cells. Keywords: annealing; glancing angle sputter deposition; heterojunction; tungsten oxide; work function; Introduction Tungsten oxide (WOx; x ≤ 3) is a popular transition-metal oxide for various optoelectronic devices because of its

• structural, optical, and electrical properties of glancing angle-deposited NS-WOx thin films, where NS-WOx films of different thicknesses (6–60 nm) are prepared by rf sputtering and exposed to post-growth annealing at 673 K in vacuum (2 × 10−7 mbar). The role of increased oxygen vacancy concentration (OV) on

In situ optical sub-wavelength thickness control of porous anodic aluminum oxide

• Aleksandrs Dutovs,
• Raimonds Popļausks,
• Oskars Putāns,
• Vladislavs Perkanuks,
• Aušrinė Jurkevičiūtė,
• Tomas Tamulevičius,
• Uldis Malinovskis,
• Iryna Olyshevets,
• Donats Erts and
• Juris Prikulis

Beilstein J. Nanotechnol. 2024, 15, 126–133, doi:10.3762/bjnano.15.12

• materials in phase 2. A simulated annealing fitting algorithm was employed. The PAAO structure (Figure 1a) was confirmed using field-emission scanning electron microscopy (FE-SEM-4800, Hitachi, Tokyo, Japan). The relationship between thickness measurements using SEM and optical interferometry has been

A bifunctional superconducting cell as flux qubit and neuron

• Dmitrii S. Pashin,
• Pavel V. Pikunov,
• Marina V. Bastrakova,
• Andrey E. Schegolev,
• Nikolay V. Klenov and
• Igor I. Soloviev

Beilstein J. Nanotechnol. 2023, 14, 1116–1126, doi:10.3762/bjnano.14.92

• on the principle of quantum annealing and contains a superconducting chip with 128,472 Josephson junctions, 75 percent of which were dedicated to superconducting digital electronics for controlling the processor and reading out the result. The rest was used either for qubit junctions or for

Density functional theory study of Au-fcc/Ge and Au-hcp/Ge interfaces

• Olga Sikora,
• Małgorzata Sternik,
• Benedykt R. Jany,
• Franciszek Krok,
• Przemysław Piekarz and
• Andrzej M. Oleś

Beilstein J. Nanotechnol. 2023, 14, 1093–1105, doi:10.3762/bjnano.14.90

• , stable hcp nanoislands were obtained under controlled annealing conditions on the germanium substrate [23]. After initial crystallization of the fcc gold phase, the hcp phase grows from the eutectic Au/Ge liquid. The atomically resolved STEM-HAADF measurements as well as electron backscatter diffraction

• hcp phase of Au, formed during specific processes of annealing and cooling of gold and germanium, is characterized by the P63/mmc space group with lattice constants aAu−hcp = 2.90 Å and cAu−hcp = 4.88 Å [23]. These structural parameters are well reproduced in our DFT calculations. The obtained cubic

A visible-light photodetector based on heterojunctions between CuO nanoparticles and ZnO nanorods

• Doan Nhat Giang,
• Nhat Minh Nguyen,
• Duc Anh Ngo,
• Thanh Trang Tran,
• Le Thai Duy,
• Cong Khanh Tran,
• Thi Thanh Van Tran,
• Phan Phuong Ha La and
• Vinh Quang Dang

Beilstein J. Nanotechnol. 2023, 14, 1018–1027, doi:10.3762/bjnano.14.84

• ., temperature, concentrations of chemicals, and annealing time). ZnO nanorods and nanowires have attracted great interest in photodetectors because their chemical and physical properties are exceptional for electronics applications, and their fabrication strategies are more facile than those of other structures

• temperature. Then, 1 mL HNO3 solution was added dropwise into this mixture under vigorous magnetic stirring. After annealing at 180 °C for 18 h, the black precipitate was washed several times and centrifuged (Supporting Information File 1, Figure S2). The formation of nanoparticles was observed through the

Isolation of cubic Si₃P₄ in the form of nanocrystals

• Polina K. Nikiforova,
• Sergei S. Bubenov,
• Vadim B. Platonov,
• Andrey S. Kumskov,
• Nikolay N. Kononov,
• Tatyana A. Kuznetsova and
• Sergey G. Dorofeev

Beilstein J. Nanotechnol. 2023, 14, 971–979, doi:10.3762/bjnano.14.80

• nanoparticles with a defective zinc blende structure under mild conditions through thermal annealing of hydrogenated silicon nanoparticles with red phosphorus. The synthesized Si3P4 nanoparticles were analyzed using FTIR, XRD, electron diffraction, EDX, TEM, Raman spectroscopy, X-ray fluorescence spectrometry

• precursor for diffusion doping of wafers and as anode material for Li-ion batteries. A similar method with a hydrogenation step offers the possibility to obtain other compounds, such as silicon selenides, arsenides, and sulfides. Keywords: ampoule annealing; defective zinc blende structure; DFT

• inclusions in Si wafers implanted with P+ ions and laser-annealed at temperatures of 450–850 °C [2]. Recently, NPs of elemental compositions close to SiP and SiP2 have been observed in thermal annealing products of non-stoichiometric silicon oxide containing high amounts of phosphorus introduced during the

Control of morphology and crystallinity of CNTs in flame synthesis with one-dimensional reaction zone

• Muhammad Hilmi Ibrahim,
• Norikhwan Hamzah,
• Mohd Zamri Mohd Yusop,
• Ni Luh Wulan Septiani and
• Mohd Fairus Mohd Yasin

Beilstein J. Nanotechnol. 2023, 14, 741–750, doi:10.3762/bjnano.14.61

• large average CNT diameter with high standard deviation suggests different sizes of formed particles, possibly due to the high temperature. Generally, the size of nanoparticles is affected by several factors, including solution concentration, deposition method, quantity, and annealing [25]. At higher

• temperatures and lower HAB values, the particles can combine, sinter, and increase in size either due to Ostwald ripening or particle migration and coalescence [26]. The agglomeration occurs because of the high temperature, creating conditions similar to annealing. At higher HAB values, where the temperature

The microstrain-accompanied structural phase transition from h-MoO₃ to α-MoO₃ investigated by in situ X-ray diffraction

• Zeqian Zhang,
• Honglong Shi,
• Boxiang Zhuang,
• Minting Luo and
• Zhenfei Hu

Beilstein J. Nanotechnol. 2023, 14, 692–700, doi:10.3762/bjnano.14.55

• 1147.0 (↓ 20.5%), indicating the improvement of the crystallinity of the h-MoO3 phase through annealing. When h-MoO3 transformed into α-MoO3 (i.e., the mass fraction increased from 2.2% to 86%), the corresponding microstrain increased sharply from 1147.0 to 2246.9 (↑ 95.9%), indicating that the h-MoO3→α

Humidity-dependent electrical performance of CuO nanowire networks studied by electrochemical impedance spectroscopy

• Jelena Kosmaca,
• Juris Katkevics,
• Jana Andzane,
• Raitis Sondors,
• Liga Jasulaneca,
• Raimonds Meija,
• Kiryl Niherysh,
• Yelyzaveta Rublova and
• Donats Erts

Beilstein J. Nanotechnol. 2023, 14, 683–691, doi:10.3762/bjnano.14.54

• nanowires synthesized by thermal annealing of copper are a p-type semiconductor material [9][12][14]; its majority charge carriers are positive holes (h+) related to the presence of Cu vacancies or impurities. Under dry conditions, possible ionosorption of oxygen species from air on the nanowire surface

Molecular nanoarchitectonics: unification of nanotechnology and molecular/materials science

• Katsuhiko Ariga

Beilstein J. Nanotechnol. 2023, 14, 434–453, doi:10.3762/bjnano.14.35

• . Dehalogenation of some precursor molecules was induced upon annealing at 420/480 K, forming short chains or cyclic organometallic intermediates. In addition to isolated nanographene containing V-shaped C44 and hexagonal C66 on the platform, formation of polymer chains was confirmed after annealing. The

• )-substituted 5,15-bis(10-bromoanthracen-9-yl)-10,20-bis(trifluoromethyl)porphyrin precursors (Figure 9) [125]. The ends of the formed oligomer preserve CF3 groups after the single-component oligomerization, further enabling sequential block coupling. After annealing the initially built copper porphyrin

• . Sequential block oligomerization was actually demonstrated using cobalt porphyrin molecules and copper porphyrin oligomers upon annealing again at 210 °C. The block elongation was confirmed through the contrast difference of porphyrin centers (concave and convex), corresponding to Cu and Co porphyrin units

Plasmonic nanotechnology for photothermal applications – an evaluation

• A. R. Indhu,
• L. Keerthana and
• Gnanaprakash Dharmalingam

Beilstein J. Nanotechnol. 2023, 14, 380–419, doi:10.3762/bjnano.14.33

Formation of nanoflowers: Au and Ni silicide cores surrounded by SiO_x branches

• Feitao Li,
• Siyao Wan,
• Dong Wang and
• Peter Schaaf

Beilstein J. Nanotechnol. 2023, 14, 133–140, doi:10.3762/bjnano.14.14

• This work reports the formation of nanoflowers after annealing of Au/Ni bilayers deposited on SiO2/Si substrates. The cores of the nanoflowers consist of segregated Ni silicide and Au parts and are surrounded by SiOx branches. The SiO2 decomposition is activated at 1050 °C in a reducing atmosphere, and

• and significant to extend the previous research of Au–SiOx nanoflowers formed by an Au single layer to bilayers and explore potential fabrication parameters. In the present work, nanoflowers made of a core nanoparticle and surrounding SiOx NWs are synthesized from annealing thin Au/Ni bilayers with

• locally around the cavities in samples with smaller Au concentration, but they can be observed everywhere in the sample with the highest Au concentration. Results and Discussion Au/Ni bilayers with three thickness combinations were deposited on SiO2/Si substrates. After annealing at 1050 °C for 1 min in

Electrical and optical enhancement of ITO/Mo bilayer thin films via laser annealing

• Abdelbaki Hacini,
• Ahmad Hadi Ali,
• Nurul Nadia Adnan and
• Nafarizal Nayan

Beilstein J. Nanotechnol. 2022, 13, 1589–1595, doi:10.3762/bjnano.13.133

• structural results show that both the as-deposited and the annealed ITO/Mo thin films have a polycrystalline structure, and that the annealing treatment enhanced the crystallinity of samples. Moreover, the XRD patterns exhibited a cubic structure preferentially oriented along the (222) and (400) planes. The

• AFM analysis shows that grain size and RMS roughness increased from 16.02 to 36.19 nm and 0.4 to 2.6 nm, respectively, when the laser energy was increased to 120 mJ. The as-deposited sample has an optical transmittance of nearly 80% in the 300–800 nm range. The laser annealing yielded a higher

• transmittance of 94% and increased the bandgap energy from 2.76 to 2.88 eV at 120 mJ. The annealing treatment decreased the resistivity from 15.63 × 10−4 to 1.73 × 10−4 Ω/cm−1. Additionally, the figure of merit of the ITO/Mo structure improved significantly from 6.63 × 10−4 Ω−1 of the as-deposited sample to

Structural studies and selected physical investigations of LiCoO₂ obtained by combustion synthesis

• Monika Michalska,
• Paweł Ławniczak,
• Tomasz Strachowski,
• Adam Ostrowski and
• Waldemar Bednarski

Beilstein J. Nanotechnol. 2022, 13, 1473–1482, doi:10.3762/bjnano.13.121

• solution combustion method, and the effects of the annealing temperature (450–900 °C) on structure and composition were investigated using various methods, including XRD, SEM, EPR, and electrical studies. It was found that, as the process temperature increases, the value of the specific surface area

• investigated by using impedance spectroscopy. Comparison of the effect of annealing temperature on electrical conductivity shows a very interesting behavior. As the annealing temperature increases, the DC conductivity value increases, reaching a maximum at a temperature of 500 °C. However, further increase in

• the annealing temperature causes a steady decrease in the DC conductivity. Keywords: lithium cobalt oxide; lithium-ion battery; nanocrystalline powder; solution combustion synthesis; Introduction Lithium cobalt oxide (LiCoO2, LCO) of hexagonal structure () was first used as cathode material in

Role of titanium and organic precursors in molecular layer deposition of “titanicone” hybrid materials

• Arbresha Muriqi and
• Michael Nolan

Beilstein J. Nanotechnol. 2022, 13, 1240–1255, doi:10.3762/bjnano.13.103

• the bridging between the polymer chains in the film and this also improves the stability of the film. Nanoindentation experiments [30] showed also that GL-based titanicones have much higher elastic modulus and higher hardness compared to EG-based titanicones. Annealing experiments indicated a higher

• catalytic and photocatalytic properties [46] porous TiO2 frameworks formed by the annealing of titanicone films may serve as catalytic supports [47]. Titanicone films can also be pyrolyzed under Ar to yield conducting TiO2/carbon composite films with important electrochemical applications as electrodes for

Application of nanoarchitectonics in moist-electric generation

• Jia-Cheng Feng and
• Hong Xia

Beilstein J. Nanotechnol. 2022, 13, 1185–1200, doi:10.3762/bjnano.13.99

• from the residual soot after flame combustion of an organic liquid. After annealing and air plasma cleaning, the surface of these nanoparticles becomes hydrophilic, resulting in water molecules moving from the bottom to the top through capillary action in a natural water evaporation environment. The

• induced voltage was detected from the top and lower electrodes during movement. Annealing treatment and plasma cleaning of the carbon particle layer have significant effects on the output voltage. After the treatment, the material changes from hydrophobic to hydrophilic, the contact angle decreases from

• . A phase-engineered flexible MoS2 nanosheet generator is worth mentioning. Through annealing at 150 °C, the 1T phase of MoS2 is changed to the 2H phase. The 2H phase can dissociate more water molecules into hydrogen ions than the 1T phase (Figure 4d,e). Thus, the different phases yield a difference

Rapid fabrication of MgO@g-C₃N₄ heterojunctions for photocatalytic nitric oxide removal

• Minh-Thuan Pham,
• Duyen P. H. Tran,
• Xuan-Thanh Bui and
• Sheng-Jie You

Beilstein J. Nanotechnol. 2022, 13, 1141–1154, doi:10.3762/bjnano.13.96

• . Then, the sample was annealed at 550 °C for two hours and let to cool to room temperature. For preparation of the MgO@g-C3N4 heterojunction material, both MgO and urea were mixed, ground, and placed in a 100 mL crucible, followed by annealing at 550 °C for two hours (Figure 1). Then, the samples were