Abrupt elastic-to-plastic transition in pentagonal nanowires under bending

• Sergei Vlassov,
• Magnus Mets,
• Boris Polyakov,
• Jianjun Bian,
• Leonid Dorogin and
• Vahur Zadin

Beilstein J. Nanotechnol. 2019, 10, 2468–2476, doi:10.3762/bjnano.10.237

• at the twin boundaries leads to the brittle fracture-like onset of plastic deformation. The free surface of the NW facilitates the nucleation of defects, such as dislocations in an otherwise practically defect-free pentagonal NW structure. Additional preliminary experiments with alumina-coated Ag NWs

Multiple Fano resonances with flexible tunablity based on symmetry-breaking resonators

• Xiao bin Ren,
• Kun Ren,
• Ying Zhang,
• Cheng guo Ming and
• Qun Han

Beilstein J. Nanotechnol. 2019, 10, 2459–2467, doi:10.3762/bjnano.10.236

• stuctures are investigated at different platforms aiming for Fano resonance. Fano-type transmission phenomenona were observed in photonic crystal (PhC) waveguide–cavity systems [17][18]. The PhC waveguide is a line defect formed by removing a row of rods or air holes. The cavity is a point defect formed by

Mobility of charge carriers in self-assembled monolayers

• Zhihua Fu,
• Tatjana Ladnorg,
• Hartmut Gliemann,
• Alexander Welle,
• Asif Bashir,
• Michael Rohwerder,
• Qiang Zhang,
• Björn Schüpbach,
• Andreas Terfort and
• Christof Wöll

Beilstein J. Nanotechnol. 2019, 10, 2449–2458, doi:10.3762/bjnano.10.235

• ]. Domain boundaries, contaminations and defects have a pronounced, negative effect on charge carrier mobility. This fact calls for measurements on low-defect density samples, preferentially macroscopic single crystals, to determine the intrinsic mobilities. This approach, however, is difficult due to the

• challenge of production and procurement of highly ordered, very pure crystals of macroscopic dimensions with very low defect density, and accordingly only few measurements of such type were reported [5][6][7][8]. Here, we obtain information on intrinsic mobilities, the main figure of merit of OSC materials

• nanometers were formed. This process is expected to lead to rather small 2D domains. Also the exchange of the decanethiolate moieties by HBC may be incomplete, which would also lead to a larger defect density. We speculate that the asymptotic behavior of conductivity increase with island size results from a

pH-Controlled fluorescence switching in water-dispersed polymer brushes grafted to modified boron nitride nanotubes for cellular imaging

• Saban Kalay,
• Yurij Stetsyshyn,
• Volodymyr Donchak,
• Khrystyna Harhay,
• Ostap Lishchynskyi,
• Halyna Ohar,
• Yuriy Panchenko,
• Stanislav Voronov and
• Mustafa Çulha

Beilstein J. Nanotechnol. 2019, 10, 2428–2439, doi:10.3762/bjnano.10.233

• functionalization strategies can be classified into three groups: (1) noncovalent, (2) covalent grafting to the surface, and (3) formation of amino and/or hydroxyl groups at the ends and defect sites [11][25][26][27]. Up to now, the most prospective procedure for BNNT functionalization is covalent grafting of

Deterministic placement of ultra-bright near-infrared color centers in arrays of silicon carbide micropillars

• Stefania Castelletto,
• Abdul Salam Al Atem,
• Faraz Ahmed Inam,
• Hans Jürgen von Bardeleben,
• Sophie Hameau,
• Ahmed Fahad Almutairi,
• Gérard Guillot,
• Shin-ichiro Sato,
• Alberto Boretti and
• Jean Marie Bluet

Beilstein J. Nanotechnol. 2019, 10, 2383–2395, doi:10.3762/bjnano.10.229

• field. Unpaired electrons interact to give two or more energy states [25]. ODMR is a technique to optically pump the electron spin state of a crystal defect for spin initialization and readout [26]. There are over 200 polymorphs of SiC, and the most relevant are cubic SiC (3C) and hexagonal (4H and 6H

• 4H-SiC. The intensity of the largest PL from a single defect at saturation is 10 kcts/s [8] without a solid immersion lens using an a-Si detector with 20–30% quantum efficiency and 40 kcts/s with a solid immersion lens [4]. The DWF is 40%, the ZFS is 70 MHz for V2 and 4 MHz for V1 at the ground state

• permitted to achieve coherent coupling to single nuclear spins with ca. 1 kHz resolution [27]. The divacancy in 4H-SiC is a neutral charge state defect with spin S = 1 with 4 ZPLs PL1–PL4, in the range of 1078–1132 nm [34]. The largest PL intensity is 27 kcps [5] at low temperature using a superconducting

Polyvinylpyrrolidone as additive for perovskite solar cells with water and isopropanol as solvents

• Chen Du,
• Shuo Wang,
• Xu Miao,
• Wenhai Sun,
• Yu Zhu,
• Chengyan Wang and
• Ruixin Ma

Beilstein J. Nanotechnol. 2019, 10, 2374–2382, doi:10.3762/bjnano.10.228

• -Fermi level in the contacted perovskite and electron transfer material, but also by the defect-induced recombination in the electron transport channels [33]. It is clear that perovskite solar cells using a PVP-containing aqueous lead nitrate precursor solution will lead to an increase in Voc. The Voc of

Design and facile synthesis of defect-rich C-MoS₂/rGO nanosheets for enhanced lithium–sulfur battery performance

• Chengxiang Tian,
• Juwei Wu,
• Zheng Ma,
• Bo Li,
• Pengcheng Li,
• Xiaotao Zu and
• Xia Xiang

Beilstein J. Nanotechnol. 2019, 10, 2251–2260, doi:10.3762/bjnano.10.217

• composite with both large surface area and high porosity for the use as advanced electrode material in lithium–sulfur batteries. Double modified defect-rich MoS2 nanosheets are successfully prepared by introducing reduced graphene oxide (rGO) and amorphous carbon. The conductibility of the cathodes can be

• catalyzing the formation of sulfur species [21][22], indicating a potential application for Li–S batteries. Previous simulation results show that the binding energy of the edge active sites of defect-rich MoS2 and Li2S is much greater than the binding energy of the base plane, which is very helpful for the

• adsorption of polysulfides [23][24]. However, the low conductivity of MoS2 often results in incomplete conversion of polysulfides. Thus, MoS2 is usually combined with carbon materials and annealing treatment is also considered [25][26]. Hence, double modification of defect-rich MoS2 nanosheets with amorphous

Nitrogen-vacancy centers in diamond for nanoscale magnetic resonance imaging applications

• Alberto Boretti,
• Lorenzo Rosa,
• Jonathan Blackledge and
• Stefania Castelletto

Beilstein J. Nanotechnol. 2019, 10, 2128–2151, doi:10.3762/bjnano.10.207

• and Technology, University of Wales, Wrexham, United Kingdom Department of Computer Science, University of Western Cape, Cape Town, South Africa School of Engineering, RMIT University, Bundoora, Victoria, Australia 10.3762/bjnano.10.207 Abstract The nitrogen-vacancy (NV) center is a point defect in

• illumination [7]. The characterization of single NV centers became popular at the end of the 1990s. It was demonstrated that the fluorescence of single NV centers can be detected by room-temperature fluorescence microscopy and that the defect shows perfect photostability [8]. Room-temperature optically

• associated with NV center sensors for magnetic imaging applications. An NV center is an atomic size point defect in diamond. Standard optical techniques are capable of resolving the photoluminescence signal of a single NV center, the detection of which is facilitated particularly in the negative charge state

Ion mobility and material transport on KBr in air as a function of the relative humidity

• Dominik J. Kirpal,
• Korbinian Pürckhauer,
• Alfred J. Weymouth and
• Franz J. Giessibl

Beilstein J. Nanotechnol. 2019, 10, 2084–2093, doi:10.3762/bjnano.10.203

• removed material accumulated around the defect and to a small extent attached to the tip. Most of the material accumulates at the turnaround points of the tip. The scratching technique creates larger and more reproducible holes than the poking of single points, since the shape of the tip becomes less

• . The depth of the defects is defined by the height difference between the lowest point of the defect and the surrounding terrace. The removed material aggregates around the artificial defect. The accumulations do not attach symmetrically but irregularly around the holes. This can be explained by the

• model as described in Ref. [29]. If we were to start with a defect that has the first layer removed in a circle with radius R1 and a second (deeper) layer removed in a circle with radius r1< R1, this would yield an energy term for the edge E1 ∝ 2πR1 + 2πr1. The defect now evolves, maintaining the total

Green and scalable synthesis of nanocrystalline kuramite

• Andrea Giaccherini,
• Giuseppe Cucinotta,
• Stefano Martinuzzi,
• Enrico Berretti,
• Werner Oberhauser,
• Alessandro Lavacchi,
• Giovanni Orazio Lepore,
• Giordano Montegrossi,
• Maurizio Romanelli,
• Antonio De Luca,
• Massimo Innocenti,
• Vanni Moggi Cecchi,
• Matteo Mannini,
• Antonella Buccianti and
• Francesco Di Benedetto

Beilstein J. Nanotechnol. 2019, 10, 2073–2083, doi:10.3762/bjnano.10.202

• covellite in the final product, a relevant factor is the molar defect of Cu precursor in the EG. The crystal chemical analysis (by Raman, XRD and EXAFS) revealed a random distribution of antisite defects, SnCu and CuSn, in the tetragonal structure while still maintaining the I−42m symmetry. These chemical

Improvement of the thermoelectric properties of a MoO₃ monolayer through oxygen vacancies

• Wenwen Zheng,
• Wei Cao,
• Ziyu Wang,
• Huixiong Deng,
• Jing Shi and
• Rui Xiong

Beilstein J. Nanotechnol. 2019, 10, 2031–2038, doi:10.3762/bjnano.10.199

• supercell (72 atoms) to construct a neutral defect, such that the stoichiometric proportion is MoO2.94. Since there are three types of O atoms in the primitive cell, we named the three defective structures VO1, VO2 and VO3. Further details of the defect structures are presented in Supporting Information

• File 1. The formation energy, Ef, of a neutral defect is defined as: Ef = Etot(defect) − Etot(supercell) + ½ Etot(O2), where Etot(defect) is the total energy of the supercell containing the defect, Etot(supercell) is the total energy of the perfect supercell and Etot(O2) is the total energy of the

• oxygen molecules. Then we calculate the formation energies and band gaps of these defect structures. The absolute Ef values are 2.074 eV (VO1), 2.076 eV (VO2) and 4.108 eV (VO3) while the band gaps are 0.837 eV (VO1), 0.797 eV (VO2) and 0.831 eV (VO3). In contrast to the bulk MoO3, the three defective

The influence of porosity on nanoparticle formation in hierarchical aluminophosphates

• Matthew E. Potter,
• Lauren N. Riley,
• Alice E. Oakley,
• Panashe M. Mhembere,
• June Callison and
• Robert Raja

Beilstein J. Nanotechnol. 2019, 10, 1952–1957, doi:10.3762/bjnano.10.191

• (Figure S4 and Figure S5, Supporting Information File 1), the decrease in porosity suggests that the 1D channels are blocked, restricting access to the internal micropores. As pore mouths are known to produce high-energy defect sites [18], they are more likely to encourage nanoparticle deposition, thus

First principles modeling of pure black phosphorus devices under pressure

• Ximing Rong,
• Zhizhou Yu,
• Zewen Wu,
• Junjun Li,
• Bin Wang and
• Yin Wang

Beilstein J. Nanotechnol. 2019, 10, 1943–1951, doi:10.3762/bjnano.10.190

• to 40%, which indicates the stability of monolayer BP under zero pressure. The smooth variation of Etot means that monolayer BP can maintain its structure even at large pressure, and does not form any structural defect or bonding twist. The stress Ps can be calculated by Ps = −∂Etot/∂d·1/S with d the

Fabrication and characterization of Si_1−xGe_x nanocrystals in as-grown and annealed structures: a comparative study

• Muhammad Taha Sultan,
• Adrian Valentin Maraloiu,
• Ionel Stavarache,
• Jón Tómas Gudmundsson,
• Andrei Manolescu,
• Valentin Serban Teodorescu,
• Magdalena Lidia Ciurea and
• Halldór Gudfinnur Svavarsson

Beilstein J. Nanotechnol. 2019, 10, 1873–1882, doi:10.3762/bjnano.10.182

• the SiGe NCs); these defects do not appear because other relaxation processes take place as shown earlier. Since these shearing defects are near or in the (111) stacking planes of the SiGe structure, the NC size along the direction that is parallel to the defect plane remains large and the two others

Tuning the performance of vanadium redox flow batteries by modifying the structural defects of the carbon felt electrode

• Ditty Dixon,
• Deepu Joseph Babu,
• Aiswarya Bhaskar,
• Hans-Michael Bruns,
• Joerg J. Schneider,
• Frieder Scheiba and
• Helmut Ehrenberg

Beilstein J. Nanotechnol. 2019, 10, 1698–1706, doi:10.3762/bjnano.10.165

• the carbon felt. Moreover, the D-band of the plasma-treated sample was shifted to a higher frequency, indicating an increase in the defect density. Mostly, this increase in defects can be correlated to heteroatom substitution/doping (N-doping) and the simultaneous creation of new edge sites [17]. At

Subsurface imaging of flexible circuits via contact resonance atomic force microscopy

• Wenting Wang,
• Chengfu Ma,
• Yuhang Chen,
• Lei Zheng,
• Huarong Liu and
• Jiaru Chu

Beilstein J. Nanotechnol. 2019, 10, 1636–1647, doi:10.3762/bjnano.10.159

• calculations provide a guide to optimizing parameter settings for the nondestructive diagnosis of flexible circuits. Defect detection of the embedded circuit pattern was also carried out, which indicates the capability of imaging tiny subsurface structures smaller than 100 nm by using CR-AFM. Keywords: atomic

• force microscopy (AFM); contact resonance atomic force microscopy (CR-AFM); contact stiffness; defect detection; flexible circuits; subsurface imaging; Introduction With the rapid shrinkage of microelectronic devices, flexible circuits are intensively used while being functionalized as supercapacitors

• been carried out using CR-AFM for subsurface imaging, its application in defect diagnosis for flexible circuits has seldom been reported. Intuitively, the presence of buried metal circuit patterns in the tip-generated stress field will alter the local indentation modulus. This consequently leads to

Hierarchically structured 3D carbon nanotube electrodes for electrocatalytic applications

• Pei Wang,
• Katarzyna Kulp and
• Michael Bron

Beilstein J. Nanotechnol. 2019, 10, 1475–1487, doi:10.3762/bjnano.10.146

• carbon, respectively [64]. The intensity ratios of these bands (ID/IG) for the CNT/GC und CNT/CNT/GC electrodes are 1.36 und 1.54, respectively. This indicates that the secondary CNTs are less ordered and have a higher defect density than the primary ones. As the last step in electrode preparation, Pt

• -oxidation of COad compared to Pt-CNT/GC The reason for this improved poisoning tolerance is not known to us at the moment. However, it is known from literature that methanol as well as CO oxidation are very sensitive to Pt surface structure. It might be that a defect-rich structure of our Pt nanoparticles

• oxygen reduction reaction. Although there are differences in electrode preparation (in the present case, Pt is electrodeposited onto the carbon-based electrodes, probably leading to defect-rich particles (see also below), while in [52], Pt deposition has been deposited by CVD), we think that generally

Direct observation of oxygen-vacancy formation and structural changes in Bi₂WO₆ nanoflakes induced by electron irradiation

• Hong-long Shi,
• Bin Zou,
• Zi-an Li,
• Min-ting Luo and
• Wen-zhong Wang

Beilstein J. Nanotechnol. 2019, 10, 1434–1442, doi:10.3762/bjnano.10.141

• vacancies can significantly alter the electron structure by creating new defect levels in forbidden bands, and thus boost oxygen evolution [14]. Despite the important role of the oxygen vacancies in Bi2WO6, understanding their formation mechanism remains elusive, in part due to the lack of direct

• irradiation, in this case, is far too low to decompose Bi2WO6 nanoflakes. Besides, loops or defect clusters were not observed during the whole irradiation process suggesting that the knock-off or sputtering effects can be neglected. When a high-energy electron beam passes through the sample, an electric field

• then performed in situ electron irradiation experiments on the as-synthesized Bi2WO6 nanoflakes by using TEM techniques. We observed that 200 keV electrons are an efficient source of irradiation to induce defect states in thin Bi2WO6. Our detailed HRTEM and SAED analyses have revealed that energetic

Kelvin probe force microscopy of the nanoscale electrical surface potential barrier of metal/semiconductor interfaces in ambient atmosphere

• Petr Knotek,
• Tomáš Plecháček,
• Jan Smolík,
• Petr Kutálek,
• Filip Dvořák,
• Milan Vlček,
• Jiří Navrátil and
• Čestmír Drašar

Beilstein J. Nanotechnol. 2019, 10, 1401–1411, doi:10.3762/bjnano.10.138

• forming Au/Bi2Se3 alloy and NIs in the shape of a semispherical defect, whereas Mo reacts with the matrix and forms thermodynamically more stable layered MoSe2 in the shape of nanosheets. Experimental Single crystalline Bi2Se3 samples were grown by heating stoichiometric mixtures of the pure elements

• /compound formation. This material displayed lower density (topographical expansion, Figure 5) and the creation of the defect states (tentatively connected to the shoulder of the UPS edge, see Figure 8, black curve near 17 eV as well as a decrease in the surface contact potential of the Au NIs, see Figure 6

Nanoscale spatial mapping of mechanical properties through dynamic atomic force microscopy

• Zahra Abooalizadeh,
• Leszek Josef Sudak and
• Philip Egberts

Beilstein J. Nanotechnol. 2019, 10, 1332–1347, doi:10.3762/bjnano.10.132

• measurements showed significantly higher variation in the amplitude as the tip traversed over the surface. Despite the higher sensitivity in detecting variations in the surface displacement, the covered step did not appear in any of the on-resonance measurements under the varying normal forces. As this defect

Alloyed Pt₃M (M = Co, Ni) nanoparticles supported on S- and N-doped carbon nanotubes for the oxygen reduction reaction

• Stéphane Louisia,
• Yohann R. J. Thomas,
• Pierre Lecante,
• Marie Heitzmann,
• M. Rosa Axet,
• Pierre-André Jacques and
• Philippe Serp

Beilstein J. Nanotechnol. 2019, 10, 1251–1269, doi:10.3762/bjnano.10.125

• -range order in a sample. Finally, another parameter, measurable by Raman spectroscopy that is relevant to catalyst preparation, is the LD: LD is a typical inter-defect distance that we have measured as described in [41]. A lower ID/IG (and higher LD) is obtained for the CNT sample and a higher ID/IG

Imaging the surface potential at the steps on the rutile TiO₂(110) surface by Kelvin probe force microscopy

• Masato Miyazaki,
• Huan Fei Wen,
• Quanzhen Zhang,
• Yuuki Adachi,
• Jan Brndiar,
• Ivan Štich,
• Yan Jun Li and
• Yasuhiro Sugawara

Beilstein J. Nanotechnol. 2019, 10, 1228–1236, doi:10.3762/bjnano.10.122

• several factors can be considered: a phantom force derived from the flow of a tunneling current [48][49], the local adsorption of molecules, the localization of defect states [55][56], the induced dipole moment [50], the unintentional change in tip–sample distance [57], the electron redistribution due to

• addition, we also observed a drop in CPD on the surface without O2 exposure, indicating that the drop in CPD is not due to O2 adsorption. Third, we analyze the influence of the local pinning of the Fermi level due to defect states [55][56]. In the case of n-type semiconductors, negatively charged defect

• states derived from donor atoms may localize at the steps and increase the work function due to upward band bending. In contrast, for p-type semiconductors positively charged defect states from acceptor atoms may localize at the steps and decrease the work function due to downward band bending. However

Green fabrication of lanthanide-doped hydroxide-based phosphors: Y(OH)₃:Eu³⁺ nanoparticles for white light generation

• Tugrul Guner,
• Anilcan Kus,
• Mehmet Ozcan,
• Aziz Genc,
• Hasan Sahin and
• Mustafa M. Demir

Beilstein J. Nanotechnol. 2019, 10, 1200–1210, doi:10.3762/bjnano.10.119

• medium. Since the rate of hydroxide release is a strong parameter to control the size, size distribution and defect content of the resulting crystal, it is expected to obtain a variation for these values in the case of comparing the effect of HMTA and LiOH on the crystal growth. Moreover, such a

• surrounding the O atoms. It appears that the strongly bonded Eu atoms not only lead to deformation in the lattice structure but also to emergence of defect-like states resulting in additional peaks in the PL spectrum. White light generation by integrating red Y(OH)3:Eu3+ phosphors into a YAG-based color

Pure and mixed ordered monolayers of tetracyano-2,6-naphthoquinodimethane and hexathiapentacene on the Ag(100) surface

• Robert Harbers,
• Timo Heepenstrick,
• Dmitrii F. Perepichka and
• Moritz Sokolowski

Beilstein J. Nanotechnol. 2019, 10, 1188–1199, doi:10.3762/bjnano.10.118

• the formation of well-ordered and defect-free domains, with a structure consistent with the LEED pattern. Domains on flat terraces exhibit a lateral extension of more than 100 nm, but they do not overgrow Ag steps. The molecules appear to lie flat on the surface with a higher apparent height of the

Quantitative analysis of annealing-induced instabilities of photo-leakage current and negative-bias-illumination-stress in a-InGaZnO thin-film transistors

• Dapeng Wang and
• Mamoru Furuta

Beilstein J. Nanotechnol. 2019, 10, 1125–1130, doi:10.3762/bjnano.10.112

• bulk, whereas high-temperature annealing causes a quality degradation of the adjacent interfaces. Light of short wavelengths below 460 nm induces defect generation in the forward measurement and the leakage current increases in the reverse measurement, especially for the low-temperature-annealed device

• adjacent interfaces. The incident photon energy (>2.7 eV) excites the defect generation and the leakage current increases in the devices regardless of heating temperature. By means of the double-scan mode and a positive gate pulse, the NBIS-caused hysteresis of the TFTs annealed at different temperatures

• 7.67 × 1011 cm−2·eV−1 is obtained for the TFT treated at 300 °C. From the comprehensive analysis of the hysteresis and SS results, we concluded that the low-temperature-annealed TFT exhibits the high density of defects in the IGZO bulk, whereas the high-temperature-treated device has severe defect