Noise performance of frequency modulation Kelvin force microscopy

• Heinrich Diesinger,
• Dominique Deresmes and
• Thierry Mélin

Beilstein J. Nanotechnol. 2014, 5, 1–18, doi:10.3762/bjnano.5.1

• propagation from sensor displacement noise to the Kelvin voltage output. Giessibl et al. [9] compared qPlus and length-extension resonator (LER) sensors with respect to four noise sources: thermal excitation, sensor displacement noise, oscillator noise and thermal drift noise. The impact of all noise sources

Dynamic nanoindentation by instrumented nanoindentation and force microscopy: a comparative review

• Sidney R. Cohen and
• Estelle Kalfon-Cohen

Beilstein J. Nanotechnol. 2013, 4, 815–833, doi:10.3762/bjnano.4.93

• by a linearized sensor. However, thermal drift and piezo creep can also contribute to the apparent displacement, thus they must be minimized and/or measured and corrected for. This can present a challenge, particularly in AFM, which largely relies on piezoelectric motion transducers. It should be

• noted that a z-sensor, which is used to linearize the z-motion, cannot distinguish between creep and thermal drift. In light of this discussion, additional differences between AFM and INI can be added to those mentioned above: the time resolution of the measurement, which is related to the inertia of

• the system, and the drift/creep characteristics. These are noted in Table 1 as bandwidth and temporal stability. For a given creep time t, the corresponding displacement into the surface h(t) is measured experimentally. The creep behavior can then be modeled following [79] and [80]: with hI being the

Simulation of electron transport during electron-beam-induced deposition of nanostructures

• Francesc Salvat-Pujol,
• Harald O. Jeschke and
• Roser Valentí

Beilstein J. Nanotechnol. 2013, 4, 781–792, doi:10.3762/bjnano.4.89

• intervals of these parameters). This can be best observed in the case of the sample with thickness dWCO = 200 nm for z = 50–150 nm. In practice, sample charging effects in the EBID process cause only a minor repulsion of the electron beam (observed as a slight drift in the monitoring images), which can be

Routes to rupture and folding of graphene on rough 6H-SiC(0001) and their identification

• M. Temmen,
• O. Ochedowski,
• B. Kleine Bussmann,
• M. Schleberger,
• M. Reichling and
• T. R. J. Bollmann

Beilstein J. Nanotechnol. 2013, 4, 625–631, doi:10.3762/bjnano.4.69

• prior to measurements. All images in this paper are presented without filtering or smoothing. The topographic images are compensated for piezo creep and drift as well as for scanner bow using common plane subtraction and (facet) leveling algorithms of the Gwyddion software package [26]. Results and

Large-scale atomistic and quantum-mechanical simulations of a Nafion membrane: Morphology, proton solvation and charge transport

• Pavel V. Komarov,
• Pavel G. Khalatur and
• Alexei R. Khokhlov

Beilstein J. Nanotechnol. 2013, 4, 567–587, doi:10.3762/bjnano.4.65

• processes in a system where low energy barriers are effectively washed out by zero-point motion. Because the initial configuration for the QMD simulations of the nanochannel was taken from the classical MD trajectory, it was important to check the stability of the model channel. No strong drift of the

Digging gold: keV He⁺ ion interaction with Au

• Vasilisa Veligura,
• Gregor Hlawacek,
• Robin P. Berkelaar,
• Raoul van Gastel,
• Harold J. W. Zandvliet and
• Bene Poelsema

Beilstein J. Nanotechnol. 2013, 4, 453–460, doi:10.3762/bjnano.4.53

• extremely small [16][17]. This makes the microscope highly suited for obtaining high-resolution images of the surface topography. An image can further be recorded by simultaneous collection of the backscattered He with a microchannel plate [18]. The microscope is also equipped with a silicon drift detector

Kelvin probe force microscopy of nanocrystalline TiO₂ photoelectrodes

• Alex Henning,
• Gino Günzburger,
• Res Jöhr,
• Yossi Rosenwaks,
• Biljana Bozic-Weber,
• Catherine E. Housecroft,
• Edwin C. Constable,
• Ernst Meyer and
• Thilo Glatzel

Beilstein J. Nanotechnol. 2013, 4, 418–428, doi:10.3762/bjnano.4.49

• governed mainly by diffusion and not by drift current (electric field). Preferential trapping of electrons (holes) in defect states of the TiO2 network leads to different diffusion coefficients for electrons and holes. Surface photovoltage under sub-bandgap illumination Figure 6a shows a semilogarithmic

High-resolution nanomechanical analysis of suspended electrospun silk fibers with the torsional harmonic atomic force microscope

• Mark Cronin-Golomb and
• Ozgur Sahin

Beilstein J. Nanotechnol. 2013, 4, 243–248, doi:10.3762/bjnano.4.25

• -average detector signals in vertical and horizontal channels during a tapping-mode AFM experiment. To minimize contributions of drift in quasi-static deflection signals, we previously developed a procedure that takes advantage of the transitions between attractive and repulsive modes [36]. The calibrated

Determining cantilever stiffness from thermal noise

• Jannis Lübbe,
• Matthias Temmen,
• Philipp Rahe,
• Angelika Kühnle and
• Michael Reichling

Beilstein J. Nanotechnol. 2013, 4, 227–233, doi:10.3762/bjnano.4.23

• precision is obtained in determining the eigenfrequency. State-of-the-art test equipment provides an accuracy of absolute frequency measurements below 1 ppm. However, practically the reproducibility is limited by thermal drift of the cantilever resonance between repeated measurements. This explains, for

Influence of diffusion on space-charge-limited current measurements in organic semiconductors

• Thomas Kirchartz

Beilstein J. Nanotechnol. 2013, 4, 180–188, doi:10.3762/bjnano.4.18

• reasonably accurate mobility values. Keywords: current–voltage curves; electron-only device; drift–diffusion; mobility; simulation; traps; Introduction A frequently used method to analyze charge carrier transport in organic semiconductors is based on space-charge-limited current measurements performed on

• ][21][22][23][24][25][26]. While there have been numerous attempts to develop models to take traps in unipolar devices into account [27][28][29][30][31], nearly all of them still rely on drift as the only transport mechanism. However, traps will often lead to a situation where diffusion currents cannot

• negatively charged defects before they drift to the other contact. This barrier leads to an exponential increase of current with voltage for low voltages similar to the situation in a bipolar diode with a nonzero built-in voltage. To understand the influence of the trap-induced barrier on the interpretation

High-resolution dynamic atomic force microscopy in liquids with different feedback architectures

• John Melcher,
• David Martínez-Martín,
• Miriam Jaafar,
• Julio Gómez-Herrero and
• Arvind Raman

Beilstein J. Nanotechnol. 2013, 4, 153–163, doi:10.3762/bjnano.4.15

• can be limited by the bandwidth of the amplitude and phase measurements, or the transient response, or the response of the oscillating probe. Drift in dAFM, for example arising from the piezo actuators controlling the image raster, imposes a minimum scan speed and corresponding detection bandwidth

Nanostructure-directed chemical sensing: The IHSAB principle and the dynamics of acid/base-interface interaction

• James L. Gole and
• William Laminack

Beilstein J. Nanotechnol. 2013, 4, 20–31, doi:10.3762/bjnano.4.3

• decreasing resistance. While the response to NH3 is rapid [1][3][8][11] in this unsaturated mode, the system recovery is slowed as NH3, a sticky gas, results in a drift in baseline (see Experimental section). NO2, as a moderate acid, is found to extract electrons from a PS interface [7][29] increasing

• form of an increased resistance. In contrast, at higher fractional TiO2−xNx depositions, Figure 7 demonstrates that white light now increases the sensor response in the form of an increased conductance as the TiO2−xNx [11] decorated interface is found to extract electrons. (Note that the baseline drift

Diamond nanophotonics

• Katja Beha,
• Helmut Fedder,
• Marco Wolfer,
• Merle C. Becker,
• Petr Siyushev,
• Mohammad Jamali,
• Anton Batalov,
• Christopher Hinz,
• Jakob Hees,
• Lutz Kirste,
• Harald Obloh,
• Etienne Gheeraert,
• Boris Naydenov,
• Ingmar Jakobi,
• Florian Dolde,
• Sébastien Pezzagna,
• Daniel Twittchen,
• Matthew Markham,
• Daniel Dregely,
• Harald Giessen,
• Jan Meijer,
• Fedor Jelezko,
• Christoph E. Nebel,
• Rudolf Bratschitsch,
• Alfred Leitenstorfer and
• Jörg Wrachtrup

Beilstein J. Nanotechnol. 2012, 3, 895–908, doi:10.3762/bjnano.3.100

• high precision. The accuracy of this imaging method is limited only by the applicable laser power and ultimately by instrument drift of the sample scanning unit. The mica mask implantation and GSD imaging method are suitable to create and characterize one or more color centers in diamond with sub 100

Controlled positioning of nanoparticles on a micrometer scale

• Fabian Enderle,
• Oliver Dubbers,
• Alfred Plettl and
• Paul Ziemann

Beilstein J. Nanotechnol. 2012, 3, 773–777, doi:10.3762/bjnano.3.86

• drift, which in the present case of 100 nm disks arranged in squares added up to approximately 50 nm. Added to this error is the uncertainty of the exact position of the Au NP within any disk. Due to the finite hexagonal order, over larger areas this position can be assumed as random within the disk

Effect of spherical Au nanoparticles on nanofriction and wear reduction in dry and liquid environments

• Dave Maharaj and
• Bharat Bhushan

Beilstein J. Nanotechnol. 2012, 3, 759–772, doi:10.3762/bjnano.3.85

• , can prevent nanoparticles from reaching their intended target [7]. Smaller nanoparticles can diffuse through surfaces and avoid detection by the RES. Studies have shown that forces such as hydrodynamic and van der Waals forces along with the nanoparticle size influence lateral drift (margination) and

The memory effect of nanoscale memristors investigated by conducting scanning probe microscopy methods

• César Moreno,
• Carmen Munuera,
• Xavier Obradors and
• Carmen Ocal

Beilstein J. Nanotechnol. 2012, 3, 722–730, doi:10.3762/bjnano.3.82

• correlation of device rectification (reset) with the voltage employed to induce each particular state. Analytical simulations by using a nonlinear dopant drift within a memristor device explain the experimental I–V bipolar cycles. Keywords: conductive scanning probe micoscopy; memristor; 3-D modes; resistive

• any frequency, implies that the device is a memristor [5]. A basic mathematical definition of a memristor, assuming an ohmic electron conduction and linear ionic drift in a uniform field, is given by the following equations [2]: where M is the memristance, w is the size of the doped region, D is the

• thickness of the film, RON and ROFF correspond to the resistance of the memristor for completely uniformly doped or undoped cases, respectively, and µ is the drift velocity of the dopants under an electric field E across the doped region in the presence of a current I(t). The switching characteristic

Dimer/tetramer motifs determine amphiphilic hydrazine fibril structures on graphite

• Loji K. Thomas,
• Nadine Diek,
• Uwe Beginn and
• Michael Reichling

Beilstein J. Nanotechnol. 2012, 3, 658–666, doi:10.3762/bjnano.3.75

• locating them on a millimetre area substrate; thermal drift; movement/perturbation induced by tip motion and tip contamination [21]; the nonplanar nature of components within individual fibril units; and the presence of dangling alkyl chains. High-resolution STM imaging of 1-D structures has been

• bare HOPG substrate was imaged to ensure the quality of the STM tip and the cleanliness of the substrate surface. By imaging the atomic structure of the bare graphite, the scanner was calibrated at regular time intervals so that the precision of measurements was solely limited by thermal drift. The

• entire scan area was also imaged before molecules were deposited, to check for graphite artefacts. The ambient temperature was stabilized to be within ±1.0 °C of room temperature, and the scanner was always given time to thermally equilibrate and mechanically relax, to reduce thermal drift and piezo

Probing three-dimensional surface force fields with atomic resolution: Measurement strategies, limitations, and artifact reduction

• Mehmet Z. Baykara,
• Omur E. Dagdeviren,
• Todd C. Schwendemann,
• Harry Mönig,
• Eric I. Altman and
• Udo D. Schwarz

Beilstein J. Nanotechnol. 2012, 3, 637–650, doi:10.3762/bjnano.3.73

• function of the three spatial dimensions, with picometer and piconewton accuracy. Since the results of such measurements may be affected by piezo nonlinearities, thermal and electronic drift, tip asymmetries, and elastic deformation of the tip apex, these effects need to be considered during image

• quantitatively and qualitatively, including: thermal and electronic drift during the measurement, nonlinearities and creep associated with piezoelectric scan elements used in the microscope, variability of tip-apex structure and chemistry between different experiments, and elastic deformations of the tip under

• to obtain information on the investigated sample with as little ambiguity, uncertainty, and irreproducibility due to technique-inherent practical limitations as possible. In the case of NC-AFM, drift, piezo nonlinearities, and piezo creep result in an apparent spatial misalignment and distortion of

Nanolesions induced by heavy ions in human tissues: Experimental and theoretical studies

• Marcus Bleicher,
• Lucas Burigo,
• Marco Durante,
• Maren Herrlitz,
• Michael Krämer,
• Igor Mishustin,
• Iris Müller,
• Francesco Natale,
• Igor Pshenichnov,
• Stefan Schramm,
• Gisela Taucher-Scholz and
• Cathrin Wälzlein

Beilstein J. Nanotechnol. 2012, 3, 556–563, doi:10.3762/bjnano.3.64

• the billowing motion of the damaged domain (XRCC1, green; appears yellow due to HP1α overlap in heterochromatin) and a drift toward the chromocenter periphery. Acknowledgements This work was supported by the Beilstein-Institut, Frankfurt am Main, Germany (NanoBiC collaboration).

Imaging ultra thin layers with helium ion microscopy: Utilizing the channeling contrast mechanism

• Gregor Hlawacek,
• Vasilisa Veligura,
• Stefan Lorbek,
• Tijs F. Mocking,
• Antony George,
• Raoul van Gastel,
• Harold J. W. Zandvliet and
• Bene Poelsema

Beilstein J. Nanotechnol. 2012, 3, 507–512, doi:10.3762/bjnano.3.58

• recorded on an ultrahigh vacuum (UHV) Orion Plus helium ion microscope from Zeiss [5]. The microscope is equipped with an Everhardt–Thornley (ET) detector to record SE images, and a microchannel plate situated in the beam path below the final lens to record BSHe images. A silicon drift detector to measure

Channeling in helium ion microscopy: Mapping of crystal orientation

• Vasilisa Veligura,
• Gregor Hlawacek,
• Raoul van Gastel,
• Harold J. W. Zandvliet and
• Bene Poelsema

Beilstein J. Nanotechnol. 2012, 3, 501–506, doi:10.3762/bjnano.3.57

• the last lens, is used to record BSHe images. A silicon drift detector measures the energy of backscattered helium atoms and a Gatan MonoCL4 Elite detector measures ionoluminescence. The base pressure of 2 × 10−9 mbar allows for extended exposure of the same sample area to the He+ ion beam. The near

Graphite, graphene on SiC, and graphene nanoribbons: Calculated images with a numerical FM-AFM

• Fabien Castanié,
• Laurent Nony,
• Sébastien Gauthier and
• Xavier Bouju

Beilstein J. Nanotechnol. 2012, 3, 301–311, doi:10.3762/bjnano.3.34

• , the XY-scan is engaged and the Δf variations around Δfset are recorded. In this situation, the scan is therefore performed at nearly constant height, Hset (subject to vertical drift, which is obviously to be reduced as much as possible). Conversely, in constant-Δf mode, the DC remains engaged. Then

Dipole-driven self-organization of zwitterionic molecules on alkali halide surfaces

• Laurent Nony,
• Franck Bocquet,
• Franck Para,
• Frédéric Chérioux,
• Eric Duverger,
• Frank Palmino,
• Vincent Luzet and
• Christian Loppacher

Beilstein J. Nanotechnol. 2012, 3, 285–293, doi:10.3762/bjnano.3.32

• acquired. All images were drift corrected and evaluated in order to give the most accurate values for the experimentally determined lattice constant of MSPS cmsps,exp as well as for the Moiré pattern lMoiré,exp. Figure 3a shows the topography image of ≈1 ML of MSPS on KCl. The image was taken after the

Pulse-response measurement of frequency-resolved water dynamics on a hydrophilic surface using a Q-damped atomic force microscopy cantilever

• Masami Kageshima

Beilstein J. Nanotechnol. 2012, 3, 260–266, doi:10.3762/bjnano.3.29

• data acquisition. There is no insurance against fluctuation of the true tip–sample distance due to thermal or mechanical drift, although it was confirmed after data acquisition that the tip had not drifted into contact with the substrate. For further progress it is necessary to combine the present

Molecular-resolution imaging of pentacene on KCl(001)

• Julia L. Neff,
• Jan Götzen,
• Enhui Li,
• Michael Marz and
• Regina Hoffmann-Vogel

Beilstein J. Nanotechnol. 2012, 3, 186–191, doi:10.3762/bjnano.3.20

• temperatures. For the data shown here the sample was cooled to below 28 K and investigated under conditions of a nonconstant thermal drift smaller than 0.1 Å/s. The piezo-scanner calibration was double checked by performing high-resolution measurements on the Si(111) surface. To reduce the influence of long

• observed alignment and the expected one is consistent with thermal drift. In Figure 2c two possible molecular arrangements are displayed. For both arrangements the molecules have been associated with the dark features of the image, as is typical for inverted contrast, but an association with the bright