Double-layer symmetric gratings with bound states in the continuum for dual-band high-Q optical sensing

• Chaoying Shi,
• Jinhua Hu,
• Xiuhong Liu,
• Junfang Liang,
• Jijun Zhao,
• Haiyan Han and
• Qiaofen Zhu

Beilstein J. Nanotechnol. 2022, 13, 1408–1417, doi:10.3762/bjnano.13.116

• complementary metal oxide semiconductor (CMOS) processes [13][14]. It has been shown that the HCG system can support the optical bound states in the continuum (BICs) [15][16][17][18]. BIC plays an important role in determining the characteristics of the radiative high-Q resonance [17]. However, there are fewer

Impact of device design on the electronic and optoelectronic properties of integrated Ru-terpyridine complexes

• Max Mennicken,
• Sophia Katharina Peter,
• Corinna Kaulen,
• Ulrich Simon and
• Silvia Karthäuser

Beilstein J. Nanotechnol. 2022, 13, 219–229, doi:10.3762/bjnano.13.16

• possibilities to tune Ru(TP)2–AuNP devices are more versatile. Conclusion Overall, we demonstrated that hybrid materials from Ru(TP)2-complexes and AuNPs integrated in CMOS-compatible devices are useful switching elements that can be addressed by optical means. Furthermore, we could show that the device

Seebeck coefficient of silicon nanowire forests doped by thermal diffusion

• Shaimaa Elyamny,
• Elisabetta Dimaggio and
• Giovanni Pennelli

Beilstein J. Nanotechnol. 2020, 11, 1707–1713, doi:10.3762/bjnano.11.153

• is cheap and abundant. Also, there are established technologies for processing Si and Si is biocompatible. Furthermore, the use of silicon for thermoelectric generator devices will make them technologically compatible with standard CMOS devices. The main requirement for the use of silicon as

Atomic defect classification of the H–Si(100) surface through multi-mode scanning probe microscopy

• Jeremiah Croshaw,
• Thomas Dienel,
• Taleana Huff and
• Robert Wolkow

Beilstein J. Nanotechnol. 2020, 11, 1346–1360, doi:10.3762/bjnano.11.119

• tunnelling hydrogen microscopy; scanning tunnelling microscopy; surface metrology; Introduction Novel approaches to advance integrated circuitry beyond CMOS have focused on atom scale structures and their reliable fabrication [1]. Hydrogen-terminated silicon (H–Si) surfaces are one such versatile platform

Thermophoretic tweezers for single nanoparticle manipulation

• Jošt Stergar and
• Natan Osterman

Beilstein J. Nanotechnol. 2020, 11, 1126–1133, doi:10.3762/bjnano.11.97

• × objective (Zeiss N-Achroplan 63x/0.9W) and focused by a tube lens forming an image that is captured by a CMOS camera (BlackFly2, PointGrey Technologies). The control feedback loop is implemented on a PC running Matlab. The loop frequency is 35 Hz. In each repetition, the image is first thresholded by

Integrated photonics multi-waveguide devices for optical trapping and Raman spectroscopy: design, fabrication and performance demonstration

• Gyllion B. Loozen,
• Arnica Karuna,
• Mohammad M. R. Fanood,
• Erik Schreuder and
• Jacob Caro

Beilstein J. Nanotechnol. 2020, 11, 829–842, doi:10.3762/bjnano.11.68

• the quantitative characterization of the 2- and 16-waveguide traps, we study the confined Brownian motion of single trapped beads by recording videos, using a high-speed CMOS camera (AV Mako U029, pixel size 4.8 μm) and by tracking the bead position as a function of the time in these videos. Each

High dynamic resistance elements based on a Josephson junction array

• Konstantin Yu. Arutyunov and
• Janne S. Lehtinen

Beilstein J. Nanotechnol. 2020, 11, 417–420, doi:10.3762/bjnano.11.32

• is compared to values of ≈100 MW for conventional semiconductor complementary metal–oxide-semiconductor (CMOS) technology. In addition to heat dissipation, another issue is the speed of processing. It has been shown that the operational frequency of superconducting logic can be at least 100 times

• higher than for CMOS-based devices. It is universally accepted that the limiting factor for the speed of operation of various superconducting devices is the high-frequency impedance, e.g., originating from kinetic inductance. The effect should be taken into consideration for various cryoelectronic

DFT calculations of the structure and stability of copper clusters on MoS₂

• Cara-Lena Nies and
• Michael Nolan

Beilstein J. Nanotechnol. 2020, 11, 391–406, doi:10.3762/bjnano.11.30

• variety of research areas [1]. These include catalysis [2][3], photonics [4][5], batteries [6], sensors [7][8] and semiconductors and electronics [9][10][11]. More recently, 2D materials have been explored as copper diffusion barriers in CMOS interconnect structures [12][13][14][15]. Furthermore, to

Nanosecond resistive switching in Ag/AgI/PtIr nanojunctions

• Botond Sánta,
• Dániel Molnár,
• Patrick Haiber,
• Agnes Gubicza,
• Edit Szilágyi,
• Zsolt Zolnai,
• András Halbritter and
• Miklós Csontos

Beilstein J. Nanotechnol. 2020, 11, 92–100, doi:10.3762/bjnano.11.9

• ; nanosecond operation; resistive switching; silver iodide (AgI); Introduction The half a century long increase of the computational capacity of von Neumann architectures built on ever-shrinking complementary metal-oxide semiconductor (CMOS)-based hardware units is facing its technological, economical and

• fundamental barriers: (i) Further miniaturization of the CMOS transistors below 10 nm channel length is technologically extremely demanding and cost-inefficient. (ii) Their digital operation is not sustainable below the scale of the Fermi wavelength, which is typically ca 10 nm in layered semiconductors. (iii

Simple synthesis of nanosheets of rGO and nitrogenated rGO

• Pallellappa Chithaiah,
• Madhan Mohan Raju,
• Giridhar U. Kulkarni and
• C. N. R. Rao

Beilstein J. Nanotechnol. 2020, 11, 68–75, doi:10.3762/bjnano.11.7

• Mira3 field-emission scanning electron microscope (FESEM) equipped with an energy-dispersive X-ray spectroscopy (EDS). The TEM, HRTEM images and SAED patterns were obtained on a TALOS F200S G2, 200 kV FEG, and a CMOS camera (4k × 4k). The TEM samples were prepared by suspending the samples in ethanol

Deterministic placement of ultra-bright near-infrared color centers in arrays of silicon carbide micropillars

• Stefania Castelletto,
• Abdul Salam Al Atem,
• Faraz Ahmed Inam,
• Hans Jürgen von Bardeleben,
• Sophie Hameau,
• Ahmed Fahad Almutairi,
• Gérard Guillot,
• Shin-ichiro Sato,
• Alberto Boretti and
• Jean Marie Bluet

Beilstein J. Nanotechnol. 2019, 10, 2383–2395, doi:10.3762/bjnano.10.229

• platform for the integration of these quantum systems in large-scale complementary metal-oxide semiconductor (CMOS)-compatible wafers. Also, SiC is suitable for nanofabrication [18][19], and can be controlled through its electronic and piezoelectric properties. Further, it has great potentials for

Liquid crystal tunable claddings for polymer integrated optical waveguides

• José M. Otón,
• Manuel Caño-García,
• Fernando Gordo,
• Eva Otón,
• Morten A. Geday and
• Xabier Quintana

Beilstein J. Nanotechnol. 2019, 10, 2163–2170, doi:10.3762/bjnano.10.209

• material paves the way to the use of large wafers, well-known efficient microelectronic processes and remarkable cost savings. Silicon waveguides can be developed on silicon dioxide, resulting in silicon-on-insulator (SOI) wafer structures compatible to CMOS processes [5]. This opens the possibility of

Nitrogen-vacancy centers in diamond for nanoscale magnetic resonance imaging applications

• Alberto Boretti,
• Lorenzo Rosa,
• Jonathan Blackledge and
• Stefania Castelletto

Beilstein J. Nanotechnol. 2019, 10, 2128–2151, doi:10.3762/bjnano.10.207

Synthesis of highly active ETS-10-based titanosilicate for heterogeneously catalyzed transesterification of triglycerides

• Muhammad A. Zaheer,
• David Poppitz,
• Khavar Feyzullayeva,
• Marianne Wenzel,
• Jörg Matysik,
• Radomir Ljupkovic,
• Aleksandra Zarubica,
• Alexander A. Karavaev,
• Andreas Pöppl,
• Roger Gläser and
• Muslim Dvoyashkin

Beilstein J. Nanotechnol. 2019, 10, 2039–2061, doi:10.3762/bjnano.10.200

Preservation of rutin nanosuspensions without the use of preservatives

• Pascal L. Stahr and
• Cornelia M. Keck

Beilstein J. Nanotechnol. 2019, 10, 1902–1913, doi:10.3762/bjnano.10.185

• characterization of submicron-sized particles, can be misleading because larger sized particles are not detected [30][31][32][33], light microscopy (Olympus BX53, equipped with an Olympus SC50 CMOS color camera, Japan) and laser diffraction (LD) were used as additional techniques to securely detect possible larger

Experimental study of an evanescent-field biosensor based on 1D photonic bandgap structures

• Jad Sabek,
• Francisco Javier Díaz-Fernández,
• Luis Torrijos-Morán,
• Zeneida Díaz-Betancor,
• Ángel Maquieira,
• María-José Bañuls,
• Elena Pinilla-Cienfuegos and
• Jaime García-Rupérez

Beilstein J. Nanotechnol. 2019, 10, 967–974, doi:10.3762/bjnano.10.97

• , due to the various advantages it provides, e.g., high sensitivity, miniaturization, high multiplexing level, fast response, need for very low sample and reagent volumes and the compatibility to complementary metal-oxide semiconductor (CMOS) fabrication [3]. Chip-integrated photonic biosensors have

Integration of LaMnO_3+δ films on platinized silicon substrates for resistive switching applications by PI-MOCVD

• Raquel Rodriguez-Lamas,
• Dolors Pla,
• Odette Chaix-Pluchery,
• Benjamin Meunier,
• Fabrice Wilhelm,
• Andrei Rogalev,
• Laetitia Rapenne,
• Xavier Mescot,
• Quentin Rafhay,
• Hervé Roussel,
• Michel Boudard,
• Carmen Jiménez and
• Mónica Burriel

Beilstein J. Nanotechnol. 2019, 10, 389–398, doi:10.3762/bjnano.10.38

• , their integration in CMOS-compatible substrates, such as silicon wafers, requires further effort. Here the integration of LaMnO3+δ as memristive material in a metal–insulator–metal structure is presented using a silicon-based substrate and the pulsed injection metal organic chemical vapour deposition

A new bioinspired method for pressure and flow sensing based on the underwater air-retaining surface of the backswimmer Notonecta

• Matthias Mail,
• Adrian Klein,
• Horst Bleckmann,
• Anke Schmitz,
• Torsten Scherer,
• Peter T. Rühr,
• Goran Lovric,
• Robin Fröhlingsdorf,
• Stanislav N. Gorb and
• Wilhelm Barthlott

Beilstein J. Nanotechnol. 2018, 9, 3039–3047, doi:10.3762/bjnano.9.282

• GeV storage ring (ring current = 400 mA, top-up mode), were monochromated with a double-multilayer monochromator and tuned to an X-ray energy of 12 keV. A scientific CMOS detector (pco.Edge 5.5) was used in combination with 10× magnifying visible-light optics (UPLAPO10x) and a 20 µm thick scintillator

Site-controlled formation of single Si nanocrystals in a buried SiO₂ matrix using ion beam mixing

• Xiaomo Xu,
• Thomas Prüfer,
• Daniel Wolf,
• Hans-Jürgen Engelmann,
• Lothar Bischoff,
• René Hübner,
• Karl-Heinz Heinig,
• Wolfhard Möller,
• Stefan Facsko,
• Johannes von Borany and
• Gregor Hlawacek

Beilstein J. Nanotechnol. 2018, 9, 2883–2892, doi:10.3762/bjnano.9.267

• -oxide-semiconductor (CMOS) technology and thus have yet to be integrated into a cost-efficient Si-based technology. Multiple methods have been proposed and optimized for Si NC fabrication, including plasma-enhanced chemical vapor deposition (PECVD) [4][10], magnetron sputtering [11][12], laser-induced

• from the Si/SiO2 interfaces indicates that the so obtained single silicon NC has great potential for the CMOS-compatible integration into future SET applications. Experimental Computer simulation Simulation of ion beam mixing was performed using TRIDYN [26] and TRI3DYN [33]. Both programs allow dynamic

Charged particle single nanometre manufacturing

• Philip D. Prewett,
• Cornelis W. Hagen,
• Claudia Lenk,
• Steve Lenk,
• Marcus Kaestner,
• Tzvetan Ivanov,
• Ahmad Ahmad,
• Ivo W. Rangelow,
• Xiaoqing Shi,
• Stuart A. Boden,
• Alex P. G. Robinson,
• Dongxu Yang,
• Sangeetha Hari,
• Marijke Scotuzzi and
• Ejaz Huq

Beilstein J. Nanotechnol. 2018, 9, 2855–2882, doi:10.3762/bjnano.9.266

• which electron beam lithography developed out of the scanning electron microscope, three state-of-the-art charged-particle beam nanopatterning technologies are considered. All three have been the subject of a recently completed European Union Project entitled “Single Nanometre Manufacturing: Beyond CMOS

• pursuit of Moore’s Law [11], and as the 10 nm CMOS gate approaches, charged particle beam tools are becoming increasingly important, not just for R&D and prototyping but also for batch manufacturing. Looking “Beyond CMOS”, single-electron transistors and other quantum devices will become the basic

• building blocks for the ICs of the future and the ultrahigh resolution and flexibility of EBL and other scanning charged particle tools will, in our view, become increasingly important [12]. In order to compete with optical lithography beyond CMOS, two major properties have to be improved: the lithographic

Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO₂/Si₃N₄-coating

• Dirk König,
• Daniel Hiller,
• Noël Wilck,
• Birger Berghoff,
• Merlin Müller,
• Sangeeta Thakur,
• Giovanni Di Santo,
• Luca Petaccia,
• Joachim Mayer,
• Sean Smith and
• Joachim Knoch

Beilstein J. Nanotechnol. 2018, 9, 2255–2264, doi:10.3762/bjnano.9.210

• states (DOS) when embedded in SiO2 or Si3N4. We use further h-DFT results of a Si-nanowire (NWire) covered in SiO2 and Si3N4 to examine the device behaviour of an undoped Si-NWire FET based solely on CMOS-compatible materials (e.g., Si, SiO2, Si3N4) using the nonequilibrium Green’s function (NEGF

• performance small-scale MISFETs can be realized using undoped ultrathin Si-NWires with a combined SiO2-/Si3N4-coating. Our findings open a whole new vista on Si-based ULSI operating at lower voltages and lower heat loss. Doping-related technological obstacles typical in CMOS technology are bypassed altogether

• Si3N4 and SiO2 layers yields self-blocking n-channel FETs and thereby CMOS-compatibility. This concept is applicable to other Si nanostructures with a high surface-to-volume ratio like fin-FETs. NEGF simulation results of undoped Si-NWire-FET illustrated in Figure 7: (a) gate-wrap-around Si-NWire FET

Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates

• Noel Kennedy,
• Ray Duffy,
• Luke Eaton,
• Dan O’Connell,
• Scott Monaghan,
• Shane Garvey,
• James Connolly,
• Chris Hatem,
• Justin D. Holmes and
• Brenda Long

Beilstein J. Nanotechnol. 2018, 9, 2106–2113, doi:10.3762/bjnano.9.199

• and will be problematic when attempting to reach doping levels achieved by rival techniques. Keywords: CMOS; doping; monolayer; silicon; silicon on insulator (SOI); Introduction Aggressive device scaling in the sub-20 nm region has resulted in a number of techniques that were previously essential

• preparing devices for applications in the electronics industry such as CMOS. The short-channel effect (SCE) becomes more profound with reduced device dimensions and when combined with crystal damage leads to high leakage currents, which result in elevated power consumption. Therefore, it is essential for

Electromigrated electrical optical antennas for transducing electrons and photons at the nanoscale

• Arindam Dasgupta,
• Mickaël Buret,
• Nicolas Cazier,
• Marie-Maxime Mennemanteuil,
• Reinaldo Chacon,
• Kamal Hammani,
• Jean-Claude Weeber,
• Juan Arocas,
• Laurent Markey,
• Gérard Colas des Francs,
• Alexander Uskov,
• Igor Smetanin and
• Alexandre Bouhelier

Beilstein J. Nanotechnol. 2018, 9, 1964–1976, doi:10.3762/bjnano.9.187

• (RF) data transmission between distant nodes is emerging as an alternative for wired physical waveguiding channels [4]. This approach is enabled by the availability of complementary metal-oxide semiconductor (CMOS)-compatible transceivers [5] and may offer cost-effective robust interconnects operating

Tunable fractional Fourier transform implementation of electronic wave functions in atomically thin materials

• Daniela Dragoman

Beilstein J. Nanotechnol. 2018, 9, 1828–1833, doi:10.3762/bjnano.9.174

• computer architectures based on CMOS technology are reaching their limits of integration that emerge due to several problems, including those related to the increase in the number of interconnects and to heat dissipation [1][2]. Several alternatives, such as quantum computing [3], have been proposed and

Surface characterization of nanoparticles using near-field light scattering

• Eunsoo Yoo,
• Yizhong Liu,
• Chukwuazam A. Nwasike,
• Sebastian R. Freeman,
• Brian C. DiPaolo,
• Bernardo Cordovez and
• Amber L. Doiron

Beilstein J. Nanotechnol. 2018, 9, 1228–1238, doi:10.3762/bjnano.9.114

• nanoparticles in solution on the waveguide surface. A microscope with a high frame rate CMOS camera (1,500 fps, Basler acA2000-165 µm) was used to measure the intense scattered light (local intensity) from trapped metallic nanoparticles. A 1064 nm laser (NanoTweezerTM instrument, Optofluidics, maximum 350 mW