Heat-induced morphological changes in silver nanowires deposited on a patterned silicon substrate

• Elyad Damerchi,
• Sven Oras,
• Edgars Butanovs,
• Allar Liivlaid,
• Mikk Antsov,
• Boris Polyakov,
• Annamarija Trausa,
• Veronika Zadin,
• Andreas Kyritsakis,
• Loïc Vidal,
• Karine Mougin,
• Siim Pikker and
• Sergei Vlassov

Beilstein J. Nanotechnol. 2024, 15, 435–446, doi:10.3762/bjnano.15.39

• indium tin oxide (ITO), which currently serves as the industry standard for transparent conductive films, the Ag NW network is significantly more mechanically flexible and offers a broader optical transmittance range that extends well beyond the visible region [13][14]. Another related application of Ag

On the mechanism of piezoresistance in nanocrystalline graphite

• Sandeep Kumar,
• Simone Dehm and
• Ralph Krupke

Beilstein J. Nanotechnol. 2024, 15, 376–384, doi:10.3762/bjnano.15.34

• electronics. This is because the relative change in resistance of graphene for similar values of applied strain (4%) is just 50%, which is two orders of magnitude lower than that of the flat-screen material indium titanium oxide (ITO). Indeed, from a theoretical point of view, change in resistance due to

CdSe/ZnS quantum dots as a booster in the active layer of distributed ternary organic photovoltaics

• Gabriela Lewińska,
• Piotr Jeleń,
• Zofia Kucia,
• Maciej Sitarz,
• Łukasz Walczak,
• Bartłomiej Szafraniak,
• Jerzy Sanetra and
• Konstanty W. Marszalek

Beilstein J. Nanotechnol. 2024, 15, 144–156, doi:10.3762/bjnano.15.14

• diagram of a potential solar cell with aluminum and indium tin oxide (ITO) electrodes is presented in Figure 10. The HOMO was determined using the UPS spectrum of the valence bands for all samples. The lowest unoccupied molecular orbital (LUMO) was determined by subtracting the energy gap from the HOMO

• level. The energy gap was obtained from the Tauc diagram [57]. The levels correspond to a mixture of the levels obtained for pure CdSe and ZnS [58]. To evaluate the potential applicability of ternary mixtures, the volume heterojunctions of ITO/PEDOT:PSS/active layer/aluminum and ITO/active layer

• of QD-doped devices was compared to the reference system (ITO/PEDOT:PSS/P3HT:PCBM/aluminium). PEDOT:PSS ([poly(3.4-ethylene dioxythiophene] polystyrene sulfonate) is an intrinsically conductive polymer, a mixture of two ionomers, with a HOMO level equal to 5.17 eV [61]. It is widely used as a charge

Plasmonic nanotechnology for photothermal applications – an evaluation

• A. R. Indhu,
• L. Keerthana and
• Gnanaprakash Dharmalingam

Beilstein J. Nanotechnol. 2023, 14, 380–419, doi:10.3762/bjnano.14.33

Electrical and optical enhancement of ITO/Mo bilayer thin films via laser annealing

• Abdelbaki Hacini,
• Ahmad Hadi Ali,
• Nurul Nadia Adnan and
• Nafarizal Nayan

Beilstein J. Nanotechnol. 2022, 13, 1589–1595, doi:10.3762/bjnano.13.133

• Microelectronic and Nanotechnology Shamsuddin Research Centre (MiNT-SRC), Universiti Tun Hussein Onn Malaysia, 86400 Parit Raja, Batu Pahat, Johor, Malaysia 10.3762/bjnano.13.133 Abstract ITO/Mo bilayer thin films were sputtered on n-type silicon and glass substrates and annealed with a Nd:YAG pulsed laser. The

• structural results show that both the as-deposited and the annealed ITO/Mo thin films have a polycrystalline structure, and that the annealing treatment enhanced the crystallinity of samples. Moreover, the XRD patterns exhibited a cubic structure preferentially oriented along the (222) and (400) planes. The

• transmittance of 94% and increased the bandgap energy from 2.76 to 2.88 eV at 120 mJ. The annealing treatment decreased the resistivity from 15.63 × 10−4 to 1.73 × 10−4 Ω/cm−1. Additionally, the figure of merit of the ITO/Mo structure improved significantly from 6.63 × 10−4 Ω−1 of the as-deposited sample to

LED-light-activated photocatalytic performance of metal-free carbon-modified hexagonal boron nitride towards degradation of methylene blue and phenol

• Nirmalendu S. Mishra and
• Pichiah Saravanan

Beilstein J. Nanotechnol. 2022, 13, 1380–1392, doi:10.3762/bjnano.13.114

• , respectively. The setup consists of a 0.5 M Na2SO4 electrolyte/hole-scavenger solution along with LED lamps as a visible light source. The working electrode was fabricated through an ITO-PTFE electrode (dimensions: 1 cm × 1 cm) drop casted with a slurry of the studied materials, isopropanol and Nafion solution

Optimizing PMMA solutions to suppress contamination in the transfer of CVD graphene for batch production

• Chun-Da Liao,
• Andrea Capasso,
• Tiago Queirós,
• Telma Domingues,
• Fatima Cerqueira,
• Nicoleta Nicoara,
• Jérôme Borme,
• Paulo Freitas and
• Pedro Alpuim

Beilstein J. Nanotechnol. 2022, 13, 796–806, doi:10.3762/bjnano.13.70

• ± 3.0 cm−1 (Figure 2f,i), implying high-quality monolayer graphene. Together, the data further support uniformity and crystallinity of the sample. The G phonon band arises from double degeneracy of iTO and iLO phonon modes (E2g symmetry) at the Brillouin zone center, which is an in-plane vibration of

Hierarchical Bi₂WO₆/TiO₂-nanotube composites derived from natural cellulose for visible-light photocatalytic treatment of pollutants

• Zehao Lin,
• Zhan Yang and
• Jianguo Huang

Beilstein J. Nanotechnol. 2022, 13, 745–762, doi:10.3762/bjnano.13.66

• ultrasonically dispersed in ethanol (1.0 mL) with the addition of a PVDF solution (100.0 μL, 10.0 mg·mL−1, using N-methylpyrrolidone as the solvent), which was then spin-coated on a conducting indium tin oxide (ITO) glass, followed by the calcination process at 100 °C for 24 h, giving the relevant working

Fabrication and testing of polymer microneedles for transdermal drug delivery

• Vahid Ebrahiminejad,
• Zahra Faraji Rad,
• Philip D. Prewett and
• Graham J. Davies

Beilstein J. Nanotechnol. 2022, 13, 629–640, doi:10.3762/bjnano.13.55

• photoresist was drop cast onto an indium tin oxide (ITO) glass substrate prior to starting the printing process. A dip-in laser lithography (DiLL) objective (25× magnification, NA = 0.8) was used for printing, after which the MN array was washed in propylene glycol methyl ether acetate (PGMEA) for 10 minutes

Electrostatic pull-in application in flexible devices: A review

• Teng Cai,
• Yuming Fang,
• Yingli Fang,
• Ruozhou Li,
• Ying Yu and
• Mingyang Huang

Beilstein J. Nanotechnol. 2022, 13, 390–403, doi:10.3762/bjnano.13.32

• electrode gap of 6 μm. Kosmaca et al. [39] studied the electrostatic pull-in of Bi2Se3 NW electrodes and determined that the pull-in voltage was 3 V. This technique provides a new method for the connection between the intermediate layer of ITO and the electrode. In [10], they also used the in situ technique

Selected properties of Al_xZn_yO thin films prepared by reactive pulsed magnetron sputtering using a two-element Zn/Al target

• Witold Posadowski,
• Artur Wiatrowski,
• Jarosław Domaradzki and
• Michał Mazur

Beilstein J. Nanotechnol. 2022, 13, 344–354, doi:10.3762/bjnano.13.29

• : aluminium zinc oxide; magnetron sputtering; thin film; transparent conducting oxide; transparent electronics; Introduction Aluminium-doped zinc oxide (AZO) is a potential alternative to indium tin oxide (ITO) for transparent conducting oxide (TCO) electrodes in transparent electronic and photovoltaic

Investigation of a memory effect in a Au/(Ti–Cu)Ox-gradient thin film/TiAlV structure

• Damian Wojcieszak,
• Jarosław Domaradzki,
• Michał Mazur,
• Tomasz Kotwica and
• Danuta Kaczmarek

Beilstein J. Nanotechnol. 2022, 13, 265–273, doi:10.3762/bjnano.13.21

• ]. The most commonly used material in resistive switching devices is TiO2−x [33][34][35][36][37][38]. In addition to the oxide layers, the material used for metal electrodes plays another crucial role in the resistive switching mechanism. Usually, materials such as Au, Ag, Ni, Ti, W, TiN, or ITO are used

Enhancement of the piezoelectric coefficient in PVDF-TrFe/CoFe₂O₄ nanocomposites through DC magnetic poling

• Marco Fortunato,
• Alessio Tamburrano,
• Maria Paola Bracciale,
• Maria Laura Santarelli and
• Maria Sabrina Sarto

Beilstein J. Nanotechnol. 2021, 12, 1262–1270, doi:10.3762/bjnano.12.93

• for 30 min and then spin coated (30 s with a spin speed of 2000 rpm) onto polyethylene terephthalate/indium tin oxide (PET/ITO, Sigma-Aldrich, Rs = 60 Ω/sq). The obtained melt was cured in the oven at 120 °C for 2 h. After curing, the nanostructured thin film was placed over a heated mat reaching 65

Assessment of the optical and electrical properties of light-emitting diodes containing carbon-based nanostructures and plasmonic nanoparticles: a review

• Keshav Nagpal,
• Erwan Rauwel,
• Frédérique Ducroquet and
• Protima Rauwel

Beilstein J. Nanotechnol. 2021, 12, 1078–1092, doi:10.3762/bjnano.12.80

• a large scale. For this purpose, transparent conducting oxides (TCO), such as thin films of In2O3, SnO2, ZnO, and their mixtures have been extensively studied [30][31][32][33][34]. The most widely studied TCO is indium tin oxide (ITO), which possesses good physical properties, such as high optical

• transmittance (>80% in the visible region) and low sheet resistance (≈20 Ω/sq). Typically, ITO consists of 90% In2O3 and 10% SnO2 by weight. Kim et al. have grown ITO on glass substrates with varying Sn concentrations [35]. Although ITO is a conventional favorite current-spreading layer, it nevertheless suffers

• from certain limitations, including high processing temperatures, cracking upon bending, and poor transparency in the blue and UV regions. In addition, ITO is expensive owing to the fact that it is deposited by high-vacuum thin-film deposition methods and the price of indium has escalated by almost 900

9.1% efficient zinc oxide/silicon solar cells on a 50 μm thick Si absorber

• Rafal Pietruszka,
• Bartlomiej S. Witkowski,
• Monika Ozga,
• Katarzyna Gwozdz,
• Ewa Placzek-Popko and
• Marek Godlewski

Beilstein J. Nanotechnol. 2021, 12, 766–774, doi:10.3762/bjnano.12.60

• inexpensive alternatives for indium tin oxide (ITO) [9]. In this work, we used ALD to deposit zinc oxide nanoseeds, magnesium-doped zinc oxide (MZO) layers and aluminium-doped zinc oxide films. We thus continue our interest on photovoltaic structures based on thin films of ZnO. Recently, there have been

High-yield synthesis of silver nanowires for transparent conducting PET films

• Gul Naz,
• Hafsa Asghar,
• Muhammad Ramzan,
• Muhammad Arshad,
• Rashid Ahmed,
• Muhammad Bilal Tahir,
• Bakhtiar Ul Haq,
• Nadeem Baig and
• Junaid Jalil

Beilstein J. Nanotechnol. 2021, 12, 624–632, doi:10.3762/bjnano.12.51

• flexibility after the ink coating. The maximum transmittance value of as-prepared PET films in the visible region was estimated to be about 92.5% with a sheet resistance value of ca. 20 Ω/sq. This makes the films a potential substitute to commonly used expensive indium tin oxide (ITO) in the field of flexible

• electrodes made of sputtered indium tin oxide (ITO) films [1][2][3]. These films are widely used because of their high transmittance, low sheet resistance, and high electrical conductivity. Yet, they still have some major drawbacks such as high cost, intrinsic brittleness due to the ceramic nature [4], and

• , carbon nanotubes (CNT), conductive polymers, and metallic nanowires, have been tested commercially as alternative to ITO films for flexible optoelectronic devices [6][7][8][9]. Amongst them, graphene and carbon materials, particularly CNTs, display low optical transparency and high sheet resistance owing

Properties of graphene deposited on GaN nanowires: influence of nanowire roughness, self-induced nanogating and defects

• Jakub Kierdaszuk,
• Piotr Kaźmierczak,
• Justyna Grzonka,
• Aleksandra Krajewska,
• Aleksandra Przewłoka,
• Wawrzyniec Kaszub,
• Zbigniew R. Zytkiewicz,
• Marta Sobanska,
• Maria Kamińska,
• Andrzej Wysmołek and
• Aneta Drabińska

Beilstein J. Nanotechnol. 2021, 12, 566–577, doi:10.3762/bjnano.12.47

• and hydrogen dopants in the pyridinic position result in n-type doping [48]. Thus, defect origin and density impact graphene strain and carrier concentration as well as the interaction with the substrate. The G band is generated by the scattering on iTO or iLO phonons near the Γ point of the Brillouin

• zone. For the presence of D band, the resonant scattering on the iTO phonon near the K point of the Brillouin zone and the defect are necessary. Consequently, the intensity of the G band is proportional to the laser spot area while the intensity of the D band depends on the number of defects in the

Structural and optical characteristics determined by the sputtering deposition conditions of oxide thin films

• Petronela Prepelita,
• Florin Garoi and
• Valentin Craciun

Beilstein J. Nanotechnol. 2021, 12, 354–365, doi:10.3762/bjnano.12.29

• high dielectric constant and low conductivity. Metamaterial structures with similar repetitive geometric structures, such as Si/SiO2/ITO/Au [62], were obtained worldwide. In the case of our research, the new suggested metamaterial structure will consist of dielectric (SiO2)/inductive elements

A review on the green and sustainable synthesis of silver nanoparticles and one-dimensional silver nanostructures

• Sina Kaabipour and
• Shohreh Hemmati

Beilstein J. Nanotechnol. 2021, 12, 102–136, doi:10.3762/bjnano.12.9

• rheological additives [103]. AgNW-coated conductive films have been considered as a promising alternative over conventional indium tin oxide (ITO)-coated conductive films [89]. The synthesis of silver nanostructures, and generally all types of nanostructures, can be categorized as one of two approaches [104

Fusion of purple membranes triggered by immobilization on carbon nanomembranes

• René Riedel,
• Natalie Frese,
• Fang Yang,
• Martin Wortmann,
• Raphael Dalpke,
• Daniel Rhinow,
• Norbert Hampp and
• Armin Gölzhäuser

Beilstein J. Nanotechnol. 2021, 12, 93–101, doi:10.3762/bjnano.12.8

• consisting of the CNM substrate as the upper and an indium tin oxide (ITO) as the lower capacitor plate. A sample drop was placed between the two electrodes. For electrostatic experiments (drop was in contact with substrate plate only) the plate separation distance was held constant at 10 mm, while it was

• . An electric field between the substrate and an ITO electrode has been used for the controlled deposition of genetically modified c-His PM from a suspension. The best results were achieved after the incubation of 40 µL c-His PM suspension of OD 0.02 at 5 V for 3 min and a DPR time of 5 min at a

Piezotronic effect in AlGaN/AlN/GaN heterojunction nanowires used as a flexible strain sensor

• Jianqi Dong,
• Liang Chen,
• Yuqing Yang and
• Xingfu Wang

Beilstein J. Nanotechnol. 2020, 11, 1847–1853, doi:10.3762/bjnano.11.166

• (EC) wet etching, to prepare AlGaN/AlN/GaN heterojunction NWs with a controllable size. After the lift-off, a single NW is transferred to a flexible poly(ethylene terephthalate) (PET) substrate and is fixed by indium tin oxide (ITO) electrodes to form an ohmic contact for the strain sensor. Under

• ITO transparent electrodes were patterned and deposited onto the two ends of the AlGaN/AlN/GaN heterojunction NWs to eliminate the impact of the Schottky barrier. In addition, they fixed the NW to the flexible PET substrate. A schematic of the equipment (electric one-dimensional translation stage) for

• top-down two-step process, including ICP dry etching and selective EC wet etching. After the lift-off, a single NW was transferred to a flexible PET substrate and was fixed by ITO electrodes to form an ohmic contact for the strain sensor. We have introduced the piezotronic effect to adjust the carrier

A self-powered, flexible ultra-thin Si/ZnO nanowire photodetector as full-spectrum optical sensor and pyroelectric nanogenerator

• Liang Chen,
• Jianqi Dong,
• Miao He and
• Xingfu Wang

Beilstein J. Nanotechnol. 2020, 11, 1623–1630, doi:10.3762/bjnano.11.145

• . Finally, by RF magnetron sputtering, a 200 nm thick layers of ITO and Cu were deposited on ZnO NWs and p-Si, respectively. Electrical measurements: the measurement setup includes a source meter, an optical platform, a chopper, sample, and a light source. Sample, chopper and light source must be in the

Structural optical and electrical properties of a transparent conductive ITO/Al–Ag/ITO multilayer contact

• Aliyu Kabiru Isiyaku,
• Ahmad Hadi Ali and
• Nafarizal Nayan

Beilstein J. Nanotechnol. 2020, 11, 695–702, doi:10.3762/bjnano.11.57

• Science, Kaduna State University, P.M.B 2339, Kaduna State, Nigeria Microelectronic and Nanotechnology Shamsuddin Research Centre (MiNT-SRC), Universiti Tun Hussein Onn Malaysia, 86400 Parit Raja, Batu Pahat, Johor, Malaysia 10.3762/bjnano.11.57 Abstract Indium tin oxide (ITO) is a widely used material

• for transparent conductive oxide (TCO) films due to its good optical and electrical properties. Improving the optoelectronic properties of ITO films with reduced thickness is crucial and quite challenging. ITO-based multilayer films with an aluminium–silver (Al–Ag) interlayer (ITO/Al–Ag/ITO) and a

• pure ITO layer (as reference) were prepared by RF and DC sputtering. The microstructural, optical and electrical properties of the ITO/Al–Ag/ITO (IAAI) films were investigated before and after annealing at 400 °C. X-ray diffraction measurements show that the insertion of the Al–Ag intermediate bilayer

Synthesis and enhanced photocatalytic performance of 0D/2D CuO/tourmaline composite photocatalysts

• Changqiang Yu,
• Min Wen,
• Zhen Tong,
• Shuhua Li,
• Yanhong Yin,
• Xianbin Liu,
• Yesheng Li,
• Tongxiang Liang,
• Ziping Wu and
• Dionysios D. Dionysiou

Beilstein J. Nanotechnol. 2020, 11, 407–416, doi:10.3762/bjnano.11.31

• of the samples were mixed with 2 mL of ethanol followed by 10 min of sonication. Then, 50 µL of 5% Nafion were added, and the obtained mixture was magnetically stirred for 24 h. Finally, the mixture was coated on ITO glass and dried in a vacuum oven for 12 h. Electron paramagnetic resonance (EPR

Implementation of data-cube pump–probe KPFM on organic solar cells

• Benjamin Grévin,
• Olivier Bardagot and
• Renaud Demadrille

Beilstein J. Nanotechnol. 2020, 11, 323–337, doi:10.3762/bjnano.11.24

• same features as the raw data however at a slightly lower noise level. Organic BHJ thin films processing, solar cell fabrication and characterization The PTB7:PC71BM BHJ thin film was deposited on an indium thin oxide (ITO) substrate coated with PEDOT:PSS (a hole-conducting polymer) following the

• procedure published by Liang et al. [28]. PTB7 (Ossila, Mw = 85 kDa, PDI = 2.0) and PC71BM (Solenne BV, 99% purity) were used as received. A thin layer of filtered (0.45 µm) PEDOT:PSS (Baytron A14083, Clevios) was spin-coated onto the activated ITO surface at 5000 rpm for 25 s, 4000 rpm for 60 s and 4000