Investigation of electron-induced cross-linking of self-assembled monolayers by scanning tunneling microscopy

• Patrick Stohmann,
• Sascha Koch,
• Yang Yang,
• Christopher David Kaiser,
• Julian Ehrens,
• Jürgen Schnack,
• Niklas Biere,
• Dario Anselmetti,
• Armin Gölzhäuser and
• Xianghui Zhang

Beilstein J. Nanotechnol. 2022, 13, 462–471, doi:10.3762/bjnano.13.39

• the reference [34], we used a 300 nm thermally evaporated Au(111) layer on mica substrates (Georg Albert PVD-Coatings, Germany). These substrates provide, without further flame-annealing treatment, atomically flat terraces in the range of 100 nm (terraces of 100–200 nm were typically observed). The

• Au(111) surface was prepared by argon sputtering for 10 min at 1 keV with a pressure of 3 × 10−6 mbar. Secondly, the treated substrate was annealed at 673 K for 1 h in order to obtain a flat substrate surface characterized by large gold terraces. When required, successive sputtering/annealing cycles

A non-enzymatic electrochemical hydrogen peroxide sensor based on copper oxide nanostructures

• Irena Mihailova,
• Vjaceslavs Gerbreders,
• Marina Krasovska,
• Eriks Sledevskis,
• Valdis Mizers,
• Andrejs Bulanovs and
• Andrejs Ogurcovs

Beilstein J. Nanotechnol. 2022, 13, 424–436, doi:10.3762/bjnano.13.35

• obtained in the laboratory. CuO layer synthesis on copper wires A smooth film coating of copper oxide was obtained by annealing the copper wire in an oxygen atmosphere. Before annealing, the copper wire was washed several times with water and ethanol to clean the surface of possible contamination. The wire

• electrode surface is electrooxidized back to Cu2+, and the catalytic cycle is repeated [55][81][82]. Figure 3b shows CV curves for a pure Cu wire and CuO film obtained by copper annealing compared to a nanostructured CuO film obtained by chemical hydrothermal oxidation. All measurements were carried out in

Selected properties of Al_xZn_yO thin films prepared by reactive pulsed magnetron sputtering using a two-element Zn/Al target

• Witold Posadowski,
• Artur Wiatrowski,
• Jarosław Domaradzki and
• Michał Mazur

Beilstein J. Nanotechnol. 2022, 13, 344–354, doi:10.3762/bjnano.13.29

• heated to 500 °C. The lowest measured resistivity of the investigated thin films was in the range from 1 × 10−4 to 1 × 10−3 Ω·cm. Furthermore, the prepared films were characterized by a light transmittance greater than 80%. Post-process annealing was also found to result in reduced resistivity and

A broadband detector based on series YBCO grain boundary Josephson junctions

• Egor I. Glushkov,
• Alexander V. Chiginev,
• Leonid S. Kuzmin and
• Leonid S. Revin

Beilstein J. Nanotechnol. 2022, 13, 325–333, doi:10.3762/bjnano.13.27

• detection at frequencies higher than 100 Hz, where the noise falls [45], and second, to reduce the noise by annealing the YBCO bicrystal junction in atomic oxygen [39]. (a–c) Three log-periodic antennas of various geometries; (d) system with a lens (d) and (e) beam pattern at 250 GHz. Normalized level of

Engineered titania nanomaterials in advanced clinical applications

• Padmavati Sahare,
• Paulina Govea Alvarez,
• Juan Manual Sanchez Yanez,
• Gabriel Luna-Bárcenas,
• Samik Chakraborty,
• Sujay Paul and
• Miriam Estevez

Beilstein J. Nanotechnol. 2022, 13, 201–218, doi:10.3762/bjnano.13.15

• hydroxy groups can react with water molecules. The thus formed hydrogen bonds account for a good wettability. An annealing temperature below 450 °C still retains the hydrophilic behavior because of the combined crystalline phase (anatase and rutile), but above that temperature, the reduction of the number

Sputtering onto liquids: a critical review

• Anastasiya Sergievskaya,
• Adrien Chauvin and
• Stephanos Konstantinidis

Beilstein J. Nanotechnol. 2022, 13, 10–53, doi:10.3762/bjnano.13.2

• from the plasma to the film during growth through heating of the substrate and/or via bombardment by energetic particles or post-deposition annealing of the film can be envisaged. More information on thin film deposition (onto solid substrates) by sputtering-based processes can be found in books such

Topographic signatures and manipulations of Fe atoms, CO molecules and NaCl islands on superconducting Pb(111)

• Carl Drechsel,
• Philipp D’Astolfo,
• Jung-Ching Liu,
• Thilo Glatzel,
• Rémy Pawlak and
• Ernst Meyer

Beilstein J. Nanotechnol. 2022, 13, 1–9, doi:10.3762/bjnano.13.1

• Sample preparation The Pb(111) single crystal, purchased from Mateck GmbH, was cleaned by several sputtering and annealing cycles in ultra-high vacuum (UHV). CO dosing on the cold substrate was done in the microscope chamber by increasing the pressure via a leak valve up to p ≈ 1 × 10−7 mbar for one

• ) and Pb(110) Figure 1 shows STM images of CO molecules adsorbed on Pb(111). With a lattice parameter of aPb = 4.95 Å, the height of monoatomic steps of the Pb(111) surface is expected to be hPb = = 2.85 Å. Experimentally, a pristine Pb(111) sample (Figure 1a) shows, after sputtering and annealing

• apparent (see Figure 2a). Growth of NaCl islands on Pb(111) We next investigated the adsorption of NaCl on Pb(111) (Figure 3). Upon sublimation from a quartz crucible on a Pb(111) surface, which is kept at room temperature, NaCl forms, without any post-annealing, rectangular islands with round corners

Chemical vapor deposition of germanium-rich CrGe_x nanowires

• Vladislav Dřínek,
• Stanislav Tiagulskyi,
• Roman Yatskiv,
• Jan Grym,
• Radek Fajgar,
• Věra Jandová,
• Martin Koštejn and
• Jaroslav Kupčík

Beilstein J. Nanotechnol. 2021, 12, 1365–1371, doi:10.3762/bjnano.12.100

• structure of the prepared nanowires, unlike simple structures, enables further more extensive engineering of nanowire properties by specific technological steps (e.g., thermal annealing, etching, doping, and filling) in order to obtain, for example, catalytic nanowires with huge specific surface or hollow

Plasmon-enhanced photoluminescence from TiO₂ and TeO₂ thin films doped by Eu³⁺ for optoelectronic applications

• Marcin Łapiński,
• Jakub Czubek,
• Katarzyna Drozdowska,
• Anna Synak,
• Wojciech Sadowski and
• Barbara Kościelska

Beilstein J. Nanotechnol. 2021, 12, 1271–1278, doi:10.3762/bjnano.12.94

• thermal annealing of the gold thin film. Thermal dewetting of gold film results in spherical gold nanostructures with average dimensions of 50 nm. Both, luminescent TiO2:Eu and TeO2:Eu films were deposited by RF magnetron sputtering from mosaic targets. The morphology of the gold nanostructures was

• thin films can be implemented in many ways. The change of deposition parameters and working gasses, doping with various elements, or annealing at an elevated temperature are the most commonly used procedures [17][18]. It gives enormous possibilities for manufacturing thin films with novel properties

Irradiation-driven molecular dynamics simulation of the FEBID process for Pt(PF₃)₄

• Alexey Prosvetov,
• Alexey V. Verkhovtsev,
• Gennady Sushko and
• Andrey V. Solov’yov

Beilstein J. Nanotechnol. 2021, 12, 1151–1172, doi:10.3762/bjnano.12.86

• and thermalization simulations for each new layer are performed in the same way as for the initial precursor layer. Step 5. Post-deposition processing Additional processing of the FEBID-grown structures, namely post-deposition electron irradiation or high-temperature annealing with or without

• removed, and remaining metal deposits are reorganized into more compact and dense structures. Both types of post-deposition processing, that is, annealing and further electron irradiation, can be simulated by means of MD as the last step of the computational protocol shown in Figure 1. MD simulation of

• the annealing includes heating of the deposited structures to high temperature and subsequent slow cooling. During annealing structural and topological changes in the deposit take place. The typical time scale for annealing in experiments varies from minutes to several hours [55][56][57]. Therefore

A Au/CuNiCoS₄/p-Si photodiode: electrical and morphological characterization

• Adem Koçyiğit,
• Adem Sarılmaz,
• Teoman Öztürk,
• Faruk Ozel and
• Murat Yıldırım

Beilstein J. Nanotechnol. 2021, 12, 984–994, doi:10.3762/bjnano.12.74

• thermal annealing at 400 °C for 2 min in N2 atmosphere. Top contacts were prepared on the film by evaporating gold with a thickness of 150 nm at 5 × 10−6 Torr through a metal shadow mask (Au, 99.99% from Kurt J. Lesker). High-purity Al and Au metal contacts were thermally evaporated from a tungsten filament

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

• Frances I. Allen

Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52

• nitrogen, the focused helium ion beam was used to create lattice vacancies at predefined locations (in a similar manner to the related electron beam-based methods). After annealing to allow for diffusion of the vacancies, the presence of nitrogen-vacancy centers was confirmed by photoluminescence

• ]. Here, neon line irradiation of an Si(25 nm)/SiO2(6.5 nm)/Si(bulk) stack was used to induce collisional mixing of silicon atoms into the buried SiO2 layer. Upon subsequent thermal annealing, 1D chains of silicon nanocrystals of 2.2 nm diameter self-assembled in the center of the SiO2 layer. A TEM-based

Local stiffness and work function variations of hexagonal boron nitride on Cu(111)

• Abhishek Grewal,
• Yuqi Wang,
• Matthias Münks,
• Klaus Kern and
• Markus Ternes

Beilstein J. Nanotechnol. 2021, 12, 559–565, doi:10.3762/bjnano.12.46

• acquisition. Sample preparation: A Cu(111) single crystal (MaTeck GmbH) is cleaned via repeated cycles of Ar-ion sputtering at room temperature followed by annealing to 1020 K in an ultrahigh-vacuum preparation chamber. A partial layer of h-BN is grown by chemical vapour deposition by heating the Cu(111

Influence of electrospray deposition on C₆₀ molecular assemblies

• Antoine Hinaut,
• Sebastian Scherb,
• Sara Freund,
• Zhao Liu,
• Thilo Glatzel and
• Ernst Meyer

Beilstein J. Nanotechnol. 2021, 12, 552–558, doi:10.3762/bjnano.12.45

• molecular trapping and their creation is therefore studied for those reasons [32][43][45][46]. In HV-ESD deposition, their presence can be reduced but not inhibited without annealing of the surface [44]. C60 on NiO(001) surface NiO is a wide-bandgap metal oxide with potential applications in organic

• structures are needed, a gentle annealing eliminates the spray influence. Additionally, when focusing on single molecules, small aggregates, or islands, the HV-ESD method is well suited and could open new possibilities to stabilize single molecules at room temperature. Experimental Sample preparation Au(111

• ) single crystals (Mateck GmbH) were prepared under UHV conditions by several cycles of Ar+ sputtering and annealing at 750 K. KBr(001) crystals (Mateck GmbH) were prepared either by cleavage in air and quick introduction in UHV or by cleavage under UHV conditions. Subsequently, annealing at 350 K for 2 h

Determining amplitude and tilt of a lateral force microscopy sensor

• Oliver Gretz,
• Alfred J. Weymouth,
• Thomas Holzmann,
• Korbinian Pürckhauer and
• Franz J. Giessibl

Beilstein J. Nanotechnol. 2021, 12, 517–524, doi:10.3762/bjnano.12.42

• , Germany) operating in ultra-high vacuum at 5.6 K equipped with a qPlus sensor [25]. The sensor was equipped with an etched tungsten tip, which was repeatedly poked into a Cu(111) surface to generate well-defined tip apex configurations. Cu(111) was cleaned by standard sputtering and annealing cycles

Interface interaction of transition metal phthalocyanines with strontium titanate (100)

• Reimer Karstens,
• Thomas Chassé and
• Heiko Peisert

Beilstein J. Nanotechnol. 2021, 12, 485–496, doi:10.3762/bjnano.12.39

• treatments [12][13] or water leaching [14][15]. The SrO termination is often achieved via thermal Sr segregation [16][17][18] or by deposition of SrO in vacuo [19][20]. Due to the thermal Sr segregation effect, sputtering and annealing procedures result commonly in SrO-terminated surfaces [21]. The detailed

• × 10 × 0.5 mm3, 0.5 wt % Nb). The surfaces were typically prepared in vacuo by repeated cycles of Ar ion sputtering (0.5 kV, p(Ar) = 5 × 10−5 mbar, 30 min) and annealing (900 K, p(O2) = 4 × 10−5 mbar, 30 min). This method is called “preparation I” in the following. We note that this procedure results

• (preparation II, experiment 2) and 4.15 eV (preparation II, experiment 1), although a very similar annealing procedure was applied. The work function variations indicate that different fractions of mixed terminations were prepared. The highest value of 4.15 eV points to a predominantly TiO2-terminated STO(100

Reconstruction of a 2D layer of KBr on Ir(111) and electromechanical alteration by graphene

• Zhao Liu,
• Antoine Hinaut,
• Stefan Peeters,
• Sebastian Scherb,
• Ernst Meyer,
• Maria Clelia Righi and
• Thilo Glatzel

Beilstein J. Nanotechnol. 2021, 12, 432–439, doi:10.3762/bjnano.12.35

• . Methods Sample preparation The Ir(111) single crystal (MaTeck GmbH, Germany) was cleaned by alternating cycles of Ar+ sputtering and annealing at 1400 K under ultrahigh vacuum (UHV) conditions with a base pressure of less than 1 × 10−10 mbar. Graphene was prepared by dosing ethylene with a chamber

Solution combustion synthesis of a nanometer-scale Co₃O₄ anode material for Li-ion batteries

• Monika Michalska,
• Huajun Xu,
• Qingmin Shan,
• Shiqiang Zhang,
• Yohan Dall'Agnese,
• Yu Gao,
• Amrita Jain and
• Marcin Krajewski

Beilstein J. Nanotechnol. 2021, 12, 424–431, doi:10.3762/bjnano.12.34

• , annealing or calcination. The SCS method has been successfully used to produce spinel-structured Co3O4 nanomaterials [48][49][50][51][52]. Taking advantage of these reports, we decided to design a new SCS synthesis path in which we applied for the first time ᴅ-(+)-glucose as the reducing agent instead of

Spontaneous shape transition of Mn_xGe_1−x islands to long nanowires

• S. Javad Rezvani,
• Luc Favre,
• Gabriele Giuli,
• Yiming Wubulikasimu,
• Isabelle Berbezier,
• Augusto Marcelli,
• Luca Boarino and
• Nicola Pinto

Beilstein J. Nanotechnol. 2021, 12, 366–374, doi:10.3762/bjnano.12.30

• spontaneous shape transition, from regular islands to elongated nanowires, upon high-temperature annealing of a thin Mn wetting layer evaporated on Ge(111). We demonstrate that 4.5 monolayers is the critical thickness of the Mn layer, governing the shape transition to wires. A small change around this value

• tend to ≃80 nm of width. We found that tuning the annealing process allows one to extend the wire length up to ≃1.5 μm with a minor rise of the lateral size to ≃100 nm. The elongation process of the nanostructures is in agreement with a strain-driven shape transition mechanism proposed in the

• formation of quantum wires [35]. In this method, wires are obtained via epitaxial growth of a strained wetting layer followed by annealing at high temperature. However, only few studies have been dedicated to strain-induced elongation mechanisms leading to the formation of semiconducting nanowires, such as

Differences in surface chemistry of iron oxide nanoparticles result in different routes of internalization

• Barbora Svitkova,
• Vlasta Zavisova,
• Veronika Nemethova,
• Martina Koneracka,
• Miroslava Kretova,
• Filip Razga,
• Monika Ursinyova and
• Alena Gabelova

Beilstein J. Nanotechnol. 2021, 12, 270–281, doi:10.3762/bjnano.12.22

• primer (5′-CTAAGCAGTTGGTGGTGCAG-3′), on a CFX96TM Real-Time PCR Detection System cycler (Bio-Rad). Specifically, samples were denatured at 95 °C for 10 min, and the quantification program had 40 repeats (30 s annealing at 60 °C, 30s amplification at 72 °C). GAPDH was used as a “housekeeping” gene for the

Extended iron phthalocyanine islands self-assembled on a Ge(001):H surface

• Rafal Zuzak,
• Marek Szymonski and
• Szymon Godlewski

Beilstein J. Nanotechnol. 2021, 12, 232–241, doi:10.3762/bjnano.12.19

• annealing. Here, we obtain islands composed of upright-standing molecules already at room temperature, which indicates a dominant role of intermolecular forces compared to interactions between molecules and hydrogenated surface. In order to analyze in more detail the properties of the FePc islands, we

TiO_x/Pt₃Ti(111) surface-directed formation of electronically responsive supramolecular assemblies of tungsten oxide clusters

• Marco Moors,
• Yun An,
• Agnieszka Kuc and
• Kirill Yu. Monakhov

Beilstein J. Nanotechnol. 2021, 12, 203–212, doi:10.3762/bjnano.12.16

• , respectively. After the annealing at 600 K, hardly any single nanocluster can be found on the surface. In return, the step edges are now highly decorated with clusters, while the terraces are covered by up to 1 nm high and 5 nm wide cluster agglomerations. This indicates a high lateral mobility of the clusters

• at elevated temperatures, which allows for an energy contact by agglomeration due to strong intermolecular interactions. After annealing the sample at 900 K, the formation of larger islands is observed. The thickness of these islands is always approx. 0.6 nm, which indicates the formation of a WO3

• structures with a low influence of molecular electronic features. Thus, annealing a surface covered with W3O9 may also be used as a gentle way to grow well-defined WO3 islands or thin films. In that context, the observed thickness limitation of two WO3 unit cells could be of special interest since the height

Direct observation of the Si(110)-(16×2) surface reconstruction by atomic force microscopy

• Tatsuya Yamamoto,
• Ryo Izumi,
• Kazushi Miki,
• Takahiro Yamasaki,
• Yasuhiro Sugawara and
• Yan Jun Li

Beilstein J. Nanotechnol. 2020, 11, 1750–1756, doi:10.3762/bjnano.11.157

• reliable production of nanowires and other nanostructures [7][10][11][12][13]. By annealing below 700 °C [14], the Si(110)-(16×2) reconstruction is formed over large areas on the Si(110) surface. It has been widely investigated by reflection high-energy electron diffraction (RHEED) analysis [14][15

• 1200 °C for 3 s and annealing at 650 °C for 30 min. The sample was heated by flowing an electric current in the direction; thereby, a single-domain surface can be easily formed on the Si(110) surface [10]. Results and Discussion Figure 1 shows a typical AFM image of a Si(110) surface. The

The influence of an interfacial hBN layer on the fluorescence of an organic molecule

• Christine Brülke,
• Oliver Bauer and
• Moritz M. Sokolowski

Beilstein J. Nanotechnol. 2020, 11, 1663–1684, doi:10.3762/bjnano.11.149

• of borazine that is known to occur even when stored at low temperatures, m/z 2) and borazine (m/z 80) showed a ratio of approximately 1:1. The clean Cu(111) surface was prepared by consecutive steps of sputtering for 30 min with Ar+ ions (1000 eV, 4 μA) and annealing at 1010 K for 30 min. After the

• ) surface, the hBN layers, and the PTCDA layers was checked by LEED. We used a SPA-LEED instrument as described in [30]. An additional annealing step between the last sputter cycle and the borazine deposition was omitted here in order to prevent segregation of chemical impurities from the Cu bulk to the

• minute. During deposition, the sample was held at a constant temperature. PTCDA layers on Cu(111) were prepared by keeping the sample at a temperature of either 20 or 300 K during deposition. PTCDA layers on hBN/Cu(111) were prepared by deposition at a sample temperature of 20 K and subsequent annealing

Amorphized length and variability in phase-change memory line cells

• Nafisa Noor,
• Sadid Muneer,
• Raihan Sayeed Khan,
• Anna Gorbenko and
• Helena Silva

Beilstein J. Nanotechnol. 2020, 11, 1644–1654, doi:10.3762/bjnano.11.147

• approx. 1 mTorr at a temperature of 675 K for 10 min to reach the crystalline phase (annealing profile shown in Figure 2a). The electrical measurements were performed at room temperature. Electrical pulses, generated by an arbitrary function generator (Tektronix AFG 3102), were applied to the cells; a

• profile used for annealing the as-fabricated amorphous devices to the crystalline phase, with a constant temperature of 675 K for the last 10 min. Inset shows the SEM image of an untested annealed GST line cell, with metal-to-metal LGST ≈ 470 nm, WGST ≈ 130 nm, and tGST ≈ 50 nm. (b) Electrical measurement