Polymer blend lithography for metal films: large-area patterning with over 1 billion holes/inch²

• Cheng Huang,
• Alexander Förste,
• Stefan Walheim and
• Thomas Schimmel

Beilstein J. Nanotechnol. 2015, 6, 1205–1211, doi:10.3762/bjnano.6.123

• metal or semiconductor nanopatterns, such as electron beam lithography [7][8][9], nanosphere lithography [10][11][12][13], laser interference lithography [14][15], AFM-based dip-pen lithography [16], and more. Masuda and his colleagues used anodic porous alumina as lithographic mask for the fabrication

Charge carrier mobility and electronic properties of Al(Op)₃: impact of excimer formation

• Andrea Magri,
• Pascal Friederich,
• Bernhard Schäfer,
• Valeria Fattori,
• Xiangnan Sun,
• Timo Strunk,
• Velimir Meded,
• Luis E. Hueso,
• Wolfgang Wenzel and
• Mario Ruben

Beilstein J. Nanotechnol. 2015, 6, 1107–1115, doi:10.3762/bjnano.6.112

• –SiO2 substrates by electron beam lithography (Raith 150). These electrodes were deposited under high vacuum (Oerlikon evaporator) with an architecture composed of a 1.2 nm Ti bottom part and a 42 nm Au top part. Before depositing the organic layer, the substrate was cleaned by oxygen plasma for 5 min

Fabrication of high-resolution nanostructures of complex geometry by the single-spot nanolithography method

• Alexander Samardak,
• Margarita Anisimova,
• Aleksei Samardak and
• Alexey Ognev

Beilstein J. Nanotechnol. 2015, 6, 976–986, doi:10.3762/bjnano.6.101

• production of polymer nanopatterns with controllable geometrical parameters by means of a single-spot electron-beam lithography technique. The essence of the method entails the overexposure of a positive-tone resist, spin-coated onto a substrate where nanoscale spots are exposed to an electron beam with a

• structures of desired geometry with a spatial resolution of less than 100 nm. One of the most advanced and in-demand technologies is mask-free or direct-write lithography based on the interaction of an electron beam with a polymer resist [1]. Under normal conditions, electron-beam lithography (EBL) enables

• , respectively. As has been shown above, the low energy single-spot electron-beam lithography method overcomes the disadvantages of conventional lithography on positive-tone resist. This method enables the formation of complex polymer nanostructures of any shape with a minimum line width of 10 nm not only on

Electroburning of few-layer graphene flakes, epitaxial graphene, and turbostratic graphene discs in air and under vacuum

• Andrea Candini,
• Nils Richter,
• Domenica Convertino,
• Camilla Coletti,
• Franck Balestro,
• Wolfgang Wernsdorfer,
• Mathias Kläui and
• Marco Affronte

Beilstein J. Nanotechnol. 2015, 6, 711–719, doi:10.3762/bjnano.6.72

• suppression of conductance fluctuations [14]. Recent works have successfully made use of graphene for the realization of electrodes in molecular devices [10][17]. Specifically, parallel multi-junctions devices have been fabricated in chemical vapor deposition (CVD) graphene by electron beam lithography and

• defined on the discs by electron beam lithography. More than 10 discs have been contacted and underwent the EB process in air. In all of these experiments the EB took place at the contact areas as exemplary shown in Figure 5a and it was not possible to reach sufficiently high current densities to initiate

• checked by micro-Raman spectroscopy, see Supporting Information File 1 for some examples. Metal contacts (10 nm Cr/100 nm Au) on the graphene sheets have been obtained by electron beam lithography (EBL), thermal evaporation and lift-off in acetone. Turbostratic graphene was obtained on on-axis SiC(000−1

Manipulation of magnetic vortex parameters in disk-on-disk nanostructures with various geometry

• Maxim E. Stebliy,
• Alexander G. Kolesnikov,
• Alexey V. Ognev,
• Alexander S. Samardak and
• Ludmila A. Chebotkevich

Beilstein J. Nanotechnol. 2015, 6, 697–703, doi:10.3762/bjnano.6.70

• diameters of 600 and 200 nm, respectively, were separated by a 3 nm thick Cu interlayer. The nanostructures were fabricated on naturally oxidized Si(111) substrates by means of electron-beam lithography, magnetron sputtering and standard lift-off process. Geometry and surface roughness were checked with

Fundamental edge broadening effects during focused electron beam induced nanosynthesis

• Roland Schmied,
• Jason D. Fowlkes,
• Robert Winkler,
• Phillip D. Rack and
• Harald Plank

Beilstein J. Nanotechnol. 2015, 6, 462–471, doi:10.3762/bjnano.6.47

• 500 nm SiO2 top-layer providing a root mean square (RMS) surface roughness values of less than 0.1 nm, and 2) the same substrates with 60 nm Au electrodes, fabricated through electron-beam lithography using a 3 nm Cr interfacial adhesion layer. While the former were used for atomic force microscopy

Localized surface plasmon resonances in nanostructures to enhance nonlinear vibrational spectroscopies: towards an astonishing molecular sensitivity

• Dan Lis and
• Francesca Cecchet

Beilstein J. Nanotechnol. 2014, 5, 2275–2292, doi:10.3762/bjnano.5.237

• ]. They reported a significant amplification of the CO signature on an array of platinum nanopillars, prepared by electron beam lithography, and possessing uniform spacing and size (Figure 7a). As demonstrated by the authors, the amplification was maximal in the ssp polarization. The calculated SFG

Hybrid spin-crossover nanostructures

• Carlos M. Quintero,
• Gautier Félix,
• Iurii Suleimanov,
• José Sánchez Costa,
• Gábor Molnár,
• Lionel Salmon,
• William Nicolazzi and
• Azzedine Bousseksou

Beilstein J. Nanotechnol. 2014, 5, 2230–2239, doi:10.3762/bjnano.5.232

• beam lithography (EBL) and lift off strategies, we developed localized surface plasmon (LSP) substrates consisting of a series of arrays of gold nanorods with different aspect ratios (Figure 7a) [34]. After this, the photonic device was finalized with a 60 nm thin film of the SCO complex, Fe(hptrz)3

• this point of view, SCO complexes are of great interest due to the substantial variation of the real part of their refractive index (n) throughout the entire UV, visible and IR frequency ranges. In our research, we proposed a hybrid, SCO–plasmonic device based on gold nanostructures. Employing electron

Towards bottom-up nanopatterning of Prussian blue analogues

• Virgile Trannoy,
• Marco Faustini,
• David Grosso,
• Sandra Mazerat,
• François Brisset,
• Alexandre Dazzi and
• Anne Bleuzen

Beilstein J. Nanotechnol. 2014, 5, 1933–1943, doi:10.3762/bjnano.5.204

• optical and electron beam lithography. Here, we explore the possibilities of elaborating nanopatterned surfaces by a pure bottom-up approach. The nanopatterned surfaces are mainly built from molecular precursors in solution through a succession of chemical steps. The advantages of this approach are very

High speed e-beam lithography for gold nanoarray fabrication and use in nanotechnology

• Jorge Trasobares,
• François Vaurette,
• Marc François,
• Hans Romijn,
• Jean-Louis Codron,
• Dominique Vuillaume,
• Didier Théron and
• Nicolas Clément

Beilstein J. Nanotechnol. 2014, 5, 1918–1925, doi:10.3762/bjnano.5.202

• actual limitation of the proposed high-speed writing technique is the resist exposure time. Recently, direct patterning of high density sub-15 nm gold dot array using ultrahigh contrast electron beam lithography process on positive tone resist has been demonstrated [21]. Combination of high contrast

The influence of molecular mobility on the properties of networks of gold nanoparticles and organic ligands

• Edwin J. Devid,
• Paulo N. Martinho,
• M. Venkata Kamalakar,
• Úna Prendergast,
• Christian Kübel,
• Tibebe Lemma,
• Jean-François Dayen,
• Tia. E. Keyes,
• Bernard Doudin,
• Mario Ruben and
• Sense Jan van der Molen

Beilstein J. Nanotechnol. 2014, 5, 1664–1674, doi:10.3762/bjnano.5.177

• polyimide (Kapton) films) and electron beam lithography-written high-aspect-ratio (HAR) nanotrench electrodes devices [25]. The Au-NP–S-BPP arrays are stored in a dark and cold environment and can be kept for several months. Results and Discussion Imaging of Au-NP–S-BPP arrays and networks Scanning

• ) characteristics are linear and practically independent of temperature. The same method as in [5] is used to investigate the charge transport through Au-NP–S-BPP networks. We fabricate nanotrench devices with a high width-to-length aspect ratio (ca. 200) by electron beam lithography and metal lift-off. Through

Near-field photochemical and radiation-induced chemical fabrication of nanopatterns of a self-assembled silane monolayer

• Ulrich C. Fischer,
• Carsten Hentschel,
• Florian Fontein,
• Linda Stegemann,
• Christiane Hoeppener,
• Harald Fuchs and
• Stefanie Hoeppener

Beilstein J. Nanotechnol. 2014, 5, 1441–1449, doi:10.3762/bjnano.5.156

• growth and mobility of cells on surfaces [14]. Top-down as well as bottom-up fabrication methods are applied in the field of chemical nanostructuring. Thus, chemical nanopatterns were formed by using different approaches, including electro-oxidative nanolithography [15], electron beam lithography [16

Self-organization of mesoscopic silver wires by electrochemical deposition

• Sheng Zhong,
• Thomas Koch,
• Stefan Walheim,
• Harald Rösner,
• Eberhard Nold,
• Aaron Kobler,
• Torsten Scherer,
• Di Wang,
• Christian Kübel,
• Mu Wang,
• Horst Hahn and
• Thomas Schimmel

Beilstein J. Nanotechnol. 2014, 5, 1285–1290, doi:10.3762/bjnano.5.142

• methods to fabricate mesoscale metallic wires: Electron beam lithography is a precise and well-controlled method, yet for larger numbers of wires rather expensive and time consuming. Electrochemically oxidized anodic alumina membrane (AAM) templates are also often used to fabricate metallic nanowires [24

Review of nanostructured devices for thermoelectric applications

• Giovanni Pennelli

Beilstein J. Nanotechnol. 2014, 5, 1268–1284, doi:10.3762/bjnano.5.141

• surface by advanced lithographic tools, such as electron beam lithography [90][91], atomic force lithography [94][95][97] and even optical lithography [69][93]. Etching, oxidation and other fabrication processes are then used to define structures with nanometric dimensions. Top-down fabrication is

• process, based on electron beam lithography, anisotropic silicon etching and stress-limited oxidation, is shown in the sketches of Figure 7. This process [91][92][93] has been developed on a silicon-on-insulator (SOI) substrate, <100> oriented, which is becoming largely employed in the semiconductor

• type (n or p) and as doping concentration, by exploiting standard silicon doping processes. A 50–80 nm thick silicon dioxide (SiO2) top layer, to be used as a mask for the silicon etching, is grown by dry thermal oxidation. This top SiO2 layer is patterned by means of electron beam lithography through

Topology assisted self-organization of colloidal nanoparticles: application to 2D large-scale nanomastering

• Hind Kadiri,
• Serguei Kostcheev,
• Daniel Turover,
• Rafael Salas-Montiel,
• Komla Nomenyo,
• Anisha Gokarna and
• Gilles Lerondel

Beilstein J. Nanotechnol. 2014, 5, 1203–1209, doi:10.3762/bjnano.5.132

• scale ordered structures. This method combines top-down and bottom-up approaches [18]. In the top-down approach a guide post template is fabricated by an electron beam lithography (EBL) technique on a silicon surface. Thereafter, on these guide posts, self-organization of polystyrene beads is conducted

• exposed posts, without requiring further etching or processing. We tried various diameters and pitches of the posts obtained by electron beam lithography and studied their influence on the self-organization of the beads. Diameters of these posts ranged from 195 nm to 420 nm with a height of 600 nm and the

Hole-mask colloidal nanolithography combined with tilted-angle-rotation evaporation: A versatile method for fabrication of low-cost and large-area complex plasmonic nanostructures and metamaterials

• Jun Zhao,
• Bettina Frank,
• Frank Neubrech,
• Chunjie Zhang,
• Paul V. Braun and
• Harald Giessen

Beilstein J. Nanotechnol. 2014, 5, 577–586, doi:10.3762/bjnano.5.68

• new large-area mask for each separate pattern. Such masks are usually prepared by electron-beam lithography. Direct laser writing by two-photon polymerization is a promising approach, since it allows for more flexibility and large areas, as well as for chiral structures [16][17][18]. However, this

Fabrication of carbon nanomembranes by helium ion beam lithography

• Xianghui Zhang,
• Henning Vieker,
• André Beyer and
• Armin Gölzhäuser

Beilstein J. Nanotechnol. 2014, 5, 188–194, doi:10.3762/bjnano.5.20

• conducted by exposure to electrons [10] and photons [11]. Electron irradiation induces the dissociation of C–H bonds at the phenyl rings. The consequent cross-linking between adjacent aromatic moieties is a critical step in the formation of CNMs. Both electron beam lithography and extreme ultraviolet (EUV

Mapping of plasmonic resonances in nanotriangles

• Simon Dickreuter,
• Julia Gleixner,
• Andreas Kolloch,
• Johannes Boneberg,
• Elke Scheer and
• Paul Leiderer

Beilstein J. Nanotechnol. 2013, 4, 588–602, doi:10.3762/bjnano.4.66

• been removed by the laser pulse (see, e.g., Figure 5, which will be discussed in detail below). The electron-beam lithography samples were prepared on a silicon (Si) wafer with a native silicon oxide (SiO2) layer with a thickness of 2.4 nm (measured by ellipsometry), for the wafers used for colloid

• two different types of nanotriangles prepared by electron beam lithography, and their corresponding ablation patterns for two orientations with respect to the polarization of the incident laser light. The local fluence is indicated below each frame. FDTD calculations for the structures presented in

• beam lithography. The material used was exclusively gold. Figure 3a and Figure 3b present an example for the first and Figure 3c and Figure 3d for the second technique, respectively. In colloid lithography, self-assembled monolayers of meso- or nanoscopic spherical particles are produced by self

3D nano-structures for laser nano-manipulation

• Gediminas Seniutinas,
• Lorenzo Rosa,
• Gediminas Gervinskas,
• Etienne Brasselet and
• Saulius Juodkazis

Beilstein J. Nanotechnol. 2013, 4, 534–541, doi:10.3762/bjnano.4.62

• films from nano-holes defined in a sacrificial PMMA mask, which was made by electron beam lithography, was carried out with a dry plasma etching tool in order to form well-like structures with a high aspect ratio (height/width ≈ 3–4) at the rims of the nano-holes. The extraordinary transmission through

• . Patterns on a sacrificial 300-nm thick PMMA mask were defined by electron beam lithography (EBL; Raith 150TWO). The mask was spin coated on a cover glass which was magnetron sputter-coated (AXXIS, JKLesker) with a 100 nm thick gold film. Figure 1a and Figure 1b show a sketch of the sample structure before

Guided immobilisation of single gold nanoparticles by chemical electron beam lithography

• Patrick A. Schaal and
• Ulrich Simon

Beilstein J. Nanotechnol. 2013, 4, 336–344, doi:10.3762/bjnano.4.39

• interest. In this paper we present a straight-forward three-step procedure based on chemical electron beam lithography, which is capable of producing such arrays with gold nanoparticles (AuNPs). Preformed 6 nm AuNPs are immobilised on thiol patterns with a pitch of 100 nm by guided self-assembly

• in biohybrid devices [5][6]. The most common technique to generate such structures is the evaporation of a thin metal film through a resist mask structured by electron beam lithography (EBL) or other lithographic techniques [1][7]. In general, these fabrication techniques involve five or more

A highly pH-sensitive nanowire field-effect transistor based on silicon on insulator

• Denis E. Presnov,
• Sergey V. Amitonov,
• Pavel A. Krutitskii,
• Valentina V. Kolybasova,
• Igor A. Devyatov,
• Vladimir A. Krupenin and
• Igor I. Soloviev

Beilstein J. Nanotechnol. 2013, 4, 330–335, doi:10.3762/bjnano.4.38

• width of 100 nm is presented. We used Soitec SOI wafers with a device layer of 55 nm and a buried oxide layer of 145 nm. The device layer is boron doped with a concentration of about 1015 cm−3. The fabrication steps included [9] Electron-beam lithography in positive resist to pattern the image of the NW

• and contact pads. Aluminium mask e-beam vapour deposition. Anisotropic reactive ion etching of the device layer through the Al mask and mask removal. Magnetron sputtering of titanium electrodes and their isolation with silica to allow measurements in liquids. Both optical and electron-beam lithography

Functionalization of vertically aligned carbon nanotubes

• Eloise Van Hooijdonk,
• Carla Bittencourt,
• Rony Snyders and
• Jean-François Colomer

Beilstein J. Nanotechnol. 2013, 4, 129–152, doi:10.3762/bjnano.4.14

• strategies are related to the first method in which the pre-patterning of the substrate is obtained by using shadow masks, photolithography and electron-beam-lithography (e-beam lithography). The first example, was given by Fan et al. [25]. These authors synthesized aligned carbon nanotubes in tower-like

Plasmonic oligomers in cylindrical vector light beams

• Mario Hentschel,
• Jens Dorfmüller,
• Harald Giessen,
• Sebastian Jäger,
• Andreas M. Kern,
• Kai Braun,
• Dai Zhang and
• Alfred J. Meixner

Beilstein J. Nanotechnol. 2013, 4, 57–65, doi:10.3762/bjnano.4.6

• derived the necessary prerequisites for the efficient launch of magnetic plasmon propagation. In our experiments we utilized high-resolution electron-beam lithography for the fabrication of the nanostructures. In order to study the excitation of magnetic modes we used a home-built combined near-field

• number, size, and spatial arrangement of the individual particles, allows for the tuning of the strength and spectral position of the transparency window. Under certain conditions, the Fano resonance even vanishes completely [21]. Electron-beam lithography is a highly controllable top-down technique that

• of complex plasmonic oligomers with tailorable optical properties. Adapted with permission from [21]. Copyright (2011) American Chemical Society. (b) Scanning-electron micrographs of oligomers clusters, demonstrating the unique capability of electron-beam lithography to create many of the different

Diamond nanophotonics

• Katja Beha,
• Helmut Fedder,
• Marco Wolfer,
• Merle C. Becker,
• Petr Siyushev,
• Mohammad Jamali,
• Anton Batalov,
• Christopher Hinz,
• Jakob Hees,
• Lutz Kirste,
• Harald Obloh,
• Etienne Gheeraert,
• Boris Naydenov,
• Ingmar Jakobi,
• Florian Dolde,
• Sébastien Pezzagna,
• Daniel Twittchen,
• Matthew Markham,
• Daniel Dregely,
• Harald Giessen,
• Jan Meijer,
• Fedor Jelezko,
• Christoph E. Nebel,
• Rudolf Bratschitsch,
• Alfred Leitenstorfer and
• Jörg Wrachtrup

Beilstein J. Nanotechnol. 2012, 3, 895–908, doi:10.3762/bjnano.3.100

• implantation energies, which generate color centers a few nanometers below the surface, polymer resists with apertures written by electron beam lithography can be used. At higher energies, which create color centers up to a micron deep inside the diamond, suitable masks are thin mica sheets (thickness few

• centers. Such diamond nanocrystals can be as small as 10 nm. By using suitable fabrication steps, plasmonic structures can be fabricated around such crystals with precise spatial control. In this process, first, gold markers are fabricated on a glass substrate by using electron beam lithography

Characterization and properties of micro- and nanowires of controlled size, composition, and geometry fabricated by electrodeposition and ion-track technology

• Maria Eugenia Toimil-Molares

Beilstein J. Nanotechnol. 2012, 3, 860–883, doi:10.3762/bjnano.3.97

• two areas of fabrication and characterization, great advances have been reported in recent years. Methods to fabricate nanowires include top-down approaches such as optical and electron-beam lithography, and focused ion beam. More commonly applied bottom-up approaches are, e.g., vapour–liquid–solid

• , the metal-coated tip of a scanning force microscope, optical and electron beam lithography, or manipulators [130][131][132]. In the case of electrodeposited nanowires, most groups reported the production of large arrays of wires and the subsequent selection of individual wires being contacted with