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Search for "epitaxy" in Full Text gives 76 result(s) in Beilstein Journal of Nanotechnology.

Fragmentation of metal(II) bis(acetylacetonate) complexes induced by slow electrons

  • Janina Kopyra and
  • Hassan Abdoul-Carime

Beilstein J. Nanotechnol. 2023, 14, 980–987, doi:10.3762/bjnano.14.81

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  • . Metal bis(acetylacetonate) complexes are of interest for many thin film fabrication techniques (e.g., chemical vapor deposition [9], atomic layer epitaxy [10], or atomic layer etching [11]) and as precursors for carbon materials, such as carbon nanotubes and carbon onion particles [12], or metal oxide
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Published 26 Sep 2023

Two-dimensional molecular networks at the solid/liquid interface and the role of alkyl chains in their building blocks

  • Suyi Liu,
  • Yasuo Norikane and
  • Yoshihiro Kikkawa

Beilstein J. Nanotechnol. 2023, 14, 872–892, doi:10.3762/bjnano.14.72

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  • aromatic units. Generally, dispersion forces are interpreted as non-directional interactions. However, the interaction between HOPG and alkyl chains causes directional orientation because of the epitaxy defined by the threefold symmetric axis of the HOPG lattice, that is, alkyl chains align along the HOPG
  • follows: (i) The alkyl chains assist adsorption onto the HOPG surface with epitaxy, enabling the formation of an oriented physisorbed monolayer. Long alkyl chains can have a strong stabilization energy for adsorption, comparable to other strong supramolecular interactions such as hydrogen bonds. (ii) The
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Published 23 Aug 2023

Plasmonic nanotechnology for photothermal applications – an evaluation

  • A. R. Indhu,
  • L. Keerthana and
  • Gnanaprakash Dharmalingam

Beilstein J. Nanotechnol. 2023, 14, 380–419, doi:10.3762/bjnano.14.33

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Published 27 Mar 2023

Numerical study on all-optical modulation characteristics of quantum cascade lasers

  • Biao Wei,
  • Haijun Zhou,
  • Guangxiang Li and
  • Bin Tang

Beilstein J. Nanotechnol. 2022, 13, 1011–1019, doi:10.3762/bjnano.13.88

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  • multiple nanostructures, which are grown by molecular beam epitaxy (MBE) [1]. It has been widely used in the fields of free space optical communication [2][3], gas detection [4][5], and biological research [6][7]. Because the QCL is a narrow linewidth and high-power laser working in the mid-infrared to
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Published 23 Sep 2022

Self-assembly of C60 on a ZnTPP/Fe(001)–p(1 × 1)O substrate: observation of a quasi-freestanding C60 monolayer

  • Guglielmo Albani,
  • Michele Capra,
  • Alessandro Lodesani,
  • Alberto Calloni,
  • Gianlorenzo Bussetti,
  • Marco Finazzi,
  • Franco Ciccacci,
  • Alberto Brambilla,
  • Lamberto Duò and
  • Andrea Picone

Beilstein J. Nanotechnol. 2022, 13, 857–864, doi:10.3762/bjnano.13.76

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  • an ideal buffer layer for the growth of C60, which forms a compact film weakly coupled with the metallic substrate. Materials and Methods The experiments were performed in two ultrahigh vacuum (UHV) systems. Clean Fe(001) is obtained by deposition of a thick Fe film (500 nm) by molecular beam epitaxy
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Published 30 Aug 2022

Ultrafast signatures of magnetic inhomogeneity in Pd1−xFex (x ≤ 0.08) epitaxial thin films

  • Andrey V. Petrov,
  • Sergey I. Nikitin,
  • Lenar R. Tagirov,
  • Amir I. Gumarov,
  • Igor V. Yanilkin and
  • Roman V. Yusupov

Beilstein J. Nanotechnol. 2022, 13, 836–844, doi:10.3762/bjnano.13.74

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  • beam epitaxy (MBE). The films were 20 nm thick, continuous, and smooth monocrystalline layers. The MBE equipment provided uniformity of the film thickness within 3% on the 1″ lateral size. The film composition x was measured in situ using X-ray photoelectron spectroscopy (all from SPECS, Berlin) with a
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Published 25 Aug 2022

Recent advances in nanoarchitectures of monocrystalline coordination polymers through confined assembly

  • Lingling Xia,
  • Qinyue Wang and
  • Ming Hu

Beilstein J. Nanotechnol. 2022, 13, 763–777, doi:10.3762/bjnano.13.67

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  • structure or orientation of the monocrystalline coordination polymers are hardly affected. However, when solids have a similar lattice structure with the grown coordination polymers, epitaxy happens to guide the growth of the coordination polymers. The crystallographic orientation of the grown coordination
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Published 12 Aug 2022

9.1% efficient zinc oxide/silicon solar cells on a 50 μm thick Si absorber

  • Rafal Pietruszka,
  • Bartlomiej S. Witkowski,
  • Monika Ozga,
  • Katarzyna Gwozdz,
  • Ewa Placzek-Popko and
  • Marek Godlewski

Beilstein J. Nanotechnol. 2021, 12, 766–774, doi:10.3762/bjnano.12.60

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  • environmentally friendly solar cells are cells based on zinc oxide (ZnO). ZnO thin films can be obtained using many technologies, including molecular beam epitaxy, RF magnetron sputtering, pulsed laser deposition, chemical vapor deposition, and atomic layer deposition (ALD) [3]. ALD attracts the attention of many
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Published 21 Jul 2021

Electromigration-induced formation of percolating adsorbate islands during condensation from the gaseous phase: a computational study

  • Alina V. Dvornichenko,
  • Vasyl O. Kharchenko and
  • Dmitrii O. Kharchenko

Beilstein J. Nanotechnol. 2021, 12, 694–703, doi:10.3762/bjnano.12.55

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  • of the adsorbate U(r) becomes the following form: This self-consistent approach was widely used not only in the study of the formation of nanoscale structures of adsorbate by condensation [49][50][51][52][53][54][55][56][57][58][59][60][61][62][63] and epitaxy [66][67][68], but also in the study of
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Published 13 Jul 2021

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

  • Frances I. Allen

Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52

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Published 02 Jul 2021

Properties of graphene deposited on GaN nanowires: influence of nanowire roughness, self-induced nanogating and defects

  • Jakub Kierdaszuk,
  • Piotr Kaźmierczak,
  • Justyna Grzonka,
  • Aleksandra Krajewska,
  • Aleksandra Przewłoka,
  • Wawrzyniec Kaszub,
  • Zbigniew R. Zytkiewicz,
  • Marta Sobanska,
  • Maria Kamińska,
  • Andrzej Wysmołek and
  • Aneta Drabińska

Beilstein J. Nanotechnol. 2021, 12, 566–577, doi:10.3762/bjnano.12.47

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  • the transfer onto NW substrates [31]. Therefore, we used stable orthogonal frames from polydimethylsiloxane (PDMS) polymer to stabilize the graphene during the transfer process [32]. The GaN NW substrates were fabricated by plasma-assisted molecular beam epitaxy (PAMBE) in N-rich conditions on (111
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Published 22 Jun 2021

Spontaneous shape transition of MnxGe1−x islands to long nanowires

  • S. Javad Rezvani,
  • Luc Favre,
  • Gabriele Giuli,
  • Yiming Wubulikasimu,
  • Isabelle Berbezier,
  • Augusto Marcelli,
  • Luca Boarino and
  • Nicola Pinto

Beilstein J. Nanotechnol. 2021, 12, 366–374, doi:10.3762/bjnano.12.30

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  • obtained via chemical methods [28][29] or via vapor–solid–liquid (VLS) and, less frequently, vapor–solid–solid (VSS) mechanisms. A metallic droplet (liquid or solid) acts as a catalyst, in chemical vapor deposition (CVD), or as a seed, in molecular beam epitaxy (MBE), for the NW growth [7][30][31]. By
  • heteroepitaxial growth, it may be considered valid also for solid-phase epitaxy, which occurs in our system (Mn wetting layer on Ge), since the key role in the process is the mechanism of diffusion of adatoms (i.e., Mn) occurring also during the annealing process. According to this model, the optimal island shape
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Published 28 Apr 2021

Imaging and milling resolution of light ion beams from helium ion microscopy and FIBs driven by liquid metal alloy ion sources

  • Nico Klingner,
  • Gregor Hlawacek,
  • Paul Mazarov,
  • Wolfgang Pilz,
  • Fabian Meyer and
  • Lothar Bischoff

Beilstein J. Nanotechnol. 2020, 11, 1742–1749, doi:10.3762/bjnano.11.156

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  • mass-separated FIBs from a Co36Nd64 LMAIS to implant Co into Si at elevated temperatures, leading to metallic CoSi2 nanostructures down to 20 nm [13]. Ge nanowires could be grown by molecular beam epitaxy, via a vapor–liquid–solid process, on a Si substrate after formation of a regular seed array using
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Published 18 Nov 2020

PTCDA adsorption on CaF2 thin films

  • Philipp Rahe

Beilstein J. Nanotechnol. 2020, 11, 1615–1622, doi:10.3762/bjnano.11.144

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  • -state imaging of the (7 × 7) reconstruction [27]. Due to the type-B epitaxy of CaF2 on Si(111) at the chosen growth parameters, the CaF2 direction is identical to the Si direction that was determined from STM images. Three equivalent CaF2 directions are depicted at the right of the exemplary image in
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Published 26 Oct 2020

Self-assembly and spectroscopic fingerprints of photoactive pyrenyl tectons on hBN/Cu(111)

  • Domenik M. Zimmermann,
  • Knud Seufert,
  • Luka Ðorđević,
  • Tobias Hoh,
  • Sushobhan Joshi,
  • Tomas Marangoni,
  • Davide Bonifazi and
  • Willi Auwärter

Beilstein J. Nanotechnol. 2020, 11, 1470–1483, doi:10.3762/bjnano.11.130

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  • coverage of the pyrene modules was deposited by organic molecular beam epitaxy from thoroughly degassed quartz crucibles held at 450–500 K. During deposition, the Cu(111) surface was kept at rt, and the pressure remained below 2 × 10–9 mbar. The STM images were acquired in constant current mode, with the
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Published 29 Sep 2020

Protruding hydrogen atoms as markers for the molecular orientation of a metallocene

  • Linda Laflör,
  • Michael Reichling and
  • Philipp Rahe

Beilstein J. Nanotechnol. 2020, 11, 1432–1438, doi:10.3762/bjnano.11.127

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  • determined by considering the B-type epitaxy of the CaF2/CaF1/Si(111) thin films samples, see [22][26] for further details. STM and NC-AFM experiments were conducted at low temperatures (5 and 77 K) in two separate systems. Experiments on bulk crystals were performed using an Omicron LT qPlus gen.III
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Published 22 Sep 2020

Analysis of catalyst surface wetting: the early stage of epitaxial germanium nanowire growth

  • Owen C. Ernst,
  • Felix Lange,
  • David Uebel,
  • Thomas Teubner and
  • Torsten Boeck

Beilstein J. Nanotechnol. 2020, 11, 1371–1380, doi:10.3762/bjnano.11.121

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  • wetting layer in between. The molecular beam epitaxy (MBE) experiments show that there is no material exchange between the gold droplets formed on the silicon oxide substrate. The data indicate a re-evaporation process at elevated temperatures, which is due to a temperature-induced overall reduction of
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Published 09 Sep 2020

Growth of a self-assembled monolayer decoupled from the substrate: nucleation on-command using buffer layers

  • Robby Reynaerts,
  • Kunal S. Mali and
  • Steven De Feyter

Beilstein J. Nanotechnol. 2020, 11, 1291–1302, doi:10.3762/bjnano.11.113

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  • alkyl chains because the soft-epitaxy of such chains with the graphite lattice is well established [43][44][45]. In this contribution, we present a systematic, curiosity-driven study of the self-assembly of a relatively simple building block, namely 4-tetradecyloxybenzoic acid (BA-OC14, Figure 1a), with
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Published 01 Sep 2020

Hybridization vs decoupling: influence of an h-BN interlayer on the physical properties of a lander-type molecule on Ni(111)

  • Maximilian Schaal,
  • Takumi Aihara,
  • Marco Gruenewald,
  • Felix Otto,
  • Jari Domke,
  • Roman Forker,
  • Hiroyuki Yoshida and
  • Torsten Fritz

Beilstein J. Nanotechnol. 2020, 11, 1168–1177, doi:10.3762/bjnano.11.101

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  • corresponding epitaxy matrix as well as the lattice parameters are summarized in Table 1. We used the projection method proposed by Forker et al. to identify possible coincidences of the adsorbate and the substrate lattice [35]. We find more than one possible coincidence within the error margin of the epitaxy
  • vector is labeled with δ. Before each epitaxy matrix a prefactor along with its margin of error indicates the absolute scaling uncertainty of the analyzed LEED image. Please note that the epitaxy matrix of DBP on Au(111) and on Ag(111) deviates from the matrix of DBP on h-BN/Ni(111) because of different
  • lattice constants of the substrate as well as slightly different lattice parameters of the adsorbate. We used the acronyms POL and LOL (for point-on-line and line-on-line epitaxy) to characterize the type of epitaxy. The uncertainty of the numerical fitting procedure is given in parentheses behind each
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Published 04 Aug 2020

Electrochemical nanostructuring of (111) oriented GaAs crystals: from porous structures to nanowires

  • Elena I. Monaico,
  • Eduard V. Monaico,
  • Veaceslav V. Ursaki,
  • Shashank Honnali,
  • Vitalie Postolache,
  • Karin Leistner,
  • Kornelius Nielsch and
  • Ion M. Tiginyanu

Beilstein J. Nanotechnol. 2020, 11, 966–975, doi:10.3762/bjnano.11.81

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  • a GaAsSb NW IR detector (1300 nm), although the responsivity of the GaAsSb NW detector is better [34]. A photodetector based on a single GaAs nanowire with a responsivity of 1.2 mA·W−1 has been recently reported on a nanowire prepared by chemical beam epitaxy (CBE) with a vapor–liquid–solid (VLS
  • our GaAs nanowire detector working in the photoconductor mode is by a factor of 1.5 better than the value obtained recently on molecular beam epitaxy (MBE)-grown Si-doped GaAs nanowires with a carrier concentration of 1.47 × 1017 cm−3, working in the field-effect transistor (FET) mode at similar
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Published 29 Jun 2020

Band tail state related photoluminescence and photoresponse of ZnMgO solid solution nanostructured films

  • Vadim Morari,
  • Aida Pantazi,
  • Nicolai Curmei,
  • Vitalie Postolache,
  • Emil V. Rusu,
  • Marius Enachescu,
  • Ion M. Tiginyanu and
  • Veaceslav V. Ursaki

Beilstein J. Nanotechnol. 2020, 11, 899–910, doi:10.3762/bjnano.11.75

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  • radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE) [2][7][10][11], DC [12][13] and RF [1][3][6] magnetron sputtering, pulsed laser deposition (PLD) [14][15], plasma-enhanced atomic layer deposition (PE-ALD) [16], chemical vapor deposition (CVD) [17], metal–organic chemical vapor deposition
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Published 12 Jun 2020

Epitaxial growth and superconducting properties of thin-film PdFe/VN and VN/PdFe bilayers on MgO(001) substrates

  • Wael M. Mohammed,
  • Igor V. Yanilkin,
  • Amir I. Gumarov,
  • Airat G. Kiiamov,
  • Roman V. Yusupov and
  • Lenar R. Tagirov

Beilstein J. Nanotechnol. 2020, 11, 807–813, doi:10.3762/bjnano.11.65

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  • analysis system. The VN layers were reactively magnetron sputtered from a metallic vanadium target in Ar/N2 plasma, while the Pd1−xFex layers were deposited by co-evaporation of metallic Pd and Fe pellets from calibrated effusion cells in a molecular beam epitaxy chamber. The VN stoichiometry and Pd1−xFex
  • ]. Results and Discussion Sample preparation Single-crystalline MgO(001) (henceforth designated MgO) epi-polished substrates (CRYSTAL GmbH, Germany) with a size of 10 × 5 × 0.5 mm3 were annealed at 800 °C for 5 min in the ultrahigh vacuum (UHV) molecular beam epitaxy (MBE) chamber with a residual pressure
  • ferromagnet with a low coercive field [41]. It is important that magnetic properties of epitaxial Pd1−xFex films are precisely controlled with the iron content x [41], and a perfect cube-on-cube epitaxy is realized with either the MgO(001) substrate or with the superconducting VN layers in any sequence
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Published 15 May 2020

Influence of the epitaxial composition on N-face GaN KOH etch kinetics determined by ICP-OES

  • Markus Tautz,
  • Maren T. Kuchenbrod,
  • Joachim Hertkorn,
  • Robert Weinberger,
  • Martin Welzel,
  • Arno Pfitzner and
  • David Díaz Díaz

Beilstein J. Nanotechnol. 2020, 11, 41–50, doi:10.3762/bjnano.11.4

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  • epitaxy stack. Thin-film technology is a common approach in industry to improve device performance. Thereby, a substrate with higher thermal conductivity, e.g., silicon or nickel, is bonded to the top p-contact of the LED structure [8]. The sapphire substrate is removed by laser lift off (LLO). This
  • allows for higher operating power, which would otherwise lead to device overheating and degradation. After LLO, the N-polar GaN surface previously acting as interface between the sapphire and GaN epitaxy is uncovered on the surface. In addition to IQE the extraction efficiency has to be considered. It
  • ° between GaN and air [13]. In an earlier article, we reviewed the broad range of both material- and process-dependent influences on the etch rate [15]. In particular, growth conditions during epitaxy have been reported to have a strong impact on the etch rate. Material imperfections lower the resistance to
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Published 03 Jan 2020

Kelvin probe force microscopy work function characterization of transition metal oxide crystals under ongoing reduction and oxidation

  • Dominik Wrana,
  • Karol Cieślik,
  • Wojciech Belza,
  • Christian Rodenbücher,
  • Krzysztof Szot and
  • Franciszek Krok

Beilstein J. Nanotechnol. 2019, 10, 1596–1607, doi:10.3762/bjnano.10.155

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  • crystalline TiO and SrTiO3 phases provide important information on the work function values themselves but also on their interaction with air and operation upon elevated temperatures. Experimental We investigated Verneuil-grown epitaxy-ready-polished SrTiO3(100) crystals, provided by the Crystec company. The
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Published 02 Aug 2019

Electroluminescence and current–voltage measurements of single-(In,Ga)N/GaN-nanowire light-emitting diodes in a nanowire ensemble

  • David van Treeck,
  • Johannes Ledig,
  • Gregor Scholz,
  • Jonas Lähnemann,
  • Mattia Musolino,
  • Abbes Tahraoui,
  • Oliver Brandt,
  • Andreas Waag,
  • Henning Riechert and
  • Lutz Geelhaar

Beilstein J. Nanotechnol. 2019, 10, 1177–1187, doi:10.3762/bjnano.10.117

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  • ) behavior of single, freestanding (In,Ga)N/GaN nanowire (NW) light-emitting diodes (LEDs) in an unprocessed, self-assembled ensemble grown by molecular beam epitaxy. The data were acquired in a scanning electron microscope equipped with a micromanipulator and a luminescence detection system. Single NW
  • epitaxy (MBE) on an n-doped Si(111) substrate. They consist of an intrinsic multiple quantum-well structure grown on a Si-doped n-GaN base of about 600 nm length. The active region is composed of four (In,Ga)N insertions with an In content of (20 ± 10)% and a thickness of 3 ± 1 nm. The insertions are
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Published 05 Jun 2019
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