On the mechanism of piezoresistance in nanocrystalline graphite

• Sandeep Kumar,
• Simone Dehm and
• Ralph Krupke

Beilstein J. Nanotechnol. 2024, 15, 376–384, doi:10.3762/bjnano.15.34

• resistance. However, the theoretical modeling shows that the modulation of the transport gap under strain is sensitive to the degree of asymmetry of the grain boundaries. While the symmetric grain boundaries remain metallic in the presence of uniaxial strain, the transport gap of the asymmetric

Controllable physicochemical properties of WO_x thin films grown under glancing angle

• Rupam Mandal,
• Aparajita Mandal,
• Alapan Dutta,
• Rengasamy Sivakumar,
• Sanjeev Kumar Srivastava and
• Tapobrata Som

Beilstein J. Nanotechnol. 2024, 15, 350–359, doi:10.3762/bjnano.15.31

• within the forbidden gap. These states lead to a reduction in bandgap energy and an upward shift of the Fermi level [41][42]. This is the reason behind the observed reduction in bandgap with higher thicknesses (Figure 2b,c) [43]. To probe the Fermi level position, KPFM is a useful tool to acquire

• regarded as an interlayer between the p-Si substrate and the Ag electrode. The glancing angle (87°) growth of a 6 nm film is likely to sustain a large number of metal (Ag)-induced gap states at the NS-WOx/p-Si interface, leading to Fermi level pinning, the degree of pinning being directly related to film

• post-growth annealing in vacuum of NS-WOx/p-Si samples generates an enhanced OV concentration (as observed from the XPS analysis) in the WOx films, which eventually contributes to a higher number of gap states within the film as well as at the WOx/p-Si interface. Since the Fermi level pinning becomes

Investigating structural and electronic properties of neutral zinc clusters: a G₀W₀ and G₀W₀Г₀⁽¹⁾ benchmark

• Sunila Bakhsh,
• Muhammad Khalid,
• Sameen Aslam,
• Muhammad Sohail,
• Muhammad Aamir Iqbal,
• Mujtaba Ikram and
• Kareem Morsy

Beilstein J. Nanotechnol. 2024, 15, 310–316, doi:10.3762/bjnano.15.28

• . The electron affinity is taken as the negative of the LUMO level. The results are presented along with energy gap (Egap) and hardness in Table 1. Our estimated EAs for Zn clusters are close to those obtained by Dai et al. [28], who also predicted high electron affinities of the cluster Zn9. The

• trend, which follows the behavior of metallic bandgaps. One exception is the zinc dimer, for which our bandgap from calculations is relatively high, which may be attributed to the van der Waals forces. The HOMO–LUMO gap trend shows that, at larger sizes, the behavior of the cluster becomes close to

• that of the bulk material, that is, the HOMO–LUMO gap decreases. As seen in Figure 4, the bandgap values obtained from GW calculations are far from the bulk limit of metals. In our work, the HOMO–LUMO gap decreases from ca. 8.5 eV to approximately 3.5 eV, but it is still sizable compared with the bulk

Exploring the relationships between physiochemical properties of nanoparticles and cell damage to combat cancer growth using simple periodic table-based descriptors

• Joyita Roy and
• Kunal Roy

Beilstein J. Nanotechnol. 2024, 15, 297–309, doi:10.3762/bjnano.15.27

• defining the cell damage. On removal of zeta potential as a descriptor, the model quality decreases. Predictions from one model as a descriptor for another model are made to fill the data gap or to determine the missing values. This approach is similar to the imputation methodology, which creates a model

• data gap. Chemical read-across analysis The developed QSPR (PLS) model for dataset 2 provided eight descriptors that were utilized for read-across predictions. Three similarity-based prediction methods, namely Euclidean distance (ED)-based, Gaussian kernel (GK) similarity-based, and Laplacian kernel

Determining by Raman spectroscopy the average thickness and N-layer-specific surface coverages of MoS₂ thin films with domains much smaller than the laser spot size

• Felipe Wasem Klein,
• Jean-Roch Huntzinger,
• Vincent Astié,
• Damien Voiry,
• Romain Parret,
• Houssine Makhlouf,
• Sandrine Juillaguet,
• Jean-Manuel Decams,
• Sylvie Contreras,
• Périne Landois,
• Ahmed-Azmi Zahab,
• Jean-Louis Sauvajol and
• Matthieu Paillet

Beilstein J. Nanotechnol. 2024, 15, 279–296, doi:10.3762/bjnano.15.26

• dependence of the A2D(Si)/A0(Si) ratio, its dependence on SiO2 thickness combined with experimental errors lead to the conclusion that the measured values for N and N + 1 can overlap for any N if the SiO2 thickness is not known with good accuracy. For a given SiO2 thickness, the gap between the A2D(Si)/A0(Si

• would be close in twisted and 2Hc-stacked MoS2 multilayers. However, as previously recalled, the sensitivity of this ratio to the SiO2 thickness and the gap between the A2D(Si)/A0(Si) ratios for N and N + 1 permit to ensure the determination of N with a rather good reliability only for N ≤ 5. DLI-PP-CVD

Design, fabrication, and characterization of kinetic-inductive force sensors for scanning probe applications

• August K. Roos,
• Ermes Scarano,
• Elisabet K. Arvidsson,
• Erik Holmgren and
• David B. Haviland

Beilstein J. Nanotechnol. 2024, 15, 242–255, doi:10.3762/bjnano.15.23

• less than the London penetration depth to the normal-state sheet resistance R□ and the superconducting energy gap Δ0. For a conductor of length ℓ and width w, the kinetic inductance is where Lk,□ is the kinetic inductance per square. From Equation 4, we require a superconducting film with large normal

• -ion etch (RIE) process in a Plasmapro 100 ICP300 from Oxford Instruments, with an etch rate of roughly 8 nm/min. (e) Fine circuit pattern. Electron-beam lithography defines the finer structures, such as the meandering nanowire inductor, the shunt inductor, and the interdigital gap of the capacitor. We

• temperature Tc = 9.6 K, from which we estimate the superconducting energy gap with the BCS relation Δ0 = 1.76kBTc = 1.46 meV. Using Equation 4, we find a kinetic inductance per square Lk,□ = 35 pH/□ for the 200 nm wide nanowires, corresponding to a kinetic inductance per unit length Lk/ℓ = 175 pH/μm. We

Exploring disorder correlations in superconducting systems: spectroscopic insights and matrix element effects

• Vyacheslav D. Neverov,
• Alexander E. Lukyanov,
• Andrey V. Krasavin,
• Alexei Vagov,
• Boris G. Lvov and
• Mihail D. Croitoru

Beilstein J. Nanotechnol. 2024, 15, 199–206, doi:10.3762/bjnano.15.19

• disordered amorphous superconductors [50] revealed that in the regime of superconductor–insulator transition the superconducting gap is stable, whereas the coherence peaks in the single-particle density of states (DOS) disappear. Following this observation, it was suggested that the system exhibits

• analysis. The quasi-particle DOS is determined by the following expression: This quantity is ensemble-averaged over various realizations of the disorder potential, as illustrated in Figure 1 for three specific values of the correlation degree, α = 0, 1, and 2. The figure clearly indicates that both the gap

• and the two coherence peaks at its edges depend on α. Notably, the gap exhibits a discernible reduction with increasing α. In the case of uncorrelated disorder with α = 0, the gap is approximately 80% larger compared to the scenario with α = 2. Simultaneously, the coherence peaks gradually vanish with

CdSe/ZnS quantum dots as a booster in the active layer of distributed ternary organic photovoltaics

• Gabriela Lewińska,
• Piotr Jeleń,
• Zofia Kucia,
• Maciej Sitarz,
• Łukasz Walczak,
• Bartłomiej Szafraniak,
• Jerzy Sanetra and
• Konstanty W. Marszalek

Beilstein J. Nanotechnol. 2024, 15, 144–156, doi:10.3762/bjnano.15.14

• -transporting layers [24], active absorbing layers, and other components [25][26]. Inorganic quantum dots are considered substitutes for fullerene acceptors. Their biggest advantages are a tunable band gap, various absorption spectra, and comparatively high mobility of carriers [27][28]. The application of

• : The imaginary part function is described by: where Eg is the band gap of the material, E0 is the peak in the joint density of states, Θ is the Heaviside theta function, Γ is the broadening parameter, and A is a prefactor. The refractive indices and extinction coefficients as functions of the

• , QD520, QD580, QD600, and QD640, respectively. According to Hummon et al. [52] the CdSe valence-band edge was determined to be −6.8 eV, from thin-film UPS and photoluminescence measurements. The CdSe conduction-band edge was determined by the photonic band gap (2.0–4.8 eV). The valence- and conduction

Assessing phytotoxicity and tolerance levels of ZnO nanoparticles on Raphanus sativus: implications for widespread adoptions

• Pathirannahalage Sahan Samuditha,
• Nadeesh Madusanka Adassooriya and
• Nazeera Salim

Beilstein J. Nanotechnol. 2024, 15, 115–125, doi:10.3762/bjnano.15.11

• in the main band gap of ZnO, Zn 3d→O 2p [20]. The larger average diameter (122.4 nm) than that of the SEM images (70 nm) is due to the fact that particles in solutions are generally larger than those directly seen via microscopy techniques [33]. The increased average diameter and polydispersity index

Josephson dynamics and Shapiro steps at high transmissions: current bias regime

• Artem V. Galaktionov and
• Andrei D. Zaikin

Beilstein J. Nanotechnol. 2024, 15, 51–56, doi:10.3762/bjnano.15.5

• junctions, this phenomenological model can be microscopically justified only at temperatures in the vicinity of the critical temperature Tc. As one goes away from Tc, the number of quasiparticles above the superconducting gap decreases exponentially and, hence, no dissipative currents at subgap voltages and

Measurements of dichroic bow-tie antenna arrays with integrated cold-electron bolometers using YBCO oscillators

• Leonid S. Revin,
• Dmitry A. Pimanov,
• Alexander V. Chiginev,
• Anton V. Blagodatkin,
• Viktor O. Zbrozhek,
• Andrey V. Samartsev,
• Anastasia N. Orlova,
• Dmitry V. Masterov,
• Alexey E. Parafin,
• Victoria Yu. Safonova,
• Anna V. Gordeeva,
• Andrey L. Pankratov,
• Leonid S. Kuzmin,
• Anatolie S. Sidorenko,
• Silvia Masi and
• Paolo de Bernardis

Beilstein J. Nanotechnol. 2024, 15, 26–36, doi:10.3762/bjnano.15.3

• ] (Figure 1a). The basic element of the receiving matrix is a dipole bow-tie antenna, in the gap of which the CEB is embedded (Figure 1b). This matrix is located on a silicon substrate, which is 260 µm thick. Since the operation of the CEB in the matrix is assumed to be in the voltage bias mode, the

TEM sample preparation of lithographically patterned permalloy nanostructures on silicon nitride membranes

• Joshua Williams,
• Michael I. Faley,
• Joseph Vimal Vas,
• Peng-Han Lu and
• Rafal E. Dunin-Borkowski

Beilstein J. Nanotechnol. 2024, 15, 1–12, doi:10.3762/bjnano.15.1

• . Alignment of the stencil mask in a flip-chip configuration with the sample under clean room conditions prior to metal deposition plays an important role as a single dust particle can increase the gap between the mask and the sample up to about 100-fold, thereby increasing the shadowing effect greatly. KOH

A bifunctional superconducting cell as flux qubit and neuron

• Dmitrii S. Pashin,
• Pavel V. Pikunov,
• Marina V. Bastrakova,
• Andrey E. Schegolev,
• Nikolay V. Klenov and
• Igor I. Soloviev

Beilstein J. Nanotechnol. 2023, 14, 1116–1126, doi:10.3762/bjnano.14.92

• example, for the parameters l = 2 and D = 0.001, corresponding to the adiabatic control region with symmetric magnetic flux (see Figure 2c), the energy gap between ground and first excited states attains its minimum value equal to during increase and decrease of the external flux (the common form of the

Dual-heterodyne Kelvin probe force microscopy

• Benjamin Grévin,
• Fatima Husainy,
• Dmitry Aldakov and
• Cyril Aumaître

Beilstein J. Nanotechnol. 2023, 14, 1068–1084, doi:10.3762/bjnano.14.88

• confinement in the vertical direction and their smooth surfaces with atomic thickness control, very precise control over the optical gap and exciton energy of NSs can be achieved through chemical synthesis, making them very interesting

Isolation of cubic Si₃P₄ in the form of nanocrystals

• Polina K. Nikiforova,
• Sergei S. Bubenov,
• Vadim B. Platonov,
• Andrey S. Kumskov,
• Nikolay N. Kononov,
• Tatyana A. Kuznetsova and
• Sergey G. Dorofeev

Beilstein J. Nanotechnol. 2023, 14, 971–979, doi:10.3762/bjnano.14.80

• disordered semiconductor material would be to find the energy at which the attenuation coefficient exceeds 104 cm−1 (the optical gap estimated this way amounts to 2.3 eV). All of these observations disprove earlier theoretical assumptions of defective zinc blende Si3P4 as being a narrow-bandgap semiconductor

Antibody-conjugated nanoparticles for target-specific drug delivery of chemotherapeutics

• Mamta Kumari,
• Amitabha Acharya and
• Praveen Thaggikuppe Krishnamurthy

Beilstein J. Nanotechnol. 2023, 14, 912–926, doi:10.3762/bjnano.14.75

• that 13 targeted NPs had been progressed into clinical trials in 2013; however, their therapeutic efficacy in humans has not been proven yet [123]. The available literature portrays a picture of a potential translational gap between preclinical and clinical studies. So far, no ACNPs have been approved

Industrial perspectives for personalized microneedles

• Remmi Danae Baker-Sediako,
• Benjamin Richter,
• Matthias Blaicher,
• Michael Thiel and
• Martin Hermatschweiler

Beilstein J. Nanotechnol. 2023, 14, 857–864, doi:10.3762/bjnano.14.70

• printers (e.g., Nanoscribe Quantum X platforms) producing polymer masters. The increased scan speed and throughput are the result of new supporting technologies coming to market, such as replacing piezoelectric stages with galvanometric mirrors. These new technologies continue to decrease the gap in

Biomimetics on the micro- and nanoscale – The 25th anniversary of the lotus effect

• Matthias Mail,
• Kerstin Koch,
• Thomas Speck,
• William M. Megill and
• Stanislav N. Gorb

Beilstein J. Nanotechnol. 2023, 14, 850–856, doi:10.3762/bjnano.14.69

• material through a few steps. In the first step, a molten polypropylene layer is laminated onto a carrier film and run over rollers to cool down. Then the combined laminate is forced through a gap between a hot sandblasted roller and a cold smooth one. The surface roughness and temperature difference

• create the hairy structured surface on the polypropylene side. In the final step, the structured film is separated from the carrier. The authors were able to set the hair length and density with the usual industrial control variables of speed, temperature, and gap width. The obtained result was a very

Control of morphology and crystallinity of CNTs in flame synthesis with one-dimensional reaction zone

• Muhammad Hilmi Ibrahim,
• Norikhwan Hamzah,
• Mohd Zamri Mohd Yusop,
• Ni Luh Wulan Septiani and
• Mohd Fairus Mohd Yasin

Beilstein J. Nanotechnol. 2023, 14, 741–750, doi:10.3762/bjnano.14.61

• the size histograms. Figure 3a and Figure 3b show the temperatures and CNT diameter distributions for methane diffusion flame and premixed flame, respectively. For the diffusion flame synthesis, a clear gap in the average temperature of around 100 °C is observed for the CNT growth regions below and

Cross-sectional Kelvin probe force microscopy on III–V epitaxial multilayer stacks: challenges and perspectives

• Mattia da Lisca,
• José Alvarez,
• James P. Connolly,
• Nicolas Vaissiere,
• Karim Mekhazni,
• Jean Decobert and
• Jean-Paul Kleider

Beilstein J. Nanotechnol. 2023, 14, 725–737, doi:10.3762/bjnano.14.59

• is set at mid-gap, whereas it is moved towards the valence (conduction) band if the ratio of acceptor to donor DOS is larger (smaller) than 1 [24]. Results KPFM cross-sectional investigation under dark conditions The cross section of the sample was first investigated by KPFM under dark conditions

• growth processes. The InP:nid layers fabricated at III–V Lab usually present an intrinsic n-type doping of the order of 1015 cm−3, which results in shallow donor energy levels within the energy gap. Since the intentional Zn p-type doping concentration is much greater than this residual n-type doping

• reported in Figure 6. In this specific case, the charge neutrality level of surface defects is set at mid-gap. Thus, increasing the surface defect densities will produce a pinning of the Fermi level at the neutrality level of the surface states and the energy of valence and conduction bands will appear

Humidity-dependent electrical performance of CuO nanowire networks studied by electrochemical impedance spectroscopy

• Jelena Kosmaca,
• Juris Katkevics,
• Jana Andzane,
• Raitis Sondors,
• Liga Jasulaneca,
• Raimonds Meija,
• Kiryl Niherysh,
• Yelyzaveta Rublova and
• Donats Erts

Beilstein J. Nanotechnol. 2023, 14, 683–691, doi:10.3762/bjnano.14.54

• interconnects, the distance between the metallic microelectrodes was varied from 2 to 8 µm [26]. The arrays of microelectrode pairs with different gap distances were grouped in four rows on a chip (Figure 1b). The dielectrophoretically aligned nanowires connected the gaps between pairs of microelectrodes

• the gap (Figure 1d); however, the electrical signal was assumed to come from the CuO nanowire bundles interconnecting the electrodes. Examples of impedance spectra of the CuO networks interconnecting the metal electrodes are shown in Figure 2. Figure 2a shows Nyquist plots measured for variable

• the nanowire bundle sizes and electrode gap distances, average electrochemical cell widths of 20 µm, cell heights of 1.1 µm and cell lengths of 7.2 µm were estimated. Numerical values for equivalent circuit parameters from fitting the experimental data were calculated per unit area considering the

Metal-organic framework-based nanomaterials as opto-electrochemical sensors for the detection of antibiotics and hormones: A review

• Akeem Adeyemi Oladipo,
• Saba Derakhshan Oskouei and
• Mustafa Gazi

Beilstein J. Nanotechnol. 2023, 14, 631–673, doi:10.3762/bjnano.14.52

• accessible states of the metal ions in the framework versus the HOMO–LUMO gap of the organic ligand(s), all have an impact on the emission that results from MOFs. Metal-based luminescence: The incorporation of lanthanide elements into the MOF structure results in the most frequent occurrence of metal-based

Thermal transport in kinked nanowires through simulation

• Alexander N. Robillard,
• Graham W. Gibson and
• Ralf Meyer

Beilstein J. Nanotechnol. 2023, 14, 586–602, doi:10.3762/bjnano.14.49

• solutions of the heat equation serves to better bridge the gap between heat transport phenomena at the macro- and the microscale and shows that multiple factors are significant in kinked systems beyond disruption of ballistic paths, including lattice orientation and phonon reflections. Results and

Observation of multiple bulk bound states in the continuum modes in a photonic crystal cavity

• Rui Chen,
• Yi Zheng,
• Xingyu Huang,
• Qiaoling Lin,
• Chaochao Ye,
• Meng Xiong,
• Martijn Wubs,
• Yungui Ma,
• Minhao Pu and
• Sanshui Xiao

Beilstein J. Nanotechnol. 2023, 14, 544–551, doi:10.3762/bjnano.14.45

• regions A and B presented in Figure 2b indicate that the energy of the BIC structures in region A is embedded in the bandgap of region B, thus suppressing in-plane leakage. A transition region with a gap (g = 760 nm) between region A and region B is introduced to compensate the momentum mismatch at the

Nanoarchitectonics to entrap living cells in silica-based systems: encapsulations with yolk–shell and sepiolite nanomaterials

• Celia Martín-Morales,
• Jorge Fernández-Méndez,
• Pilar Aranda and
• Eduardo Ruiz-Hitzky

Beilstein J. Nanotechnol. 2023, 14, 522–534, doi:10.3762/bjnano.14.43

• easily observable. This indicates that the cyanobacteria encapsulated in yolk–shell microstructures, instead of being directly attached to an inorganic surface, are floating separated by a space between cell wall and silica shell. This gap is crucial to alleviate the previously observed stress