Investigating ripple pattern formation and damage profiles in Si and Ge induced by 100 keV Ar⁺ ion beam: a comparative study

• Indra Sulania,
• Harpreet Sondhi,
• Tanuj Kumar,
• Sunil Ojha,
• G R Umapathy,
• Ambuj Mishra,
• Ambuj Tripathi,
• Richa Krishna,
• Devesh Kumar Avasthi and
• Yogendra Kumar Mishra

Beilstein J. Nanotechnol. 2024, 15, 367–375, doi:10.3762/bjnano.15.33

• or range of damage profiles. Single-crystal materials (e.g. silicon and germanium) are composed of ordered arrays of atoms. If an ion beam is aligned to the atomic planes, most of the ions pass through the interplanar space and penetrate deep into the crystal. This can be used in channelling studies

Density functional theory study of Au-fcc/Ge and Au-hcp/Ge interfaces

• Olga Sikora,
• Małgorzata Sternik,
• Benedykt R. Jany,
• Franciszek Krok,
• Przemysław Piekarz and
• Andrzej M. Oleś

Beilstein J. Nanotechnol. 2023, 14, 1093–1105, doi:10.3762/bjnano.14.90

• , stable hcp nanoislands were obtained under controlled annealing conditions on the germanium substrate [23]. After initial crystallization of the fcc gold phase, the hcp phase grows from the eutectic Au/Ge liquid. The atomically resolved STEM-HAADF measurements as well as electron backscatter diffraction

• provide surface energy details for gold and germanium crystals and the charge density differences for the Au/Ge heterostructures. Methodology Interfacial energy and the work of separation in DFT calculations In contrast to the bulk phase of a material, the surface atoms have an incomplete set of neighbors

• eV·Å−1, respectively. In all calculations, the starting configurations (Au/Ge supercells, bulk structures and isolated slabs) were prepared under the assumption that the lateral extent of the gold fraction of the heterostructures matches the optimized dimensions of the germanium lattice, treated here

In situ magnesiothermic reduction synthesis of a Ge@C composite for high-performance lithium-ion batterie anodes

• Ha Tran Huu,
• Ngoc Phi Nguyen,
• Vuong Hoang Ngo,
• Huy Hoang Luc,
• Minh Kha Le,
• Minh Thu Nguyen,
• My Loan Phung Le,
• Hye Rim Kim,
• In Young Kim,
• Sung Jin Kim,
• Van Man Tran and
• Vien Vo

Beilstein J. Nanotechnol. 2023, 14, 751–761, doi:10.3762/bjnano.14.62

• systems have become the most popular energy storage systems, with applications from mobile devices to EVs and grid-scale storage [8][9]. However, the low specific theoretical capacity of graphite limits the energy density of the commercial LIBs [10][11][12][13]. Germanium, as a lithium alloying material

• Chemicals The chemicals, including germanium oxide (GeO2) (99.99%) from Sigma-Aldrich and hydrochloric acid (HCl) (35–37%), magnesium powder (Mg) (99.95%), ethanol (C2H5OH) (99.5%), and potassium hydroxide (KOH) (85%) from Xilong, China, were used without further purification. Banana peels were collected

• mixture of germanium dioxide, magnesium, and activated carbon at a mass ratio of 5:4:10, was ground well and transferred into a ceramic crucible. The solid was heated to 750 °C under Ar gas flow for 3 h. The obtained powder was rinsed with 1 M HCl to remove by-products. The sample, obtained after rinsing

Thermal transport in kinked nanowires through simulation

• Alexander N. Robillard,
• Graham W. Gibson and
• Ralf Meyer

Beilstein J. Nanotechnol. 2023, 14, 586–602, doi:10.3762/bjnano.14.49

• parameters for silicon given by Jean et al. [28] in their work on simulations of nanoporous silicon and germanium. In that work, an isotropic model based on a parabolic fit is used for the description of the dispersion relations of the acoustic phonons. Since we are not attempting to obtain exact

A mid-infrared focusing grating coupler with a single circular arc element based on germanium on silicon

• Xiaojun Zhu,
• Shuai Li,
• Ang Sun,
• Yongquan Pan,
• Wen Liu,
• Yue Wu,
• Guoan Zhang and
• Yuechun Shi

Beilstein J. Nanotechnol. 2023, 14, 478–484, doi:10.3762/bjnano.14.38

• , Nanjing University, Nanjing 210093, China 10.3762/bjnano.14.38 Abstract A mid-infrared (MIR) focusing grating coupler (FGC) with a single circular arc element (CAE) in the front of the gratings based on a germanium-on-silicon (Ge-on-Si) platform is designed and demonstrated. It can be used equivalently

• couplers requiring secondary etching, the proposed full-etch grating coupler structure can reduce the complexity of fabrication and can provide a prospective platform for MIR photonic integration and photonic biosensor detection. Keywords: circular arc element; focusing grating coupler; germanium-on

• is called “fingerprint spectrum region” (FSR) [1][4]. Many small biological molecules have unique and identifiable absorption spectra in the MIR band of 6–15 μm [1][5]. It is of great application value to develop photonic biosensors in this FSR. The spectral transparency window of germanium can fully

Mixed oxides with corundum-type structure obtained from recycling can seals as paint pigments: color stability

• Dienifer F. L. Horsth,
• Julia de O. Primo,
• Nayara Balaba,
• Fauze J. Anaissi and
• Carla Bittencourt

Beilstein J. Nanotechnol. 2023, 14, 467–477, doi:10.3762/bjnano.14.37

• , USA), equipped with optical fiber, tungsten halogen source, and silicon (350–720 nm) and germanium (720–1050 nm) detectors. The colorimetric analysis was performed on the pigments in the form of powder, and after application on the plaster specimens using a portable colorimeter (3nh, model NR60CP

Electrostatic pull-in application in flexible devices: A review

• Teng Cai,
• Yuming Fang,
• Yingli Fang,
• Ruozhou Li,
• Ying Yu and
• Mingyang Huang

Beilstein J. Nanotechnol. 2022, 13, 390–403, doi:10.3762/bjnano.13.32

• electrode materials include CNTs, GR, and silicon/germanium nanowires. CNT-NEM switches CNTs are an ideal flexible material for NEM electrodes because of the high aspect ratio, current density, and excellent tensile strength. In 2000, Rueckes et al. [13] observed the electromechanical conversion in CNTs for

Chemical vapor deposition of germanium-rich CrGe_x nanowires

• Vladislav Dřínek,
• Stanislav Tiagulskyi,
• Roman Yatskiv,
• Jan Grym,
• Radek Fajgar,
• Věra Jandová,
• Martin Koštejn and
• Jaroslav Kupčík

Beilstein J. Nanotechnol. 2021, 12, 1365–1371, doi:10.3762/bjnano.12.100

• -resolution transmission electron microscopy, scanning electron microscopy, electron dispersive X-ray analysis, selected area electron diffraction, and X-ray photoelectron spectroscopy, showed that unlike nanoballs and particles composed of crystalline germanium, the layer was made of chromium germanide CrGex

• . The nanowires possessed a complex structure, namely a thin crystalline germanium core and amorphous CrGex coating. The composition of the nanowire coating was [Cr]/[Ge] = 1:(6–7). The resistance of the nanowire–deposit system was estimated to be 2.7 kΩ·cm using an unique vacuum contacting system

• chromium silicide/germanide. CrSix has been described in tens of publications and at least some properties of it are known and classified. However, only few CrGex publications have been published so far. Although silicon and germanium as representatives of group-IV elements possess similar physicochemical

Molecular assemblies on surfaces: towards physical and electronic decoupling of organic molecules

• Sabine Maier and
• Meike Stöhr

Beilstein J. Nanotechnol. 2021, 12, 950–956, doi:10.3762/bjnano.12.71

• ][30][31][32]. Additional concepts to weaken adsorbate–surface interactions involve the post-deposition intercalation of atomic species such as iodine [33]. For semiconductors, for example, bare silicon or germanium, electronic decoupling of molecules can be achieved by either the growth of ultrathin

Spontaneous shape transition of Mn_xGe_1−x islands to long nanowires

• S. Javad Rezvani,
• Luc Favre,
• Gabriele Giuli,
• Yiming Wubulikasimu,
• Isabelle Berbezier,
• Augusto Marcelli,
• Luca Boarino and
• Nicola Pinto

Beilstein J. Nanotechnol. 2021, 12, 366–374, doi:10.3762/bjnano.12.30

• the wires. For instance, Au, generally used as catalyst for the growth of various semiconductor NWs, acts as a deep-level trap in germanium bulk and NWs, modifying the electronic transport properties [5]. Strain-induced elongation is a mechanism [34] that can lead to either epitaxial or endotaxial

Extended iron phthalocyanine islands self-assembled on a Ge(001):H surface

• Rafal Zuzak,
• Marek Szymonski and
• Szymon Godlewski

Beilstein J. Nanotechnol. 2021, 12, 232–241, doi:10.3762/bjnano.12.19

• analysis of single FePc molecules trapped at surface defects indicates that the molecules stay intact upon adsorption and can be manipulated away from surface defects onto a perfectly hydrogenated surface. This allows for their isolation from the germanium surface. Keywords: hydrogenated semiconductor

• from the influence of the underlying germanium by the passivating hydrogen layer. This is in line with previous reports showing that other organic compounds are well decoupled from the surface by hydrogen, unless they are contacted with the underlying semiconductor through atomic-scale defects, that is

• or the ligands are recorded [24]. The above findings indicate that the FePc molecules stay intact upon deposition on the Ge(001):H surface and that they are decoupled from the germanium substrate by the passivating hydrogen layer. Moreover, the manipulation event allows for the identification of the

Analysis of catalyst surface wetting: the early stage of epitaxial germanium nanowire growth

• Owen C. Ernst,
• Felix Lange,
• David Uebel,
• Thomas Teubner and
• Torsten Boeck

Beilstein J. Nanotechnol. 2020, 11, 1371–1380, doi:10.3762/bjnano.11.121

• grow germanium nanowires on different substrates is described. Keywords: dewetting; germanium; interfacial energy; Laplace pressure; nanostructure; nanowire; Ostwald ripening; wetting layer; Introduction Wetting phenomena as well as the formation and movement of droplets are essential for numerous

• chalcopyrites [11], or precursors for complex structures, such as nanowires [12]. Silicon, germanium and silicon oxide nanowires, for example, can be formed on different substrates by using metal catalysts in the form of tin, indium or gold nanodroplets [13][14][15]. Such nanometre-sized one-dimensional

• electron microscopy (TEM) images of gold particles formed on a silicon substrate at room temperature. Small gold clusters (<10 nm) are also seen between the droplets. Growth of germanium nanowires Figure 4 shows images of the resulting gold droplets on various substrates and the results after deposition of

Hexagonal boron nitride: a review of the emerging material platform for single-photon sources and the spin–photon interface

• Stefania Castelletto,
• Faraz A. Inam,
• Shin-ichiro Sato and
• Alberto Boretti

Beilstein J. Nanotechnol. 2020, 11, 740–769, doi:10.3762/bjnano.11.61

• spin–photon interfaces for remote spin–photon entanglement with available nuclear spins as ancilla qubits for quantum memory [11][12]. These include the nitrogen-vacancy (NV) center in diamond [13], the silicon-vacancy center in diamond [14][15][16], the germanium-vacancy center in diamond [17], the

Interaction of Te and Se interlayers with Ag or Au nanofilms in sandwich structures

• Arkadiusz Ciesielski,
• Lukasz Skowronski,
• Marek Trzcinski,
• Ewa Górecka,
• Wojciech Pacuski and
• Tomasz Szoplik

Beilstein J. Nanotechnol. 2019, 10, 238–246, doi:10.3762/bjnano.10.22

• ], enhanced abrasive properties of metal films [9] as well as effects like charge transport anisotropy [10] and giant magneto-optical Kerr response [11]. We have recently shown that depositing silver with an ultrathin germanium interlayer alters the density profile of the silver film [12]. Among the most

• migration of the sublayer atoms inside a plasmonic layer was first discovered by Majni et al. [22], as the interdiffusion process of Au and Cr films deposited on silicon substrates. Ten years later, Wachs et al. [23] showed that when silver layers are deposited on top of germanium, Ge atoms migrate through

• results) or at least the greatest at the middle of it. This is not the case since there is a profound dip after 6–7 minutes of etching. This indicates that tellurium has indeed segregated (and not diffused) into the silver structure. However, unlike germanium, which segregates only towards the surface of

Study of silica-based intrinsically emitting nanoparticles produced by an excimer laser

• Imène Reghioua,
• Mattia Fanetti,
• Sylvain Girard,
• Diego Di Francesca,
• Simonpietro Agnello,
• Layla Martin-Samos,
• Marco Cannas,
• Matjaz Valant,
• Melanie Raine,
• Marc Gaillardin,
• Nicolas Richard,
• Philippe Paillet,
• Aziz Boukenter,
• Youcef Ouerdane and
• Antonino Alessi

Beilstein J. Nanotechnol. 2019, 10, 211–221, doi:10.3762/bjnano.10.19

• microscopy (SEM) and cathodoluminescence (CL) investigations revealed a good correspondence between the morphology of the generated particles and their emission signal due to the germanium lone pair center (GLPC), regardless of the energy per pulse used for their production. This suggests a reasonable

• in the glass network and the addition of Ge decreases the silica band gap [18][21][22][23]. The presence of Ge is associated with the appearance of new structures of optically active point defects such as the so-called germanium lone pair center (GLPC) [19][24]. This defect is responsible for an

Biomimetic surface structures in steel fabricated with femtosecond laser pulses: influence of laser rescanning on morphology and wettability

• Camilo Florian Baron,
• Alexandros Mimidis,
• Daniel Puerto,
• Evangelos Skoulas,
• Emmanuel Stratakis,
• Javier Solis and
• Jan Siegel

Beilstein J. Nanotechnol. 2018, 9, 2802–2812, doi:10.3762/bjnano.9.262

• influences the surface energy and thus the wetting behavior [5][6][7][8][9][10]. A particular kind of controllable surface modification induced by pulsed lasers was discovered in 1965 by Milton Birnbaum [11] – upon irradiation of a germanium wafer with multiple laser pulses, self-organized periodic surface

Variation of the photoluminescence spectrum of InAs/GaAs heterostructures grown by ion-beam deposition

• Alexander S. Pashchenko,
• Leonid S. Lunin,
• Eleonora M. Danilina and
• Sergei N. Chebotarev

Beilstein J. Nanotechnol. 2018, 9, 2794–2801, doi:10.3762/bjnano.9.261

• 90 and 300 K in the spectral range from 0.9 to 1.4 eV. An injection laser with 402 nm wavelength and power of 12.5 mW was used as a source of excitation optical radiation. The PL signal was recorded by an MDR-23 monochromator with a cooled germanium photodiode PDG-3600. Protection of the

Silicene, germanene and other group IV 2D materials

• Patrick Vogt

Beilstein J. Nanotechnol. 2018, 9, 2665–2667, doi:10.3762/bjnano.9.248

• methods. The synthesis of germanene (2D germanium) was reported in 2014 [4] and the synthesis of stanene (2D tin) in 2016 [5]. Except for their 2D character, these materials are substantially different from prototypical graphene. First of all, these materials do not exist in nature, nor do their 3D

Metal–dielectric hybrid nanoantennas for efficient frequency conversion at the anapole mode

• Valerio F. Gili,
• Lavinia Ghirardini,
• Davide Rocco,
• Giuseppe Marino,
• Ivan Favero,
• Iännis Roland,
• Giovanni Pellegrini,
• Lamberto Duò,
• Marco Finazzi,
• Luca Carletti,
• Andrea Locatelli,
• Aristide Lemaître,
• Dragomir Neshev,
• Costantino De Angelis,
• Giuseppe Leo and
• Michele Celebrano

Beilstein J. Nanotechnol. 2018, 9, 2306–2314, doi:10.3762/bjnano.9.215

• . Even higher THG efficiency enhancement has been recently achieved in germanium nanodisks thanks to the excitation of the so-called anapole mode (from the ancient Greek “without any pole”) [19]. As the name suggests, the anapole mode consists in the superposition of a toroidal dipole (TD) and an

Lead-free hybrid perovskites for photovoltaics

• Oleksandr Stroyuk

Beilstein J. Nanotechnol. 2018, 9, 2209–2235, doi:10.3762/bjnano.9.207

• solar cell displaying PCEs of up to 0.55% [109]. The mixed CsSnI2.95F0.05 was successfully tested as an efficient HTL for dye-sensitized solar cells operating with PCEs of up to ≈10% [138]. Other M2+-based hybrid perovskites Germanium(II) forms a series of perovskites isostructural to MAPI with a

• ) cation C6H5(CH2)2NH3+, a layered structure can be formed with inorganic germanium iodide layers separated by organic PEA layers (Figure 9c) [143]. The (PEA)2GeI4 HP revealed a direct bandgap of 2.12 eV making it suitable for tandem solar cells. This layered perovskite was also found to be much more

Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates

• Noel Kennedy,
• Ray Duffy,
• Luke Eaton,
• Dan O’Connell,
• Scott Monaghan,
• Shane Garvey,
• James Connolly,
• Chris Hatem,
• Justin D. Holmes and
• Brenda Long

Beilstein J. Nanotechnol. 2018, 9, 2106–2113, doi:10.3762/bjnano.9.199

• ][8], germanium [9][10][11] and others [12]. MLD involves the use of surface chemistry to provide a source of dopant atoms for diffusion into the substrate. Figure 1 shows a schematic version of the steps involved in a MLD process. The most commonly used reaction involves the hydrosilylation of an

A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si_1−xGe_x and Si layers

• Richard Daubriac,
• Emmanuel Scheid,
• Hiba Rizk,
• Richard Monflier,
• Sylvain Joblot,
• Rémi Beneyton,
• Pablo Acosta Alba,
• Sébastien Kerdilès and
• Filadelfo Cristiano

Beilstein J. Nanotechnol. 2018, 9, 1926–1939, doi:10.3762/bjnano.9.184

• . The results are shown in Figure 2, where we compare the removed thickness as a function of the etching time for two 20 nm boron-doped (1019 cm−3) Si1−xGex samples with different germanium content : x = 0.22 and x = 0.30. For etching times less than 15 min, the etch rate is perfectly linear and

Computational exploration of two-dimensional silicon diarsenide and germanium arsenide for photovoltaic applications

• Sri Kasi Matta,
• Chunmei Zhang,
• Yalong Jiao,
• Anthony O'Mullane and
• Aijun Du

Beilstein J. Nanotechnol. 2018, 9, 1247–1253, doi:10.3762/bjnano.9.116

• ]. However, they did not report the band structure or the band gap values of these materials. Later, Wu et al. performed theoretical studies on silicon and germanium arsenides [9] to predict and reaffirm that m-SiAs/GeAs and o-SiAs2/GeAs2 are indeed semiconductors. The studies were based on band-structure

• various electronic applications. Crystal structure side view of (a) SiAs2 bulk (3 × 2 super cells) and (b) GeAs2 bulk (red: silicon, blue: germanium, green: arsenic). Phonon band structure of a monolayer of (a) SiAs2 and (b) GeAs2 along the high-symmetry points in the 1st Brillouin zone. (c) Energy of

Engineering of oriented carbon nanotubes in composite materials

• Razieh Beigmoradi,
• Abdolreza Samimi and
• Davod Mohebbi-Kalhori

Beilstein J. Nanotechnol. 2018, 9, 415–435, doi:10.3762/bjnano.9.41

• the CNT structure by adding compounds. It is very difficult to get a good FTIR spectrum of CNTs, thus attenuated total reflection (ATR) FTIR can be used (except with carbon crystal, when germanium is more suitable). The investigation of the intermolecular interaction between the polymer chain and CNT

Review: Electrostatically actuated nanobeam-based nanoelectromechanical switches – materials solutions and operational conditions

• Liga Jasulaneca,
• Jelena Kosmaca,
• Raimonds Meija,
• Jana Andzane and
• Donats Erts

Beilstein J. Nanotechnol. 2018, 9, 271–300, doi:10.3762/bjnano.9.29

• . Semiconductors Silicon and germanium: Both Si and Ge have a long history as semiconductor device materials. Comparable relatively high Young’s moduli (Si, 130–188 GPa [129] and Ge, 103–150 GPa) [130][131] make these materials useful for applications in NEM devices. Due to the possibility of anisotropic etching