The influence of an interfacial hBN layer on the fluorescence of an organic molecule

• Christine Brülke,
• Oliver Bauer and
• Moritz M. Sokolowski

Beilstein J. Nanotechnol. 2020, 11, 1663–1684, doi:10.3762/bjnano.11.149

• pumped cw semiconductor laser (Coherent Sapphire LP UBB CDRH) with a wavelength of 458 nm (photon energy of 2.698 eV or 21,816 cm−1) and P = 50 mW. To block the laser light from entering the spectrometer, a long-pass filter (cut-off at 475 nm) was positioned in front of the entrance slit of the

High-responsivity hybrid α-Ag₂S/Si photodetector prepared by pulsed laser ablation in liquid

• Raid A. Ismail,
• Hanan A. Rawdhan and
• Duha S. Ahmed

Beilstein J. Nanotechnol. 2020, 11, 1596–1607, doi:10.3762/bjnano.11.142

• Tu and Tu with CTAB was calculated by using a Tauc plot. As shown in Figure 5b, the extrapolation of the linear part of the curve to the photon energy axis produces the optical energy gap. The energy gap of Ag2S NPs synthesized in Tu and Tu with CTAB was 1.5 and 2 eV, respectively. The energy gap was

• . Inset is the Raman spectrum of thiourea solution. (a) Optical absorption of Ag2S prepared with and without CTAB, (b) (αhν)2 versus photon energy plot. TEM images of Ag2S NPs synthesized (a) without CTAB and (b) with CTAB surfactant. FTIR spectra of Ag2S NPs prepared without and with CTAB. SEM images of

Controlling the electronic and physical coupling on dielectric thin films

• Philipp Hurdax,
• Michael Hollerer,
• Larissa Egger,
• Georg Koller,
• Xiaosheng Yang,
• Anja Haags,
• Serguei Soubatch,
• Frank Stefan Tautz,
• Mathias Richter,
• Alexander Gottwald,
• Peter Puschnig,
• Martin Sterrer and
• Michael G. Ramsey

Beilstein J. Nanotechnol. 2020, 11, 1492–1503, doi:10.3762/bjnano.11.132

• (c). (d) Multilayer 6P islands, Tdep,6P = 30 °C, size: 60 nm × 60 nm, Ub = +1.7 V, it = 30 pA. All STM images were recorded at 80 K. Photoemission momentum maps of 6P on MgO(100)/Ag(100) at energies of (a) 0.5 eV and (b) 2.5 eV below EF, measured with a photon energy of 35 eV and at an incidence

Impact of fluorination on interface energetics and growth of pentacene on Ag(111)

• Qi Wang,
• Meng-Ting Chen,
• Antoni Franco-Cañellas,
• Bin Shen,
• Thomas Geiger,
• Holger F. Bettinger,
• Frank Schreiber,
• Ingo Salzmann,
• Alexander Gerlach and
• Steffen Duhm

Beilstein J. Nanotechnol. 2020, 11, 1361–1370, doi:10.3762/bjnano.11.120

• the photon energy, which allowed to determine the coherent position (PH) and the coherent fraction (fH) of the adsorbate atoms [66][69]. The former gave the adsorption distance in terms of the lattice spacing of the silver substrate: dH = d0(n + PH) (typical precision < 0.05 Å), with n being an

• corrections associated with it [82]. For HR-XPS, the photon energy was 800 eV, and the angle between the incoming beam and the substrate normal was 60°. Thickness-dependent UPS and XPS experiments were carried out at Soochow University in an ultrahigh vacuum system consisting of three interconnected chambers

• ) Reflectivity and photoelectron yield (Yp) as a function of the photon energy (hυ) relative to the Bragg energy (EBragg = 2630 eV) for a (sub)monolayer (<2 Å) F4PEN thin film on Ag(111). For each element, the coherent position (PH) and the coherent fraction (fH) are given. (d) Chemical structure of F4PEN. (e

Microwave photon detection by an Al Josephson junction

• Leonid S. Revin,
• Andrey L. Pankratov,
• Anna V. Gordeeva,
• Anton A. Yablokov,
• Igor V. Rakut,
• Victor O. Zbrozhek and
• Leonid S. Kuzmin

Beilstein J. Nanotechnol. 2020, 11, 960–965, doi:10.3762/bjnano.11.80

• fit of the lifetime below). In this case, the potential barrier height is 1.3 × 10−24 J, while the photon energy at 9 GHz is 6 × 10−24 J. Thus, we are in the range where few-photon detection is possible. Results and Discussion In this section, we present preliminary results of the first measurements

Band tail state related photoluminescence and photoresponse of ZnMgO solid solution nanostructured films

• Vadim Morari,
• Aida Pantazi,
• Nicolai Curmei,
• Vitalie Postolache,
• Emil V. Rusu,
• Marius Enachescu,
• Ion M. Tiginyanu and
• Veaceslav V. Ursaki

Beilstein J. Nanotechnol. 2020, 11, 899–910, doi:10.3762/bjnano.11.75

• the alloy. Moreover, the luminescence is excited by the photon energy (3.81 eV) much lower than the bandgap for the thin film with the x value of 0.40 (4.28 eV). The same is true for the luminescence measured at low temperature (Table 2). The bandgap of the alloy at low temperature was recalculated

• coating and aerosol spray pyrolysis, measured at low temperature (20 K) and room temperature. One can see that the PL band in the film prepared by spay pyrolysis is much narrower as compared to the band in the film prepared by spin coating, and it is shifted to higher photon energy, i.e., closer to the

Effect of Ag loading position on the photocatalytic performance of TiO₂ nanocolumn arrays

• Jinghan Xu,
• Yanqi Liu and
• Yan Zhao

Beilstein J. Nanotechnol. 2020, 11, 717–728, doi:10.3762/bjnano.11.59

• , transfer to the conduction band of TiO2, or directly participate in the catalytic reaction [39]. Because of the wide bandgap, TiO2 can only absorb UV light. After the valence band electron absorbs the photon energy, it transitions from the valence band to the conduction band, and it takes part in the

Semitransparent Sb₂S₃ thin film solar cells by ultrasonic spray pyrolysis for use in solar windows

• Jako S. Eensalu,
• Atanas Katerski,
• Erki Kärber,
• Lothar Weinhardt,
• Monika Blum,
• Clemens Heske,
• Wanli Yang,
• Ilona Oja Acik and
• Malle Krunks

Beilstein J. Nanotechnol. 2019, 10, 2396–2409, doi:10.3762/bjnano.10.230

• Laboratory (LBNL). The Sb2S3 films were excited with a photon energy of 180 eV, and the emitted X-rays at the S L2,3 edge were recorded as a function of energy. The reference chemicals for XES measurements were purchased from Alfa Aesar (Sb2S3 and Sb2O3 powders, both 99.999% w/w) and Sb2(SO4)3 powder (99.91

Rapid thermal annealing for high-quality ITO thin films deposited by radio-frequency magnetron sputtering

• Petronela Prepelita,
• Ionel Stavarache,
• Doina Craciun,
• Florin Garoi,
• Catalin Negrila,
• Beatrice Gabriela Sbarcea and
• Valentin Craciun

Beilstein J. Nanotechnol. 2019, 10, 1511–1522, doi:10.3762/bjnano.10.149

• for the as-deposited and RTA-treated ITO samples. Photon energy dependence of the a) real and b) imaginary part of the complex dielectric permittivity for the as-deposited and RTA-treated ITO samples. Parameters and conditions for the production of ITO thin films. XRD results for as-deposited and RTA

BiOCl/TiO₂/diatomite composites with enhanced visible-light photocatalytic activity for the degradation of rhodamine B

• Minlin Ao,
• Kun Liu,
• Xuekun Tang,
• Zishun Li,
• Qian Peng and
• Jing Huang

Beilstein J. Nanotechnol. 2019, 10, 1412–1422, doi:10.3762/bjnano.10.139

• edges of TiO2/diatomite and BTD show a small red shift compared with BiOCl and TiO2. The band gap energy (Eg) of the samples was calculated by the Kubelka–Munk equation [44]: αhν = A(hν − Eg)n/2, and the absorption coefficient, photon energy, a constant and band gap of the sample are expressed by α, hν

Gas sensing properties of individual SnO₂ nanowires and SnO₂ sol–gel nanocomposites

• Alexey V. Shaposhnik,
• Dmitry A. Shaposhnik,
• Sergey Yu. Turishchev,
• Olga A. Chuvenkova,
• Stanislav V. Ryabtsev,
• Alexey A. Vasiliev,
• Xavier Vilanova,
• Francisco Hernandez-Ramirez and
• Joan R. Morante

Beilstein J. Nanotechnol. 2019, 10, 1380–1390, doi:10.3762/bjnano.10.136

• compact packing of SnO2 lattices in powder particles. The XANES and XPS results do not contradict each other. The analysis depth of Sn M4,5 XANES is ≈10 nm, which is much larger than the Sn 3d5/2 XPS analysis depth (<2 nm at 800 eV synchrotron photon energy). It is clear that the inner parts of the SnO2

Quantitative analysis of annealing-induced instabilities of photo-leakage current and negative-bias-illumination-stress in a-InGaZnO thin-film transistors

• Dapeng Wang and
• Mamoru Furuta

Beilstein J. Nanotechnol. 2019, 10, 1125–1130, doi:10.3762/bjnano.10.112

• irrespective of treatment temperature. NBIS-induced critical instability occurs in the high-temperature-annealed TFT. Keywords: metal oxide; photo-induced instabilities; photon energy; thermal annealing; thin-film transistor (TFT) device; Introduction The rapid process of industrialization and

• adjacent interfaces. The incident photon energy (>2.7 eV) excites the defect generation and the leakage current increases in the devices regardless of heating temperature. By means of the double-scan mode and a positive gate pulse, the NBIS-caused hysteresis of the TFTs annealed at different temperatures

• irradiation; (g) photo-leakage current (VGS= −10V and VDS= 10 V) of a-IGZO TFTs in the reverse measurement as a function of photon energy of the incident light. Transfer characteristics in the forward measurement for the devices annealed at (a) 300 °C, (b) 350 °C, and (c) 400 °C, and in the reverse

Nanoscale optical and structural characterisation of silk

• Meguya Ryu,
• Reo Honda,
• Adrian Cernescu,
• Arturas Vailionis,
• Armandas Balčytis,
• Jitraporn Vongsvivut,
• Jing-Liang Li,
• Denver P. Linklater,
• Elena P. Ivanova,
• Vygantas Mizeikis,
• Mark J. Tobin,
• Junko Morikawa and
• Saulius Juodkazis

Beilstein J. Nanotechnol. 2019, 10, 922–929, doi:10.3762/bjnano.10.93

• . Nanoscale resolution is readily achievable for SNOM measurements and is defined by the AFM tip, which has a diameter of ca. 10 nm. Around the center of the absorption peak, regions of normal dispersion with a higher refractive index at a higher photon energy (proportional to the wavenumber) was observed

Synthesis of novel C-doped g-C₃N₄ nanosheets coupled with CdIn₂S₄ for enhanced photocatalytic hydrogen evolution

• Jingshuai Chen,
• Chang-Jie Mao,
• Helin Niu and
• Ji-Ming Song

Beilstein J. Nanotechnol. 2019, 10, 912–921, doi:10.3762/bjnano.10.92

• nanocomposites. It can be clearly observed that the light absorbance decreases in the visible light range upon addition of CdIn2S4 content in CISCCN nanocomposites. The band gap (Eg) of g-C3N4, CCN and CdIn2S4 can be estimated by plotting (αhν)2 as a function of the photon energy (Figure 6b), with α being the

• 1s, (c) N 1s, (d) Cd 3d, (e) In 3d and (f) S 2p. (a) UV–vis spectra of g-C3N4, CCN, CdIn2S4, and CISCCN composites. (b) The plot of (αhν)2 vs photon energy (hν) for g-C3N4, CCN and CdIn2S4. Photoluminescence spectra of g-C3N4, CCN and CISCCN3 samples. (a) Time-dependent visible-light-induced

Fabrication of silver nanoisland films by pulsed laser deposition for surface-enhanced Raman spectroscopy

• Bogusław Budner,
• Mariusz Kuźma,
• Barbara Nasiłowska,
• Bartosz Bartosewicz,
• Malwina Liszewska and
• Bartłomiej J. Jankiewicz

Beilstein J. Nanotechnol. 2019, 10, 882–893, doi:10.3762/bjnano.10.89

• deposited silver layers X-ray photoelectron spectroscopy (XPS) was used (XPS spectrometer, Prevac Company). The measurements were made using an X-ray source equipped with an Al anode emitting X-ray radiation with photon energy of 1486.6 eV. The analysis of registered XPS spectra was performed in the CasaXPS

Coexisting spin and Rabi oscillations at intermediate time regimes in electron transport through a photon cavity

• Vidar Gudmundsson,
• Hallmann Gestsson,
• Nzar Rauf Abdullah,
• Chi-Shung Tang,
• Andrei Manolescu and
• Valeriu Moldoveanu

Beilstein J. Nanotechnol. 2019, 10, 606–616, doi:10.3762/bjnano.10.61

• coexisting radiative transitions and photon-assisted tunneling [9]. The characteristic time of the transient and the intermediate regime depends on the the ratio of the system lead coupling and the electron–photon coupling in addition to the shape or geometry of the central system and the photon energy [13

• the system, and the other one is the first excited one-electron state state. We select the photon energy to establish a Rabi resonance between these two states. It is bound to be weak as it relies on the small charge overlap of the states, but it is also interesting as it promotes a charge oscillation

• photon content, and the z-component of the spin of the 64 lowest-in-energy many-body states of the closed central system are displayed in Figure 2. The photon energy = 0.343 meV coupling the two lowest one-electron states mostly localized in each quantum dot leads to a Rabi resonance showing up in non

Quantification and coupling of the electromagnetic and chemical contributions in surface-enhanced Raman scattering

• Yarong Su,
• Yuanzhen Shi,
• Ping Wang,
• Jinglei Du,
• Markus B. Raschke and
• Lin Pang

Beilstein J. Nanotechnol. 2019, 10, 549–556, doi:10.3762/bjnano.10.56

• surface [10], including the trend to higher values for longer wavelengths. Computed excitation profiles for chemical enhancement in [16], however, showed the chemical enhancement to decrease with decreasing photon energy. However, the exact experimental conditions are not captured in that theory, and the

• because the electronic structure of a metal–molecule system is very sensitive to the increase of the excitation photon energy [29]. In addition to the excitation energy, the chemical mechanism in SERS is sensitive to the local molecular environment and the property of the metal surface. As for the

Zn/F-doped tin oxide nanoparticles synthesized by laser pyrolysis: structural and optical properties

• Florian Dumitrache,
• Iuliana P. Morjan,
• Elena Dutu,
• Ion Morjan,
• Claudiu Teodor Fleaca,
• Monica Scarisoreanu,
• Alina Ilie,
• Marius Dumitru,
• Cristian Mihailescu,
• Adriana Smarandache and
• Gabriel Prodan

Beilstein J. Nanotechnol. 2019, 10, 9–21, doi:10.3762/bjnano.10.2

• bandgap, grain size, oxygen deficiency, surface roughness, and impurity centers [21]. The direct bandgaps of the nanoparticles were determined from the Tauc relation [50][51][52] given by: where α is the absorption coefficient, A is a constant, hν is the photon energy, n is an index that can take

• different values depending on the type of transition. In this case n equals to ½, corresponding to a direct transition. The optical energy gap Eg can be estimated by plotting (αhν)2 versus (hν), then by extrapolating the linear portion of the absorption edge to the photon energy axis at the value (αhν)2 = 0

Contactless photomagnetoelectric investigations of 2D semiconductors

• Marian Nowak,
• Marcin Jesionek,
• Barbara Solecka,
• Piotr Szperlich,
• Piotr Duka and
• Anna Starczewska

Beilstein J. Nanotechnol. 2018, 9, 2741–2749, doi:10.3762/bjnano.9.256

• and holes induced by a back-gate voltage in graphene. Theoretical Description In the presented investigations, it was assumed that the 2D material is illuminated by a circular spot of TEM00 light with photon energy greater than its optical energy gap. The transport of electrons and holes through 2D

Polarization-dependent strong coupling between silver nanorods and photochromic molecules

• Gwénaëlle Lamri,
• Alessandro Veltri,
• Jean Aubard,
• Pierre-Michel Adam,
• Nordin Felidj and
• Anne-Laure Baudrion

Beilstein J. Nanotechnol. 2018, 9, 2657–2664, doi:10.3762/bjnano.9.247

• interplay between the coherent dipole coupling between exciton and plasmon and the incoherent exchange of photon energy between both systems. This can happen when the damping of both separate oscillators is different, which is our case with the plasmonic resonance and the MC molecular exciton. The large

Exploring the photoleakage current and photoinduced negative bias instability in amorphous InGaZnO thin-film transistors with various active layer thicknesses

• Dapeng Wang and
• Mamoru Furuta

Beilstein J. Nanotechnol. 2018, 9, 2573–2580, doi:10.3762/bjnano.9.239

• and illumination stress (NBIS)-induced instability in amorphous InGaZnO thin-film transistors (a-IGZO TFTs) with various active layer thicknesses (TIGZO) were investigated. The photoleakage current was found to gradually increase in a-IGZO TFTs irrespective of the TIGZO when the photon energy of

• because of its excellent electrical and optical properties [5][6][7][8]. Although the band gap of IGZO (≈3.1 eV) is higher than the photon energy of visible light, photoinduced leakage current under visible-light irradiation can be detected in the oxide-based TFTs [9][10]. This is due to the fact that the

• photoleakage current increases with increasing TIGZO. Figure 2e exhibits the photoleakage current of a-IGZO TFTs with various TIGZO as a function of the photon energy of incident light. When the photon energy exceeds ≈2.7 eV (460 nm), the photoleakage current starts to increase and increases gradually with

Thickness-dependent photoelectrochemical properties of a semitransparent Co₃O₄ photocathode

• Malkeshkumar Patel and
• Joondong Kim

Beilstein J. Nanotechnol. 2018, 9, 2432–2442, doi:10.3762/bjnano.9.228

• layer and the reflectance, respectively. Figure 2b shows α estimated as a function of photon energy (hν). The influence of the Co3O4 morphology on α is interesting. Except for the 70 nm film, α increases with thickness, suggesting an increase in porosity as well. A higher porosity led to higher α values

• thermal oxidation of the Co particles. (a) Optical characteristics including the transmittance and absorbance spectra of Co3O4 films. (b) Absorption coefficient (α) as a function of the photon energy (hv). (c) Photograph of a Co3O4 electrode for photoelectrochemical cell studies. (d) Linear sweep

Performance analysis of rigorous coupled-wave analysis and its integration in a coupled modeling approach for optical simulation of complete heterojunction silicon solar cells

• Ziga Lokar,
• Benjamin Lipovsek,
• Marko Topic and
• Janez Krc

Beilstein J. Nanotechnol. 2018, 9, 2315–2329, doi:10.3762/bjnano.9.216

• refraction). The latter is especially important in solar cells where indirect semiconductors such as silicon (Si) are used as an absorber layer, where the absorption coefficient at the photon energy approaching the value of energy bandgap is small. Furthermore, efficient light management is important in

Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO₂/Si₃N₄-coating

• Dirk König,
• Daniel Hiller,
• Noël Wilck,
• Birger Berghoff,
• Merlin Müller,
• Sangeeta Thakur,
• Giovanni Di Santo,
• Luca Petaccia,
• Joachim Mayer,
• Sean Smith and
• Joachim Knoch

Beilstein J. Nanotechnol. 2018, 9, 2255–2264, doi:10.3762/bjnano.9.210

• . The valence band edges of Si-NWells detected are located within the magenta lines and shown in (b). The bottom energy scales refer to electron kinetic energy up to UV photon energy. The top energy scale shows the energetic position of electrons relative to vacuum level with valence band edges and

• from the sample surface prior to the measurements. Single scans of spectra were recorded over 12 h per NWell sample and subsequently added up for eliminating white noise. Scans for the Si-reference sample were recorded over 2 h and subsequently added up. All NWell samples were exited with a photon

• energy of 8.9 eV and a photon flux of 2 × 1012 s−1. The incident angle of the UV beam onto the sample was 50° with respect to the sample surface normal, and excited electrons were collected with an electron analyzer along the normal vector of the sample surface. The energy calibration of the UPS was

High-throughput synthesis of modified Fresnel zone plate arrays via ion beam lithography

• Kahraman Keskinbora,
• Umut Tunca Sanli,
• Margarita Baluktsian,
• Corinne Grévent,
• Markus Weigand and
• Gisela Schütz

Beilstein J. Nanotechnol. 2018, 9, 2049–2056, doi:10.3762/bjnano.9.194

• device was experimentally determined as a function of the incoming photon energy. The maximum measured DE of the FZP was measured to be 0.60% at 700 eV and decreases to less than 0.45% at 1200 eV. The DE of the whole device including the silicon nitride membrane starts to decrease for energies below 800