Heat-induced morphological changes in silver nanowires deposited on a patterned silicon substrate

• Elyad Damerchi,
• Sven Oras,
• Edgars Butanovs,
• Allar Liivlaid,
• Mikk Antsov,
• Boris Polyakov,
• Annamarija Trausa,
• Veronika Zadin,
• Andreas Kyritsakis,
• Loïc Vidal,
• Karine Mougin,
• Siim Pikker and
• Sergei Vlassov

Beilstein J. Nanotechnol. 2024, 15, 435–446, doi:10.3762/bjnano.15.39

• silicon substrates with square holes were prepared from (100) silicon wafers (Semiconductor Wafer, Inc.) with 50 nm thermal oxide in four steps as follows: 1) conventional optical lithography process to produce the desired pattern in a photoresist on the wafer; 2) selective removal of SiO2 using buffered

Classification and application of metal-based nanoantioxidants in medicine and healthcare

• Nguyen Nhat Nam,
• Nguyen Khoi Song Tran,
• Tan Tai Nguyen,
• Nguyen Ngoc Trai,
• Nguyen Phuong Thuy,
• Hoang Dang Khoa Do,
• Nhu Hoa Thi Tran and
• Kieu The Loan Trinh

Beilstein J. Nanotechnol. 2024, 15, 396–415, doi:10.3762/bjnano.15.36

• ]. The heterostructures increase surface electron deficiency, redox couples, and oxygen vacancies through an intrinsic electric field and lattice mismatch at the metal–semiconductor interface. Thus, a high level of oxygen vacancies enhances the adsorption and activation of oxygen-containing ROS, that is

On the mechanism of piezoresistance in nanocrystalline graphite

• Sandeep Kumar,
• Simone Dehm and
• Ralph Krupke

Beilstein J. Nanotechnol. 2024, 15, 376–384, doi:10.3762/bjnano.15.34

• semiconducting grain boundaries can be considerably increased in the presence of strain. Hence, the asymmetric metallic grain boundaries undergo a metal–semiconductor transition in the presence of strain. This effect could open a way to utilize grain boundaries in graphene for fabricating highly sensitive

Investigating ripple pattern formation and damage profiles in Si and Ge induced by 100 keV Ar⁺ ion beam: a comparative study

• Indra Sulania,
• Harpreet Sondhi,
• Tanuj Kumar,
• Sunil Ojha,
• G R Umapathy,
• Ambuj Mishra,
• Ambuj Tripathi,
• Richa Krishna,
• Devesh Kumar Avasthi and
• Yogendra Kumar Mishra

Beilstein J. Nanotechnol. 2024, 15, 367–375, doi:10.3762/bjnano.15.33

• performed on Si and Ge substrates. A correlation between ripple morphology and ion beam parameters was derived to understand the damage incurred by Ar+ ions inside both materials using RBS-c measurements. Experimental Details Commercially available Si and Ge wafers, procured from Semiconductor wafers Inc

Controllable physicochemical properties of WO_x thin films grown under glancing angle

• Rupam Mandal,
• Aparajita Mandal,
• Alapan Dutta,
• Rengasamy Sivakumar,
• Sanjeev Kumar Srivastava and
• Tapobrata Som

Beilstein J. Nanotechnol. 2024, 15, 350–359, doi:10.3762/bjnano.15.31

• fascinating optical and electrical properties [1]. WOx is a wide-bandgap oxide semiconductor with a large excitonic binding energy of 0.15 eV and a high optical absorption coefficient (≥104 cm−1 in the UV region) [2]. These, in conjunction with decent carrier mobility (12 cm2·V−1·s−1), make this material an

• -stoichiometric compositions and polymorphs, WOx usually behaves as an n-type semiconductor because an unintentional incorporation of a certain amount of reduced W cations is thermodynamically inevitable in these films [8]. It is, therefore, possible to tune the physicochemical properties, such as work function

Investigating structural and electronic properties of neutral zinc clusters: a G₀W₀ and G₀W₀Г₀⁽¹⁾ benchmark

• Sunila Bakhsh,
• Muhammad Khalid,
• Sameen Aslam,
• Muhammad Sohail,
• Muhammad Aamir Iqbal,
• Mujtaba Ikram and
• Kareem Morsy

Beilstein J. Nanotechnol. 2024, 15, 310–316, doi:10.3762/bjnano.15.28

• functional theory (DFT) calculations at different levels of theory to study the transition states (vdW to semiconductor-like states) in Zn clusters. In addition, the approaches used to study the electronic properties, such as ionization potentials (IPs) of zinc, are based on the ∆-SCF methods; for some

• metal energy gap. Apart from this situation, for small-size clusters or nanoparticles, it is possible to observe quantum confinement effects resulting in an indeterminate bandgap, such as in the case of semiconductor clusters. As the size of the cluster decreases, the electronic energy levels become

Determining by Raman spectroscopy the average thickness and N-layer-specific surface coverages of MoS₂ thin films with domains much smaller than the laser spot size

• Felipe Wasem Klein,
• Jean-Roch Huntzinger,
• Vincent Astié,
• Damien Voiry,
• Romain Parret,
• Houssine Makhlouf,
• Sandrine Juillaguet,
• Jean-Manuel Decams,
• Sylvie Contreras,
• Périne Landois,
• Ahmed-Azmi Zahab,
• Jean-Louis Sauvajol and
• Matthieu Paillet

Beilstein J. Nanotechnol. 2024, 15, 279–296, doi:10.3762/bjnano.15.26

• transition to a direct bandgap semiconductor with very high photoluminescence quantum yield when thinned down to a monolayer [13][14][15][16][17]. Its unique electronic and optical properties could provide an edge in many future applications. The multilayers MoS2 structures are of the most common 2Hc type

Design, fabrication, and characterization of kinetic-inductive force sensors for scanning probe applications

• August K. Roos,
• Ermes Scarano,
• Elisabet K. Arvidsson,
• Erik Holmgren and
• David B. Haviland

Beilstein J. Nanotechnol. 2024, 15, 242–255, doi:10.3762/bjnano.15.23

• etch rate of 10 μm/min. The isotropic etch results in an uneven clamping line, as shown in Figure 1g, leading to variations in the mechanical resonant frequency. Before the final etch and release step, we apply a Nitto Semiconductor Wafer Tape to the back side of the wafer, holding it together during

Ion beam processing of DNA origami nanostructures

• Leo Sala,
• Agnes Zerolová,
• Violaine Vizcaino,
• Alain Mery,
• Alicja Domaracka,
• Hermann Rothard,
• Philippe Boduch,
• Dominik Pinkas and
• Jaroslav Kocišek

Beilstein J. Nanotechnol. 2024, 15, 207–214, doi:10.3762/bjnano.15.20

• regimes become the basis of commonly used material processing techniques such as high-energy ion implantation, widely applied in laser, detector, and semiconductor industries [30]. Finally, at low (keV) energies, the interaction of heavy ions is dominated by nuclear stopping, which is used in the most

CdSe/ZnS quantum dots as a booster in the active layer of distributed ternary organic photovoltaics

• Gabriela Lewińska,
• Piotr Jeleń,
• Zofia Kucia,
• Maciej Sitarz,
• Łukasz Walczak,
• Bartłomiej Szafraniak,
• Jerzy Sanetra and
• Konstanty W. Marszalek

Beilstein J. Nanotechnol. 2024, 15, 144–156, doi:10.3762/bjnano.15.14

• –COOH groups, they can be easily labeled for chemical and biological applications. Low-molecular-weight organic molecules coat highly luminescent semiconductor nanocrystals. Materials and Methods Thin films, the intended active layers, were fabricated using the spin-coating method. The layers were a

A visible-light photodetector based on heterojunctions between CuO nanoparticles and ZnO nanorods

• Doan Nhat Giang,
• Nhat Minh Nguyen,
• Duc Anh Ngo,
• Thanh Trang Tran,
• Le Thai Duy,
• Cong Khanh Tran,
• Thi Thanh Van Tran,
• Phan Phuong Ha La and
• Vinh Quang Dang

Beilstein J. Nanotechnol. 2023, 14, 1018–1027, doi:10.3762/bjnano.14.84

• ][18]. Semiconductors are the heart of photodetectors as their bandgap allows for the absorption of photons in the desired wavelength range [19]. There are many semiconductor materials developed for this application. Among them, zinc oxide (ZnO) has been studied extensively over the last decades

• relations under reverse and bias voltages, indicating a good ohmic contact between semiconductor materials and Ag electrodes [42]. It is worth noting that the current rise corresponds to the light intensity increase. The highest photocurrent reached 18 μA under a light illumination of 1.28 mW·cm−2. The low

• negatively charged ions [43][61], following Equation 5: In addition, decorating CuO NPs onto ZnO NRs forms p–n junctions between the two materials. The heterojunction formation leads to a concentration gradient of charge carriers at the interfaces. CuO NPs act as a p-type semiconductor, in which holes are

Nanoarchitectonics of photothermal materials to enhance the sensitivity of lateral flow assays

• Elangovan Sarathkumar,
• Rajasekharan S. Anjana and
• Ramapurath S. Jayasree

Beilstein J. Nanotechnol. 2023, 14, 988–1003, doi:10.3762/bjnano.14.82

• nanomaterials, including noble metal nanomaterials, semiconductor nanomaterials, carbon-based nanomaterials, and polymeric nanomaterials. Then, we review the unique nanoscale architecture of nanomaterials responsible for their photothermal properties. Finally, we explore the current status of photothermal LFA

• properties, that is, plasmonic materials (e.g., Au, Ag, and Pt), semiconductor materials (e.g., transition metal oxides, transition metal chalcogenides, and transition metal dichalcogenides), carbon-based nanomaterials (such as graphene oxide and carbon nanotubes), and polymer nanomaterials [33][34] (Figure

• nanosheets exhibited a high PCE of 52% at 808 nm [40]. Palladium nanocorollae have shown a photothermal effect due to NIR LSPR with a temperature increase up to 50 °C [36]. Semiconductor nanomaterials: Generation and relaxation of electron–hole pairs are responsible for heat generation in semiconductor

Isolation of cubic Si₃P₄ in the form of nanocrystals

• Polina K. Nikiforova,
• Sergei S. Bubenov,
• Vadim B. Platonov,
• Andrey S. Kumskov,
• Nikolay N. Kononov,
• Tatyana A. Kuznetsova and
• Sergey G. Dorofeev

Beilstein J. Nanotechnol. 2023, 14, 971–979, doi:10.3762/bjnano.14.80

• calculations; semiconductor nanocrystals; silicon phosphide; Introduction Advancements in electronics and related fields are calling for new ways of synthesizing compounds. Subsequently, recognizing and utilizing the special properties of nanoparticles (NPs) of new materials using emerging methods offers a

• disordered semiconductor material would be to find the energy at which the attenuation coefficient exceeds 104 cm−1 (the optical gap estimated this way amounts to 2.3 eV). All of these observations disprove earlier theoretical assumptions of defective zinc blende Si3P4 as being a narrow-bandgap semiconductor

Silver-based SERS substrates fabricated using a 3D printed microfluidic device

• Phommachith Sonexai,
• Minh Van Nguyen,
• Bui The Huy and
• Yong-Ill Lee

Beilstein J. Nanotechnol. 2023, 14, 793–803, doi:10.3762/bjnano.14.65

• ], porous aluminum oxide [38], and semiconductors [39] have been reported. Dielectric and semiconductor substrates, such as ZnO nanowires, silicon nanowires, and porous silicon (PS), are particularly popular because of their larger contribution to the amplification of the Raman signal and longer shelf life

Cross-sectional Kelvin probe force microscopy on III–V epitaxial multilayer stacks: challenges and perspectives

• Mattia da Lisca,
• José Alvarez,
• James P. Connolly,
• Nicolas Vaissiere,
• Karim Mekhazni,
• Jean Decobert and
• Jean-Paul Kleider

Beilstein J. Nanotechnol. 2023, 14, 725–737, doi:10.3762/bjnano.14.59

• measurements based on scanning probe microscopy (SPM) allow for the analysis of two-dimensional (2D) features at the surface and along a physical cross section of nanoscale semiconductor structures. Among the wide variety of SPM techniques available [3], Kelvin probe force microscopy (KPFM) is an application

• not repeated here for brevity. The solution presented in this work assumes ohmic contacts and, therefore, Dirichlet boundary conditions fixing potential and carrier concentrations at the boundaries, as reported in section 3.5 of the SILVACO ATLAS manual. The ATLAS module solves semiconductor transport

• and continuity equations numerically in two dimensions and includes flexible descriptions of bulk and surface defect distributions. KELSCAN simulates the experimental setup by sequentially moving the AFM tip across the surface of the sample, statically solving the semiconductor equations at each

Nanomaterials for photocatalysis and applications in environmental remediation and renewable energy

• Viet Van Pham and
• Wee-Jun Ong

Beilstein J. Nanotechnol. 2023, 14, 722–724, doi:10.3762/bjnano.14.58

• semiconductor materials for sustainable applications; for instance, dye solar cells, solar-driven water splitting, NOx removal, and contaminant degradation. The synthesis of semiconductor nanomaterials published on this thematic issue indicates a wide range of synthetic routes. The as-prepared nanomaterials

Humidity-dependent electrical performance of CuO nanowire networks studied by electrochemical impedance spectroscopy

• Jelena Kosmaca,
• Juris Katkevics,
• Jana Andzane,
• Raitis Sondors,
• Liga Jasulaneca,
• Raimonds Meija,
• Kiryl Niherysh,
• Yelyzaveta Rublova and
• Donats Erts

Beilstein J. Nanotechnol. 2023, 14, 683–691, doi:10.3762/bjnano.14.54

• chemisorption and physisorption at the nanowire interface, which suppress electronic transport inside the p-type semiconductor nanowire but enhance ionic transport in the water layers adsorbed on the nanowire surface. Possible physicochemical processes at the nanowire surface are discussed in line with

• ; electrochemical impedance spectroscopy; humidity; nanowire; sensor; Introduction Semiconductor metal oxide nanomaterials have demonstrated a great potential for integration in a variety of devices, such as gas and humidity sensors, nanoelectronics, and low-power thermoelectrical generators [1][2][3][4][5][6

• ]. Copper oxide (CuO) nanowires are excellent candidates for applications in such devices owing to the inexpensive, simple and scalable bottom-up synthesis, and robust physical properties [7][8][9]. A high specific surface area of nanowires and a p-type semiconductor structure are suggested for highly

Metal-organic framework-based nanomaterials as opto-electrochemical sensors for the detection of antibiotics and hormones: A review

• Akeem Adeyemi Oladipo,
• Saba Derakhshan Oskouei and
• Mustafa Gazi

Beilstein J. Nanotechnol. 2023, 14, 631–673, doi:10.3762/bjnano.14.52

• authors pointed out that metal clusters (for example, isoreticular MOFs) essentially define the overall electronic properties of MOFs and provide MOFs with the characteristics of a wide-bandgap semiconductor like ZnO. The size of the organic linker and the hybridization of the central atom of the linker

Titania nanoparticles for photocatalytic degradation of ethanol under simulated solar light

• Evghenii Goncearenco,
• Iuliana P. Morjan,
• Claudiu Teodor Fleaca,
• Florian Dumitrache,
• Elena Dutu,
• Monica Scarisoreanu,
• Valentin Serban Teodorescu,
• Alexandra Sandulescu,
• Crina Anastasescu and
• Ioan Balint

Beilstein J. Nanotechnol. 2023, 14, 616–630, doi:10.3762/bjnano.14.51

• gas production has been detected for the samples from series “b”, whereas the CO2 evolution was observed for all samples from series “a”. Keywords: ethanol; H2 production; laser pyrolysis; photocatalyst; TiO2 nanoparticles; Introduction Semiconductor materials are widely used, from electronic

• components to substances that catalyze decomposition processes. They have a bandgap that varies from one material to another. Titanium dioxide is a semiconductor material and has been investigated, at first, for solar cells [1][2][3][4] and as optoelectronic component [5][6][7]. In recent years, it has been

Thermal transport in kinked nanowires through simulation

• Alexander N. Robillard,
• Graham W. Gibson and
• Ralf Meyer

Beilstein J. Nanotechnol. 2023, 14, 586–602, doi:10.3762/bjnano.14.49

• Fourier model. Keywords: ballistic transport; kinked nanowire; molecular dynamics; phonon Monte Carlo; thermal transport; Introduction The thermal conductivity of semiconductor nanostructures is of great interest because of potential applications in a wide variety of fields, such as thermal control

SERS performance of GaN/Ag substrates fabricated by Ag coating of GaN platforms

• Magdalena A. Zając,
• Bogusław Budner,
• Malwina Liszewska,
• Bartosz Bartosewicz,
• Łukasz Gutowski,
• Jan L. Weyher and
• Bartłomiej J. Jankiewicz

Beilstein J. Nanotechnol. 2023, 14, 552–564, doi:10.3762/bjnano.14.46

• absorption spectra of the GaN platform and the GaN/Ag SERS substrates fabricated using MS and PLD at different temperatures are shown in Figure 5. The spectrum of GaN shows the typical spectral shape of a broadband semiconductor with an absorption edge around 365 nm (3.4 eV). The spectra of all GaN/Ag

Conjugated photothermal materials and structure design for solar steam generation

• Chia-Yang Lin and
• Tsuyoshi Michinobu

Beilstein J. Nanotechnol. 2023, 14, 454–466, doi:10.3762/bjnano.14.36

• semiconductor materials, optical absorption significantly varies with the wavelength, depending on the bandgap energy. When semiconductor materials are irradiated with light, electron–hole pairs with energies close to the bandgap are produced. The excited electrons eventually return to a lower energy state and

Plasmonic nanotechnology for photothermal applications – an evaluation

• A. R. Indhu,
• L. Keerthana and
• Gnanaprakash Dharmalingam

Beilstein J. Nanotechnol. 2023, 14, 380–419, doi:10.3762/bjnano.14.33

• semiconductor metal oxide nanoparticles exhibit the spill-over effect, which alters the plasmonic absorption and spectral width of the plasmonic nanoparticles integrated in dielectric matrices. This spill-over effect, however, decreases with a decrease in electron density. For nanoparticles with low electron

Bismuth-based nanostructured photocatalysts for the remediation of antibiotics and organic dyes

• Akeem Adeyemi Oladipo and
• Faisal Suleiman Mustafa

Beilstein J. Nanotechnol. 2023, 14, 291–321, doi:10.3762/bjnano.14.26

• inactivate pathogens. The term “photocatalysis” refers to chemical reactions that use light and a photocatalyst (basically a semiconductor). A few of the requirements that an effective photocatalyst system should satisfy include high sunlight absorption, an appropriate gap (1.5–2.8 eV), long-term charge

• semiconductor as well as the redox levels of the substrate [11][21]. One of the main barriers preventing photocatalysis from being used in practical applications is the lack of suitable semiconductor photocatalysts. The commonly used nanometre-sized photocatalysts are metal oxides or sulfides (binary compounds

• : TiO2, CuO, CdS, MoO3; ternary compounds: Bi2Mo3O12, ZnFe2O4; quaternary compounds: Ni0.5Zn0.5Fe2O4, Bi4NbxTa1−xO8I) [19][20][21][22][23][24][25][26]. Because of its distinct features, TiO2 is the most extensively investigated photocatalytic semiconductor. However, it barely absorbs 4–5% of the

High–low Kelvin probe force spectroscopy for measuring the interface state density

• Ryo Izumi,
• Masato Miyazaki,
• Yan Jun Li and
• Yasuhiro Sugawara

Beilstein J. Nanotechnol. 2023, 14, 175–189, doi:10.3762/bjnano.14.18

• of the effects of semiconductor interface states with high spatial resolution using high and low AC bias frequencies compared with the cutoff frequency of the carrier transfer between the interface and bulk states. Information on the energy spectrum of the interface state density is important for

• actual semiconductor device evaluation, and there is a need to develop a method for obtaining such physical quantities. Here, we propose high–low Kelvin probe force spectroscopy (high–low KPFS), an electrostatic force spectroscopy method using high- and low-frequency AC bias voltages to measure the

• interface state density inside semiconductors. We derive an analytical expression for the electrostatic forces between a tip and a semiconductor sample in the accumulation, depletion, and inversion regions, taking into account the charge transfer between the bulk and interface states in semiconductors. We