Electron transport through nanoscale multilayer graphene and hexagonal boron nitride junctions

• Aleksandar Staykov and
• Takaya Fujisaki

Beilstein J. Nanotechnol. 2025, 16, 2132–2143, doi:10.3762/bjnano.16.147

• and Stone–Wales defects. Nitrogen doping transforms graphene from a zero-bandgap semiconductor to a metal, while Stone–Wales defects open the bandgap. For h-BN, we considered Stone–Wales defects. A detailed comparison of electron transport through five materials, that is, multilayer nanoscale graphene

• [2], nanoscale electronics and electronic components [3], thermoelectric devices [4], and transparent films [5]. Graphene is a two-dimensional zero-bandgap semiconductor with excellent bulk conductivity. Its in-plane electron transport strongly depends on lattice order, lattice defects, and three

• as a bulk defect. In this work, we deal with periodic graphene models, and we consider only graphitic nitrogen substitutions. The graphitic nitrogen substitution in graphene changes its properties from a zero-bandgap semiconductor to metallic character and decreases its work function [7]. Stone–Wales

Programmable soliton dynamics in all-Josephson-junction logic cells and networks

• Vsevolod I. Ruzhickiy,
• Anastasia A. Maksimovskaya,
• Sergey V. Bakurskiy,
• Andrey E. Schegolev,
• Maxim V. Tereshonok,
• Mikhail Yu. Kupriyanov,
• Nikolay V. Klenov and
• Igor I. Soloviev

Beilstein J. Nanotechnol. 2025, 16, 1883–1893, doi:10.3762/bjnano.16.131

• ), the “passing” soliton can still deliver enough of an impulse to toggle the cell’s state. The soliton diode What is even more interesting is that the KICK architecture can be engineered to function as a soliton diode, a device the function of which is similar to that of a semiconductor diode, allowing

Ambient pressure XPS at MAX IV

• Mattia Scardamaglia,
• Ulrike Küst,
• Alexander Klyushin,
• Rosemary Jones,
• Jan Knudsen,
• Robert Temperton,
• Andrey Shavorskiy and
• Esko Kokkonen

Beilstein J. Nanotechnol. 2025, 16, 1677–1694, doi:10.3762/bjnano.16.118

• , even on topologically complex surfaces, making it essential for the fabrication of next-generation devices [46][47][48]. In the semiconductor industry, ALD enables the creation of nanoscale transistors and high-k dielectric materials, essential for shrinking transistor dimensions and enhancing

• as HfO2, which allows for the creation of much smaller gate sizes. Another suggested change is to substitute the silicon channels with a III–V semiconductor material such as InAs, which, among other properties, has a narrower band gap [62]. However, one challenge to overcome with the InAs/HfO2

Prospects of nanotechnology and natural products for cancer and immunotherapy

• Jan Filipe Andrade Santos,
• Marcela Bernardes Brasileiro,
• Pamela Danielle Cavalcante Barreto,
• Ligiane Aranha Rocha and
• José Adão Carvalho Nascimento Júnior

Beilstein J. Nanotechnol. 2025, 16, 1644–1667, doi:10.3762/bjnano.16.116

• quantum dot nanoparticles are fluorescent semiconductor compounds that can act as drug carriers [40][41]. Nanotechnology, natural products, cancer, and immunotherapy Natural products are chemicals produced by living organisms such as microbes, marine organisms, animals, fungi, and plants. They are widely

• nanoparticles are semiconductor structures smaller than typical nanoparticles, ranging from 2 to 10 nm in size. They are composed of heavy metal or inorganic material and exhibit fluorescent activity, making them commonly used for pharmaceutical applications [153][154]. The technology’s composition is

• characterized by two free functional groups responsible for drug binding, while a semiconductor shell helps reduce toxicity [106]. Quantum dot nanoparticle synthesis processes involve colloidal and plasma systems, which allow for the utilization of bioactive compounds such as fructose, chitosan, citric acid

Nanotechnology-based approaches for the removal of microplastics from wastewater: a comprehensive review

• Nayanathara O Sanjeev,
• Manjunath Singanodi Vallabha and
• Rebekah Rubidha Lisha Rabi

Beilstein J. Nanotechnol. 2025, 16, 1607–1632, doi:10.3762/bjnano.16.114

• semiconductor catalyst. In contrast, for reduction to occur, the redox potential must be lower than the conduction band edge. This is because, upon excitation, holes generated in the valence band participate in oxidation reactions, whereas the electrons excited to the conduction band drive the reduction

Photocatalytic degradation of ofloxacin in water assisted by TiO₂ nanowires on carbon cloth: contributions of H₂O₂ addition and substrate absorbability

• Iram Hussain,
• Lisha Zhang,
• Zhizhen Ye and
• Jin-Ming Wu

Beilstein J. Nanotechnol. 2025, 16, 1567–1579, doi:10.3762/bjnano.16.111

• Iram Hussain Lisha Zhang Zhizhen Ye Jin-Ming Wu State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China Zhejiang Provincial Engineering Research Center of Oxide Semiconductors for

Transient electronics for sustainability: Emerging technologies and future directions

• Jae-Young Bae,
• Myung-Kyun Choi and
• Seung-Kyun Kang

Beilstein J. Nanotechnol. 2025, 16, 1545–1556, doi:10.3762/bjnano.16.109

• to their tunable dissolution profiles in physiological environments [52][53]. Notably, Mo and W were employed as the underlying metal foils for building metal-oxide-semiconductor field-effect transistors (MOSFETs) and PIN diodes, suggesting their utility in the development of next-generation

• such as Mg and Mo have been deposited onto bioresorbable polymer substrates in the form of resistive-type sensors or interconnects using shadow masking techniques [14][48][63][64]. In addition, semiconductor or dielectric materials such as ZnO and MgO have been patterned and deposited using shadow

• semiconductor processes, the substitution of conventional dielectric and metal layers with biodegradable counterparts suggests the feasibility of wafer-scale foundry integration (Figure 2d) [80]. For example, the foundry-scale fabrication of transient complementary metal-oxide-semiconductor devices (inverter

Influence of laser beam profile on morphology and optical properties of silicon nanoparticles formed by laser ablation in liquid

• Natalie Tarasenka,
• Vladislav Kornev,
• Alena Nevar and
• Nikolai Tarasenko

Beilstein J. Nanotechnol. 2025, 16, 1533–1544, doi:10.3762/bjnano.16.108

• its prominent optical and electronic properties, is the most widely used semiconductor material in many fields of microelectronics, optics, photovoltaics, and molecular sensing. Nevertheless, even despite its widespread application, the interest in silicon-based structures, especially having sizes in

• the preparation of non-spherical NPs are the fabrication of semiconductor nanowires such as hybrid CdS [20] and ZnS nanowires [21]. Si nanowires can also be prepared by laser ablation [4][5]. However, the synthesis is typically performed in gaseous atmosphere, and the developed approaches require high

Nanomaterials for biomedical applications

• Iqra Zainab,
• Zohra Naseem,
• Syeda Rubab Batool,
• Filippo Pierini,
• Seda Kizilel and
• Muhammad Anwaar Nazeer

Beilstein J. Nanotechnol. 2025, 16, 1499–1503, doi:10.3762/bjnano.16.105

• conditions such as cancer, neurological disorders, and infections. Quantum dots are a widely studied type of nanomaterial used in biomedical diagnostics. When these semiconductor particles are exposed to light, they strongly and stably emit fluorescence. Unlike regular dyes, quantum dots do not quickly fade

Laser processing in liquids: insights into nanocolloid generation and thin film integration for energy, photonic, and sensing applications

• Akshana Parameswaran Sreekala,
• Pooja Raveendran Nair,
• Jithin Kundalam Kadavath,
• Bindu Krishnan,
• David Avellaneda Avellaneda,
• M. R. Anantharaman and
• Sadasivan Shaji

Beilstein J. Nanotechnol. 2025, 16, 1428–1498, doi:10.3762/bjnano.16.104

• [12]. The size, shape, and composition of these nanomaterials can be controlled by adjusting experimental parameters such as laser settings, liquid medium, and target material. Additionally, the preparation of doped and multicomponent semiconductor nanostructures could expand LAL’s potential in

• pulse excitation (532 nm). The morphological changes induced by thermal and photochemical effects were found to influence the optical properties of these particles. Another commonly reported semiconductor material by LFL is zinc oxide (ZnO) [33][34]. The optical properties, particularly the UV emission

• spheres and is suitable for a variety of metal and semiconductor NPs, including Ag, Au, Cu, Fe, Ni, Fe2O3, Fe3O4, Co3O4, NiO, TiO2, WO3, and ZnO, which all exhibit optical absorption at 355 or 532 nm (using a Nd:YAG laser). Pulsed laser irradiation of colloidal NPs differs from LAL primarily in that PLIL

Enhancing the therapeutical potential of metalloantibiotics using nano-based delivery systems

• Alejandro Llamedo,
• Marina Cano,
• Raquel G. Soengas and
• Francisco J. García-Alonso

Beilstein J. Nanotechnol. 2025, 16, 1350–1366, doi:10.3762/bjnano.16.98

• targeted release, coupled with the ability to efficiently deliver drugs to cells like macrophages, make MSiNPs an attractive option for overcoming drug delivery challenges, such as those encountered with bacterial infections [91]. Quantum dots. Quantum dots (QDs) are semiconductor nanocrystals generally

Enhancing the photoelectrochemical performance of BiOI-derived BiVO₄ films by controlled-intensity current electrodeposition

• Huu Phuc Dang,
• Khanh Quang Nguyen,
• Nguyen Thi Mai Tho and
• Tran Le

Beilstein J. Nanotechnol. 2025, 16, 1289–1301, doi:10.3762/bjnano.16.94

• limited by material challenges, including insufficient light absorption, high electron–hole recombination rates, and poor stability under operating conditions [5][6]. Among various semiconductor materials, bismuth vanadate (BiVO4) has attracted considerable interest due to its strong visible light

• . Characteristics of materials X-ray diffraction (XRD, Bruker D8 Advance) and Raman spectroscopy (LabRAM Odyssey Semiconductor) were used to analyze the crystal structures of photoanodes. UV–vis absorption spectra were obtained using a Cary 60 spectrophotometer. X-ray photoelectron spectroscopy (XPS, VG ESCALAB250

Electronic and optical properties of chloropicrin adsorbed ZnS nanotubes: first principle analysis

• Prakash Yadav,
• Boddepalli SanthiBhushan and
• Anurag Srivastava

Beilstein J. Nanotechnol. 2025, 16, 1184–1196, doi:10.3762/bjnano.16.87

• . Semiconductor nanomaterials such as graphene, B12N12, fullerene C60, carbon nanotubes, WO₃, ZnO, ZnS, ZnSe, ZnTe, SnO₂, TiO₂, MoS₂, and NiO have been widely employed in gas sensor applications due to their superior selectivity, sensitivity, and response characteristics [20][21][22][23][24][25][26][27][28][29

Influence of ion beam current on the structural, optical, and mechanical properties of TiO₂ coatings: ion beam-assisted vs conventional electron beam evaporation

• Agata Obstarczyk and
• Urszula Wawrzaszek

Beilstein J. Nanotechnol. 2025, 16, 1097–1112, doi:10.3762/bjnano.16.81

• was calculated by extrapolating the linear portion of the curves [42] based on the plot of (αhν)1/2 as a function of photon energy (hν) (Figure 5). Based on the literature [43][44][45], titanium dioxide in the anatase phase is an indirect-bandgap semiconductor. In the case of the films deposited using

Soft materials nanoarchitectonics: liquid crystals, polymers, gels, biomaterials, and others

• Katsuhiko Ariga

Beilstein J. Nanotechnol. 2025, 16, 1025–1067, doi:10.3762/bjnano.16.77

• also illustrate the potential applications, including organic semiconductor devices, electrochemical catalysts, thin-film sensors, solar energy generation, plastic crystal electrolytes, microactuators, smart light-responsive materials, self-repairing materials, enzyme cascade sensors, healing materials

• semiconductors and the dopant molecules. The redox potential of the dopant is a critical factor in regulating the Fermi level of the semiconductor. The research group led by Ishii and Yamashita utilizes proton coupling electron transfer reactions, which are extensively employed in biochemical processes [278

• between benzoquinone and hydroquinone is precisely controlled by pH, in accordance with the Nernst equation. In order to compensate for the charge carriers in the semiconductor, dopant ions must be supplied through the redox reaction. The efficient doping of polymeric organic semiconductor thin films is

Tendency in tip polarity changes in non-contact atomic force microscopy imaging on a fluorite surface

• Bob Kyeyune,
• Philipp Rahe and
• Michael Reichling

Beilstein J. Nanotechnol. 2025, 16, 944–950, doi:10.3762/bjnano.16.72

• . Keywords: atomic resolution imaging; calcium fluoride surface; interaction force; non-contact atomic force microscopy (NC-AFM); tip change; Introduction Non-contact atomic force microscopy (NC-AFM) [1] is a surface science tool that has been used to atomically resolve surfaces of semiconductor and

Characterization of ion track-etched conical nanopores in thermal and PECVD SiO₂ using small angle X-ray scattering

• Shankar Dutt,
• Rudradeep Chakraborty,
• Christian Notthoff,
• Pablo Mota-Santiago,
• Christina Trautmann and
• Patrick Kluth

Beilstein J. Nanotechnol. 2025, 16, 899–909, doi:10.3762/bjnano.16.68

• dioxide [29][40][30]. Amorphous silicon dioxide (SiO2) has excellent chemical stability, well-understood surface chemistry, and compatibility with semiconductor processing, opening up new applications for track-etched nanopores in this material [30]. In this study, we report the characterization of track

Heat-induced transformation of nickel-coated polycrystalline diamond film studied in situ by XPS and NEXAFS

• Olga V. Sedelnikova,
• Yuliya V. Fedoseeva,
• Dmitriy V. Gorodetskiy,
• Yuri N. Palyanov,
• Elena V. Shlyakhova,
• Eugene A. Maksimovskiy,
• Anna A. Makarova,
• Lyubov G. Bulusheva and
• Aleksandr V. Okotrub

Beilstein J. Nanotechnol. 2025, 16, 887–898, doi:10.3762/bjnano.16.67

• their distinct atomic structures. Diamond is a wide bandgap semiconductor, which makes it resistant to high voltages and ionizing radiation. In contrast, graphitic materials demonstrate excellent electrical conductivity. This divergence in physical properties has encouraged significant interest in

Ar⁺ implantation-induced tailoring of RF-sputtered ZnO films: structural, morphological, and optical properties

• Manu Bura,
• Divya Gupta,
• Arun Kumar and
• Sanjeev Aggarwal

Beilstein J. Nanotechnol. 2025, 16, 872–886, doi:10.3762/bjnano.16.66

• , which is a well-established and non-destructive method to determine crystal structure, lattice defects, and dynamics. Since ZnO is a polar semiconductor, the phonon–electron interaction produces longitudinal optical (LO) phonon modes, whose long-range behavior considerably affects the efficacy of

Insights into the electronic and atomic structures of cerium oxide-based ultrathin films and nanostructures using high-brilliance light sources

• Paola Luches and
• Federico Boscherini

Beilstein J. Nanotechnol. 2025, 16, 860–871, doi:10.3762/bjnano.16.65

• FEL was also exploited to investigate the electron transfer process in a composite plasmonic/semiconductor system, based on silver NPs embedded in a CeO2 film [63]. Pump–probe XANES measurements were performed at the Ce N4,5 edge upon photoexcitation of plasmonic resonances in the metal NPs by visible

Morphology and properties of pyrite nanoparticles obtained by pulsed laser ablation in liquid and thin films for photodetection

• Akshana Parameswaran Sreekala,
• Bindu Krishnan,
• Rene Fabian Cienfuegos Pelaes,
• David Avellaneda Avellaneda,
• Josué Amílcar Aguilar-Martínez and
• Sadasivan Shaji

Beilstein J. Nanotechnol. 2025, 16, 785–805, doi:10.3762/bjnano.16.60

• detectivity in the order of 106–108 Jones is attained. The FeS2/n-Si photodetector works in self-powered mode also in addition to the photoconductive mode. The results show the effective fabrication of nanostructured ultraviolet–visible–near infrared thin film photodetectors using semiconductor nanocolloids

• Earth, including toxic heavy metals and metalloids, radionuclides, and organic pollutants [5]. In addition to the aforementioned advantages as a semiconductor, it has the potential to be used in various applications through its nanostructures created via pulsed laser ablation in liquid (PLAL) and thin

• as indicators of surface recombination. Peter et al. have explained this mechanism in semiconductor photoanodes [63]. When light is turned on, an immediate photocurrent appears due to the rapid separation of electron–hole pairs in the space charge region. This initial response is followed by a decay

Nanostructured materials characterized by scanning photoelectron spectromicroscopy

• Matteo Amati,
• Alexey S. Shkvarin,
• Alexander I. Merentsov,
• Alexander N. Titov,
• María Taeño,
• David Maestre,
• Sarah R. McKibbin,
• Zygmunt Milosz,
• Ana Cremades,
• Rainer Timm and
• Luca Gregoratti

Beilstein J. Nanotechnol. 2025, 16, 700–710, doi:10.3762/bjnano.16.54

• ; operando; oxides; scanning photoelectron spectromicroscopy; semiconductor nanowires; transition metal dichalcogenides; XPS; Introduction Nanometer or micrometer-sized materials play a key role in modern technologies in the search of new routes for unforeseen performances generating breakthroughs in

•  1i–k). Operando characterization of InP nanowire p–n junctions Semiconductor nanowires offer unprecedented possibilities in utilizing, combining, and modifying material properties for application in electronic, photonic, energy harvesting, or quantum information devices [15][16]. Their small

• expensive III–V materials to the active device area. The flexible geometry of nanowires standing upright on their growth substrate directly leads to gate-all-around metal-oxide-semiconductor stacks [23][24], and advanced electronic device designs such as nanowire tunneling field-effect transistors [24] or

High-temperature epitaxial growth of tantalum nitride thin films on MgO: structural evolution and potential for SQUID applications

• Michelle Cedillo Rosillo,
• Oscar Contreras López,
• Jesús Antonio Díaz,
• Agustín Conde Gallardo and
• Harvi A. Castillo Cuero

Beilstein J. Nanotechnol. 2025, 16, 690–699, doi:10.3762/bjnano.16.53

• nitride system TaNx can be an insulator, semiconductor, or superconductor and also can exhibit a variety of crystallographic phases [8][9]. For example, Nie and collaborators mentioned that Ta2N thin films presented a high-temperature coefficient of resistance, and resistors using this material as a

The impact of tris(pentafluorophenyl)borane hole transport layer doping on interfacial charge extraction and recombination

• Konstantinos Bidinakis and
• Stefan A. L. Weber

Beilstein J. Nanotechnol. 2025, 16, 678–689, doi:10.3762/bjnano.16.52

• ]. For PTAA, under illumination, a similar mechanism is proposed, whereby the oxidation of PTAA raises the conductivity of the polymer [33]. For both HTLs, the inclusion of tBP promotes a better distribution of the HTL on the perovskite, preventing organic semiconductor/LiTFSI phase segregation [34

• solubility in solvents orthogonal to the underlying perovskite active layer. Such an alternative compound is tris(pentafluorophenyl)borane (BCF), which is an electrophilic Lewis acid that interacts with the organic semiconductor and increases its conductivity. Here, we performed a dedicated study for the HTL

Electron beam-based direct writing of nanostructures using a palladium β-ketoesterate complex

• Chinmai Sai Jureddy,
• Krzysztof Maćkosz,
• Aleksandra Butrymowicz-Kubiak,
• Iwona B. Szymańska,
• Patrik Hoffmann and
• Ivo Utke

Beilstein J. Nanotechnol. 2025, 16, 530–539, doi:10.3762/bjnano.16.41

• this study, we present a detailed analysis of the characteristics of deposits obtained using the new precursor bis(tert-butylacetoacetate)palladium(II), [Pd(tbaoac)2], a member of the β-ketoesterate complex group. Given the growing interest in carbon nanotubes (CNTs) and graphene for semiconductor