Ambient pressure XPS at MAX IV

• Mattia Scardamaglia,
• Ulrike Küst,
• Alexander Klyushin,
• Rosemary Jones,
• Jan Knudsen,
• Robert Temperton,
• Andrey Shavorskiy and
• Esko Kokkonen

Beilstein J. Nanotechnol. 2025, 16, 1677–1694, doi:10.3762/bjnano.16.118

• remediation, and other light-driven processes. Atomic layer deposition Atomic layer deposition (ALD) is a critical thin-film technology widely used in semiconductors, nanoelectronics, energy storage, catalysis, and advanced coatings. It enables atomically precise control over film thickness and composition

Nanotechnology-based approaches for the removal of microplastics from wastewater: a comprehensive review

• Nayanathara O Sanjeev,
• Manjunath Singanodi Vallabha and
• Rebekah Rubidha Lisha Rabi

Beilstein J. Nanotechnol. 2025, 16, 1607–1632, doi:10.3762/bjnano.16.114

• radicals. These benefits are particularly significant when the particle size is reduced to around 10 nm. Utilizing nanostructured semiconductors in photocatalytic applications proves to be more efficient, as a larger proportion of the photogenerated electron–hole pairs is available at the surface

• . Nanoparticles, owing to their high surface-to-volume ratio, demonstrate superior catalytic performance compared to bulk materials. Furthermore, the particle size of semiconductors influences their bandgap energy and crystalline structure, which in turn affects their redox potential and the spatial distribution

Photocatalytic degradation of ofloxacin in water assisted by TiO₂ nanowires on carbon cloth: contributions of H₂O₂ addition and substrate absorbability

• Iram Hussain,
• Lisha Zhang,
• Zhizhen Ye and
• Jin-Ming Wu

Beilstein J. Nanotechnol. 2025, 16, 1567–1579, doi:10.3762/bjnano.16.111

• Iram Hussain Lisha Zhang Zhizhen Ye Jin-Ming Wu State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China Zhejiang Provincial Engineering Research Center of Oxide Semiconductors for

Transient electronics for sustainability: Emerging technologies and future directions

• Jae-Young Bae,
• Myung-Kyun Choi and
• Seung-Kyun Kang

Beilstein J. Nanotechnol. 2025, 16, 1545–1556, doi:10.3762/bjnano.16.109

• has prompted further exploration of chemically analogous materials, such as germanium [45][46], silicon–germanium alloys [45], amorphous semiconductors [45], indium–gallium–zinc oxide (IGZO) [47], and metal oxides such as zinc oxide [48], for their potential as bioresorbable semiconductors. These

• circuits, such as ring oscillators, entirely composed of water-soluble materials, supporting its applicability in future bioelectronic devices. Nevertheless, the currently known repertoire of bioresorbable semiconductors remains narrow, both in material selection and bandgap range. Expanding the library to

• -bandgap bioresorbable semiconductors based on magnesium–silicon alloys, such as Mg2Si, could be promising candidates to fill this gap (Figure 2a) [49][50]. However, further exploration is needed to discover and engineer additional semiconducting materials, including a broader range of silicon- or

Influence of laser beam profile on morphology and optical properties of silicon nanoparticles formed by laser ablation in liquid

• Natalie Tarasenka,
• Vladislav Kornev,
• Alena Nevar and
• Nikolai Tarasenko

Beilstein J. Nanotechnol. 2025, 16, 1533–1544, doi:10.3762/bjnano.16.108

• resulting NPs appear more separated with no outer shell observed. Mostly, the formation of spherical NPs with clear surface boundaries was observed, which is typical for laser ablation of semiconductors. The interesting morphological peculiarity of the Si nanostructures produced with a Bessel beam was

Laser processing in liquids: insights into nanocolloid generation and thin film integration for energy, photonic, and sensing applications

• Akshana Parameswaran Sreekala,
• Pooja Raveendran Nair,
• Jithin Kundalam Kadavath,
• Bindu Krishnan,
• David Avellaneda Avellaneda,
• M. R. Anantharaman and
• Sadasivan Shaji

Beilstein J. Nanotechnol. 2025, 16, 1428–1498, doi:10.3762/bjnano.16.104

• . These techniques have been important for progress in this field of study. 1.1 Laser ablation in liquids Laser ablation in liquids (LAL) is a well-established technique for synthesizing nanomaterials such as metals, semiconductors, ceramics, polymers, and alloys. Several review articles published since

• engineering, and energy storage. LFL can be applied to a wide range of materials, including metals such as gold, silver, or copper, semiconductors, and perovskites materials. The method is versatile enough to cater to the synthesis of NPs across different compositions, making it a valuable tool for

• metals [45][46], oxides [47], semiconductors [48], and even carbides [41][49]. When compared to other particle fabrication processes, material versatility of this technique stands out. Further, the SMSPs obtained by PLML are unique in a way that they are spherical, mechanically very strong [50], and

Wavelength-dependent correlation of LIPSS periodicity and laser penetration depth in stainless steel

• Nitin Chaudhary,
• Chavan Akash Naik,
• Shilpa Mangalassery,
• Jai Prakash Gautam and
• Sri Ram Gopal Naraharisetty

Beilstein J. Nanotechnol. 2025, 16, 1302–1315, doi:10.3762/bjnano.16.95

• different metals, semiconductors, and polymers [9][12][31][32][33][34][35][36][37][38][39]. LIPSS characterized by ripple-like subwavelength periodic structures on a material’s surface, are broadly classified into low spatial frequency LIPSS (LSFL) and high spatial frequency LIPSS (HSFL), based on their

Soft materials nanoarchitectonics: liquid crystals, polymers, gels, biomaterials, and others

• Katsuhiko Ariga

Beilstein J. Nanotechnol. 2025, 16, 1025–1067, doi:10.3762/bjnano.16.77

• compounds, including oligoacenes and oligothiophenes, exhibit excellent carrier transport properties in the aggregated state, rendering them promising candidates for use as organic semiconductors. It can be posited that liquid crystal compounds incorporating extended π-conjugated cores may be considered as

• liquid crystal semiconductors that exhibit anisotropic conduction of electronic charge carriers. The efficient transport of electronic carriers has been confirmed in nematic, chiral nematic, smectic, and columnar phases. It has been demonstrated that liquid crystals comprising extended π-conjugated units

• photovoltaic effect and polarization-induced electroluminescence. The transport of both holes and electrons in various liquid crystal phases of semiconductors represents a fascinating area of research [234][235][236]. The use of liquid crystal semiconductors in the construction of lightweight organic

Time-resolved probing of laser-induced nanostructuring processes in liquids

• Maximilian Spellauge,
• David Redka,
• Mianzhen Mo,
• Changyong Song,
• Heinz Paul Huber and
• Anton Plech

Beilstein J. Nanotechnol. 2025, 16, 968–1002, doi:10.3762/bjnano.16.74

• of electrons (of the order of 10%) can be excited, which would lead to changes of the interatomic forces faster than electron–phonon coupling. This has been seen in semiconductors [24][112] in particular. The electron–phonon coupling will increase the temperature of the lattice, which will undergo

Ar⁺ implantation-induced tailoring of RF-sputtered ZnO films: structural, morphological, and optical properties

• Manu Bura,
• Divya Gupta,
• Arun Kumar and
• Sanjeev Aggarwal

Beilstein J. Nanotechnol. 2025, 16, 872–886, doi:10.3762/bjnano.16.66

• , although the variation in surface parameters and optical characteristics can significantly impact the applicability of ZnO films in semiconductors, spintronics, solar cells, and green energy industries [3][18]. This motivated us to investigate the emergence of Raman longitudinal optical modes and their

Morphology and properties of pyrite nanoparticles obtained by pulsed laser ablation in liquid and thin films for photodetection

• Akshana Parameswaran Sreekala,
• Bindu Krishnan,
• Rene Fabian Cienfuegos Pelaes,
• David Avellaneda Avellaneda,
• Josué Amílcar Aguilar-Martínez and
• Sadasivan Shaji

Beilstein J. Nanotechnol. 2025, 16, 785–805, doi:10.3762/bjnano.16.60

• prepared by PLAL. Keywords: electrophoretic deposition; pulsed laser ablation in liquid; pyrite nanoparticles; self-powered photodetector; spin coating; Introduction Pyrite (FeS2) is one of the earth-abundant and nontoxic semiconductors possessing a promising role in optoelectronic applications. FeS2 has

• without coming into contact with any surface electrons [64]. In summary, self-powered photodetectors operate based on the photovoltaic effect in semiconductors, where incident light generates electron–hole pairs. The resulting photocurrent arises from the separation and directs movement of these charge

Efficiency of single-pulse laser fragmentation of organic nutraceutical dispersions in a circular jet flow-through reactor

• Tina Friedenauer,
• Maximilian Spellauge,
• Alexander Sommereyns,
• Verena Labenski,
• Tuba Esatbeyoglu,
• Christoph Rehbock,
• Heinz P. Huber and
• Stephan Barcikowski

Beilstein J. Nanotechnol. 2025, 16, 711–727, doi:10.3762/bjnano.16.55

• extraction methods, exemplified by extraction from coffee powders [10] and alkaloid drug extraction from ground root powder [11]. Initially, LSPC research focused on inorganic materials such as metals [12][13], semiconductors [1], and oxides [14][15], where the particle formation mechanisms are well

Nanostructured materials characterized by scanning photoelectron spectromicroscopy

• Matteo Amati,
• Alexey S. Shkvarin,
• Alexander I. Merentsov,
• Alexander N. Titov,
• María Taeño,
• David Maestre,
• Sarah R. McKibbin,
• Zygmunt Milosz,
• Ana Cremades,
• Rainer Timm and
• Luca Gregoratti

Beilstein J. Nanotechnol. 2025, 16, 700–710, doi:10.3762/bjnano.16.54

• footprint allows for the combination of different materials with dislocation-free interfaces and to form axial or radial heterostructures of varying material, doping, or crystal phase [17][18][19]. Nanowire heterostructures based on III–V semiconductors are especially promising for electronic

The impact of tris(pentafluorophenyl)borane hole transport layer doping on interfacial charge extraction and recombination

• Konstantinos Bidinakis and
• Stefan A. L. Weber

Beilstein J. Nanotechnol. 2025, 16, 678–689, doi:10.3762/bjnano.16.52

• conductivity of selective contacts, as well as the junction quality and energetic alignment with the absorber. On the hole extracting side, organic semiconductors have been extensively used due to their flexibility and favorable properties. Two of such compatible materials that have yielded high performing

• passivation, post-fabrication treatment, and choice of optimal materials [21][22][23], leaving research on HTL optimization vastly overlooked. In regular n-i-p architecture devices mostly two organic semiconductors have been used as HTL in the past: spiro-OMeTAD and poly[bis(4-phenyl)(2,4,6-trimethylphenyl

• adjacent perovskite. There have been many studies trying to address these points and advance PSC performance through HTL optimization, with conventional approaches mainly focusing on the doping strategies applied to these two materials [26][27][28][29]. The organic semiconductors spiro-OMeTAD and PTAA are

Emerging strategies in the sustainable removal of antibiotics using semiconductor-based photocatalysts

• Yunus Ahmed,
• Keya Rani Dutta,
• Parul Akhtar,
• Md. Arif Hossen,
• Md. Jahangir Alam,
• Obaid A. Alharbi,
• Hamad AlMohamadi and
• Abdul Wahab Mohammad

Beilstein J. Nanotechnol. 2025, 16, 264–285, doi:10.3762/bjnano.16.21

• enable localized surface plasmonic resonance (LSPR). The second strategy focuses on the development of heterojunctions between two semiconductors that is activated by visible light [65][66]. These heterojunctions should have bandgaps and energy levels that match the valence and conduction bands

• shown in Figure 5a. In type-II heterojunctions, however, holes move from SC2 to SC 1 (Figure 5b). In the p–n junction system, a type-II mechanism exchanges electrons and holes. Electrons travel from p-type to n-type semiconductors, whereas holes move from n-type to p-type semiconductors (Figure 5c). The

• , they also reduce compound semiconductors’ redox capacity and pose problems to the continuous flow of electrons and holes because of electrostatic repulsion. A Schottky junction is also formed by combining two different semiconductor materials (Figure 5d). The oxidation capability of Schottky

Recent advances in photothermal nanomaterials for ophthalmic applications

• Jiayuan Zhuang,
• Linhui Jia,
• Chenghao Li,
• Rui Yang,
• Jiapeng Wang,
• Wen-an Wang,
• Heng Zhou and
• Xiangxia Luo

Beilstein J. Nanotechnol. 2025, 16, 195–215, doi:10.3762/bjnano.16.16

• levels that fall between those of conductors and insulators. Their light absorption characteristics are primarily determined by their bandgap width, ranging from 0 to 3 eV (Figure 2g) [72]. Semiconductors with narrow bandgaps are capable of absorbing incident light energy that is greater than or equal to

• via non-radiative relaxation, resulting in localized lattice heating [76][77]. Therefore, semiconductors with narrow bandgaps typically show broad absorption spectra and high efficiency in photon trapping. In contrast, wide-bandgap semiconductors have a more limited range of light absorption and less

• narrowing of the bandgap, thereby enhancing visible light absorption [83]. For example, pristine TiO2 hardly absorbs visible light with wavelengths greater than 400 nm, while N-doped TiO2 quantum dots exhibit significant visible light absorption between 400 and 1000 nm [84]. Semiconductors that rely on

Clays enhanced with niobium: potential in wastewater treatment and reuse as pigment with antibacterial activity

• Silvia Jaerger,
• Patricia Appelt,
• Mario Antônio Alves da Cunha,
• Fabián Ccahuana Ayma,
• Ricardo Schneider,
• Carla Bittencourt and
• Fauze Jacó Anaissi

Beilstein J. Nanotechnol. 2025, 16, 141–154, doi:10.3762/bjnano.16.13

• photocatalysis is a cost-effective alternative to biological treatment methods for purifying polluted water [8]. Using semiconductors as heterogeneous catalysts proves to be more efficient than traditional methods, as the photocatalytic process gradually decomposes contaminating molecules without generating

• residues from the original organic matter, thus avoiding the disposal of sludge [8]. This approach allows the removal of various organic pollutants, including textile dyes, using solid semiconductors (e.g., NbOPO4 and Nb2O5) and photons (with energy greater than the bandgap energy of the semiconductor) to

Characterization of ZnO nanoparticles synthesized using probiotic Lactiplantibacillus plantarum GP258

• Prashantkumar Siddappa Chakra,
• Aishwarya Banakar,
• Shriram Narayan Puranik,
• Vishwas Kaveeshwar,
• C. R. Ravikumar and
• Devaraja Gayathri

Beilstein J. Nanotechnol. 2025, 16, 78–89, doi:10.3762/bjnano.16.8

• semiconductors. Also, ZnO NPs exhibit antimicrobial activity, targeted drug delivery, catalytic activity, and antidiabetic, larvicidal, acaricidal and anticancer activity in addition to their usage in different medical devices and pharmaceuticals [11][12][13]. We report the ecologically safe production of ZnO

Strain-induced bandgap engineering in 2D ψ-graphene materials: a first-principles study

• Kamal Kumar,
• Nora H. de Leeuw,
• Jost Adam and
• Abhishek Kumar Mishra

Beilstein J. Nanotechnol. 2024, 15, 1440–1452, doi:10.3762/bjnano.15.116

• cannot move from the valence to the conduction band even when strain is applied. This direct bandgap allows the most efficient transport of charge carriers and easy recombination of electrons and holes, indicating its suitability in quantum computing, which requires semiconductors with direct bandgaps. ψ

Various CVD-grown ZnO nanostructures for nanodevices and interdisciplinary applications

• The-Long Phan,
• Le Viet Cuong,
• Vu Dinh Lam and
• Ngoc Toan Dang

Beilstein J. Nanotechnol. 2024, 15, 1390–1399, doi:10.3762/bjnano.15.112

• electronic/optoelectronic devices, energy storage/generation systems, and renewable energy conversion devices with high performance and low-power consumption [1][2][3]. In comparison to semiconductors, ZnO has attracted much more attention. This is due to ZnO having outstanding semiconductor behaviours in

• ordering can also be established in ZnO lattices upon doping with transition-metal and/or rare-earth elements (known as magnetic semiconductors, DMSs). This is expected to enable the development of next-generation spintronic devices [14] applicable to quantum and neuromorphic computing for artificial

Out-of-plane polarization induces a picosecond photoresponse in rhombohedral stacked bilayer WSe₂

• Guixian Liu,
• Yufan Wang,
• Zhoujuan Xu,
• Zhouxiaosong Zeng,
• Lanyu Huang,
• Cuihuan Ge and
• Xiao Wang

Beilstein J. Nanotechnol. 2024, 15, 1362–1368, doi:10.3762/bjnano.15.109

• lead to a high-efficiency photoelectric conversion that has the potential to surpasses the Shockley–Queisser limit [24][31][32][33][34]. In this regard, constructing 2D vdW semiconductors with OOP polarization and moderate bandgap holds great promise for high-performance self-powered BPVE devices. More

Mn-doped ZnO nanopowders prepared by sol–gel and microwave-assisted sol–gel methods and their photocatalytic properties

• Cristina Maria Vlăduț,
• Crina Anastasescu,
• Silviu Preda,
• Oana Catalina Mocioiu,
• Simona Petrescu,
• Jeanina Pandele-Cusu,
• Dana Culita,
• Veronica Bratan,
• Ioan Balint and
• Maria Zaharescu

Beilstein J. Nanotechnol. 2024, 15, 1283–1296, doi:10.3762/bjnano.15.104

• toxic, and light-responsive. Up to now, advanced oxidation processes (AOPs) were used for the cleaning of waste water. Although AOPs based on engineered materials were performed in conjunction with biological treatments, the need for optimization still remains. Many photoactive semiconductors were

• and MW ZnO samples, with larger Eg values than those of the manganese-doped samples. Photoluminescence Photoluminescence (PL) measurements are usually used to describe the radiative recombinations of electron–hole pairs in semiconductors exposed to light irradiation. A high PL signal measured for a

• value 1/2 for direct-bandgap semiconductors and 2 for indirect-bandgap semiconductors or amorphous compounds. Photoluminescence measurements (PL) were carried out using a Carry Eclipse fluorescence spectrometer from Agilent Technologies and the following parameters: scan rate of 120 nm·min−1, spectral

Introducing third-generation periodic table descriptors for nano-qRASTR modeling of zebrafish toxicity of metal oxide nanoparticles

• Supratik Kar and
• Siyun Yang

Beilstein J. Nanotechnol. 2024, 15, 1142–1152, doi:10.3762/bjnano.15.93

• range of substances that can be categorized as carbon-based, metal oxides, semiconductors, polymers, clays, emulsions, or metals [2]. Metal oxide nanoparticles (MONPs) are metallic oxides that exist within the nanoscale range and can be intentionally created or occur naturally [3]. Under the rapid

Photocatalytic methane oxidation over a TiO₂/SiNWs p–n junction catalyst at room temperature

• Qui Thanh Hoai Ta,
• Luan Minh Nguyen,
• Ngoc Hoi Nguyen,
• Phan Khanh Thinh Nguyen and
• Dai Hai Nguyen

Beilstein J. Nanotechnol. 2024, 15, 1132–1141, doi:10.3762/bjnano.15.92

• recombination of charge carriers in semiconductors is a main drawback for photocatalytic oxidative coupling of methane (OCM) reactions. Herein, we propose a novel catalyst by developing a p–n junction titania–silicon nanowires (TiO2/SiNWs) heterostructure. The structure is fabricated by atomic layer deposition

• recombination of charge carriers is mainly attributed to the anisotropic movement of generated electron–hole pairs in semiconductors. Therefore, the implementation of a driving force could remarkably accelerate the oriented motion of electrons and holes, which could suppress recombination and eventually improve

Recent progress on field-effect transistor-based biosensors: device perspective

• Billel Smaani,
• Fares Nafa,
• Mohamed Salah Benlatrech,
• Ismahan Mahdi,
• Hamza Akroum,
• Mohamed walid Azizi,
• Khaled Harrar and
• Sayan Kanungo

Beilstein J. Nanotechnol. 2024, 15, 977–994, doi:10.3762/bjnano.15.80

• presents the organization of PKD FET-based biosensor. This structure uses the double-gate architecture with III–V compound semiconductors at the channel and an N+-doped pocket at the junction between the source and channel regions. The drain and source regions are realized with GaSb material. HfO2 was used

• application, as these biosensor topologies exhibit the best current sensitivity and enhanced performances. The PKD TFET-based biosensor uses III–V compound semiconductors in the body channel and N+-doped pockets at the source–channel junction [114], enhancing sensitivity for the detection of biomolecules. The