Nitrogen-doped twisted graphene grown on copper by atmospheric pressure CVD from a decane precursor

• Ivan V. Komissarov,
• Nikolai G. Kovalchuk,
• Vladimir A. Labunov,
• Ksenia V. Girel,
• Olga V. Korolik,
• Mikhail S. Tivanov,
• Algirdas Lazauskas,
• Mindaugas Andrulevičius,
• Tomas Tamulevičius,
• Viktoras Grigaliūnas,
• Šarunas Meškinis,
• Sigitas Tamulevičius and
• Serghej L. Prischepa

Beilstein J. Nanotechnol. 2017, 8, 145–158, doi:10.3762/bjnano.8.15

• also discussed. Keywords: G-resonance; nitrogen doping of graphene; Raman spectroscopy; twisted graphene; X-ray photoemission spectroscopy; Introduction Single layer graphene (SLG) exhibits exceptional electronic properties, making it one of the most advanced materials of our time. Due to its high

• distinguish the morphology of studied samples. Sample A is characterized by the presence of hexagonally shaped domains with a few and single layer graphene domains. In turn, sample B contains the mixture of single and double layer domains where the double layer fraction dominates. Our studies do not indicate

Reasons and remedies for the agglomeration of multilayered graphene and carbon nanotubes in polymers

• Rasheed Atif and
• Fawad Inam

Beilstein J. Nanotechnol. 2016, 7, 1174–1196, doi:10.3762/bjnano.7.109

Advanced atomic force microscopy techniques III

• Thilo Glatzel and
• Thomas Schimmel

Beilstein J. Nanotechnol. 2016, 7, 1052–1054, doi:10.3762/bjnano.7.98

• surfaces [33], and combined STM and AFM measurements on single-layer graphene on SiC(0001) [34] have been investigated, discussed, and presented. Another combined STM-AFM study determines very accurately the probe-nanocrystal interaction potential [35]. Finally, enhanced information can also be achieved by

Graphene on SiC(0001) inspected by dynamic atomic force microscopy at room temperature

• Mykola Telychko,
• Jan Berger,
• Zsolt Majzik,
• Pavel Jelínek and
• Martin Švec

Beilstein J. Nanotechnol. 2015, 6, 901–906, doi:10.3762/bjnano.6.93

• Physical Electronics, Faculty of Nuclear Sciences and Physical Engineering, Czech Technical University in Prague, Břehová 7, CZ-11519 Prague, Czech Republic 10.3762/bjnano.6.93 Abstract We investigated single-layer graphene on SiC(0001) by atomic force and tunneling current microscopy, to separate the

• graphene overgrows a step (see Figure 1c), there is no visible rippling. The set of curves in Figure 2a shows local spectroscopy taken just before the imaging above the single-layer graphene with the tuning-fork-based dAFM sensor, oscillating at amplitudes of 150 pm. The Δf, time-averaged current (

• with recent findings and show the single-layer graphene on SiC(0001) as a morphologically very flat substrate. Acknowledgements The research was funded by GACR grant no.14-02079S, GACR grant no. EXCELENCE 14-374527G. Constant-current STM images taken over an incomplete graphene layer grown on the 6H

Electroburning of few-layer graphene flakes, epitaxial graphene, and turbostratic graphene discs in air and under vacuum

• Andrea Candini,
• Nils Richter,
• Domenica Convertino,
• Camilla Coletti,
• Franck Balestro,
• Wolfgang Wernsdorfer,
• Mathias Kläui and
• Marco Affronte

Beilstein J. Nanotechnol. 2015, 6, 711–719, doi:10.3762/bjnano.6.72

• fabrication of nanometer-sized gaps can be increased from about 50% [20] to more than 95% by performing the EB process under vacuum [21][22]. While this last result is certainly very promising, it has been demonstrated only for single-layer graphene grown by CVD and then transferred on SiO2. Therefore it is

• section and the Supporting Information File 1 for more details on the sample growth and characterization), which should display a smaller gate dependence with respect to single layer graphene. In total, we processed twelve junctions in air and nine under vacuum. When working under ambient conditions, all

X-ray photoelectron spectroscopy of graphitic carbon nanomaterials doped with heteroatoms

• Toma Susi,
• Thomas Pichler and
• Paola Ayala

Beilstein J. Nanotechnol. 2015, 6, 177–192, doi:10.3762/bjnano.6.17

• sustaining current densities 1000 times higher than copper [16][17]. Finally, atomically thin single-layer graphene is extremely elastic yet impermeable [18], and the stiffest and strongest material ever measured [19]. Furthermore, the charge carriers in graphene behave as massless Dirac fermions [7

• massless Dirac fermions [7][86]. The exact position of the intrinsic graphene C 1s line would logically be the one corresponding exclusively to free-standing single-layer graphene. However, this is challenging to measure due to sample-related issues. It is still necessary to understand how the absence of

Cathode lens spectromicroscopy: methodology and applications

• T. O. Menteş,
• G. Zamborlini,
• A. Sala and
• A. Locatelli

Beilstein J. Nanotechnol. 2014, 5, 1873–1886, doi:10.3762/bjnano.5.198

• exhibits unique morphological and electronic properties, which originate from the different film and substrate symmetries [50]. At temperatures above 800 °C, micrometer-sized single layer graphene crystals can be obtained upon exposure to ethylene, oriented at 3° with respect to the main substrate

Carbon-based smart nanomaterials in biomedicine and neuroengineering

• Antonina M. Monaco and
• Michele Giugliano

Beilstein J. Nanotechnol. 2014, 5, 1849–1863, doi:10.3762/bjnano.5.196

• single-layer graphene [30], and its large surface area [31], make graphene and graphene oxide (GO) one of the most promising materials for technological and biomedical applications. Carbon-based nanomaterials in biomedical applications The peculiar ability of several nanomaterials to functionally

Electronic and electrochemical doping of graphene by surface adsorbates

• Hugo Pinto and
• Alexander Markevich

Beilstein J. Nanotechnol. 2014, 5, 1842–1848, doi:10.3762/bjnano.5.195

• acid (TPA) or tetracyanoethylene (TCNE) [37][38], shown in Figure 6a and Figure 6b, respectively. After the deposition of TPA, Raman spectroscopic studies showed upshifts of both Raman G and 2D frequencies compared to single layer graphene indicating p-type doping [37]. Electronic structure

Analytical development and optimization of a graphene–solution interface capacitance model

• Hediyeh Karimi,
• Rasoul Rahmani,
• Reza Mashayekhi,
• Leyla Ranjbari,
• Amir H. Shirdel,
• Niloofar Haghighian,
• Parisa Movahedi,
• Moein Hadiyan and
• Razali Ismail

Beilstein J. Nanotechnol. 2014, 5, 603–609, doi:10.3762/bjnano.5.71

• the measurement of quantum capacitance of bilayer graphene in an ionic liquid electrolyte. The aim of this study is to evaluate the quantum capacitance of single layer graphene sheet as a function of voltage, and validate theoretical predictions with the experimental results [26]. Results and

• Discussion Proposed model The quantum capacitance of nanoscale devices is considered as an important quantity in the design of nanoelectronic devices. The classic expression for quantum capacitance utilized in the prediction of the theoretical model for an ideal single layer graphene [27][28] is in which ∂Q

• desired parameters are tabulated. Figure 5 shows the proposed single-layer graphene quantum capacitance model, the optimized proposed model and the experimental extracted data, as graphs. To evaluate the quality of the optimized model compared with the experimental data, the mean absolute percentage error

Routes to rupture and folding of graphene on rough 6H-SiC(0001) and their identification

• M. Temmen,
• O. Ochedowski,
• B. Kleine Bussmann,
• M. Schleberger,
• M. Reichling and
• T. R. J. Bollmann

Beilstein J. Nanotechnol. 2013, 4, 625–631, doi:10.3762/bjnano.4.69

• few layer graphene (FLG) is highly attractive from an application point of view, due to its extraordinary electronic properties. In order to study its properties, we demonstrate and discuss three different routes to in situ create and identify (twisted) FLG. Single layer graphene (SLG) sheets

• point of view due to its angle-dependent electronic properties [4][5][6][7][8][9][10]. Twisted few layer graphene (FLG) exhibits electronic properties ranging from Dirac cones found for single layer graphene (SLG) for rotation angles over 15° where the layers are effectively decoupled, to a Fermi

Micro- and nanoscale electrical characterization of large-area graphene transferred to functional substrates

• Gabriele Fisichella,
• Salvatore Di Franco,
• Patrick Fiorenza,
• Raffaella Lo Nigro,
• Fabrizio Roccaforte,
• Cristina Tudisco,
• Guido G. Condorelli,
• Nicolò Piluso,
• Noemi Spartà,
• Stella Lo Verso,
• Corrado Accardi,
• Cristina Tringali,
• Sebastiano Ravesi and
• Filippo Giannazzo

Beilstein J. Nanotechnol. 2013, 4, 234–242, doi:10.3762/bjnano.4.24

• , due to the extremely low solubility of carbon in the solid metal, the graphene formation is purely a surface process and this allows one to obtain single-layer graphene on a very large fraction (above 90%) of the metal surface [17]. In order to use CVD-grown graphene for electronic applications, the

Pure hydrogen low-temperature plasma exposure of HOPG and graphene: Graphane formation?

• Baran Eren,
• Dorothée Hug,
• Laurent Marot,
• Rémy Pawlak,
• Marcin Kisiel,
• Roland Steiner,
• Dominik M. Zumbühl and
• Ernst Meyer

Beilstein J. Nanotechnol. 2012, 3, 852–859, doi:10.3762/bjnano.3.96

• 2671 cm−1 for single-layer graphene) [25]. The G peak represents the optical E2g phonons at the center of the Brillouin zone. The cross-section for the C–C sp3 vibrations, when available, is negligible for visible excitation. Upon hydrogen plasma exposure of single-layer graphene (Figure 1c, 2nd panel

• single-layer graphene after it had been annealed at 400 °C for 24 h in an argon atmosphere. Atomic force microscopy Though Raman spectroscopy is a strong tool for the analysis of graphitic materials, it does not provide direct evidence of hydrogenation. In order to understand the nature of the D and D

• single layer graphene on SiO2 do not reveal any significant roughening or blister formation (not shown here). The changes in the Raman spectrum of graphene are solely due to atomic rearrangements, either as a result of hydrogenation or corrugation at the atomic level. Since it was shown that low-energy

Modeling noncontact atomic force microscopy resolution on corrugated surfaces

• Kristen M. Burson,
• Mahito Yamamoto and
• William G. Cullen

Beilstein J. Nanotechnol. 2012, 3, 230–237, doi:10.3762/bjnano.3.26

• physics that describes the crumpling of soft membranes [10]. More recently, a study comparing scanning-probe measurements of the corrugation of single-layer graphene (by UHV STM) with that of SiO2 (by ambient AFM) reported a significantly greater corrugation for the graphene than that observed for the SiO2

Quantitative multichannel NC-AFM data analysis of graphene growth on SiC(0001)

• Christian Held,
• Thomas Seyller and
• Roland Bennewitz

Beilstein J. Nanotechnol. 2012, 3, 179–185, doi:10.3762/bjnano.3.19

• . Recently, fundamental studies have led to an improvement of this process, now allowing for the production of almost wafer-size single-layer graphene coverage [1][2][3]. Understanding the interaction between the substrate and the epitaxial layer during the growth process is crucial for further optimization

• rendered and overlayed with a colour scale representing the local contact potential. Most parts of the sample show a bluish colour indicating single-layer graphene coverage. Some smaller terraces exhibit a higher contact potential represented in red, which indicates double-layer graphene. Double-layer

• to form one graphene sheet [3]. This simple stochiometric argument is supported by our experimental results, as all spots for single-layer graphene coverage are connected to double-layer graphene spots by the corresponding green arrows in Figure 5. The contact potential difference between single- and