Evaluating metal-organic precursors for focused ion beam-induced deposition through solid-layer decomposition analysis

• Benedykt R. Jany,
• Katarzyna Madajska,
• Aleksandra Butrymowicz-Kubiak,
• Franciszek Krok and
• Iwona B. Szymańska

Beilstein J. Nanotechnol. 2025, 16, 1942–1951, doi:10.3762/bjnano.16.135

• backscattered electron (SEM BSE) analysis. For each studied precursor, an optimal ion fluence was determined, defined as the ion fluence at which the sputtering of the formed metal-rich structures becomes the dominant process, exceeding the rate of precursor decomposition and material buildup. While sputtering

• irradiation and what kind of morphology is developed for the finally formed metal-rich structures. (3) Analyzing BSE images of the evolving surface morphology at successive stages of FIB irradiation in order to determine “the sputtering point”, that is, the threshold ion fluence at which the sputtering

• , the BSE signal rapidly drops; all precursor material already decomposed into the metal-rich phase, the sputtering of the metal phase has begun to dominate, and the layer is getting thinner and thinner and finally is sputtered off (as in Figure 1b–e). From this dependence, one can determine the optimal

Quantum circuits with SINIS structures

• Mikhail Tarasov,
• Mikhail Fominskii,
• Aleksandra Gunbina,
• Artem Krasilnikov,
• Maria Mansfeld,
• Dmitrii Kukushkin,
• Andrei Maruhno,
• Valeria Ievleva,
• Mikhail Strelkov,
• Daniil Zhogov,
• Konstantin Arutyunov,
• Vyacheslav Vdovin,
• Vladislav Stolyarov and
• Valerian Edelman

Beilstein J. Nanotechnol. 2025, 16, 1931–1941, doi:10.3762/bjnano.16.134

• . Microwave detectors, electron coolers, primary thermometers, and Aharonov–Bohm interferometers have been fabricated by various methods and measured at temperatures down to 100 mK. The manufacturing methods included Dolan-type shadow evaporation, Manhattan-type shadow evaporation, and magnetron sputtering

• deposition plants with thermal or e-beam evaporation. A much more available and simple deposition equipment is magnetron sputtering, but it provides only isotropic deposition, which is incompatible with anisotropic shadow evaporation. The practical solution for a magnetron sputtering is selective etching of

• different layers of superconducting aluminum and normal metal (e.g., copper). In case of chemical wet etching, this is achieved through an alkali and acid pair, for dry etching, chlorine and fluorine plasmas are used. Alternatively, in the case of magnetron sputtering and separate lithography, ion etching

Electrical, photocatalytic, and sensory properties of graphene oxide and polyimide implanted with low- and medium-energy silver ions

• Josef Novák,
• Eva Štěpanovská,
• Petr Malinský,
• Vlastimil Mazánek,
• Jan Luxa,
• Ulrich Kentsch and
• Zdeněk Sofer

Beilstein J. Nanotechnol. 2025, 16, 1794–1811, doi:10.3762/bjnano.16.123

• implantation primarily affects subsurface layers, leading to bulk modifications with more gradual structural changes and less surface sputtering. The details of the energy stopping powers at the depth of ion implantation are given in Figure 1. Elemental characterization by RBS and ERDA The elemental

• sputtering and the increase in surface roughness during implantation may result in a shallower experimental profile than predicted. Differences can also arise from the finite depth resolution of RBS, which is influenced by energy straggling and multiple scattering effects, leading to a broadening of the

• reduction in roughness is observable at any ion fluence relative to the reference condition. The lowest roughness in this instance was achieved with an ion fluence of 3.75 × 1012 cm−2. One possible explanation for the change in surface roughness measured by AFM may be surface sputtering. When there is

Ambient pressure XPS at MAX IV

• Mattia Scardamaglia,
• Ulrike Küst,
• Alexander Klyushin,
• Rosemary Jones,
• Jan Knudsen,
• Robert Temperton,
• Andrey Shavorskiy and
• Esko Kokkonen

Beilstein J. Nanotechnol. 2025, 16, 1677–1694, doi:10.3762/bjnano.16.118

• equipped with complementary instruments (e.g., mass spectrometers) mainly allowing researchers to probe gas phase products and connect this information easily to the XPS data acquired from the surface. Common in-vacuum surface preparation tools (e.g., Ar ion sputtering and sample annealing) are

Prospects of nanotechnology and natural products for cancer and immunotherapy

• Jan Filipe Andrade Santos,
• Marcela Bernardes Brasileiro,
• Pamela Danielle Cavalcante Barreto,
• Ligiane Aranha Rocha and
• José Adão Carvalho Nascimento Júnior

Beilstein J. Nanotechnol. 2025, 16, 1644–1667, doi:10.3762/bjnano.16.116

• nanoparticles Gold nanoparticles are nanometer-scale structures composed of a gold core with surface ligands, which can be structured into nanospheres, nanocages, nanorods, and nanoshells [146][147]. There are various manufacturing processes such as vacuum sputtering, biosynthesis, methods based on ultraviolet

Automated collection and categorisation of STM images and STS spectra with and without machine learning

• Dylan Stewart Barker and
• Adam Sweetman

Beilstein J. Nanotechnol. 2025, 16, 1367–1379, doi:10.3762/bjnano.16.99

• was operated using an RC5 Nanonis controller, with all experiments carried out in UHV (base pressure ≤5 × 10−11 mbar) cooled to 5 K. Gold and silver crystals (spl.eu) were prepared via repeated sputter–anneal cycles, sputtering under an argon pressure of ≈5 × 10−5 mbar, with a beam energy of 1.5 kV

Enhancing the photoelectrochemical performance of BiOI-derived BiVO₄ films by controlled-intensity current electrodeposition

• Huu Phuc Dang,
• Khanh Quang Nguyen,
• Nguyen Thi Mai Tho and
• Tran Le

Beilstein J. Nanotechnol. 2025, 16, 1289–1301, doi:10.3762/bjnano.16.94

• thickness. Alternatively, Liu et al. [16] employed RF sputtering with a single BiVO4 target, but the volatility of Bi in a vacuum environment often led to an imbalanced Bi/V ratio, requiring precise regulation of oxygen partial pressure. Gong et al. [17] utilized DC co-sputtering of Bi and V targets to

Crystalline and amorphous structure selectivity of ignoble high-entropy alloy nanoparticles during laser ablation in organic liquids is set by pulse duration

• Robert Stuckert,
• Felix Pohl,
• Oleg Prymak,
• Ulrich Schürmann,
• Christoph Rehbock,
• Lorenz Kienle and
• Stephan Barcikowski

Beilstein J. Nanotechnol. 2025, 16, 1141–1159, doi:10.3762/bjnano.16.84

• approach for the synthesis of colloidal HEA NPs is magnetron sputtering, though special requirements such as vacuum stable solvents (e.g., ionic liquids) limit its widespread use [32] and scalability is limited. Colloidal NP products have several advantages. For instance, in the fabrication of

• example in magnetron sputtering techniques. Colloidal HEA NPs by LSPC were first reported in 2019 by Waag et al. [35], where CrMnFeCoNi NPs were produced in ethanol, using a picosecond-pulsed laser for ablation (ps-LAL), yielding colloids of HEA NPs with a mean diameter below 10 nm and productivities of 3

Influence of ion beam current on the structural, optical, and mechanical properties of TiO₂ coatings: ion beam-assisted vs conventional electron beam evaporation

• Agata Obstarczyk and
• Urszula Wawrzaszek

Beilstein J. Nanotechnol. 2025, 16, 1097–1112, doi:10.3762/bjnano.16.81

• advantages including low manufacturing cost, high deposition rate, and the possibility to coat large surface areas [3][5][6]. However, the quality of the deposited coatings is relatively poor compared to, for example, magnetron sputtering, which guarantees the production of thin films with good coating

• -grown TiO2 films at room temperature, which is consistent with values reported in other studies [50][51]. However, it should be noted that the films in [49][50][51] were deposited using radio-frequency reactive and pulsed DC magnetron sputtering. These results indicate that the value of optical bandgap

• anatase and rutile phases, prepared by magnetron sputtering using continuous and pulsed gas flow processes were 0.17 and 0.24 eV, respectively. It was found that the lower value of Eu was obtained for the anatase thin film, which was directly related to the much more ordered structure of this layer, as

Ar⁺ implantation-induced tailoring of RF-sputtered ZnO films: structural, morphological, and optical properties

• Manu Bura,
• Divya Gupta,
• Arun Kumar and
• Sanjeev Aggarwal

Beilstein J. Nanotechnol. 2025, 16, 872–886, doi:10.3762/bjnano.16.66

• displays [5], solar cells [6], and light-emitting diodes [7]. There are numerous methods for synthesizing ZnO films, including pulsed laser deposition, spray pyrolysis, radio frequency (RF) sputtering, and sol–gel techniques. Here RF sputtering is preferred over other methods because it provides high

• are versatile in developing high-performance electro-optical and spintronic devices [18]. Experimental ZnO films are grown on a quartz substrate (1 × 1 cm2) using a ZnO (99.99%) target (2″ diameter and 3 mm thickness) in a radio frequency (RF) sputtering system. The quartz substrate is ultrasonically

• cleaned using acetone and, finally, isopropyl alcohol before the experiment. The sputtering chamber is pumped to a base pressure of 1.2 × 10−6 Torr; then a mixture of nitrogen and argon gas is introduced into the sputtering chamber with flows of 1.8 and 10.0 sccm, respectively. When the pressure inside

Synchrotron X-ray photoelectron spectroscopy study of sodium adsorption on vertically arranged MoS₂ layers coated with pyrolytic carbon

• Alexander V. Okotrub,
• Anastasiya D. Fedorenko,
• Anna A. Makarova,
• Veronica S. Sulyaeva,
• Yuliya V. Fedoseeva and
• Lyubov G. Bulusheva

Beilstein J. Nanotechnol. 2025, 16, 847–859, doi:10.3762/bjnano.16.64

• decomposition residues. Results and Discussion Figure 1a shows the schematic diagram of the synthesis route of a hybrid film consisting of MoS2 coated with PyC. A molybdenum layer is deposited on a SiO2/Si substrate by magnetron sputtering for a short time of 10 s. This layer interacts with sulfur vapor at a

• deposited on a SiO2/Si substrate using magnetron sputtering. Raman spectroscopy and SEM revealed the vertical orientation of the MoS2 layers relative to the substrate surface. According to XPS data, the surface of the MoS2 film is enriched with sulfur even after its annealing at 1073 K in hydrogen. PyC

• 16 h to form a 250–300 nm thick surface oxidized layer. The substrates were thoroughly cleaned using hot mineral acids and placed in a magnetron sputtering system (OJSC Vacuum Systems). The substrates were annealed at 573 K for 30 min in a vacuum at a pressure of 2 × 10−2 Pa. Immediately after this

Facile one-step radio frequency magnetron sputtering of Ni/NiO on stainless steel for an efficient electrode for hydrogen evolution reaction

• Ha Huu Do,
• Khac Binh Nguyen,
• Phuong N. Nguyen and
• Hoai Phuong Pham

Beilstein J. Nanotechnol. 2025, 16, 837–846, doi:10.3762/bjnano.16.63

• . In this study, Ni/NiO nanolayers were prepared on stainless steel (SS) via a facile one-step radio frequency magnetron sputtering with various O2 flow rates. The O2 flow rate not only changed the crystal phase but also affected the morphology and atomic ratio of materials, leading to optimized HER

• may introduce a facile and eco-friendly strategy for fabricating noble metal-free, efficient nanomaterials for electrocatalytic HER. Keywords: electrocatalysts; magnetron sputtering; nickel; nickel oxide; water electrolysis; Introduction The world is facing a critical challenge through the

• synthesizing electrode materials in recent years because they offer a cleaner pathway than solution-based synthetic processes [20][21][22]. Among vacuum deposition methods, magnetron sputtering has been widely applied in industrial applications for fabricating thin films because of its advantages, such as good

Colloidal few layered graphene–tannic acid preserves the biocompatibility of periodontal ligament cells

• Teissir Ben Ammar,
• Naji Kharouf,
• Dominique Vautier,
• Housseinou Ba,
• Nivedita Sudheer,
• Philippe Lavalle and
• Vincent Ball

Beilstein J. Nanotechnol. 2025, 16, 664–677, doi:10.3762/bjnano.16.51

• absolute ethanol. Finally, samples were dehydrated with hexamethylenedisilazane for 15 min and air-dried in a fume hood for 24 h and coated with a gold–palladium alloy using a Hummer JR sputtering device (Technics, CA, USA), creating a 12.5 nm thick gold layer (50 s at 20 mA sputter current). SEM

N₂⁺-implantation-induced tailoring of structural, morphological, optical, and electrical characteristics of sputtered molybdenum thin films

• Usha Rani,
• Kafi Devi,
• Divya Gupta and
• Sanjeev Aggarwal

Beilstein J. Nanotechnol. 2025, 16, 495–509, doi:10.3762/bjnano.16.38

• remarkable thermal stability, high melting point, and chemical inertness. In the present study, Mo thin films of different thicknesses (150, 200, 250, and 300 nm) have been deposited on Si(100) substrates via radio frequency sputtering in an argon atmosphere at room temperature. Some of these films have been

• the same nominal film thickness after implantation. Keywords: atomic force microscopy; grazing angle X-ray diffractometer; Keithley parametric analyzer; Mo thin films; RF sputtering; spectroscopic ellipsometry; Introduction Molybdenum thin films have garnered significant attention in diverse

• substrates under suitable conditions lead to improvements in functionality and address the needs of various cutting-edge industries [6][7]. For the deposition of Mo thin films, various techniques such as chemical vapor deposition, physical vapor deposition (RF sputtering and DC sputtering) [1][8][9], and

Performance optimization of a microwave-coupled plasma-based ultralow-energy ECR ion source for silicon nanostructuring

• Joy Mukherjee,
• Safiul Alam Mollick,
• Tanmoy Basu and
• Tapobrata Som

Beilstein J. Nanotechnol. 2025, 16, 484–494, doi:10.3762/bjnano.16.37

• ° and 72.5°) sputtering of surface atoms and their consecutive redistribution [9][39][40]. During ion bombardment, the unequal radius of curvature of the surface leads to unequal deposition of energy at different points on the surface, which results in unequal sputtering at those points. This generates

• surface instabilities, and consequently, the surface atoms are redistributed to stabilize the surface. These two effects jointly trigger nanopattern formation on the surface. A first theoretical model was proposed by Bradley and Harper [41], based on curvature-dependent sputtering of surface and near

• -surface atoms. Later, Carter and Vishnyakov introduced the concept of redistribution of surface atoms [42]. Several experiments have been carried out to understand other factors that contribute to nanopattern formation, such as preferential and differential sputtering [6][43], the role of surface and beam

ReactorAFM/STM – dynamic reactions on surfaces at elevated temperature and atmospheric pressure

• Tycho Roorda,
• Hamed Achour,
• Matthijs A. van Spronsen,
• Marta E. Cañas-Ventura,
• Sander B. Roobol,
• Willem Onderwaater,
• Mirthe Bergman,
• Peter van der Tuijn,
• Gertjan van Baarle,
• Johan W. Bakker,
• Joost W. M. Frenken and
• Irene M. N. Groot

Beilstein J. Nanotechnol. 2025, 16, 397–406, doi:10.3762/bjnano.16.30

• sputtering (3 μA, 1 kV, 30 min) at room temperature followed by annealing at 1000 K for 5 min. In Figure 5a,c, taken at 450 K under UHV conditions, we recognize steps in the vertical direction, which correspond to the Pd(100) steps. In the current signal image, the same steps are visible and defined more

• hydrocarbons CnH2n+2, with water as byproduct [24]. We have investigated the reaction on Co nanoparticles deposited on an Al2O3 support, grown on a NiAl(110) single crystal. The NiAl(110) surface has been prepared by repeated cycles of Ar-ion sputtering (3 μA, 1 kV, 30 min) at room temperature followed by

Tailoring of physical properties of RF-sputtered ZnTe films: role of substrate temperature

• Kafi Devi,
• Usha Rani,
• Arun Kumar,
• Divya Gupta and
• Sanjeev Aggarwal

Beilstein J. Nanotechnol. 2025, 16, 333–348, doi:10.3762/bjnano.16.25

• °C, and 600 °C using RF sputtering. The thickness of the films has been found to decrease from 940 nm at room temperature to 200 nm at 600 °C with increasing substrate temperature. The structural investigation using grazing incidence angle X-ray diffraction revealed that films deposited at room

• crystallinity, high transmittance, and high conductivity of the ZnTe film produced at 600 °C make it a suitable candidate for use as a buffer layer in solar cell applications. Keywords: bandgap; physical properties; RF sputtering; substrate temperature; ZnTe; Introduction The industrialization and burning of

• physical and chemical methods such as molecular beam epitaxy [8], electron-beam evaporation [9], thermal evaporation [10], pulsed laser deposition (PLD) [11], and RF sputtering [12]. RF sputtering is a versatile technique because various process parameters such as RF power, deposition time, substrate

Heterogeneous reactions in a HFCVD reactor: simulation using a 2D model

• Xochitl Aleyda Morán Martínez,
• José Alberto Luna López,
• Zaira Jocelyn Hernández Simón,
• Gabriel Omar Mendoza Conde,
• José Álvaro David Hernández de Luz and
• Godofredo García Salgado

Beilstein J. Nanotechnol. 2024, 15, 1627–1638, doi:10.3762/bjnano.15.128

• by different CVD techniques, but also by sputtering and ion implantation, among others [4][5]. The key parameters are particular for each of these techniques. Hot filament chemical vapor deposition (HFCVD) is an excellent alternative for obtaining SRO films. It is also very versatile and economical

Ion-induced surface reactions and deposition from Pt(CO)₂Cl₂ and Pt(CO)₂Br₂

• Mohammed K. Abdel-Rahman,
• Patrick M. Eckhert,
• Atul Chaudhary,
• Johnathon M. Johnson,
• Jo-Chi Yu,
• Lisa McElwee-White and
• D. Howard Fairbrother

Beilstein J. Nanotechnol. 2024, 15, 1427–1439, doi:10.3762/bjnano.15.115

• ion irradiation these PtCl2 or PtBr2 species experience ion-induced sputtering. The difference between halogen and Pt sputter rates leads to a critical ion dose at which only Pt remains in the film. A comparison of the different ion/precursor combinations studied revealed that this sequence of

• elementary reaction steps is invariant, although the rates of CO desorption and subsequent physical sputtering were greatest for the heaviest (Ar+) ions. The ability of IBID to produce pure Pt films was confirmed by AES and XPS analysis of thin film deposits created by Ar+/Pt(CO)2Cl2, demonstrating the

• emission, and physical sputtering of adsorbed or substrate atoms [21][22][25][31][36][37][38][39][40]. Ion-induced deposition can occur via a momentum/energy transfer process [21][25][41][42] that results in the decomposition of the precursor to form volatile species and an involatile deposit containing

Various CVD-grown ZnO nanostructures for nanodevices and interdisciplinary applications

• The-Long Phan,
• Le Viet Cuong,
• Vu Dinh Lam and
• Ngoc Toan Dang

Beilstein J. Nanotechnol. 2024, 15, 1390–1399, doi:10.3762/bjnano.15.112

• ], radio-frequency magnetron sputtering [47], pulsed laser ablation [48], and electrodeposition methods [49]. They have many application potentials in dye-sensitized solar cells [46], self-powered energy-harvesting devices [47], photocatalysts [48], and turbid lenses [50]. It has been suggested that the

The role of a tantalum interlayer in enhancing the properties of Fe₃O₄ thin films

• Hai Dang Ngo,
• Vo Doan Thanh Truong,
• Van Qui Le,
• Hoai Phuong Pham and
• Thi Kim Hang Pham

Beilstein J. Nanotechnol. 2024, 15, 1253–1259, doi:10.3762/bjnano.15.101

• promising applications. High-quality Fe3O4 thin films are a must to achieve the goals. In this report, Fe3O4 films on different substrates (SiO2/Si(100), MgO(100), and MgO/Ta/SiO2/Si(100)) were fabricated at room temperature with radio-frequency (RF) sputtering and annealed at 450 °C for 2 h. The

• sputtering; spintronic; Introduction Magnetite, also known as Fe3O4, has been extensively researched as one of the most common half-metallic materials in the field of spintronics for a considerable period of time. Magnetoelectronic devices are possible because of the material’s high Curie temperature of 860

• films [11][12][13]. The RF magnetron sputtering technique is extensively utilized because of its cost-effectiveness, simplicity, effectiveness, and capacity to produce Fe3O4 films with remarkable uniformity. The qualities of the films can be modified by manipulating parameters throughout the growth

A low-kiloelectronvolt focused ion beam strategy for processing low-thermal-conductance materials with nanoampere currents

• Annalena Wolff,
• Nico Klingner,
• William Thompson,
• Yinghong Zhou,
• Jinying Lin and
• Yin Xiao

Beilstein J. Nanotechnol. 2024, 15, 1197–1207, doi:10.3762/bjnano.15.97

• of energy loss to phonons and ionization and, therefore, heat is significantly (by a factor of six) lower for 5 keV ions than for 30 keV ion [17] as the incident ions have less initial energy to lose. The sputtering yield is reduced (by a factor of two) for 5 keV ions in comparison to 30 keV ions [17

• keV). By reducing the ion energy from 30 to 5 keV, the loss to heat can be reduced by a factor of six, while the sputtering speed is only reduced by a factor of two. The reduction in energy allows the operator to use nanoampere beam currents, which addresses the drawback of the previously reported

• program SRIM (Monte Carlo simulation) was used to determine the heat flux that 5 keV gallium ions (Ga+) induce in skin. 50000 ions were simulated for each incident ion energy. The methods “surface sputtering/monolayer collision steps” was selected as the calculation type. The plotting window size was

Local work function on graphene nanoribbons

• Daniel Rothhardt,
• Amina Kimouche,
• Tillmann Klamroth and
• Regina Hoffmann-Vogel

Beilstein J. Nanotechnol. 2024, 15, 1125–1131, doi:10.3762/bjnano.15.91

• -dependent measurements. Experimental The experiments were conducted in an Omicron VT-SFM system (base pressure 2 × 10−10 mbar). The Au(111) single crystal substrate (Mateck GmbH) was cleaned by repeated Ar ion sputtering–annealing cycles. The cleanliness of the samples was checked by SFM measurements. Then

• (f0 = 292 kHz, cL = 41 N/m) were used for imaging in the frequency modulation (FM) mode operated by a Nanonis electronic system. The tips were cleaned by sputtering (Ar pressure 5 × 10−3 Pa, energy 1 keV, 15 min) and annealing up to 375 K for 1–5 h (pressure below 1 × 10−7 Pa) prior to measurement

Effect of wavelength and liquid on formation of Ag, Au, Ag/Au nanoparticles via picosecond laser ablation and SERS-based detection of DMMP

• Sree Satya Bharati Moram,
• Chandu Byram and
• Venugopal Rao Soma

Beilstein J. Nanotechnol. 2024, 15, 1054–1069, doi:10.3762/bjnano.15.86

• synthesis in solution (LASiS), and sputtering [1]. The LASiS technique has been proven to be cost-effective in producing various shapes of NPs with distinct size distributions in a short time (a few minutes). It offers many advantages including high purity, minimal contamination, and precise control over NP

• distribution of NPs on a FP was analyzed using the INCA software with a field-emission scanning electron microscope (FESEM, Carl Zeiss Ultra 55). Samples were prepared by drop casting 10 µL of NPs onto a FP, followed by sputtering a thin conductive layer of gold onto the FP to facilitate lower magnification

Interface properties of nanostructured carbon-coated biological implants: an overview

• Mattia Bartoli,
• Francesca Cardano,
• Erik Piatti,
• Stefania Lettieri,
• Andrea Fin and
• Alberto Tagliaferro

Beilstein J. Nanotechnol. 2024, 15, 1041–1053, doi:10.3762/bjnano.15.85

• which the deposition occurs. During electron beam evaporation, an electron beam is used to vaporize the target material, while during sputtering, a high-energy ion beam is used to bombard the target. In both cases, atoms are ejected from the target and subsequently condense onto the substrate. The