Piezotronic effect in AlGaN/AlN/GaN heterojunction nanowires used as a flexible strain sensor

• Jianqi Dong,
• Liang Chen,
• Yuqing Yang and
• Xingfu Wang

Beilstein J. Nanotechnol. 2020, 11, 1847–1853, doi:10.3762/bjnano.11.166

• synthesize AlGaN/AlN/GaN heterojunction NWs with controllable size. A single NW is transferred to a flexible poly(ethylene terephthalate) substrate and fixed by indium tin oxide electrodes to form an ohmic contact for the strain sensor. An external mechanical stress is introduced to study the performance of

• (EC) wet etching, to prepare AlGaN/AlN/GaN heterojunction NWs with a controllable size. After the lift-off, a single NW is transferred to a flexible poly(ethylene terephthalate) (PET) substrate and is fixed by indium tin oxide (ITO) electrodes to form an ohmic contact for the strain sensor. Under

Structural and electronic properties of SnO₂ doped with non-metal elements

• Jianyuan Yu,
• Yingeng Wang,
• Yan Huang,
• Xiuwen Wang,
• Jing Guo,
• Jingkai Yang and
• Hongli Zhao

Beilstein J. Nanotechnol. 2020, 11, 1321–1328, doi:10.3762/bjnano.11.116

• research works has been done examining different doping elements. Doped tin oxide thin film have been widely used in the fields of thin film solar cell electrodes, electronic display devices, and gas sensors. Also doped SnO2 been used for energy-saving low-emissivity glass coatings due to low resistivity

Transition from freestanding SnO₂ nanowires to laterally aligned nanowires with a simulation-based experimental design

• Jasmin-Clara Bürger,
• Sebastian Gutsch and
• Margit Zacharias

Beilstein J. Nanotechnol. 2020, 11, 843–853, doi:10.3762/bjnano.11.69

• laterally aligned nanowires, indicating that the nanowire growth takes place in a transient period of the gas exchange. Keywords: finite element method simulation; laterally aligned nanowires; planar growth; tin oxide; vapor–liquid–solid nanowire growth; Introduction Since the first reports in 1964 by

• result, Choi et al. were able to measure an improved sensitivity for gas sensors made of tin oxide nanowires (SnO2 NWs) in comparison with powder-based SnO2 thin films [9]. For the use of NWs in electronic and sensor devices, freestanding NWs often have to be scratched off of the growth substrate

Hexagonal boron nitride: a review of the emerging material platform for single-photon sources and the spin–photon interface

• Stefania Castelletto,
• Faraz A. Inam,
• Shin-ichiro Sato and
• Alberto Boretti

Beilstein J. Nanotechnol. 2020, 11, 740–769, doi:10.3762/bjnano.11.61

Structural optical and electrical properties of a transparent conductive ITO/Al–Ag/ITO multilayer contact

• Aliyu Kabiru Isiyaku,
• Ahmad Hadi Ali and
• Nafarizal Nayan

Beilstein J. Nanotechnol. 2020, 11, 695–702, doi:10.3762/bjnano.11.57

• Science, Kaduna State University, P.M.B 2339, Kaduna State, Nigeria Microelectronic and Nanotechnology Shamsuddin Research Centre (MiNT-SRC), Universiti Tun Hussein Onn Malaysia, 86400 Parit Raja, Batu Pahat, Johor, Malaysia 10.3762/bjnano.11.57 Abstract Indium tin oxide (ITO) is a widely used material

• × 10−3 Ω−1). These highly conductive and transparent ITO films with Al–Ag interlayer can be a promising contact for low-resistance optoelectronics devices. Keywords: annealing; DC sputtering; figure of merit; indium tin oxide (ITO); multilayer structure; RF sputtering; Introduction Transparent

• conducting oxides (TCO) thin films have been receiving much attention regarding their use as contacts in several optoelectronic devices such as LEDs [1], solar cells [2] and flat panel displays [3]. Indium tin oxide (ITO) is the most commonly used TCO for industrial and laboratory applications due to its

Implementation of data-cube pump–probe KPFM on organic solar cells

• Benjamin Grévin,
• Olivier Bardagot and
• Renaud Demadrille

Beilstein J. Nanotechnol. 2020, 11, 323–337, doi:10.3762/bjnano.11.24

• levels of holes and electrons upon illumination, symbolized by dotted lines. (b) Organic BHJ solar cell and experimental configuration. The sample is illuminated in backside geometry. The transparent anode, the hole collecting electrode made of indium tin oxide coated with PEDOT:PSS, is grounded. The

Polyvinylpyrrolidone as additive for perovskite solar cells with water and isopropanol as solvents

• Chen Du,
• Shuo Wang,
• Xu Miao,
• Wenhai Sun,
• Yu Zhu,
• Chengyan Wang and
• Ruixin Ma

Beilstein J. Nanotechnol. 2019, 10, 2374–2382, doi:10.3762/bjnano.10.228

• cell (iPSC), Pengcheng Zhou et al. managed to achieve a signifanct boost in efficiency [30]. The photovoltaic properties of inverted polymer solar cells using a PVP-modified indium tin oxide (ITO) layer as the electron-collecting electrode were reported on by J. W. Shim and co-workers [31]. In this

Nontoxic pyrite iron sulfide nanocrystals as second electron acceptor in PTB7:PC₇₁BM-based organic photovoltaic cells

• Olivia Amargós-Reyes,
• José-Luis Maldonado,
• Omar Martínez-Alvarez,
• María-Elena Nicho,
• José Santos-Cruz,
• Juan Nicasio-Collazo,
• Irving Caballero-Quintana and
• Concepción Arenas-Arrocena

Beilstein J. Nanotechnol. 2019, 10, 2238–2250, doi:10.3762/bjnano.10.216

• and synthesis of FeS2 nanocrystals All chemicals were used as received without further purification. For FeS2 synthesis, iron(II) chloride, octadecylamine and diphenyl ether were acquired from Sigma-Aldrich. For OPV fabrication, indium tin oxide (ITO) covered glass substrates (10 Ω/sq, ≈165 nm

• :PC71BM:FeS2/PFN/Field’s metal (FM) fabrication The OPV devices were fabricated as follows (Figure 1a): Indium tin oxide (ITO) covered glass substrates were cut (≈1.8 cm × 1.8 cm) and ultrasonically cleaned sequentially for about 20 min in a detergent solution, distilled water and ethanol and dried in an oven

Materials nanoarchitectonics at two-dimensional liquid interfaces

• Katsuhiko Ariga,
• Michio Matsumoto,
• Taizo Mori and
• Lok Kumar Shrestha

Beilstein J. Nanotechnol. 2019, 10, 1559–1587, doi:10.3762/bjnano.10.153

• confirmed by steady-state optical spectroscopy. Photovoltaic cells with one-dimensional C60 nanorods as active layer sandwiched by an indium tin oxide anode and an aluminium cathode exhibited enhanced photovoltaic capabilities. It also led to a significant enhancement of photogenerated charge carriers as

Rapid thermal annealing for high-quality ITO thin films deposited by radio-frequency magnetron sputtering

• Petronela Prepelita,
• Ionel Stavarache,
• Doina Craciun,
• Florin Garoi,
• Catalin Negrila,
• Beatrice Gabriela Sbarcea and
• Valentin Craciun

Beilstein J. Nanotechnol. 2019, 10, 1511–1522, doi:10.3762/bjnano.10.149

• , P.O. Box MG-7, Magurele 077125, Ilfov, Romania ICPE-CA, Splaiul Unirii 313, Sector 3, 74204, Bucharest, Romania Dentix MILLENNIUM SRL, Sabareni-Ilfov, Romania 10.3762/bjnano.10.149 Abstract In this work, rapid thermal annealing (RTA) was applied to indium tin oxide (ITO) films in ambient atmosphere

• treatment on the ITO chemical composition. Using a Tauc plot, values of the optical band gap ranging from 3.17 to 3.67 eV were estimated. These values depend on the heat treatment and the thickness of the sample. Highly conductive indium tin oxide thin films (ρ = 7.4 × 10−5 Ω cm) were obtained after RTA

• treatment in an open atmosphere. Such films could be used to manufacture transparent contact electrodes for solar cells. Keywords: conductive transparent electrodes; indium tin oxide (ITO) films; optical properties; radio-frequency magnetron sputtering (rfMS); rapid thermal annealing (RTA); Introduction

Gas sensing properties of individual SnO₂ nanowires and SnO₂ sol–gel nanocomposites

• Alexey V. Shaposhnik,
• Dmitry A. Shaposhnik,
• Sergey Yu. Turishchev,
• Olga A. Chuvenkova,
• Stanislav V. Ryabtsev,
• Alexey A. Vasiliev,
• Xavier Vilanova,
• Francisco Hernandez-Ramirez and
• Joan R. Morante

Beilstein J. Nanotechnol. 2019, 10, 1380–1390, doi:10.3762/bjnano.10.136

• occurs, the thin dioxide nanowires begin to crystallize. The diameter of the growing wires is defined by the diameter of the initial tin nanodrops. Such a process, taking place without hetero-element clusters, is called a self-catalytic process. A nanodrop of liquid metal with dissolved tin oxide is

• glacial acetic acid. A surplus of hydrogen peroxide was added to the solution: where NH3·H2O was added dropwise to cause hydrolytic precipitation of tin oxide as follows: The obtained colloid was precipitated by centrifugation, dried and annealed. Tin dioxide nanopowder was formed as a result of tin acid

Electroluminescence and current–voltage measurements of single-(In,Ga)N/GaN-nanowire light-emitting diodes in a nanowire ensemble

• David van Treeck,
• Johannes Ledig,
• Gregor Scholz,
• Jonas Lähnemann,
• Mattia Musolino,
• Abbes Tahraoui,
• Oliver Brandt,
• Andreas Waag,
• Henning Riechert and
• Lutz Geelhaar

Beilstein J. Nanotechnol. 2019, 10, 1177–1187, doi:10.3762/bjnano.10.117

• solution of hydrogen silsesquioxane (HSQ). Subsequently, the upper 70 nm of the p-type segments of the NWs were uncovered by dry etching with CHF3 and a 120 nm thick indium tin oxide (ITO) layer was sputtered onto the NW tips. Finally, Ti/Au bonding pads and an Al/Au n-type contact were deposited on the

Concurrent nanoscale surface etching and SnO₂ loading of carbon fibers for vanadium ion redox enhancement

• Jun Maruyama,
• Shohei Maruyama,
• Tomoko Fukuhara,
• Toru Nagaoka and
• Kei Hanafusa

Beilstein J. Nanotechnol. 2019, 10, 985–992, doi:10.3762/bjnano.10.99

• coated with CSnPc is similar to that without the coating. After the thermal oxidation of TGP-CSnPc at 550 °C, tin-oxide nanoparticles were generated on the surface. In addition, there are many shallow elongated dents along the fiber axis, which were generated by the fine surface etching. Although a clear

• TGP-CSnPc-650Air, which is in agreement with the FESEM image. Surface species The presence of tin oxide on the thermally oxidized surface of the CSnPc-coated carbon fibers was confirmed by XPS. It should be noted here that the Sn content was below the detection limit for the elemental mapping by

• drastic change in the surface structure was attributed to a temperature-dependent catalytic effect of the tin-oxide nanoparticles on the carbon surface oxidation leading to fine etching. A significant enhancement of the activity for the V2+/3+ redox reactions was also observed at TGP-CSnPc-550Air. The

Review of time-resolved non-contact electrostatic force microscopy techniques with applications to ionic transport measurements

• Aaron Mascaro,
• Yoichi Miyahara,
• Tyler Enright,
• Omur E. Dagdeviren and
• Peter Grütter

Beilstein J. Nanotechnol. 2019, 10, 617–633, doi:10.3762/bjnano.10.62

Site-specific growth of oriented ZnO nanocrystal arrays

• Rekha Bai,
• Dinesh K. Pandya,
• Sujeet Chaudhary,
• Veer Dhaka,
• Vladislav Khayrudinov,
• Jori Lemettinen,
• Christoffer Kauppinen and
• Harri Lipsanen

Beilstein J. Nanotechnol. 2019, 10, 274–280, doi:10.3762/bjnano.10.26

• University, Tietotie 3, 02150 Espoo, Finland 10.3762/bjnano.10.26 Abstract We report on the growth of ZnO nanocrystals having a hexagonal, prismatic shape, sized 700 nm × 600 nm, on bare indium tin oxide (ITO) substrates. The growth is induced by a low ion flux and involves a low-temperature

• patterned substrates and a cost-effective growth technique. In particular, we demonstrate the growth of hexagonal faceted self-assembled twin ZnO NCs on bare indium tin oxide (ITO) substrate via a facile low temperature electrodeposition technique that has the potential of yielding good crystal quality with

• grow ZnO nanocrystals on both bare and on an array of pores patterned on the polymer-coated indium-doped tin oxide (ITO) conducting substrates. The patterning process for the polymer, poly(Disperse Red 1 acrylate), involves laser interference lithography and oxygen plasma etching and has been reported

Nanoporous water oxidation electrodes with a low loading of laser-deposited Ru/C exhibit enhanced corrosion stability

• Sandra Haschke,
• Dmitrii Pankin,
• Vladimir Mikhailovskii,
• Maïssa K. S. Barr,
• Adriana Both-Engel,
• Alina Manshina and
• Julien Bachmann

Beilstein J. Nanotechnol. 2019, 10, 157–167, doi:10.3762/bjnano.10.15

• , microscope cover glasses provided with approx. 700 nm of heat-treated indium tin oxide (ITO, which serves as the electrical contact in subsequent electrochemical measurements) are placed for laser-induced coating on a microcuvette filled with the precursor solution. An unfocused He-Cd laser beam irradiates

• cover glasses (borosilicate glass, 18 × 18 mm2, 0.13–0.16 mm thickness) were purchased from Marienfeld-Superior. Aluminum plates (99.99%) for the anodization procedure were supplied by Smart-Membranes. The indium tin oxide sputter target (99.99%) was purchased from AEM. Preparation of planar samples For

• planar electrodes microscope cover glasses were ultrasonically cleaned with ethanol and water, then dried in a flow of nitrogen. In a next step, the slides were sputter-coated with approx. 700 nm of indium tin oxide (ITO) in radio frequency (RF) mode in a reactor from Torr International Inc. The

Zn/F-doped tin oxide nanoparticles synthesized by laser pyrolysis: structural and optical properties

• Florian Dumitrache,
• Iuliana P. Morjan,
• Elena Dutu,
• Ion Morjan,
• Claudiu Teodor Fleaca,
• Monica Scarisoreanu,
• Alina Ilie,
• Marius Dumitru,
• Cristian Mihailescu,
• Adriana Smarandache and
• Gabriel Prodan

Beilstein J. Nanotechnol. 2019, 10, 9–21, doi:10.3762/bjnano.10.2

• dopant concentration). Keywords: laser pyrolysis; nanoparticles; optical bandgap; Zn/F-doped SnO2; Introduction Recently, there has been growing interest in the field of transparent conducting oxides and wide bandgap oxide nanocrystalline materials such as tin oxide (SnO2). It is generally agreed that

• reduced bandgap of tin oxide nanoparticles by introduction of defects to the crystal lattice is ≈0.7 eV [4]. Generally, the doping of these semiconducting oxides with specific cations or anions is performed in order to increase their electrical conductivity while maintaining a high optical transparency in

• the visible range [5][6]. For the case of tin oxide, a comparative study using halogen anions (F, Cl, Br, I) as dopants shows that the fluorine anion induces the formation of thin films and exhibits the best performance in terms of transparency and conductivity [7]. Today, the most used material for

Graphene-enhanced metal oxide gas sensors at room temperature: a review

• Dongjin Sun,
• Yifan Luo,
• Marc Debliquy and
• Chao Zhang

Beilstein J. Nanotechnol. 2018, 9, 2832–2844, doi:10.3762/bjnano.9.264

• achieved at all [19][20]. Metal-oxide semiconductors (MOS), including tin oxide (SnO2), titanium dioxide (TiO2), zinc oxide (ZnO), copper oxide (CuO), tungsten oxide (WO3), indium oxide (In2O3), ferric oxide (Fe2O3) and cobalt oxide (Co3O4) are important materials for gas sensors [21][22][23][24][25][26

Oriented zinc oxide nanorods: A novel saturable absorber for lasers in the near-infrared

• Pavel Loiko,
• Tanujjal Bora,
• Josep Maria Serres,
• Haohai Yu,
• Magdalena Aguiló,
• Francesc Díaz,
• Uwe Griebner,
• Valentin Petrov,
• Xavier Mateos and
• Joydeep Dutta

Beilstein J. Nanotechnol. 2018, 9, 2730–2740, doi:10.3762/bjnano.9.255

• compact laser designs (e.g., microchip or waveguide lasers) [22]. ZnO NRs have not been explored as saturable absorbers, yet. Singh et al. studied Mn2+-doped ZnO NRs grown from an aqueous solution on indium tin oxide (ITO) substrates which exhibited saturable absorption (optical bleaching) at 0.532 µm

Thickness-dependent photoelectrochemical properties of a semitransparent Co₃O₄ photocathode

• Malkeshkumar Patel and
• Joondong Kim

Beilstein J. Nanotechnol. 2018, 9, 2432–2442, doi:10.3762/bjnano.9.228

• heterojunctions. Experimental Sample fabrication: The photocathode was composed of Co3O4/fluorine-doped tin oxide (FTO)/glass. The general synthesis of Kirkendall diffusion grown Co3O4 film was analogue to our previous study [20]. In brief, a commercial fluorine-doped tin oxide (FTO)-coated glass (735167, Sigma

Directional light beams by design from electrically driven elliptical slit antennas

• Shuiyan Cao,
• Eric Le Moal,
• Quanbo Jiang,
• Aurélien Drezet,
• Serge Huant,
• Jean-Paul Hugonin,
• Gérald Dujardin and
• Elizabeth Boer-Duchemin

Beilstein J. Nanotechnol. 2018, 9, 2361–2371, doi:10.3762/bjnano.9.221

• , conducting indium tin oxide (ITO) layer (purchased from SOLEMS, Palaiseau, France). ITO is used to electrically connect the inner gold area delineated by the elliptical slit to the rest of the gold film as is required for applying the tip–sample bias voltage for the STM measurements. The elliptical slits are

Performance analysis of rigorous coupled-wave analysis and its integration in a coupled modeling approach for optical simulation of complete heterojunction silicon solar cells

• Ziga Lokar,
• Benjamin Lipovsek,
• Marko Topic and
• Janez Krc

Beilstein J. Nanotechnol. 2018, 9, 2315–2329, doi:10.3762/bjnano.9.216

• (EVA) encapsulation (Figure 3). The front of the basic solar cell structure consists of transparent conductive oxide (e.g., indium tin oxide (ITO)), a thin p-doped and intrinsic amorphous silicon (a-Si:H) layer for electrical passivation, a slightly n-doped crystalline Si (c-Si) wafer (absorber), and

Know your full potential: Quantitative Kelvin probe force microscopy on nanoscale electrical devices

• Amelie Axt,
• Ilka M. Hermes,
• Victor W. Bergmann,
• Niklas Tausendpfund and
• Stefan A. L. Weber

Beilstein J. Nanotechnol. 2018, 9, 1809–1819, doi:10.3762/bjnano.9.172

• , visualized by the red and blue line, respectively. The cell consisted of a fluorine-doped tin oxide (FTO) electrode, a compact TiO2 electron extraction layer and a mesoscopic TiO2 layer (meso) filled with the perovskite light-absorber methylammonium lead iodide (MAPI). The mesoscopic layer was followed by a

Toward the use of CVD-grown MoS₂ nanosheets as field-emission source

• Geetanjali Deokar,
• Nitul S. Rajput,
• Junjie Li,
• Francis Leonard Deepak,
• Wei Ou-Yang,
• Nicolas Reckinger,
• Carla Bittencourt,
• Jean-Francois Colomer and
• Mustapha Jouiad

Beilstein J. Nanotechnol. 2018, 9, 1686–1694, doi:10.3762/bjnano.9.160

• on the NSs transferred onto a conducting fluorine-tin-oxide (FTO) substrate. Experimental Sample preparation The NSs were grown on SiO2/Si substrates via double sulfurization of a sputter-deposited 50 nm Mo film using an ambient-pressure CVD technique. Flushing of the quartz tube using Ar gas stream

Photoluminescence of CdSe/ZnS quantum dots in nematic liquid crystals in electric fields

• Margarita A. Kurochkina,
• Elena A. Konshina and
• Daria Khmelevskaia

Beilstein J. Nanotechnol. 2018, 9, 1544–1549, doi:10.3762/bjnano.9.145

• of two quartz substrates with a fixed gap of about 33 μm. Both substrates were coated by cathode sputtering with transparent conductive electrodes based on indium tin oxide. Orienting layers of rubbed polyimide and chromolane were used to obtain a planar or vertical orientation of the LC molecules