DFT calculations of the structure and stability of copper clusters on MoS₂

• Cara-Lena Nies and
• Michael Nolan

Beilstein J. Nanotechnol. 2020, 11, 391–406, doi:10.3762/bjnano.11.30

• enable the use of 2D materials in technology applications, processes have been developed to grow 2D materials via chemical vapour deposition (CVD) [16][17] and atomic layer deposition (ALD) [18][19]. The films prepared via thin film deposition were comparable in performance to materials obtained via

• exfoliation. However, the scalability of CVD and ALD processes makes 2D materials grown via these methods more realistic for a wider range of applications [4]. Transition metal dichalcogenides (TMDs) are of particular interest as they exhibit a large variety of properties. TMDs such as MoS2 are intrinsic

Synthesis of amorphous and graphitized porous nitrogen-doped carbon spheres as oxygen reduction reaction catalysts

• Maximilian Wassner,
• Markus Eckardt,
• Andreas Reyer,
• Thomas Diemant,
• Michael S. Elsaesser,
• R. Jürgen Behm and
• Nicola Hüsing

Beilstein J. Nanotechnol. 2020, 11, 1–15, doi:10.3762/bjnano.11.1

• are chemical vapor deposition (CVD) and arc discharge methods for N-doped graphene, graphite, and carbon nanotubes [9]. Most commonly, the post-synthetic approach is carried out by thermal treatment of carbon in ammonia atmosphere, typically leading to surface N-doping. A variety of N bonding

Facile synthesis of carbon nanotube-supported NiO//Fe₂O₃ for all-solid-state supercapacitors

• Shengming Zhang,
• Xuhui Wang,
• Yan Li,
• Xuemei Mu,
• Yaxiong Zhang,
• Jingwei Du,
• Guo Liu,
• Xiaohui Hua,
• Yingzhuo Sheng,
• Erqing Xie and
• Zhenxing Zhang

Beilstein J. Nanotechnol. 2019, 10, 1923–1932, doi:10.3762/bjnano.10.188

• Discussion Figure 1 shows the process of synthesizing cathode and anode, and finally, the asymmetric supercapacitor. The details can be seen in the Experimental section. Anode material CC-CNT@Fe2O3 CNTs were grown on CC by chemical vapour deposition (CVD). As shown in Figure 2a, CNTs grow homogeneously with

• CVD with a pretreatment of the CC. Typically, the CC (1 × 1 cm2, 11 mg) was treated with a mixture of H2SO4/HNO3 (3:1 volume ratio) at 70 °C for 2 h and then cleaned by sonication in deionized water and finally kept in a drying oven for 12 h. Afterward, the CC was immersed in catalyst, which consists

• of 10 mM Ni(NO3)2 and 1 mM Al(NO3)3 in alcoholic solution before CVD treatment. Flow rates of C2H2, H2, and Ar were set to 10, 20, and 50 sccm. The growth time was 30 min at 700 °C, and the mass loading of CNTs was 1.30 to 1.70 mg·cm−2. The as-prepared CNTs on CC (CC-CNT) was subsequently treated by

Hierarchically structured 3D carbon nanotube electrodes for electrocatalytic applications

• Pei Wang,
• Katarzyna Kulp and
• Michael Bron

Beilstein J. Nanotechnol. 2019, 10, 1475–1487, doi:10.3762/bjnano.10.146

• a glassy carbon (GC) substrate in a sequence of electrodeposition and chemical vapor deposition (CVD) steps as follows: Primary CNTs are grown over electrodeposited iron by CVD followed by a second Fe deposition and finally the CVD growth of secondary CNTs. The prepared 3-dimensional CNT structures

• were additionally characterized by Raman spectroscopy. In this way it is demonstrated that by varying the parameters during the electrodeposition and CVD steps, a tuning of the structural parameters of the hierarchical electrodes is possible. The suitability of the hierarchical electrodes for

• the preparation of hierarchically structured CNTs on glassy carbon (GC) based on a sequential CNT growth over electrodeposited Fe nanoparticles via chemical vapor deposition (CVD) with cyclohexane as the carbon precursor. Pt electrodeposition onto these hierarchical structures leads to active

Growth of lithium hydride thin films from solutions: Towards solution atomic layer deposition of lithiated films

• Ivan Kundrata,
• Karol Fröhlich,
• Lubomír Vančo,
• Matej Mičušík and
• Julien Bachmann

Beilstein J. Nanotechnol. 2019, 10, 1443–1451, doi:10.3762/bjnano.10.142

• . The large crystal seen is attributed to CVD growth in bubbles. The rough film is visible around the crystal. SEM of a Si sample cleaved after deposition. The film thickness was estimated to be roughly 45 nm. Growth curve obtained from spectroscopic ellipsometry. The thickness is relative to the SEM

Alloyed Pt₃M (M = Co, Ni) nanoparticles supported on S- and N-doped carbon nanotubes for the oxygen reduction reaction

• Stéphane Louisia,
• Yohann R. J. Thomas,
• Pierre Lecante,
• Marie Heitzmann,
• M. Rosa Axet,
• Pierre-André Jacques and
• Philippe Serp

Beilstein J. Nanotechnol. 2019, 10, 1251–1269, doi:10.3762/bjnano.10.125

• , 31055 Toulouse Cedex 4, France 10.3762/bjnano.10.125 Abstract Sulfur- (S-CNT) and nitrogen-doped (N-CNT) carbon nanotubes have been produced by catalytic chemical vapor deposition (c-CVD) and were subject to an annealing treatment. These CNTs were used as supports for small (≈2 nm) Pt3M (M = Co or Ni

• performance has been aged following a recommended accelerated stress test (AST) cycle for catalyst support corrosion. Results and Discussion Synthesis and characterization of the CNTs and Pt3M/CNT Three kinds of CNTs have been produced by catalytic chemical vapor deposition (c-CVD): undoped (CNTs), N-doped (N

• MEA is then better. This validates the robustness of the synthesized catalyst. Conclusion In summary, a series of undoped, S- and N-doped CNTs have been synthetized by c-CVD. These carbon materials have been used together with an ionic liquid as a support structure for bimetallic Pt3Co and Pt3Ni NPs

Electronic and magnetic properties of doped black phosphorene with concentration dependence

• Ke Wang,
• Hai Wang,
• Min Zhang,
• Yan Liu and
• Wei Zhao

Beilstein J. Nanotechnol. 2019, 10, 993–1001, doi:10.3762/bjnano.10.100

• experimentally demonstrated that substitutional doping of TMDs could be achieved by filling the vacancies observed in CVD-grown monolayer TMDs [18]. Liu et al. [19] prepared epitaxial copper-doped ZnO films and observed that the substitution of Cu for Zn and the presence of strong Cu–Zn–O bonds are necessary for

Direct growth of few-layer graphene on AlN-based resonators for high-sensitivity gravimetric biosensors

• Jimena Olivares,
• Teona Mirea,
• Lorena Gordillo-Dagallier,
• Bruno Marco,
• José Miguel Escolano,
• Marta Clement and
• Enrique Iborra

Beilstein J. Nanotechnol. 2019, 10, 975–984, doi:10.3762/bjnano.10.98

• -based solidly mounted resonators (SMR) using a low-temperature chemical vapour deposition (CVD) process assisted by Ni catalysts, and its effective bio-functionalization with antibodies. The SMRs are manufactured on top of fully insulating AlN/SiO2 acoustic mirrors able to withstand the temperatures

• reached during the CVD growth of graphene (up to 650 °C). The active AlN films, purposely grown with the c-axis tilted, effectively excite shear modes displaying excellent in-liquid performance, with electromechanical coupling and quality factors of around 3% and 150, respectively, which barely vary after

• of their characteristics and then functionalized to manufacture gravimetric biosensors, which eliminates the need to use complex transfer methods. Defect-free few-layer graphene was selectively grown through a low-temperature (650 °C) CVD process on Ni [16] thin-film catalysts previously evaporated

Hydrophilicity and carbon chain length effects on the gas sensing properties of chemoresistive, self-assembled monolayer carbon nanotube sensors

• Juan Casanova-Cháfer,
• Carla Bittencourt and
• Eduard Llobet

Beilstein J. Nanotechnol. 2019, 10, 565–577, doi:10.3762/bjnano.10.58

• . Experimental Functionalization of carbon nanotubes Multiwall carbon nanotubes (MWCNTs) functionalized with carboxylic acid (COOH) were purchased from Nanocyl S.A. (Belgium). These nanotubes were produced by a catalytic chemical vapor deposition (c-CVD method) and purified to greater than 95%. The average

Direct observation of the CVD growth of monolayer MoS₂ using in situ optical spectroscopy

• Claudia Beatriz López-Posadas,
• Yaxu Wei,
• Wanfu Shen,
• Daniel Kahr,
• Michael Hohage and
• Lidong Sun

Beilstein J. Nanotechnol. 2019, 10, 557–564, doi:10.3762/bjnano.10.57

• dichalcogenide (2D TMDC) materials. However, it is very challenging to carry out such studies during chemical vapor deposition (CVD). Here, we report the first, real time, in situ study of the CVD growth of 2D TMDCs. More specifically, the CVD growth of a molybdenum disulfide (MoS2) monolayer on sapphire

• the temperature distribution in the CVD reactor has been revealed. Our results demonstrate the great potential of real time, in situ optical spectroscopy to assist the precisely controlled growth of 2D semiconductor materials. Keywords: chemical vapor deposition (CVD); in situ differential optical

• synthesizing large-area 2D TMDCs have been reported, including mechanical exfoliation, sulphurization of metal thin films, mass transport, molecular beam epitaxy (MBE) and chemical vapor deposition (CVD) [6][7]. In particular, CVD is considered to be an attractive and very promising approach for large-scale

Choosing a substrate for the ion irradiation of two-dimensional materials

• Egor A. Kolesov

Beilstein J. Nanotechnol. 2019, 10, 531–539, doi:10.3762/bjnano.10.54

• , initially recognized due to its catalytic effect in the CVD synthesis of graphene. SiO2, the most common material for supporting monolayers (usually in the SiO2/Si alignment), is in turn a typical dielectric, mostly referred to as introducing a comparatively small effect on the properties of 2D materials

Nanocomposite–parylene C thin films with high dielectric constant and low losses for future organic electronic devices

• Marwa Mokni,
• Gianluigi Maggioni,
• Abdelkader Kahouli,
• Sara M. Carturan,
• Walter Raniero and
• Alain Sylvestre

Beilstein J. Nanotechnol. 2019, 10, 428–441, doi:10.3762/bjnano.10.42

• Nazionale di Fisica Nucleare, Laboratori Nazionali di Legnaro, Viale dell’Università 2, 35020 Legnaro (PD), Italy 10.3762/bjnano.10.42 Abstract Nanocomposite–parylene C (NCPC) thin films were deposited with a new technique based on the combination of chemical vapor deposition (CVD) for parylene C

• voltages of TFTs [2]. Unfortunately these approaches can not be used when parylene C (PPXC) is chosen as gate dielectric as the only proven process for producing high-quality PPXC layers is chemical vapor deposition (CVD). Parylene C has emerged as a particularly interesting material for organic electronic

• increase the dielectric constant of NCPC without degrading its dielectric losses. In this context, this work presents a new strategy to synthesize nanocomposite parylene C materials by a combination of two processes, CVD and RF-magnetron sputtering. The NCPC properties are analyzed in detail by different

Biocompatible organic–inorganic hybrid materials based on nucleobases and titanium developed by molecular layer deposition

• Leva Momtazi,
• Henrik H. Sønsteby and
• Ola Nilsen

Beilstein J. Nanotechnol. 2019, 10, 399–411, doi:10.3762/bjnano.10.39

• enables control of cell–surface interactions, which plays a major role in controlling the bioactivity of solid surfaces. Biocompatibility can be enhanced by coating the surface using various thin film deposition techniques such as chemical vapor deposition (CVD), physical vapor deposition (PVD) or atomic

• typically add to the required purge times and lead to impractical process times. A possible bi-reaction during ALD growth is the production of a CVD component leading to increased growth for prolonged pulsing, particularly at higher temperatures [24]. Normally, this contribution is ignored as long as an ALD

• mode dominates the overall film growth. Such a CVD contribution is limited when a practical growth mode is considered sufficient. When highlighting the overall growth dynamics, rather long pulse and purge times for all precursors are used. In this case, a pulse scheme of 7 s TTIP, 10 s purge, 15 s

Sub-wavelength waveguide properties of 1D and surface-functionalized SnO₂ nanostructures of various morphologies

• Venkataramana Bonu,
• Binaya Kumar Sahu,
• Arindam Das,
• Sankarakumar Amirthapandian,
• Sandip Dhara and
• Harish C. Barshilia

Beilstein J. Nanotechnol. 2019, 10, 379–388, doi:10.3762/bjnano.10.37

• chemical vapor deposition (CVD) technique has been widely used for the controlled preparation of nanostructures [23]. Especially the vapor–solid (VS) process, without the involvement of catalysts, and the vapor–liquid–solid (VLS) process, with the assistance of catalysts, are utilized for the growth of

Effects of post-lithography cleaning on the yield and performance of CVD graphene-based devices

• Eduardo Nery Duarte de Araujo,
• Thiago Alonso Stephan Lacerda de Sousa,
• Luciano de Moura Guimarães and
• Flavio Plentz

Beilstein J. Nanotechnol. 2019, 10, 349–355, doi:10.3762/bjnano.10.34

• addition, we show that the size of these well-ordered domains is highly influenced by post-photolithography cleaning processes. Finally, we show that by using poly(dimethylglutarimide) (PMGI) as a protection layer, the production yield of CVD graphene devices is enhanced. Conversely, their electrical

• properties are deteriorated as compared with devices fabricated by conventional production methods. Keywords: CVD graphene; defects; mobility; well-ordered domain; Introduction The unique properties of graphene, such as high conductivity, high carrier mobility at room temperature, high sensitivity of the

• electrical properties to surface phenomena and the existence of several routes for its surface functionalization, grant this 2D material plenty of application possibilities [1][2][3][4][5][6][7][8]. Among the several synthesis methods of high-quality graphene, chemical vapor deposition (CVD) stands out as

Zn/F-doped tin oxide nanoparticles synthesized by laser pyrolysis: structural and optical properties

• Florian Dumitrache,
• Iuliana P. Morjan,
• Elena Dutu,
• Ion Morjan,
• Claudiu Teodor Fleaca,
• Monica Scarisoreanu,
• Alina Ilie,
• Marius Dumitru,
• Cristian Mihailescu,
• Adriana Smarandache and
• Gabriel Prodan

Beilstein J. Nanotechnol. 2019, 10, 9–21, doi:10.3762/bjnano.10.2

• [17]. Highly conductive films based on amorphous Co-doped SnO2 were also synthesized using a pulsed spray evaporation chemical vapor deposition (CVD) technique [18]. One of the most reported cationic dopants for tin oxide is Zn2+, where the obtained zinc-doped tin oxide (ZTO) films show lower bandgap

Investigation of CVD graphene as-grown on Cu foil using simultaneous scanning tunneling/atomic force microscopy

• Majid Fazeli Jadidi,
• Umut Kamber,
• Oğuzhan Gürlü and
• H. Özgür Özer

Beilstein J. Nanotechnol. 2018, 9, 2953–2959, doi:10.3762/bjnano.9.274

• (CVD) on Cu foils. Truly simultaneous operation is possible only with the use of small oscillation amplitudes. Under a typical STM imaging regime the force interaction is found to be repulsive. Force–distance spectroscopy revealed a maximum attractive force of about 7 nN between the tip and carbon

• array with maxima located in between the two carbon atoms was acquired in STM topography. Keywords: atomic force microscopy; CVD graphene; scanning tunneling microscopy; simultaneous operation; small amplitude; Introduction Graphene has been widely studied because of its potential use in future

• surface, and A is the measured amplitude during tip–surface interactions [34]. Graphene layers were grown on Cu foils using chemical vapor deposition (CVD) [35]. A custom-built atmospheric CVD system was used. Cu foils were heated under H2 + Ar atmosphere up to 950 °C. Upon reaching the process

Charged particle single nanometre manufacturing

• Philip D. Prewett,
• Cornelis W. Hagen,
• Claudia Lenk,
• Steve Lenk,
• Marcus Kaestner,
• Tzvetan Ivanov,
• Ahmad Ahmad,
• Ivo W. Rangelow,
• Xiaoqing Shi,
• Stuart A. Boden,
• Alex P. G. Robinson,
• Dongxu Yang,
• Sangeetha Hari,
• Marijke Scotuzzi and
• Ejaz Huq

Beilstein J. Nanotechnol. 2018, 9, 2855–2882, doi:10.3762/bjnano.9.266

• combined with CVD. As another example, 5 nm GaN quantum dots were deposited by Crozier [86] by EBID from a specially tailored precursor resulting in high-quality uniform deposits on a thin film of Si/SiO2. Shimojo [87] demonstrated the deposition of self-standing nanorods, 10 nm in diameter, by electrons

Contactless photomagnetoelectric investigations of 2D semiconductors

• Marian Nowak,
• Marcin Jesionek,
• Barbara Solecka,
• Piotr Szperlich,
• Piotr Duka and
• Anna Starczewska

Beilstein J. Nanotechnol. 2018, 9, 2741–2749, doi:10.3762/bjnano.9.256

• (). Experimental The investigated graphene samples were supplied by Graphene Supermarket. The single-layer graphene films were grown by CVD processing on a cooper foil and transferred onto a 170 μm thick polyethylene terephthalate (PET) foil. The polycrystalline graphene films covered about 90% of the foil, with

Metal-free catalysis based on nitrogen-doped carbon nanomaterials: a photoelectron spectroscopy point of view

• Mattia Scardamaglia and
• Carla Bittencourt

Beilstein J. Nanotechnol. 2018, 9, 2015–2031, doi:10.3762/bjnano.9.191

• -synthetic treatments. The most common technique for doping during the synthesis is chemical vapor deposition (CVD), similar to the synthesis of the pristine material [36][69][70], albeit using nitrogen-containing precursors such as benzylamine [71], acetonitrile [72][73], phthalocyanines [74][75] or ammonia

• responsible for the high catalytic performance in the ORR, although they reported a lower efficiency compared to commercial Pt catalysts. Remarkably, Luo and co-workers succeeded to synthesize graphene dope with purely pyridinic N by CVD of hydrogen, ethylene and ammonia on Cu foils [104], with nitrogen

• site is not available for O adsorption. This mechanism was recently observed by Scardamaglia et al. with high-resolution synchrotron measurements in a fully in situ experiment [84] in which contamination was avoided. The authors functionalized single-layer graphene grown by CVD on iridium(111) using

Defect formation in multiwalled carbon nanotubes under low-energy He and Ne ion irradiation

• Santhana Eswara,
• Jean-Nicolas Audinot,
• Brahime El Adib,
• Maël Guennou,
• Tom Wirtz and
• Patrick Philipp

Beilstein J. Nanotechnol. 2018, 9, 1951–1963, doi:10.3762/bjnano.9.186

• pristine samples similar to ours were observed by Lehtinen et al. for so-called bamboo MWCNTs [21], and by Ni et al. [22] and Nichols et al. [51] for CVD-grown MWCNTs. Compared to other data in literature the peak related to the D band is more intense than the one for the G band [1]. This indicates that

A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si_1−xGe_x and Si layers

• Richard Daubriac,
• Emmanuel Scheid,
• Hiba Rizk,
• Richard Monflier,
• Sylvain Joblot,
• Rémi Beneyton,
• Pablo Acosta Alba,
• Sébastien Kerdilès and
• Filadelfo Cristiano

Beilstein J. Nanotechnol. 2018, 9, 1926–1939, doi:10.3762/bjnano.9.184

• thick SiGe test structure fabricated by CVD and uniformly doped in situ during growth. The developed method is finally applied to the investigation of dopant activation achieved by advanced annealing methods (including millisecond and nanosecond laser annealing) in two material systems: 6 nm thick

• accuracy of final calculated values. Then, we demonstrate the reliability of a complete DHE procedure on a dedicated SiGe test structure fabricated by CVD and uniformly doped in situ during growth. Finally, we will apply our DHE method to the investigation of dopant activation achieved by advanced

• roughness (by AFM characterization). Our results show a cycle-by-cycle etch rate below 1 nm and a final roughness of 1 Å. DHE procedure validation on SiGe layers fabricated by CVD In this section, we detail a complete DHE procedure using a 20 nm thick boron-doped (1019 cm−3) Si0.77Ge0.23 layer grown by CVD

Synthesis of carbon nanowalls from a single-source metal-organic precursor

• André Giese,
• Sebastian Schipporeit,
• Volker Buck and
• Nicolas Wöhrl

Beilstein J. Nanotechnol. 2018, 9, 1895–1905, doi:10.3762/bjnano.9.181

• as shown with aluminium [20]. The ICP-PECVD source features a special antenna design, which provides the possibility to vary particle flow and particle energy independent of each other. Furthermore, energies can be set to very low levels (down to plasma energy) [23]. Experimental PE-CVD of CNWs CNWs

Synthesis of rare-earth metal and rare-earth metal-fluoride nanoparticles in ionic liquids and propylene carbonate

• Marvin Siebels,
• Lukas Mai,
• Laura Schmolke,
• Kai Schütte,
• Juri Barthel,
• Junpei Yue,
• Jörg Thomas,
• Bernd M. Smarsly,
• Anjana Devi,
• Roland A. Fischer and
• Christoph Janiak

Beilstein J. Nanotechnol. 2018, 9, 1881–1894, doi:10.3762/bjnano.9.180

• the polymerization of olefins [15][16] and as precursors in chemical vapor (CVD) processes of rare-earth materials such as oxides and nitrides [17][18][19]. It is especially advantageous that the decomposition products from the amidinate ligand are gaseous so that product contamination is minimized

SO₂ gas adsorption on carbon nanomaterials: a comparative study

• Deepu J. Babu,
• Divya Puthusseri,
• Frank G. Kühl,
• Sherif Okeil,
• Michael Bruns,
• Manfred Hampe and
• Jörg J. Schneider

Beilstein J. Nanotechnol. 2018, 9, 1782–1792, doi:10.3762/bjnano.9.169

• height of the VACNT structure obtained after 15 min of synthesis is ca. 800 µm. TEM investigations on numerous batches of as-synthesized VACNTs indicate double- to few-walled (number of walls ≤ 5) CNT structures with an average diameter of about 8 nm (Figure 3a). Like MWNTs, SWNTs grown by the CVD

• with a total length of 5–20 μm. SWNTs have a diameter of ca. 1.5 nm, a length of 1–5 µm and were produced by using CVD with a purity of >95%. Vertically aligned carbon nanotubes (VACNTs) were synthesized in our lab over a Si/SiO2 (600 nm) substrate in a quartz furnace using water-assisted chemical