Recent progress on field-effect transistor-based biosensors: device perspective

• Billel Smaani,
• Fares Nafa,
• Mohamed Salah Benlatrech,
• Ismahan Mahdi,
• Hamza Akroum,
• Mohamed walid Azizi,
• Khaled Harrar and
• Sayan Kanungo

Beilstein J. Nanotechnol. 2024, 15, 977–994, doi:10.3762/bjnano.15.80

• ]. Figure 5 shows the 2D representation of the structure of a silicon HG NT JL FET-based biosensor. In this case, the full architecture of a nanotube FET has been used to design high performance biosensors. There are two types of gate cavity: the inner gate cavity and the outer gate cavity, as shown in

• FET)-based biosensor. Figure 6 shows the 2D representation of silicon VS NS FET-based biosensor designed on a buried oxide (BOX). In this structure, three similar nanocavity regions were created between the three channels and the metal gate to immobilize targeted biomolecules, as shown in Figure 6

• . Figure 7 shows the 3D representation of an SRG JL FET-based biosensor. One type of doping concentration was added to the silicon channel, source, and drain region. A surrounding cavity was created between the oxide and the gate metal. This structure utilizes a silicon-based substrate with SiO2 as an

Electrospun nanofibers: building blocks for the repair of bone tissue

• Tuğrul Mert Serim,
• Gülin Amasya,
• Tuğba Eren-Böncü,
• Ceyda Tuba Şengel-Türk and
• Ayşe Nurten Özdemir

Beilstein J. Nanotechnol. 2024, 15, 941–953, doi:10.3762/bjnano.15.77

• -based nanofiber scaffolds for tissue regeneration (Stellenbosch Nanofiber Company, South Africa) [45]. ReBOSSIS consists of β-tricalcium phosphate, PLGA, and silicon-doped calcium carbonate to support bone formation. ReBOSSIS electrospun fibers are distinguished from other market products by a cotton

Water-assisted purification during electron beam-induced deposition of platinum and gold

• Cristiano Glessi,
• Fabian A. Polman and
• Cornelis W. Hagen

Beilstein J. Nanotechnol. 2024, 15, 884–896, doi:10.3762/bjnano.15.73

• after loading the sample, the chamber was plasma-cleaned with an XEI Scientific Evactron decontaminator for 30 min, at 0.4 Torr (air leak) and a forward radio frequency power of 12 W. Silicon substrates were obtained from a 525 ± 25 µm p-type silicon wafer (resistivity of 1–5 Ω·cm, (100) crystal

• orientation) with a native silicon oxide layer. Samples of 1 × 1 cm2 were used, on to which an array of annular patterns was lithographically defined, by laser lithography and etching using an SF6–O2 dry-etch, to facilitate location of the deposition areas. The substrates were roughly cleaned in acetone and

• both deposition and etching, resulting in partially purified material within the BSE range. In this case, with the injection of the water precursor only, cleaning of the silicon substrate is the only process observed. At a larger number of passes (5000–10000), a change in the morphology of the

Intermixing of MoS₂ and WS₂ photocatalysts toward methylene blue photodegradation

• Maryam Al Qaydi,
• Nitul S. Rajput,
• Michael Lejeune,
• Abdellatif Bouchalkha,
• Mimoun El Marssi,
• Steevy Cordette,
• Chaouki Kasmi and
• Mustapha Jouiad

Beilstein J. Nanotechnol. 2024, 15, 817–829, doi:10.3762/bjnano.15.68

• additional peaks observed in all XRD diagrams at ≈37° and ≈69° positions are due to the silicon substrate. The X-ray photoelectron spectroscopy (XPS) survey scans and high-resolution scans for all samples are presented in Figure 3a–j. All XPS analyses were first calibrated using the C 1s peak of carbon at

Exploring surface charge dynamics: implications for AFM height measurements in 2D materials

• Mario Navarro-Rodriguez,
• Andres M. Somoza and
• Elisa Palacios-Lidon

Beilstein J. Nanotechnol. 2024, 15, 767–780, doi:10.3762/bjnano.15.64

• and/or rGO in Milli-Q type-I water (MQ water) were utilized. A drop of these dispersions was cast onto highly doped p-type silicon (1–10 Ω·cm, Siltronix) with a 300 nm SiO2 layer thermally grown on top. Before deposition, the substrate underwent a thorough cleaning process, which involved rinsing with

• modulation mode (FM-KPFM) with an AC voltage of 700 mV at 7 kHz using platinum-coated silicon tips (Olympus AC240TM-R3, k = 2 N/m and f0 = 70 kHz). Using a dual lock-in amplifier (Zurich instruments, HF2LI), in addition to the KPFM channel, which provides information on the sample's SP, the 2ωelec

Effect of repeating hydrothermal growth processes and rapid thermal annealing on CuO thin film properties

• Monika Ozga,
• Eunika Zielony,
• Aleksandra Wierzbicka,
• Anna Wolska,
• Marcin Klepka,
• Marek Godlewski,
• Bogdan J. Kowalski and
• Bartłomiej S. Witkowski

Beilstein J. Nanotechnol. 2024, 15, 743–754, doi:10.3762/bjnano.15.62

• silicon (100) substrates (Siegert Wafer). These substrates were covered with a nucleation layer in the form of gold nanoislands sputtered using a turbomolecular-pumped coater Quorum Q150T ES. CuO films were obtained according to the following procedure. First, an aqueous solution of copper(II) acetate

• characterized using an analytical scanning electron microscope (SEM) Hitachi SU-70 with the X-ray microanalysis system (EDX) enabling composition analysis (Thermo Fisher Pathfinder system with a silicon drift detector). Additionally, in the study, a scanning probe microscope (Dimension Icon, Bruker) was used

• silicon nitride probe, ScanAsyst-AIR (Bruker). Scanning capacitance microscopy (SCM) measurements were conducted in contact mode using a silicon probe coated with a PtIr layer, SCM-PIT-V2 (Bruker). Capacitance measurements were taken with VAC = 2 V and VDC = 1 V applied. The carrier distribution maps at a

Level set simulation of focused ion beam sputtering of a multilayer substrate

• Alexander V. Rumyantsev,
• Nikolai I. Borgardt,
• Roman L. Volkov and
• Yuri A. Chaplygin

Beilstein J. Nanotechnol. 2024, 15, 733–742, doi:10.3762/bjnano.15.61

• processing was simulated using the level set method and experimentally studied by milling a silicon dioxide layer covering a crystalline silicon substrate. The simulation took into account the redeposition of atoms simultaneously sputtered from both layers of the sample as well as the influence of

• ; multilayer substrate; silicon; silicon dioxide; sputtering; Introduction The focused ion beam (FIB) technique is an effective method for surface nanostructuring. It is based on the local removal of material by sputtering with a narrow beam of, typically, gallium ions. This feature of the FIB method makes it

• -based [21], level set [22][23][24], and Monte Carlo [25] methods. The most commonly studied materials are monocrystalline silicon [21][22][23] and amorphous silicon dioxide [24][25] because of their technological importance in microelectronics. More complex simulations of multilayer milling, which need

Reduced subthreshold swing in a vertical tunnel FET using a low-work-function live metal strip and a low-k material at the drain

• Kalai Selvi Kanagarajan and
• Dhanalakshmi Krishnan Sadhasivan

Beilstein J. Nanotechnol. 2024, 15, 713–718, doi:10.3762/bjnano.15.59

• to reduce gate oxide leakage are high-k materials. The device’s ability to keep a charge is increased by using high-k materials, which also aids in downsizing. HfO2 is compatible with a silicon substrate and possesses a high dielectric constant (ε ≈ 25), a large bandgap (5.68 eV), band offsets with

• silicon, a low leakage current, and a lattice parameter that is close to that of silicon with a modest lattice misfit (ca. 5%) [11]. In this paper, a published VTFET structure is taken for comparison [12]. A large tunnel area and a thin channel enhance the device metrics [13]. In contrast to the

Elastic modulus of β-Ga₂O₃ nanowires measured by resonance and three-point bending techniques

• Annamarija Trausa,
• Sven Oras,
• Sergei Vlassov,
• Mikk Antsov,
• Tauno Tiirats,
• Andreas Kyritsakis,
• Boris Polyakov and
• Edgars Butanovs

Beilstein J. Nanotechnol. 2024, 15, 704–712, doi:10.3762/bjnano.15.58

• pressure chemical vapour transport in a horizontal quartz tube reactor (18 mm inner diameter) according to the method reported in [2]. The process involved loading a ceramic boat with 0.15 g of Ga2O3 powder (99.99%, Alfa Aesar) at the centre of the quartz tube. Oxidised silicon wafers SiO2/Si (100) coated

• geometry, utilising a 600 W Cu anode (Cu Kα radiation, λ = 1.5406 Å) X-ray tube. In four steps, (100)Si wafers (Semiconductor wafer, Inc.) with 50 nm thermal oxide, were processed to create the patterned silicon substrates with grooves and inverted pyramids. First, the patterns were created in a

• photoresist on the wafer using conventional optical lithography. Next, the SiO2 was selectively removed using a buffered HF solution to replicate the resist pattern in the oxide layer. Then, the silicon was etched at 90 °C in a tetramethylammonium hydroxide (TMAH) solution to create etch pits. Finally, the

Enhancing higher-order modal response in multifrequency atomic force microscopy with a coupled cantilever system

• Wendong Sun,
• Jianqiang Qian,
• Yingzi Li,
• Yanan Chen,
• Zhipeng Dou,
• Rui Lin,
• Peng Cheng,
• Xiaodong Gao,
• Quan Yuan and
• Yifan Hu

Beilstein J. Nanotechnol. 2024, 15, 694–703, doi:10.3762/bjnano.15.57

• parameters Several commercial rectangular multifrequency AFM cantilevers of different sizes from different manufacturers are summarized in [24]. In the ANSYS Workbench finite element simulation, the material used in the simulation is silicon, with a Young's modulus of 166 GPa and a density of 2330 kg/m3. We

• cantilever experimental platform setup used to measure the modal response is shown in Figure 7. The experimental setup consists of a macroscale cantilever (6 × 1 × 0.18 cm, silicon content up to 99.9999%) with left-side clamping and a simple bottom support. A photo is shown in Figure 8. In the experiments

Laser synthesis of nanoparticles in organic solvents – products, reactions, and perspectives

• Theo Fromme,
• Sven Reichenberger,
• Katharine M. Tibbetts and
• Stephan Barcikowski

Beilstein J. Nanotechnol. 2024, 15, 638–663, doi:10.3762/bjnano.15.54

• femtosecond and picosecond irradiation of solvents including toluene, hexane, acetone, and acetonitrile [117][162][163]. Nanodiamonds have been obtained through femtosecond irradiation of ethanol [164][165]. Fluorescent carbon dots were also observed as a by-product when synthesizing 1-octene-capped silicon

AFM-IR investigation of thin PECVD SiO_x films on a polypropylene substrate in the surface-sensitive mode

• Hendrik Müller,
• Hartmut Stadler,
• Teresa de los Arcos,
• Adrian Keller and
• Guido Grundmeier

Beilstein J. Nanotechnol. 2024, 15, 603–611, doi:10.3762/bjnano.15.51

• /bjnano.15.51 Abstract Thin silicon oxide films deposited on a polypropylene substrate by plasma-enhanced chemical vapor deposition were investigated using atomic force microscopy-based infrared (AFM-IR) nanospectroscopy in contact and surface-sensitive mode. The focus of this work is the comparison of

• signal of the substrate material could be significantly reduced. Even layers that are so thin that they could hardly be measured in the contact mode can be analyzed with the surface-sensitive mode. Keywords: AFM-IR; polypropylene; surface-sensitive mode; silicon oxide; thin films; XPS; Introduction

• sample excitation). However, it is much more flexible in the choice of the drive and detection frequencies, as only the mixing frequency needs to match a system resonance and not the individual frequencies themselves. Here, we use AFM-IR in the surface-sensitive mode to investigate thin silicon oxide

Stiffness calibration of qPlus sensors at low temperature through thermal noise measurements

• Laurent Nony,
• Sylvain Clair,
• Daniel Uehli,
• Aitziber Herrero,
• Jean-Marc Themlin,
• Andrea Campos,
• Franck Para,
• Alessandro Pioda and
• Christian Loppacher

Beilstein J. Nanotechnol. 2024, 15, 580–602, doi:10.3762/bjnano.15.50

• little precision. An accurate stiffness calibration is therefore mandatory if accurate force measurements are targeted. In nc-AFM, the probe may either be a silicon cantilever, a quartz tuning fork (QTF), or a length extensional resonator (LER). When used in ultrahigh vacuum (UHV) and at low temperature

• the framework focuses on a particular kind of sensor, it may be adapted to any high-k, high-Q nc-AFM probe used under similar conditions, such as silicon cantilevers and LERs. Keywords: low temperature; non-contact atomic force microscopy; qPlus sensors; quartz tuning fork; stiffness calibration

• and at room temperature, nc-AFM experiments are mostly carried out with silicon cantilevers, similar to those used during AFM experiments in air or in liquid. Their stiffness rarely exceeds 100 N/m. In UHV and at low temperature, the use of cantilevers is more tedious because of the required in situ

Fabrication of nanocrystal forms of ᴅ-cycloserine and their application for transdermal and enteric drug delivery systems

• Hsuan-Ang Tsai,
• Tsai-Miao Shih,
• Theodore Tsai,
• Jhe-Wei Hu,
• Yi-An Lai,
• Jui-Fu Hsiao and
• Guochuan Emil Tsai

Beilstein J. Nanotechnol. 2024, 15, 465–474, doi:10.3762/bjnano.15.42

• other hand, only a few research articles reported DCS formulations for parenteral administration [18][19]. Nanocarriers offer great advantages to many technological fields. For example, polytetrafluoroethylene (PTFE) with silicon carbide nanocrystals can be applied as a photostabilizer or as a UV light

Sidewall angle tuning in focused electron beam-induced processing

• Sangeetha Hari,
• Willem F. van Dorp,
• Johannes J. L. Mulders,
• Piet H. F. Trompenaars,
• Pieter Kruit and
• Cornelis W. Hagen

Beilstein J. Nanotechnol. 2024, 15, 447–456, doi:10.3762/bjnano.15.40

• ) and from the BSE (SE2) [6][7][8]. An example of a line deposited from a carbon precursor on a silicon substrate, coated with a 20 nm Au–Pd layer and a 5 nm Ti adhesion layer, is shown in Figure 1a, clearly showing the broad (black) tails on both sides of the line. The cross section of the line, made

• , section S1 for more details on the simulation). Sidewall slope evolution under FEBIE To experimentally study the modification of the sidewalls of a FEBID structure, carbon structures were first deposited on a silicon substrate with a 20 nm gold–palladium layer and a 5 nm titanium adhesion layer. The

• MeCpPtMe3. Then the sample was tilted by 52° and milled with a gallium FIB. The cross-sectional profile was imaged at low energy (2 keV) with the SE detector. SE image of a deposited FEBID carbon line, top view (a) and FIB cross section (b). The line was deposited from a dodecane precursor on a silicon

Heat-induced morphological changes in silver nanowires deposited on a patterned silicon substrate

• Elyad Damerchi,
• Sven Oras,
• Edgars Butanovs,
• Allar Liivlaid,
• Mikk Antsov,
• Boris Polyakov,
• Annamarija Trausa,
• Veronika Zadin,
• Andreas Kyritsakis,
• Loïc Vidal,
• Karine Mougin,
• Siim Pikker and
• Sergei Vlassov

Beilstein J. Nanotechnol. 2024, 15, 435–446, doi:10.3762/bjnano.15.39

• specially patterned silicon wafers so that some NWs were partially suspended over the holes in the substrate. Then, we performed a series of heat-treatment experiments and found that adhered and suspended parts of NWs behave differently under the heat treatment. Moreover, depending on the heat-treatment

• for various novel applications where arrays of metal nanostructures are used, such as surface-enhanced Raman spectroscopy substrates [36][37][38]. In this work, we deposited Ag NWs on specially patterned silicon (Si) substrates, so large fractions of NWs are partially suspended over the holes. Samples

• silicon substrates with square holes were prepared from (100) silicon wafers (Semiconductor Wafer, Inc.) with 50 nm thermal oxide in four steps as follows: 1) conventional optical lithography process to produce the desired pattern in a photoresist on the wafer; 2) selective removal of SiO2 using buffered

Investigating ripple pattern formation and damage profiles in Si and Ge induced by 100 keV Ar⁺ ion beam: a comparative study

• Indra Sulania,
• Harpreet Sondhi,
• Tanuj Kumar,
• Sunil Ojha,
• G R Umapathy,
• Ambuj Mishra,
• Ambuj Tripathi,
• Richa Krishna,
• Devesh Kumar Avasthi and
• Yogendra Kumar Mishra

Beilstein J. Nanotechnol. 2024, 15, 367–375, doi:10.3762/bjnano.15.33

• understood. Despite controlled fabrication of patterns has been achieved, details that influence the process of self-assembly still remain open. Ion beam sputtering is an important method for inducing topographical changes in specific materials. For silicon, self-organized dots, ripples, and cones have been

• or range of damage profiles. Single-crystal materials (e.g. silicon and germanium) are composed of ordered arrays of atoms. If an ion beam is aligned to the atomic planes, most of the ions pass through the interplanar space and penetrate deep into the crystal. This can be used in channelling studies

Modulated critical currents of spin-transfer torque-induced resistance changes in NiCu/Cu multilayered nanowires

• Mengqi Fu,
• Roman Hartmann,
• Julian Braun,
• Sergej Andreev,
• Torsten Pietsch and
• Elke Scheer

Beilstein J. Nanotechnol. 2024, 15, 360–366, doi:10.3762/bjnano.15.32

• Discussion The AAO template was fabricated by directly anodizing a ca. 1 µm thick aluminum (Al) film on a silicon (Si) substrate covered with 200 nm SiO2 and patterned Ti/Au (5/50 nm) bottom electrodes. It has pores with a diameter of around 35 nm, an interpore distance of around 50 nm, and a height of

Determining by Raman spectroscopy the average thickness and N-layer-specific surface coverages of MoS₂ thin films with domains much smaller than the laser spot size

• Felipe Wasem Klein,
• Jean-Roch Huntzinger,
• Vincent Astié,
• Damien Voiry,
• Romain Parret,
• Houssine Makhlouf,
• Sandrine Juillaguet,
• Jean-Manuel Decams,
• Sylvie Contreras,
• Périne Landois,
• Ahmed-Azmi Zahab,
• Jean-Louis Sauvajol and
• Matthieu Paillet

Beilstein J. Nanotechnol. 2024, 15, 279–296, doi:10.3762/bjnano.15.26

• ) on the precise evaluation of the integrated intensities of the phonon modes of MoS2, namely A(A1g) and A(E12g), with respect to the integrated intensity of the 521 cm−1 mode from a bare area of the oxidized silicon substrate, A0(Si), used as an intensity reference [31], or from the silicon substrate

• -Stokes intensity ratio of A1g phonon modes (similar results are obtained using E12g) and that of silicon from the Stokes/anti-Stokes intensity ratio of the 521 cm−1 Si mode (see [42] for method details). While the silicon temperature is quasi-insensitive to Pλ, the temperature of MoS2 flakes changes

• ratio, it is of great practical advantage to use the same silicon (the silicon below the oxide, which is Si(100) in the present work) in the measurement of A2D(Si) and A0(Si). A necessary precaution is that the Si(100) substrate orientation has to be kept the same for both measurements. Another

Design, fabrication, and characterization of kinetic-inductive force sensors for scanning probe applications

• August K. Roos,
• Ermes Scarano,
• Elisabet K. Arvidsson,
• Erik Holmgren and
• David B. Haviland

Beilstein J. Nanotechnol. 2024, 15, 242–255, doi:10.3762/bjnano.15.23

• nitride (Nb-Ti-N) [20][25], or granular aluminum (grAl) [26][27], wolfram (W) [28], and silicon doped with boron (Si:B) [29]. Results and Discussion Figure 1 gives an overview of our fabricated sensor, showing the main components. The cantilever is a 600 nm thick Si-N triangular plate released from a much

• thicker silicon (Si) support, as shown in Figure 1a and Figure 1g. Figure 1a shows the microwave resonant circuit with its interdigital capacitor in series with the nanowire inductor. The meandering nanowire is placed at the base of the cantilever as shown in Figure 1c, in the area of largest strain

• of roughly 6 μm/min. This results in all the samples on the wafer being supported by a thin layer of silicon close to the top side. (h) Release and cantilever under-etch. A simple and fast method of release uses an isotropic dry-etch that completes the chip’s release from the wafer and removes the

Quantitative wear evaluation of tips based on sharp structures

• Ke Xu and
• Houwen Leng

Beilstein J. Nanotechnol. 2024, 15, 230–241, doi:10.3762/bjnano.15.22

• analyze the shape of the tip, we use a probe to scan a TipCheck calibration sample and characterize its morphology. The TipCheck sample, provided by BudgetSensors, consists of a silicon chip sample with a wear-resistant thin film coating. The thin film coating exhibits granular and sharp nanostructures

Ion beam processing of DNA origami nanostructures

• Leo Sala,
• Agnes Zerolová,
• Violaine Vizcaino,
• Alain Mery,
• Alicja Domaracka,
• Hermann Rothard,
• Philippe Boduch,
• Dominik Pinkas and
• Jaroslav Kocišek

Beilstein J. Nanotechnol. 2024, 15, 207–214, doi:10.3762/bjnano.15.20

• . Preparation of dry samples and AFM imaging Silicon wafers were cut into ∼7 × 7 mm2 chips and were then plasma-cleaned in air using a Roplass RPS40+ plasma cleaner, which generates a thin layer of plasma by diffuse coplanar surface barrier discharge [35]. The Si surface is exposed to the thin plasma layer for

CdSe/ZnS quantum dots as a booster in the active layer of distributed ternary organic photovoltaics

• Gabriela Lewińska,
• Piotr Jeleń,
• Zofia Kucia,
• Maciej Sitarz,
• Łukasz Walczak,
• Bartłomiej Szafraniak,
• Jerzy Sanetra and
• Konstanty W. Marszalek

Beilstein J. Nanotechnol. 2024, 15, 144–156, doi:10.3762/bjnano.15.14

• are used in opto- and nanoelectronics. QDs establish a class of materials transitional between subatomic and mass types of matter. The classification of QDs according to the core material is divided into cadmium [7][8], silver [9][10], indium [9], carbon [11][12], and silicon [13][14]. Numerous

• carried out for three incidence angles (65°, 70°, and 75°). A Bruker atomic force microscope (AFM) MULTIMODE 8 was used in the measurements in the ScanAsyst in Air mode, using silicon nitride probes (with a nominal tip radius of 2 nm and a spring constant equal to 0.4 N/m). The substrate was

• monocrystalline silicon. A WITec Alpha 300 M+ spectrometer with a 488 nm laser, 600 groove grating, and a 100× ZEISS objective was used for Raman measurements. The samples were deposited on a glass substrate. Ultraviolet photoelectron spectroscopy (UPS) was conducted in an ultrahigh-vacuum chamber with a base

Influence of conductive carbon and MnCo₂O₄ on morphological and electrical properties of hydrogels for electrochemical energy conversion

• Sylwia Pawłowska,
• Karolina Cysewska,
• Yasamin Ziai,
• Jakub Karczewski,
• Piotr Jasiński and
• Sebastian Molin

Beilstein J. Nanotechnol. 2024, 15, 57–70, doi:10.3762/bjnano.15.6

• an accelerating voltage of 10 kV. Before imaging, the hydrogel samples were freeze-dried and coated with a 10 nm gold layer. The chemical composition of the hydrogel was analysed with a Thermo Fisher Scientific silicon drift detector energy-dispersive X-ray spectroscope. For characterisation of the

Measurements of dichroic bow-tie antenna arrays with integrated cold-electron bolometers using YBCO oscillators

• Leonid S. Revin,
• Dmitry A. Pimanov,
• Alexander V. Chiginev,
• Anton V. Blagodatkin,
• Viktor O. Zbrozhek,
• Andrey V. Samartsev,
• Anastasia N. Orlova,
• Dmitry V. Masterov,
• Alexey E. Parafin,
• Victoria Yu. Safonova,
• Anna V. Gordeeva,
• Andrey L. Pankratov,
• Leonid S. Kuzmin,
• Anatolie S. Sidorenko,
• Silvia Masi and
• Paolo de Bernardis

Beilstein J. Nanotechnol. 2024, 15, 26–36, doi:10.3762/bjnano.15.3

• We consider properties of dichroic antenna arrays on a silicon substrate with integrated cold-electron bolometers to detect radiation at frequencies of 210 and 240 GHz. This frequency range is widely used in cosmic microwave background experiments in space, balloon, and ground-based missions such as

• TES bolometers. The low- and mid-frequency arrays consist of dual- and triple-frequency detectors combined with sinusoidal antennas and silicon lenses. The high-frequency array consists of single- and dual-frequency detectors with orthomodal transducers and silicon horns. This array is aimed at 195

• antennas for frequencies of 210 and 240 GHz with cold-electron bolometers, described in the present paper, is proposed to be suitable for such applications. Two arrays placed on a single silicon chip with 7 mm × 7 mm size can independently detect radiation at two frequencies. Here, in the design of