Optically and electrically driven nanoantennas

• Monika Fleischer,
• Dai Zhang and
• Alfred J. Meixner

Beilstein J. Nanotechnol. 2020, 11, 1542–1545, doi:10.3762/bjnano.11.136

• top-down approaches such as thin film deposition and nanopatterning, as well as bottom-up approaches such as chemical synthesis and self-assembly [38]. Gap sizes may range from a few tens of nanometers down to sub-nanometer tunnel junctions, where the classical description of the plasmonic behavior

Design of V-shaped cantilevers for enhanced multifrequency AFM measurements

• Mehrnoosh Damircheli and
• Babak Eslami

Beilstein J. Nanotechnol. 2020, 11, 1525–1541, doi:10.3762/bjnano.11.135

• experiments done. Firstly, a PS polymer solution (molecular weight of 35000 dissolved in tetrahydrofuran (THF)) was spin-coated at 3500 rpm for 60 s on a cleaned Au substrate. All items were purchased from Sigma-Aldrich. After drying the sample, a portion of the PS thin film was scratched to expose the Au

Adsorption and self-assembly of porphyrins on ultrathin CoO films on Ir(100)

• Feifei Xiang,
• Tobias Schmitt,
• Marco Raschmann and
• M. Alexander Schneider

Beilstein J. Nanotechnol. 2020, 11, 1516–1524, doi:10.3762/bjnano.11.134

• , it is also an anti-ferromagnet due to electron correlation effects and it shows catalytic activity [14][15][16][17]. As a thin film grown on Ir(100), the oxide is of extremely high quality [18][19][20] avoiding the complexity that arises from atomic-scale defects in bulk materials [5][6][7][8]. The

Controlling the electronic and physical coupling on dielectric thin films

• Philipp Hurdax,
• Michael Hollerer,
• Larissa Egger,
• Georg Koller,
• Xiaosheng Yang,
• Anja Haags,
• Serguei Soubatch,
• Frank Stefan Tautz,
• Mathias Richter,
• Alexander Gottwald,
• Peter Puschnig,
• Martin Sterrer and
• Michael G. Ramsey

Beilstein J. Nanotechnol. 2020, 11, 1492–1503, doi:10.3762/bjnano.11.132

• constant of the thin film, and dcs is the distance between the charge in the molecule and its image charge in the metal (i.e., the charge separation distance). In this report, we demonstrate the robustness of the conclusions drawn from the 5A study by considering para-sexiphenyl (6P, C36H26). In contrast

Antimicrobial metal-based nanoparticles: a review on their synthesis, types and antimicrobial action

• Matías Guerrero Correa,
• Fernanda B. Martínez,
• Cristian Patiño Vidal,
• Camilo Streitt,
• Juan Escrig and
• Carol Lopez de Dicastillo

Beilstein J. Nanotechnol. 2020, 11, 1450–1469, doi:10.3762/bjnano.11.129

• nm were synthesized [42]. The chemical vapor deposition method is a technique in which the substrate is exposed to one or more volatile precursors, which react to and/or decompose on the substrate surface to produce the desired thin film deposit. For example, Zhao et al. [44] obtained graphene

Wafer-level integration of self-aligned high aspect ratio silicon 3D structures using the MACE method with Au, Pd, Pt, Cu, and Ir

• Mathias Franz,
• Romy Junghans,
• Paul Schmitt,
• Adriana Szeghalmi and
• Stefan E. Schulz

Beilstein J. Nanotechnol. 2020, 11, 1439–1449, doi:10.3762/bjnano.11.128

• appropriate noble metal. Experimental Here, a wafer-level integration scheme for the fabrication of high aspect ratio silicon templates is discussed. The whole process has been done on 150 mm p-doped (5–20 Ω·cm) silicon (100) wafers. The wafers have been coated with a 5 nm noble metal thin film using standard

Protruding hydrogen atoms as markers for the molecular orientation of a metallocene

• Linda Laflör,
• Michael Reichling and
• Philipp Rahe

Beilstein J. Nanotechnol. 2020, 11, 1432–1438, doi:10.3762/bjnano.11.127

• acid (FDCA) molecules on bulk and thin film CaF2(111) surfaces with non-contact atomic force microscopy (NC-AFM). We use NC-AFM image calculations with the probe particle model to interpret this distinct shape by repulsive interactions between the NC-AFM tip and the top hydrogen atoms of the

• /CaF1/Si(111) thin film samples under ultrahigh vacuum conditions (p < 5 × 10−10 mbar) in two separate systems equipped with appropriate facilities for in situ sample preparation. Bulk CaF2 crystals (Korth Kristalle, Altenholz, Germany) were cleaved in vacuum [24] after degassing the crystal and sample

• details on the thin film growth and properties can be found in [22][26][27][28]. Deposition of 1,1’-ferrocene dicarboxylic acid (purity 98%, Alfa Aesar, Kandel, Germany) on samples held at room temperature was accomplished by sublimation from custom-built Knudsen cells heated to about 390 K. For bulk

Analysis of catalyst surface wetting: the early stage of epitaxial germanium nanowire growth

• Owen C. Ernst,
• Felix Lange,
• David Uebel,
• Thomas Teubner and
• Torsten Boeck

Beilstein J. Nanotechnol. 2020, 11, 1371–1380, doi:10.3762/bjnano.11.121

• beneficial when intentionally used (e.g., to create strongly localized heat sources [7][8]), but it can also be disruptive (e.g., when ultrathin copper layers collapse on titanium nitride, damaging electronic devices [9][10]). However, in thin film applications these phenomena are rarely attributed to the

• values below the abscissa and converges towards zero. This is a major distinction since values above zero leads to the formation of a continuous thin film, whereas values below zero promote the formation of droplets on the surface. Since a gold monolayer has a nominal thickness of 0.32 nm, the maximum

Impact of fluorination on interface energetics and growth of pentacene on Ag(111)

• Qi Wang,
• Meng-Ting Chen,
• Antoni Franco-Cañellas,
• Bin Shen,
• Thomas Geiger,
• Holger F. Bettinger,
• Frank Schreiber,
• Ingo Salzmann,
• Alexander Gerlach and
• Steffen Duhm

Beilstein J. Nanotechnol. 2020, 11, 1361–1370, doi:10.3762/bjnano.11.120

• PFP this could be ascribed to attractive quadrupole interactions between adjacent PFP molecules [18][56], and this seemed to be the case for partial fluorination as well. The differences in thin film structure were also reflected in the electronic structures, which were distinctively different in

• multilayers on Ag(111). Our results highlight that even for weak organic–metal interaction, the fluorine substitution significantly affects the organic thin film growth beyond the first layer as well as the multilayer electronic structure. Experimental F4PEN was synthesized following an established procedure

• (base pressure: 3 × 10−10 mbar) for substrate preparation, thin film evaporation and analysis. LEED was performed using a Micro-Channel-Plate LEED (OCI BDL800IR-MCP). Photoelectron spectroscopy experiments were performed using a SPECS PHOIBOS 150 analyzer and monochromatized He I radiation (21.22 eV

Effect of localized helium ion irradiation on the performance of synthetic monolayer MoS₂ field-effect transistors

• Jakub Jadwiszczak,
• Pierce Maguire,
• Conor P. Cullen,
• Georg S. Duesberg and
• Hongzhou Zhang

Beilstein J. Nanotechnol. 2020, 11, 1329–1335, doi:10.3762/bjnano.11.117

• achieved by selective ion sputtering in thin film transistors has also been observed in He+-irradiated InGaZnO devices [27]. This irradiation-induced carrier activation depends not only on the fluence of the ion beam, but also on the absolute number of defects that can be introduced. Therefore, the

Structural and electronic properties of SnO₂ doped with non-metal elements

• Jianyuan Yu,
• Yingeng Wang,
• Yan Huang,
• Xiuwen Wang,
• Jing Guo,
• Jingkai Yang and
• Hongli Zhao

Beilstein J. Nanotechnol. 2020, 11, 1321–1328, doi:10.3762/bjnano.11.116

• SnO2; electronic structure; optical properties; Introduction Thin film solar cells are devices that convert solar energy into electrical energy. Transparent conductive films (TCFs) are a thin film material with both conductive capabilities and high transmittance in the visible light range (300–800 nm

• ) [1][2][3]. TCFs serve as the front electrode of thin film solar cells. Up to now, the solar energy conversion efficiency is about 23.3% [4], and it is important to increase the photovoltaic power generation efficiency, as well as the performance of the front electrode. The intrinsic semiconductor

• research works has been done examining different doping elements. Doped tin oxide thin film have been widely used in the fields of thin film solar cell electrodes, electronic display devices, and gas sensors. Also doped SnO2 been used for energy-saving low-emissivity glass coatings due to low resistivity

An atomic force microscope integrated with a helium ion microscope for correlative nanoscale characterization

• Santiago H. Andany,
• Gregor Hlawacek,
• Stefan Hummel,
• Charlène Brillard,
• Mustafa Kangül and
• Georg E. Fantner

Beilstein J. Nanotechnol. 2020, 11, 1272–1279, doi:10.3762/bjnano.11.111

• resist [31]. Chain scission leads to volume loss through the release of gas molecules, and this leads to the shrinkage of exposed PMMA [32], which can be easily quantified using AFM. In a second experiment, we tested the effect on a PMMA thin film exposed to different doses under the focused He ion beam

Proximity effect in [Nb(1.5 nm)/Fe(x)]₁₀/Nb(50 nm) superconductor/ferromagnet heterostructures

• Yury Khaydukov,
• Sabine Pütter,
• Laura Guasco,
• Roman Morari,
• Gideok Kim,
• Thomas Keller,
• Anatolie Sidorenko and
• Bernhard Keimer

Beilstein J. Nanotechnol. 2020, 11, 1254–1263, doi:10.3762/bjnano.11.109

• discussions. This work is partially based on experiments performed at the NREX instrument operated by Max-Planck Society at the Heinz Maier-Leibnitz Zentrum (MLZ), Garching, Germany. Sample preparation was performed in the thin film laboratory of the Jülich Centre for Neutron Science (JCNS) at Heinz Maier

Ultrasensitive detection of cadmium ions using a microcantilever-based piezoresistive sensor for groundwater

• Dinesh Rotake,
• Anand Darji and
• Nitin Kale

Beilstein J. Nanotechnol. 2020, 11, 1242–1253, doi:10.3762/bjnano.11.108

• expanding their deleterious effect on human health and the environment. The proposed technique uses a blend of thin-film and microcantilever (micro-electromechanical systems) technology, which mitigate the disadvantages of the nanoparticle approaches, for the selective detection of Cd(II) with a LOD below

• cantilever sensors. Moreover, the proposed piezoresistive device has capabilities to directly capture the surface stress make this a better option for HMI applications. Microfluidic Platform with Piezosensor In the proposed method, the benefits of three different technologies are combined, namely thin film

Hybridization vs decoupling: influence of an h-BN interlayer on the physical properties of a lander-type molecule on Ni(111)

• Maximilian Schaal,
• Takumi Aihara,
• Marco Gruenewald,
• Felix Otto,
• Jari Domke,
• Roman Forker,
• Hiroyuki Yoshida and
• Torsten Fritz

Beilstein J. Nanotechnol. 2020, 11, 1168–1177, doi:10.3762/bjnano.11.101

• this sample as highly ordered DBP layer. The DBP layer that was deposited at a substrate temperature of 25 °C, on the other hand, is labeled as less ordered DBP layer. An increase of the crystal quality of the DBP thin film grown at a substrate temperature higher than 90 °C was also reported by Zhou et

Revealing the local crystallinity of single silicon core–shell nanowires using tip-enhanced Raman spectroscopy

• Marius van den Berg,
• Ardeshir Moeinian,
• Arne Kobald,
• Yu-Ting Chen,
• Anke Horneber,
• Steffen Strehle,
• Alfred J. Meixner and
• Dai Zhang

Beilstein J. Nanotechnol. 2020, 11, 1147–1156, doi:10.3762/bjnano.11.99

• antenna. This nanoantenna is typically made by chemical etching of a thin Ag or Au wire or by evaporating a Ag or Au thin film on AFM tips. The tip works like an optical antenna when it is brought as close as a few nanometers to the sample surface and when it is illuminated with a tightly focused laser

• light blue and orange lines show the raw spectra, which are composed of a broad photoluminescence continuum emitted from the underlying Au thin film and sharp Raman peaks. For further analysis, these spectral features are fitted using Lorentzian functions for the Raman peaks and a Gaussian function for

Excitonic and electronic transitions in Me–Sb₂Se₃ structures

• Nicolae N. Syrbu,
• Victor V. Zalamai,
• Ivan G. Stamov and
• Stepan I. Beril

Beilstein J. Nanotechnol. 2020, 11, 1045–1053, doi:10.3762/bjnano.11.89

• costs [3][4][5][6][7][8][9][10]. It has been shown that Sb2Se3 has many applications in photovoltaic devices and thermoelectric systems where it can be used as a thin film [11], in thermovoltaic and switch devices [12], in optical data storage [13] and in optoelectronics as a 2D anisotropic material [14

Gas-sensing features of nanostructured tellurium thin films

• Dumitru Tsiulyanu

Beilstein J. Nanotechnol. 2020, 11, 1010–1018, doi:10.3762/bjnano.11.85

• films; Introduction Tellurium (Te) is a multifunctional chemical element used for the development of many devices, such as diodes with high (106) rectification ratios, thin-film field-effect transistors, optical recording media, infrared and UV detectors, strain-sensitive devices and others (see [1][2

Atomic layer deposition for efficient oxygen evolution reaction at Pt/Ir catalyst layers

• Stefanie Schlicht,
• Korcan Percin,
• Stefanie Kriescher,
• André Hofer,
• Claudia Weidlich,
• Matthias Wessling and
• Julien Bachmann

Beilstein J. Nanotechnol. 2020, 11, 952–959, doi:10.3762/bjnano.11.79

• Stefanie Schlicht Korcan Percin Stefanie Kriescher Andre Hofer Claudia Weidlich Matthias Wessling Julien Bachmann Friedrich-Alexander-Universität Erlangen-Nürnberg, Chair ’Chemistry of Thin Film Materials’, IZNF, Cauerstr. 3, 91058 Erlangen, Germany DWI-Leibniz Institute for Interactive Materials

• attractive thin film technique that allows for a conformal coating of not only planar substrates but also of highly porous ones [12][19][20][25]. This method is based on well-defined self-limiting surface reactions combined to deposit thin layers with highly uniform thickness. At least two precursors

Band tail state related photoluminescence and photoresponse of ZnMgO solid solution nanostructured films

• Vadim Morari,
• Aida Pantazi,
• Nicolai Curmei,
• Vitalie Postolache,
• Emil V. Rusu,
• Marius Enachescu,
• Ion M. Tiginyanu and
• Veaceslav V. Ursaki

Beilstein J. Nanotechnol. 2020, 11, 899–910, doi:10.3762/bjnano.11.75

• the alloy. Moreover, the luminescence is excited by the photon energy (3.81 eV) much lower than the bandgap for the thin film with the x value of 0.40 (4.28 eV). The same is true for the luminescence measured at low temperature (Table 2). The bandgap of the alloy at low temperature was recalculated

Templating effect of single-layer graphene supported by an insulating substrate on the molecular orientation of lead phthalocyanine

• K. Priya Madhuri,
• Abhay A. Sagade,
• Pralay K. Santra and
• Neena S. John

Beilstein J. Nanotechnol. 2020, 11, 814–820, doi:10.3762/bjnano.11.66

• height variation. (a) AFM topography,1 µm × 1 µm scan area. (b) Corresponding current map of 10 nm PbPc thin film on SLG/SiO2/Si substrate obtained at 2 V sample bias. (c) Profile section of (b) along the marked line showing the current variation across the film. (d) I–V curve acquired from a conducting

Epitaxial growth and superconducting properties of thin-film PdFe/VN and VN/PdFe bilayers on MgO(001) substrates

• Wael M. Mohammed,
• Igor V. Yanilkin,
• Amir I. Gumarov,
• Airat G. Kiiamov,
• Roman V. Yusupov and
• Lenar R. Tagirov

Beilstein J. Nanotechnol. 2020, 11, 807–813, doi:10.3762/bjnano.11.65

• Abstract Single-layer vanadium nitride (VN) and bilayer Pd0.96Fe0.04/VN and VN/Pd0.92Fe0.08 thin-film heterostructures for possible spintronics applications were synthesized on (001)-oriented single-crystalline magnesium oxide (MgO) substrates utilizing a four-chamber ultrahigh vacuum deposition and

• VN thin film has grown cube-on-cube epitaxially (for an individual Pd1−xFex film see the full crystallinity analysis in [33]). Figure 1c,d shows that the Pd0.96Fe0.04/VN and VN/Pd0.92Fe0.08 heterostructures are pass-through epitaxial. This is, first of all, due to the good lattice match between MgO

• Cu Kα (λ = 1.5418 Å) radiation in the Bragg–Brentano geometry with a scanning rate of 0.002°/s in the 2θ range from 17° to 82° and a step width of 0.0153°. Room-temperature XRD patterns of the pristine MgO(001) substrate, the VN thin film on MgO, Pd0.96Fe0.04 on MgO and the Pd0.96Fe0.04/VN

A set of empirical equations describing the observed colours of metal–anodic aluminium oxide–Al nanostructures

• Cristina V. Manzano,
• Jakob J. Schwiedrzik,
• Gerhard Bürki,
• Laszlo Pethö,
• Johann Michler and
• Laetitia Philippe

Beilstein J. Nanotechnol. 2020, 11, 798–806, doi:10.3762/bjnano.11.64

• and thickness) and the porosity of the films was changed by applying different chemical etching times (from 2 to 8 min) using a 5 wt % H3PO4 solution at 35 °C. In order to obtain different colours of the nanostructures, an 8 nm thin film of chromium was deposited on top of the AAO films using an

Structural optical and electrical properties of a transparent conductive ITO/Al–Ag/ITO multilayer contact

• Aliyu Kabiru Isiyaku,
• Ahmad Hadi Ali and
• Nafarizal Nayan

Beilstein J. Nanotechnol. 2020, 11, 695–702, doi:10.3762/bjnano.11.57

• measurements) were used as substrates. Decon90 glass cleaner was used for glass substrate cleansing. Thin film preparation A SNTEK Korea magnetron sputtering system with a dual radio frequency (RF)/direct current (DC) sputtering source with a main deposition chamber 15.7 inches in height and 23.6 inches in

• . K. Isiyaku as suggested by A. H. Ali and N. Nayan. Thin film deposition and characterization were performed by A. K. Isiyaku. Data analyses and interpretation including manuscript writing were carried out by A. K. Isiyaku, A. H. Ali and N. Nayan. Funding The support from Universiti Tun Hussein Onn

A novel dry-blending method to reduce the coefficient of thermal expansion of polymer templates for OTFT electrodes

• Xiangdong Ye,
• Bo Tian,
• Yuxuan Guo,
• Fan Fan and
• Anjiang Cai

Beilstein J. Nanotechnol. 2020, 11, 671–677, doi:10.3762/bjnano.11.53

• Telecommunications, Xi’an 710121, China 10.3762/bjnano.11.53 Abstract Among the patterning technologies for organic thin-film transistors (OTFTs), the fabrication of OTFT electrodes using polymer templates has attracted much attention. However, deviations in the electrode alignment occur because the coefficient of

• achieved the alignment of OTFT electrodes using the composite template. Keywords: coefficient of thermal expansion; dry blending; organic thin-film transistors (OTFTs); OTFT electrodes; PDMS/SiO2 composite template; Introduction Organic thin-film transistors (OTFTs) provide a platform to construct next