Development of an anti-pollution coating process technology for the application of an on-site PV module

• Sejin Jung,
• Wonseok Choi,
• Jung Hyun Kim and
• Jang Myoun Ko

Beilstein J. Nanotechnol. 2019, 10, 332–336, doi:10.3762/bjnano.10.32

• Engineering and Biotechnology, Hanbat National University, Daejeon 34158, Republic of Korea 10.3762/bjnano.10.32 Abstract This study aimed to apply annealing processes during the coating of photovoltaic (PV) module glasses to PV modules already installed through an easy and simple procedure. Three types of

• annealing treatments were applied to PV module glasses, i.e., furnace, rapid thermal annealing (RTA) and torch. Among these, torch annealing, which can be easily carried out at PV module installation sites, was applied to PV module glasses using different numbers of repetition. Light transmittance, contact

• angle, anti-pollution characteristics, adhesion and hardness of the functional coating films after using different annealing treatment times and methods were measured, and it was confirmed that these characteristics varied depending on the annealing treatment times and methods. Through this, it was

Geometrical optimisation of core–shell nanowire arrays for enhanced absorption in thin crystalline silicon heterojunction solar cells

• Robin Vismara,
• Olindo Isabella,
• Andrea Ingenito,
• Fai Tong Si and
• Miro Zeman

Beilstein J. Nanotechnol. 2019, 10, 322–331, doi:10.3762/bjnano.10.31

• 20 keV. Oxidation and annealing were carried out in dry ambient at 850 °C for 90 min, resulting in a sheet resistance RSH of 60 Ω/square. Before depositing the coating layers, the silicon wafer with nanowires on top was treated with diluted hydrofluoric acid, to remove the thin native oxide layer

Nitrous oxide as an effective AFM tip functionalization: a comparative study

• Taras Chutora,
• Bruno de la Torre,
• Pingo Mutombo,
• Jack Hellerstedt,
• Jaromír Kopeček,
• Pavel Jelínek and
• Martin Švec

Beilstein J. Nanotechnol. 2019, 10, 315–321, doi:10.3762/bjnano.10.30

• ) was cleaned by repeated cycles of sputtering (1 keV) and subsequent annealing to 600 °C. FePc molecules (Sigma Aldrich, evaporation temperature ca. 250 °C) were directly evaporated onto a clean Au(111) surface at room temperature. N2O was adsorbed onto the Au(111) surface at temperatures below 12 K

Raman study of flash-lamp annealed aqueous Cu₂ZnSnS₄ nanocrystals

• Yevhenii Havryliuk,
• Oleksandr Selyshchev,
• Mykhailo Valakh,
• Alexandra Raevskaya,
• Oleksandr Stroyuk,
• Constance Schmidt,
• Volodymyr Dzhagan and
• Dietrich R. T. Zahn

Beilstein J. Nanotechnol. 2019, 10, 222–227, doi:10.3762/bjnano.10.20

• University of Technology, 09107 Chemnitz, Germany L. V. Pysarzhevsky Institute of Physical Chemistry, National Academy of Sciences of Ukraine, Kyiv, 03028, Ukraine 10.3762/bjnano.10.20 Abstract The effect of flash-lamp annealing (FLA) on the re-crystallization of thin films made of colloidal Cu2ZnSnS4

• importance. The technologies of rapid annealing by thermal heating or intensive pulsed light radiation turned out to be very promising [14][15][16]. The effectiveness of the method of flash-lamp annealing (FLA) was demonstrated for various compounds, including quaternary metal chalcogenides [17][18]. The

• size of 35 nm. The effect of annealing was investigated only up to an energy density of 11.6 J/cm2 and possible influences of NC film thickness and ambient atmosphere were not considered. In this work, we investigated the effect of FLA on CZTS NCs synthesized under mild conditions, namely at 80 °C in

Uniform Sb₂S₃ optical coatings by chemical spray method

• Jako S. Eensalu,
• Atanas Katerski,
• Erki Kärber,
• Ilona Oja Acik,
• Arvo Mere and
• Malle Krunks

Beilstein J. Nanotechnol. 2019, 10, 198–210, doi:10.3762/bjnano.10.18

• pyrolysis in air by tuning of the deposition temperature, the Sb/S precursor molar ratio in the spray solution, and the post-deposition treatment temperature. Keywords: antimony sulfide; thin films; ultrasonic spray; vacuum annealing; Volmer–Weber growth; Introduction Antimony sulfide (Sb2S3) is an

• /S 1:3 Sb2S3 layers, as the crystallite size increases after vacuum annealing at 170 °C from 19 ± 8 nm to 100 ± 23 nm by raising TD from 200 to 220 °C. The crystallite size in Sb/S 1:6 Sb2S3 layers (42 ± 15 nm) does not change significantly with TD or vacuum treatment. Furthermore, vacuum treatment

Zn/F-doped tin oxide nanoparticles synthesized by laser pyrolysis: structural and optical properties

• Florian Dumitrache,
• Iuliana P. Morjan,
• Elena Dutu,
• Ion Morjan,
• Claudiu Teodor Fleaca,
• Monica Scarisoreanu,
• Alina Ilie,
• Marius Dumitru,
• Cristian Mihailescu,
• Adriana Smarandache and
• Gabriel Prodan

Beilstein J. Nanotechnol. 2019, 10, 9–21, doi:10.3762/bjnano.10.2

• .) antimony by spray pyrolysis [9] or by sol–gel methods followed by spin-coating and annealing in different environments [10], ii.) manganese by long-time annealing of Mn/SnO2 bilayers in air at 200 °C [11] or by co-precipitation [12], iii.) aluminum, copper or indium all by spray pyrolysis from ethanolic

• solutions [13] and iv.) iron by laser pyrolysis [14][15] or by electron beam evaporation [16]. Cobalt-doped tin oxide has also been reported, and the resulting polycrystalline films were prepared by spin-coating and annealing from chloride ethanolic solutions resulted in lower bandgap values than pure SnO2

• bandgap values were shown to increase with the vacuum annealing treatment temperature (from 3.41 eV at 300 °C to 3.60 eV at 600 °C), where the amorphous to crystalline conversion was observed only at 600 °C, accompanied by an almost complete fluorine loss [33]. Results and Discussion Structural properties

Characterization and influence of hydroxyapatite nanopowders on living cells

• Przemyslaw Oberbek,
• Tomasz Bolek,
• Adrian Chlanda,
• Seishiro Hirano,
• Sylwia Kusnieruk,
• Julia Rogowska-Tylman,
• Ganna Nechyporenko,
• Viktor Zinchenko,
• Wojciech Swieszkowski and
• Tomasz Puzyn

Beilstein J. Nanotechnol. 2018, 9, 3079–3094, doi:10.3762/bjnano.9.286

• ; the particle size associated with the controlled reaction time and the annealing of the material at 375 °C slightly negatively influenced the interaction with cells, but no toxic effect was observed. Most of the materials induced cell growth at low concentration levels. The overdose effect is best

Femtosecond laser-assisted fabrication of chalcopyrite micro-concentrator photovoltaics

• Franziska Ringleb,
• Stefan Andree,
• Berit Heidmann,
• Jörn Bonse,
• Katharina Eylers,
• Owen Ernst,
• Torsten Boeck,
• Martina Schmid and
• Jörg Krüger

Beilstein J. Nanotechnol. 2018, 9, 3025–3038, doi:10.3762/bjnano.9.281

• pressure for CISe samples from the nucleation approach and all samples from the LIFT approach, or in an ultrahigh-vacuum chamber with a directed selenium beam for CIGSe samples from the nucleation approach. In both cases, the temperature protocol comprised an annealing step at around 200–250 °C followed by

Hydrogen-induced plasticity in nanoporous palladium

• Markus Gößler,
• Eva-Maria Steyskal,
• Markus Stütz,
• Norbert Enzinger and
• Roland Würschum

Beilstein J. Nanotechnol. 2018, 9, 3013–3024, doi:10.3762/bjnano.9.280

• consequently a homogeneous single-phase alloy. The produced alloy drop was thinned to a platelet (4–5 mm in height) using a screw press. Homogeneity of the alloy was confirmed by XRD-measurements. Further processing consisted of several consecutive rolling and annealing steps until a thickness of 270 μm was

• reached. The annealing steps were conducted in a vacuum furnace at 700 °C and 10−5 mbar for 1 h. The resulting foil was cut into squares of 5 × 5 mm2. Dealloying The setup used for in situ dilatometry during electrochemical characterisation was similar to that described in an earlier work of our group [17

Size limits of magnetic-domain engineering in continuous in-plane exchange-bias prototype films

• Alexander Gaul,
• Daniel Emmrich,
• Timo Ueltzhöffer,
• Henning Huckfeldt,
• Hatice Doğanay,
• Johanna Hackl,
• Muhammad Imtiaz Khan,
• Daniel M. Gottlob,
• Gregor Hartmann,
• André Beyer,
• Dennis Holzinger,
• Slavomír Nemšák,
• Claus M. Schneider,
• Armin Gölzhäuser,
• Günter Reiss and
• Arno Ehresmann

Beilstein J. Nanotechnol. 2018, 9, 2968–2979, doi:10.3762/bjnano.9.276

• ][20][21], laser annealing [22][23][24], thermally assisted scanning probe lithography [25], or a combination of spatially broad laser- or ion-beams and shadow masks [26][27][28][29][30]. Especially in magnonic [14] and sensor applications [4] in-plane magnetic domain patterns play a key role and are

• assisted scanning probe lithography [25] or 250 nm wide dots fabricated by direct interferometric laser annealing [34]. Local annealing, however, results in three-dimensional temperature gradients within the magnetic film causing thermal diffusion and material intermixing over several hundreds of

Site-controlled formation of single Si nanocrystals in a buried SiO₂ matrix using ion beam mixing

• Xiaomo Xu,
• Thomas Prüfer,
• Daniel Wolf,
• Hans-Jürgen Engelmann,
• Lothar Bischoff,
• René Hübner,
• Karl-Heinz Heinig,
• Wolfhard Möller,
• Stefan Facsko,
• Johannes von Borany and
• Gregor Hlawacek

Beilstein J. Nanotechnol. 2018, 9, 2883–2892, doi:10.3762/bjnano.9.267

• of NCs can form near the Si/SiO2 interface after a post-annealing process [18]. Si NC layer formation via ion beam mixing, which is studied both theoretically and experimentally [19], has capacitated the manufacturing of Si NC-based non-volatile memory devices [20]. A possible route to fabricate a Si

• is supported by computer simulations of the ion beam mixing and phase separation process. Second, a systematic study of Si+ NC formation is reported, to define optimized irradiation and annealing parameters. Third, these parameters are adapted to the FIB approach using the HIM. For this scenario

• the simulated annealing. The simulations show that after ion beam mixing with 100 Si+ nm−2 at 50 keV only a small change in stoichiometry is expected for the center of the thick oxide layer. A high Si excess due to ion beam mixing is only observed close to the Si/SiO2 interface. As a result, two

Nanostructure-induced performance degradation of WO₃·nH₂O for energy conversion and storage devices

• Zhenyin Hai,
• Mohammad Karbalaei Akbari,
• Zihan Wei,
• Danfeng Cui,
• Chenyang Xue,
• Hongyan Xu,
• Philippe M. Heynderickx,
• Francis Verpoort and
• Serge Zhuiykov

Beilstein J. Nanotechnol. 2018, 9, 2845–2854, doi:10.3762/bjnano.9.265

• deionized water to a total volume of 12.5 mL accompanied by another 15 min of stirring. The prepared seed solution was spin-coated onto FTO/glass at 3000 rpm for four times with each step consisting of 40 s spin-coating at room temperature followed by annealing at 350 °C for 20 min. The as-prepared FTO

Graphene-enhanced metal oxide gas sensors at room temperature: a review

• Dongjin Sun,
• Yifan Luo,
• Marc Debliquy and
• Chao Zhang

Beilstein J. Nanotechnol. 2018, 9, 2832–2844, doi:10.3762/bjnano.9.264

• active sites. Meng and co-workers [81] published an inspiring study, where they develop a microwave-assisted hydrothermal technique to grow CuO rods in GO suspension using cetyltrimethylammonium bromide (CTAB) as a soft template. The Cu2O nanorods–rGO hybrids obtained after annealing showed a porous

Oriented zinc oxide nanorods: A novel saturable absorber for lasers in the near-infrared

• Pavel Loiko,
• Tanujjal Bora,
• Josep Maria Serres,
• Haohai Yu,
• Magdalena Aguiló,
• Francesc Díaz,
• Uwe Griebner,
• Valentin Petrov,
• Xavier Mateos and
• Joydeep Dutta

Beilstein J. Nanotechnol. 2018, 9, 2730–2740, doi:10.3762/bjnano.9.255

• -level pulse energy. The output characteristics of these lasers were limited by the scattering losses in ZnO NRs, which can be optimized by the synthesis method, for example, by additional annealing. Further improvement of the ZnO NR SA properties can follow two routes. First, the ZnO nanostructures can

Low cost tips for tip-enhanced Raman spectroscopy fabricated by two-step electrochemical etching of 125 µm diameter gold wires

• Antonino Foti,
• Francesco Barreca,
• Enza Fazio,
• Cristiano D’Andrea,
• Paolo Matteini,
• Onofrio Maria Maragò and
• Pietro Giuseppe Gucciardi

Beilstein J. Nanotechnol. 2018, 9, 2718–2729, doi:10.3762/bjnano.9.254

• are prepared in deionized water. Target molecules are absorbed on Au(111) flat films that have undergone standard flame annealing in order to obtain crystalline terraces of about 100 nm in size. The gold film substrates are immersed for 2 h and 30 min and subsequently rinsed in deionized water in

Impact of the anodization time on the photocatalytic activity of TiO₂ nanotubes

• Jesús A. Díaz-Real,
• Geyla C. Dubed-Bandomo,
• Juan Galindo-de-la-Rosa,
• Luis G. Arriaga,
• Janet Ledesma-García and
• Nicolas Alonso-Vante

Beilstein J. Nanotechnol. 2018, 9, 2628–2643, doi:10.3762/bjnano.9.244

• ] observed that a water-based electrolyte containing NH4F induced a co-doping with F and N in the TNTs. Their study suggested that a combination of applied potential and annealing temperature were responsible for the high photocatalytic activity (PCA) of their materials in the oxidation of methyl orange. In

• measurements were performed and the results are shown for Ti 2p, O 1s, F 1s and N 1s in Figure 2 and Table 1. All measurements were obtained after thermal annealing, for which the discussion of composition in terms of carbon is not considered. At first glance, the presence of fluorine can be observed which

• and optical properties and this is further discussed in the following sections. Raman spectroscopy Raman spectra obtained after annealing at 450 °C in air are shown in Figure 4. Anatase is the stable phase with bands at 193.1 (Eg), 393.7 (B1g), 514.2 (A1g), and 634.7 cm−1 (Eg), as well as a sharp and

Au–Si plasmonic platforms: synthesis, structure and FDTD simulations

• Anna Gapska,
• Marcin Łapiński,
• Paweł Syty,
• Wojciech Sadowski,
• Józef E. Sienkiewicz and
• Barbara Kościelska

Beilstein J. Nanotechnol. 2018, 9, 2599–2608, doi:10.3762/bjnano.9.241

• eutectic from Au and the substrate. In order to determine homogeneous shape and space distribution, the influence of annealing conditions and the initial thickness of the Au film on the nanostructures was analyzed. For the surface morphology studies, SEM and AFM measurements were performed. The structure

• thin films are most often metastable and can dewet or agglomerate with increase of temperature. During annealing of thin films, small fluctuations of the film thickness appear leading to the creation of voids in the film and their subsequent growth. This can happen well below melting temperature of the

• requirement for very small time steps. Results and Discussion Structure and UV–vis absorption The formation of nanostructures from 2.8 nm thick Au thin films, at different annealing temperatures is shown in Figure 2b–g. All films presented in these pictures were annealed for 15 min. For comparison, an SEM

Exploring the photoleakage current and photoinduced negative bias instability in amorphous InGaZnO thin-film transistors with various active layer thicknesses

• Dapeng Wang and
• Mamoru Furuta

Beilstein J. Nanotechnol. 2018, 9, 2573–2580, doi:10.3762/bjnano.9.239

• annealing and N2O plasma treatment [31]; and (ii) inactivating the defects in the semiconductor by means of introducing new elements to form stable chemical bonds with the defects, for example by fluoride ion implantation and nitrogen annealing [32][33]. Conclusion The impact of the TIGZO on the

High-temperature magnetism and microstructure of a semiconducting ferromagnetic (GaSb)_1−x(MnSb)_x alloy

• Leonid N. Oveshnikov,
• Elena I. Nekhaeva,
• Alexey V. Kochura,
• Alexander B. Davydov,
• Mikhail A. Shakhov,
• Sergey F. Marenkin,
• Oleg A. Novodvorskii,
• Alexander P. Kuzmenko,
• Alexander L. Vasiliev,
• Boris A. Aronzon and
• Erkki Lahderanta

Beilstein J. Nanotechnol. 2018, 9, 2457–2465, doi:10.3762/bjnano.9.230

• pristine films correspond to diffraction patterns for the hexagonal compound with the space group P63/mmc. Also, the image analysis showed that the morphology of the film and the lateral dimensions of the film columns remained the same after annealing. It should be noted, that the energy-dispersive X-ray

• microanalysis showed a slight (2–3%) decrease of Mn content in the film volume after annealing. This can be related to the details of sample preparation (e.g., the presence of a thicker damaged layer on the surface) or to the diffusion of Mn atoms. Thus, we can conclude that film annealing causes a phase

• )1−x(MnSb)x films with x = 0.41 and thickness d = 120–135 nm. Electron microscopy data suggests that studied films have single-phase columnar structure in the volume. It was found that annealing process induces a phase transition of hexagonal GaSb matrix into a cubic matrix. AFM and MFM studies

Pinning of a ferroelectric Bloch wall at a paraelectric layer

• Vilgelmina Stepkova and
• Jiří Hlinka

Beilstein J. Nanotechnol. 2018, 9, 2356–2360, doi:10.3762/bjnano.9.220

• ferroelectric Bloch walls encountering a layer of paraelectric material by means of phase-field simulation. This technique allows the relaxed domain wall profiles to be predicted by simulated annealing of the system based on numerical solution of material-specific time-dependent Ginzburg–Landau–Devonshire

• the walls in the simulation box, but there were no real constrains introduced there, only the natural limitations resulting from the standard protocol of simulated annealing procedure, governed by the time-dependent Ginzburg–Landau equation. The hysteresis loop shown in Figure 8 has been calculated

Block copolymers for designing nanostructured porous coatings

• Roberto Nisticò

Beilstein J. Nanotechnol. 2018, 9, 2332–2344, doi:10.3762/bjnano.9.218

• -organic bond. The aqueous environment favored the extraction of the freely accessible, soluble PEO and Ru-PEO moieties, leaving both PS and Ru-PS moieties to form the nanoporous polymeric matrix. It has been demonstrated that by controlling the annealing procedure and the humidity, it is possible to

• domains are horizontally (parallel) oriented [90]. As reported previously [90], the order achieved in thin films made by PS-b-PEO copolymers depends only on either the solvent casting or the solvent vapor annealing conditions, and not the substrate. Furthermore, the presence of the solvent in these

Two-dimensional photonic crystals increasing vertical light emission from Si nanocrystal-rich thin layers

• Lukáš Ondič,
• Marian Varga,
• Ivan Pelant,
• Alexander Kromka,
• Karel Hruška and
• Robert G. Elliman

Beilstein J. Nanotechnol. 2018, 9, 2287–2296, doi:10.3762/bjnano.9.213

• good qualitative agreement with the measured ones. Fabrication of the samples Firstly, SiNC-rich layers were fabricated by Si ion implantation into a polished silica substrate followed by thermal annealing at 1100 °C (for details see [28]). An implant energy of 400 keV with an implant fluence of 1

Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO₂/Si₃N₄-coating

• Dirk König,
• Daniel Hiller,
• Noël Wilck,
• Birger Berghoff,
• Merlin Müller,
• Sangeeta Thakur,
• Giovanni Di Santo,
• Luca Petaccia,
• Joachim Mayer,
• Sean Smith and
• Joachim Knoch

Beilstein J. Nanotechnol. 2018, 9, 2255–2264, doi:10.3762/bjnano.9.210

• swiftly loaded into the ultrahigh vacuum (UHV) annealing chamber. All NWell samples were contacted via a lateral metal contact frame on the front surface which was processed by photolithographical structuring, wet-chemical mesa etching and thermal evaporation of Al. The reference Si-wafer was contacted

Lead-free hybrid perovskites for photovoltaics

• Oleksandr Stroyuk

Beilstein J. Nanotechnol. 2018, 9, 2209–2235, doi:10.3762/bjnano.9.207

• annealing at 100 °C [162]. The last step yields a much more uniform and homogeneous MABI layer than conventional single-step spin-coating/annealing resulting in almost doubled PCE. Highly compact and pin-hole-free MABI films can be produced by a two-step process including the high-vacuum deposition of BiI3

• MAPI [88]. Cs3Sb2I9 can exist as two polymorphs – a layered (2D) modification built by two-dimensional layers of polyanions and a “dimer” (0D) form built of isolated dioctahedral Sb2I93− anions [89]. The HP formation can be directed to one of these forms by tailoring the temperature of annealing, the

• 0D and 2D modifications forming at 150 and 250 °C, respectively. The layered 2D form demonstrated higher electron and hole mobilities and a better tolerance to defects as compared to the dimer-built 0D polymorph. The 2D-Cs3Sb2I9 HP can be formed by annealing the original metal iodide mixture at 250

Electrospun one-dimensional nanostructures: a new horizon for gas sensing materials

• Muhammad Imran,
• Nunzio Motta and
• Mahnaz Shafiei

Beilstein J. Nanotechnol. 2018, 9, 2128–2170, doi:10.3762/bjnano.9.202

• fabrication strategy for synthesis of SnO2 NFs with a branch-on-stem morphology using electrospinning, oxygen plasma etching, sputtering and annealing. Electrospun PVP NFs were first etched with oxygen plasma to make a hierarchical template. Afterwards, a SnO2 film is deposited by sputtering and the PVP

• template is removed by annealing. The morphology of the NFs is dependent on sputtering time, resulting in uniformly distributed branches all over stem. Jun et al. [77] developed polypyrrole (PPy)-coated SnO2 tube-in-tube structures using single-nozzle electrospinning with a phase separation solvent method

• annealing and calcination [83]. A very low detection limit (9.7 ppb NOx) with an optimal response time (20 s) is achieved with nanocrystalline (5–10 nm) SnO2 NTs at room temperature [141]. Similar behaviour is exhibited by p-type NiO and CuO toward CO and NO2 [111][112]. The gas sensing behaviour also