Blue and white light emission from zinc oxide nanoforests

• Nafisa Noor,
• Luca Lucera,
• Thomas Capuano,
• Venkata Manthina,
• Alexander G. Agrios,
• Helena Silva and
• Ali Gokirmak

Beilstein J. Nanotechnol. 2015, 6, 2463–2469, doi:10.3762/bjnano.6.255

• . Since the ZnO nanoforest material has relatively weak mechanical properties and adhesion to the substrate, probing with tungsten tips causes some shifting of this material and so the probes are likely to touch both ZnO and the polysilicon substrate. The room-temperature electrical resistivity of the ZnO

• heating, the current paths will change depending on the temperature dependence of the resistivity of these two materials. Due to the large difference in resistivity, however, it is likely that the current flows mostly through the polysilicon substrate until the electrical breakdown of air or the ZnO

• nanorods occurs under the high fields and lower resistivity paths open through the ZnO nanoforest. Because of the geometrical nonuniformity of the ZnO nanoforest, the electrical resistance and electric field distribution between two probes are also nonuniform. Therefore, some segments along the current

A single-source precursor route to anisotropic halogen-doped zinc oxide particles as a promising candidate for new transparent conducting oxide materials

• Daniela Lehr,
• Markus R. Wagner,
• Johanna Flock,
• Julian S. Reparaz,
• Clivia M. Sotomayor Torres,
• Alexander Klaiber,
• Thomas Dekorsy and
• Sebastian Polarz

Beilstein J. Nanotechnol. 2015, 6, 2161–2172, doi:10.3762/bjnano.6.222

• resistivity of the order ρ ≈ 1 × 102 μΩ·cm. ITO is highly conductive, transparent in the visible and reflective in the IR spectral region [14]. Because indium is a rare element (with an abundancy of (1.00 × 10−5)% in the earth crust) [15], and due to the steadily growing need and price, there is a large

• the grain-boundary influence can significantly differ from sample to sample. This can also be seen in Figure S6b (Supporting Information File 1). For higher Cl content, when the tendency for the formation of separated particles is more pronounced (Figure 3), the resistivity raises due to the enhanced

Correction: Formation of pure Cu nanocrystals upon post-growth annealing of Cu–C material obtained from focused electron beam induced deposition: comparison of different methods

• Aleksandra Szkudlarek,
• Alfredo Rodrigues Vaz,
• Yucheng Zhang,
• Andrzej Rudkowski,
• Czesław Kapusta,
• Rolf Erni,
• Stanislav Moshkalev and
• Ivo Utke

Beilstein J. Nanotechnol. 2015, 6, 1935–1936, doi:10.3762/bjnano.6.196

• nanocrystals; focused electron beam induced deposition (FEBID); post-growth annealing of Cu–C material; In Figure 8 of the original article, the scale of the ordinate was wrong. The correct figure looks as follows: Figure 8 in the original article: Calculated resistivity from the resistance measurement of a

The role of low-energy electrons in focused electron beam induced deposition: four case studies of representative precursors

• Rachel M. Thorman,
• Ragesh Kumar T. P.,
• D. Howard Fairbrother and
• Oddur Ingólfsson

Beilstein J. Nanotechnol. 2015, 6, 1904–1926, doi:10.3762/bjnano.6.194

• and electron beam-assisted in situ and post-deposition treatment with processing gases, however, considerably higher Pt content has been achieved [55][56], and resistivity only about six times that of bulk Pt may be attained [57][58]. Such approaches include exposure to atomic hydrogen [54], water [59

• :1 and 1:3, respectively. Hence, carbon loss is clearly much more pronounced than nitrogen loss. Furthermore, EDX and TEM studies along with resistivity measurements indicate that the deposit consists of Co nano-grains embedded in an insulating CoO matrix [82]. The chemical speciation of the nitrogen

Optimized design of a nanostructured SPCE-based multipurpose biosensing platform formed by ferrocene-tethered electrochemically-deposited cauliflower-shaped gold nanoparticles

• Wicem Argoubi,
• Maroua Saadaoui,
• Sami Ben Aoun and
• Noureddine Raouafi

Beilstein J. Nanotechnol. 2015, 6, 1840–1852, doi:10.3762/bjnano.6.187

• ferrocene derivative, the antibody and BSA (Figure 4b). In the first step, electrodeposition of gold nanoparticles on the carbon surface provokes a sharp decrease of the surface resistivity because of the higher conductivity of gold. The subsequent self-assembly of the ferrocene derivative induces a roughly

• 4-fold increase of the surface resistivity because of the total passivation of the gold surface by a sulfur layer. Further modification with the antibody and BSA increases the surface impedance due to the electron transfer from the redox probe present in the solution. Thus, the ferrocene covered by

Formation of pure Cu nanocrystals upon post-growth annealing of Cu–C material obtained from focused electron beam induced deposition: comparison of different methods

• Aleksandra Szkudlarek,
• Alfredo Rodrigues Vaz,
• Yucheng Zhang,
• Andrzej Rudkowski,
• Czesław Kapusta,
• Rolf Erni,
• Stanislav Moshkalev and
• Ivo Utke

Beilstein J. Nanotechnol. 2015, 6, 1508–1517, doi:10.3762/bjnano.6.156

• to obtain pure metal CVD films with the same resistivity as in a bulk material at deposition temperatures below 300 °C [35][36][37]. Recently, it was shown for condensed monolayers of Cu(hfac)2 (also Pt(hfac)2 and Pd(hfac)2) that electron-beam irradiation results in about 80 atom % of carbon content

• approaching 10 MA/cm2 which is about a factor 100 below our maximum current densities applied. A large resistance drop was observed after nanocrystals precipitated on the surface around 150 °C. An increase in resistivity of one order of magnitude can be observed upon the cooling cycle from 180 °C to 25 °C

• annealing and continuous TEM observation (200 keV). Large Cu nanocrystals form inside the rod. c) Bright field image of another rod not observed during the same annealing process. Cu nanocrystals form at the outside surface of the rod. Calculated resistivity from the resistance measurement of a Cu–C line

Current–voltage characteristics of manganite–titanite perovskite junctions

• Benedikt Ifland,
• Patrick Peretzki,
• Birte Kressdorf,
• Philipp Saring,
• Andreas Kelling,
• Michael Seibt and
• Christian Jooss

Beilstein J. Nanotechnol. 2015, 6, 1467–1484, doi:10.3762/bjnano.6.152

• > ΘD/2 to determine the activation energy of the thermally activated hopping of small polarons. According to Bogomolov et al. [40], in the adiabatic limit, the resistivity can be written as with a prefactor, R0. For the measured J–V curves, the activation energy is calculated to be EA,RS = 126.1(1) meV

Structural transitions in electron beam deposited Co–carbonyl suspended nanowires at high electrical current densities

• Gian Carlo Gazzadi and
• Stefano Frabboni

Beilstein J. Nanotechnol. 2015, 6, 1298–1305, doi:10.3762/bjnano.6.134

• resistivity obtained considering SNW 1 alone drops from 1.6 × 104 μΩ·cm, before the transition, to about 110 μΩ·cm, a value to be compared to 6 μΩ·cm for bulk cobalt. SEM inspection after this measurement shows no further difference from the picture in Figure 2b. TEM structural analysis after these electrical

• linear behavior with a resistance of 223 kΩ and resistivity of 5 × 104 μΩ·cm, while the second I–V curve (red line) shows a slight upward bending as the voltage increases above 0.1 V. All subsequent I–V curves show an increasing bending for increasing voltage. These semiconductor-like trends are typical

• at the extreme points of the negative interval. The measured resistance is 23 kΩ, corresponding to a resistivity of 2.5 × 103 μΩ·cm. The second measurement (red line) starts exhibiting the bent-up characteristic, less pronounced than for SNW 2, and also an asymmetry between positive and negative

Electrical characterization of single molecule and Langmuir–Blodgett monomolecular films of a pyridine-terminated oligo(phenylene-ethynylene) derivative

• Henrry M. Osorio,
• Santiago Martín,
• María Carmen López,
• Santiago Marqués-González,
• Simon J. Higgins,
• Richard J. Nichols,
• Paul J. Low and
• Pilar Cea

Beilstein J. Nanotechnol. 2015, 6, 1145–1157, doi:10.3762/bjnano.6.116

• temperature (20 ± 1 °C) clean room, was employed to prepare the Langmuir films. A Wilhelmy paper plate pressure sensor was used to measure the surface pressure (π) of the monolayers. The subphase was pure water (Millipore Milli-Q, resistivity 18.2 MΩ·cm). A 2.5 × 10−5 M solution of 1 in CHCl3 (solvent

High sensitivity and high resolution element 3D analysis by a combined SIMS–SPM instrument

• Yves Fleming and
• Tom Wirtz

Beilstein J. Nanotechnol. 2015, 6, 1091–1099, doi:10.3762/bjnano.6.110

• used in aerospace industry due to their high robustness and resistivity even at high temperatures [18]. The different domains inside these alloys form during the annealing step [19]. Figure 2a and Figure 2b showing the 2D SIMS images obtained on this alloy highlight that a γ′-Ni3Al precipitate phase is

Tunable magnetism on the lateral mesoscale by post-processing of Co/Pt heterostructures

• Oleksandr V. Dobrovolskiy,
• Maksym Kompaniiets,
• Roland Sachser,
• Fabrizio Porrati,
• Christian Gspan,
• Harald Plank and
• Michael Huth

Beilstein J. Nanotechnol. 2015, 6, 1082–1090, doi:10.3762/bjnano.6.109

• pressure of 1.5 × 10−5 mbar through a home-made gas injection system. The samples were subjected to 12 cycles of oxygen flux switched on for 5 min interrupted by 5-minute turn-offs. The resistivity of the as-deposited Pt-based layers was 0.4 Ω·cm, decreased to about 90 mΩ·cm as the temperature rose to 150

• metallic. The resistivities of the samples at 10 K are about 40 μΩ·cm and the room temperature-to-10-K resistance ratios are about 1.3. The room temperature resistivity values are an order of magnitude larger than the literature values for bulk Co and Pt [42] and are in agreement with the recently reported

Electron-stimulated purification of platinum nanostructures grown via focused electron beam induced deposition

• Brett B. Lewis,
• Michael G. Stanford,
• Jason D. Fowlkes,
• Kevin Lester,
• Harald Plank and
• Philip D. Rack

Beilstein J. Nanotechnol. 2015, 6, 907–918, doi:10.3762/bjnano.6.94

• PtCx deposit as the tunnel coupling strengths increase for percolating networks [17]. For fully purified materials, our previous work [16] demonstrated a purely metallic material and thus low resistivity only one order of magnitude higher than bulk Pt. Future work will correlate purification time to

Electroburning of few-layer graphene flakes, epitaxial graphene, and turbostratic graphene discs in air and under vacuum

• Andrea Candini,
• Nils Richter,
• Domenica Convertino,
• Camilla Coletti,
• Franck Balestro,
• Wolfgang Wernsdorfer,
• Mathias Kläui and
• Marco Affronte

Beilstein J. Nanotechnol. 2015, 6, 711–719, doi:10.3762/bjnano.6.72

• typically leads to a resistivity of around 3.5 Ω·µm in untreated discs [24]. They can be easily deposited on a substrate (SiO2 in our case) in large quantities (hundreds of discs with a diameter of about 1–2 µm in a single deposition). In a first attempt, simple pairs of source–drain electrodes have been

Observation of a photoinduced, resonant tunneling effect in a carbon nanotube–silicon heterojunction

• Carla Aramo,
• Antonio Ambrosio,
• Michelangelo Ambrosio,
• Maurizio Boscardin,
• Paola Castrucci,
• Michele Crivellari,
• Marco Cilmo,
• Maurizio De Crescenzi,
• Francesco De Nicola,
• Emanuele Fiandrini,
• Valentina Grossi,
• Pasqualino Maddalena,
• Maurizio Passacantando,
• Sandro Santucci,
• Manuela Scarselli and
• Antonio Valentini

Beilstein J. Nanotechnol. 2015, 6, 704–710, doi:10.3762/bjnano.6.71

• substrates used to build the photodetector were fabricated by Fondazione Bruno Kessler (FBK) in Povo, Trento (Italy), unlike the substrate of the devices shown in Figure 1 of [13]. On the upper part of the n-doped silicon wafer (1 × 1 cm2, 300 μm thickness and resistivity of 3–12 Ω∙cm) an insulating layer of

• used in this work and the substrate used in [13] are: the Si3N4 insulation layer on the upper part of the Si is much thinner (60 nm instead of 140 nm), the different thickness of Si (300 μm instead of 500 μm), the different Si resistivity (3–12 Ω∙cm instead of 40 Ω∙cm) and the absence of a Si3N4

Simple approach for the fabrication of PEDOT-coated Si nanowires

• Mingxuan Zhu,
• Marielle Eyraud,
• Judikael Le Rouzo,
• Nadia Ait Ahmed,
• Florence Boulc’h,
• Claude Alfonso,
• Philippe Knauth and
• François Flory

Beilstein J. Nanotechnol. 2015, 6, 640–650, doi:10.3762/bjnano.6.65

• as chemical etching and electrochemical deposition. To our knowledge, these two processes have never been combined for the production of such a hybrid material. Experimental SiNW etching and tapering Before chemical etching, the Si wafers (phosphorus-doped, <100> oriented, resistivity 1–10 Ω∙cm

Self-assembled anchor layers/polysaccharide coatings on titanium surfaces: a study of functionalization and stability

• Ognen Pop-Georgievski,
• Dana Kubies,
• Josef Zemek,
• Neda Neykova,
• Roman Demianchuk,
• Eliška Mázl Chánová,
• Miroslav Šlouf,
• Milan Houska and
• František Rypáček

Beilstein J. Nanotechnol. 2015, 6, 617–631, doi:10.3762/bjnano.6.63

• . Substrate preparation Clean, single-side-polished silicon wafers (CZ, orientation <100>, B-doped, resistivity 5–20 Ω∙cm) with a ≈50 nm SiO2 thermal overlayer (Siegert Consulting e.K., Germany) were used as substrates for the preparation of ultraflat titanium surfaces. Flat, titanium reference surfaces (50

Entropy effects in the collective dynamic behavior of alkyl monolayers tethered to Si(111)

• Christian Godet

Beilstein J. Nanotechnol. 2015, 6, 583–594, doi:10.3762/bjnano.6.60

• molecules with a UV-assisted liquid phase process [40][64]. A low-doped n-type Si (phosphorus doped, 1–10 Ω·cm resistivity, Siltronix) was chosen to obtain rectifying junctions. After etching, the Si(111):H surface was used immediately for covalent binding of the mixed n-dodecyl/undecanoic acid-terminated

Chains of carbon atoms: A vision or a new nanomaterial?

• Florian Banhart

Beilstein J. Nanotechnol. 2015, 6, 559–569, doi:10.3762/bjnano.6.58

• . One single bond will have a decisive influence on the transport. At the contact between a chain and a metal, the delocalization of the conduction electrons and their overlap with the π-electrons of the chain could lead to an ohmic contact with low resistivity. Contacts with graphene or other sp2

In situ scanning tunneling microscopy study of Ca-modified rutile TiO₂(110) in bulk water

• Giulia Serrano,
• Beatrice Bonanni,
• Tomasz Kosmala,
• Marco Di Giovannantonio,
• Ulrike Diebold,
• Klaus Wandelt and
• Claudio Goletti

Beilstein J. Nanotechnol. 2015, 6, 438–443, doi:10.3762/bjnano.6.44

• purification system, resistivity = 18.2 MΩ∙cm). In order to avoid contamination by oxygen and other gaseous molecules in solution, the milli-Q water was degassed prior to the Argon flux for 1 h. STM measurements were performed using an electrochemical STM [19] equipped with an electrochemical cell positioned

Electrical response of liquid crystal cells doped with multi-walled carbon nanotubes

• Amanda García-García,
• Ricardo Vergaz,
• José F. Algorri,
• Xabier Quintana and
• José M. Otón

Beilstein J. Nanotechnol. 2015, 6, 396–403, doi:10.3762/bjnano.6.39

• set of a capacitor and a resistor (Figure 2) [22]. Every circuit element can be matched to physical parameters as follows: R1 stands for the resistivity of the outer elements and electrodes connections. R2 results from the conductivity of the doped or undoped LC material and is caused by the mobility

• [24], generating a hybrid structure that follows the electric field, but does not relax as the restoring elastic forces cannot compete with nanometer-sized structures. This idea is supported by the fact that the high resistivity of the original state is not restored even by heating the sample above

Materials and characterization techniques for high-temperature polymer electrolyte membrane fuel cells

• Roswitha Zeis

Beilstein J. Nanotechnol. 2015, 6, 68–83, doi:10.3762/bjnano.6.8

• potentials leads to severe corrosion of theses carbon materials, a drawback well-known from the PAFC research. Carbon nanotubes are a promising alternative for catalyst support because of their higher corrosion resistivity [47]. Matsumoto et al. [48] fabricated a catalyst material by wrapping individual

Formation of stable Si–O–C submonolayers on hydrogen-terminated silicon(111) under low-temperature conditions

• Yit Lung Khung,
• Siti Hawa Ngalim,
• Andrea Scaccabarozzi and
• Dario Narducci

Beilstein J. Nanotechnol. 2015, 6, 19–26, doi:10.3762/bjnano.6.3

• . Experimental Materials Silicon wafers (111), were boron-doped (resistivity of 0.01–0.018 Ω·cm) and were used in this experiment. Sulfuric acid (Aldrich) and hydrogen peroxide (BDH Prolabo) were of semiconductor grade. 4-ethynylbenzyl alcohol and 4-ethynyl-α,α,α-trifluorotoluene were purchased from Sigma

Exploring plasmonic coupling in hole-cap arrays

• Thomas M. Schmidt,
• Maj Frederiksen,
• Vladimir Bochenkov and
• Duncan S. Sutherland

Beilstein J. Nanotechnol. 2015, 6, 1–10, doi:10.3762/bjnano.6.1

• sulfate latex polystyrene particles with diameter of 0.11 µm were obtained from Invitrogen Denmark. Deionized water with 18.2 MΩ resistivity from a Millipore Milli-Q water system. Poly(methyl methacrylate) (PMMA) (Mw 120,000), Polystyrene (Mw 280,000), PDDA (poly(diallydimethylammonium chloride)) (Mw

Low cost, p-ZnO/n-Si, rectifying, nano heterojunction diode: Fabrication and electrical characterization

• Vinay Kabra,
• Lubna Aamir and
• M. M. Malik

Beilstein J. Nanotechnol. 2014, 5, 2216–2221, doi:10.3762/bjnano.5.230

• . Hall effect measurement The Hall effect measurement of a p-ZnO rectangular pellet with dimensions 0.8 × 0.8 × 0.1 cm3 was performed using a four-probe van der Pauw method using silver contacts, and data were averaged to ensure accuracy. The carrier concentration, Hall mobility and resistivity of p-ZnO

• values of the carrier concentration, Hall mobility and resistivity of Si substrate were found to be 2.3 × 1015 cm−3, 555 cm2/Vs, and 5 Ωcm, respectively. It is apparent that the carrier concentration, mobility and resistivity of these p-ZnO nanoparticles are sufficient for use in the fabrication of a

Electrical contacts to individual SWCNTs: A review

• Wei Liu,
• Christofer Hierold and
• Miroslav Haluska

Beilstein J. Nanotechnol. 2014, 5, 2202–2215, doi:10.3762/bjnano.5.229

• = h/4e2, rch is the channel resistance per unit length, Rc is the single contact resistance, ρc is the specific contact resistivity, Lc and Lch represent the contact width and the channel length, respectively, d is the diameter of the SWCNT, and Le is the mean free path for carrier scattering (which