Search results

Search for "resistivity" in Full Text gives 236 result(s) in Beilstein Journal of Nanotechnology. Showing first 200.

Formation of pure Cu nanocrystals upon post-growth annealing of Cu–C material obtained from focused electron beam induced deposition: comparison of different methods

  • Aleksandra Szkudlarek,
  • Alfredo Rodrigues Vaz,
  • Yucheng Zhang,
  • Andrzej Rudkowski,
  • Czesław Kapusta,
  • Rolf Erni,
  • Stanislav Moshkalev and
  • Ivo Utke

Beilstein J. Nanotechnol. 2015, 6, 1508–1517, doi:10.3762/bjnano.6.156

Graphical Abstract
  • to obtain pure metal CVD films with the same resistivity as in a bulk material at deposition temperatures below 300 °C [35][36][37]. Recently, it was shown for condensed monolayers of Cu(hfac)2 (also Pt(hfac)2 and Pd(hfac)2) that electron-beam irradiation results in about 80 atom % of carbon content
  • approaching 10 MA/cm2 which is about a factor 100 below our maximum current densities applied. A large resistance drop was observed after nanocrystals precipitated on the surface around 150 °C. An increase in resistivity of one order of magnitude can be observed upon the cooling cycle from 180 °C to 25 °C
  • annealing and continuous TEM observation (200 keV). Large Cu nanocrystals form inside the rod. c) Bright field image of another rod not observed during the same annealing process. Cu nanocrystals form at the outside surface of the rod. Calculated resistivity from the resistance measurement of a Cu–C line
PDF
Album
Supp Info
Correction
Full Research Paper
Published 13 Jul 2015

Current–voltage characteristics of manganite–titanite perovskite junctions

  • Benedikt Ifland,
  • Patrick Peretzki,
  • Birte Kressdorf,
  • Philipp Saring,
  • Andreas Kelling,
  • Michael Seibt and
  • Christian Jooss

Beilstein J. Nanotechnol. 2015, 6, 1467–1484, doi:10.3762/bjnano.6.152

Graphical Abstract
  • > ΘD/2 to determine the activation energy of the thermally activated hopping of small polarons. According to Bogomolov et al. [40], in the adiabatic limit, the resistivity can be written as with a prefactor, R0. For the measured J–V curves, the activation energy is calculated to be EA,RS = 126.1(1) meV
PDF
Album
Full Research Paper
Published 07 Jul 2015

Structural transitions in electron beam deposited Co–carbonyl suspended nanowires at high electrical current densities

  • Gian Carlo Gazzadi and
  • Stefano Frabboni

Beilstein J. Nanotechnol. 2015, 6, 1298–1305, doi:10.3762/bjnano.6.134

Graphical Abstract
  • resistivity obtained considering SNW 1 alone drops from 1.6 × 104 μΩ·cm, before the transition, to about 110 μΩ·cm, a value to be compared to 6 μΩ·cm for bulk cobalt. SEM inspection after this measurement shows no further difference from the picture in Figure 2b. TEM structural analysis after these electrical
  • linear behavior with a resistance of 223 kΩ and resistivity of 5 × 104 μΩ·cm, while the second I–V curve (red line) shows a slight upward bending as the voltage increases above 0.1 V. All subsequent I–V curves show an increasing bending for increasing voltage. These semiconductor-like trends are typical
  • at the extreme points of the negative interval. The measured resistance is 23 kΩ, corresponding to a resistivity of 2.5 × 103 μΩ·cm. The second measurement (red line) starts exhibiting the bent-up characteristic, less pronounced than for SNW 2, and also an asymmetry between positive and negative
PDF
Album
Full Research Paper
Published 11 Jun 2015

Electrical characterization of single molecule and Langmuir–Blodgett monomolecular films of a pyridine-terminated oligo(phenylene-ethynylene) derivative

  • Henrry M. Osorio,
  • Santiago Martín,
  • María Carmen López,
  • Santiago Marqués-González,
  • Simon J. Higgins,
  • Richard J. Nichols,
  • Paul J. Low and
  • Pilar Cea

Beilstein J. Nanotechnol. 2015, 6, 1145–1157, doi:10.3762/bjnano.6.116

Graphical Abstract
  • temperature (20 ± 1 °C) clean room, was employed to prepare the Langmuir films. A Wilhelmy paper plate pressure sensor was used to measure the surface pressure (π) of the monolayers. The subphase was pure water (Millipore Milli-Q, resistivity 18.2 MΩ·cm). A 2.5 × 10−5 M solution of 1 in CHCl3 (solvent
PDF
Album
Full Research Paper
Published 11 May 2015

High sensitivity and high resolution element 3D analysis by a combined SIMS–SPM instrument

  • Yves Fleming and
  • Tom Wirtz

Beilstein J. Nanotechnol. 2015, 6, 1091–1099, doi:10.3762/bjnano.6.110

Graphical Abstract
  • used in aerospace industry due to their high robustness and resistivity even at high temperatures [18]. The different domains inside these alloys form during the annealing step [19]. Figure 2a and Figure 2b showing the 2D SIMS images obtained on this alloy highlight that a γ′-Ni3Al precipitate phase is
PDF
Album
Supp Info
Full Research Paper
Published 30 Apr 2015

Tunable magnetism on the lateral mesoscale by post-processing of Co/Pt heterostructures

  • Oleksandr V. Dobrovolskiy,
  • Maksym Kompaniiets,
  • Roland Sachser,
  • Fabrizio Porrati,
  • Christian Gspan,
  • Harald Plank and
  • Michael Huth

Beilstein J. Nanotechnol. 2015, 6, 1082–1090, doi:10.3762/bjnano.6.109

Graphical Abstract
  • pressure of 1.5 × 10−5 mbar through a home-made gas injection system. The samples were subjected to 12 cycles of oxygen flux switched on for 5 min interrupted by 5-minute turn-offs. The resistivity of the as-deposited Pt-based layers was 0.4 Ω·cm, decreased to about 90 mΩ·cm as the temperature rose to 150
  • metallic. The resistivities of the samples at 10 K are about 40 μΩ·cm and the room temperature-to-10-K resistance ratios are about 1.3. The room temperature resistivity values are an order of magnitude larger than the literature values for bulk Co and Pt [42] and are in agreement with the recently reported
PDF
Album
Full Research Paper
Published 29 Apr 2015

Electron-stimulated purification of platinum nanostructures grown via focused electron beam induced deposition

  • Brett B. Lewis,
  • Michael G. Stanford,
  • Jason D. Fowlkes,
  • Kevin Lester,
  • Harald Plank and
  • Philip D. Rack

Beilstein J. Nanotechnol. 2015, 6, 907–918, doi:10.3762/bjnano.6.94

Graphical Abstract
  • PtCx deposit as the tunnel coupling strengths increase for percolating networks [17]. For fully purified materials, our previous work [16] demonstrated a purely metallic material and thus low resistivity only one order of magnitude higher than bulk Pt. Future work will correlate purification time to
PDF
Album
Full Research Paper
Published 08 Apr 2015

Electroburning of few-layer graphene flakes, epitaxial graphene, and turbostratic graphene discs in air and under vacuum

  • Andrea Candini,
  • Nils Richter,
  • Domenica Convertino,
  • Camilla Coletti,
  • Franck Balestro,
  • Wolfgang Wernsdorfer,
  • Mathias Kläui and
  • Marco Affronte

Beilstein J. Nanotechnol. 2015, 6, 711–719, doi:10.3762/bjnano.6.72

Graphical Abstract
  • typically leads to a resistivity of around 3.5 Ω·µm in untreated discs [24]. They can be easily deposited on a substrate (SiO2 in our case) in large quantities (hundreds of discs with a diameter of about 1–2 µm in a single deposition). In a first attempt, simple pairs of source–drain electrodes have been
PDF
Album
Supp Info
Full Research Paper
Published 11 Mar 2015

Observation of a photoinduced, resonant tunneling effect in a carbon nanotube–silicon heterojunction

  • Carla Aramo,
  • Antonio Ambrosio,
  • Michelangelo Ambrosio,
  • Maurizio Boscardin,
  • Paola Castrucci,
  • Michele Crivellari,
  • Marco Cilmo,
  • Maurizio De Crescenzi,
  • Francesco De Nicola,
  • Emanuele Fiandrini,
  • Valentina Grossi,
  • Pasqualino Maddalena,
  • Maurizio Passacantando,
  • Sandro Santucci,
  • Manuela Scarselli and
  • Antonio Valentini

Beilstein J. Nanotechnol. 2015, 6, 704–710, doi:10.3762/bjnano.6.71

Graphical Abstract
  • substrates used to build the photodetector were fabricated by Fondazione Bruno Kessler (FBK) in Povo, Trento (Italy), unlike the substrate of the devices shown in Figure 1 of [13]. On the upper part of the n-doped silicon wafer (1 × 1 cm2, 300 μm thickness and resistivity of 3–12 Ω∙cm) an insulating layer of
  • used in this work and the substrate used in [13] are: the Si3N4 insulation layer on the upper part of the Si is much thinner (60 nm instead of 140 nm), the different thickness of Si (300 μm instead of 500 μm), the different Si resistivity (3–12 Ω∙cm instead of 40 Ω∙cm) and the absence of a Si3N4
PDF
Album
Full Research Paper
Published 10 Mar 2015

Simple approach for the fabrication of PEDOT-coated Si nanowires

  • Mingxuan Zhu,
  • Marielle Eyraud,
  • Judikael Le Rouzo,
  • Nadia Ait Ahmed,
  • Florence Boulc’h,
  • Claude Alfonso,
  • Philippe Knauth and
  • François Flory

Beilstein J. Nanotechnol. 2015, 6, 640–650, doi:10.3762/bjnano.6.65

Graphical Abstract
  • as chemical etching and electrochemical deposition. To our knowledge, these two processes have never been combined for the production of such a hybrid material. Experimental SiNW etching and tapering Before chemical etching, the Si wafers (phosphorus-doped, <100> oriented, resistivity 1–10 Ω∙cm
PDF
Album
Full Research Paper
Published 04 Mar 2015

Self-assembled anchor layers/polysaccharide coatings on titanium surfaces: a study of functionalization and stability

  • Ognen Pop-Georgievski,
  • Dana Kubies,
  • Josef Zemek,
  • Neda Neykova,
  • Roman Demianchuk,
  • Eliška Mázl Chánová,
  • Miroslav Šlouf,
  • Milan Houska and
  • František Rypáček

Beilstein J. Nanotechnol. 2015, 6, 617–631, doi:10.3762/bjnano.6.63

Graphical Abstract
  • . Substrate preparation Clean, single-side-polished silicon wafers (CZ, orientation <100>, B-doped, resistivity 5–20 Ω∙cm) with a ≈50 nm SiO2 thermal overlayer (Siegert Consulting e.K., Germany) were used as substrates for the preparation of ultraflat titanium surfaces. Flat, titanium reference surfaces (50
PDF
Album
Supp Info
Full Research Paper
Published 02 Mar 2015

Entropy effects in the collective dynamic behavior of alkyl monolayers tethered to Si(111)

  • Christian Godet

Beilstein J. Nanotechnol. 2015, 6, 583–594, doi:10.3762/bjnano.6.60

Graphical Abstract
  • molecules with a UV-assisted liquid phase process [40][64]. A low-doped n-type Si (phosphorus doped, 1–10 Ω·cm resistivity, Siltronix) was chosen to obtain rectifying junctions. After etching, the Si(111):H surface was used immediately for covalent binding of the mixed n-dodecyl/undecanoic acid-terminated
PDF
Album
Full Research Paper
Published 26 Feb 2015

Chains of carbon atoms: A vision or a new nanomaterial?

  • Florian Banhart

Beilstein J. Nanotechnol. 2015, 6, 559–569, doi:10.3762/bjnano.6.58

Graphical Abstract
  • . One single bond will have a decisive influence on the transport. At the contact between a chain and a metal, the delocalization of the conduction electrons and their overlap with the π-electrons of the chain could lead to an ohmic contact with low resistivity. Contacts with graphene or other sp2
PDF
Album
Review
Published 25 Feb 2015

In situ scanning tunneling microscopy study of Ca-modified rutile TiO2(110) in bulk water

  • Giulia Serrano,
  • Beatrice Bonanni,
  • Tomasz Kosmala,
  • Marco Di Giovannantonio,
  • Ulrike Diebold,
  • Klaus Wandelt and
  • Claudio Goletti

Beilstein J. Nanotechnol. 2015, 6, 438–443, doi:10.3762/bjnano.6.44

Graphical Abstract
  • purification system, resistivity = 18.2 MΩ∙cm). In order to avoid contamination by oxygen and other gaseous molecules in solution, the milli-Q water was degassed prior to the Argon flux for 1 h. STM measurements were performed using an electrochemical STM [19] equipped with an electrochemical cell positioned
PDF
Album
Full Research Paper
Published 12 Feb 2015

Electrical response of liquid crystal cells doped with multi-walled carbon nanotubes

  • Amanda García-García,
  • Ricardo Vergaz,
  • José F. Algorri,
  • Xabier Quintana and
  • José M. Otón

Beilstein J. Nanotechnol. 2015, 6, 396–403, doi:10.3762/bjnano.6.39

Graphical Abstract
  • set of a capacitor and a resistor (Figure 2) [22]. Every circuit element can be matched to physical parameters as follows: R1 stands for the resistivity of the outer elements and electrodes connections. R2 results from the conductivity of the doped or undoped LC material and is caused by the mobility
  • [24], generating a hybrid structure that follows the electric field, but does not relax as the restoring elastic forces cannot compete with nanometer-sized structures. This idea is supported by the fact that the high resistivity of the original state is not restored even by heating the sample above
PDF
Album
Full Research Paper
Published 06 Feb 2015

Materials and characterization techniques for high-temperature polymer electrolyte membrane fuel cells

  • Roswitha Zeis

Beilstein J. Nanotechnol. 2015, 6, 68–83, doi:10.3762/bjnano.6.8

Graphical Abstract
  • potentials leads to severe corrosion of theses carbon materials, a drawback well-known from the PAFC research. Carbon nanotubes are a promising alternative for catalyst support because of their higher corrosion resistivity [47]. Matsumoto et al. [48] fabricated a catalyst material by wrapping individual
PDF
Album
Review
Published 07 Jan 2015

Formation of stable Si–O–C submonolayers on hydrogen-terminated silicon(111) under low-temperature conditions

  • Yit Lung Khung,
  • Siti Hawa Ngalim,
  • Andrea Scaccabarozzi and
  • Dario Narducci

Beilstein J. Nanotechnol. 2015, 6, 19–26, doi:10.3762/bjnano.6.3

Graphical Abstract
  • . Experimental Materials Silicon wafers (111), were boron-doped (resistivity of 0.01–0.018 Ω·cm) and were used in this experiment. Sulfuric acid (Aldrich) and hydrogen peroxide (BDH Prolabo) were of semiconductor grade. 4-ethynylbenzyl alcohol and 4-ethynyl-α,α,α-trifluorotoluene were purchased from Sigma
PDF
Album
Letter
Published 05 Jan 2015

Exploring plasmonic coupling in hole-cap arrays

  • Thomas M. Schmidt,
  • Maj Frederiksen,
  • Vladimir Bochenkov and
  • Duncan S. Sutherland

Beilstein J. Nanotechnol. 2015, 6, 1–10, doi:10.3762/bjnano.6.1

Graphical Abstract
  • sulfate latex polystyrene particles with diameter of 0.11 µm were obtained from Invitrogen Denmark. Deionized water with 18.2 MΩ resistivity from a Millipore Milli-Q water system. Poly(methyl methacrylate) (PMMA) (Mw 120,000), Polystyrene (Mw 280,000), PDDA (poly(diallydimethylammonium chloride)) (Mw
PDF
Album
Supp Info
Full Research Paper
Published 02 Jan 2015

Low cost, p-ZnO/n-Si, rectifying, nano heterojunction diode: Fabrication and electrical characterization

  • Vinay Kabra,
  • Lubna Aamir and
  • M. M. Malik

Beilstein J. Nanotechnol. 2014, 5, 2216–2221, doi:10.3762/bjnano.5.230

Graphical Abstract
  • . Hall effect measurement The Hall effect measurement of a p-ZnO rectangular pellet with dimensions 0.8 × 0.8 × 0.1 cm3 was performed using a four-probe van der Pauw method using silver contacts, and data were averaged to ensure accuracy. The carrier concentration, Hall mobility and resistivity of p-ZnO
  • values of the carrier concentration, Hall mobility and resistivity of Si substrate were found to be 2.3 × 1015 cm−3, 555 cm2/Vs, and 5 Ωcm, respectively. It is apparent that the carrier concentration, mobility and resistivity of these p-ZnO nanoparticles are sufficient for use in the fabrication of a
PDF
Album
Full Research Paper
Published 24 Nov 2014

Electrical contacts to individual SWCNTs: A review

  • Wei Liu,
  • Christofer Hierold and
  • Miroslav Haluska

Beilstein J. Nanotechnol. 2014, 5, 2202–2215, doi:10.3762/bjnano.5.229

Graphical Abstract
  • = h/4e2, rch is the channel resistance per unit length, Rc is the single contact resistance, ρc is the specific contact resistivity, Lc and Lch represent the contact width and the channel length, respectively, d is the diameter of the SWCNT, and Le is the mean free path for carrier scattering (which
PDF
Album
Review
Published 21 Nov 2014

Properties of plasmonic arrays produced by pulsed-laser nanostructuring of thin Au films

  • Katarzyna Grochowska,
  • Katarzyna Siuzdak,
  • Peter A. Atanasov,
  • Carla Bittencourt,
  • Anna Dikovska,
  • Nikolay N. Nedyalkov and
  • Gerard Śliwiński

Beilstein J. Nanotechnol. 2014, 5, 2102–2112, doi:10.3762/bjnano.5.219

Graphical Abstract
  • surface plasmon resonance (SPR) peak around 520 nm resulted in the observable decrease of the film roughness and resistivity [14]. In case of nanostructuring of a thin Au film by a pulsed-laser beam passing through a pinhole (60 μm), the forced arrangement of nanospheres into micro-circular patterns due
PDF
Album
Review
Published 13 Nov 2014

Photodetectors based on carbon nanotubes deposited by using a spray technique on semi-insulating gallium arsenide

  • Domenico Melisi,
  • Maria Angela Nitti,
  • Marco Valentini,
  • Antonio Valentini,
  • Teresa Ligonzo,
  • Giuseppe De Pascali and
  • Marianna Ambrico

Beilstein J. Nanotechnol. 2014, 5, 1999–2006, doi:10.3762/bjnano.5.208

Graphical Abstract
  • ), custom-made transparent Mylar masks were used to better confine the CNT deposition area. SI GaAs substrates (350 ± 25 μm, resistivity 5.4·107–9.1·107 Ω·cm, Hall mobility 5692–6025 cm2·V−1·s−1, carrier concentration 1.2·107–2.1·107 cm−3), produced by Wafer Technology LTD, were used for the fabrication of
PDF
Album
Full Research Paper
Published 05 Nov 2014

High speed e-beam lithography for gold nanoarray fabrication and use in nanotechnology

  • Jorge Trasobares,
  • François Vaurette,
  • Marc François,
  • Hans Romijn,
  • Jean-Louis Codron,
  • Dominique Vuillaume,
  • Didier Théron and
  • Nicolas Clément

Beilstein J. Nanotechnol. 2014, 5, 1918–1925, doi:10.3762/bjnano.5.202

Graphical Abstract
  • use an EBPG 5000 Plus from Vistec Lithography. The (100) Si substrate (resistivity = 10−3 Ω·cm) is cleaned with UV/ozone and native oxide etched before resist deposition. The e-beam lithography has been optimized by using a 45 nm-thick diluted (3:5 with anisole) PMMA (950 K). For the writing, we use
PDF
Album
Supp Info
Full Research Paper
Published 30 Oct 2014

Experimental techniques for the characterization of carbon nanoparticles – a brief overview

  • Wojciech Kempiński,
  • Szymon Łoś,
  • Mateusz Kempiński and
  • Damian Markowski

Beilstein J. Nanotechnol. 2014, 5, 1760–1766, doi:10.3762/bjnano.5.186

Graphical Abstract
  • carrier transport within the systems of CNs by varying the temperature, adsorbed molecules and external electric field. Due to the significant changes in resistivity induced by the host–guest interactions, the systems of CNs might prove interesting in the fields of gas sensing, molecular electronics or
  • energy allowing the hopping of charge carriers between the CNs [4][37]. Hopping charge carrier transport in the granular structures is described with the CGVRH model [4], from which the following equation has been derived: where ρ stands for the resistivity, ρ0 is a temperature-independent constant, T is
  • paramagnetic systems with the fixed number of spins (Langevin paramagnetism) [36]. In the case of the ACFs, the number of spins observed in EPR changes according to Equation 1. This is related to the CGVRH model, where resistivity depends on the temperature. In the classical approach [37] the resistivity ρ
PDF
Album
Review
Published 13 Oct 2014

Growth evolution and phase transition from chalcocite to digenite in nanocrystalline copper sulfide: Morphological, optical and electrical properties

  • Priscilla Vasthi Quintana-Ramirez,
  • Ma. Concepción Arenas-Arrocena,
  • José Santos-Cruz,
  • Marina Vega-González,
  • Omar Martínez-Alvarez,
  • Víctor Manuel Castaño-Meneses,
  • Laura Susana Acosta-Torres and
  • Javier de la Fuente-Hernández

Beilstein J. Nanotechnol. 2014, 5, 1542–1552, doi:10.3762/bjnano.5.166

Graphical Abstract
  • , optical, and morphological properties of the copper sulfide. In fact, digenite Cu1.8S is less resistive (346 Ω/sq) and has a lower energy band gap (1.6 eV) than chalcocite Cu2S (5.72 × 105 Ω/sq, 1.87 eV). Low resistivity was also obtained in CuxS synthesized in aqueous solution, despite its amorphous
  • ]. Electrical properties The CuxS films prepared in aqueous solution are amorphous with undefined morphology. They exhibit a low square electrical resistivity (about 103 Ω/sq) as shown in Figure 6. Chalcocite CuxS from organic solution has a resistance of the order of 105–106 Ω/sq, while crystalline CuxS has a
  • resistivity of about 107 Ω/sq at 240 °C and 102 Ω/sq at 260 °C, respectively. In fact, the samples obtained at 230 and 240 °C, which consist of a mixture of chalcocite and digenite phases, are more resistive than the digenite phase (sample at 260 °C). This means that the copper deficiency improves the
PDF
Album
Supp Info
Full Research Paper
Published 15 Sep 2014
Other Beilstein-Institut Open Science Activities