Group-13 and group-15 doping of germanane

• Nicholas D. Cultrara,
• Maxx Q. Arguilla,
• Shishi Jiang,
• Chuanchuan Sun,
• Michael R. Scudder,
• R. Dominic Ross and
• Joshua E. Goldberger

Beilstein J. Nanotechnol. 2017, 8, 1642–1648, doi:10.3762/bjnano.8.164

• -terminated graphane analogue of germanium has generated interest as a potential 2D electronic material. However, the incorporation and retention of extrinsic dopant atoms in the lattice, to tune the electronic properties, remains a significant challenge. Here, we show that the group-13 element Ga and the

• group-15 element As, can be successfully doped into a precursor CaGe2 phase, and remain intact in the lattice after the topotactic deintercalation, using HCl, to form GeH. After deintercalation, a maximum of 1.1% As and 2.3% Ga can be substituted into the germanium lattice. Electronic transport

• properties of single flakes show that incorporation of dopants leads to a reduction of resistance of more than three orders of magnitude in H2O-containing atmosphere after As doping. After doping with Ga, the reduction is more than six orders of magnitude, but with significant hysteretic behavior, indicative

3D continuum phonon model for group-IV 2D materials

• Morten Willatzen,
• Lok C. Lew Yan Voon,
• Appala Naidu Gandi and
• Udo Schwingenschlögl

Beilstein J. Nanotechnol. 2017, 8, 1345–1356, doi:10.3762/bjnano.8.136

• Morten Willatzen Lok C. Lew Yan Voon Appala Naidu Gandi Udo Schwingenschlogl Department of Photonics Engineering, Technical University of Denmark, Kgs. Lyngby, 2800, Denmark College of Science and Mathematics, The University of West Georgia, 1601 Maple St, Carrollton, GA 30117. USA PSE Division

CVD transfer-free graphene for sensing applications

• Chiara Schiattarella,
• Sten Vollebregt,
• Tiziana Polichetti,
• Brigida Alfano,
• Ettore Massera,
• Maria Lucia Miglietta,
• Girolamo Di Francia and
• Pasqualina Maria Sarro

Beilstein J. Nanotechnol. 2017, 8, 1015–1022, doi:10.3762/bjnano.8.102

• extent. Figure 3 displays the dynamic response of the conductance of the devices towards 1 ppm of NO2. As can be observed, the base conductance values are comparable (GA ≈ GB ≈ 22 µS). During exposure, both chemiresistors exhibit an identical percentage variation of the conductance without reaching a

Functional dependence of resonant harmonics on nanomechanical parameters in dynamic mode atomic force microscopy

• Federico Gramazio,
• Matteo Lorenzoni,
• Francesc Pérez-Murano,
• Enrique Rull Trinidad,
• Urs Staufer and
• Jordi Fraxedas

Beilstein J. Nanotechnol. 2017, 8, 883–891, doi:10.3762/bjnano.8.90

• also follow quite closely Equation 4, with g1 = −63.092 nN·nm−2, g2 = 42.371 nm−1 and g3 = −42.223 nN1/2·nm−3/2. Thus, the simulations provide a functional dependence of A6 on the relevant R, E, A1 and kc parameters, which can be stated as: where Gr, Ge, Ga and Gk represent the decoupled gun-shaped

3D Nanoprinting via laser-assisted electron beam induced deposition: growth kinetics, enhanced purity, and electrical resistivity

• Brett B. Lewis,
• Robert Winkler,
• Xiahan Sang,
• Pushpa R. Pudasaini,
• Michael G. Stanford,
• Harald Plank,
• Raymond R. Unocic,
• Jason D. Fowlkes and
• Philip D. Rack

Beilstein J. Nanotechnol. 2017, 8, 801–812, doi:10.3762/bjnano.8.83

• of 3D growth have been demonstrated [35][36][37][38] beyond simple 1D nanowires, controlled growth of complex geometries using EBID has only recently been achieved based on a combined simulation and computer aided design approach [11]. This approach has also been used with Ga+ ion beam induced

Recombinant DNA technology and click chemistry: a powerful combination for generating a hybrid elastin-like-statherin hydrogel to control calcium phosphate mineralization

• Mohamed Hamed Misbah,
• Mercedes Santos,
• Luis Quintanilla,
• Christina Günter,
• Matilde Alonso,
• Andreas Taubert and
• José Carlos Rodríguez-Cabello

Beilstein J. Nanotechnol. 2017, 8, 772–783, doi:10.3762/bjnano.8.80

• -2011-278557, PITN-GA-2012-317306 and MSCA-ITN-2014-642687), the MINECO of the Spanish Government (MAT2013-42473-R and MAT2013-41723-R) and the Junta de Castilla y León (VA244U13, VA313U14 and GRS/516/A/10), Spain. The Deutsche Forschungsgemeinschaft (DFG, TA571/11-1), and the University of Potsdam are

Modeling adsorption of brominated, chlorinated and mixed bromo/chloro-dibenzo-p-dioxins on C₆₀ fullerene using Nano-QSPR

• Piotr Urbaszek,
• Agnieszka Gajewicz,
• Celina Sikorska,
• Maciej Haranczyk and
• Tomasz Puzyn

Beilstein J. Nanotechnol. 2017, 8, 752–761, doi:10.3762/bjnano.8.78

• adsorption energy values (ΔEads) for 32 Br/Cl dibenzo-p-dioxin congeners adsorbed on a C60 fullerene surface and carefully selected structural descriptors, we developed a Nano-QSPR model, employing a hybrid genetic algorithm, partial least squares linear regression (GA-PLS), as the modeling method. The

• for Economic Co-operation and Development (OECD) QSAR validation recommendations [27] and fulfills all the validation criteria. The presented model has a well-defined endpoint (ΔEads - adsorption energy of a C60@PXDD complex) and well-known algorithms (GA-PLS). According to OECD guidelines, it is

• on the cross-validation results (the lowest value of the root mean square error of cross validation, RMSECV). Four latent vectors (LVs), as a set of 4, were selected by the GA descriptors: #H, TE, D_x and D_y together explained 100% of the variance (58.08% + 40.42% + 1.30% + 0.20%) of the X-block and

Synthesis of graphene–transition metal oxide hybrid nanoparticles and their application in various fields

• Arpita Jana,
• Elke Scheer and
• Sebastian Polarz

Beilstein J. Nanotechnol. 2017, 8, 688–714, doi:10.3762/bjnano.8.74

• superior electrical performance because the porous nature of the hybrid accommodates the volume change [146]. Wu et al. have use 3D N-doped graphene aerogel (GA) supported Fe3O4 NPs (Fe3O4/N-GA) as efficient cathode catalysts for ORR [147]. This Fe3O4/N-GA material shows excellent electrocatalytic activity

Ion beam profiling from the interaction with a freestanding 2D layer

• Ivan Shorubalko,
• Kyoungjun Choi,
• Michael Stiefel and
• Hyung Gyu Park

Beilstein J. Nanotechnol. 2017, 8, 682–687, doi:10.3762/bjnano.8.73

• strategy to measure FIB profiles is to exploit the milling effect of a bulk substrate by ion beams with a controlled beam dose. This method was actually used to estimate the focus spot size of one of the first Ga-FIBs [8]. In order to extract the ion beam profiles from such experiments more precisely, one

• are exposed to ion beams, and in return this dependency reflects information of the ion beam profile. We determine a Ga-FIB point spread function and verify its Gaussian profile for different beam current values. The volume under the Gaussian profile is used to extract the graphene sputtering yield in

• , freestanding graphene membranes were exposed to a Ga+ focused ion beam. The smallest beam aperture gives a beam current value of 1.5 pA. A suspended graphene layer is then exposed in a single-pixel exposure mode. Figure 1a shows a STEM bright field (BF) image of seven pores milled into graphene with different

Modeling of the growth of GaAs–AlGaAs core–shell nanowires

• Qian Zhang,
• Peter W. Voorhees and
• Stephen H. Davis

Beilstein J. Nanotechnol. 2017, 8, 506–513, doi:10.3762/bjnano.8.54

• that of Ga, Al-rich stripes are predicted to form along the {112} facets when the difference of the mobilities of Al and Ga atoms is sufficiently large on {112} facets. As the size of the shell increases, deposition becomes more important. The Al-poor dots are obtained at the apices of {112} facets, if

• nanowires? The other issue is the mechanism responsible for the segregation of Al atoms in the shells. More specifically, under certain deposition conditions, Al atoms move slower than Ga atoms along the {110} facets [6]. If the atoms move from {110} to {112} facets, then the Al atoms should be left behind

• on the {110} facets rather than accumulate in the directions. Thus, the question is how the Al-rich stripes could form along {112} facets when the atoms move from {110} facets to {112} facets and the mobility of Al is lower than that of Ga on {110} facets [6]. Following this question is that of how

Fiber optic sensors based on hybrid phenyl-silica xerogel films to detect n-hexane: determination of the isosteric enthalpy of adsorption

• Jesús C. Echeverría,
• Ignacio Calleja,
• Paula Moriones and
• Julián J. Garrido

Beilstein J. Nanotechnol. 2017, 8, 475–484, doi:10.3762/bjnano.8.51

• , Norcross, GA, USA). 100 mg of each sample were accurately weighed out in an elongated Pyrex glass tube. Before the adsorption analysis, the samples were degassed for at least 12 h at 423 K at the degassing port of the adsorption apparatus, with a residual vacuum of 0.70 Pa. The specific surface area of the

Tandem polymer solar cells: simulation and optimization through a multiscale scheme

• Fanan Wei,
• Ligang Yao,
• Fei Lan,
• Guangyong Li and
• Lianqing Liu

Beilstein J. Nanotechnol. 2017, 8, 123–133, doi:10.3762/bjnano.8.13

• algorithm (GA), a global optimal PCE value was found and the corresponding device parameters were obtained. In order to prove the viability of our proposed simulation approach, two different configurations of the tandem devices, as shown in Figure 1b, were both tested and compared with each other

• accurate optimization results are required for tandem polymer solar cells. For the purpose of relieving computational load and optimizing tandem device structures with all the structure parameters considered, we employed two searching algorithms: simplex searching [30] and GA [31]. In simplex searching

• according to the schematic and flow chart (Figure S3 and S4, in Supporting Information File 1). On the other hand, for GA searching, six samples (six points) with four traits (the four variables) were prepared. During each iteration, the best two samples were selected as the parent ones. The child samples

Obtaining and doping of InAs-QD/GaAs(001) nanostructures by ion beam sputtering

• Sergei N. Chebotarev,
• Alexander S. Pashchenko,
• Leonid S. Lunin,
• Elena N. Zhivotova,
• Georgy A. Erimeev and
• Marina L. Lunina

Beilstein J. Nanotechnol. 2017, 8, 12–20, doi:10.3762/bjnano.8.2

• occupy Ga vacancies in the course of GaAs layer growth and behave as an acceptor-type impurity partially compensating the concentration of Te+ donors. The formation of neutral SnTe complexes results in a decrease in electrically active donors Sn+ + Te+ incorporated in the GaAs layer. We consider that

Precise in situ etch depth control of multilayered III−V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment

• Ann-Kathrin Kleinschmidt,
• Lars Barzen,
• Johannes Strassner,
• Christoph Doering,
• Henning Fouckhardt,
• Wolfgang Bock,
• Michael Wahl and
• Michael Kopnarski

Beilstein J. Nanotechnol. 2016, 7, 1783–1793, doi:10.3762/bjnano.7.171

• sequence of a semiconductor laser, mainly consisting of several layers of Ga(As)Sb quantum dots (QD) (as active material) embedded in GaAs, surrounded by n- and p-doped layers of Al0.5Ga0.5As (for the diode and waveguide structure), has been grown on an n-doped GaAs substrate (called sample type B, for

• ), the active area with eight layers of Ga(As)Sb quantum dots (QD) between 50 nm thick GaAs barriers (B3), the lower n-Al0.5Ga0.5As cladding (B2) and, finally, the n-GaAs buffer and substrate (B1). The different properties of the layers during etching become particularly obvious, when taking a look at

Numerical investigation of depth profiling capabilities of helium and neon ions in ion microscopy

• Patrick Philipp,
• Lukasz Rzeznik and
• Tom Wirtz

Beilstein J. Nanotechnol. 2016, 7, 1749–1760, doi:10.3762/bjnano.7.168

• surface by disordering the surface structure and forming hydrogenated amorphous carbon [4]. Similarly, Ga+ irradiation of polydimethylsiloxane (PDMS) results in micro- and nanopatterns with controlled stiffness for potential applications in tissue engineering [5]. Overall, the properties depend on the

Thickness-modulated tungsten–carbon superconducting nanostructures grown by focused ion beam induced deposition for vortex pinning up to high magnetic fields

• Ismael García Serrano,
• Javier Sesé,
• Isabel Guillamón,
• Hermann Suderow,
• Sebastián Vieira,
• Manuel Ricardo Ibarra and
• José María De Teresa

Beilstein J. Nanotechnol. 2016, 7, 1698–1708, doi:10.3762/bjnano.7.162

• in the present work from 60 to 140 nm, which allows us to determine the effect of its commensurability with the intervortex distance. The W–C deposits have been grown by FIBID inside commercial Helios 650 dual-beam equipment from FEI, which includes a Ga+ FIB column. The equipment includes a gas

• -injection system for the W(CO)6 precursor. The precursor gas is spread locally onto the substrate, where it becomes dissociated by the FIB. The composition of flat deposits has been previously studied with X-ray photoelectron spectroscopy [13], giving as a result (in atom %), W (40%), C (43%), Ga (10%) and

• the nature of the growth by FIBID. In the regions directly scanned by the ion beam during growth, a higher amount of Ga ions is expected compared to the regions not directly scanned by the ion beam, where only scattered Ga ions from nearby regions are present. Quantitative analysis of the composition

Viability and proliferation of endothelial cells upon exposure to GaN nanoparticles

• Tudor Braniste,
• Ion Tiginyanu,
• Tibor Horvath,
• Simion Raevschi,
• Serghei Cebotari,
• Marco Lux,
• Axel Haverich and
• Andres Hilfiker

Beilstein J. Nanotechnol. 2016, 7, 1330–1337, doi:10.3762/bjnano.7.124

• epitaxy (HVPE) in two stages, as previously described [29]. Metallic gallium, ammonia (NH3) gas, hydrogen chloride (HCl) gas, and hydrogen (H2) were used as source materials and carrier gases. In the source zone, GaCl was formed as a result of chemical reactions between gaseous HCl and liquid Ga. GaCl and

Experimental and simulation-based investigation of He, Ne and Ar irradiation of polymers for ion microscopy

• Lukasz Rzeznik,
• Yves Fleming,
• Tom Wirtz and
• Patrick Philipp

Beilstein J. Nanotechnol. 2016, 7, 1113–1128, doi:10.3762/bjnano.7.104

• HIM has been developed for high resolution electron microscopy and nanofabrication using the He+ or Ne+-emitting atomic level ion source (ALIS) [4]. Compared to cluster ion bombardment, the use of monoatomic primary ion species (such as Cs+, O−, Ga+) for imaging in SIMS allows significantly higher

Voltammetric determination of polyphenolic content in pomegranate juice using a poly(gallic acid)/multiwalled carbon nanotube modified electrode

• Refat Abdel-Hamid and
• Emad F. Newair

Beilstein J. Nanotechnol. 2016, 7, 1104–1112, doi:10.3762/bjnano.7.103

• chronocoulometry. It was found that gallic acid (GA) exhibits a superior electrochemical response on the PGA/MWCNT/GCE sensor in comparison with bare GCE. The results reveal that a PGA/MWCNT/GCE sensor can remarkably enhance the electro-oxidation signal of GA as well as shift the peak potentials towards less

• positive potential values. The dependence of peak current on accumulation potential, accumulation time and pH were investigated by square-wave voltammetry (SWV) to optimize the experimental conditions for the determination of GA. Using the optimized conditions, the sensor responded linearly to a GA

• phenolic content; Introduction Gallic acid (GA) is a natural polyphenolic compound found in fruits, vegetables and several other plants [1]. The study of the role of GA in providing better therapeutic outcomes against arsenic-induced toxicity showed that GA is effective against arsenic-induced oxidative

Magnetic switching of nanoscale antidot lattices

• Ulf Wiedwald,
• Joachim Gräfe,
• Kristof M. Lebecki,
• Maxim Skripnik,
• Felix Haering,
• Gisela Schütz,
• Paul Ziemann,
• Eberhard Goering and
• Ulrich Nowak

Beilstein J. Nanotechnol. 2016, 7, 733–750, doi:10.3762/bjnano.7.65

• the net current direction. The approximately 60 nm wide and 20 µm long FIB cuttings were performed using Ga+ ions with a current of 10 nA for a exposure time of 9 minutes, each. Figure 7b and Figur 7c show the resulting FIB channels with the current applied (b) along the nn-direction and (c) along the

Rigid multipodal platforms for metal surfaces

• Michal Valášek,
• Marcin Lindner and
• Marcel Mayor

Beilstein J. Nanotechnol. 2016, 7, 374–405, doi:10.3762/bjnano.7.34

Simultaneous cancer control and diagnosis with magnetic nanohybrid materials

• Reza Saadat and
• Franz Renz

Beilstein J. Nanotechnol. 2016, 7, 121–125, doi:10.3762/bjnano.7.14

• detect cancer tissue with radiopharmaceuticals. By substitution of the Ga isotope with an alpha emitter the same compound could be used for cancer treatment. Furthermore the nanoparticles were connected to pH-sensitive complexes, enabling a pH-controlled assembly/disassembly and therefore the spreading

• phosphonate containing chelate ligand and injected into the body. The tracer enriches in the hydroxyapatite (Ca10(PO4)6(OH)2) and can be used for investigations of the bone metabolism [10][11][12]. Modifications of the functional groups of the ligand enables the use of the Ga complex in a different way: PET

• -analogue Ga-DOTA (DOTA = 1,4,7,10-tetraazacyclododecane-1,4,7,10-tetraacetic acid) complexes were synthesized and linked to Fe3O4 MNP. In this manner it is possible to transport the PET tracer with an external magnetic field right to the target location. The functionalized MNP are linked to each other via

Dependence of lattice strain relaxation, absorbance, and sheet resistance on thickness in textured ZnO@B transparent conductive oxide for thin-film solar cell applications

• Kuang-Yang Kou,
• Yu-En Huang,
• Chien-Hsun Chen and
• Shih-Wei Feng

Beilstein J. Nanotechnol. 2016, 7, 75–80, doi:10.3762/bjnano.7.9

• , doping impurities, such as B, Al, and Ga, can improve the electrical transport properties of ZnO [18]. There are two benefits to using a B-doped ZnO (ZnO@B) film as the TCO layer. First, B has the smallest ionic radius among the three dopants (B3+: 0.23Å, Al3+: 0.54 Å, Ga3+: 0.62 Å,), which results in

A single-source precursor route to anisotropic halogen-doped zinc oxide particles as a promising candidate for new transparent conducting oxide materials

• Daniela Lehr,
• Markus R. Wagner,
• Johanna Flock,
• Julian S. Reparaz,
• Clivia M. Sotomayor Torres,
• Alexander Klaiber,
• Thomas Dekorsy and
• Sebastian Polarz

Beilstein J. Nanotechnol. 2015, 6, 2161–2172, doi:10.3762/bjnano.6.222

• with typical shallow donor bound excitons in the neutral charge state and is found very close to the well-known position of the shallow Ga donor D0X I8 or Al D0X I6 [73]. In addition an emission line at 3.333 eV is visible in the spectra of ZnO1−xClx with x = 2.5%. This transition, which is labeled Y0

High I_on/I_off current ratio graphene field effect transistor: the role of line defect

• Mohammad Hadi Tajarrod and
• Hassan Rasooli Saghai

Beilstein J. Nanotechnol. 2015, 6, 2062–2068, doi:10.3762/bjnano.6.210

• . Accordingly, the transmission probability of carriers through the device can be written as: where is the coupling between source (drain) contact and the device region; represents the retarded (advanced) Green's function for the device region, which follows the relationship of Ga = [Gr]†, with gs/d being