Sub-wavelength waveguide properties of 1D and surface-functionalized SnO₂ nanostructures of various morphologies

• Venkataramana Bonu,
• Binaya Kumar Sahu,
• Arindam Das,
• Sankarakumar Amirthapandian,
• Sandip Dhara and
• Harish C. Barshilia

Beilstein J. Nanotechnol. 2019, 10, 379–388, doi:10.3762/bjnano.10.37

• of SnO2 QDs was discussed in our earlier report [18]. In the case of VLS growth, a mixture of SnO2 QDs of diameter 2.4 nm and graphite powder (Alfa Aesar, 99.9995%) in a 3:1 weight ratio was placed in a high purity Al2O3 (99.99 %) boat. Au-coated Si (100) was used as the substrate. A Au film of 3 nm

• thickness was coated on the Si (100) substrate by using the thermal evaporation (Hind Vacuum, India) technique under a base pressure of 5.0 × 10−6 mbar. The Si substrate coated with the Au film, used as a catalyst in the growth of SnO2 NWs, was placed 10 mm away from the precursor material in the Al2O3 boat

Size limits of magnetic-domain engineering in continuous in-plane exchange-bias prototype films

• Alexander Gaul,
• Daniel Emmrich,
• Timo Ueltzhöffer,
• Henning Huckfeldt,
• Hatice Doğanay,
• Johanna Hackl,
• Muhammad Imtiaz Khan,
• Daniel M. Gottlob,
• Gregor Hartmann,
• André Beyer,
• Dennis Holzinger,
• Slavomír Nemšák,
• Claus M. Schneider,
• Armin Gölzhäuser,
• Günter Reiss and
• Arno Ehresmann

Beilstein J. Nanotechnol. 2018, 9, 2968–2979, doi:10.3762/bjnano.9.276

• prototypical in-plane EB layer system Ir17Mn83 (30 nm)/Co70Fe30 (10 nm) was grown by RF sputtering at a power of 160 W and an argon gas flux of 155 sccm on a naturally oxidized 5 nm × 5 nm Si(100) wafer, with Cu (5 nm) buffer and Ta (10 nm) capping. EB at the interface between the antiferromagnetic (AF) and

Investigation of CVD graphene as-grown on Cu foil using simultaneous scanning tunneling/atomic force microscopy

• Majid Fazeli Jadidi,
• Umut Kamber,
• Oğuzhan Gürlü and
• H. Özgür Özer

Beilstein J. Nanotechnol. 2018, 9, 2953–2959, doi:10.3762/bjnano.9.274

• insight on relative contrast mechanisms in STM and AFM, on a graphene surface. In the past, we used this small-amplitude STM/AFM technique in order to investigate surfaces such as Si(100) [28], Cu(100) [29], Si(111) [30], and more recently Si(111) again, with an improved force resolution [31

• interactions with a larger range. When we compare the range of interactions in the tunnel current and force measurements, we see a different situation to that reported on other surfaces in previous studies. Based on previous works on semiconductors such as Si(111) and Si(100), the onset of tunnel current is

Magnetic properties of Fe₃O₄ antidot arrays synthesized by AFIR: atomic layer deposition, focused ion beam and thermal reduction

• Juan L. Palma,
• Alejandro Pereira,
• Raquel Álvaro,
• José Miguel García-Martín and
• Juan Escrig

Beilstein J. Nanotechnol. 2018, 9, 1728–1734, doi:10.3762/bjnano.9.164

• material, such new Fe3O4 antidot arrays are of interest for the future development of nano-scale biosensors. Experimental Figure 1 shows the outline of the AFIR process. Si(100) wafers with a native layer of SiO2 were coated with hematite (Fe2O3) in a Savannah S100 ALD reactor from Ultratech operated at

• to manufacture square and hexagonal antidot arrays of magnetic oxides among other geometries, and with variable lattice parameters. Outline of the AFIR process. Si(100) wafers with a native layer of SiO2 were coated with Fe2O3. Antidot arrays were directly etched in the continuous films of Fe2O3

Friction force microscopy of tribochemistry and interfacial ageing for the SiO_x/Si/Au system

• Christiane Petzold,
• Marcus Koch and
• Roland Bennewitz

Beilstein J. Nanotechnol. 2018, 9, 1647–1658, doi:10.3762/bjnano.9.157

• Christiane Petzold Marcus Koch Roland Bennewitz INM – Leibniz Institute for New Materials, Campus D2 2, 66123 Saarbrücken, Germany 10.3762/bjnano.9.157 Abstract Friction force microscopy was performed with oxidized or gold-coated silicon tips sliding on Au(111) or oxidized Si(100) surfaces in

• was observed for oxidized silicon tips sliding on Au(111) or on oxidized Si(100) surfaces. We therefore deliberately increased the adhesive forces between probes and surfaces. In an attempt to allow for the successive formation of chemical bonds in contact ageing experiments, we removed passivating

• cantilevers before use. A Au(111) single crystal (MaTeck GmbH, Jülich, Germany) was prepared by repeating a sputter–heating cycle (20 min Ar sputtering at 25 μA/1 keV followed by 1 h annealing at 850 °C) until a sharp (111) pattern was observed by low-energy electron diffraction (LEED). The n-Si(100) sample

Field-controlled ultrafast magnetization dynamics in two-dimensional nanoscale ferromagnetic antidot arrays

• Anulekha De,
• Sucheta Mondal,
• Sourav Sahoo,
• Saswati Barman,
• Yoshichika Otani,
• Rajib Kumar Mitra and
• Anjan Barman

Beilstein J. Nanotechnol. 2018, 9, 1123–1134, doi:10.3762/bjnano.9.104

• -dimensional arrays of Py antidots with triangular holes arranged in a hexagonal lattice have been fabricated by a combination of electron-beam lithography, electron-beam evaporation and ion milling. The 20 nm-thick Py film was deposited on a commercially available self-oxidized Si(100) substrate and a 60-nm

Comparative study of sculptured metallic thin films deposited by oblique angle deposition at different temperatures

• Susann Liedtke,
• Christoph Grüner,
• Jürgen W. Gerlach and
• Bernd Rauschenbach

Beilstein J. Nanotechnol. 2018, 9, 954–962, doi:10.3762/bjnano.9.89

• maxima, revealing a polycrystalline fiber-texture contribution. The four sharp peaks in Figure 2e and 2g, respectively, originate from the Si(100) substrate. The presence of an 800 nm thick oxide layer on the substrate prohibits an epitaxial relationship between the columns and the substrate. In summary

Electron interactions with the heteronuclear carbonyl precursor H₂FeRu₃(CO)₁₃ and comparison with HFeCo₃(CO)₁₂: from fundamental gas phase and surface science studies to focused electron beam induced deposition

• Ragesh Kumar T P,
• Paul Weirich,
• Lukas Hrachowina,
• Marc Hanefeld,
• Ragnar Bjornsson,
• Helgi Rafn Hrodmarsson,
• Sven Barth,
• D. Howard Fairbrother,
• Michael Huth and
• Oddur Ingólfsson

Beilstein J. Nanotechnol. 2018, 9, 555–579, doi:10.3762/bjnano.9.53

Design of polar self-assembling lactic acid derivatives possessing submicrometre helical pitch

• Alexej Bubnov,
• Cyril Vacek,
• Michał Czerwiński,
• Terezia Vojtylová,
• Wiktor Piecek and
• Věra Hamplová

Beilstein J. Nanotechnol. 2018, 9, 333–341, doi:10.3762/bjnano.9.33

• checked by HPLC analysis (high-pressure pump ECOM Alpha; column WATREX Biospher Si 100, 250 × 4 mm, 5 µm; detector WATREX UVD 250) and were found to be >99.8% with the mixture of 99.9% of toluene and 0.1% of methanol as an eluent using a UV–vis detector (λ = 290 nm). The optical rotation was measured in

Dielectric properties of a bisimidazolium salt with dodecyl sulfate anion doped with carbon nanotubes

• Doina Manaila Maximean,
• Viorel Cîrcu and
• Constantin Paul Ganea

Beilstein J. Nanotechnol. 2018, 9, 164–174, doi:10.3762/bjnano.9.19

• Si(100) plate, heated to the isotropic state and then cooled down to room temperature prior to data acquisition Dielectric spectroscopy The dielectric spectroscopy measurements were performed using a broadband dielectric spectrometer, NOVOCONTROL, with an Alpha-A high-performance frequency analyzer

Atomic layer deposition and properties of ZrO₂/Fe₂O₃ thin films

• Kristjan Kalam,
• Helina Seemen,
• Peeter Ritslaid,
• Mihkel Rähn,
• Aile Tamm,
• Kaupo Kukli,
• Aarne Kasikov,
• Joosep Link,
• Raivo Stern,
• Salvador Dueñas,
• Helena Castán and
• Héctor García

Beilstein J. Nanotechnol. 2018, 9, 119–128, doi:10.3762/bjnano.9.14

• terms of the chemical composition. Altogether, 220–235 ALD cycles were deposited to obtain each thin film. The films were grown on various substrates: Si(100) and highly doped conductive Si substrates covered by a 10 nm TiN film grown by chemical vapor deposition. Before deposition, the Si(100) was

• rinsed in a mixture of H2SO4/H2O2 5:2 and heated on a hot plate at 80 °C. After that, the Si(100) was cleaned with distilled water in an ultrasound container. The next step was to clean the samples with a 7% solution of HF and again clean with distilled water under ultrasound. During the time after

• cleaning and before placing the samples in a reactor, a SiO2 layer of a few nanometers thick grew on the sample because of contact with surrounding air. Selected samples on Si(100) were annealed at 850 °C and 1000 °C in air for 15 and 10 minutes, respectively. For electrical measurements, the films

Localized growth of carbon nanotubes via lithographic fabrication of metallic deposits

• Fan Tu,
• Martin Drost,
• Imre Szenti,
• Janos Kiss,
• Zoltan Kónya and
• Hubertus Marbach

Beilstein J. Nanotechnol. 2017, 8, 2592–2605, doi:10.3762/bjnano.8.260

• localized fabrication of CNTs at FEBIP deposits works with our approach as proposed. Figure 1 depicts the result of an exploratory experiment to locally synthesize CNTs via CVD on SiOx/Si(100) using Fe-containing deposits (Figure 1b) as CVD catalysts. The latter were fabricated via EBID (1.2 nC/point) and

• ], nanoscale actuators [38], and on-chip coolers [5]. A CNT forest is defined as CNTs grown with high density and vertical alignment. Therefore, it is necessary to increase the number of the CNTs grown per surface area. Corresponding attempts on the native oxide surface on Si(100) used for the results

• corresponding CVD experiment was carried out at 1073 K, at which no CNT growth was observed on the SiOx/Si(100) substrate with identically fabricated Fe squares. The detailed images in Figure 6 illustrate two clear trends: an increased CNT yield with increasing square size (right column) and an increasing yield

Growth and characterization of textured well-faceted ZnO on planar Si(100), planar Si(111), and textured Si(100) substrates for solar cell applications

• Chin-Yi Tsai,
• Jyong-Di Lai,
• Shih-Wei Feng,
• Chien-Jung Huang,
• Chien-Hsun Chen,
• Fann-Wei Yang,
• Hsiang-Chen Wang and
• Li-Wei Tu

Beilstein J. Nanotechnol. 2017, 8, 1939–1945, doi:10.3762/bjnano.8.194

• and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, Taiwan, R.O.C 10.3762/bjnano.8.194 Abstract In this work, textured, well-faceted ZnO materials grown on planar Si(100), planar Si(111), and textured Si(100) substrates by low-pressure chemical vapor deposition

• (LPCVD) were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and cathode luminescence (CL) measurements. The results show that ZnO grown on planar Si(100), planar Si(111), and textured Si(100) substrates favor the growth of ZnO(110) ridge-like, ZnO

• (002) pyramid-like, and ZnO(101) pyramidal-tip structures, respectively. This could be attributed to the constraints of the lattice mismatch between the ZnO and Si unit cells. The average grain size of ZnO on the planar Si(100) substrate is slightly larger than that on the planar Si(111) substrate

(Metallo)porphyrins for potential materials science applications

• Lars Smykalla,
• Carola Mende,
• Michael Fronk,
• Pablo F. Siles,
• Michael Hietschold,
• Georgeta Salvan,
• Dietrich R. T. Zahn,
• Oliver G. Schmidt,
• Tobias Rüffer and
• Heinrich Lang

Beilstein J. Nanotechnol. 2017, 8, 1786–1800, doi:10.3762/bjnano.8.180

• rate 5 Å/min, temperature 325 °C) on a 30 nm thick nickel bottom electrode on top of a Si(100)/SiO2 wafer (Figure 2). Here, Ni substrates were selected for the growth of CuTPP(OMe)4 in order to investigate a system that may possess valuable possibilities for future device applications, in which the

Triptycene-terminated thiolate and selenolate monolayers on Au(111)

• Jinxuan Liu,
• Martin Kind,
• Björn Schüpbach,
• Daniel Käfer,
• Stefanie Winkler,
• Wenhua Zhang,
• Andreas Terfort and
• Christof Wöll

Beilstein J. Nanotechnol. 2017, 8, 892–905, doi:10.3762/bjnano.8.91

• Supporting Information File 1). Substrates with Au(111) surfaces For the investigation of the SAMs with infrared spectroscopy and electron spectroscopy, single-crystalline Si(100) wafer (Wacker) pieces with evaporated gold layers were used as substrates. Metal deposition was carried out using a commercial

Synthesis of coaxial nanotubes of polyaniline and poly(hydroxyethyl methacrylate) by oxidative/initiated chemical vapor deposition

• Alper Balkan,
• Efe Armagan and
• Gozde Ozaydin Ince

Beilstein J. Nanotechnol. 2017, 8, 872–882, doi:10.3762/bjnano.8.89

• pentachloride (99%, Sigma Aldrich) (SbCl5) were used as received. Aniline was heated in a metal jar up to 60 °C while SbCl5 was kept at room temperature in a glass jar. Both chemicals were delivered to the system in vapor phase through different ports facing the substrate surface. Glass slides, Si(100) wafers

• originating from the Si(100) planes. Each measurement took 4 h for an adequate signal-to-noise ratio. Thickness of the films on Si wafer and glass substrates was measured with a spectroscopic ellipsometer (M-2000, J. A. Woollam) at 65, 70, and 75° within a range of 300–800 nm. For electrical characterization

Impact of air exposure and annealing on the chemical and electronic properties of the surface of SnO₂ nanolayers deposited by rheotaxial growth and vacuum oxidation

• Monika Kwoka and
• Maciej Krzywiecki

Beilstein J. Nanotechnol. 2017, 8, 514–521, doi:10.3762/bjnano.8.55

• controlled) were deposited under UHV conditions (system base pressure: 3·10−9 mbar) by thermal evaporation of Sn pellets (KJLC®) from a resistively heated source on Si(100) substrates (Bosch GmbH, n-type, P-doped, 5–10 Ω·cm) maintained at a temperature of 265 °C at an oxygen partial pressure of 10−4 mbar for

Role of oxygen in wetting of copper nanoparticles on silicon surfaces at elevated temperature

• Tapas Ghosh and
• Biswarup Satpati

Beilstein J. Nanotechnol. 2017, 8, 425–433, doi:10.3762/bjnano.8.45

• oxidation of Cu nanoparticles deposited by the galvanic displacement reaction on silicon surfaces at various ambient conditions. Experimental Copper nanoparticles have been deposited on Si(100) substrates by an easy, one-step galvanic displacement reaction. 5 mL of 10 mM CuSO4 (Merck, >99%) solution was

• discs each of 3 mm diameter were cut from the Si(100) substrate and mechanically thinned to 100 μm, then dimpled and polished to achieve a thickness of approximately 30 μm. Finally, Ar-ion milling was performed to make them electron transparent. The Cu nanoparticles, after these procedures deposited by

Template-controlled piezoactivity of ZnO thin films grown via a bioinspired approach

• Nina J. Blumenstein,
• Fabian Streb,
• Stefan Walheim,
• Thomas Schimmel,
• Zaklina Burghard and
• Joachim Bill

Beilstein J. Nanotechnol. 2017, 8, 296–303, doi:10.3762/bjnano.8.32

• pm V−1 to 6.4 pm V−1. This leads to responses comparable to ZnO structures till now only obtained by RF magnetron sputtering [14] or after high temperature treatment (e.g., at 500 °C) [15]. Experimental Template preparation Boron-doped Si (100) wafers were cleaned first in Milli-Q water and then in

Colorimetric gas detection by the varying thickness of a thin film of ultrasmall PTSA-coated TiO₂ nanoparticles on a Si substrate

• Urmas Joost,
• Andris Šutka,
• Meeri Visnapuu,
• Aile Tamm,
• Meeri Lembinen,
• Mikk Antsov,
• Kathriin Utt,
• Krisjanis Smits,
• Ergo Nõmmiste and
• Vambola Kisand

Beilstein J. Nanotechnol. 2017, 8, 229–236, doi:10.3762/bjnano.8.25

• % after washing. Thin films based on TiO2 nanoparticles were prepared from the NP colloidal solution (5.9% by mass in ethanol) by spin coating on Si(100) substrates in ambient atmosphere. The substrates were cleaned prior to coating with ethanol to remove small dust particles. The rotation frequency

Influence of hydrofluoric acid treatment on electroless deposition of Au clusters

• Rachela G. Milazzo,
• Antonio M. Mio,
• Giuseppe D’Arrigo,
• Emanuele Smecca,
• Alessandra Alberti,
• Gabriele Fisichella,
• Filippo Giannazzo,
• Corrado Spinella and
• Emanuele Rimini

Beilstein J. Nanotechnol. 2017, 8, 183–189, doi:10.3762/bjnano.8.19

• , we found that metal nanoparticles nucleate instantaneously and their subsequent growth is governed by diffusion in the solution [23]. In detail, we showed that by immersion of a Si(100) substrate for a few seconds in a solution containing 1 mM KAuCl4 and 4.8 M HF, AuNPs with a mean radius of less

• were mechanically thinned and gently milled for TEM observations. HF treatment before Au deposition The Si(100) substrates were cleaned following the procedure described in the experimental section. Some of them were subsequently immersed in DHF (diluted HF, 6% HF) for 10 s and some others for 240 s

• silicon. The SAED and the XRD measurements showed a pronounced heteroepitaxial component but also a polycrystalline phase for Au on Si(100) obtained by galvanic displacement. The layered gold regions could be altered by means of postdeposition HF treatments. TEM observations and XRD analysis showed that

Nanostructured germanium deposited on heated substrates with enhanced photoelectric properties

• Ionel Stavarache,
• Valentin Adrian Maraloiu,
• Petronela Prepelita and
• Gheorghe Iordache

Beilstein J. Nanotechnol. 2016, 7, 1492–1500, doi:10.3762/bjnano.7.142

• Nanosystems, Gamma 1000, sputtering equipment. Clean 1 cm2 substrates of n-type Si(100) with a resistivity of 10–20 Ω·cm were used and they were firstly degassed for 5 min at 200 °C in vacuum. To obtain the desired Ge/SiO2 (50:50) concentration ratio on the Si substrate at a base pressure of 1 × 10−7 Torr

Au nanoparticle-based sensor for apomorphine detection in plasma

• Chiara Zanchi,
• Andrea Lucotti,
• Matteo Tommasini,
• Sebastiano Trusso,
• Ugo de Grazia,
• Emilio Ciusani and
• Paolo M. Ossi

Beilstein J. Nanotechnol. 2015, 6, 2224–2232, doi:10.3762/bjnano.6.228

• nm, pulse width 25 ns, repetition rate 10 Hz) was focused onto a pure gold target (99.99%) mounted on a rotating holder. The substrates were deposited on pieces of Corning Glass 5049, or Si(100), placed at a distance of 35 mm from the target and held at room temperature. The target holder was rotated

Nanostructuring of GeTiO amorphous films by pulsed laser irradiation

• Valentin S. Teodorescu,
• Cornel Ghica,
• Adrian V. Maraloiu,
• Mihai Vlaicu,
• Andrei Kuncser,
• Magdalena L. Ciurea,
• Ionel Stavarache,
• Ana M. Lepadatu,
• Nicu D. Scarisoreanu,
• Andreea Andrei,
• Valentin Ion and
• Maria Dinescu

Beilstein J. Nanotechnol. 2015, 6, 893–900, doi:10.3762/bjnano.6.92

• GeTiO matrix. Experimental Amorphous GeTiO films with a thickness of 330 nm were deposited by RF magnetron sputtering on Si(100) wafer substrates using Ge:TiO2 with 50:50 atomic ratio. Details on the film deposition are found in [23]. These GeTiO amorphous films were irradiated with laser fluences from

Structure and mechanism of the formation of core–shell nanoparticles obtained through a one-step gas-phase synthesis by electron beam evaporation

• Andrey V. Nomoev,
• Sergey P. Bardakhanov,
• Makoto Schreiber,
• Dashima G. Bazarova,
• Nikolai A. Romanov,
• Boris B. Baldanov,
• Bair R. Radnaev and
• Viacheslav V. Syzrantsev

Beilstein J. Nanotechnol. 2015, 6, 874–880, doi:10.3762/bjnano.6.89

• of core–shell structures. As the vapour pressure of Ag (100 kPa at 2433 K [19]) is higher than that of Si (100 kPa at 3537 K [19]), at higher beam currents, the Si:Ag vapour ratio would decrease. Only at the beam current of 4 mA was the Si content in the vapour sufficient to create the core–shell