A scanning probe microscope for magnetoresistive cantilevers utilizing a nested scanner design for large-area scans

• Tobias Meier,
• Alexander Förste,
• Ali Tavassolizadeh,
• Karsten Rott,
• Dirk Meyners,
• Roland Gröger,
• Günter Reiss,
• Eckhard Quandt,
• Thomas Schimmel and
• Hendrik Hölscher

Beilstein J. Nanotechnol. 2015, 6, 451–461, doi:10.3762/bjnano.6.46

• exchange bias [55]. The TMR stack is grown by sputtering techniques on a 4'' Si(100) wafer substrate with 300 ± 2 μm thickness (Si-Mat Silicon Materials, Germany) with thermally grown 2 μm-thick and 100 nm-thick SiO2 layers on the rear and front side, respectively. The TMR sensor AFM cantilevers are

Boosting the local anodic oxidation of silicon through carbon nanofiber atomic force microscopy probes

• Gemma Rius,
• Matteo Lorenzoni,
• Soichiro Matsui,
• Masaki Tanemura and
• Francesc Perez-Murano

Beilstein J. Nanotechnol. 2015, 6, 215–222, doi:10.3762/bjnano.6.20

• captured and subtracted. All tests are performed at room conditions, with a temperature of 25 °C and under a controlled relative humidity ranging from 20 to 40%. The Si substrates consist of chips cut from Si(100) wafers. Organic contamination on the chips was removed by oxygen plasma etching before the

In situ metalation of free base phthalocyanine covalently bonded to silicon surfaces

• Fabio Lupo,
• Cristina Tudisco,
• Federico Bertani,
• Enrico Dalcanale and
• Guglielmo G. Condorelli

Beilstein J. Nanotechnol. 2014, 5, 2222–2229, doi:10.3762/bjnano.5.231

• 17/A, 43124 Parma, Italy 10.3762/bjnano.5.231 Abstract Free 4-undecenoxyphthalocyanine molecules were covalently bonded to Si(100) and porous silicon through thermic hydrosilylation of the terminal double bonds of the undecenyl chains. The success of the anchoring strategy on both surfaces was

• synthesized to allow for a silicon grafting by functionalization with four undecenyl chains each having a terminal double bond. Phthalocyanine covalent anchoring was performed through thermic hydrosilylation on flat Si(100) and on porous silicon (Si-1-Pc and PSi-1-Pc, respectively). The success of the

• flat Si(100) and porous Si was performed through thermally activated hydrosilylation and the functionalized samples (Si-1-Pc and PSi-1-Pc, respectively) were characterized through XPS. In addition, further experiments were performed to demonstrate that the surface anchoring is not due to physisorption

Electron-beam induced deposition and autocatalytic decomposition of Co(CO)₃NO

• Florian Vollnhals,
• Martin Drost,
• Fan Tu,
• Esther Carrasco,
• Andreas Späth,
• Rainer H. Fink,
• Hans-Peter Steinrück and
• Hubertus Marbach

Beilstein J. Nanotechnol. 2014, 5, 1175–1185, doi:10.3762/bjnano.5.129

• bilayer and even multilayer nanostructures. Results and Discussion EBID plus autocatalytic growth EBID structures were deposited from Co(CO)3NO on native SiOx on Si(100) and 100 nm Si3N4 membranes, and on commercially available, thermal 300 nm SiO2 on Si(100). The beam energy was 15 keV at a beam current

• subsequently exposed to Co(CO)3NO. The investigated surfaces were SiOx layers on Si(100) and Si3N4, both of which are suitable substrates for EBISA using Fe(CO)5 [7][16]. On these surfaces, electron stimulated desorption of oxygen and the thereby created oxygen vacancies were identified as the active sites for

• comparable structures on SiOx/Si(100) (not shown); note that severe charging prevents Auger electron spectroscopy on the Si3N4 membrane samples. Figure 7 shows the optical density (left vertical axis) at the Co L3 edge and average apparent Co thickness dA (right vertical axis) of CoOxNyCz layers grown on

Organic and inorganic–organic thin film structures by molecular layer deposition: A review

• Pia Sundberg and
• Maarit Karppinen

Beilstein J. Nanotechnol. 2014, 5, 1104–1136, doi:10.3762/bjnano.5.123

• precursor exposure lengths, although some ammonium chloride salt formation was observed. The highest GPC values for nylon 66 were 13.1 Å per cycle when deposited at 60 °C on pretreated Si(100) [8] and up to 19 Å per cycle on KBr substrates at the deposition temperature of 83 °C [50]. The latter value is

• -diamine and terephthaloyl dichloride to grow semi-aromatic polyamide thin films. The highest achieved growth rate of this type of polyamide on Si(100) substrates was only 2 Å per cycle at 85 °C. The near-edge X-ray absorption fine structure spectroscopy measurements showed that the oligomer units of the

• was 4.9 Å per cycle on Si(100) and soda lime glass substrates at 160 °C. Yoshida et al. [63][64] employed Au-coated Si substrates, modified with 4-aminothiophenol to obtain NH2-group terminated surfaces. They conducted the experiments at 170 °C, achieving a GPC value of 2.0 Å per cycle. As the

Scale effects of nanomechanical properties and deformation behavior of Au nanoparticle and thin film using depth sensing nanoindentation

• Dave Maharaj and
• Bharat Bhushan

Beilstein J. Nanotechnol. 2014, 5, 822–836, doi:10.3762/bjnano.5.94

• deformation. This results in greater resistance to deformation and increased yield stress [28][36][37]. Experimental Materials and sample preparation Si(100) wafers with a native oxide layer (University Wafers, Boston, MA) were ultrasonically cleaned in deionized (DI) water, followed by isopropyl alcohol (IPA

• ) image (S-4300 SEM, Hitachi HTA Inc., Pleasanton, CA) of the nanoparticles. For the nanoparticle experiments conducted, several droplets of Au nanoparticles suspended in DI water were deposited onto the clean Si(100) substrates by using a syringe. A solution concentration of 0.01 mg/mL was used. The

• substrate was then placed on a hot plate and heated to a temperature of about 70–80 °C and left until the water was evaporated. For thin film experiments, a polycrystalline Au film of approximately 100 nm thickness was deposited onto the surface of the Si(100) substrate by thermal evaporation at an

3D-nanoarchitectured Pd/Ni catalysts prepared by atomic layer deposition for the electrooxidation of formic acid

• Loïc Assaud,
• Evans Monyoncho,
• Kristina Pitzschel,
• Anis Allagui,
• Matthieu Petit,
• Margrit Hanbücken,
• Elena A. Baranova and
• Lionel Santinacci

Beilstein J. Nanotechnol. 2014, 5, 162–172, doi:10.3762/bjnano.5.16

• . A typical AAO template is shown in Figure 14. The Pd/Ni catalysts have been prepared by ALD in a Fiji 200 reactor from Ultratech/Cambridge Nanotech. The catalysts (Ni and Pd) were deposited both on AAO membranes and on flat Si(100) wafers that were cleaned beforehand by sonication in acetone

• /Ni catalysts have been deposited both on 3D alumina templates and flat Si(100) wafers in order to facilitate the chemical and structural characterizations. In situ monitoring of the relative mass gain and loss was performed by using a quartz crystal microbalance (QCM from Inficon). The QCM is

Structural development and energy dissipation in simulated silicon apices

• Samuel Paul Jarvis,
• Lev Kantorovich and
• Philip Moriarty

Beilstein J. Nanotechnol. 2013, 4, 941–948, doi:10.3762/bjnano.4.106

• artefact caused by mechanical coupling between the sensor and the piezo actuator [38]. In the current study we use the Si(100)-c(4×2) surface as a prototypical system, chosen because of its known dissipative behaviour in NCAFM experiments [8][13][37][39]. In particular, we have previously shown that a

• large variety of tip types are possible on the Si(100) surface, each demonstrating a different tip–sample interaction, and importantly, each exhibiting markedly different levels of measured dissipation [40]. Here we examine the effect that simple rotations of the simulated cluster can have on the tip

• structure was considered relaxed when forces on atoms fell below 0.01 eV/Å. To obtain calculated F(z) curves the silicon tip clusters were placed at an initial vertical position of 8 Å above the Si(100) surface upper dimer atom. The vertical distance, z, is defined as the distance between the surface upper

In situ growth optimization in focused electron-beam induced deposition

• Paul M. Weirich,
• Marcel Winhold,
• Christian H. Schwalb and
• Michael Huth

Beilstein J. Nanotechnol. 2013, 4, 919–926, doi:10.3762/bjnano.4.103

• material n-doped Si(100) (350 μm)/LPCVD Si3N4 (300 nm) was used, which was equipped with 10/200 nm thick Cr/Au contacts with a separation of 3 μm that were prepared by using UV-lithography and a lift-off process. The optimization process by using the GA in combination with in situ electrical conductance

Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement

• Cathy Bugot,
• Nathanaëlle Schneider,
• Daniel Lincot and
• Frédérique Donsanti

Beilstein J. Nanotechnol. 2013, 4, 750–757, doi:10.3762/bjnano.4.85

• suitability as Cd-free buffer layer for thin film solar cells. Experimental In2S3 and In2(S,O)3 thin films were deposited on borosilicate glass and Si(100) substrates in a SUNALE R-200 ALD reactor (Picosun Oy.) with a modified 15 cm × 15 cm square reaction chamber. All samples were deposited performing a

• detector INCASynergy 350. All EDX measurements were carried out on Si(100) substrates and the values reported are atomic percentages (atom %). Growth rate of pure In2S3 a) as function of the process temperature b) as function of the In(acac)3 pulse length. Influence of the number of In2O3 cycles on (a) the

Effect of normal load and roughness on the nanoscale friction coefficient in the elastic and plastic contact regime

• Aditya Kumar,
• Thorsten Staedler and
• Xin Jiang

Beilstein J. Nanotechnol. 2013, 4, 66–71, doi:10.3762/bjnano.4.7

• nanoindentation-based scratch test with linearly increasing load. Experimental Samples: As mentioned above, fused silica and DLC were chosen as sample materials. The fused silica was provided as a standard sample by Hysitron Inc. The DLC samples, 1µm thick films on Si(100) wafer, were synthesized by chemical

Tuning the properties of magnetic thin films by interaction with periodic nanostructures

• Ulf Wiedwald,
• Felix Haering,
• Stefan Nau,
• Carsten Schulze,
• Herbert Schletter,
• Denys Makarov,
• Alfred Plettl,
• Karsten Kuepper,
• Manfred Albrecht,
• Johannes Boneberg and
• Paul Ziemann

Beilstein J. Nanotechnol. 2012, 3, 831–842, doi:10.3762/bjnano.3.93

• monolayers of self-assembled Au particles on thermally oxidized Si(100) substrates [28]. The Au colloid solution was diluted with pure ethanol in the volume ratio of 2:1. A volume of 60 µL of such solution was dispersed onto the substrates and dried under ambient conditions in a covered box to prevent air

Effect of spherical Au nanoparticles on nanofriction and wear reduction in dry and liquid environments

• Dave Maharaj and
• Bharat Bhushan

Beilstein J. Nanotechnol. 2012, 3, 759–772, doi:10.3762/bjnano.3.85

• also attractive due to its environmentally friendly nature. Materials and sample preparation Si (100) silicon wafers with a native oxide layer (University Wafers, Boston, MA) were ultrasonically cleaned in DI water, followed by isopropyl alcohol (IPA) and finally acetone for 15 min each. For

• experiments involving nanoparticle-coated surfaces under dry conditions, several droplets of Au nanoparticles suspended in DI water (Nanopartz, Inc., Loveland, CO) were deposited onto the clean Si (100) substrate by using a syringe. A 25% concentration of an initial 0.05 mg/mL solution was used for all

Ordered arrays of nanoporous gold nanoparticles

• Dong Wang,
• Ran Ji,
• Arne Albrecht and
• Peter Schaaf

Beilstein J. Nanotechnol. 2012, 3, 651–657, doi:10.3762/bjnano.3.74

• schematically presented in Figure 1. The surface of a Si(100) wafer was patterned into a periodic array of pyramidal pits (Figure S1, Supporting Information File 1) by using SCIL, reactive ion etching (RIE), and KOH etching. The spatial period of these pits is 520 nm. A 200 nm layer of SiO2 was thermally grown

• areas of both the nanoparticles and nanoporous materials. Experimental The surface of a Si(100) wafer was structured into periodic array of pyramidal pits by using SCIL, reactive ion etching (RIE, Oxford Plasmalab 100), and KOH etching. Before application of the resist for SCIL, 200 nm of SiO2 was

Focused electron beam induced deposition: A perspective

• Michael Huth,
• Fabrizio Porrati,
• Christian Schwalb,
• Marcel Winhold,
• Roland Sachser,
• Maja Dukic,
• Jonathan Adams and
• Georg Fantner

Beilstein J. Nanotechnol. 2012, 3, 597–619, doi:10.3762/bjnano.3.70

• current were 5 kV and 930 pA, respectively. The molecular flux ratio of the two precursor species was controlled by the distance of the Si5H12 gas injection capillary to the substrate surface (p-doped Si(100) with 300 nm thermally grown oxide), as well as a fine-dosing valve to control the Si5H12

• Nova NanoLab 600) at 5 keV beam energy and 1.6 nA current. The writing parameters were 20 nm pitch and 1 μs dwell time. p-Doped Si (100) substrates with 200 nm of thermally grown oxide were used. The structures were deposited between Au/Cr contacts previously defined by standard lithographic means. The

Synthesis and electrical characterization of intrinsic and in situ doped Si nanowires using a novel precursor

• Wolfgang Molnar,
• Alois Lugstein,
• Tomasz Wojcik,
• Peter Pongratz,
• Norbert Auner,
• Christian Bauch and
• Emmerich Bertagnolli

Beilstein J. Nanotechnol. 2012, 3, 564–569, doi:10.3762/bjnano.3.65

• precursor gas flow was stopped, and the quartz tube was purged with He for a further 5 min before the sample was removed from the APCVD system. For contacting the NWs, 200 × 200 µm2 Au pads were structured on a highly doped Si (100) wafer, capped with 80 nm Al2O3, by photolithography and lift-off techniques

• . VLS-grown Si-NWs were then removed from their growth substrates by ultrasonication in propan-2-ol. Subsequently the NWs were randomly distributed by dropping the suspension onto the above mentioned Si(100) wafer with prepatterned Au pads. Finally the NWs were connected to the prepatterned Au pads by

Spontaneous dissociation of Co₂(CO)₈ and autocatalytic growth of Co on SiO₂: A combined experimental and theoretical investigation

• Kaliappan Muthukumar,
• Harald O. Jeschke,
• Roser Valentí,
• Evgeniya Begun,
• Johannes Schwenk,
• Fabrizio Porrati and
• Michael Huth

Beilstein J. Nanotechnol. 2012, 3, 546–555, doi:10.3762/bjnano.3.63

• electron emitter. A plasma source using ambient air at a chamber pressure of 1 × 10−4 to 5 × 10−4 mbar was used for the surface-activation experiment (GV10x Downstream Asher, ibss Group). Electron pregrowth irradiation experiments were carried out at 5 kV beam voltage and 1.6 nA beam current. Si(100) (p

Electron-beam patterned self-assembled monolayers as templates for Cu electrodeposition and lift-off

• Zhe She,
• Andrea DiFalco,
• Georg Hähner and
• Manfred Buck

Beilstein J. Nanotechnol. 2012, 3, 101–113, doi:10.3762/bjnano.3.11

• ) 100 nm of Au evaporated onto a Si(100) wafer with a 5 nm titanium interlayer; (ii) 300 nm of Au on 300 nm of silver on mica slides. Both Ti and Ag served as adhesion promoters. Substrates were cut into 3–5 cm2 pieces. SAMs were prepared by immersion of the substrate into a 100 µM solution of ω-(4

Substrate-mediated effects in photothermal patterning of alkanethiol self-assembled monolayers with microfocused continuous-wave lasers

• Anja Schröter,
• Mark Kalus and
• Nils Hartmann

Beilstein J. Nanotechnol. 2012, 3, 65–74, doi:10.3762/bjnano.3.8

• parallel laser processing, e.g., by using micromirror displays, appears to be feasible. Experimental Au-coated Si and glass supports from commercial suppliers were used as substrates (Albert PVD, Phasis). Si (100) wafers and borosilicate glass slides were chosen as the support materials. A thin Ti film

Direct-write polymer nanolithography in ultra-high vacuum

• Woo-Kyung Lee,
• Minchul Yang,
• Arnaldo R. Laracuente,
• William P. King,
• Lloyd J. Whitman and
• Paul E. Sheehan

Beilstein J. Nanotechnol. 2012, 3, 52–56, doi:10.3762/bjnano.3.6

• 0.24 ± 0.04 nm [19]. In contrast, Terada et al. [20] reported poly(3-hexylthiophene) (P3HT) on H-terminated Si(100) in UHV to be 0.5 nm thick. Our measured value is closer to the 0.4 nm intermolecular spacing measured for thick films of PDDT [14]. In the prior STM measurements, the measured thickness

Effect of the tip state during qPlus noncontact atomic force microscopy of Si(100) at 5 K: Probing the probe

• Adam Sweetman,
• Sam Jarvis,
• Rosanna Danza and
• Philip Moriarty

Beilstein J. Nanotechnol. 2012, 3, 25–32, doi:10.3762/bjnano.3.3

• functionalised tips has provided additional impetus to elucidating the role of the tip apex in the observed contrast. Results: We present an analysis of the influence of the tip apex during imaging of the Si(100) substrate in ultra-high vacuum (UHV) at 5 K using a qPlus sensor for noncontact atomic force

• excitation of silicon dimers, which is a key issue in scanning probe studies of Si(100). Conclusion: A wide range of novel imaging mechanisms are demonstrated on the Si(100) surface, which can only be explained by variations in the precise structural configuration at the apex of the tip. Such images provide

• ; noncontact AFM; qPlus; Si(001); Si(100); tip (apex) structure; Introduction It is now generally accepted that atomic resolution in NC-AFM imaging on semiconducting surfaces is due to the chemical force between the atoms of the surface and the last few atoms of the tip apex [1][2][3][4]. Even with well

Nanostructured, mesoporous Au/TiO₂ model catalysts – structure, stability and catalytic properties

• Matthias Roos,
• Dominique Böcking,
• Kwabena Offeh Gyimah,
• Gabriela Kucerova,
• Joachim Bansmann,
• Johannes Biskupek,
• Ute Kaiser,
• Nicola Hüsing and
• R. Jürgen Behm

Beilstein J. Nanotechnol. 2011, 2, 593–606, doi:10.3762/bjnano.2.63

• tetraisopropoxide and Pluronic P123 on planar Si(100) substrates, calcination at 350 °C and subsequent Au loading by a deposition–precipitation procedure, followed by a final calcination step for catalyst activation. The structural and chemical properties of these model systems were characterized by X-ray

• and catalytic properties of ultra-thin Au/TiO2 catalyst films, which were prepared by spin-coating a thin film of mesoporous TiO2 of 200–400 nm thickness on a flat Si(100) substrate and subsequent loading with Au nanoparticles. After describing the experimental procedures, we first present

• , spinning speeds of 2000 rpm (for 420 nm thickness) and 6000 rpm (for 190 nm thickness) were used instead for 30 s. The Si(100) wafer was cut into small pieces (9 mm × 9 mm) prior to the coating procedure. To remove possible organic contaminants, the wafer was cleaned with acetone, rinsed with distilled

Tip-enhanced Raman spectroscopic imaging of patterned thiol monolayers

• Johannes Stadler,
• Thomas Schmid,
• Lothar Opilik,
• Phillip Kuhn,
• Petra S. Dittrich and
• Renato Zenobi

Beilstein J. Nanotechnol. 2011, 2, 509–515, doi:10.3762/bjnano.2.55

• [30]. Template-stripped gold films were created using a similar method to that described in [35], by coating polished Si(100) wafers (Si-Mat, Landsberg, Germany) in a Bal-Tec Med 020 coating chamber at pressures below 1 × 10−5 mbar, with gold (99.99%, Leica, Wetzlar, Germany) evaporated by resistive

Magnetic coupling mechanisms in particle/thin film composite systems

• Giovanni A. Badini Confalonieri,
• Philipp Szary,
• Durgamadhab Mishra,
• Maria J. Benitez,
• Mathias Feyen,
• An Hui Lu,
• Leonardo Agudo,
• Gunther Eggeler,
• Oleg Petracic and
• Hartmut Zabel

Beilstein J. Nanotechnol. 2010, 1, 101–107, doi:10.3762/bjnano.1.12

• mg of NPs per 5 ml of toluene, was spin-coated at 3000 rpm for 30 s on top of a Si(100) substrate with a natural oxide layer. As a result of the spin-coating process, approximately one monolayer of self-organized particles was formed having hexagonal closed-packed lateral order (see Figure 1). The