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Search for "dopants" in Full Text gives 83 result(s) in Beilstein Journal of Nanotechnology.

Oriented zinc oxide nanorods: A novel saturable absorber for lasers in the near-infrared

  • Pavel Loiko,
  • Tanujjal Bora,
  • Josep Maria Serres,
  • Haohai Yu,
  • Magdalena Aguiló,
  • Francesc Díaz,
  • Uwe Griebner,
  • Valentin Petrov,
  • Xavier Mateos and
  • Joydeep Dutta

Beilstein J. Nanotechnol. 2018, 9, 2730–2740, doi:10.3762/bjnano.9.255

Graphical Abstract
  • + and O2− ions stacked along the [001]-axis. Thus, there are many options to accommodate intrinsic defects (e.g., interstitial Zn2+ ions, Zni, or O2− vacancies, VO, which are the most widespread ones), as well as external dopants (e.g., divalent transition-metal ions M2+ entering into the Td sites
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Published 23 Oct 2018

Two-dimensional semiconductors pave the way towards dopant-based quantum computing

  • José Carlos Abadillo-Uriel,
  • Belita Koiller and
  • María José Calderón

Beilstein J. Nanotechnol. 2018, 9, 2668–2673, doi:10.3762/bjnano.9.249

Graphical Abstract
  • 21941-972, Brazil 10.3762/bjnano.9.249 Abstract Since the proposal in 1998 to build a quantum computer using dopants in silicon as qubits, much progress has been made in the nanofabrication of semiconductors and the control of charge and spins in single dopants. However, an important problem remains
  • unsolved, namely the control over exchange interactions and tunneling between two donors, which presents a peculiar oscillatory behavior as the dopants relative positions vary at the scale of the lattice parameter. Such behavior is due to the valley degeneracy in the conduction band of silicon, and does
  • not occur when the conduction-band edge is at k = 0. We investigate the possibility of circumventing this problem by using two-dimensional (2D) materials as hosts. Dopants in 2D systems are more tightly bound and potentially easier to position and manipulate. Moreover, many of them present the
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Published 12 Oct 2018

Metal-free catalysis based on nitrogen-doped carbon nanomaterials: a photoelectron spectroscopy point of view

  • Mattia Scardamaglia and
  • Carla Bittencourt

Beilstein J. Nanotechnol. 2018, 9, 2015–2031, doi:10.3762/bjnano.9.191

Graphical Abstract
  • (χ = 3.04) and B, P or S (χ = 2.04, 2.19, 2.58, respectively), as illustrated in Figure 4. The coupling of the donor and acceptor activity of both dopants generates an increase in the ORR activity, with better performance than single-doped materials. The reason for the enhanced catalytic activity
  • cannot be simply associated to an increase in the available active sites. In addition, synergistic effects of both dopants need to be taken into account. Synthesis and properties of nitrogen-doped graphene Nitrogen doping of carbon nanostructures can be performed either during the synthesis or by post
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Published 18 Jul 2018

Sulfur-, nitrogen- and platinum-doped titania thin films with high catalytic efficiency under visible-light illumination

  • Boštjan Žener,
  • Lev Matoh,
  • Giorgio Carraro,
  • Bojan Miljević and
  • Romana Cerc Korošec

Beilstein J. Nanotechnol. 2018, 9, 1629–1640, doi:10.3762/bjnano.9.155

Graphical Abstract
  • added. Afterwards, sources of metal and nonmetal dopants and hydroxypropyl cellulose were added. Table 1 shows sample labels, types and amounts of added dopants, thermal treatment temperatures and calculated crystallite sizes for different samples. The measured atomic percentages of dopants were
  • , which acted as sources of metal and nonmetal dopants (e.g., urea, thiourea, ammonium nitrate – NH4NO3, chloroplatinic acid – H2PtCl6) and hydroxypropyl cellulose (HPC, an organic polymer, which increases the porosity of materials) were added. After deposition on glass substrates with dip-coating, the
  • performed for sample S3. First-order rate constant for plasmocorinth B degradation for selected photocatalysts synthesized in this work. Sample labels, types and amounts of added dopants, thermal treatment temperatures and calculated crystallite sizes for different samples. BET specific surface area and
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Published 04 Jun 2018

Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride

  • Daniel Hiller,
  • Julian López-Vidrier,
  • Keita Nomoto,
  • Michael Wahl,
  • Wolfgang Bock,
  • Tomáš Chlouba,
  • František Trojánek,
  • Sebastian Gutsch,
  • Margit Zacharias,
  • Dirk König,
  • Petr Malý and
  • Michael Kopnarski

Beilstein J. Nanotechnol. 2018, 9, 1501–1511, doi:10.3762/bjnano.9.141

Graphical Abstract
  • of thermal activation via, e.g., a high-temperature annealing process a significant fraction of potential dopants will remain on interstitial sites [3]. The decreasing number of Si–Si bonds per Si NC atom is a crucial point for the increase of dopant formation energies [4]. These factors impede
  • , for both dopants there is a concentration overlap region (indicated by grey boxes in Figure 1) for P in the range of 0.6 ± 0.1 atom % and for B in the range of 0.13 ± 0.02 atom %. Any direct comparison between doped SRO and SRON samples should hence be made in that overlap region to allow for equal
  • nominal dopant concentrations. While the dopant-precursor flows are similar for each Si-rich oxide type, the average concentration of dopants is a factor of ≈5 lower for B than P, although the same amount of B2H6 gas contains twice the number of dopant atoms compared to PH3. As a consequence, the
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Published 18 May 2018

Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot

  • Tarek A. Ameen,
  • Hesameddin Ilatikhameneh,
  • Archana Tankasala,
  • Yuling Hsueh,
  • James Charles,
  • Jim Fonseca,
  • Michael Povolotskyi,
  • Jun Oh Kim,
  • Sanjay Krishna,
  • Monica S. Allen,
  • Jeffery W. Allen,
  • Rajib Rahman and
  • Gerhard Klimeck

Beilstein J. Nanotechnol. 2018, 9, 1075–1084, doi:10.3762/bjnano.9.99

Graphical Abstract
  • states in valence and conduction bands, Fi = 1, while Ff depends on the energy level and doping. Normally, quantum dots are occupied by a number of electrons equal to the average number of dopants per dot [34]. This approach is reasonable for quantum dots that are far from heavily doped regions. However
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Published 04 Apr 2018

Optical orientation of nematic liquid crystal droplets via photoisomerization of an azodendrimer dopant

  • Sergey A. Shvetsov,
  • Alexander V. Emelyanenko,
  • Natalia I. Boiko,
  • Alexander S. Zolot'ko,
  • Yan-Song Zhang,
  • Jui-Hsiang Liu and
  • Alexei R. Khokhlov

Beilstein J. Nanotechnol. 2018, 9, 870–879, doi:10.3762/bjnano.9.81

Graphical Abstract
  • polymer dopants, such as a dendrimer with azobenzene terminal moieties [22][23] or a comb-shaped polymer with H-bonded side-chain azobenzene fragments [24][25], can induce the homogeneous orientation of NLC films. These polymer additives are usually adsorbed onto the cell substrates and provide
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Published 13 Mar 2018

Design of polar self-assembling lactic acid derivatives possessing submicrometre helical pitch

  • Alexej Bubnov,
  • Cyril Vacek,
  • Michał Czerwiński,
  • Terezia Vojtylová,
  • Wiktor Piecek and
  • Věra Hamplová

Beilstein J. Nanotechnol. 2018, 9, 333–341, doi:10.3762/bjnano.9.33

Graphical Abstract
  • derivatives demonstrate their high ability to be used as smart and functional dopants for the design and tailoring of the advanced multicomponent LC mixtures [21][22][23][24][25] and LC composite materials [25][26][27][28][29][30][31][32] and tuning their properties. It is quite obvious that the weakening of
  • compounds with the keto group in the molecular core can be very useful as chiral dopants for advanced mixtures [9][47][56] aimed for specific applications due to the wide temperature range of the ferroelectric SmC* phase down to room temperature and the relatively high spontaneous polarisation. By simply
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Published 29 Jan 2018

Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy

  • Alexey D. Bolshakov,
  • Alexey M. Mozharov,
  • Georgiy A. Sapunov,
  • Igor V. Shtrom,
  • Nickolay V. Sibirev,
  • Vladimir V. Fedorov,
  • Evgeniy V. Ubyivovk,
  • Maria Tchernycheva,
  • George E. Cirlin and
  • Ivan S. Mukhin

Beilstein J. Nanotechnol. 2018, 9, 146–154, doi:10.3762/bjnano.9.17

Graphical Abstract
  • transition occurs. We assume that this effect is related to a variation in the radial distribution of the Si dopants along the NW axis. In the lower part of the NW, elastic stress should reduce the Si incorporation barrier in the NW lattice, especially in the central part where the stress is higher
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Published 15 Jan 2018

Thermo- and electro-optical properties of photonic liquid crystal fibers doped with gold nanoparticles

  • Agata Siarkowska,
  • Miłosz Chychłowski,
  • Daniel Budaszewski,
  • Bartłomiej Jankiewicz,
  • Bartosz Bartosewicz and
  • Tomasz R. Woliński

Beilstein J. Nanotechnol. 2017, 8, 2790–2801, doi:10.3762/bjnano.8.278

Graphical Abstract
  • , Warsaw, Poland 10.3762/bjnano.8.278 Abstract Thermo- and electro-optical properties of a photonic liquid crystal fiber (PLCF) enhanced by the use of dopants have been investigated. A 6CHBT nematic liquid crystal was doped with four different concentrations of gold nanoparticles (NPs), 0.1, 0.3, 0.5 and
  • strongly influence the intrinsic properties of the NP-doped LC [13]. However, the use of such dopants also comes with new difficulties. One of the crucial issues is NP aggregation, especially in mixtures with higher concentrations of NPs. At low concentrations (below 1 wt %), diluted NP suspensions will be
  • about 8.0 V/µm and higher, the relaxation time could exceed even the times for an undoped LC. This effect could be connected with the electric constant of metallic dopants. High concentrations of Au NPs give good response times (25–30% shorter than for the undoped LC), but the relaxation times reduce
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Published 27 Dec 2017

Fabrication of CeO2–MOx (M = Cu, Co, Ni) composite yolk–shell nanospheres with enhanced catalytic properties for CO oxidation

  • Ling Liu,
  • Jingjing Shi,
  • Hongxia Cao,
  • Ruiyu Wang and
  • Ziwu Liu

Beilstein J. Nanotechnol. 2017, 8, 2425–2437, doi:10.3762/bjnano.8.241

Graphical Abstract
  • bond by sharing oxygen at the interface [29][30]. In addition, the incorporation of dopants can also result in shifts of the peak positions. This is, e.g., because the ion radius of M2+ (Cu2+ = 0.72 Å, Co2+ = 0.79 Å, Ni2+ = 0.83 Å) is much smaller than that of Ce4+ (1.01 Å). Also, when a small number
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Published 16 Nov 2017

Substrate and Mg doping effects in GaAs nanowires

  • Perumal Kannappan,
  • Nabiha Ben Sedrine,
  • Jennifer P. Teixeira,
  • Maria R. Soares,
  • Bruno P. Falcão,
  • Maria R. Correia,
  • Nestor Cifuentes,
  • Emilson R. Viana,
  • Marcus V. B. Moreira,
  • Geraldo M. Ribeiro,
  • Alfredo G. de Oliveira,
  • Juan C. González and
  • Joaquim P. Leitão

Beilstein J. Nanotechnol. 2017, 8, 2126–2138, doi:10.3762/bjnano.8.212

Graphical Abstract
  • measurements on the epilayer. The difference between the free hole concentration and the nominal Mg concentration can be related to some degree of compensation or to the change of ionization energy of dopants close to the nanowire surface [57][58][59]. The optical properties were investigated by PL
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Published 11 Oct 2017

Synthesis and functionalization of NaGdF4:Yb,Er@NaGdF4 core–shell nanoparticles for possible application as multimodal contrast agents

  • Dovile Baziulyte-Paulaviciene,
  • Vitalijus Karabanovas,
  • Marius Stasys,
  • Greta Jarockyte,
  • Vilius Poderys,
  • Simas Sakirzanovas and
  • Ricardas Rotomskis

Beilstein J. Nanotechnol. 2017, 8, 1815–1824, doi:10.3762/bjnano.8.183

Graphical Abstract
  • effects of luminescence quenching from the addition of ligands and/or surface defects and therefore a significant increase in the UCL can be observed. For the core-only nanoparticles, lanthanide dopants are exposed to surface deactivations owing to the high surface-to-volume ratio at the nanometer
  • lanthanide dopants from being quenched, and also negate the influence of surface defects. The results correlate well with what is presented in the literature. Yi et al. reported that the UC emissions of hexagonal phase NaYF4:Yb3+,Er3+ were enhanced by as much as seven times by growth of a 2 nm layer of NaYF4
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Published 01 Sep 2017

Group-13 and group-15 doping of germanane

  • Nicholas D. Cultrara,
  • Maxx Q. Arguilla,
  • Shishi Jiang,
  • Chuanchuan Sun,
  • Michael R. Scudder,
  • R. Dominic Ross and
  • Joshua E. Goldberger

Beilstein J. Nanotechnol. 2017, 8, 1642–1648, doi:10.3762/bjnano.8.164

Graphical Abstract
  • properties of single flakes show that incorporation of dopants leads to a reduction of resistance of more than three orders of magnitude in H2O-containing atmosphere after As doping. After doping with Ga, the reduction is more than six orders of magnitude, but with significant hysteretic behavior, indicative
  • of water-activation of dopants on the surface. Only Ga-doped germanane remains activated under vacuum, and also exhibits minimal hysteretic behavior while the sheet resistance is reduced by more than four orders of magnitude. These Ga- and As-doped germanane materials start to oxidize after one to
  • need of extrinsic dopants to access devices with lower resistivity. In previous studies, the resistivity of germanane was reduced through the incorporation of phosphorus only when activated in the presence of atmospheric water [29]. Recently [30], undoped germanane field-effect transistors were
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Published 09 Aug 2017

Calcium fluoride based multifunctional nanoparticles for multimodal imaging

  • Marion Straßer,
  • Joachim H. X. Schrauth,
  • Sofia Dembski,
  • Daniel Haddad,
  • Bernd Ahrens,
  • Stefan Schweizer,
  • Bastian Christ,
  • Alevtina Cubukova,
  • Marco Metzger,
  • Heike Walles,
  • Peter M. Jakob and
  • Gerhard Sextl

Beilstein J. Nanotechnol. 2017, 8, 1484–1493, doi:10.3762/bjnano.8.148

Graphical Abstract
  • fluorite with a composition of CaF2. The doping levels are in the intended range of 1 mol %. However, there is a lower content of Tb3+ and Gd3+ (total amount of 1.83 mol %), which indicates a higher reaction rate of calcium compared to the dopants. This could be correlated to the different ion radii
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Published 18 Jul 2017

Graphene functionalised by laser-ablated V2O5 for a highly sensitive NH3 sensor

  • Margus Kodu,
  • Artjom Berholts,
  • Tauno Kahro,
  • Mati Kook,
  • Peeter Ritslaid,
  • Helina Seemen,
  • Tea Avarmaa,
  • Harry Alles and
  • Raivo Jaaniso

Beilstein J. Nanotechnol. 2017, 8, 571–578, doi:10.3762/bjnano.8.61

Graphical Abstract
  • , No. 2 and 3). Thus, decoration of graphene with V2O5 lends the sensor some degree of selectivity, and good sensitivity with respect to the reducing pollutant NH3. The introduction of dopants and clusters of atoms into graphene strongly increases the interaction with adsorbing molecules, due to an
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Published 07 Mar 2017
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  • abovementioned properties of the SnO2 thin films strongly depend on their deviation from stoichiometry, the amount of dopants/impurities and the microstructure of the films. All these properties can be affected by the deposition method, and by post-deposition processing. Lately, the mainstream of worldwide
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Published 27 Feb 2017

In-situ monitoring by Raman spectroscopy of the thermal doping of graphene and MoS2 in O2-controlled atmosphere

  • Aurora Piazza,
  • Filippo Giannazzo,
  • Gianpiero Buscarino,
  • Gabriele Fisichella,
  • Antonino La Magna,
  • Fabrizio Roccaforte,
  • Marco Cannas,
  • Franco Mario Gelardi and
  • Simonpietro Agnello

Beilstein J. Nanotechnol. 2017, 8, 418–424, doi:10.3762/bjnano.8.44

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  • application such as thin flexible circuits and interconnecting transparent conductive electrodes for solar cells and/or touch screens [6]. Among the possible dopants for Gr, an easily accessible and promising one is oxygen. It acts as a p-type dopant and can also be activated by thermal treatments [13][14
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Published 10 Feb 2017

Layered composites of PEDOT/PSS/nanoparticles and PEDOT/PSS/phthalocyanines as electron mediators for sensors and biosensors

  • Celia García-Hernández,
  • Cristina García-Cabezón,
  • Fernando Martín-Pedrosa,
  • José Antonio De Saja and
  • María Luz Rodríguez-Méndez

Beilstein J. Nanotechnol. 2016, 7, 1948–1959, doi:10.3762/bjnano.7.186

Graphical Abstract
  • and resistivity were measured with the four-point probe test (Table 1). The current–voltage curves obtained from PEDOT/PSS and PEDOT/PSS/EM electrodes exhibited a good linear fit with correlation coefficients higher than 0.999. It has been reported that the addition of different dopants to an aqueous
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Published 08 Dec 2016

Ferromagnetic behaviour of ZnO: the role of grain boundaries

  • Boris B. Straumal,
  • Svetlana G. Protasova,
  • Andrei A. Mazilkin,
  • Eberhard Goering,
  • Gisela Schütz,
  • Petr B. Straumal and
  • Brigitte Baretzky

Beilstein J. Nanotechnol. 2016, 7, 1936–1947, doi:10.3762/bjnano.7.185

Graphical Abstract
  • doping facilitates the appearance of ferromagnetism in ZnO. It increases the saturation magnetisation and decreases the critical amount of grain boundaries needed for FM. A drastic increase of the total solubility of dopants in ZnO with decreasing grain size has been also observed. It is explained by the
  • ]. As a result, sth increases with doping starting from pure ZnO. The following sth values for different dopants have been observed: pure ZnO sth = 5.3 × 107 m2/m3 [7], cobalt-doped ZnO, sth = 1.5 × 106 m2/m3 [8], manganese-doped ZnO, sth = 2.4 × 105 m2/m3 [7], nickel-doped ZnO, is sth = 1.0 × 106 m2/m3
  • charge of doped ZnO. However, if the concentration of oxygen changes, the whole structure of the nanograined zinc oxide should change, like for example the structure and properties of titanium oxide changes by the addition of dopants with different valence [37]. We compared in [8][9][26] the shape of our
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Published 07 Dec 2016

A new approach to grain boundary engineering for nanocrystalline materials

  • Shigeaki Kobayashi,
  • Sadahiro Tsurekawa and
  • Tadao Watanabe

Beilstein J. Nanotechnol. 2016, 7, 1829–1849, doi:10.3762/bjnano.7.176

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  • boundaries, their crystallographic plane, triple junctions and dopants. Accordingly, we expect that GBE based on the control of grain boundary microstructure must be useful for future improvement of electrical conductivity in polycrystalline materials, especially nanocrystalline materials which can be
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Published 25 Nov 2016

Fast diffusion of silver in TiO2 nanotube arrays

  • Wanggang Zhang,
  • Yiming Liu,
  • Diaoyu Zhou,
  • Hui Wang,
  • Wei Liang and
  • Fuqian Yang

Beilstein J. Nanotechnol. 2016, 7, 1129–1140, doi:10.3762/bjnano.7.105

Graphical Abstract
  • migration of atoms (dopants), which determine the functionality of TiO2-based materials. Although recent success in improving the photocatalytic activity and energy storage of Li ions in TiO2-based materials has been reported [26][27][28][29], the understanding of the migration of atoms (dopants) in TiO2
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Published 03 Aug 2016

Synthesis and applications of carbon nanomaterials for energy generation and storage

  • Marco Notarianni,
  • Jinzhang Liu,
  • Kristy Vernon and
  • Nunzio Motta

Beilstein J. Nanotechnol. 2016, 7, 149–196, doi:10.3762/bjnano.7.17

Graphical Abstract
  • naphthalene, corannulene or others, but it requires high energy. Dehydrohalogenation of precursors can also be a valid chemical method to form C60 from a chloroaromatic compound, as shown for example in Figure 7 [32]. Fullerenes can also be modified by putting dopants inside the structure. Fullerenes with
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Published 01 Feb 2016

Chemical bath deposition of textured and compact zinc oxide thin films on vinyl-terminated polystyrene brushes

  • Nina J. Blumenstein,
  • Caroline G. Hofmeister,
  • Peter Lindemann,
  • Cheng Huang,
  • Johannes Baier,
  • Andreas Leineweber,
  • Stefan Walheim,
  • Christof Wöll,
  • Thomas Schimmel and
  • Joachim Bill

Beilstein J. Nanotechnol. 2016, 7, 102–110, doi:10.3762/bjnano.7.12

Graphical Abstract
  • collection [9][10][11][12][13]. With respect to ZnO, bio-templates are used for tailoring the morphology and crystallite sizes of ZnO [13][14][15][16][17][18][19][20][21][22][23], whereas n-type impurity dopants (e.g., Al3+, Ga3+ or In3+) have a significant influence on its optical properties [1][2][24][25
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Published 25 Jan 2016

Dependence of lattice strain relaxation, absorbance, and sheet resistance on thickness in textured ZnO@B transparent conductive oxide for thin-film solar cell applications

  • Kuang-Yang Kou,
  • Yu-En Huang,
  • Chien-Hsun Chen and
  • Shih-Wei Feng

Beilstein J. Nanotechnol. 2016, 7, 75–80, doi:10.3762/bjnano.7.9

Graphical Abstract
  • , doping impurities, such as B, Al, and Ga, can improve the electrical transport properties of ZnO [18]. There are two benefits to using a B-doped ZnO (ZnO@B) film as the TCO layer. First, B has the smallest ionic radius among the three dopants (B3+: 0.23Å, Al3+: 0.54 Å, Ga3+: 0.62 Å,), which results in
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Published 20 Jan 2016
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