Advances in the fabrication of graphene transistors on flexible substrates

• Gabriele Fisichella,
• Stella Lo Verso,
• Silvestra Di Marco,
• Vincenzo Vinciguerra,
• Emanuela Schilirò,
• Salvatore Di Franco,
• Raffaella Lo Nigro,
• Fabrizio Roccaforte,
• Amaia Zurutuza,
• Alba Centeno,
• Sebastiano Ravesi and
• Filippo Giannazzo

Beilstein J. Nanotechnol. 2017, 8, 467–474, doi:10.3762/bjnano.8.50

• dielectric material for FETs on plastic. Fabrication and electrical characterization of Gr-FETs on flexible substrates We fabricated several arrays of independently back-gated Gr-FETs by adopting a specifically optimized process flow. In particular, we considered large area devices with channel widths and

• arrays of independently biased back-gated Gr-FETs with different channel geometries were fabricated on the wafer scale using the above described process flow. The electrical characterization of more than 50 devices revealed a significant number of early failures. The origin of these failures is out of

• performance. The optimized dielectric material deposition was exploited in order to fabricate back-gated Gr-FETs directly on a PEN substrate, with a gate oxide thickness of 30 nm. Electrical characterization of the Gr-FET devices is reported in order to evaluate key electrical parameters such as the transfer

Impact of contact resistance on the electrical properties of MoS₂ transistors at practical operating temperatures

• Filippo Giannazzo,
• Gabriele Fisichella,
• Aurora Piazza,
• Salvatore Di Franco,
• Giuseppe Greco,
• Simonpietro Agnello and
• Fabrizio Roccaforte

Beilstein J. Nanotechnol. 2017, 8, 254–263, doi:10.3762/bjnano.8.28

• voltage (Vth). This paper reports a detailed electrical characterization of back-gated multilayer MoS2 transistors with Ni source/drain contacts at temperatures from T = 298 to 373 K, i.e., the expected range for transistor operation in circuits/systems, considering heating effects due to inefficient

• to transfer the exfoliated MoS2 flakes onto the SiO2 surface that was previously cleaned using solvents and a soft O2 plasma treatment. Finally, source and drain contacts were obtained by deposition and lift-off of a Ni(50 nm)/Au(100 nm) bilayer. The temperature-dependent electrical characterization

Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals

• Ivan Shtepliuk,
• Jens Eriksson,
• Volodymyr Khranovskyy,
• Tihomir Iakimov,
• Anita Lloyd Spetz and
• Rositsa Yakimova

Beilstein J. Nanotechnol. 2016, 7, 1800–1814, doi:10.3762/bjnano.7.173

• . Nevertheless, we believe that our calculations will be useful to uncover the common trends in nature of the interaction between planar structures of carbon-containing flakes and Cd, Hg and Pb. Results and Discussion Electrical characterization of the vertical graphene/SiC Schottky diodes As can be seen in

Fingerprints of a size-dependent crossover in the dimensionality of electronic conduction in Au-seeded Ge nanowires

• Maria Koleśnik-Gray,
• Gillian Collins,
• Justin D. Holmes and
• Vojislav Krstić

Beilstein J. Nanotechnol. 2016, 7, 1574–1578, doi:10.3762/bjnano.7.151

• properties in the NWs of choice as function of their radius R to identify their different operation regimes. To this end, we carried out electrical characterization at ambient conditions of individual Au-seeded Ge NWs with R ranging from 11 to 80 nm (cf. Supporting Information File 1). By experimentally

Diameter-driven crossover in resistive behaviour of heavily doped self-seeded germanium nanowires

• Stephen Connaughton,
• Maria Koleśnik-Gray,
• Richard Hobbs,
• Olan Lotty,
• Justin D. Holmes and
• Vojislav Krstić

Beilstein J. Nanotechnol. 2016, 7, 1284–1288, doi:10.3762/bjnano.7.119

• four-point probe configuration [11]. Electrical characterization was carried out at ambient conditions. The geometry of each NW device (diameter size and channel length) was determined by electron microscopy [11][16]. From this the NW resistivity was extracted as function of diameter (Figure 1). Upon

Photocurrent generation in carbon nanotube/cubic-phase HfO₂ nanoparticle hybrid nanocomposites

• Protima Rauwel,
• Augustinas Galeckas,
• Martin Salumaa,
• Frédérique Ducroquet and
• Erwan Rauwel

Beilstein J. Nanotechnol. 2016, 7, 1075–1085, doi:10.3762/bjnano.7.101

• capping layer. Photocurrent response For the electrical characterization, the nanocomposite is deposited on a glass slide and contacted using a micromanipulator manual probe station as shown in inset of Figure 5a. The dark current–voltage characteristic is mostly linear, as expected for an ohmic

Bacteriorhodopsin–ZnO hybrid as a potential sensing element for low-temperature detection of ethanol vapour

• Saurav Kumar,
• Sudeshna Bagchi,
• Senthil Prasad,
• Anupma Sharma,
• Ritesh Kumar,
• Rishemjit Kaur,
• Jagvir Singh and
• Amol P. Bhondekar

Beilstein J. Nanotechnol. 2016, 7, 501–510, doi:10.3762/bjnano.7.44

• charge carriers can move [79][80]. Conclusion Nanomaterial–biomolecule hybrids based on ZnO-TF or ZnO-NR functionalized with bR protein have been successfully fabricated on ITO substrates. The morphological, optical, and electrical characterization of these devices was presented. The behaviour of ZnO-TF

Charge injection and transport properties of an organic light-emitting diode

• Peter Juhasz,
• Juraj Nevrela,
• Michal Micjan,
• Miroslav Novota,
• Jan Uhrik,
• Lubica Stuchlikova,
• Jan Jakabovic,
• Ladislav Harmatha and
• Martin Weis

Beilstein J. Nanotechnol. 2016, 7, 47–52, doi:10.3762/bjnano.7.5

• improvement. In details, the organic–organic and metal–organic interfaces determine injection properties, whereas the conductivities of organic layers limit the charge transport properties. Charge transport in organic semiconductors has been widely studied by electrical characterization techniques such as

Large area scanning probe microscope in ultra-high vacuum demonstrated for electrostatic force measurements on high-voltage devices

• Urs Gysin,
• Thilo Glatzel,
• Thomas Schmölzer,
• Adolf Schöner,
• Sergey Reshanov,
• Holger Bartolf and
• Ernst Meyer

Beilstein J. Nanotechnol. 2015, 6, 2485–2497, doi:10.3762/bjnano.6.258

• scale of up to 100 μm in lateral and 25 μm in vertical direction under UHV conditions and at room temperature using a large-scale closed-loop scanner. Beside the topographic non-contact AFM mode also contact measurements as well as all major electrical characterization methods (SSRM, SCM, KPFM) are

• ambient conditions scan areas as large as 100 × 100 μm2 are available. Furthermore, the novel system provides a dedicated opto-electrical characterization using all major SPM techniques. In the following we will describe the key components of the new AFM. Beam deflection unit with optical excitation

Blue and white light emission from zinc oxide nanoforests

• Nafisa Noor,
• Luca Lucera,
• Thomas Capuano,
• Venkata Manthina,
• Alexander G. Agrios,
• Helena Silva and
• Ali Gokirmak

Beilstein J. Nanotechnol. 2015, 6, 2463–2469, doi:10.3762/bjnano.6.255

• observed light emission upon application of relatively high electric fields (≈3–7 V/µm) to the nanoforests using tungsten probes. We have performed electrical characterization at different ambient pressures and analyzed the resulting optical emission spectra and videos to determine the mechanisms giving

Current–voltage characteristics of manganite–titanite perovskite junctions

• Benedikt Ifland,
• Patrick Peretzki,
• Birte Kressdorf,
• Philipp Saring,
• Andreas Kelling,
• Michael Seibt and
• Christian Jooss

Beilstein J. Nanotechnol. 2015, 6, 1467–1484, doi:10.3762/bjnano.6.152

Structural transitions in electron beam deposited Co–carbonyl suspended nanowires at high electrical current densities

• Gian Carlo Gazzadi and
• Stefano Frabboni

Beilstein J. Nanotechnol. 2015, 6, 1298–1305, doi:10.3762/bjnano.6.134

• , and moving it towards the opposite side with 5 nm steps and dwell times varying between 10 and 35 ms in order to obtain the desired horizontal growth. Electrical characterization was done in situ using two nanomanipulated probes (Kleindiek MM3A-EM) connected to a Keithley 6487 source meter. The

• ]. Electrical characterization of SNW 1, shown in Figure 2a, was carried out inside the dual beam system. The bias range in this case was V = 0.1 V. In the first measurement, shown in the inset of Figure 2a (squares), the current starts increasing linearly with voltage, but around V = 0.07 V, a big spike from I

Growth and morphological analysis of segmented AuAg alloy nanowires created by pulsed electrodeposition in ion-track etched membranes

• Ina Schubert,
• Loic Burr,
• Christina Trautmann and
• Maria Eugenia Toimil-Molares

Beilstein J. Nanotechnol. 2015, 6, 1272–1280, doi:10.3762/bjnano.6.131

• wires have also great potential as electronic components [7] and, thus, Au nanowires separated by small gaps are very promising as nanowire electrodes that can be used as field effect transistors [48] and for the capture and electrical characterization of nanoparticles [49]. For all these applications

Electrical characterization of single molecule and Langmuir–Blodgett monomolecular films of a pyridine-terminated oligo(phenylene-ethynylene) derivative

• Henrry M. Osorio,
• Santiago Martín,
• María Carmen López,
• Santiago Marqués-González,
• Simon J. Higgins,
• Richard J. Nichols,
• Paul J. Low and
• Pilar Cea

Beilstein J. Nanotechnol. 2015, 6, 1145–1157, doi:10.3762/bjnano.6.116

Charge carrier mobility and electronic properties of Al(Op)₃: impact of excimer formation

• Andrea Magri,
• Pascal Friederich,
• Bernhard Schäfer,
• Valeria Fattori,
• Xiangnan Sun,
• Timo Strunk,
• Velimir Meded,
• Luis E. Hueso,
• Wolfgang Wenzel and
• Mario Ruben

Beilstein J. Nanotechnol. 2015, 6, 1107–1115, doi:10.3762/bjnano.6.112

• ranging from 10 to 100 μm and with channel width/length (W/L) ratios of 20000/10, 20000/20, 10000/50, and 5000/100. From the electrical characterization of the TFT devices, the transfer curves, which yield the charge carrier mobility, were determined. As an example, in Figure 5, the transfer curve

• relative to the TFT device with a channel length of 100 μm is shown. The curve clearly outlines a p-type transistor behavior of the device [33][34][35], and the on/off current ratio calculated from this curve is greater than 104. As a result of the electrical characterization of four Al(Op)3-based TFT

Chains of carbon atoms: A vision or a new nanomaterial?

• Florian Banhart

Beilstein J. Nanotechnol. 2015, 6, 559–569, doi:10.3762/bjnano.6.58

• a new impetus; in particular since a new generation of transmission electron microscopes (TEM) with improved spatial resolution became available. Most recently, the integration of scanning tunneling microscopy tips into the specimen stages of TEMs allowed the first electrical characterization [23

• also their electrical characterization [23]. By contacting a graphitic aggregate with a transition metal tip and passing an electrical current through the junction, carbon chains could be unraveled from the graphitic materials when the tip was retracted (Figure 3). The experiment was carried out under

• channels relative to the electronic states of the contact electrodes by the external bias [44][45]. The negative differential resistance has been proposed in order to explain an experimentally observed feature in the electrical characterization of breaking nanotubes [32]. Several computational studies

Electrical properties of single CdTe nanowires

• Elena Matei,
• Camelia Florica,
• Andreea Costas,
• María Eugenia Toimil-Molares and
• Ionut Enculescu

Beilstein J. Nanotechnol. 2015, 6, 444–450, doi:10.3762/bjnano.6.45

• the nanowires in chloroform and the process was repeated at least 5 times. The process was started with p.a.-grade chloroform and for the last two washing steps, semiconductor-grade chloroform was used. Thorough washing is important for precise electrical characterization since template remnants can

• determined by the Ga ion beam. The result is a stripe of a mixture of Pt–C–Ga with the desired geometry determined by the ion beam scanning pattern. A probe station was employed for performing the electrical characterization of individual nanowires. In order to investigate the effect of a gate on the

Low cost, p-ZnO/n-Si, rectifying, nano heterojunction diode: Fabrication and electrical characterization

• Vinay Kabra,
• Lubna Aamir and
• M. M. Malik

Beilstein J. Nanotechnol. 2014, 5, 2216–2221, doi:10.3762/bjnano.5.230

• crystalline phase of the p-ZnO nanoparticles. The Hall effect measurement system (ECOPIA, model HMS-3000) was used for electrical characterization of the sample. An electrometer (KEITHLEY, 6517B) was used for the current–voltage (I–V) measurements of the diode and an impedance analyzer (WAYNE KERR, 6500B) was

Electrical contacts to individual SWCNTs: A review

• Wei Liu,
• Christofer Hierold and
• Miroslav Haluska

Beilstein J. Nanotechnol. 2014, 5, 2202–2215, doi:10.3762/bjnano.5.229

• . As reported in [37][38], the oxygen molecules at the metal–CNT contact had an effect on the Schottky barrier height. Therefore, the measurement conditions (in vacuum or in air) should be considered during the electrical characterization. Determination of the contact and channel resistances Four

Sequence-dependent electrical response of ssDNA-decorated carbon nanotube, field-effect transistors to dopamine

• Hari Krishna Salila Vijayalal Mohan,
• Jianing An and
• Lianxi Zheng

Beilstein J. Nanotechnol. 2014, 5, 2113–2121, doi:10.3762/bjnano.5.220

• sensing. Electrical characterization All I–V measurements were made using a semiconductor device analyzer (Agilent, 4156B). The drain current (ID) versus gate voltage (VG) characteristics (transfer) were obtained at a drain voltage (VDS) of 1 V. The on conductance (Gon) is obtained from the slope of the

Effect of channel length on the electrical response of carbon nanotube field-effect transistors to deoxyribonucleic acid hybridization

• Hari Krishna Salila Vijayalal Mohan,
• Jianing An,
• Yani Zhang,
• Chee How Wong and
• Lianxi Zheng

Beilstein J. Nanotechnol. 2014, 5, 2081–2091, doi:10.3762/bjnano.5.217

• the channel was exposed were tested with 5 µL of cDNA and 1 µM ncDNA. Electrical characterization All electrical measurements were recorded using an Agilent 4156B semiconductor device analyzer under ambient laboratory conditions (25 ºC and <70% humidity). The drain current (ID) versus gate voltage (VG

Optical properties and electrical transport of thin films of terbium(III) bis(phthalocyanine) on cobalt

• Peter Robaschik,
• Pablo F. Siles,
• Daniel Bülz,
• Peter Richter,
• Manuel Monecke,
• Michael Fronk,
• Svetlana Klyatskaya,
• Daniel Grimm,
• Oliver G. Schmidt,
• Mario Ruben,
• Dietrich R. T. Zahn and
• Georgeta Salvan

Beilstein J. Nanotechnol. 2014, 5, 2070–2078, doi:10.3762/bjnano.5.215

• well-established methods for local electrical characterization in organic materials [20][21][22][23][24]. In this work, we employ the cs-AFM technique in order to investigate the local transport properties of TbPc2 thin films on Co substrates. Due to its high reproducibility and versatility, cs-AFM

• measurements AFM measurements for topography analysis and electrical characterization were performed on an Agilent 5500 AFM system. Measurements were performed under a controlled N2 environment to preserve the integrity and avoid exposure of the organic films to ambient conditions. Topography measurements were

Photodetectors based on carbon nanotubes deposited by using a spray technique on semi-insulating gallium arsenide

• Domenico Melisi,
• Maria Angela Nitti,
• Marco Valentini,
• Antonio Valentini,
• Teresa Ligonzo,
• Giuseppe De Pascali and
• Marianna Ambrico

Beilstein J. Nanotechnol. 2014, 5, 1999–2006, doi:10.3762/bjnano.5.208

• light in the range from ultraviolet to near infrared. The device spectral efficiency obtained from the electrical characterization is finally reported and an improvement of the photodetector behavior due to the nanotubes is presented and discussed. Keywords: multi-wall carbon nanotubes; photodetectors

• thickness of the CNT film and about the uniformity of its distribution on the GaAs substrate. In order to perform the electrical characterization, all the samples were mounted gluing the back side on an aluminium disk by using a silver paste, leaving the front side covered with CNTs for the light exposure

Silicon and germanium nanocrystals: properties and characterization

• Ivana Capan,
• Alexandra Carvalho and
• José Coutinho

Beilstein J. Nanotechnol. 2014, 5, 1787–1794, doi:10.3762/bjnano.5.189

• films. Here, significant progress has been made in free-standing Si NC films [22], but much more effort is needed, for instance by using different electrical characterization techniques, to understand the electrical properties of doped and embedded NCs. III Electronic structure models Effective mass

• enhancement. This is only valid for small NCs, while the enhancement diminishes as the density of larger NCs increases. As already mentioned, one of the main applications of the embedded NCs is in memory devices. To check the charge trapping properties of the embedded NCs, different electrical

• characterization techniques could be applied. The most common is the capacitance-voltage (C–V) technique that gives information about the memory window. Moreover, C–V gives valuable information as far as interface-defects and oxide defects are concerned. There are numerous studies on the charge-trapping properties

Review of nanostructured devices for thermoelectric applications

• Giovanni Pennelli

Beilstein J. Nanotechnol. 2014, 5, 1268–1284, doi:10.3762/bjnano.5.141