CuInSe₂ quantum dots grown by molecular beam epitaxy on amorphous SiO₂ surfaces

• Henrique Limborço,
• Pedro M.P. Salomé,
• Rodrigo Ribeiro-Andrade,
• Jennifer P. Teixeira,
• Nicoleta Nicoara,
• Kamal Abderrafi,
• Joaquim P. Leitão,
• Juan C. Gonzalez and
• Sascha Sadewasser

Beilstein J. Nanotechnol. 2019, 10, 1103–1111, doi:10.3762/bjnano.10.110

• preparation The samples presented in this work were grown in a molecular beam epitaxy system (Omicron EVO 50) by evaporating high-purity solid precursors. Nanodots were grown on Si(100) with an approximately 1.6 nm thick layer of native SiO2. The substrates were outgassed at 600 °C for 10 min before the

Direct observation of the CVD growth of monolayer MoS₂ using in situ optical spectroscopy

• Claudia Beatriz López-Posadas,
• Yaxu Wei,
• Wanfu Shen,
• Daniel Kahr,
• Michael Hohage and
• Lidong Sun

Beilstein J. Nanotechnol. 2019, 10, 557–564, doi:10.3762/bjnano.10.57

• synthesizing large-area 2D TMDCs have been reported, including mechanical exfoliation, sulphurization of metal thin films, mass transport, molecular beam epitaxy (MBE) and chemical vapor deposition (CVD) [6][7]. In particular, CVD is considered to be an attractive and very promising approach for large-scale

• the optical properties of 2D TMDCs [2][20] and, most recently, also to monitor the molecular beam epitaxy of monolayer MoSe2 on sapphire substrates [27]. In the current work, we have applied an analogous technology, namely, differential transmittance spectroscopy (DTS), to realize the in situ real

• is negligible, for the van der Waals epitaxy of MoS2 on the transparent sapphire substrate, the DT spectrum can thus be generally associated with the absorption of the adlayer. Consequently, the growth can be monitored in situ and in real time, and the detailed information associated with the

Interaction of Te and Se interlayers with Ag or Au nanofilms in sandwich structures

• Arkadiusz Ciesielski,
• Lukasz Skowronski,
• Marek Trzcinski,
• Ewa Górecka,
• Wojciech Pacuski and
• Tomasz Szoplik

Beilstein J. Nanotechnol. 2019, 10, 238–246, doi:10.3762/bjnano.10.22

• chamber molecular beam epitaxy (MBE) system delivered by SVT Associates. The substrates were kept at room temperature. The background pressure was below 5 × 10−10 Torr. The purity of sublimated ingots for both Te and Se was 7N. To avoid cross-contamination during the deposition of Te or Se only one

Variation of the photoluminescence spectrum of InAs/GaAs heterostructures grown by ion-beam deposition

• Alexander S. Pashchenko,
• Leonid S. Lunin,
• Eleonora M. Danilina and
• Sergei N. Chebotarev

Beilstein J. Nanotechnol. 2018, 9, 2794–2801, doi:10.3762/bjnano.9.261

• (λ = 0.154 nm). A Renishaw InVia Raman spectrometer was used for Raman investigations. Results and Discussion Photoluminescence properties of InAs/GaAs heterointerfaces The photoluminescence properties of vertically stacked QD arrays grown by using molecular beam epitaxy (MBE) are well studied in [24

• QD growth process by MBE [17][18][20] and metal-organic vapor-phase epitaxy (MOVPE) [32][33] reduces the In adatom diffusion length and prevents the coalescence of InAs QDs. Then, the QD array density increases. Others argue that the usage of Bi during MOVPE and MBE of InAs QDs [57][58] enhances In

Oriented zinc oxide nanorods: A novel saturable absorber for lasers in the near-infrared

• Pavel Loiko,
• Tanujjal Bora,
• Josep Maria Serres,
• Haohai Yu,
• Magdalena Aguiló,
• Francesc Díaz,
• Uwe Griebner,
• Valentin Petrov,
• Xavier Mateos and
• Joydeep Dutta

Beilstein J. Nanotechnol. 2018, 9, 2730–2740, doi:10.3762/bjnano.9.255

• epitaxy, metal-organic chemical vapor deposition, pulsed laser deposition), or by wet-chemical processes (e.g., the hydrothermal method, electrochemical deposition) [4]. The hydrothermal growth of ZnO NRs is a relatively simple, versatile and low temperature process [5]. ZnO NRs are used in gas sensors

Silicene, germanene and other group IV 2D materials

• Patrick Vogt

Beilstein J. Nanotechnol. 2018, 9, 2665–2667, doi:10.3762/bjnano.9.248

• beam epitaxy (MBE) [1][2] and at around the same time on zirconium diboride thin films grown on Si(111) substrates by Si segregation through the film [3]. The synthesis of silicene further launched an intensive search for other 2D elemental materials synthesized under ultrahigh vacuum by MBE-like

High-temperature magnetism and microstructure of a semiconducting ferromagnetic (GaSb)_1−x(MnSb)_x alloy

• Leonid N. Oveshnikov,
• Elena I. Nekhaeva,
• Alexey V. Kochura,
• Alexander B. Davydov,
• Mikhail A. Shakhov,
• Sergey F. Marenkin,
• Oleg A. Novodvorskii,
• Alexander P. Kuzmenko,
• Alexander L. Vasiliev,
• Boris A. Aronzon and
• Erkki Lahderanta

Beilstein J. Nanotechnol. 2018, 9, 2457–2465, doi:10.3762/bjnano.9.230

• of conducting holes [1][3]. To reach high values of the Curie temperature, Tc, materials with high Mn concentration are required, which can be achieved by using non-equilibrium growth methods, such as low-temperature molecular-beam epitaxy. Thus, the solubility limit of Mn in Ga1−xMnxAs can be

Metal–dielectric hybrid nanoantennas for efficient frequency conversion at the anapole mode

• Valerio F. Gili,
• Lavinia Ghirardini,
• Davide Rocco,
• Giuseppe Marino,
• Ivan Favero,
• Iännis Roland,
• Giovanni Pellegrini,
• Lamberto Duò,
• Marco Finazzi,
• Luca Carletti,
• Andrea Locatelli,
• Aristide Lemaître,
• Dragomir Neshev,
• Costantino De Angelis,
• Giuseppe Leo and
• Michele Celebrano

Beilstein J. Nanotechnol. 2018, 9, 2306–2314, doi:10.3762/bjnano.9.215

• The samples are grown by molecular beam epitaxy from a (100) non-intentionally doped GaAs substrate. At the end of the process, 400 nm of Al0.18Ga0.82As rest on a 1 μm Al0.98Ga0.02As sacrificial layer, which will be selectively oxidized at a later stage to achieve a low-index AlOx substrate. 3 nm of

Combined pulsed laser deposition and non-contact atomic force microscopy system for studies of insulator metal oxide thin films

• Daiki Katsube,
• Hayato Yamashita,
• Satoshi Abo and
• Masayuki Abe

Beilstein J. Nanotechnol. 2018, 9, 686–692, doi:10.3762/bjnano.9.63

• resolution in recent studies [35][37]. Difficulties with this method are a long preparation time and a low reproducibility. Recently, connecting an STM with a pulsed laser deposition (PLD) system [13][27][28] or with molecular beam epitaxy [18] has increased the types of measurements possible. Such combined

Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy

• Alexey D. Bolshakov,
• Alexey M. Mozharov,
• Georgiy A. Sapunov,
• Igor V. Shtrom,
• Nickolay V. Sibirev,
• Vladimir V. Fedorov,
• Evgeniy V. Ubyivovk,
• Maria Tchernycheva,
• George E. Cirlin and
• Ivan S. Mukhin

Beilstein J. Nanotechnol. 2018, 9, 146–154, doi:10.3762/bjnano.9.17

• thin AlN layer grown by means of plasma-assisted molecular beam epitaxy. In the first part of our study we investigate the influence of the growth parameters on the geometrical properties of the GaN NW arrays. First, we find that the annealing procedure carried out prior to deposition of the AlN buffer

• concentration in the nanostructures exceeds 5∙1019 cm−3. Keywords: A3B5 on Si; epitaxy; GaN; MBE; nanowires; nanotubes; nanotube-like nanostructures; Si; Introduction Gallium nitride quasi-one-dimensional nanostructures such as nanowires (NWs) and nanotubes (NTs) synthesized by means of plasma-assisted

• molecular beam epitaxy are attracting a lot of interest due to their prospective use as basic elements for new generation optoelectronic devices [1][2]. The most important properties of these structures in terms of potential device applications are high crystal quality and efficient light emission [3][4

Substrate and Mg doping effects in GaAs nanowires

• Perumal Kannappan,
• Nabiha Ben Sedrine,
• Jennifer P. Teixeira,
• Maria R. Soares,
• Bruno P. Falcão,
• Maria R. Correia,
• Nestor Cifuentes,
• Emilson R. Viana,
• Marcus V. B. Moreira,
• Geraldo M. Ribeiro,
• Alfredo G. de Oliveira,
• Juan C. González and
• Joaquim P. Leitão

Beilstein J. Nanotechnol. 2017, 8, 2126–2138, doi:10.3762/bjnano.8.212

• grown by molecular beam epitaxy (MBE) on GaAs(111)B and Si(111) substrates. In this work, we address this topic and present further understanding on the fundamental aspects. As the Mg doping was increased, structural and optical investigations revealed: i) a lower influence of the polytypic nature of

• [23][24]. Be has been the main choice to produce p-type GaAs layers and nanowires grown by molecular beam epitaxy (MBE) [25][26][27][28]. However, severe drawbacks like segregation at high concentration, a large diffusion coefficient prohibiting abrupt doping profiles and high toxicity have motivated

Bi-layer sandwich film for antibacterial catheters

• Gerhard Franz,
• Florian Schamberger,
• Hamideh Heidari Zare,
• Sara Felicitas Bröskamp and
• Dieter Jocham

Beilstein J. Nanotechnol. 2017, 8, 1982–2001, doi:10.3762/bjnano.8.199

• energy of the film-building species at substrate level had been reduced by collisions with the atoms of the inert gas [54]. The existence of these two competing processes in the volume and at the surface is a main issue in epitaxy, and the transition from simple chemical vapor deposition to advanced

Identifying the nature of surface chemical modification for directed self-assembly of block copolymers

• Laura Evangelio,
• Federico Gramazio,
• Matteo Lorenzoni,
• Michaela Gorgoi,
• Francisco Miguel Espinosa,
• Ricardo García,
• Francesc Pérez-Murano and
• Jordi Fraxedas

Beilstein J. Nanotechnol. 2017, 8, 1972–1981, doi:10.3762/bjnano.8.198

• Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Sor Juana Inés de la Cruz, 3, Cantoblanco, 28049 Madrid, Spain 10.3762/bjnano.8.198 Abstract In recent years, block copolymer lithography has emerged as a viable alternative technology for advanced lithography. In chemical-epitaxy-directed self

• period of the prepattern can be larger than the final period of the self-assembled pattern, and an improvement in both line-edge and line-width roughness. There are mainly two techniques to direct the self-assembly of BCPs: graphoepitaxy and chemical epitaxy. In graphoepitaxy, the BCPs are aligned by a

• topographical substrate pattern[7][8][9], whereas in chemical epitaxy the self-assembly is driven by the difference of surface free-energies between the domains of the copolymer and the chemical prepattern[2][10][11][12]. Currently, the industry is more focused on chemical epitaxy rather than on graphoepitaxy

(Metallo)porphyrins for potential materials science applications

• Lars Smykalla,
• Carola Mende,
• Michael Fronk,
• Pablo F. Siles,
• Michael Hietschold,
• Georgeta Salvan,
• Dietrich R. T. Zahn,
• Oliver G. Schmidt,
• Tobias Rüffer and
• Heinrich Lang

Beilstein J. Nanotechnol. 2017, 8, 1786–1800, doi:10.3762/bjnano.8.180

• this structure. Pair-wise hydrogen bonding is marked with red rectangles. The reconstruction of Au(111) is not included in the model of the epitaxy. (d) Molecules which are rotated by 90° in the subsequently measured image (bottom) are marked by squares. A rotated molecule with one missing phenyl group

• . H2THPP molecules are slightly displaced in a zigzag manner (U = +1.6V). (e) Model of epitaxy of the molecules in chains on Ag(110). Carbon atoms in the pyrrole rings bent away from the surface colored in yellow, Ag atom in first layer in bright blue, in second layer dark blue. Reproduced with permission

Adsorption characteristics of Er₃N@C₈₀on W(110) and Au(111) studied via scanning tunneling microscopy and spectroscopy

• Sebastian Schimmel,
• Zhixiang Sun,
• Danny Baumann,
• Denis Krylov,
• Nataliya Samoylova,
• Alexey Popov,
• Bernd Büchner and
• Christian Hess

Beilstein J. Nanotechnol. 2017, 8, 1127–1134, doi:10.3762/bjnano.8.114

• achieve the reproducible preparation of sub-monolayer Er3N@C80-coverage on substrates with the demanded cleanliness for systematically STM/STS investigations, the molecules were deposited via organic molecular beam epitaxy under ultra-high vacuum (UHV) conditions (p < 10−9 mbar) and subsequently analyzed

The integration of graphene into microelectronic devices

• Guenther Ruhl,
• Sebastian Wittmann,
• Matthias Koenig and
• Daniel Neumaier

Beilstein J. Nanotechnol. 2017, 8, 1056–1064, doi:10.3762/bjnano.8.107

• , epitaxy on silicon carbide or chemical vapor deposition (CVD) on catalytic metals [5]. Besides meeting the requirements of film quality and cost, the scalability to 200 or 300 mm wafer sizes is crucial for being suitable for industrial production. Currently, the highest-quality graphene synthesis method

Near-field surface plasmon field enhancement induced by rippled surfaces

• Mario D’Acunto,
• Francesco Fuso,
• Ruggero Micheletto,
• Makoto Naruse,
• Francesco Tantussi and
• Maria Allegrini

Beilstein J. Nanotechnol. 2017, 8, 956–967, doi:10.3762/bjnano.8.97

• ) that we will use in the SIE picture. Here, we are using the notation that , where and are unit vectors along the x and y directions. Since many patterning techniques, including ballistic deposition processes (such as molecular beam epitaxy or IBS) or plasma etching, are characterized by dynamic

Triptycene-terminated thiolate and selenolate monolayers on Au(111)

• Jinxuan Liu,
• Martin Kind,
• Björn Schüpbach,
• Daniel Käfer,
• Stefanie Winkler,
• Wenhua Zhang,
• Andreas Terfort and
• Christof Wöll

Beilstein J. Nanotechnol. 2017, 8, 892–905, doi:10.3762/bjnano.8.91

• units is a factor to liquid phase epitaxy of SURMOFs [20]. The temperature has another crucial impact on the efficiency and the direction of MOF growth on surfaces [3][21]. The strength of the chalcogenate–gold bond represents an upper limit to the MOF deposition temperature. Thus, replacing thiolate by

• selenolate with its stronger bond to gold [7][22][23][24][25] might open an opportunity to increase the temperature range for liquid epitaxy of MOFs. The insertion of a methylene spacer group between the anchor group and aromatic moieties has been reported to improve the structural quality of, e.g

• liquid phase epitaxy experiments of SURMOFs on –COOH terminated triptycene-based SAMs [20] with a selenium anchor group instead of a sulfur anchor group to study the impact of a higher degree of order on the resulting MOF thin films and their crystallographic orientation. Deposition temperature has been

Obtaining and doping of InAs-QD/GaAs(001) nanostructures by ion beam sputtering

• Sergei N. Chebotarev,
• Alexander S. Pashchenko,
• Leonid S. Lunin,
• Elena N. Zhivotova,
• Georgy A. Erimeev and
• Marina L. Lunina

Beilstein J. Nanotechnol. 2017, 8, 12–20, doi:10.3762/bjnano.8.2

• epitaxy [8] and vapour phase epitaxy [9] are commonly used and well-understood techniques for obtaining such nanostructures. Besides the mentioned methods, classic growth methods such as liquid phase epitaxy [10], laser beam sputtering [11], electron beam sputtering [12] and ion beam sputtering [13] are

• is employed to form nanostructured patterns on semiconductor surfaces [19]. And second, this effect was applied to stimulate nucleation nanoislands by ion-assisted molecular beam epitaxy [20]. It allowed the reduction of size and size dispersion of QDs. Earlier, we studied some features of

Ferromagnetic behaviour of ZnO: the role of grain boundaries

• Boris B. Straumal,
• Svetlana G. Protasova,
• Andrei A. Mazilkin,
• Eberhard Goering,
• Gisela Schütz,
• Petr B. Straumal and
• Brigitte Baretzky

Beilstein J. Nanotechnol. 2016, 7, 1936–1947, doi:10.3762/bjnano.7.185

• deposition (PLD), or magnetron sputtering [5][6][7][8][9]. However, the first disappointments also appeared immediately. Namely, single crystals, ceramics sintered from coarse-grained powders and single-crystalline films deposited by molecular beam epitaxy (MBE) were never ferromagnetic. Other synthesis

Precise in situ etch depth control of multilayered III−V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment

• Ann-Kathrin Kleinschmidt,
• Lars Barzen,
• Johannes Strassner,
• Christoph Doering,
• Henning Fouckhardt,
• Wolfgang Bock,
• Michael Wahl and
• Michael Kopnarski

Beilstein J. Nanotechnol. 2016, 7, 1783–1793, doi:10.3762/bjnano.7.171

• an established powerful method to monitor the epitaxial growth of monocrystalline semiconductor layers in situ [6][7] – for instance for molecular beam epitaxy (MBE). The RAS technique employs reflectometric as well as interferometric information, based on the difference in optical surface

• photon energy, the term RAS spectrum will be used. Due to the rotation of the substrates during epitaxy the software of the epitaxy-RAS instrumentation typically ignores the sign of the RAS signal. The time evolution of the spectrum of this RAS signal is called a false-color plot or short color plot (see

• contribution have been grown with molecular beam epitaxy (MBE) in a R450 MBE system from DCA Instruments Oy, Turku, Finland. Base and working pressure of the system are (8–9) × 10−10 hPa and (1–2) × 10−10 hPa, respectively. For the experiments concerning the accuracy of the etch depth determination, described

Filled and empty states of Zn-TPP films deposited on Fe(001)-p(1×1)O

• Gianlorenzo Bussetti,
• Alberto Calloni,
• Rossella Yivlialin,
• Andrea Picone,
• Federico Bottegoni and
• Marco Finazzi

Beilstein J. Nanotechnol. 2016, 7, 1527–1531, doi:10.3762/bjnano.7.146

• elsewhere [19], coupled to a chamber devoted to organic molecular beam epitaxy (OMBE). The OMBE chamber was designed and built in collaboration with 5Pascal srl. (via Boccaccio 108, 20090 Trezzano sul Naviglio, Milano, Italy). The OMBE system is equipped with four Knudsen cells, whose crucibles are

Viability and proliferation of endothelial cells upon exposure to GaN nanoparticles

• Tudor Braniste,
• Ion Tiginyanu,
• Tibor Horvath,
• Simion Raevschi,
• Serghei Cebotari,
• Marco Lux,
• Axel Haverich and
• Andres Hilfiker

Beilstein J. Nanotechnol. 2016, 7, 1330–1337, doi:10.3762/bjnano.7.124

• nanoparticles were synthesized on a sacrificial layer of zinc oxide (ZnO) nanoparticles using hydride vapor phase epitaxy. The uptake of GaN nanoparticles by porcine endothelial cells was strongly dependent upon whether they were fixed to the substrate surface or free floating in the medium. The endothelial

• epitaxy (HVPE) in two stages, as previously described [29]. Metallic gallium, ammonia (NH3) gas, hydrogen chloride (HCl) gas, and hydrogen (H2) were used as source materials and carrier gases. In the source zone, GaCl was formed as a result of chemical reactions between gaseous HCl and liquid Ga. GaCl and

Microscopic characterization of Fe nanoparticles formed on SrTiO₃(001) and SrTiO₃(110) surfaces

• Miyoko Tanaka

Beilstein J. Nanotechnol. 2016, 7, 817–824, doi:10.3762/bjnano.7.73

• a rectangle-on-rectangle relationship for fcc Ni on STO(110) surfaces, in which case the relation is (110)STO (110)Ni and [001]STO [001]Ni [25]. This epitaxy is more intuitive since the configuration is a tilted version of the well-known cube-on-cube relationship [47], and rectangular atomic

• former epitaxy exhibit the shape of a truncated pyramid while those with the latter epitaxy exhibit a hexagonal shape. Profile-view TEM observation revealed their height-to-length ratios, which in turn give the approximate value of the adhesion energy of each shape. The preference of each substrate for

Orientation of FePt nanoparticles on top of a-SiO₂/Si(001), MgO(001) and sapphire(0001): effect of thermal treatments and influence of substrate and particle size

• Martin Schilling,
• Paul Ziemann,
• Zaoli Zhang,
• Johannes Biskupek,
• Ute Kaiser and
• Ulf Wiedwald

Beilstein J. Nanotechnol. 2016, 7, 591–604, doi:10.3762/bjnano.7.52

• , 89069 Ulm, Germany Erich Schmid Institute of Materials Science, Jahnstrasse 12, 8700 Leoben, Austria Faculty of Physics and Center for Nanointegration Duisburg-Essen (CENIDE), University of Duisburg-Essen, 47057 Duisburg, Germany 10.3762/bjnano.7.52 Abstract Texture formation and epitaxy of thin metal

• pulsed laser deposition (PLD), served as reference samples. The structural properties were probed in situ, particularly texture formation and epitaxy of the specimens by reflection high-energy electron diffraction (RHEED) and, in case of 3 nm nanoparticles, additionally by high-resolution transmission

• transmission electron microscopy (HRTEM); nanoparticles; reflection high-energy electron diffraction (RHEED); solid-phase epitaxy; texture; Introduction Due to their attractive catalytic properties for oxygen reduction reactions (ORR) [1][2] as well as their high magnetocrystalline anisotropy energy density